BSB014N04LX3GXUMA1 - INFINEON TECHNOLOGIES AG

Industrial & Multimarket

Data Sheet

2.3, 2011-05-24

Final

OptiMOS™

BSB014N04LX3 G

n-Channel Power MOSFET

OptiMOS™ Power-MOSFET
BSB014N04LX3 G
  
Final Data Sheet 1 2.3, 2011-05-24
  
1 Description
OptiMOS™40V products are class leading power MOSFETs for highest power
density and energy efficient solutions. Ultra low gate- and output charges together
with lowest on state resistance in small  footprint packages make  OptiMOS™ 40V
the best choice forthe demanding requirements of voltage regulator solutions in
Servers, Datacom and Telecom applications. Super fast switching Control FETs
together with low EMI Sync FETs provide solutions that are easy to design in.
OptiMOS™ products are available in high performance packages to tackle your
most challenging applications giving full flexibility in optimizing space- efficiency
and cost. OptiMOS™ products are designed to meet and exceed the energy
efficiency and power density requirements of the sharpened next generation
voltage regulation standards in computing applications
Features
• Optimized for high switching frequency DC/DC converter
• 100% avalanche tested
• Excellent gate charge x RDS(on) product (FOM)
• Qualified according to JEDEC1) for target applications
• Pb-free plating; RoHS compliant
• Very low on-r esistance RDS(on)
• Low profile (<0.7 mm)
• Low parasitic inductance
• Double.sided cooling
• Compatible with DirectFET® packa ge MX footprint and outline
•100% Rg Tested
Applications
• On board  powe r fo r ser ve r
• Power managment for high performance computing
• Synchronous rectification
• High power density point of load converters
1) J-STD20 and JESD22
Table 1 Key Performance Parameters
Parameter Value Unit Related Links
VDS 40 V IFX OptiMOS webpage
RDS(on),max 1.4 mΩIFX OptiMOS product brief
ID180 A IFX OptiMOS spice models
QOSS 89 nC IFX Design tools
Qg.typ 148
Type Package Marking
BSB014N04LX3 G MG-WDSON-2 0104

OptiMOS™ Power-MOSFET

BSB014N04LX3 G

Final Data Sheet 2 2.3, 2011-05-24

2Maximum ratings

at Tj = 25 °C, unless otherwise specified.

3 Thermal characteristics

Table 2 Maximum ratings

Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

Continuous drain current ID--180 AVGS=10 V, TC=25 °C

128 VGS=10 V, TC=100 °C

36 VGS=10 V, TA=25 °C,

RthJA=45 K/W1)

1) J-STD22 and JESD22

Pulsed drain current2)

2) See figure 3 for more detailed information

ID,pulse --400 TC=25 °C

Avalanche current, single pulse3)

3) See figure 13 for more detailed information

IAS --50

Avalanche energy, single pulse EAS --260 mJID=50 A,RGS=25 Ω

Gate source voltage VGS -20 - 20 V

Power dissipation Ptot --89 WTC=25 °C

2.8 TA=25 °C, RthJA=45 K/W

Operating and storage temperature Tj,Tstg -40 - 150 °C

IEC climatic category; DIN IEC 68-1 55 150 56 Ncm

Table 3 Thermal characteristics

Parameter Symbol Values Unit Note /

Test Condition

Min. Typ. Max.

Thermal resistance, junction - case RthJC - 1.0 - °K/W bottom

1.4 top

Device on PCB RthJA --45 6 cm

2 cooling area1)

1) Device on 40 mm x 40 mm x 1.5 epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB

is vertical in still air.

OptiMOS™ Power-MOSFET

BSB014N04LX3 G

Electrical characteristics

Final Data Sheet 3 2.3, 2011-05-24

4 Electrical characteristics

Electrical characteristics, at Tj=25 °C, unless otherwise specified.

Table 4 Static characteristics

Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

Drain-source breakdown voltage V(BR)DSS 40 - - V VGS=0 V, ID=1.0 mA

Gate threshold voltage VGS(th) 1.2 - 2 VDS=VGS, ID=250 µA

Zero gate voltage drain current IDSS -0.110µAVDS=40 V, VGS=0 V,

Tj=25 °C

- 10 100 VDS=40 V, VGS=0 V,

Tj=125 °C

Gate-source leakage current IGSS - 10 100 nA VGS=20 V, VDS=0 V

Drain-source on-state resistance RDS(on) -1.62mΩVGS=4.5 V, ID=25A

-1.21.4 VGS=10 V, ID=30 A

Gate resistance RG0.2 0.5 1.0 Ω

Transconductance gfs 65 130 S |VDS|>2|ID|RDS(on)max,

ID=30 A

Table 5 Dyn ami c ch a r acte ris tic s

Parameter Symbol Values Unit Note /

Test Condition

Min. Typ. Max.

