MBR10Hxx, MBRF10Hxx & MBRB10Hxx Series
Vishay Semiconductors
for merly General Semiconductor
Document Number 88780 www.vishay.com
03-Mar-03 1
New Product
Schottky Barrier Rectifiers Reverse Voltage 35 to 60 V
Forward Current 10 A
0.08
(2.032)
0.24
(6.096)
0.42
(10.66)
0.63
(17.02)
0.12
(3.05)
0.33
(8.38)
Mounting Pad Layout TO-263AB
0.380 (9.65)
0.411 (10.45)
0.320 (8.13)
0.360 (9.14)
0.591 (15.00)
0.624 (15.85)
12
0.245 (6.22)
MIN
K
0.027 (0.686)
0.037 (0.940)
0.105 (2.67)
0.095 (2.41) 0.205 (5.20)
0.195 (4.95)
K
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.021 (0.53)
0.014 (0.36)
0.110 (2.79)
0.140 (3.56)
0.090 (2.29)
0.110 (2.79)
0.047 (1.19)
0.055 (1.40)
PIN 1
PIN 2 K - HEATSINK
0-0.01 (0-0.254)
0.060 (1.52)
0.405 (10.27)
0.383 (9.72)
0.191 (4.85)
0.171 (4.35)
0.600 (15.5)
0.580 (14.5)
0.560 (14.22)
0.530 (13.46)
0.037 (0.94)
0.027 (0.69)
0.140 (3.56)
0.130 (3.30)
0.350 (8.89)
0.330 (8.38)
0.188 (4.77)
0.172 (4.36)
0.110 (2.80)
0.100 (2.54)
0.131 (3.39)
0.122 (3.08)
0.110 (2.80)
0.100 (2.54)
0.022 (0.55)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
12
PIN
DIA.
DIA.
PIN 1
PIN 2
0.676 (17.2)
0.646 (16.4)
ITO-220AC (MBRF10Hxx)
TO-220AC (MBR10Hxx)
Dimensions in inches
and (millimeters)
TO-263AB (MBRB10Hxx)
0.154 (3.91)
0.148 (3.74) DIA.
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
0.160 (4.06)
0.140 (3.56)
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
12 1.148 (29.16)
1.118 (28.40)
0.105 (2.67)
0.095 (2.41)
0.410 (10.41)
0.390 (9.91) 0.635 (16.13)
0.625 (15.87)
0.603 (15.32)
0.573 (14.55)
PIN
0.415 (10.54) MAX.
PIN 1
PIN 2 CASE
0.370 (9.40)
0.360 (9.14)
Mechanical Data
Case: JEDEC T O-220A C, ITO-220A C & T O-263AB molded
plastic body
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 oz., 2.24 g
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94 V-0
• Metal silicon junction, majority carr ier conduction
• Low forward voltage drop, low power loss
and high efficiency
• Guardring for overvoltage protection
• For use in low voltage, high frequency inver ters, free
wheeling, and polarity protection applications
• High temperature soldering guaranteed:
250 °C/10 seconds, 0.25" (6.35 mm) from case
• Rated for reverse surge and ESD
• 175 °C maximum operation junction temperature
MBR10Hxx, MBRF10Hxx & MBRB10Hxx Series
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88780
203-Mar-03
Maximum Ratings (TC= 25 °C unless otherwise noted)
Parameter Symbol MBR10H35 MBR10H45 MBR10H50 MBR10H60 Unit
Maximum repetitive peak reverse voltage VRRM 35 45 50 60 V
Wor king peak reverse voltage VRWM 35 45 50 60 V
Maximum DC blocking voltage VDC 35 45 50 60 V
Maximumaverage forward rectified current (See fig.1) IF(AV) 10 A
Peak repetitive forward current at TC= 150 °C
(20 KHz sq. wave) IFRM 20 A
Non-repetitive avalanche energy
at 25 °C, I AS = 4 A, L = 10 mH EAS 80 mJ
Peak forward surge current 8.3 ms single half sine-wave IFSM 150 A
superimposed on rated load (JEDEC Method)
Peak repetitive reverse current
at tp= 2.0 µs, 1 KHZIRRM 1.0 0.5 A
