General Description
The MAX3372E–MAX3379E and MAX3390E–MAX3393E
±15kV ESD-protected level translators provide the level
shifting necessary to allow data transfer in a multivoltage
system. Externally applied voltages, VCC and VL, set the
logic levels on either side of the device. A low-voltage
logic signal present on the VLside of the device appears
as a high-voltage logic signal on the VCC side of the
device, and vice-versa. The MAX3374E/MAX3375E/
MAX3376E/MAX3379E and MAX3390E–MAX3393E unidi-
rectional level translators level shift data in one direction
(VL→VCC or VCC →VL) on any single data line. The
MAX3372E/MAX3373E and MAX3377E/MAX3378E bidi-
rectional level translators utilize a transmission-gate-
based design (Figure 2) to allow data translation in either
direction (VL↔VCC) on any single data line. The
MAX3372E–MAX3379E and MAX3390E–MAX3393E
accept VLfrom +1.2V to +5.5V and VCC from +1.65V to
+5.5V, making them ideal for data transfer between low-
voltage ASICs/PLDs and higher voltage systems.
All devices in the MAX3372E–MAX3379E, MAX3390E–
MAX3393E family feature a three-state output mode that
reduces supply current to less than 1µA, thermal short-
circuit protection, and ±15kV ESD protection on the VCC
side for greater protection in applications that route sig-
nals externally. The MAX3372E/MAX3377E operate at a
guaranteed data rate of 230kbps. Slew-rate limiting
reduces EMI emissions in all 230kbps devices. The
MAX3373E–MAX3376E/MAX3378E/MAX3379E and
MAX3390E–MAX3393E operate at a guaranteed data rate
of 8Mbps over the entire specified operating voltage
range. Within specific voltage domains, higher data rates
are possible. (See the
Timing Characteristics
table.)
The MAX3372E–MAX3376E are dual level shifters
available in 3 x 3 UCSP™, 8-pin TDFN, and 8-pin
SOT23-8 packages. The MAX3377E/MAX3378E/
MAX3379E and MAX3390E–MAX3393E are quad level
shifters available in 3 x 4 UCSP, 14-pin TDFN, and 14-
pin TSSOP packages.
________________________Applications
SPI, MICROWIRE®, and I2C Level
Translation
Low-Voltage ASIC Level Translation
Smart Card Readers
Cell-Phone Cradles
Portable POS Systems
Portable Communication Devices
Low-Cost Serial Interfaces
Cell Phones
GPS
Telecommunications Equipment
Features
oGuaranteed Data Rate Options
230kbps
8Mbps (+1.2V ≤VL≤VCC ≤+5.5V)
10Mbps (+1.2V ≤VL≤VCC ≤+3.3V)
16Mbps (+1.8V ≤VL≤VCC ≤+2.5V and
+2.5V ≤VL≤VCC +3.3V)
oBidirectional Level Translation
(MAX3372E/MAX3373E and
MAX3377E/MAX3378E)
oOperation Down to +1.2V on VL
o±15kV ESD Protection on I/O VCC Lines
oUltra-Low 1µA Supply Current in Three-State
Output Mode
oLow-Quiescent Current (130µA typ)
oUCSP, TDFN, SOT23, and TSSOP Packages
oThermal Short-Circuit Protection
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
14
13
12
11
10
9
8
1
2
3
4
5
6
7
VCC
I/0 VCC1
I/0 VCC2
N.C.N.C.
I/O VL2
I/O VL1
MAX3377E/
MAX3378E
VL
I/0 VCC3
GND
I/O VL4
I/O VL3
TDFN-14
(3mm x 3mm)
THREE-STATE
I/0 VCC4
TOP VIEW
+
Pin Configurations
19-2328; Rev 3; 1/13
For pricing, delivery, and ordering information, please contact Maxim Direct
at 1-888-629-4642, or visit Maxim’s website at www.maximintegrated.com.
MAX3372E–MAX3379E/
MAX3390E–MAX3393E
Ordering Information
UCSP is a trademark of Maxim Integrated Products, Inc.
MICROWIRE is a registered trademark of National
Semiconductor Corp.
Ordering Information continued at end of data sheet.
Selector Guide appears at end of data sheet.
Pin Configurations continued at end of data sheet.
PART TEMP RANGE PIN-
PACKAGE
MAX3372EEKA+T -40°C to +85°C 8 SOT23
+
Denotes a lead-free package.
T = Tape and reel.
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
2Maxim Integrated
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(VCC = +1.65V to +5.5V, VL= +1.2V to (VCC + 0.3V), GND = 0, I/O VL_ and I/O VCC_ unconnected, TA= TMIN to TMAX, unless other-
wise noted. Typical values are at VCC = +3.3V, VL= +1.8V, TA= +25°C.) (Notes 1, 2)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
(All voltages referenced to GND.)
