1. Product profile
1.1 General description
500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to
1.4 GHz range.
1.2 Features and benefits
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1.2 GHz to 1.4 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency
range
BLL6H1214-500;
BLL6H1214LS-500
LDMOS L-band radar power transistor
Rev. 4 — 1 September 2015 Product data sheet
Table 1. Test information
Typical RF performance at Tcase =25
C; tp = 300
s;
= 10 %; IDq = 150 mA; in a class-AB
production test circuit.
Test signal f VDS PLGpDtrtf
(GHz) (V) (W) (dB) (%) (ns) (ns)
pulsed RF 1.2 to 1.4 50 500 17 50 20 6
BLL6H1214-500_1214LS-500#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 2 of 21
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLL6H1214-500 (SOT539A)
1drain1
2drain2
3gate1
4gate2
5source [1]
BLL6H1214LS-500 (SOT539B)
1drain1
2drain2
3gate1
4gate2
5source [1]
5
12
43
4
35
1
2sym117
5
12
43
4
35
1
2sym117
Table 3. Ordering information
Type number Package
Name Description Version
BLL6H1214-500 - flanged balanced ceramic package; 2 mounting holes;
4 leads
SOT539A
BLL6H1214LS-500 - earless flanged balanced ceramic package; 4 leads SOT539B
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 100 V
VGS gate-source voltage 0.5 +13 V
Tstg storage temperature 65 +150 C
Tjjunction temperature - 200 C
BLL6H1214-500_1214LS-500#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 3 of 21
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
5. Thermal characteristics
6. Characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
BLL6H1214-500
Zth(j-c) transient thermal impedance from
junction to case
Tcase =85C; PL=500W
tp = 100 s; = 10 % 0.07 K/W
tp = 200 s; = 10 % 0.08 K/W
tp = 300 s; =10% 0.1 K/W
tp = 100 s; =20% 0.1 K/W
BLL6H1214LS-500
Zth(j-c) transient thermal impedance from
junction to case
Tcase =85C; PL=500W
tp = 100 s; = 10 % 0.046 K/W
tp = 200 s; = 10 % 0.059 K/W
tp = 300 s; = 10 % 0.069 K/W
tp = 100 s; = 20 % 0.064 K/W
Table 6. DC characteristics
Tj = 25
C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID= 2.7 mA 100 - - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID= 270 mA 1.3 1.8 2.2 V
IDSS drain leakage current VGS = 0 V; VDS =50V--1.4A
IDSX drain cut-off current VGS =V
GS(th) + 3.75 V;
VDS =10V
32 42 - A
IGSS gate leakage current VGS =11V; V
DS =0V--140nA
gfs forward transconductance VDS = 10 V; ID= 270 mA 1.7 3 - S
RDS(on) drain-source on-state resistance VGS =V
GS(th) + 3.75 V;
ID=9.5A
-100164m
Table 7. RF characteristics
Test signal: pulsed RF; tp = 300
s;
= 10 %; RF performance at VDS =50V; I
Dq =150mA;
Tcase =25
C; unless otherwise specified, in a class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
PLoutput power 500 - - W
VDS drain-source voltage PL=500W - - 50 V
Gppower gain PL= 500 W 15 17 - dB
RLin input return loss PL=500W - 10 - dB
PL(1dB) output power at 1 dB gain compression - 600 - W
Ddrain efficiency PL=500W 45 50 - %
BLL6H1214-500_1214LS-500#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 4 of 21
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
7. Test information
7.1 Ruggedness in class-AB operation
The BLL6H1214-500 and BLL6H1214LS-500 are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: VDS =50V; I
Dq = 150 mA; PL=500W; t
p = 300 s; = 10 %.
7.2 Impedance information
7.3 Test circuit
Pdroop(pulse) pulse droop power PL= 500 W - 0 0.3 dB
trrise time PL= 500 W - 20 50 ns
tffall time PL=500W - 6 50 ns
Table 7. RF characteristics …continued
Test signal: pulsed RF; tp = 300
s;
= 10 %; RF performance at VDS =50V; I
Dq =150mA;
Tcase =25
C; unless otherwise specified, in a class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
Table 8. Typical impedance
Typical values per section unless otherwise specified.
f ZSZL
(GHz) () ()
1.2 1.268 j2.623 2.987 j1.664
1.3 2.193 j2.457 2.162 j1.326
1.4 2.359 j2.052 1.604 j1.887
Fig 1. Definition of transistor impedance
001aaf059
drain
Z
L
Z
S
gate
Table 9. List of components
For test circuit see Figure 2.
