SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 2 ~- JANUARY 1996 FEATURES * 60 Volt Vorg * Gain of 10K at |.=0.5 Amp PARTMARKING DETAILS~ FMMT38A - 4J FMMT38A FMMT38B FMMT38C FMMT38B - 5J FMMT38C - 7J ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Veso 80 Vv Collector-Emitter Voltage VocEo 60 Vv Emitter-Base Voltage Veso 10 Vv Peak Pulse Current lom 800 mA Continuous Collector Current le 300 mA Power Dissipation at T,,=25C Prot 330 mw Operating and Storage Temperature Range = |7;:Tsrg -55 to +150 c ELECTRICAL CHARACTERISTICS (at Tamp= 25C). PARAMETER SYMBOL| MIN. MAX. UNIT ;|CONDITIONS. Collector-Base Vienicao =| 80 Vv Ip=10pnA, |p=0 Breakdown Voltage Collector-Emitter Veeosus) |60 Vv lce=10mA, Ig=0 Sustaining Voltage Emitter-Base Viprieso | 10 v le=10pA, ip=0 Breakdown Voltage Collector Cut-Off lego 100 nA Vep=60V, le=0 Current Emitter Cut-Off Current |lego 100 nA Veg=8V, I-=0 Coliector-Emitter Vee(sath 1.25 Vv Ic=800mA, Ip=8mA* Saturation Voltage Base-Emitter Veeion} 1.8 v Ic=800mA, Vep=5V* Turn-on Voltage Static FMMT38A| hee 500 Ic=100MA, Vcp=5V* Forward 1000 ic=500mA, Vce=5V* Current Transfer FMMT38B 2000 Ic=100mA, Vcg=5V* Ratio 4000 Ic=500mA, Vee=5V* FMMT38C 5000 1p=100mA, Vcg=5V* 10000 Ip=500mA, Vcg=5V* *Measured under pulsed conditions. Pulse width=300us. Duty cycle < 2% Spice parameter data is available upon request for this device 3- 100FMMT38A FMMT38B TYPICAL CHARACTERISTICS 10 & -_ a 2 08 oO s 3 wv 2 = 06 gS 2 E 8 3 > 04 S wz = 08 or 0.01 o1 1 10 g001 0.01 0.1 1 10 Ic - Collector Current (Amps) Ic - Collector Current (Amps) VCE(sat) v Ic hFE v Ic 20 z z = S18 * 0 2 : 0s 0.001 0.01 0.1 1 10 0.001 001 O41 1 10 Ic - Collector Current {Amps) Ic - Collector Current (Amps) VBE(sat) v Ic VBE(on) v Ic = z a 2 E @ =< o - C Cc g g 2 5 3 8 = 5 o B 2 e 8 0 2 0.0001 3.001 001 at 1 10 190 Pulse Width (seconds) 1 10 100 1000 Maximum transient thermal impedance Vce - Collector Voltage {Volts} Safe Operating Area 3-101 FMMT38C