VCC ...........................................................................-0.3V to +6V
I/O VCC_......................................................-0.3V to (VCC + 0.3V)
I/O VL_ ...........................................................-0.3V to (VL+ 0.3V)
THREE-STATE...............................................-0.3V to (VL+ 0.3V)
Short-Circuit Duration I/O VL, I/O VCC to GND...........Continuous
Short-Circuit Duration I/O VLor I/O VCC to GND
Driven from 40mA Source
(except MAX3372E and MAX3377E) .....................Continuous
Continuous Power Dissipation (TA= +70°C)
8-Pin SOT23 (derate 5.6mW/°C above +70°C)........444.4mW
8-Pin TDFN (derate 18.5mW/°C above +70°C) ........1482mW
3 x 3 UCSP (derate 4.7mW/°C above +70°C) ............379mW
3 x 4 UCSP (derate 6.5mW/°C above +70°C) ............520mW
14-Pin TSSOP (derate 9.1mW/°C above +70°C) ........727mW
14-Pin TDFN (derate 18.5mW/°C above +70°C) ......1482mW
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
POWER SUPPLIES
VL Supply Range VL1.2 5.5 V
VCC Supply Range VCC 1.65 5.50 V
Supply Current from VCC IQVCC 130 300 µA
Supply Current from VLIQVL16 100 µA
VCC Three-State Output Mode
Supply Current ITHREE-STATE-VCC TA = +25°C, THREE-STATE = GND 0.03 1 µA
VL Three-State Output Mode
Supply Current ITHREE-STATE-VL TA = +25°C, THREE-STATE = GND 0.03 1 µA
Three-State Output Mode
Leakage Current
I/O VL_ and I/O VCC_
ITHREE-STATE-LKG TA = +25°C, THREE-STATE = GND 0.02 1 µA
THREE-STATE P in Inp ut Leakag eT
A = +25°C 0.02 1 µA
ESD PROTECTION
IEC 1000-4-2 Air-Gap Discharge ±8
IEC 1000-4-2 Contact Discharge ±8I/O VCC (Note 3)
Human Body Model ±15
kV
LOGIC-LEVEL THRESHOLDS (MAX3372E/MAX3377E)
I/O VL_ Input-Voltage High VIHL VL - 0.2 V
I/O VL_ Input-Voltage Low VILL 0.15 V
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
3
Maxim Integrated
ELECTRICAL CHARACTERISTICS (continued)
(VCC = +1.65V to +5.5V, VL= +1.2V to (VCC + 0.3V), GND = 0, I/O VL_ and I/O VCC_ unconnected, TA= TMIN to TMAX, unless other-
wise noted. Typical values are at VCC = +3.3V, VL= +1.8V, TA= +25°C.) (Notes 1, 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
I/O VCC_ Input-Voltage High VIHC VCC - 0.4 V
I/O VCC_ Input-Voltage Low VILC 0.15 V
I/O VL_ Output-Voltage High VOHL I/O VL_ source current = 20µA,
I/O VCC_ > VCC - 0.4V 0.67 ✕ VLV
I/O VL_ Output-Voltage Low VOLL I/O VL_ sink current = 20µA,
I/O VCC_ < 0.15V 0.4 V
I/O VCC_ Output-Voltage High VOHC I/O VCC_ source current = 20µA,
I/O VL _ > VL - 0.2V 0.67 ✕ VCC V
I/O VCC_ Output-Voltage Low VOLC I/O VCC_ sink current = 20µA,
I/O VL_ < 0.15V 0.4 V
THREE-STATE Input-Voltage
High VIL-THREE-STATE VL - 0.2 V
THREE-STATE Input-Voltage
Low VIL-THREE-STATE 0.15 V
LOGIC-LEVEL THRESHOLDS (MAX3373E–MAX3376E/MAX3378E/MAX3379E and MAX3390E–MAX3393E)
I/O VL_ Input-Voltage High VIHL VL - 0.2 V
I/O VL_ Input-Voltage Low VILL 0.15 V
I/O VCC_ Input-Voltage High VIHC VCC - 0.4 V
I/O VCC_ Input-Voltage Low VILC 0.15 V
I/O VL_ Output-Voltage High VOHL I/O VL_ source current = 20µA,
I/O VCC_ ≥ VCC - 0.4V 0.67 ✕ VLV
I/O VL_ Output-Voltage Low VOLL I/O VL_ sink current = 1mA,
I/O VCC_ ≤ 0.15V 0.4 V
I/O VCC_ Output-Voltage High VOHC I/O VCC_ source current = 20µA,
I/O VL_ ≥ VL - 0.2V 0.67 ✕ VCC V
I/O VCC_ Output-Voltage Low VOLC I/O VCC_ sink current = 1mA,
I/O VL_ ≤ 0.15V 0.4 V
THREE-STATE Input-Voltage
High VIH-THREE-STATE VL - 0.2 V
THREE-STATE Input-Voltage
Low VIL-THREE-STATE 0.15 V
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
4Maxim Integrated
TIMING CHARACTERISTICS
(VCC = +1.65V to +5.5V, VL= +1.2V to (VCC + 0.3V), GND = 0, RLOAD = 1MΩ, I/O test signal of Figure 1, TA= TMIN to TMAX, unless
otherwise noted. Typical values are at VCC = +3.3V, VL= +1.8V, TA= +25°C, unless otherwise noted.) (Notes 1, 2)
PARAMETER SYM B O L CONDITIONS MIN TYP MAX UNITS
MAX3372E/MAX3377E (CLOAD = 50pF)
I/O VCC_ Rise Time (Note 4) tRVCC 1100 ns
I/O VCC_ Fall Time (Note 5) tFVCC 1000 ns
I/O VL _ Rise Time (Note 4) tRVL 600 ns
I/O VL _ Fall Time (Note 5) tFVL 1100 ns
I/OVL-VCC Driving I/O VL _ 1.6
Propagation Delay I/OVCC-VL Driving I/O VCC_ 1.6 µs
Channel-to-Channel Skew tSKEW Each translator equally loaded 500 ns
Maximum Data Rate CL = 25pF 230 kbps
M A X3 3 7 3 E– M A X3 3 7 6 E/M A X3 3 7 8 E/ M A X3 3 7 9 E a n d M A X3 3 9 0 E– M A X3 3 9 3 E ( C
LOA D
= 15 p F , Dr iv e r O u t p u t Im p e d a n c e ≤ 5 0 Ω)
+1.2V ≤ VL ≤ VCC ≤ +5.5V
725
I/O VCC_ Rise Time (Note 4) tRVCC Open-drain driving 170 400 ns
637
I/O VCC_ Fall Time (Note 5) tFVCC Open-drain driving 20 50 ns
830
I/O VL _ Rise Time (Note 4) tRVL Open-drain driving 180 400 ns
330
I/O VL _ Fall Time (Note 5) tLFV Open-drain driving 30 60 ns
530
I/OVL-VCC Driving I/O VL _Open-drain driving 210 1000
430
Propagation Delay
I/OVCC-VL Driving I/O VCC_Open-drain driving 190 1000
ns
20
Channel-to-Channel Skew tSKEW Each translator
equally loaded Open-drain driving 50 ns
8 Mbps
Maximum Data Rate Open-drain driving 500 kbps
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
5
Maxim Integrated
Note 1: All units are 100% production tested at TA= +25°C. Limits over the operating temperature range are guaranteed by design
and not production tested.
