©2000 Fairchild Semiconductor International Rev. A, February 2000
TIP120/121/122
NPN Epitaxial Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse T est : PW≤300µs, Duty cycle ≤2%
Symbol Parameter Value Units
VCBO Collector-Base Voltage : TIP120
: TIP12 1
: TIP12 2
60
80
100
V
V
V
VCEO Collector-Emitter V olt age : TIP120
: TIP12 1
: TIP12 2
60
80
100
V
V
V
VEBO Emitter-Base Volt age 5 V
IC Collector Current (DC) 5 A
ICP Collector Current (Pulse) 8 A
IB Base Current (DC) 120 mA
PC Collector Dissipation (Ta=25°C) 2 W
PC Collector Dissipation (TC=25°C) 65 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Param e ter Test Condition Min. Max. Un its
VCEO(sus) Collector-Emitter Sustaining Voltage
: TIP120
: TIP121
: TIP122
IC = 100mA, IB = 0 60
80
100
V
V
V
ICEO Collector Cut-off Current : TIP120
: TIP121
: TIP122
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VCE = 50V, IB = 0
0.5
0.5
0.5
mA
mA
mA
ICBO Collector Cut-of f Current : TIP120
: TIP121
: TIP122
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
0.2
0.2
0.2
mA
mA
mA
IEBO Emitter Cut-off Current VBE = 5V, IC = 0 2 mA
hFE * DC Current Gain VCE = 3V,IC = 0.5A
VCE = 3V, IC = 3A 1000
1000
VCE(sat) * Collector-Emitter Saturation Volt age IC = 3A, IB = 12mA
IC = 5A, IB = 20mA 2.0
4.0 V
V
VBE(on) * Base-Emitter ON Voltage VCE = 3V, IC = 3A 2.5 V
Cob Output Capacitance VCB = 10V, IE = 0, f = 0.1MHz 200 pF
TIP120/121/122
Medium Power Linear Switching Applications
• Complementary to TIP125/126/127
Equivalent Circuit
B
E
C
R1 R2
R18kΩ≅
R20.12kΩ≅
1.Base 2.Collector 3.Emitter
1TO-220
©2000 Fairchild Semiconductor International
TIP120/121/122
Rev. A, February 2000
Typical character istics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3 . Output and In put Capacitance
vs. Reverse Voltage Figure 4. Safe Operating Area
Figure 5. Power Derating
0.1 1 10
100
1000
10000
VCE = 4V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10
0.5
1.0
1.5
2.0
2.5
3.0
3.5 IC = 250IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.1 1 10 100
10
100
1000
Cob
f=0.1MHz
VCB[V], COLLECTOR-BASE VOLTAGE
VEB[V], EMITTER-BASE VOLTAGE
Cob[pF] Cib[pF ], CAPACITANCE
Cib
1 10 100
0.01
0.1
1
10
TIP121
TIP122
TIP120
DC
5ms
100us
500us
1ms
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
80
PC[W], POWER DIS SIPATION
TC[oC], CASE TEMPERATURE
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
TIP120/121/122
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. E
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Design This datasheet contains the design specifications for
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