© Semiconductor Components Industries, LLC, 2012
April, 2018 − Rev. 2
1Publication Order Number:
NTTFS4C05N/D
NTTFS4C05N
Power MOSFET
30 V, 75 A, Single N−Channel, m8FL
Features
•Low RDS(on) to Minimize Conduction Losses
•Low Capacitance to Minimize Driver Losses
•Optimized Gate Charge to Minimize Switching Losses
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•DC−DC Converters
•Power Load Switch
•Notebook Battery Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 30 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain
Current RqJA (Note 1)
Steady
State
TA = 25°CID19.4 A
TA = 85°C 14.5
Power Dissipation RqJA
(Note 1)
TA = 25°C PD2.16 W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°CID28 A
TA = 85°C 21
Power Dissipation
RqJA ≤ 10 s (Note 1)
TA = 25°C PD4.5 W
Continuous Drain
Current RqJA (Note 2)
TA = 25°CID12.0 A
TA = 85°C 8.9
Power Dissipation
RqJA (Note 2)
TA = 25°C PD0.82 W
Continuous Drain
Current RqJC (Note 1)
TC = 25°CID75 A
TC = 85°C 56
Power Dissipation
RqJC (Note 1)
TC = 25°C PD33 W
Pulsed Drain Current TA = 25°C, tp = 10 msIDM 174 A
Operating Junction and Storage Temperature TJ,
Tstg
−55 to
+150
°C
Source Current (Body Diode) IS30 A
Drain to Source dV/dt dV/dt 6.0 V/ns
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 41 Apk,
L = 0.1 mH, RG = 25 W) (Note 3)
EAS 84 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 29 A, EAS = 42 mJ.
ORDERING INFORMATION
www.onsemi.com
Device Package Shipping†
V(BR)DSS RDS(on) MAX ID MAX
30 V
3.6 mW @ 10 V
75 A
N−Channel MOSFET
D (5−8)
S (1,2,3)
G (4)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
5.1 mW @ 4.5 V
NTTFS4C05NTAG WDFN8
(Pb−Free)
1500 / Tape &
Reel
(Note: Microdot may be in either location)
1
4C05 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
1
NTTFS4C05NTWG WDFN8
(Pb−Free)
5000 / Tape &
Reel
4C05
AYWWG
G
D
D
D
D
S
S
S
G
NTTFS4C05N
www.onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain) RqJC 3.8
°C/W
Junction−to−Ambient – Steady State (Note 4) RqJA 57.8
Junction−to−Ambient – Steady State (Note 5) RqJA 151.9
Junction−to−Ambient – (t ≤ 10 s) (Note 4) RqJA 27.6
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA30 V
Drain−to−Source Breakdown Voltage
(transient)
V(BR)DSSt VGS = 0 V, ID(aval) = 12.6 A,
Tcase = 25°C, ttransient = 100 ns
34 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
11.7 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 24 V
TJ = 25°C 1.0
mA
TJ = 125°C 10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.3 2.2 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ5.0 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 30 A 2.9 3.6
mW
VGS = 4.5 V ID = 30 A 4.1 5.1
Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 68 S
Gate Resistance RGTA = 25°C 1.0 W
CHARGES AND CAPACITANCES
Input Capacitance CISS
VGS = 0 V, f = 1 MHz, VDS = 15 V
1988
pF
Output Capacitance COSS 1224
Reverse Transfer Capacitance CRSS 71
Capacitance Ratio CRSS/CISS VGS = 0 V, VDS = 15 V, f = 1 MHz 0.036
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 15 V; ID = 30 A
14.5
nC
Threshold Gate Charge QG(TH) 2.9
Gate−to−Source Charge QGS 5.2
Gate−to−Drain Charge QGD 5.5
Gate Plateau Voltage VGP 3.1 V
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 31 nC
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time td(ON)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
11
ns
Rise Time tr30
Turn−Off Delay Time td(OFF) 20
Fall Time tf8.0
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
NTTFS4C05N
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter UnitMaxTypMinTest ConditionSymbol
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time td(ON)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
8.0
ns
Rise Time tr25
Turn−Off Delay Time td(OFF) 26
Fall Time tf5.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 10 A