Note 2: For normal operation, ensure VL< (VCC + 0.3V). During power-up, VL> (VCC + 0.3V) will not damage the device.
Note 3: To ensure maximum ESD protection, place a 1µF capacitor between VCC and GND. See
Applications Circuits
.
Note 4: 10% to 90%
Note 5: 90% to 10%
TIMING CHARACTERISTICS (continued)
(VCC = +1.65V to +5.5V, VL= +1.2V to (VCC + 0.3V), GND = 0, RLOAD = 1MΩ, I/O test signal of Figure 1, TA= TMIN to TMAX, unless
otherwise noted. Typical values are at VCC = +3.3V, VL= +1.8V, TA= +25°C, unless otherwise noted.) (Notes 1, 2)
PARAMETER SYM B O L CONDITIONS MIN TYP MAX UNITS
+1.2V ≤ VL ≤ VCC ≤ +3.3V
I/O VCC_ Rise Time (Note 4) tRVCC 25 ns
I/O VCC_ Fall Time (Note 5) tFVCC 30 ns
I/O VL _ Rise Time (Note 4) tRVL 30 ns
I/O VL _ Fall Time (Note 5) tFVL 30 ns
I/OVL-VCC Driving I/O VL _20
Propagation Delay I/OVCC-VL Driving I/O VCC_20
ns
Channel-to-Channel Skew tSKEW Each translator equally loaded 10 ns
Maximum Data Rate 10 Mbps
+2.5V ≤ VL ≤ VCC ≤ +3.3V
I/O VCC_ Rise Time (Note 4) tRVCC 15 ns
I/O VCC_ Fall Time (Note 5) tFVCC 15 ns
I/O VL _ Rise Time (Note 4) tRVL 15 ns
I/O VL _ Fall Time (Note 5) tFVL 15 ns
I/OVL-VCC Driving I/O VL _15
Propagation Delay I/OVCC-VL Driving I/O VCC_15
ns
Channel-to-Channel Skew tSKEW Each translator equally loaded 10 ns
Maximum Data Rate 16 Mbps
+1.8V ≤ VL ≤ VCC ≤ +2.5V
I/O VCC_ Rise Time (Note 4) tRVCC 15 ns
I/O VCC_ Fall Time (Note 5) tFVCC 15 ns
I/O VL _ Rise Time (Note 4) tRVL 15 ns
I/O VL _ Fall Time (Note 5) tFVL 15 ns
I/OVL-VCC Driving I/O VL _15
Propagation Delay I/OVCC-VL Driving I/O VCC_15
ns
Channel-to-Channel Skew tSKEW Each translator equally loaded 10 ns
Maximum Data Rate 16 Mbps
Typical Operating Characteristics
(RLOAD = 1MΩ, TA = +25°C, unless otherwise noted. All 230kbps TOCs apply to MAX3372E/MAX3377E only. All 8Mbps and
500kbps TOCs apply to MAX3373E–MAX3376E/MAX3378E/MAX3379E and MAX3390E–MAX3393E only.)
VL SUPPLY CURRENT vs. SUPPLY VOLTAGE
(DRIVING I/O VL, VCC = +3.3V, VL = +1.8V)
MAX3372E toc01
VCC (V)
SUPPLY CURRENT (μA)
4.954.403.853.302.752.20
100
200
300
400
500
600
0
1.65 5.50
8Mbps, CLOAD = 15pF
230kbps, CLOAD = 50pF
500kbps, OPEN-DRAIN, CLOAD = 15pF
VCC SUPPLY CURRENT vs. SUPPLY VOLTAGE
(DRIVING I/O VL, VCC = +3.3V, VL = +1.8V)
MAX3372E toc02
VCC (V)
SUPPLY CURRENT (mA)
4.954.403.853.302.752.20
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
1.65 5.50
8Mbps, CLOAD = 15pF
230kbps, CLOAD = 50pF
500kbps, OPEN-DRAIN, CLOAD = 15pF
VL SUPPLY CURRENT vs. TEMPERATURE
(DRIVING I/O VCC, VCC = +3.3V, VL = +1.8V)
MAX3372E toc03
TEMPERATURE (°C)
SUPPLY CURRENT (μA)
6035-15 10
50
100
150
200
250
300
350
400
0
-40 85
8Mbps, CLOAD = 15pF
230kbps, CLOAD = 50pF
500kbps, OPEN-DRAIN, CLOAD = 15pF
VCC SUPPLY CURRENT vs. TEMPERATURE
(DRIVING I/O VCC, VCC = +3.3V, VL = +1.8V)
MAX3372E toc04
TEMPERATURE (°C)
SUPPLY CURRENT (μA)
6035-15 10
200
400
600
800
1000
1200
1400
1600
0
-40 85
8Mbps, CLOAD = 15pF
230kbps, CLOAD = 50pF
500kbps, OPEN-DRAIN, CLOAD = 15pF
VL SUPPLY CURRENT vs. CAPACITIVE LOAD
(DRIVING I/O VL, VCC = +3.3V, VL = +1.8V)
MAX3372E toc05
CAPACITIVE LOAD (pF)
SUPPLY CURRENT (μA)
8570554025
50
100
150
200
250
300
350
0
10 100
8Mbps
230kbps
500kbps, OPEN-DRAIN
VCC SUPPLY CURRENT vs. CAPACITIVE LOAD
(DRIVING I/O VL, VCC = +3.3V, VL = +1.8V)
MAX3372E toc06
CAPACITIVE LOAD (pF)
