© 2004 IXYS All rights reserved 98718B(02/04)
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ500 V
VGS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C21A
IDM TC= 25°C, pulse width limited by TJM 84 A
IAR TC= 25°C21A
EAR TC= 25°C 30mJ
EAS 1.5 mJ
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 15 V/ns
TJ ≤ 150°C, RG = 2 Ω
PDTC= 25°C 280 W
TJ-55 to +150 °C
TJM 150 °C
Tstg -55 to +150 °C
TL1.6 mm (0.063 in) from case for 10 s 300 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Features
lIXYS advanced low Qg process
lLow gate charge and capacitances
- easier to drive
- faster switching
lInternational standard packages
lLow RDS (on)
lRated for unclamped Inductive load
switching (UIS) rated
lMolding epoxies meet UL 94 V-0
flammability classification
Advantages
lEasy to mount
lSpace savings
lHigh power density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 250 µA 500 V
VGS(th) VDS = VGS, ID = 4 mA 2.5 4.5 V
IGSS VGS = ±30 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS TJ = 25°C25µA
VGS = 0 V TJ = 125°C1mA
RDS(on) VGS = 10 V, ID = 0.5 ID25 0.25 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-247 AD (IXFH)
G = Gate D = Drain
S = Source TAB = Drain
HiPerFETTM
Power MOSFETs
Q-Class
TO-268 (D3) ( IXFT)
(TAB)
G
S
VDSS = 500 V
ID25 = 21 A
RDS(on) = 0.25 ΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 250 ns
IXFH 21N50Q
IXFT 21N50Q
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 21N50Q
IXFT 21N50Q
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 20 V; ID = 0.5 • ID25, pulse test 14 21 S
Ciss 3000 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 420 pF
Crss 110 pF
td(on) 25 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 28 ns
td(off) RG= 2.0 Ω (External), 51 ns
tf12 ns
Qg(on) 84 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 20 nC
Qgd 35 nC
RthJC 0.45 K/W
RthCK (TO-247) 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 21 A
ISM Repetitive; pulse width limited by TJM 84 A
VSD IF = IS, VGS = 0 V, 1.3 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr 250 ns
QRM IF = IS, -di/dt = 100 A/µs, VR = 100 V 0.85 µC
IRM 8A
TO-268 Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-247 AD (IXFH) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
© 2004 IXYS All rights reserved 98718B(02/04)
IXFH 21N50Q
IXFT 21N50Q
Fig. 2. Extended Output Characteristics
@ 25
º
C
0
5
10
15
20
25
30
35
40
45
50
55
60
0 3 6 9 12 15 18 21 24 27 30
V
D S
- Volts
I
D
- Amperes
VGS
= 10V
8V
7V
5.5V
5V
6.5V
6V
Fig. 3. Output Characteristics
@ 125
º
C
0
2
4
6
8
10
12
14
16
18
20
22
0 2 4 6 8 10 12 14
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
5V
4.5V
5.5V
Fig. 1. Output Characteristics
@ 25
º
C
0
2
4
6
8
10
12
14
16
18
20
22
0123456
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
4.5V
5.5V
6V
Fig. 4. R
DS(on
) Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
D S ( o n )
- Normalize
d
I
D
= 21A
I
D
= 10.5A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Temperature
0
3
6
9
12
15
18
21
24
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
0 5 10 15 20 25 30 35 40 45 50 55 60
I
D
- Amperes
R
D S ( o n )
- Normalize
d
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 10V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 21N50Q
IXFT 21N50Q
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
Fig. 11. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - picoFarads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 1020 30405060 708090
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 250V
I
D
= 10.5A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
5
10
15
20
25
30
35
3.5 4 4.5 5 5.5 6 6.5
V
G S
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
-40ºC
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
40
0 5 10 15 20 25 30 35 40
I
D
- Amperes
g
f s
- Siemens
T
J
= -40ºC
25ºC
125ºC
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
10
20
30
40
50
60
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
V
S D
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 12. Maxim um Transient Therm al
Resistance
0.01
0.10
1.00
1 10 100 1000
Pulse Width - milliseconds
R
( t h ) J C
-
ºC / W
