1
Dual IGBTMOD™
U-Series Module
800 Amperes/600 Volts
CM800DU-12H
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
1
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module con-
sists of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse-con-
nected super-fast recovery free-
wheel
diode. All components and inter-
connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ UPS
£ Welding Power Supplies
£ Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM800DU-12H is a
600V (VCES), 800 Ampere Dual
IGBTMOD™ Power Module.
Current Rating VCES
Type Amperes Volts (x 50)
CM 800 12
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 5.51 140.0
B 5.12 130.0
C 5.12 130.0
D 1.38 35.0
E 4.33 110.0
F 4.33 110.0
G 0.39 10.0
H 0.45 11.5
J 0.54 13.8
K 1.72 43.8
L 1.42 36.0
M 0.39 10.0
N 0.80 20.4
Dimensions Inches Millimeters
P 0.57 14.5
Q 1.57 40.0
R 2.56 65.0
S M8 M8
T 0.26 Dia. 6.5 Dia.
S 0.32 8.0
V 0.97 24.5
W M4 M4
X 0.59 15.0
Y 0.35 9.0
Z 1.02 26.0
AA 0.79 20.0
T - (4 TYP.)
C2E1
E2
G1
C1
E1
E2
G2
C
L
L
C
W -
(4 PLACES)
LABEL
A
FG
HJKL
M
N
P
Q
P
R
U
VD
X
Y
Z
C2E1 E2 C1
G1 E1 E2 G2
AA
TC MEASURED POINT
B
CE
S - (3 PLACES)
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CM800DU-12H
Dual IGBTMOD™ U-Series Module
800 Amperes/600 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM800DU-12H Units
Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC 800 Amperes
Peak Collector Current ICM 1600* Amperes
Emitter Current** (Tc = 25°C) IE 800 Amperes
Peak Emitter Current** IEM 1600* Amperes
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 1500 Watts
Mounting Torque, M8 Main Terminal – 95 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
G(E) Terminal, M4 – 15 in-lb
Weight – 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 2 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 80mA, VCE = 10V 4.5 6 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 800A, VGE = 15V, Tj = 25°C – 2.5 3.15 Volts
IC = 800A, VGE = 15V, Tj = 125°C – 2.75 – Volts
Total Gate Charge QG VCC = 300V, IC = 800A, VGE = 15V – 1600 – nC
Emitter-Collector Voltage** VEC IE = 800A, VGE = 0V – – 2.6 Volts
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies – – 70.4 nf
Output Capacitance Coes VCE = 10V, VGE = 0V – – 38.4 nf
Reverse Transfer Capacitance Cres – – 10.4 nf
Resistive Turn-on Delay Time td(on) VCC = 300V, IC = 800A, – – 400 ns
Load Rise Time tr VGE1 = VGE2 = 15V, – – 2000 ns
Switch Turn-off Delay Time td(off) RG = 3.1Ω, Resistive – – 500 ns
Times Fall Time tf Load Switching Operation – – 300 ns
Diode Reverse Recovery Time** trr IE = 800A, diE/dt = -1600A/μs – – 160 ns
Diode Reverse Recovery Charge** Qrr IE = 800A, diE/dt = -1600A/μs – 1.92 – µC
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module – – 0.083 °C/W
Thermal Resistance, Junction to Case Rth(j-c)R Per FWDi 1/2 Module – – 0.13 °C/W
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – 0.010 – °C/W
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3
CM800DU-12H
Dual IGBTMOD™ U-Series Module
800 Amperes/600 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
3
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0 2 4 6 8 10
1200
400
0
VGE = 20V
14
15
20
12
13
11
8
Tj = 25o
C
800
1600
10
9
GATE-EMITTER VOLTAGE, V
GE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
0 4 8 12 16 20
1600
1200
800
400
0
VCE = 10V
Tj = 25°C
Tj = 125°C
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0 400 800 1200 1600
4
3
2
1
0
VGE = 15V
Tj = 25°C
Tj = 125°C
GATE-EMITTER VOLTAGE, V
GE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0 4 8 12 16 20
8
6
4
2
0
Tj = 25°C
IC = 320A
IC = 1600A
IC = 800A
.5 1.0 1.5 2.0 3.02.5
101
102
103
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
104
EMITTER CURRENT, IE, (AMPERES)
Tj = 25°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, Cies, Coes, Cres, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1 100102
102
101
100
10-1
VGE = 0V
f = 1MHz
101
Coes
Cres
Cies
COLLECTOR CURRENT, IC, (AMPERES)
103
101102103
102
101
td(off)
td(on)
tr
VCC = 300V
VGE = ±15V
RG = 3.1 Ω
Tj = 125°C
tf
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT, I
E, (AMPERES)
REVERSE RECOVERY TIME, trr, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
101102103
102
101
t
rr
I
rr
di/dt = -1600A/µsec
T
j
= 25°C
10
2
101
100
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE CHARGE, VGE
20
0 500 15001000
16
12
8
4
025002000
V
CC = 300V
VCC = 200V
I
C
= 400A
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CM800DU-12H
Dual IGBTMOD™ U-Series Module
800 Amperes/600 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
4
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
101
10-5 10-4 10-3
100
10-1
10-2
10-3
10-3 10-2 10-1 100101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.063°C/W
Zth = Rth • (NORMALIZED VALUE)
10-1
10-2
10-3
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
1
10-5 10-4 10-3
100
10-1
10-2
10-3
10-3 10-2 10-1 100101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.13 °C/W
Zth = Rth • (NORMALIZED VALUE)
10-1
10-2
10-3