SUPPLY CURRENT (μA)
8570554025
500
1000
1500
2000
2500
0
10 100
8Mbps
230kbps
500kbps, OPEN-DRAIN
RISE/FALL TIME vs. CAPACITIVE LOAD
(DRIVING I/O VL, VCC = +3.3V, VL = +1.8V)
MAX3372E toc07
CAPACITIVE LOAD (pF)
RISE/FALL TIME (ns)
90807060504030
500
1000
1500
2000
2500
0
20 100
DATA RATE = 230kbps
tHL
tLH
RISE/FALL TIME vs. CAPACITIVE LOAD
(DRIVING I/O VL, VCC = +3.3V, VL = +1.8V)
MAX3372E toc08
CAPACITIVE LOAD (pF)
RISE/FALL TIME (ns)
454030 3520 2515
2
4
6
8
10
12
14
16
18
0
10 50
DATA RATE = 8Mbps
tHL
tLH
RISE/FALL TIME vs. CAPACITIVE LOAD
(DRIVING I/O VL, VCC = +3.3V, VL = +1.8V)
MAX3372E toc09
CAPACITIVE LOAD (pF)
RISE/FALL TIME (ns)
45403530252015
50
100
150
200
250
0
10 50
tLH
tHL
DATA RATE = 500kbps,
OPEN-DRAIN
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
6Maxim Integrated
PROPAGATION DELAY vs. CAPACITIVE LOAD
(DRIVING I/O VL, VCC = +3.3V, VL = +1.8V)
MAX3372E toc10
CAPACITIVE LOAD (pF)
PROPAGATION DELAY (ns)
90807060504030
100
200
300
400
500
600
700
0
20 100
DATA RATE = 230kbps
tPHL
tPLH
PROPAGATION DELAY vs. CAPACITIVE LOAD
(DRIVING I/O VL, VCC = +3.3V, VL = +1.8V)
MAX3372E toc11
CAPACITIVE LOAD (pF)
PROPAGATION DELAY (ns)
45403530252015
3
6
9
12
15
0
10 50
DATA RATE = 8Mbps
tPLH
tPHL
PROPAGATION DELAY vs. CAPACITIVE LOAD
(DRIVING I/O VL, VCC = +3.3V, VL = +1.8V)
MAX3372E toc12
CAPACITIVE LOAD (pF)
PROPAGATION DELAY (ns)
45403530252015
50
100
150
200
250
300
0
10 50
DATA RATE = 500kbps,
OPEN-DRAIN
tPHL
tPLH
RISE/FALL TIME vs. CAPACITIVE LOAD
(DRIVING I/O VL, VCC = +2.5V, VL = +1.8V)
MAX3372E toc13
CAPACITIVE LOAD (pF)
RISE/FALL TIME (ns)
90807060504030
500
1000
1500
2000
2500
0
20 100
DATA RATE = 230kbps
tHL
tLH
RISE/FALL TIME vs. CAPACITIVE LOAD
(DRIVING I/O VL, VCC = +2.5V, VL = +1.8V)
MAX3372E toc14
CAPACITIVE LOAD (pF)
RISE/FALL TIME (ns)
45403530252015
2
4
6
8
10
12
14
0
10 50
DATA RATE = 8Mbps
tLH
tHL
RISE/FALL TIME vs. CAPACITIVE LOAD
(DRIVING I/O VCC, VCC = +2.5V, VL = +1.8V)
MAX3372E toc15
CAPACITIVE LOAD (pF)
RISE/FALL TIME (ns)
45403530252015
50
100
150
200
250
300
0
10 50
DATA RATE = 500kbps,
OPEN-DRAIN
tHL
tLH
RISE/FALL TIME vs. CAPACITIVE LOAD
(DRIVING I/O VCC, VCC = +3.3V, VL = +1.8V)
MAX3372E toc16
CAPACITIVE LOAD (pF)
RISE/FALL TIME (ns)
90807060504030
500
1000
1500
2000
2500
0
20 100
DATA RATE = 230kbps
tLH
tHL
RISE/FALL TIME vs. CAPACITIVE LOAD
(DRIVING I/O VCC, VCC = +3.3V, VL = +1.8V)
MAX3372E toc17
CAPACITIVE LOAD (pF)
RISE/FALL TIME (ns)
45403530252015
2
4
6
8
10
12
0
10 50
DATA RATE = 8Mbps
tHL
tLH
RISE/FALL TIME vs. CAPACITIVE LOAD
(DRIVING I/O VCC, VCC = +3.3V, VL = +1.8V)
MAX3372E toc18
CAPACITIVE LOAD (pF)
RISE/FALL TIME (ns)
45403530252015
50
100
150
200
250
300
0
10 50
DATA RATE = 500kbps,
OPEN-DRAIN
tHL
tLH
Typical Operating Characteristics (continued)
(RLOAD = 1MΩ, TA = +25°C, unless otherwise noted. All 230kbps TOCs apply to MAX3372E/MAX3377E only. All 8Mbps and
500kbps TOCs apply to MAX3373E–MAX3376E/MAX3378E/MAX3379E and MAX3390E–MAX3393E only.)
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
7
Maxim Integrated
Typical Operating Characteristics (continued)
(RLOAD = 1MΩ, TA = +25°C, unless otherwise noted. All 230kbps TOCs apply to MAX3372E/MAX3377E only. All 8Mbps and
500kbps TOCs apply to MAX3373E–MAX3376E/MAX3378E/MAX3379E and MAX3390E–MAX3393E only.)
