5-1
Semiconductor
September 1998
RFM18N08, RFM18N10,
RFP18N08, RFP18N10
18A, 80V and 100V, 0.100 Ohm,
N-Channel Power MOSFETs
Features
• 18A, 80V and 100V
•r
DS(ON) = 0.100Ω
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir-
cuits.
Formerly developmental type TA17421.
Symbol
Packaging
JEDEC TO-204AA JEDEC TO-220AB
Ordering Information
PART NUMBER PACKAGE BRAND
RFM18N08 TO-204AA RFM18N08
RFM18N10 TO-204AA RFM18N10
RFP18N08 TO-220AB RFP18N08
RFP18N10 TO-220AB RFP18N10
NOTE: When ordering, use the entire part number .
D
G
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
SOURCE
DRAIN
GATE
DRAIN
(TAB)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998 File Number 1446.1
[ /Title
(RFM18
N08,
RFM18
N10,
RFP18N
08,
RFP18N
10)
/
Subject
(18A,
80V and
100V,
0.1 Ohm,
N-Chan-
nel
Power
MOS-
FETs)
/
Author
()
/
Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FETs,
TO-
204AA,
TO-
220AB)
/
Creator
()
/
DOCIN
FO pdf-
mark
5-2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFM18N08 RFM18N10 RFP18N08 RFP18N10 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . VDSS 80 100 80 100 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . VDGR 80 100 80 100 V
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 18
45 18
45 18
45 18
45 A
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 ±20 ±20 ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
0.8 100
0.8 75
0.6 75
0.6 W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . .TJ, TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . Tpkg 300
260 300
260 300
260 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause per manent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V
RFM18N08, RFP18N08 80 - - V
RFM18N10, RFP18N10 100 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA, (Figure 8) 2 - 4 V
Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 1 µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC- - 25 µA
Gate to Source Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±100 nA
Drain to Source On Resistance (Note 2) rDS(ON) ID = 18A, VGS = 10V, (Figures 6, 7) - - 0.100 Ω
Drain to Source On Voltage (Note 2) VDS(ON) ID = 18A, VGS = 10V - - 1.8 V
Turn-On Delay Time td(ON) VDD = 50V, ID≈ 9A, RG = 50Ω, VGS = 10V,
RL = 5.5Ω
(Figures 10, 11, 12)
-6090ns
Rise Time tr- 300 450 ns
Turn-Off Delay Time td(OFF) - 150 225 ns
Fall Time tf- 150 225 ns
Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz,
(Figure 9) - - 1700 pF
Output Capacitance COSS - - 750 pF
Reverse-Transfer Capacitance CRSS - - 300 pF
Thermal Resistance Junction to Case RθJC RFM18N08, RFM18N10 - - 1.25 oC/W
RFP18N08, RFP18N10 - - 1.67 oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) VSD ISD = 9A - - 1.4 V
Diode Reverse Recovery Time trr ISD = 4A, dISD/dt = 100A/µs - 150 - ns
NOTES:
2. Pulse test: width ≤ 300µs, duty cycle ≤2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
RFM18N08, RFM18N10, RFP18N08, RFP18N10
5-3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs
DRAIN CURRENT
0 50 100 150
0
TC, CASE TEMPERATURE (oC)
POWER DISSIPATION MULTIPLIER
0.2
0.4
0.6
0.8
1.0
1.2
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
ID, DRAIN CURRENT (A)
20
18
16
14
12
10
8
6
4
2
0
RFP18N08,
RFP18N10
RFM18N08,
RFM18N10
1 10 100 1000
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
10
1
0.1
ID, DRAIN CURRENT
TC = 25oC
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
OPERATION IN
THIS AREA MAY BE
LIMITED BY rDS(ON)
DC OPERATION
TJ = MAX RATED
01234567
35
30
25
20
15
10
5
0
VDS, DRAIN TO SOURCE (V)
ID, DRAIN CURRENT (A)
VG = 8V
8
VG = 7V
VG = 6V
VG = 5V
VG = 4V
VG = 10VVG = 20V
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
TC = 25oC
0 2341 5678910
VGS, GATE TO SOURCE VOLTAGE (V)
40
35
30
25
20
15
10
5
0
VDS = 10V
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
TC = 25oC
IDS(ON), DRAIN TO SOURCE CURRENT
125oC
125oC-40oC25oC
-40oC
01020303551525
ID, DRAIN CURRENT (A)
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
rDS(ON), DRAIN TO SOURCE
ON RESISTANCE (Ω)
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
TC = 25oC
125oC
25oC
-40oC
VGS = 10V
RFM18N08, RFM18N10, RFP18N08, RFP18N10
5-4
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE FIGURE 8. NORMALIZED GA TE THRESHOLD V OLTA GE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHING W A VEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
ID = 18A
VGS = 10V
-50 0 50 100 150 200
TJ, JUNCTION TEMPERATURE (oC)
2.0
1.5
1.0
0.5
0
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 80µs
-50 0 50 100 150 200
TJ, JUNCTION TEMPERATURE (oC)
1
0.8
0.6
1.2
1.4
NORMALIZED GATE
THRESHOLD VOLTAGE
VGS = VDS
ID = 250µA
0102030405060
VDS, DRAIN TO SOURCE VOLTAGE (V)
2400
2000
1600
1200
800
400
0
C, CAPACITANCE (pF)
CRSS
COSS
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD VDD = BVDSS
100
75
50
25
0
10
8
6
4
2
0
VGS, GATE TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.75BVDSS
0.25BVDSS
0.50BVDSS
DRAIN SOURCE VOLTAGE
GATE
SOURCE
VOLTAGE
VDD = BVDSS
RL = 5.56Ω
IG(REF) = 1mA
VGS = 10V
IG(REF)
IG(ACT)
20 IG(REF)
IG(ACT)
80
t, TIME (µs)
RFM18N08, RFM18N10, RFP18N08, RFP18N10
5-5
Test Circuits and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
FIGURE 13. GATE CHARGE TEST CIRCUIT FIGURE 14. GATE CHARGE WAVEFORMS
VGS
RL
RG
DUT
+
-VDD
tON
td(ON)
tr
90%
10%
VDS 90%
10%
tf
td(OFF)
tOFF
90%
50%
50%
10% PULSE WIDTH
VGS
0
0
0.3µF
12V
BATTERY 50kΩ
VDS
S
DUT
D
G
IG(REF)
0
(ISOLATED
VDS
0.2µF
CURRENT
REGULATOR
ID CURRENT
SAMPLING
IG CURRENT
SAMPLING
SUPPLY)
RESISTOR RESISTOR
SAME TYPE
AS DUT Qg(TOT)
Qgd
Qgs
VDS
0
VGS
VDD
IG(REF)
0
RFM18N08, RFM18N10, RFP18N08, RFP18N10