Component Description Value Remarks
C1 multilayer ceramic chip capacitor 22 F, 35 V
C2 multilayer ceramic chip capacitor 51 pF [1]
C3, C4 multilayer ceramic chip capacitor 100 pF [1]
C5, C11, C12 multilayer ceramic chip capacitor 1 nf [2]
C6 multilayer ceramic chip capacitor 47 pF [1]
C7, C8, C10 multilayer ceramic chip capacitor 51 pF [3]
BLL6H1214-500_1214LS-500#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 5 of 21
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
[3] American Technical Ceramics type 800B or capacitor of same quality.
C9 multilayer ceramic chip capacitor 100 pF [3]
C13 electrolytic capacitor 10 F, 63 V
R1 SMD resistor 56 0603
R2 metal film resistor 51
Table 9. List of components …continued
For test circuit see Figure 2.
Component Description Value Remarks
Printed-Circuit Board (PCB): Duroid 6006; r = 6.15 F/m; thickness = 0.64 mm; thickness copper plating = 35 m.
See Table 9 for a list of components.
Fig 2. Component layout for class-AB production test circuit
001aaj490
C1 C2
R1
C3 C4 C5
R2
C6
C8 C9
C10
C11
C12
C13
C7
BLL6H1214-500_1214LS-500#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 6 of 21
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
7.4 RF performance graphs
7.4.1 Performance curves measured with = 10 %, tp=300s and Th=25C
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 3. Output power as a function of input power;
typical values
Fig 4. Power gain as a function of output power;
typical values
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
VDS = 50 V; PL = 500 W; IDq = 150 mA.
Fig 5. Drain efficiency as a function of output power;
typical values
Fig 6. Power gain and drain efficiency as function of
frequency; typical values
aaa-005403
0 4 8 12 16 20
0
200
400
600
800
Pi (W)
PL
PL
(W)(W)(W)
(1)(1)(1) (2)
(2)(2) (3)(3)(3)
aaa-005404
0 100 200 300 400 500 600 700
0
4
8
12
16
20
PL (W)
Gp
Gp
(dB)(dB)(dB)
(1)(1)(1)
(2)(2)(2)
(3)(3)(3)
aaa-005405
0 100 200 300 400 500 600 700
0
15
30
45
60
PL (W)
ηD
ηD
(%)(%)(%)
(1)(1)(1)
(2)
(2)(2)
(3)
(3)(3)
aaa-005406
1150 1200 1250 1300 1350 1400 1450
10 10
12 20
14 30
16 40
18 50
20 60
f (MHz)
Gp
Gp
(dB)(dB)(dB)
ηD
ηD
(%)(%)(%)
Gp
Gp
ηD
ηD
BLL6H1214-500_1214LS-500#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 7 of 21
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
7.4.2 Performance curves measured with = 10 %, tp=300s and Th=65C
VDS = 50 V; PL = 500 W; IDq = 150 mA.
Fig 7. Input return loss as a function of frequency; typical value
aaa-005407
1150 1200 1250 1300 1350 1400 1450
0
5
10
15
20
25
f (MHz)
RL
RLinin
RLin
(dB)(dB)(dB)
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 8. Output power as a function of input power;
typical values
Fig 9. Power gain as a function of output power;
typical values
aaa-005408
0 5 10 15 20 25
0
200
400
600
800
Pi (W)
PL
PL
(W)(W)(W)
(1)(1)(1) (2)
(2)(2) (3)
(3)(3)
aaa-005409
0 100 200 300 400 500 600 700
10
12.5
15
17.5
20
PL (W)
Gp
Gp
(dB)(dB)(dB)
(1)(1)(1)
(2)(2)(2)
(3)(3)(3)
BLL6H1214-500_1214LS-500#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 8 of 21
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
7.4.3 Performance curves measured with = 10 %, tp=300s and f = 1300 MHz
VDS = 50 V; IDq = 100 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
VDS = 50 V; PL = 500 W; IDq = 100 mA.