PROPAGATION DELAY vs. CAPACITIVE LOAD
(DRIVING I/O VCC, VCC = +3.3V, VL = +1.8V)
MAX3372E toc19
CAPACITIVE LOAD (pF)
PROPAGATION DELAY (ns)
90807060504030
100
200
300
400
500
600
700
0
20 100
DATA RATE = 230kbps
tPHL
tPHL
PROPAGATION DELAY vs. CAPACITIVE LOAD
(DRIVING I/O VCC, VCC = +3.3V, VL = +1.8V)
MAX3372E toc20
CAPACITIVE LOAD (pF)
PROPAGATION DELAY (ns)
45403530252015
1
2
3
4
5
6
0
10 50
DATA RATE = 8Mbps
tPLH
tPHL
PROPAGATION DELAY vs. CAPACITIVE LOAD
(DRIVING I/O VCC, VCC = +3.3V, VL = +1.8V)
MAX3372E toc21
CAPACITIVE LOAD (pF)
PROPAGATION DELAY (ns)
45403530252015
50
100
150
200
250
300
0
10 50
DATA RATE = 500kbps,
OPEN-DRAIN
tPHL
tPLH
RISE/FALL TIME vs. CAPACITIVE LOAD
(DRIVING I/O VCC, VCC = +2.5V, VL = +1.8V)
MAX3372E toc22
CAPACITIVE LOAD (pF)
RISE/FALL TIME (ns)
90807060504030
500
1000
1500
2000
2500
0
20 100
DATA RATE = 230kbps
tLH
tHL
RISE/FALL TIME vs. CAPACITIVE LOAD
(DRIVING I/O VCC, VCC = +2.5V, VL = +1.8V)
MAX3372E toc23
CAPACITIVE LOAD (pF)
RISE/FALL TIME (ns)
403020
2
4
6
8
10
12
0
10 50
tLH
tHL
DATA RATE = 8Mbps
RISE/FALL TIME vs. CAPACITIVE LOAD
(DRIVING I/O VCC, VCC = +2.5V, VL = +1.8V)
MAX3373E toc24
CAPACITIVE LOAD (pF)
RISE/FALl TIME (ns)
403020
50
100
150
200
250
300
350
0
10 50
DATA RATE = 500kbps,
OPEN-DRAIN
tLH
tHL
RAIL-TO-RAIL DRIVING
(DRIVING I/O VL, VCC = +3.3V, VL = +1.8V,
CLOAD = 50pF, DATA RATE = 230kbps)
MAX3372E toc25
I/O VL_
I/O VCC_
1V/div
2V/div
1μs/div
RAIL-TO-RAIL DRIVING
(DRIVING I/O VL, VCC = +3.3V, VL = +1.8V,
CLOAD = 15pF, DATA RATE = 8Mbps)
MAX3372E toc26
I/O VL_
I/O VCC_
1V/div
2V/div
200ns/div
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
8Maxim Integrated
EXITING THREE-STATE OUTPUT MODE
(VCC = +3.3V, VL = +1.8V, CLOAD = 50pF)
MAX3372E toc28
I/O VL_
I/O VCC_
2μs/div
THREE-STATE
2V/div
1V/div
1V/div
PIN
3 x 4
UCSP
14
TSSOP SOT23-8 3 x 3
UCSP
8 TDFN-
EP
14 TDFN-
EP
NAME FUNCTION
A1 2 5 C2 6 1 I/O VL1Input/Output 1. Referenced to VL. (Note 6)
A2 3 4 C3 8 2 I/O VL2Input/Output 2. Referenced to VL. (Note 6)
A3 4 — — — 5 I/O VL3Input/Output 3. Referenced to VL. (Note 6)
A4 5 — — — 6 I/O VL4Input/Output 4. Referenced to VL. (Note 6)
B1 14 7 A1 4 14 VCC VCC Input Voltage +1.65V ≤ VCC ≤ +5.5V.
B2 1 3 C1 7 10 VLLogic Input Voltage +1.2V ≤ VL ≤ (VCC + 0.3V)
B3 8 6 B1 5 3 THREE-
STATE
Thr ee- S tate Outp ut M od e E nab l e. P ul l THRE E - S TATE l ow
to p l ace d evi ce i n thr ee- state outp ut m od e. I/O V
C C _
and
I/O V
L_ ar e hi g h i m p ed ance i n thr ee- state outp ut m od e.
N o t e : Log i c r efer enced to V
L ( for l og i c thr eshol d s see the
E l ectr i cal C har acter i sti cs tab l e) .
B4 7 2 B3 2 7 GND Ground
C1 13 8 A2 3 13 I/O VCC1Input/Output 1. Referenced to VCC. (Note 6)
C2 12 1 A3 1 12 I/O VCC2Input/Output 2. Referenced to VCC. (Note 6)
C3 11 — — — 9 I/O VCC3Input/Output 3. Referenced to VCC. (Note 6)
C4 10 — — — 8 I/O VCC4Input/Output 4. Referenced to VCC. (Note 6)
—6, 9 — B2 — 4, 11 N.C. No Connection. Not internally connected.
— — — — — — EP Exposed Pad. Connect EP to ground.
OPEN-DRAIN DRIVING
(DRIVING I/O VL, VCC = +3.3V, VL = +1.8V,
CLOAD = 15pF, DATA RATE = 500kbps)
MAX3372E toc27
I/O VL_
I/O VCC_
1V/div
2V/div
200ns/div
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
10 Maxim Integrated
Detailed Description
The MAX3372E–MAX3379E and MAX3390E–MAX3393E
ESD-protected level translators provide the level shifting
necessary to allow data transfer in a multivoltage system.
Externally applied voltages, VCC and VL, set the logic lev-
els on either side of the device. A low-voltage logic signal
present on the VLside of the device appears as a high-
voltage logic signal on the VCC side of the device, and
vice-versa. The MAX3374E/MAX3375E/MAX3376E/
MAX3379E and MAX3390E–MAX3393E unidirectional
level translators level shift data in one direction (VL→
VCC or VCC →VL) on any single data line. The
MAX3372E/MAX3373E and MAX3377E/MAX3378E bidi-
rectional level translators utilize a transmission-gate-
based design (see Figure 2) to allow data translation in
either direction (VL↔VCC) on any single data line. The
MAX3372E–MAX3379E and MAX3390E–MAX3393E
accept VLfrom +1.2V to +5.5V and VCC from +1.65V to
+5.5V, making them ideal for data transfer between low-
voltage ASICs/PLDs and higher voltage systems.
All devices in the MAX3372E–MAX3379E, MAX3390E–
MAX3393E family feature a three-state output mode that
reduces supply current to less than 1µA, thermal short-
circuit protection, and ±15kV ESD protection on the VCC
side for greater protection in applications that route sig-
nals externally. The MAX3372E/MAX3377E operate at a
guaranteed data rate of 230kbps. Slew-rate limiting
reduces EMI emissions in all 230kbps devices. The
MAX3373E–MAX3376E/MAX3378E/MAX3379E and
MAX3390E–MAX3393E operate at a guaranteed data rate
of 8Mbps over the entire specified operating voltage
range. Within specific voltage domains, higher data rates
are possible. (See the
Timing Characteristics
table.)
