DATA SHEET
The information in this document is subject to change without notice.
Document No. P11284EJ4V0DS00 (4th edition)
Date Published April 1998 NS CP(K)
Printed in Japan
PHOTOCOUPLER
PS2601,PS2602,PS2601L,PS2602L
HIGH ISOLATION VOLTAGE
6-PIN PHOTOCOUPLER
©
1988
The mark •
••
• shows major revised poi nts.
−NEPOCTM Series−
DESCRIPTION
The PS2601, PS2602, PS2601L, PS2602L are optically coupled isolators containing a GaAs light emitting diode
and an NPN silicon phototransistor in a plastic DIP (Dual In-line Package).
The PS2601L, PS2602L are lead bending type (Gull-wing) for surface mount.
FEATURES
• High Isolation voltage (BV = 5 000 Vr.m.s.)
• High collector to emitter voltage (VCEO = 80 V)
• High-speed switching (tr = 3
µ
s TYP., tf = 5
µ
s TYP.)
• High current transfer ratio (CTR = 300 % TYP.)
• UL approved: File No. E72422 (S)
• Ordering number of taping product: PS2601L-E3, E4, PS2602L-E3, E4
APPLICATIONS
• Power supply, SSR
• Telephone, FAX
• AC/DC line interface
• Electric home appliances
2
PS2601,PS2602,PS2601L,PS2602L
PACKAGE DIMENSIONS (in millimeters)
PS2601, PS2602
DIP type
PS2601L, PS2602L
Lead bending type
6.5
0 to 15˚
7.62
2.54
3.8 MAX.
0.65
4.55 MAX.
2.54 MAX.
2.8 MIN.
0.50±0.10
0.25
M
1.34
3.8 MAX.
2.54 MAX.
2.54
1.34±0.10
0.25 M
6.5
0.9±0.25
9.60±0.4
0.05 to 0.2
7.62
10.16 MAX. 10.16 MAX.
PIN CONNECTIONS (TOP VIEW)
1. Anode
2. Cathode
3. NC
4. Emitter
5. Collector
6. NC
132
654
PS2602, PS2602L
1. Anode
2. Cathode
3. NC
4. Emitter
5. Collector
6. Base
132
654
PS2601, PS2601L
3
PS2601,PS2602,PS2601L,PS2602L
ABSOLUTE MAXIMUM RATINGS (TA = 25 °
°°
°C, unless otherwise specified)
Parameter Symbol Ratings Unit
Diode Forward Current (DC) IF80 mA
Reverse Vol tage VR6.0 V
Power Dissipati on Derating
∆
PD/°C1.5mW/
°
C
Power Dissipati on PD150 mW
Peak Forward Current *1 IFP 1A
Transistor Collector to Emitter Voltage VCEO 80 V
Emitter to Collector Voltage VECO 7V
Collector Current IC50 mA
Power Dissipati on Derating
∆
PC/°C1.5mW/
°
C
Power Dissipati on PC150 mW
Isolat i on Voltage *2 BV 5 000 Vr.m. s.
Operating Am bi ent Tem perature TA−55 to +100 °C
Storage Temperat ure Tstg −55 to +150 °C
*1 PW = 100
µ
s, Duty Cycle = 1 %
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
4
PS2601,PS2602,PS2601L,PS2602L
ELECTRICAL CHARACTERISTICS (TA = 25 °
°°
°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VFIF = 10 mA 1.1 1.4 V
Reverse Current IRVR = 5 V 5.0
µ
A
Terminal Capaci tance CtV = 0 V, f = 1.0 MHz 30 pF
Transistor Collector to Emitter
Dark Current ICEO VCE = 80 V, I F = 0 m A 100 nA
DC Current Gain *1 hFE IC = 2 mA, VCE = 5 V 700
Coupled Current Transf er Ratio
(IC/IF) *2 CTR IF = 5 mA, VCE = 5 V 80 300 600 %
Collector Saturation
Voltage VCE (sat) IF = 10 mA, IC = 2 m A 0.3 V
Isolat i on Resistance RI-O VI-O = 1.0 kVDC 1011 Ω
Isolat i on Capacitance CI-O V = 0 V, f = 1.0 M Hz 0.6 pF
Rise Time *3 trVCC = 5 V, I C = 2 mA, RL = 100 Ω3
µ
s
Fall Time *3 tf5
*1 PS2601, PS2601L only
*2 CTR rank
K: 300 to 600 (%)
L: 200 to 400 (%)
M: 80 to 240 (%)
*3 Test circuit for switching time
Pulse input V
CC
V
OUT
R
L
= 100 Ω50 Ω
I
F
(PW = 100 s,
Duty cycle = 1/10)
µ
5
PS2601,PS2602,PS2601L,PS2602L
TYPICAL CHARACTERISTICS (TA = 25 °
°°
°C, unless otherwise specified)
FORWARD CURRENT vs.
