© 2017 IXYS CORPORATION, All Rights Reserved DS99865D(8/17)
IXTY08N100P
IXTA08N100P
IXTP08N100P
VDSS = 1000V
ID25 = 0.8A
RDS(on)
20
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 1000 V
VGS(th) VDS = VGS, ID = 50μA 2.0 4.0 V
IGSS VGS = 20V, VDS = 0V 50 nA
IDSS VDS = VDSS, VGS = 0V 3 A
TJ = 125C 100 A
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 17 20
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 1000 V
VDGR TJ= 25C to 150C, RGS = 1M1000 V
VGSS Continuous 20 V
VGSM Transient 30 V
ID25 TC= 25C 0.8 A
IDM TC= 25C, Pulse Width Limited by TJM 1.5 A
IATC= 25C 0.8 A
EAS TC= 25C80mJ
dv/dt IS IDM, VDD VDSS, TJ 150°C 10 V/ns
PDTC= 25C42W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
FCMounting Force (TO-263) 10..65 / 2.2..14.6 N/lb
MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in
Weight TO-252 0.35 g
TO-263 2.50 g
TO-220 3.00 g
Features
International Standard Packages
Low QG
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
DC-DC Converters
Switch-Mode and Resonant-Mode
Power Supplies
AC and DC Motor Drives
Lasers Driverserators
Robotics and Servo Controls
PolarTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
G = Gate D = Drain
S = Source Tab = Drain
GDS
TO-220 (IXTP)
D (Tab)
TO-252 (IXTY)
G
S
TO-263 (IXTA)
G
D (Tab)
S
D (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY08N100P IXTA08N100P
IXTP08N100P
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
gfs VDS = 30V, ID = 0.5 • ID25, Note 1 0.35 0.60 S
Ciss 240 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 18 pF
Crss 3.6 pF
Qg(on) 11.3 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 1.7 nC
Qgd 6.7 nC
td(on) 19 ns
tr 37 ns
td(off) 35 ns
tf 34 ns
RthJC 3.0 C/W
RthCS TO-220 0.50 C/W
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 50 (External)
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
ISVGS = 0V 0.8 A
ISM Repetitive, Pulse Width Limited by TJM 2.4 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 750 ns
IF = 0.8A, -di/dt = 100A/μs, VR = 100V
© 2017 IXYS CORPORATION, All Rights Reserved
IXTY08N100P IXTA08N100P
IXTP08N100P
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 2 4 6 8 1012141618
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
5V
6V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0 5 10 15 20 25 30 35
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
5V
Fig. 3. Output Characteristics @ T
J
= 125
o
C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 5 10 15 20 25 30 35 40
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
5V
6V
Fig. 4. R
DS(on)
Normalized to I
D
= 0.4A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 0.8A
I
D
= 0.4A
Fig. 5. R
DS(on)
Normalized to I
D
= 0.4A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 6. Maximum Drain Current vs. Case Temperature
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY08N100P IXTA08N100P
IXTP08N100P
Fig. 7. Input Admittance
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
3.03.54.04.55.05.56.06.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
V
DS
= 30V
Fig. 8. Transconductance
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40
o
C
125
o
C
25
o
C
V
DS
= 30V
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0.0
0.4
0.8
1.2
1.6
2.0
2.4
0.4 0.5 0.6 0.7 0.8 0.9
V
SD
- Volts
I
S
- Amperes
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0123456789101112
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 500V
I
D
= 0.4A
I
G
= 1mA
Fig. 11. Capacitance
1
10
100
1,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1MHz
Ciss
Crss
Coss
Fig. 12. Maximum Transient Thermal Impedance
0.1
1
10
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
© 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: T_08N100P(1A-444) 4-02-08
IXTY08N100P IXTA08N100P
IXTP08N100P
TO-220 Outline
1 - Gate
2,4 - Drain
3 - Source
E1
E A
D1
D
Q
L1
oP
H1
A1
L
A2
D2
e c
e1
e1 3X b2
e 3X b
EJECTOR
PIN
TO-252 AA Outline
1 - Gate
2,4 - Drain
3 - Source
L1
b2
e1
L4
E A
c2
H
A1
A2
L2
L
A
e c
0
e1 e1 e1 e1 e1
OPTIONAL 5.55MIN
1.25MIN
6.50MIN
2.28
6.40
BOTTOM
VIEW
2.85MIN
LAND PATTERN RECOMMENDATION
4
1 2 3
4
L3
b3
TO-263 Outline
1 - Gate
2,4 - Drain
3 - Source
C2
A
H
1
b
D
E
D1
E1
b2
L2
L1
23
4
L3
A2
A1
e
ce
0
0.43 [11.0]
0.66 [16.6]
0.06 [1.6]
0.10 [2.5]
0.20 [5.0]
0.34 [8.7]
0.12 [3.0]
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