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STTH2003CT/CG/CF/CR/CFP
August 2003 - Ed: 7D
HIGH FREQUENCY SECONDARY RECTIFIER
®
Dual center tap Fast Recovery Epitaxial Diodes
suited for Switch Mode Power Supply and high
frequency DC/DC converters.
Packaged in TO-220AB, ISOWATT220AB,
TO-220FPAB, I2PAK or D2PAK, this device is
especially intended for secondary rectification.
DESCRIPTION
COMBINES HIGHEST RECOVERY AND
REVERSE VOLTAGE PERFORMANCE
ULTRA-FAST, SOFT AND NOISE-FREE
RECOVERY
INSULATED PACKAGES: ISOWATT220AB,
TO-220FPAB
Electric insulation: 2000VDC
Capacitance: 12pF
FEATURES AND BENEFITS
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 300 V
IF(RMS) RMS forward current 30 A
IF(AV) Average forward
current δ= 0.5 TO-220AB / D2PAK /
I2PAK Tc=140°C Per diode
Per device 10
20 A
ISOWATT220AB Tc=125°C
TO-220FPAB Tc=115°C
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 110 A
IRSM Non repetitive avalanche current tp = 20 µs square 5A
T
stg Storage temperature range -65 + 175 °C
Tj Maximum operating junction temperature 175 °C
ABSOLUTE RATINGS (limiting values, per diode)
A1
A2 K
IF(AV) 2x10A
V
RRM 300 V
Tj (max) 175 °C
VF(max) 1 V
trr (max) 35 ns
MAJOR PRODUCT CHARACTERISTICS
A1 A2
K
D2PAK
STTH2003CG
A1
A2
K
TO-220AB
STTH2003CT
A1
A2
K
ISOWATT220AB
STTH2003CF
A1
A2
K
I2PAK
STTH2003CR
A1
A2
K
TO-220FPAB
STTH2003CFP
STTH2003CT/CG/CF/CR/CFP
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Symbol Parameter Tests conditions Min. Typ. Max. Unit
IR*Reverse leakage
current VR= 300 V Tj = 25°C 20 µA
Tj = 125°C 30 300
VF** Forward voltage drop IF= 10 A Tj = 25°C 1.25 V
Tj = 125°C 0.85 1
Pulse test : * tp=5ms,δ<2%
** tp = 380 µs, δ<2%
To evaluate the maximum conduction losses use the following equation :
P=0.75xI
F(AV) + 0.025 IF2(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Value Unit
Rth (j-c) Junction to case TO-220AB / D2PAK /I2PAK Per diode 2.5 °C/W
Total 1.3
ISOWATT220AB Per diode 3.9
Total 3.2
TO-220FPAB Per diode 4.6
Total 4
Rth (c) TO-220AB / D2PAK /I2PAK Coupling 0.1
ISOWATT220AB Coupling 2.5
TO-220FPAB Coupling 3.5
THERMAL RESISTANCES
Symbol Tests conditions Min. Typ. Max. Unit
trr IF= 0.5 A Irr = 0.25 A IR=1A Tj=25°C25 ns
IF=1A dI
F
/dt=-50A/µsV
R
=30V 35
tfr IF=10A dI
F
/dt = 100 A/µs
VFR =1.1xV
Fmax. Tj=25°C230 ns
VFP 3.5 V
Sfactor Vcc = 200V IF=10A
dIF/dt = 200 A/µsTj = 125°C 0.3 -
IRM 8A
RECOVERY CHARACTERISTICS
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STTH2003CT/CG/CF/CR/CFP
024681012
0
2
4
6
8
10
12
14
IF(a v) (A)
P1(W)
T
δ=tp/T tp
δ= 1
δ= 0.5
δ= 0.2
δ= 0.1
δ= 0.05
Fig. 1: Conduction losses versus average current
(per diode).
0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00
1
10
100
200
VFM(V)
IFM(A)
Tj=125°C
Tj=25°C
Tj=75°C
Fig. 2: Forward voltage drop versus forward
current (maximum values, per diode).
1E-3 1E-2 1E-1 1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
δ=tp/T tp
Single pulse
δ= 0.5
δ= 0.2
δ= 0.1
Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB
/D
2
PAK/I
2
PAK).
0 50 100 150 200 250 300 350 400 450 500
0
20
40
60
80
100 trr(ns)
VR=200V
Tj=125°C
IF=2*IF(av)
IF=IF(av)
IF=0.5*IF(av)
dIF/dt(A/µs)
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence, per diode).
0 50 100 150 200 250 300 350 400 450 500
0
2
4
6
8
10
12
14
16
dIF/dt(A/µs)
IRM(A)
VR=200V
Tj=125°C IF=2*IF(av)
IF=IF(av)
IF=0.5*IF(av)
Fig. 4: Peak reverse recovery current versus
dIF/dt (90% confidence, per diode).
1E-2 1E-1 1E+0 1E+1
0.0
0.2
0.4
0.6
0.8
1.0 Zth(j-c)/Rth(j-c)
tp(s)
T
δ=tp/T tp
Single pulse
δ= 0.5
δ= 0.2
δ= 0.1
Fig. 3-2: Relative variation of thermal impedance
junction to case versus pulse duration
(ISOWATT220AB).
