HEXFET® Power MOSFET
08/03/10
Description
VDSS = -55V
RDS(on) = 0.105
IRF7342QPbF
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Parameter Max. Units
VDS Drain- Source Voltage -55 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V -3.4
ID @ TC = 70°C Continuous Drain Current, VGS @ 10V -2.7 A
IDM Pulsed Drain Current -27
PD @TC = 25°C Power Dissipation 2.0
PD @TC = 70°C Power Dissipation 1.3
Linear Derating Factor 0.016 W/°C
VGS Gate-to-Source Voltage ± 20 V
VGSM Gate-to-Source Voltage Single Pulse tp<10µs 30 V
EAS Single Pulse Avalanche Energy114
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient––– 62.5 °C/W
Thermal Resistance
Absolute Maximum Ratings
W
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
45
6
7
SO-8
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Advanced Process Technology
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Ultra Low On-Resistance
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Dual P Channel MOSFET
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Surface Mount
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Available in Tape & Reel
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150°C Operating Temperature
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Lead-Free
These HEXFET® Power MOSFET's in a Dual SO-8 package
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of
these HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to
make this design an extremely efficient and reliable device
for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
PD - 96109A
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Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA
V(BR)DSS/TJBreakdown Voltage Temp. Coefficient ––– -0.054 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.095 0.105 VGS = -10V, ID = -3.4A
––– 0.150 0.170 VGS = -4.5V, ID = -2.7A
VGS(th) Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA
gfs Forward Transconductance 3.3 ––– ––– S VDS = -10V, ID = -3.1A
––– ––– -2.0 VDS = -55V, VGS = 0V
––– ––– -25 VDS = -55V, VGS = 0V, TJ = 55°C
Gate-to-Source Forward Leakage –– –– -100 VGS = -20V
Gate-to-Source Reverse Leakage –– –– 100 VGS = 20V
QgTotal Gate Charge –– 26 38 ID = -3.1A
Qgs Gate-to-Source Charge ––– 3.0 4.5 nC VDS = -44V
Qgd Gate-to-Drain ("Miller") Charge ––– 8.4 13 VGS = -10V, See Fig. 10
td(on) Turn-On Delay Time ––– 14 22 VDD = -28V
trRise Time ––– 10 15 ID = -1.0A
td(off) Turn-Off Delay Time ––– 43 64 RG = 6.0
tfFall Time ––– 22 32 RD = 16,
Ciss Input Capacitance ––– 690 ––– VGS = 0V
Coss Output Capacitance ––– 210 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 86 ––– ƒ = 1.0MHz, See Fig. 9
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V
trr Reverse Recovery Time ––– 54 80 ns TJ = 25°C, IF = -2.0A
Qrr Reverse RecoveryCharge ––– 85 130 nC di/dt = -100A/µs
Source-Drain Ratings and Characteristics
 
  -27
-2.0
A
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD -3.4A, di/dt -150A/µs, VDD V(BR)DSS,
TJ 150°C
Notes:
Starting TJ = 25°C, L = 20mH
RG = 25, IAS = -3.4A. (See Figure 8)
Pulse width 300µs; duty cycle 2%.
When mounted on 1 inch square copper board, t<10 sec
IRF7342QPbF
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0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-15V
-12V
-10V
-8.0V
-6.0V
-4.0V
-3.5V
-3.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-3.0V
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-15V
-12V
-10V
-8.0V
-6.0V
-4.0V
-3.5V
-3.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-3.0V
1
10
100
34567
V = -25V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
-4.5V -4.5V
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Fig 5. Normalized On-Resistance
Vs. Temperature
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
0246810 12
0.080
0.120
0.160
0.200
0.240
R , Drain-to-Source On Resistance
-I , Drain Current (A)
D
DS (on)
VGS = -4.5V
VGS = -10V
()
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-10V
-3.4 A
25 50 75 100 125 150
0
50
100
150
200
250
300
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-1.5A
-2.7A
-3.4A
R
DS(on)
, Drain-to-Source On Resistance ( Ω )
0.05
0.15
0.25
0.35
0.45
2581114
A
GS
-V , Gate-to-Source Voltage (V)
I = -3.4 A
D
IRF7342QPbF
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010 20 30 40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D-3.1A
V =-12V
DS
V =-30V
DS
V =-48V
DS
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
-
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
1 10 100
0
240
480
720
960
1200
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
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SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MI N MAX
MILLIMETERSINCHES
MIN MAX
DIM
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BAS IC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 4
8X L 8X c
y
0.25 [.010] C A B
e1
A
A1
8X b
C
0.10 [.004]
4312
F OOT P R I N T
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OU T L I NE CONF OR MS T O JE DE C OU T L I NE MS -012 AA.
NOT ES :
1. DIMENS IONING & T OLERANCING PER ASME Y14.5M-1994.
2. CONT ROL LING DIME NS ION: MILL IMET ER
3. DIME NS IONS ARE S HOWN IN MILL IMET E RS [INCHE S ].
5 DIME NS ION DOE S NOT INCLU DE MOL D PROT RUS IONS .
6 DIME NS ION DOE S NOT INCLU DE MOL D PROT RUS IONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
7 DIMENS ION IS THE LENGTH OF LEAD FOR SOLDERING TO
A S UBST RAT E.
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
8X 1.78 [.070]
DAT E CODE (YWW)
XXXX
INTERNATIONAL
RECTIFIER
LOGO
F 7101
Y = LAST DIGIT OF THE YEAR
PART NUMBER
LOT CODE
WW = WE E K
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
P = DE S I GNAT E S L E AD- F R E E
PRODUCT (OPTIONAL)
A = ASSEMBLY SITE CODE
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
IRF7342QPbF
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330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/2010
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.