Peak non-repetitive reverse energy (8/20 µs wavefor m) ERSM 20 10 mJ
Electrostatic discharge capacitor voltage VC25 kV
Human body model: C = 100 pF, R = 1.5 k
Voltage rate of change (rated VR) dv/dt 10,000 V/µs
Operating junction temperature range TJ 65 to +175 °C
Storage temperature range TSTG 65 to +175 °C
RMS Isolation voltage (MBRF type only) from terminals 4500(1)
to heatsink with t = 1.0 second, RH 30% VISOL 3500(2) V
1500(3)
Electrical Characteristics(TC= 25°C unless otherwise noted)
Parameter Symbol MBR10H35, MBR10H45 MBR10H50, MBR10H60 Unit
Typ Max Typ Max
Maximum instantaneous at IF = 10 A TJ = 25 °C 0.63 0.71
forward voltage(4) at IF = 10 A TJ = 125 °C VF0.49 0.55 0.57 0.61 V
at IF = 20 A TJ = 25 °C 0.75 0.85
at IF = 20 A TJ =125 °C 0.62 0.68 0.68 0.71
Maximum instantaneous reverse current TJ = 25 °C 100 100 µA
at rated DC blocking voltage(4) TJ =125 °C IR4.0 12 2.0 12 mA
Thermal Characteristics(TC= 25 °C unless otherwise noted)
Parameter Symbol MBR MBRF MBRB Unit
Maximum thermal resistance RθJC 2.0 4.0 2.0 °C/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset (3) Screw mounting with 4-40 screw, where washer diameter is 4.9 mm (0.19”)
(2) Clip mounting (on case), where leads do overlap heatsink (4) Pulse test: 300 µs pulse width, 1% duty cycle
Ordering Information
Product Case Package Code Package Option
MBR10H35 – MBR10H60 TO-220AC 45 Anti-Static tube, 50/tube, 2K/carton
MBRF10H35 – MBRF10H60 ITO-220AC 45 Anti-Static tube, 50/tube, 2K/carton
31 13” reel, 800/reel, 4.8K/car ton
MBRB10H35 – MBRB10H60 TO-263AB 45 Anti-Static tube, 50/tube, 2K/carton
81 Anti-Static 13” reel, 800/reel, 4.8K/carton
MBR10Hxx, MBRF10Hxx & MBRB10Hxx Series
Vishay Semiconductors
for merly General Semiconductor
Document Number 88780 www.vishay.com
03-Mar-03 3
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
1 10 100
25
50
75
100
125
150
175
Fig. 3 – Typical Instantaneous
Forward Characteristics
Fig. 5 – Typical Junction
Capacitance Fig. 6 – Typical Transient
Thermal Impedance
Number of Cycles at 60 HZ
Reverse Voltage (V)
Peak Forward Surge Current (A)
0
5
10
15
025
50 75 100 125 150 175
Fig. 1 – Forward Current
Derating Curve
Average Forward Current (A)
Case Temperature (°C)
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current
0.01
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0
1.0
10
100
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
020 6040 10080
0.0001
0.001
0.1
0.01
1
10
100
Fig. 4 – Typical Reverse
Characteristics
Instantaneous Reverse Leakage Current
(mA)
Percent of Rated Peak Reverse Voltage (%)
t, Pulse Duration (sec.)
Transeint Thermal Impedance (°C/W)
pF - Junction Capacitance
0.01 1010.1
0.1
1
10
1100 100
1000
10000
100
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
MBR10H35 -- MBR10H45
MBR10H50 -- MBR10H60
MBR10H35 -- MBR10H45
MBR10H50 -- MBR10H60
TJ = 25°C
f = 1.0 MHZ
Vsig = 50mVp-p
TJ = 150°C
TJ = 150°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
MBR10H35 -- MBR10H45
MBR10H50 -- MBR10H60
MBRF
MBR, MBRB