MLO 75 MMO 75 AC Controller Modules VRSM VRRM VDSM VDRM V V 1200 1200 1600 1600 IRMS = 86 A VRRM = 1200-1600 V MLO Type MMO MLO 75-12io1 MLO 75-16io1 IRMS ITRMS ITAVM TK = 85C, 50 - 400 Hz (for single controller) TVJ = TVJM TK = 85C; (180 sine) ITSM TVJ = 45C; VR = 0 PGM K1 MMO 75-12io1 MMO 75-16io1 Test Conditions (dv/dt)cr G1 G2 Symbol (di/dt)cr K2 G1 K1 G1 K1 K2 I2t MMO 75 K2 G2 Maximum Ratings 86 62 39 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1150 1230 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1000 1100 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 6600 6280 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 5000 5020 A2s A2s TVJ = TVJM repetitive, IT = 150 A f =50 Hz, tP =200 ms VD = 2/3 VDRM IG = 0.45 A non repetitive, IT = ITAVM diG/dt = 0.45 A/ms 100 A/ms 500 A/ms 1000 V/ms Features Thyristor controller for AC (circuit W1C acc. to IEC) for mains frequency Direct copper bonded Al2O3 -ceramic base plate Isolation voltage 3600 V~ Planar passivated chips UL registered, E 72873 Long wire leads suitable for PC board soldering Applications Switching and control of single and three phase AC Softstart AC motor controller Solid state switches Light and temperature control TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM K1 = Cathode 1, G1 = Gate 1 K2 = Cathode 2, G2 = Gate 2 (MLO 36 has no G2 lead) tp = 30 ms tp = 300 ms PGAVM 10 5 0.5 W W W VRGM 10 V TVJ TVJM Tstg -40...+125 125 -40...+125 C C C 3000 3600 V~ V~ Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling High power density VISOL 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Md Mounting torque (M3) (UNF 4-32) Weight typ. 0.7 0.1 6 0.9 15 Nm lb.in. g Data according to IEC 60747 and to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 1-3 MLO 75 MMO 75 Symbol Test Conditions Characteristic Values IR, ID TVJ = TVJM; VR = VRRM; VD = VDRM 5 VT IT 1.4 V VT0 rT For power-loss calculations only 0.85 5.0 V mW VGT VD = 6 V; 1.5 1.6 150 200 V V mA mA = 100 A; TVJ = 25C TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C IGT VD = 6 V; IGM tp = 50 ms, f = 60 Hz, IT = ITAVM VGD IGD TVJ = TVJM; IL 6 mA 0.25 5 V mA TVJ = 25C; tP = 10 ms, VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/ms 300 mA IH TVJ = 25C; VD = 6 V; RGK = 100 mA tgd TVJ = 25C; VD = 1/2 VDRM IG = 0.45 A; diG/dt = 0.45 A/ms 2 ms TVJ = TVJM; IT = 50 A, tP = 200 ms; -di/dt = 10 A/ms VR = 100 V; dv/dt = 15 V/ms; VD = 2/3 VDRM typ. tq RthJC RthJK dS dA a per per per per 1: IGT, TVJ = 125C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C V VG 2 5 Creeping distance on surface Creepage distance in air Max. allowable acceleration 150 6 1 4 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W IGD, TVJ = 125C 0.1 1 10 100 1000 IG ms 0.55 0.275 0.75 0.375 K/W K/W K/W K/W 4.5 4.5 50 mm mm m/s2 mA Fig. 1 Gate trigger characteristics 1000 thyristor/diode; DC current module thyristor/diode; DC current module TVJ = 25C s tgd 100 typ. Limit 10 1 10 Dimensions in mm (1 mm = 0.0394") MLO 75 3 1 A VD = 2/3 VDRM 10 100 mA 1000 IG MMO 75 Fig. 2 Gate trigger delay time 300 TVJ = 125C A TK = 85C 250 IRMS 200 150 100 50 0 0.01 MMO 75 MLO 75 0.1 s 1 10 t Fig. 3 Rated RMS current versus time (360 conduction) (c) 2000 IXYS All rights reserved 2-3 MLO 75 MMO 75 1000 110 W 100 90 Ptot 50 Hz 80 % VRRM A 800 RthKA K/W 80 ITSM 0.3 0.9 1.2 1.5 3 6 70 60 50 600 TVJ = 45C 400 40 TVJ = 125C 30 Circuit W1 1 x MMO 75 1 x MLO 75 20 10 200 0 0 0 20 40 60 80 A 0 25 50 75 IRMS 1 125 C 150 100 TA 10 ms 1000 100 t Fig. 5 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 4 Load current capability for single phase AC controller 10000 330 W 300 VR = 0V 270 Ptot 240 A2s TVJ = 45C RthKA K/W I2t 0.1 0.3 0.4 0.5 1 2 210 180 150 TVJ = 125C 300 120 200 90 Circuit W3 3 x MMO 75 3 x MLO 75 60 30 1000 0 0 20 40 60 80 A 0 25 50 IRMS 75 100 TA t Fig. 6 Load current capability for three phase AC controller: 3xMMO 75/MLO 75 Fig. 7 I2t versus time (1-10 ms) 1.0 K/W 0.8 ZthJK ms 10 1 125 C 150 70 Constants for ZthJK calculation: Rthi / (K/W) ti / (s) 0.6 0.019 0.034 0.498 0.2 0.004 0.02 0.16 0.68 ITAVM 60 DC 180 sin 120 60 30 50 40 RthJK for various conduction angles d: 0.4 RthJK / (K/W) d: 0.751 0.792 0.813 0.841 0.86 DC 180 120 60 30 0.2 0.0 0.001 A 30 60 120 180 DC 30 20 10 0 0.01 0.1 1 10 s t Fig. 8 Transient thermal impedance junction to heatsink (per thyristor or diode) (c) 2000 IXYS All rights reserved 100 0 25 50 75 100 125 C TK Fig. 9 Maximum on-state current versus heatsink temperature 3-3