DCR106-3
THRU
DCR106-8
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
VOLT AGE RANGE - 100 to 600 V olts
CURRENT - 4.0 Amperes
Description
* Driven directly with IC and MOS device
* Feature proprietary, void-free glass passivated chips
* Available in voltage ratings from 100 to 600 volts
* Sensitive gate trigger current
* Designed for high volume, line-powered control
application in relay lamp drivers, small motor controls,
gate drivers for large thyristors
Pinning
1 = Cathode, 2 = Anode, 3 = Gate
Characteristic Symbol Rating Unit
DCR106-3 100
Peak Repetitive Off-State DCR106-4 VDRM, 200 V
Voltage and Reverse Voltage DCR106-6 VRRM 400
DCR106-8 600
On-State RMS Current IT(RMS) 4.0 A
(TA=57oC, 180o Conduction Angles)
Peak Non-repetitive Surge Current ITSM 25 A
(1/2 Cycle, Sine Wave 60Hz)
Forward Peak Gate Current IGM 1.0 A
Forward Peak Gate Power Dissipation PGM 0.5 W
Forward Average Gate Power Dissipation PG(AV) 0.1 W
Operating Junction Temperature TJ -40 to +110 oC
Storage Temperature TSTG -40 to +150 oC
Absolute Maximum Ratings(TA=25oC)
TO-126
Dimensions in inches and (millimeters)
.055(1.39)
.045(1.14)
.032(0.81)
.028(0.71)
.052(1.32)
.048(1.22)
.620(15.75)
.600(15.25)
.279(7.09)
.275(6.99)
.041(1.05)
.037(0.95)
.022
(0.55)
.154(3.91)
.150(3.81)
Typ
3oTyp
3oTyp
.105(2.66)
.095(2.41)
.189(4.80)
.171(4.34)
.304(7.72)
.285(7.52)
3oTyp
3oTyp
.152(3.86)
.138(3.50)
1 2 3
Characteristic Symbol Min Typ Max Unit Test Conditions
Peak Repetitive Forward or Reverse TJ=25oC IDRM, IRRM - - 10 µA VAK=Rated VDRM or VRRM
Off-State Blocking Current TJ=110oC - - 200 RGK=1KΩ
Peak Forward On-State Voltage VTM - - 2.0 V ITM=4A Peak
Continuous DC Gate Trigger Current IGT - - 200 µA VAK=7V DC, RL=100Ω
Continuous DC Gate Trigger Voltage VGT - - 0.8 V VAK=7V DC, RL=100Ω
DC Holding Current IH GK=1KΩ
GK=1KΩ
Gate Controlled Turn-on Time(tD+tR) Tgt - 2.2 - µsec IGT=10mA
Thermal Resistance, Junction to Case RθJC - 3.0 - oC/W -
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
DC COMPONENTS CO., LTD.
Critical Rate-of-Rise of Off-State Voltage dv/dt - 8.0 - V/µS R
- - 5.0 mA R
