UMT3904 / SST3904 / MMST3904
Transistors
Rev.B 1/4
NPN General Purpose Transistor
UMT3904 / SST3904 / MMST3904
zFeatures
1) BVCEO > 40V (IC = 1mA)
2)
Complements the UMT3906 / SST3906 / MMST3906.
zPackage, marking and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit
(pieces)
UMT3904
UMT3
R1A
T106
3000
SST3904
SST3
R1A
T116
3000
MMST3904
SMT3
R1A
T146
3000
zA bsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Tj
Tstg
Limits
60
40
6
0.2
0.35
150
−55 to +150
Unit
V
V
V
A
W
W
PC0.2
∗
°C
°C
∗
When mounted on a 7 x 5 x 0.6 mm ceramic board.
SST3904, MMST3904
UMT3904,
SST3904,
MMST3904
zDimensions (Unit : mm)
UMT3904
SST3904
MMST3904
ROHM : UMT3
EIAJ : SC-70 (1) Emitter
(2) Base
(3) Collector
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59 (1) Emitter
(2) Base
(3) Collector
zElectrical characteristics (Ta = 25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
BV
CBO
BV
CEO
BV
EBO
I
CES
I
EBO
60
40
6
-
-
-
-
-
-
-
-
-
-
50
50
V
V
V
nA
nA
I
C
= 10µA
I
C
= 1mA
I
E
= 10µA
V
CB
= 30V
V
EB
= 3V
- - 0.95
Base-emitter saturation voltage V
BE(sat)
0.65 - 0.85 V
- - 0.3 I
C
/I
B
= 50mA/5mA
Collector-emitter saturation voltage V
CE(sat)
- - 0.2 VI
C
/I
B
= 10mA/1mA
I
C
/I
B
= 50mA/5mA
I
C
/I
B
= 10mA/1mA
30 - -
60 - -
DC current transfer ratio h
FE
100 - 300 -
70 - -
40 - - V
CE
= 1V , I
C
= 0.1mA
V
CE
= 1V , I
C
= 1mA
V
CE
= 1V , I
C
= 10mA
V
CE
= 1V , I
C
= 50mA
V
CE
= 1V , I
C
= 100mA
Transition frequency
Collector output capacitance f
T
Cob 300
--
--
4MHz
pF V
CE
= 20V , I
E
= −10mA, f = 100MHz
V
CB
= 10V , f = 100kHz
Emitter input capacitance Cib - - 8 pF V
EB
= 0.5V , f = 100kHz
Delay time td - - 35 ns V
CC
= 3V , V
BE(OFF)
= 0.5V , I
C
= 10mA , I
B1
= 1mA
V
CC
= 3V , V
BE(OFF)
= 0.5V , I
C
= 10mA , I
B1
= 1mA
Rise time tr - - 35 ns
Storage time tstg - - 200 ns V
CC
= 3V , I
C
= 10mA , I
B1
= −I
B2
= 1mA
V
CC
= 3V , I
C
= 10mA , I
B1
= −I
B2
= 1mA
Fall time tf - - 50 ns
~
UMT3904 / SST3904 / MMST3904
Transistors
Rev.B 2/4
zElectrical characteristic curves
0
8
6
4
2
10
200 10 I
B
=0
µ
A
5.0
10
15
20
25
30
35
40 Ta=25°C
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR-EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter output
characteristics
Fig.2 Collector-emitter saturation
voltage vs. collector current
0.1 1.0 10 100
0.2
0.3
0.1
0
COLLECTOR EMITTER SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : IC (mA)
Ta=25°C
IC / IB=10
Fig.3 DC current gain vs. collector current ( Ι )
0.1 101.0 100 1000
100
10
500
5
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : I
C
(mA)
Ta=25°C
V
CE
=1V 10V
5V
3V
Fig.4 DC current gain vs. collector current ( ΙΙ )
0.1 101.0 100 1000
100
10
500
5
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(
mA)
V
CE
=5V
Ta=125°C
Ta=25°C
Ta=−55°C
UMT3904 / SST3904 / MMST3904
Transistors
Rev.B 3/4
0.01 1.00.1 10 100
100
10
500
5
AC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.5 AC current gain vs. collector current
Ta=25°C
V
CE
=5V
f=1kHz
0.1 1.0 10 100
0.8
1.2
1.8
1.6
0.4
0
BASE EMITTER SATURATION VOLTAGE : VBE(sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.6 Base-emitter saturation
voltage vs. collector current