Fig 10. Drain efficiency as a function of output power;
typical values
Fig 11. Power gain and drain efficiency as function of
frequency; typical values
aaa-005410
0 100 200 300 400 500 600 700
0
10
20
30
40
50
60
PL (W)
ηD
ηD
(%)(%)(%)
(1)(1)(1)
(2)
(2)(2)
(3)
(3)(3)
aaa-005411
1150 1200 1250 1300 1350 1400 1450
10 10
12 20
14 30
16 40
18 50
20 60
f (MHz)
Gp
Gp
(dB)(dB)(dB)
ηD
ηD
(%)(%)(%)
Gp
Gp
ηD
ηD
VDS = 50 V; IDq = 150 mA.
(1) Th = 40 C
(2) Th = 25 C
(3) Th = 65C
VDS = 50 V;IDq = 150 mA.
(1) Th = 40 C
(2) Th = 25 C
(3) Th = 65C
Fig 12. Output power as a function of input power;
typical values
Fig 13. Power gain as a function of output power;
typical values
Pi (W)
0252010 155
001aal688
700
PL
(W)
500
300
100
0
200
400
600
(1)
(2)
(3)
PL (W) 700500100 6004002000 300
001aal689
14
12
18
20
Gp
(dB)
10
16 (1)
(2)
(3)
BLL6H1214-500_1214LS-500#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 9 of 21
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
7.4.4 Performance curves measured with = 20 %, tp=500s and Th=25C
VDS = 50 V;IDq = 150 mA.
(1) Th = 40 C
(2) Th = 25 C
(3) Th = 65C
Fig 14. Drain efficiency as a function of output power; typical values
PL (W)
0 200 400 600 700500300100
001aal690
20
40
60
ηD
(%)
0
(1)
(2)
(3)
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 15. Output power as a function of input power;
typical values
Fig 16. Power gain as a function of output power;
typical values
Pi (W)
0252010 155
001aal691
700
PL
(W)
500
300
100
0
200
400
600
(1)
(2)
(3)
PL (W) 700500100 6004002000 300
001aal692
8
4
16
20
Gp
(dB)
0
12
(1)
(2)
(3)
BLL6H1214-500_1214LS-500#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 10 of 21
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
7.4.5 Performance curves measured with = 20 %, tp=500s and Th=65C
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
VDS = 50 V; IDq = 150 mA.
Fig 17. Drain efficiency as a function of output power;
typical values
Fig 18. Power gain and drain efficiency as function of
frequency; typical values
PL (W)
0 200 400 600 700500300100
001aal693
20
40
60
ηD
(%)
0
(1)
(2)
(3)
001aal694
f (GHz)
1.15 1.451.351.25
14
16
12
18
20
Gp
(dB)
10
25
35
15
45
55
ηD
(%)
5
ηD
Gp
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 19. Output power as a function of input power;
typical values
Fig 20. Power gain as a function of output power;
typical values
Pi (W)
0252010 155
001aal695
700
PL
(W)
500
300
100
0
200
400
600
(1)
(2)
(3)
PL (W) 700500100 6004002000 300
001aal696
14
12
18
20
Gp
(dB)
10
16 (1)
(2)
(3)
BLL6H1214-500_1214LS-500#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 11 of 21
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
7.4.6 Performance curves measured with = 20 %, tp=500s and f = 1300 MHz
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
VDS = 50 V; IDq = 150 mA.
Fig 21. Drain efficiency as a function of output power;
typical values
Fig 22. Power gain and drain efficiency as function of
frequency; typical values
PL (W)
0 200 400 600 700500300100
001aal697
20
40
60
ηD
(%)
0
(1)
(2)
(3)
001aal698
f (GHz)
1.15 1.451.351.25
14
16
12
18
20
Gp
(dB)
10
25
35
15
45
55
ηD
(%)
5
ηD
Gp
VDS = 50 V; IDq = 150 mA.
(1) Th = 40 C
(2) Th = 25 C
(3) Th = 65C
VDS = 50 V; IDq = 150 mA.
(1) Th = 40 C
(2) Th = 25 C
(3) Th = 65C
Fig 23. Output power as a function of input power;
typical values
Fig 24. Power gain as a function of output power;
typical values
Pi (W)
0252010 155
001aal699
700
PL
(W)
500
300
100
0
200
400
600
(1)
(2)
(3)
PL (W) 700500100 6004002000 300
001aal700
8
4
16
20
Gp
(dB)
0
12
(1)
(2)
(3)
BLL6H1214-500_1214LS-500#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 12 of 21
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
7.4.7 Performance curves measured with = 10 %, tp= 1 ms and Th=25C
VDS = 50 V; IDq = 150 mA.