MAX3372E–MAX3379E
AND MAX3390E–MAX3393E
I/O VL_
I/O VL_
(tRISE,
tFALL < 10ns)
DATA
I/O VCC_
RLOAD CLOAD
VCC
VCC
VL
VL
GND
tPD-VCC-LH tPD-VCC-HL
I/O VCC_
tRVCC tFVCC
Figure 1a. Rail-to-Rail Driving I/O VL
MAX3372E–MAX3379E
AND MAX3390E–MAX3393E
I/O VL_
I/O VCC_
(tRISE,
tFALL < 10ns)
DATA
I/O VCC_
VCC
VCC
VL
VL
GND
RLOAD
CLOAD
tPD-VL-LH tPD-VL-HL
I/O VL_
tRVL tFVL
Figure 1b. Rail-to-Rail Driving I/O VCC
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
11
Maxim Integrated
Level Translation
For proper operation ensure that +1.65V ≤VCC ≤
+5.5V, +1.2V ≤VL≤+5.5V, and VL≤(VCC + 0.3V).
During power-up sequencing, VL≥(VCC + 0.3V) will
not damage the device. During power-supply sequenc-
ing, when VCC is floating and VLis powering up, a cur-
rent may be sourced, yet the device will not latch up.
The speed-up circuitry limits the maximum data rate for
devices in the MAX3372E–MAX3379E, MAX3390E–
MAX3393E family to 16Mbps. The maximum data rate
also depends heavily on the load capacitance (see the
Typical Operating Characteristics
), output impedance
of the driver, and the operational voltage range (see the
Timing Characteristics
table)
.
Speed-Up Circuitry
The MAX3373E–MAX3376E/MAX3378E/MAX3379E and
MAX3390E–MAX3393E feature a one-shot generator that
decreases the rise time of the output. When triggered,
MOSFETs PU1 and PU2 turn on for a short time to pull up
I/O VL_ and I/O VCC_ to their respective supplies (see
Figure 2b). This greatly reduces the rise time and propa-
gation delay for the low-to-high transition. The scope
photo of Rail-to-Rail Driving for 8Mbps Operation in the
Typical Operating Characteristics
shows the speed-up
circuitry in operation.
Rise-Time Accelerators
The MAX3373E–MAX3376E/MAX3378E/MAX3379E and
the MAX3390E–MAX3393E have internal rise-time
accelerators allowing operation up to 16Mbps. The
rise-time accelerators are present on both sides of the
device and act to speed up the rise time of the input
and output of the device, regardless of the direction of
the data. The triggering mechanism for these accelera-
tors is both level and edge sensitive. To prevent false
triggering of the rise-time accelerators, signal fall times
of less than 20ns/V are recommended for both the
inputs and outputs of the device. Under less noisy con-
ditions, longer signal fall times may be acceptable.
MAX3372E–MAX3379E
AND MAX3390E–MAX3393E
I/O VL_ I/O VCC_
VCC
VCC
VL
VL
GND
I/O VCC_
tPD-VCC-LH
tPD-VCC-HL
I/O VL_
tRVCC tFVCC
DATA
RLOAD
CLOAD
Figure 1c. Open-Drain Driving I/O VCC
MAX3373E–MAX3376E,
MAX3378E/MAX3379E
AND MAX3390E–MAX3393E
I/O VL_
I/O VCC_
DATA
I/O VCC_
VCC
VCC
VL
VL
GND
RLOAD
CLOAD
tPD-VL-LH
tPD-VL-HL
I/O VL_
tRVL tFVL
Figure 1d. Open-Drain Driving I/O VL
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
12 Maxim Integrated
Three-State Output Mode
Pull THREE-STATE low to place the MAX3372E–
MAX3379E and MAX3390E–MAX3393E in three-state out-
put mode. Connect THREE-STATE to VL(logic-high) for
normal operation. Activating the three-state output mode
disconnects the internal 10kΩpullup resistors on the I/O
VCC and I/O VLlines. This forces the I/O lines to a high-
impedance state, and decreases the supply current to
less than 1µA. The high-impedance I/O lines in three-
state output mode allow for use in a multidrop network.
When in three-state output mode, do not allow the voltage
at I/O VL_ to exceed (VL+ 0.3V), or the voltage at I/O
VCC_ to exceed (VCC + 0.3V).
Thermal Short-Circuit Protection
Thermal overload detection protects the MAX3372E–
MAX3379E and MAX3390E–MAX3393E from short-circuit
fault conditions. In the event of a short-circuit fault, when
the junction temperature (TJ) reaches +152°C, a thermal
sensor signals the three-state output mode logic to force
the device into three-state output mode. When TJhas
cooled to +142°C, normal operation resumes.
VCC
I/O VLI/O VCC
GATE
BIAS
VL
P P
N
Figure 2a. Functional Diagram, MAX3372E/MAX3377E (1 I/O line)
VCC
I/O VL_ I/O VCC_
GATE
BIAS
VL
PU1 PU2
N
ONE-SHOT
BLOCK
ONE-SHOT
BLOCK
Figure 2b. Functional Diagram, MAX3373E/MAX3378E (1 I/O line)
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
13
Maxim Integrated
CHARGE-CURRENT-
LIMIT RESISTOR
DISCHARGE
RESISTANCE
STORAGE
CAPACITOR
Cs
100pF
RC 1MΩRD 1500Ω
HIGH-
VOLTAGE
DC
SOURCE
DEVICE-
UNDER-
TEST
Figure 3a. Human Body ESD Test Model
IP 100%
90%
36.8%
tRL TIME
tDL
CURRENT WAVEFORM
PEAK-TO-PEAK RINGING
(NOT DRAWN TO SCALE)
Ir
10%
0
0
AMPERES
Figure 3b. Human Body Current Waveform
±15kV ESD Protection
As with all Maxim devices, ESD-protection structures are
incorporated on all pins to protect against electrostatic
discharges encountered during handling and assembly.