Input capacitance Ciss - 12700 16900 pF VGS=0 V, VDS=20 V,

f=1 MHz

Output capacitance Coss - 2400 3200

Reverse transfer capacitance Crss -140-

Turn-on dela y time td(on) -12-nsVDD=20V, VGS=10 V,

ID=30 A, RG=1.6 Ω

Rise time tr-8.4-

Turn-off delay time td(off) -60-

Fall time tf-10-

OptiMOS™ Power-MOSFET

BSB014N04LX3 G

Electrical characteristics

Final Data Sheet 4 2.3, 2011-05-24

Table 6 Gate charge characteristics1)

1) See figure 16 for gate charge parameter definition

Parameter Symbol Values Unit Note /

Test Condition

Min. Typ. Max.

Gate to sour ce charge Qgs -33-nCVDD=20 V,

ID=30 A,

VGS=0 to 10 V

Gate charge at threshold Qg(th) -19-

Gate to drain charge Qgd -15-

Switching charge Qsw -29-

Gate charge total Qg- 148 196

Gate plateau voltage Vplateau -2.8-V

Gate charge total Qg-7195nCVDD=20 V,

ID=30 A,

VGS=0 to 4.5V

Gate charge total, sync. FET Qg(sync) 139 VDS=0.1 V,

VGS=0 to 10 V

Output charge Qoss 89 VDD=20 V, VGS=0 V

Table 7 Reverse diode characteristics

Parameter Symbol Values Unit Note /

Test Condition

Min. Typ. Max.

Diode continuous forward current Is81 A TC=25 °C

Diode pulse current IS,pulse 400

Diode forward voltage VSD -0.771.1VVGS=0 V, IF=30 A,

Tj=25 °C

Reverse reco very charge Qrr --50nCVR=15 V, IF=Is,

diF/dt=400 A/µs

OptiMOS™ Power-MOSFET

BSB014N04LX3 G

Electrical characteristics diagrams

Final Data Sheet 5 2.3, 2011-05-24

5 Electrical characteristics diagrams

Table 8

1 Power dissipation 2 Drain current

Ptot = f(TC) ID=f(TC); parameter:VGS

Table 9

3 Safe operating area TC=25 °C 4 Max. transient thermal impedance

ID=f(VDS); Tj=25 °C; D=0; parameter: Tp Z(thJC)=f(tp); parameter: D=tp/T

OptiMOS™ Power-MOSFET

BSB014N04LX3 G

Electrical characteristics diagrams

Final Data Sheet 6 2.3, 2011-05-24

Table 10

5 Typ. output characteristics TC=25 °C 6 Typ. drain-source on-state resistance

ID=f(VDS); Tj=25 °C; parameter: VGS RDS(on)=f(ID); Tj=25 °C; parameter: VGS

Table 11

7 Typ. transfer characteristics 8 Typ. forward transconductance

ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C

OptiMOS™ Power-MOSFET

BSB014N04LX3 G

Electrical characteristics diagrams

Final Data Sheet 7 2.3, 2011-05-24

Table 12

9 Drain-sour ce on-s ta te resistanc e 10 Typ. gate th re s hold voltage

RDS(on)=f(Tj); ID=30 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS; ID=250 µA

Table 13

11 Typ. capacitances 12 Forward characteristics of reverse diode

C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD); parameter: Tj

OptiMOS™ Power-MOSFET

BSB014N04LX3 G

Electrical characteristics diagrams

Final Data Sheet 8 2.3, 2011-05-24

Table 14

13 Avalanche characteristics 14 Typ. gate charge

IAS=f(tAV); RGS=25 Ω; parameter: Tj(start) VGS=f(Qgate); ID=30 A pulsed; parameter: VDD

Table 15

15 Drain-source breakdown voltage 16 Gate charge waveforms

VBR(DSS)=f(Tj); ID=1 mA

OptiMOS™ Power-MOSFET

BSB014N04LX3 G

Package outlines

Final Data Sheet 9 2.3, 2011-05-24

6 Package outlines

Figure 1 Outlines MG-WDSON-2, dimensions in mm/inches

OptiMOS™ Power-MOSFET

BSB014N04LX3 G

Package outlines

Final Data Sheet 10 2.3, 2011-05-24

7 Package outlines

Figure 2 Outlines MG-WDSON-2, dimensions in mm/inches

OptiMOS™ Power-MOSFET

BSB014N04LX3 G

Package outlines

Final Data Sheet 11 2.3, 2011-05-24

8 Package outlines

Figure 3 Outlines MG-WDSON-2, dimensions in mm/inches

9 Marking layout

OptiMOS™ Power-MOSFET

BSB014N04LX3 G

Revision History

Final Data Sheet 12 2.3, 2011-05-24

9 Revision History

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Edition 2011-05-24

Published by

Infineon Technologies AG

81726 Munich, Germany

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Revision History: 2011-05-24, 2.3

Previous Revision:

Revision Subjects (major changes since last revision)

0.1 Release of target data sheet

2.2 DirectFET Disclaimer Expired

2.3 Insert Marking Layout