TJ = 25°C 0.77 1.1
V
TJ = 125°C 0.62
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
42.4
ns
Charge Time ta21.1
Discharge Time tb21.3
Reverse Recovery Charge QRR 34.4 nC
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NTTFS4C05N
www.onsemi.com
4
TYPICAL CHARACTERISTICS
10 V
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
53210
0
20
40
60
30
70
4.03.53.02.01.51.0
Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
9.08.07.0 106.05.04.03.0
0.002
0.006
0.010
705030 604020
0.004
0.005
0.007
0.008
0.002
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
15012510075250−25−50
0.8
1.0
1.1
1.3
30252015105
10
100
1000
10000
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RES-
ISTANCE (NORMALIZED)
IDSS, LEAKAGE (nA)
90
10
4 V to 6.5 V
3.6 V
3.2 V
3.0 V
2.8 V
2.6 V
3.8 V
TJ = 25°CVDS = 5 V
TJ = 25°C
TJ = 125°C
TJ = −55°C
0.008
0.006
ID = 30 A
TJ = 25°C
VGS = 4.5 V
TJ = 25°C
VGS = 10 V
50
ID = 30 A
VGS = 10 V
VGS = 0 V
TJ = 85°C
TJ = 150°C
TJ = 125°C
2.5
0.004
0.014
0.012
1.2
1.4
0.7
1.5
50
0.016
80
10
3.4 V
110
120
140
100
130
4
0
20
40
60
30
70
90
10
50
80
110
120
140
100
130
4.50.50
0.020
0.024
0.022
0.018
0.028
0.026
0.003
1.6
1.7
0.9
NTTFS4C05N
www.onsemi.com
5
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
25201510 3050
0
250
1000
1250
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100101
1
10
100
1000
0.90.80.70.60.50.4
0
2
4
6
8
10
12
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C)
1001010.1
0.01
1
10
100
1000
150125100755025
0
5
20
30
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
IS, SOURCE CURRENT (A)
ID, DRAIN CURRENT (A)
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
VGS = 0 V
TJ = 25°C
Ciss
Coss
Crss
QT
Qgs Qgd
VDD = 15 V
ID = 15 A
VGS = 10 V td(off)
td(on)
tr
tf
TJ = 25°C
TJ = 125°C
VGS = 0 V
0 V < VGS < 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
100 ms
10 ms
1 ms
dc
ID = 29 A
1750
2500
10
15
25
45
500
750
1500
2000
2250
35
40
3000
2750
1.0
0
2
4
6
8
10
0 4 8 121620242832
TJ = 25°C
VDD = 15 V
VGS = 10 V
ID = 30 A
14
16
18
20
10 ms
0.01
0.1
NTTFS4C05N
www.onsemi.com
6
TYPICAL CHARACTERISTICS
Figure 13. Thermal Response
PULSE TIME (sec)
0.010.0010.00010.000010.000001
0.01
0.1
1
10
100
R(t) (°C/W)
0.1 1 10 100 1000
10%
Duty Cycle = 50%
20%
5%
2%
1%
Single Pulse
Figure 14. GFS vs. ID
ID (A)
4030100
0
20
100
GFS (S)
20 50
40
60 80
60
80
120
70
Figure 15. Avalanche Characteristics
PULSE WIDTH (SECONDS)
1.E−031.E−041.E−061.E−07
1
10
100
ID, DRAIN CURRENT (A)
1.E−05
TA = 25°C
TA = 85°C
NTTFS4C05N
www.onsemi.com
7
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
M1.40 1.50
q0 −−−
_
1.60
12
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
1234
56
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1 q
D
E
B
A
0.20 C
0.20 C
2X
2X
DIM MIN NOM
MILLIMETERS
A0.70 0.75
A1 0.00 −−−
b0.23 0.30
c0.15 0.20
D
D1 2.95 3.05
D2 1.98 2.11
E
E1 2.95 3.05
E2 1.47 1.60
e0.65 BSC
G0.30 0.41
K0.65 0.80
L0.30 0.43
L1 0.06 0.13
A
0.10 C
0.10 C
DETAIL A
14
8L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05 C
L
DETAIL A
A1
e
6X
c
4X
C
SEATING
PLANE
5
MAX
0.80
0.05
0.40
0.25
3.15
2.24
3.15
1.73
0.51
0.95
0.56
0.20
M
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.650.42
0.75 2.30
3.46
PACKAGE
8X
0.055 0.059
0 −−−
_
0.063
12
_
0.028 0.030
0.000 −−−
0.009 0.012
0.006 0.008
0.116 0.120
0.078 0.083
0.116 0.120
0.058 0.063
0.026 BSC
0.012 0.016
0.026 0.032
0.012 0.017
0.002 0.005
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.020
0.037
0.022
0.008
MIN NOM
INCHES
MAX
78
PITCH
3.60
0.57
0.47
OUTLINE
DIMENSION: MILLIMETERS
3.30 BSC
3.30 BSC
0.130 BSC
0.130 BSC
2.37
0.66
4X
E3 0.23 0.30 0.40 0.009 0.012 0.016
E3
4X
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
NTTFS4C05N/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
◊