(1) Th = 40 C
(2) Th = 25 C
(3) Th = 65C
Fig 25. Drain efficiency as a function of output power; typical values
PL (W)
0 200 400 600 700500300100
001aal701
20
40
60
ηD
(%)
0
(1)
(2)
(3)
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 26. Output power as a function of input power;
typical values
Fig 27. Power gain as a function of output power;
typical values
Pi (W)
0252010 155
001aal702
700
PL
(W)
500
300
100
0
200
400
600
(1)
(2)
(3)
PL (W) 700500100 6004002000 300
001aal703
8
4
16
20
Gp
(dB)
0
12
(1)
(2)
(3)
BLL6H1214-500_1214LS-500#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 13 of 21
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
7.4.8 Performance curves measured with = 10 %, tp= 1 ms and Th=65C
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
VDS = 50 V; IDq = 150 mA.
Fig 28. Drain efficiency as a function of output power;
typical values
Fig 29. Power gain and drain efficiency as function of
frequency; typical values
PL (W)
0 200 400 600 700500300100
001aal704
20
40
60
ηD
(%)
0
(1)
(2)
(3)
001aal705
f (GHz)
1.15 1.451.351.25
14
16
12
18
20
Gp
(dB)
10
25
35
15
45
55
ηD
(%)
5
ηD
Gp
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 30. Output power as a function of input power;
typical values
Fig 31. Power gain as a function of output power;
typical values
Pi (W)
0252010 155
001aal706
700
PL
(W)
500
300
100
0
200
400
600
(1)
(2)
(3)
PL (W) 700500100 6004002000 300
001aal707
8
4
16
20
Gp
(dB)
0
12
(1)
(2)
(3)
BLL6H1214-500_1214LS-500#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 14 of 21
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
7.4.9 Performance curves measured with = 10 %, tp= 1 ms and f = 1300 MHz
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
VDS = 50 V; IDq = 150 mA.
Fig 32. Drain efficiency as a function of output power;
typical values
Fig 33. Power gain and drain efficiency as function of
frequency; typical values
PL (W)
0 200 400 600 700500300100
001aal708
20
40
60
ηD
(%)
0
(1)
(2)
(3)
001aal709
f (GHz)
1.15 1.451.351.25
14
16
12
18
20
Gp
(dB)
10
25
35
15
45
55
ηD
(%)
5
ηD
Gp
VDS = 50 V; IDq = 150 mA.
(1) Th = 40 C
(2) Th = 25 C
(3) Th = 65C
VDS = 50 V; IDq = 150 mA.
(1) Th = 40 C
(2) Th = 25 C
(3) Th = 65C
Fig 34. Output power as a function of input power;
typical values
Fig 35. Power gain as a function of output power;
typical values
Pi (W)
0252010 155
001aal710
700
PL
(W)
500
300
100
0
200
400
600
(1)
(2)
(3)
PL (W) 700500100 6004002000 300
001aal711
8
4
16
20
Gp
(dB)
0
12
(1)
(2)
(3)
BLL6H1214-500_1214LS-500#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 15 of 21
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
VDS = 50 V; IDq = 150 mA.
(1) Th = 40 C
(2) Th = 25 C
(3) Th = 65C
Fig 36. Drain efficiency as a function of output power; typical values
PL (W)
0 200 400 600 700500300100
001aal712
20
40
60
ηD
(%)
0
(1)
(2)
(3)
BLL6H1214-500_1214LS-500#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 16 of 21
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
8. Package outline
Fig 37. Package outline SOT539A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT539A 12-05-02
10-02-02
0 5 10 mm
scale
p
A
F
b
e
D
U2
L
H
Q
c
5
12
43
D1
E
A
w1AB
M M M
q
U1
H1
C
B
M M
w2C
E1
M
w3
UNIT A
mm
Db
11.81
11.56
0.18
0.10
31.55
30.94 13.72 9.53
9.27
17.12
16.10
10.29
10.03
4.7
4.2
ce U2
0.250.25 0.51
w3
35.56
qw
2
w1
F
1.75
1.50
U1
41.28
41.02
H1
25.53
25.27
p
3.30
3.05
Q
2.26
2.01
EE
1
9.50
9.30
inches 0.465
0.455
0.007
0.004
1.242
1.218
D1
31.52
30.96
1.241
1.219 0.540 0.375
0.365
0.674
0.634
0.405
0.395
0.185
0.165 0.0100.010 0.0201.400
0.069
0.059
1.625
1.615
1.005
0.995
0.130
0.120
0.089
0.079
0.374
0.366
H
3.48
2.97
0.137
0.117
L
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
BLL6H1214-500_1214LS-500#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 17 of 21
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
Fig 38. Package outline SOT539B
References
Outline
version
European
projection Issue date
IEC JEDEC JEITA
SOT539B
sot539b_po
12-05-02
13-05-24
Unit(1)
mm
max
nom
min
4.7
4.2
11.81
11.56
31.55
30.94
31.52