The I/O VCC lines have extra protection against static
electricity. Maxim’s engineers have developed state-of-
the-art structures to protect these pins against ESD of
±15kV without damage. The ESD structures withstand
high ESD in all states: normal operation, three-state
output mode, and powered down. After an ESD event,
Maxim’s E versions keep working without latchup,
whereas competing products can latch and must be
powered down to remove latchup.
ESD protection can be tested in various ways. The I/O
VCC lines of this product family are characterized for
protection to the following limits:
1) ±15kV using the Human Body Model
2) ±8kV using the Contact Discharge method specified
in IEC 1000-4-2
3) ±10kV using IEC 1000-4-2’s Air-Gap Discharge
method
ESD Test Conditions
ESD performance depends on a variety of conditions.
Contact Maxim for a reliability report that documents
test setup, test methodology, and test results.
Human Body Model
Figure 3a shows the Human Body Model and Figure 3b
shows the current waveform it generates when dis-
charged into a low impedance. This model consists of
a 100pF capacitor charged to the ESD voltage of inter-
est, which is then discharged into the test device
through a 1.5kΩresistor.
IEC 1000-4-2
The IEC 1000-4-2 standard covers ESD testing and
performance of finished equipment; it does not specifi-
cally refer to integrated circuits. The MAX3372E–
MAX3379E and MAX3390E–MAX3393E help to design
equipment that meets Level 3 of IEC 1000-4-2, without
the need for additional ESD-protection components.
The major difference between tests done using the
Human Body Model and IEC 1000-4-2 is higher peak
current in IEC 1000-4-2, because series resistance is
lower in the IEC 1000-4-2 model. Hence, the ESD with-
stand voltage measured to IEC 1000-4-2 is generally
lower than that measured using the Human Body Model.
Figure 4a shows the IEC 1000-4-2 model, and Figure 4b
shows the current waveform for the ±8kV, IEC 1000-4-2,
Level 4, ESD contact-discharge test.
The air-gap test involves approaching the device with a
charged probe. The contact-discharge method con-
nects the probe to the device before the probe
is energized.
Machine Model
The Machine Model for ESD tests all pins using a
200pF storage capacitor and zero discharge resis-
tance. Its objective is to emulate the stress caused by
contact that occurs with handling and assembly during
manufacturing. Of course, all pins require this protec-
tion during manufacturing, not just inputs and outputs.
Therefore, after PCB assembly, the Machine Model is
less relevant to I/O ports.
Applications Information
Power-Supply Decoupling
To reduce ripple and the chance of transmitting incor-
rect data, bypass VLand VCC to ground with a 0.1µF
capacitor. See the
Typical Operating Circuit.
To ensure
full ±15kV ESD protection, bypass VCC to ground with a
1µF capacitor. Place all capacitors as close to the
power-supply inputs as possible.
I2C Level Translation
The MAX3373E–MAX3376E, MAX3378E/MAX3379E
and MAX3390E–MAX3393E level-shift the data present
on the I/O lines between +1.2V and +5.5V, making
them ideal for level translation between a low-voltage
ASIC and an I2C device. A typical application involves
interfacing a low-voltage microprocessor to a 3V or 5V
D/A converter, such as the MAX517.
Push-Pull vs. Open-Drain Driving
All devices in the MAX3372E–MAX3379E and
MAX3390E–MAX3393E family may be driven in a push-
pull configuration. The MAX3373E–MAX3376E/
MAX3378E/MAX3379E and MAX3390E–MAX3393E
include internal 10kΩresistors that pull up I/O VL_ and
I/O VCC_ to their respective power supplies, allowing
operation of the I/O lines with open-drain devices. See
the
Timing Characteristics
table for maximum data rates
when using open-drain drivers.
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
14 Maxim Integrated
tr = 0.7ns to 1ns
30ns
60ns
t
100%
90%
10%
IPEAK
I
Figure 4b. IEC 1000-4-2 ESD Generator Current Waveform
CHARGE-CURRENT-
LIMIT RESISTOR
DISCHARGE
RESISTANCE
STORAGE
CAPACITOR
Cs
150pF
RC 50MΩ to 100MΩRD 330Ω
HIGH-
VOLTAGE
DC
SOURCE
DEVICE-
UNDER-
TEST
Figure 4a. IEC 1000-4-2 ESD Test Model
MAX3378E–MAX3383E
THREE-STATE
I/O VL_ DATA
DATA I/O VCC_
0.1µF0.1µF1µF
+3.3V+1.8V
VCC
+3.3V
SYSTEM
+1.8V
SYSTEM
CONTROLLER
VL
Typical Operating Circuit