FORWARD VOLTAGE
Forward Voltage V
F
(V)
Forward Current I
F
(mA)
100
10
1
0.1
0.01
0.6 0.8 1.0 1.2 1.4 1.6
+25 ˚C
0 ˚C
–25 ˚C
–55 ˚C
T
A
= +100 ˚C
+75 ˚C
+50 ˚C
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Ambient Temperature T
A
(˚C)
Diode Power Dissipation P
D
(mW)
200
100
50
0
150
25 50 75 100
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Ambient Temperature T
A
(˚C)
Transistor Power Dissipation P
C
(mW)
200
100
50
0
150
25 50 75 100
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
70
60
50
40
30
20
10
0246810
I
F
= 5 mA
10 mA
50 mA
20 mA
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Ambient Temperature T
A
(˚C)
Collector to Emitter Dark Current I
CEO
(nA)
–60 –40 0 20 40 60 100–20 80
100
10
1
0.1
10 000
1 000 V
CE
= 80 V
40 V
24 V
10 V
5 V
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
Collector Saturation Voltage V
CE(sat)
(V)
Collector Current I
C
(mA)
100
10
0.01
1
0.1
0.0 0.2 0.4 0.6 0.8 1.0
I
F
= 50 mA
20 mA
10 mA
5 mA
2 mA
1 mA
6
PS2601,PS2602,PS2601L,PS2602L
100
50
10
5
0.3
30
3
1
0.5
10 100 500 1 k 5 k50
SWITCHING TIME vs.
LOAD RESISTANCE
Load Resistance R
L
(Ω)
Switching Time t ( s)
µ
V
CC
= 5 V,
I
C
= 2 mA,
Sample
CTR = 290 % t
d
t
f
t
r
t
s
1 000
500
100
10
1
50
5
0.1 1 5 10 500.5
SWITCHING TIME vs.
LOAD RESISTANCE
Load Resistance R
L
(kΩ)
Switching Time t ( s)
µ
I
F
= 5 mA,
V
CC
= 5 V,
Sample
CTR = 290 %
t
d
t
r
t
s
t
f
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
Ambient Temperature T
A
(˚C)
Normalized Current Transfer Ratio CTR
1.2
0.8
0.4
0.0
1.0
0.6
0.2
–50 –25 25 50 75 1000
Normalized to 1.0
at T
A
= 25 ˚C,
I
F
= 5 mA, V
CE
= 5 V
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
FREQUENCY RESPONSE
Frequency f (kHz)
Normalized Gain Gv
5
0
–5
–10
–15
–20
–25
0.5 1 10 50 500
1 000
5 100
I
F
= 5 mA,
V
CE
= 5 V
R
L
= 1 kΩ
300 Ω
100 Ω
1.2
1.0
0.0
0.4
0.2
0.8
0.6
10
2
10
3
110
4
10
5
10
6
Time (Hr)
LONG TERM CTR DEGRADATION
CTR (Relative Value)
CTR Test condition
I
F
= 5 mA, V
CE
= 5 V
I
F
= 5 mA
20 mA
40 mA
Forward Current I
F
(mA)
Current Transfer Ratio CTR (%)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
V
CE
= 5 V 400
300
200
0
100
10.5 5 10 50
200
150
100
0
50
0.10.05 0.5
Remark The graphs indicate nominal characteristics.
7
PS2601,PS2602,PS2601L,PS2602L
RECOMMENDED SOLDERING CONDITIONS
(1) Infrared reflow soldering
• Peak reflow temperature 235 °C (package surface temperature)
• Time of temperature higher than 210 °C 30 seconds or less
• Number of reflows Three
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt % is recommended.)
60 to 90 s
(preheating)
210 ˚C
120 to 160 ˚C
Package Surface Temperature T (˚C)
Time (s)
(heating)
to 10 s
to 30 s
235 ˚C (peak temperature)
Recommended Temperature Profile of Infrared Reflow
Peak temperature 235 ˚C or below
Caution Please avoid removing the residual flux by water after the first reflow process.
(2) Dip soldering
• Temperature 260 °C or below (molten solder temperature)
• Time 10 seconds or less
• Number of times One
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of
0.2 Wt % is recommended.)
PS2601,PS2602,PS2601L,PS2602L
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
NEPOC is a trademark of NEC Corporation.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
