DSP45-12A VRRM = 1200 V I FAV = 2x 45 A VF = 1.23 V Standard Rectifier Phase leg Part number 1 2 3 DSP45-12A Backside: cathode Features / Advantages: Applications: Package: Planar passivated chips Very low leakage current Very low forward voltage drop Improved thermal behaviour Diode for main rectification For single and three phase bridge configurations Housing: TO-247 Symbol Definition Conditions VRRM max. repetitive reverse voltage IR reverse current rIndustry standard outline rEpoxy meets UL 94V-0 rRoHS compliant Ratings VF IFAV forward voltage average forward current VF0 threshold voltage rF slope resistance RthJC thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current min. VR = 1200 V 20 A VR = 1200 V TVJ = 150 C 3 mA IF = 45 A TVJ = 25 C IF = 90 A IF = 45 A IF = 90 A rectangular TVJ = 150 C d = 0.5 for power loss calculation only t = 10 ms (50 Hz), sine (60 Hz), sine junction capacitance IXYS reserves the right to change limits, conditions and dimensions. 1.28 V 1.37 V V 1.35 V TC = 130C 45 A TVJ = 175C 0.81 V 9.1 m 0.55 K/W 175 C TC = 25 C 270 W TVJ = 45C 480 A VR = 0 V 518 A TVJ = 150C 408 A 441 A t = 10 ms (50 Hz), sine TVJ = 45C 1152 A2 s t = 8,3 ms (60 Hz), sine VR = 0 V 1120 A2 s t = 10 ms (50 Hz), sine TVJ = 150C 832 A2 s t = 8,3 ms (60 Hz), sine VR = 0 V 808 A2 s VR = 400 V; f = 1 MHz TVJ = 25 C t = 8,3 ms CJ V 1.23 -40 t = 10 ms (50 Hz), sine value for fusing Unit max. 1200 t = 8,3 ms I 2t typ. TVJ = 25 C TVJ = 25 C (60 Hz), sine VR = 0 V Data according to IEC 60747and per diode unless otherwise specified (c) 2009 IXYS all rights reserved http://store.iiic.cc/ 18 pF 20090528a DSP45-12A Ratings Symbol Definition Conditions I RMS RMS current per pin R thCH thermal resistance case to heatsink Tstg storage temperature min. max. Unit 70 0.25 -55 Weight A K/W 150 C 6 MD mounting torque FC mounting force with clip 1) typ. 1) g 0.8 1.2 Nm 20 120 N IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Product Marking Logo Marking on product DateCode Assembly Code Ordering Standard abcdef YYWW XXXXXX Part Name DSP45-12A Similar Part DSP45-16A DSP45-16AR IXYS reserves the right to change limits, conditions and dimensions. Marking on Product DSP45-12A Package TO-247AD (3) ISOPLUS247 (3) Delivering Mode Tube Base Qty Code Key 30 480673 Voltage class 1600 1600 Data according to IEC 60747and per diode unless otherwise specified (c) 2009 IXYS all rights reserved http://store.iiic.cc/ 20090528a DSP45-12A Outlines TO-247 IXYS reserves the right to change limits, conditions and dimensions. Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 OP Q S b b2 b4 c D1 D2 E1 O P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 Data according to IEC 60747and per diode unless otherwise specified (c) 2009 IXYS all rights reserved http://store.iiic.cc/ 20090528a DSP45-12A 80 104 300 VR = 0 V 50 Hz, 80% VRRM 70 60 200 50 IF [A] TVJ = 45C TVJ = 45C IFSM 40 103 [A] 30 TVJ = 150C TVJ = 25C 20 2 It 100 [A2s] TVJ = 150C TVJ = 150C 10 0 0.0 0.5 1.0 VF [V] 1.5 102 0 0.001 2.0 0.01 0.1 1 1 Fig. 1 Forward current versus voltage drop per diode 3 4 5 6 7 8 910 t [ms] 2 Fig. 2 Surge overload current Fig. 3 I t versus time per diode 80 180 160 RthJA: 140 0.5 1.8 3 5 8 15 120 Ptot [W] 2 t [s] 100 80 KW KW KW KW KW KW 60 IdAVM [A] 40 60 20 40 20 0 0 0 10 20 30 40 50 0 40 80 IdAVM [A] 120 160 0 40 Tamb [C] 80 120 160 200 TC [C] Fig. 4 Power dissipation vs. direct output current & ambient temperature, sine 180 Fig. 5 Max. forward current versus case temperature, sine180 0.6 0.4 3 Ri 0.033 0.095 0.164 4 0.258 Zth i [K/W] 1 2 0.2 0.0 0.001 0.01 0.1 1 i 0.0006 0.0039 0.033 0.272 10 t [s] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per diode unless otherwise specified (c) 2009 IXYS all rights reserved http://store.iiic.cc/ 20090528a