SCF2N6800T2 JANTX2N6800 JANTXV2N6800 POWER MOSFET FOR RUGGED ENVIRONMENTS TO-205AF / TO-39 DESCRIPTION REF: MIL-PRF-19500/557 N-Channel 400 Volt < 1.0 Ohms 3 Amp SEMICOA's MOSFET technology is designed for rugged environments providing excellent long term reliability. SEMICOA's long heritage providing military grade technology and packaging allows these devices to be used for ground based telecommunications, vehicles, ships, weapon systems and other application where failure is not an option. FEATURES Available in JANTX and JANTXV equivalent levels RDS(ON) < 1000 m Simple Drive Requirements Low Gate Charge Ease of Paralleling Hermetically Sealed Die Available ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS lD @ VGS = 10 V, TC = 25 C Continuous Drain Current 3.0 lD @ VGS = 10 V, TC = 100 C Continuous Drain Current 2.0 IDM Pulsed Drain Current (1) 14 PD@ TC = 25 C Max Power Dissipation 25 W Linear Derating Factor 0.20 W/C VGS Gate to Source Voltage 20 V EAS Single Pulse Avalanche Energy (2) 0.51 mJ IAR Avalanche Current (1) - A TJ TSTG Operating Junction Storage Temperature Range -55 to 150 C 300 C O.98 typical g Lead Temperature Weight A For footnotes refer to the last page 333 McCormick Avenue Costa Mesa, CA 92626 714-979-1900 www.semicoa.com sales@semicoa.com Copyright 2012 Rev. 1 SCF2N6800T2 Electrical Characteristics @ TJ 25C (unless otherwise specific) PARAMETER MIN TYP MAX UNITS BVDSS Drain to Source Breakdown Voltage 400 - - V BVDSS/TJ Temperature Coefficient of Breakdown Voltage - 0.37 - V/C - - 1.00 - - 1.10 RDS(ON) Static Drain to Source On-State Resistance TEST CONDITIONS VGS = 0 V, ID = 1.0 mA Reference to 25 C, ID = 1.0 mA VGS = 10 V, ID = 2.0 A (4) VGS = 10 V, ID = 3.0 A (4) VGS(th) Gate Threshold Voltage 2.0 - 4.0 V gsf Forward Transconductance 2.0 - - S() IDSS Zero Gate Voltage Drain Current - - 25 - - 250 A VDS = VGS, ID = 250 A VDS = 15 V, IDS = 2.0 A (4) VDS = 320 V, VGS = 0V VDS = 320 V, VGS=0V, Tj = 125 C IGSSF Gate to Source Leakage Forward 100 nA VGS = 20 V IGSSR Gate to Source Leakage Reverse -100 nA VGS = -20 V Qg Total Gate Charge - - 34.75 Qgs Gate to Source Charge - - 5.75 nC VGS = 10 V, ID = 3.0 A , VDS = 200 V Qgd Gate to Drain (Miller) Charge - - 16.59 Td(on) Turn On Delay Time - - 30 Tr Rise Time - - 35 Td(off) Turn Off Delay Time - - 55 ns VDD = 200 V, ID = 3.0 A, RG = 7.5 Tf Fall time - - 35 CISS Input Capacitance - - - COSS Output Capacitance - - - pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz CRSS Reverse Transfer Capacitance - - - Source-Drain Diode Rating and Characteristics PARMETER MIN TYP MAX UNITS Continuous Source Current (Body Diode) - - 3.0 A ISM Pulse Source Current (Body Diode) - - 14 A VSD Diode Forward Voltage - - 1.4 V Ti = 25 C, IF = 3.0 A, VGS = 0 V (4) - - 700 nS Ti = 25 C, IF = 3.0 A, di/dt 100 A/ S, VDD 50 V (4) IS Trr Reverse Recovery Time TEST CONDITIONS For Footnotes refer to the last page 333 McCormick Avenue Costa Mesa, CA 92626 714-979-1900 www.semicoa.com sales@semicoa.com Copyright 2012 Rev. 1 SCF2N6800T2 TO-205 AF Case Outline and Dimensions Dimensions Symbol Inches Min Max Min Max CD .305 .335 7.75 8.51 CH .160 .180 4.07 4.57 HD .335 .370 8.51 9.40 LC .200 typ .016 .021 0.41 0.53 LL .500 .750 12.70 19.05 LU .016 .019 0.41 0.48 .050 Source Lead 2 Gate Lead 3 Drain 1.27 L2 .250 6.35 P .100 2.54 Q Lead 1 5.08 typ LD L1 Pin Assignment Millimeters .050 1.27 TL .029 .045 0.74 1.14 TW .028 .034 0.71 0.86 r .010 45 TP 0.25 45 TP Footnotes: 1. 2. 3. 4. Repetitive Rating: Pulse width limited by maximum junction temperature. VDD = 50 V starting TJ = 25 C, Peak IL = 3.0A ISD 3.0A, di/dt 90 A/S, VDD 400 V, Tj 150C, Rg = 7.5 Pulse width 300s; Duty Cycle 2% Visit us at www.semicoa.com for sales and contact information. Data and specification subject to change without notice. 333 McCormick Avenue Costa Mesa, CA 92626 714-979-1900 www.semicoa.com sales@semicoa.com Copyright 2012 Rev. 1