30.96
9.5
9.3
9.53
9.27
1.75
1.50
17.12
16.10
3.48
2.97
10.29
10.03
0.25
A
Dimensions
Earless flanged balanced ceramic package; 4 leads SOT539B
bc
0.18
0.10
DD
1EE
1e
13.72
FHH
1
25.53
25.27
LQ
2.26
2.01
U1
32.39
32.13
U2w2
0.25
inches
max
nom
min
0.185
0.165
0.465
0.455
1.242
1.218
1.241
1.219
0.374
0.366
0.375
0.365
0.069
0.059
0.674
0.634
0.137
0.117
0.405
0.395
0.01
0.007
0.004
0.54
1.005
0.995
0.089
0.079
1.275
1.265
0.01
w3
0 5 10 mm
scale
c
E
Q
E1
e
H
L
b
H1
U1
U2
Dw2
w3
1 2
3 4
D
D
A
F
D1
5
Note
1. millimeter dimensions are derived from the original inch dimensions.
BLL6H1214-500_1214LS-500#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 18 of 21
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
9. Handling information
10. Abbreviations
11. Revision history
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 10. Abbreviations
Acronym Description
ESD ElectroStatic Discharge
L-band Long wave Band
LDMOS Laterally Diffused Metal-Oxide Semiconductor
SMD Surface Mounted Device
VSWR Voltage Standing-Wave Ratio
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLL6H1214-500_1214LS-500#4 20150901 Product data sheet BLL6H1214-500_121
4LS-500 v.3
Modifications: •The format of this document has been redesigned to comply with the new
identity guidelines of Ampleon.
•Legal texts have been adapted to the new company name where appropriate.
BLL6H1214-500_1214LS-500 v.3 20130805 Product data sheet - BLL6H1214-500 v.2
BLL6H1214-500 v.2 20100401 Product data sheet - BLL6H1214-500 v.1
BLL6H1214-500 v.1 20090120 Objective data sheet - -
BLL6H1214-500_1214LS-500#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 19 of 21
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’ aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
Ampleon product can reasonably be expected to result in personal injury,
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
BLL6H1214-500_1214LS-500#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 20 of 21
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own Any
reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
13. Contact information
For more information, please visit:
http://www.ampleon.com
For sales office addresses, please visit:
http://www.ampleon.com/sales
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
© Ampleon The Netherlands B.V. 2015. All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 1 September 2015
Document identifier: BLL6H1214-500_1214LS-500#4
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 4
7.1 Ruggedness in class-AB operation . . . . . . . . . 4
7.2 Impedance information . . . . . . . . . . . . . . . . . . . 4
7.3 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
7.4 RF performance graphs . . . . . . . . . . . . . . . . . . 6
7.4.1 Performance curves measured with
= 10 %, tp=300s and Th= 25 °C . . . . . . . . 6
7.4.2 Performance curves measured with
= 10 %, tp=300s and Th= 65 °C . . . . . . . . 7
7.4.3 Performance curves measured with
=10%, t
p=300s and f = 1300 MHz. . . . . . 8
7.4.4 Performance curves measured with
= 20 %, tp=500s and Th= 25 °C . . . . . . . . 9
7.4.5 Performance curves measured with
= 20 %, tp=500s and Th= 65 °C . . . . . . . 10
7.4.6 Performance curves measured with
= 20 %, tp=500s and f = 1300 MHz. . . . . 11
7.4.7 Performance curves measured with
= 10 %, tp= 1 ms and Th= 25 °C . . . . . . . . 12
7.4.8 Performance curves measured with
= 10 %, tp= 1 ms and Th= 65 °C . . . . . . . . 13
7.4.9 Performance curves measured with
= 10 %, tp= 1 ms and f = 1300 MHz . . . . . . 14
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16
9 Handling information. . . . . . . . . . . . . . . . . . . . 18
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 18
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 18
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 19
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 19
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 20
13 Contact information. . . . . . . . . . . . . . . . . . . . . 20
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
