BCW 67, BCW 68 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage PNP PNP Power dissipation - Verlustleistung Plastic case Kunststoffgehause 1.1 2.9 0.1 0.4 1.3 0.1 2.5 max 3 Type Code 2 1 250 mW 1.9 Dimensions / Mae in mm 1=B 2=E 3=C SOT-23 (TO-236) Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BCW 67 BCW 68 Collector-Emitter-voltage B open - VCE0 32 V 45 V Collector-Base-voltage E open - VCB0 45 V 60 V Emitter-Base-voltage C open - VEB0 5V Power dissipation - Verlustleistung Ptot 250 mW 1) Collector current - Kollektorstrom (DC) - IC 800 mA Peak Collector current - Kollektor-Spitzenstrom - ICM 1000 mA Base current - Basis-Spitzenstrom - IB 100 mA Peak Base current - Basis-Spitzenstrom - IBM 200 mA Junction temperature - Sperrschichttemperatur Tj 150/C Storage temperature - Lagerungstemperatur TS - 65...+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. - ICB0 - - 20 nA - ICB0 - - 20 :A - ICB0 - - 20 nA - ICB0 - - 20 :A - IEB0 - - 20 nA Collector-Base cutoff current - Kollektorreststrom IE = 0, - VCB = 32 V IE = 0, - VCB = 32 V, Tj = 150/C IE = 0, - VCB = 45 V IE = 0, - VCB = 45 V, Tj = 150/C BCW 67 BCW 68 Emitter-Base cutoff current - Emitterreststrom IC = 0, - VEB = 4 V 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 44 01.11.2003 General Purpose Transistors BCW 67, BCW 68 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector saturation volt. - Kollektor-Sattigungsspg. 1) - IC = 100 mA, - IB = 10 mA - VCEsat - - 300 mV - IC = 500 mA, - IB = 50 mA - VCEsat - - 700 mV Base saturation voltage - Basis-Sattigungsspannung 1) - IC = 100 mA, - IB = 10 mA - VBEsat - - 1.25 V - IC = 500 mA, - IB = 50 mA - VBEsat - - 2V DC current gain - Kollektor-Basis-Stromverhaltnis 1) - VCE = 10 V - IC = 100 : mA - VCE = 1 V - IC = 10 mA - VCE = 1 V - IC = 100 mA - VCE = 2 V - IC = 500 mA BCW 67A / 68F hFE 35 - - BCW 67B / 68G hFE 50 - - BCW 67C / 68H hFE 80 - - BCW 67A / 68F hFE 75 - - BCW 67B / 68G hFE 120 - - BCW 67C / 68H hFE 180 - - BCW 67A / 68F hFE 100 160 250 BCW 67B / 68G hFE 160 250 400 BCW 67C / 68H hFE 250 350 630 BCW 67A / 68F hFE 35 - - BCW 67B / 68G hFE 60 - - BCW 67C / 68H hFE 100 - - fT - 200 MHz - - 6 pF - - 60 pF - Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 50 mA, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 Emitter-Base Capacitance - Emitter-Basis-Kapazitat - VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEB0 Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN-transistors Empfohlene komplementare NPN-Transistoren Marking - Stempelung 420 K/W 2) RthA BCW 65, BCW 66 BCW 67A = DA BCW 67B = DB BCW 67C = DC BCW 68F = DF BCW 68G = DG BCW 68H = DH ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 45