Ta=25°C
I
C
/ I
B
=10
0.1 1.0 10 100
0.8
1.2
1.8
1.6
0.4
0
BASE EMITTER VOLTAGE : VBE(ON)
(V)
COLLECTOR CURRENT : IC (
mA)
Fig.7 Grounded emitter propagation
characteristics
Ta=25°C
V
CE=5V
1.0 10 100
100
1000
10
TURN ON TIME : ton (
ns)
COLLECTOR CURRENT : I
C
(
mA)
Fig.8 Turn-on time vs. collector
current
Ta=25
°C
I
C
/ I
B
=10
V
CC
=3V
15V40V
1.0 10 100
100
1000
10
RISE TIME : tr (
ns)
COLLECTOR CURRENT : IC (
mA)
Fig.9 Rise time vs. collector
current
Ta=25°C
I
C / IB=10
VCC=40V
Ta=25°C
I
C
=10I
B1
=10I
B2
1.0 10 100
100
1000
10
STORAGE TIME : ts (ns)
COLLECTOR CURRENT : I
C
(mA)
Fig.10 Storage time vs. collector
current
V
CE
=3V
40V
15V
1.0 10 100
100
1000
10
FALL TIME : tf (
ns)
COLLECTOR CURRENT : I
C
(
mA)
Fig.11 Fall time vs. collector
current
Ta=25
°C
V
CC
=40V
I
C
/I
B
=10
0.1 1.0 10 100
10
50
0.5
1
CAPACITANCE (
pF)
REVERSE BIAS VOLTAGE (
V)
Fig.12 Input / output capacitance
vs. voltage
Ta=25°C
f=1MHz
Cib
Cob
UMT3904 / SST3904 / MMST3904
Transistors
Rev.B 4/4
0.1 1.0 10 100
10
1.0
100
0.1
COLLECTOR-EMITTER VOLTAGE : V
CE
(
V)
COLLECTOR CURRENT : I
C
(
mA)
Fig.13 Gain bandwidth product
Ta=25°C
100MHz 200MHz 400MHz
300 MHz
500MHz
200MHz 100MHz
300MHz
1.0 10 100
100
1000
10
CURRENT GAIN-BANDWIDTH PRODUCT : f
T
(MHz)
COLLECTOR CURRENT : I
C
(mA)
Fig.14 Gain bandwidth product
vs. collector current
Ta=25°C
V
CE
=5V
0.1 1 10 100
10
1
100
0.1
h PARAMETER NORMALIZED TO 1mA
COLLECTOR CURRENT : I
C
(
mA)
Fig.15 h parameter vs. collector current
V
CE
=5V
f=270Hz
hfe
hoe
hie hre
Ta=25°C
I
C
=1mA
hie=3.84kΩ
hfe=141
hre=5.03 × 10
−5
hoe=5.58µS
07525 50 100 125 150
100n
10n
1n
10µ
1µ
0.1n
COLLECTOR CUTOFF CURRENT : I
CBO
(
A)
ANBIENT TEMPERATURE : Ta (°C)
Fig.16 Noise characteristics ( Ι )
V
CB
=25V
0.01 0.1 1 10
10k
1k
100k
100
SOURCE RESISTANCE : R
S
(Ω)
COLLECTOR CURRENT : I
C
(
mA)
Fig.17 Noise characteristics ( ΙΙ )
Ta=25°C
V
CE
=5V
f=10kHz
12dB
8dB
8.0dB
3dB
1.0dB
3.0dB
5dB
5.0dB
NF=1.0dB
0.01 0.1 1 10
10k
1k
100k
100
SOURCE RESISTANCE : RS (Ω)
COLLECTOR CURRENT : I
C
(
mA)
Fig.18 Noise characteristics ( ΙΙΙ )
Ta=25°C
V
CE
=5V
f=1kHz
12dB
8dB
8.0dB
3dB
1.0dB
3.0dB
5dB
5.0dB
NF=1.0dB
0.01 0.1 1 10
10k
1k
100k
100
SOURCE RESISTANCE : R
S
(Ω)
COLLECTOR CURRENT : I
C
(mA)
Fig.19 Noise characteristics ( ΙV )
Ta=25°C
V
CE
=5V
f=10Hz
12dB
8dB
8.0dB
3dB
5dB
5.0dB
NF=3.0dB
10 1k100 10k 100k
6
12
10
8
4
2
0
NOISE FIGURE : NF (dB)
FREQUENCY : f (Hz)
Fig.20 Noise vs. collector current
Ta=25°C
V
CE
=5V
I
C
=100µA
R
S
=10kΩ
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
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otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Appendix1-Rev2.0
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(such as audio visual equipment, office-automation equipment, communications devices, electrical
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for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
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cannot be held responsible for any damages arising from the use of the products under conditions out of the
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Appendix