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STTH2003CT/CG/CF/CR/CFP
25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
Tj(°C)
IRM
S factor
Fig. 7: Relative variation of dynamic parameters
versusjunctiontemperature(reference:Tj=125°C).
0 50 100 150 200 250 300 350 400 450 500
0
2
4
6
8
10 V (V)FP
IF=IF(av)
Tj=125°C
dIF/dt(A/µs)
Fig. 8: Transient peak forward voltage versus
dIF/dt (90% confidence, per diode) (TO-220AB).
0 50 100 150 200 250 300 350 400 450 500
0
100
200
300
400
500 t (ns)fr
VFR=1.1*VF max.
IF=IF(av)
Tj=125°C
dIF/dt(A/µs)
Fig. 9: Forward recovery time versus dIF/dt (90%
confidence, per diode).
0 5 10 15 20 25 30 35 40
0
10
20
30
40
50
60
70
80 Rth(j-a) (°C/W)
S(Cu ) (c m²)
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35µm)
(D2PAK).
0 50 100 150 200 250 300 350 400 450 500
0.00
0.10
0.20
0.30
0.40
0.50
0.60 S factor
VR=200V
Tj=125°C
dIF/dt(A/µs)
Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical
values, per diode).
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STTH2003CT/CG/CF/CR/CFP
PACKAGE MECHANICAL DATA
D2PAK
A
C2
D
R
A2
MV2
C
A1
G
L
L3
L2
B
B2
E
*
* FLAT ZONE NO LESS THAN 2mm
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037
B2 1.14 1.70 0.045 0.067
C 0.45 0.60 0.017 0.024
C2 1.23 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
E 10.00 10.40 0.393 0.409
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069
M 2.40 3.20 0.094 0.126
R 0.40 typ. 0.016 typ.
V2
8.90 3.70
1.30
5.08
16.90
10.30
FOOT PRINT DIMENSIONS (in millimeters)
D2PAK
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STTH2003CT/CG/CF/CR/CFP
PACKAGE MECHANICAL DATA
ISOWATT220AB
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
B 2.50 2.70 0.098 0.106
D 2.50 2.75 0.098 0.108
E 0.40 0.70 0.016 0.028
F 0.75 1.00 0.030 0.039
F1 1.15 1.70 0.045 0.067
F2 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.40 2.70 0.094 0.106
H 10.00 10.40 0.394 0.409
L2 16.00 typ. 0.630 typ.
L3 28.60 30.60 1.125 1.205
L4 9.80 10.60 0.386 0.417
L6 15.90 16.40 0.626 0.646
L7 9.00 9.30 0.354 0.366
Diam 3.00 3.20 0.118 0.126
PACKAGE MECHANICAL DATA
TO-220AB
A
C
D
L7
Dia
L5
L6
L9
L4
F
H2
G
G1
L2 F2
F1
E
M
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.4 typ. 0.645 typ.
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. 3.75 3.85 0.147 0.151
STTH2003CT/CG/CF/CR/CFP
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PACKAGE MECHANICAL DATA
TO-220FPAB
H
L3
L2
L4
L6
G
G1 F
F1
L5
D
E
L7
A
B
Dia
F2
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.018 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.70 0.045 0.067
F2 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 Typ. 0.63 Typ.
L3 28.6 30.6 1.126 1.205
L4 9.8 10.6 0.386 0.417
L5 2.9 3.6 0.114 0.142
L6 15.9 16.4 0.626 0.646
L7 9.00 9.30 0.354 0.366
Dia. 3.00 3.20 0.118 0.126
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STTH2003CT/CG/CF/CR/CFP
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implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
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© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
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PACKAGE MECHANICAL DATA
I2PAK
e
D
L
L1
L2
b1
b
b2
E
A
c2
A1
c
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
b 0.70 0.93 0.028 0.037
b1 1.14 1.17 0.044 0.046
b2 1.14 1.17 0.044 0.046
c 0.45 0.60 0.018 0.024
c2 1.23 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106
E 10.0 10.4 0.394 0.409
L 13.1 13.6 0.516 0.535
L1 3.48 3.78 0.137 0.149
L2 1.27 1.40 0.050 0.055
Ordering code Marking Package Weight Base qty Delivery
mode
STTH2003CT STTH2003CT TO-220AB 2.2 g 50 Tube
STTH2003CG STTH2003CG D2PAK 1.48 g 50 Tube
STTH2003CG-TR STTH2003CG D2PAK 1.48 g 500 Tape & reel
STTH2003CF STTH2003CF ISOWATT220AB 2.08 g 50 Tube
STTH2003CFP STTH2003CFP TO-220FPAB 2.08 g 50 Tube
STTH2003CR STTH2003CR I2PAK 1.49 g 50 Tube
Cooling method: by conduction (C)
Recommended torque value: 0.55 N.m.
Maximum torque value: 0.70 N.m.
Epoxy meets UL 94,V0