1N5820-G Thru. 1N5822-G
Forward Current: 3.0A
Reverse Voltage: 20 to 40V
RoHS Device
Schottky Barrier RectifierSchottky Barrier Rectifier
QW-BB016 Page 1
REV:A
SMD Diodes Specialist
Features
-Fast switching.
-Low forward voltage, high current capability.
-Low power loss, high efficiency.
-High current surge capability.
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-High temperature soldering guaranteed: 250 C/10
seconds, 0.375”(9.5mm) lead length at 5lbs.
(2.3kg) tension.
Mechanical data
-Case: Transfer molded plastic
-Epoxy: UL94V-0 rate flame retardant
-Polarity: Color band denotes cathode end
-Lead: Plated axial lead, solderable per MIL-STD-
202E method 208C
Mounting position: Any
-Weight: 0.042 ounces, 1.19gram
Dimensions in inches and (millimeter)
DO-27
1.0(25.4)
MIN.
0.375(9.5)
0.335(8.5)
0.220(5.6)
0.197(5.0)
0.052(1.3)
0.048(1.2)
1.0(25.4)
MIN.
Maximum Ratings and Electrical Characteristics
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Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Parameter Symbol Unit
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
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0.375"(9.5mm) lead length @TL=95 C
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum forward voltage at 3.0A
9.4A
Maximum reverse current
*1
at rated DC blocking voltage TA=100
Operating temperature range
Storage temperature range
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TA=25 C
OC
*2
Typical junction capacitance
*3
Typical thermal resistance
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
CJ
RθJA
TJ
TSTG
V
V
V
A
A
V
pF
OC
OC
mA
OC/W
1N5820-G
20
14
20
NOTES:
1. Pulse test: 300μs pulse width, 1% duty cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0Volts.
2. Thermal resistance from junction to ambient, P.C.B. Mounted with 0.375"(9.5mm) lead length
with 2.5”×2.5”(63.5×63.5mm) copper pads.
1N5821-G
30
21
30
3.0
80
2.0
20
250
40
-55 to +125
-55 to +125
1N5822-G
40
28
40
0.475
0.850
0.500
0.900
0.525
0.950