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
15
Maxim Integrated
MAX3372E/MAX3373E
THREE-STATE
I/O VL2
I/O VL1
DATADATA I/O VCC2
I/O VCC1
0.1µF0.1µF 1µF
+3.3V+1.8V
VCC
+3.3V
SYSTEM
+1.8V
SYSTEM
CONTROLLER
VL
MAX3374E
THREE-STATE
I VL2
I VL1
DATADATA
O VCC1
O VCC2
0.1µF0.1µF 1µF
+3.3V+1.8V
VCC
+3.3V
SYSTEM
+1.8V
SYSTEM
CONTROLLER
VL
Applications Circuits
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
16 Maxim Integrated
Applications Circuits (continued)
MAX3375E
THREE-STATE
I VL2
O VL1
DATADATA O VCC2
I VCC1
0.1µF0.1µF 1µF
+3.3V+1.8V
VCC
+3.3V
SYSTEM
+1.8V
SYSTEM
CONTROLLER
VL
MAX3376E
THREE-STATE
DATADATA I VCC2
I VCC1
0.1µF0.1µF 1µF
+3.3V+1.8V
VCC
+3.3V
SYSTEM
+1.8V
SYSTEM
CONTROLLER
VL
O VL2
O VL1
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
17
Maxim Integrated
Applications Circuits (continued)
MAX3377E/MAX3378E
THREE-STATE
I/O VL4
I/O VL3
I/O VL1
I/O VL2 DATA
DATA
I/O VCC1
I/O VCC2
I/O VCC3
I/O VCC4
0.1µF0.1µF 1µF
+3.3V+1.8V
VCC
+3.3V
SYSTEM
+1.8V
SYSTEM
CONTROLLER
VL
MAX3379E
THREE-STATE
DATA
DATA
0.1µF
0.1µF 1µF
+3.3V+1.8V
VCC
+3.3V
SYSTEM
+1.8V
SYSTEM
CONTROLLER
VL
I VL4
I VL3
I VL1
I VL2
O VCC1
O VCC2
O VCC3
O VCC4
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
18 Maxim Integrated
Applications Circuits (continued)
MAX3390E
THREE-STATE
DATA
DATA
0.1µF
0.1µF 1µF
+3.3V+1.8V
VCC
+3.3V
SYSTEM
+1.8V
SYSTEM
CONTROLLER
VL
I VL4
O VL1
I VL2
I VL3
I VL1
O VCC2
O VCC3
O VCC4
MAX3391E
THREE-STATE
DATA
DATA
0.1µF
0.1µF 1µF
+3.3V+1.8V
VCC
+3.3V
SYSTEM
+1.8V
SYSTEM
CONTROLLER
VL
I VL4
O VL1
O VL2
I VL3
I VCC1
I VCC2
O VCC3
O VCC4
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
19
Maxim Integrated
Applications Circuits (continued)
MAX3392E
THREE-STATE
DATA
DATA
0.1µF
0.1µF 1µF
+3.3V+1.8V
VCC
+3.3V
SYSTEM
+1.8V
SYSTEM
CONTROLLER
VL
I VL4
O VL1
O VL2
O VL3
I VCC1
I VCC2
I VCC3
O VCC4
MAX3393E
THREE-STATE
DATA
DATA
0.1µF
0.1µF 1µF
+3.3V+1.8V
VCC
+3.3V
SYSTEM
+1.8V
SYSTEM
CONTROLLER
VL
I VL4
O VL1
O VL2
O VL3
I VCC1
I VCC2
I VCC3
I VCC4
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
20 Maxim Integrated
Ordering Information (continued)
PART TEMP RANGE PIN-
PACKAGE
MAX3372EEBL+T -40°C to +85°C 9 UCSP
(1.5mm x 1.5mm)
MAX3372EETA+T -40°C to +85°C 8 TDFN-EP**
(3mm x 3mm)
MAX3373EEKA+T -40°C to +85°C 8 SOT23
MAX3373EEBL+T -40°C to +85°C 9 UCSP
(1.5mm x 1.5mm)
MAX3373EETA+T -40°C to +85°C 8 TDFN-EP**
(3mm x 3mm)
MAX3374EEKA+T -40°C to +85°C 8 SOT23
MAX3374EEBL+T -40°C to +85°C 9 UCSP
(1.5mm x 1.5mm)
MAX3374EETA+T -40°C to +85°C 8 TDFN-EP**
(3mm x 3mm)
MAX3375EEKA+T -40°C to +85°C 8 SOT23
MAX3375EEBL+T -40°C to +85°C 9 UCSP
(1.5mm x 1.5mm)
MAX3375EETA+T -40°C to +85°C 8 TDFN-EP**
(3mm x 3mm)
MAX3376EEKA+T -40°C to +85°C 8 SOT23
MAX3376EEBL+T -40°C to +85°C 9 UCSP
(1.5mm x 1.5mm)
MAX3376EETA+T -40°C to +85°C 8 TDFN-EP**
(3mm x 3mm)
MAX3377EEUD+ -40°C to +85°C 14 TSSOP
MAX3377EEBC+T -40°C to +85°C 9 UCSP
(1.5mm x 1.5mm)
MAX3377EETD+T -40°C to +85°C 14 TDFN-EP**
(3mm x 3mm)
MAX3378EEUD+ -40°C to +85°C 14 TSSOP
PART TEMP RANGE PIN-
PACKAGE
MAX3378EEBC+T -40°C to +85°C 12 UCSP
(1.5mm x 2.0mm)
MAX3378EETD+T -40°C to +85°C 14 TDFN-EP**
(3mm x 3mm)
MAX3379EEUD+ -40°C to +85°C 14 TSSOP
MAX3379EEBC+T -40°C to +85°C 12 UCSP
(1.5mm x 2.0mm)
MAX3379EETD+T -40°C to +85°C 14 TDFN-EP**
(3mm x 3mm)
MAX3390EEUD+ -40°C to +85°C 14 TSSOP
MAX3390EEBC+T -40°C to +85°C 12 UCSP
(1.5mm x 2.0mm)
MAX3390EETD+T -40°C to +85°C 14 TDFN-EP**
(3mm x 3mm)
MAX3391EEUD+ -40°C to +85°C 14 TSSOP
MAX3391EEBC+T -40°C to +85°C 12 UCSP
(1.5mm x 2.0mm)
MAX3391EETD+T -40°C to +85°C 14 TDFN-EP**
(3mm x 3mm)
MAX3392EEUD+ -40°C to +85°C 14 TSSOP
MAX3392EEBC+T -40°C to +85°C 12 UCSP
(1.5mm x 2.0mm)
MAX3392EETD+T -40°C to +85°C 14 TDFN-EP**
(3mm x 3mm)
MAX3393EEUD+ -40°C to +85°C 14 TSSOP
MAX3393EEBC+T -40°C to +85°C 12 UCSP
(1.5mm x 2.0mm)
MAX3393EETD+T -40°C to +85°C 14 TDFN-EP**
(3mm x 3mm)
+
Denotes a lead-free package.
**
EP = Exposed pad.
T = Tape and reel.
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
21
Maxim Integrated
Selector Guide
PART
LEVEL
TRANS-
LATION
Tx/
Rx†
DATA
RATE
TOP
MARK
MAX3372EEKA+T Bi
2/2
AAKO
MAX3372EEBL+T Bi
2/2
AAR
MAX3372EETA+T Bi
2/2
230kbps
AQG
MAX3373EEKA+T Bi
2/2
AAKS
MAX3373EEBL+T Bi
2/2
AAZ
MAX3373EETA+T Bi
2/2
AQH
MAX3374EEKA+T Uni
2/0
AALH
MAX3374EEBL+T Uni
2/0
ABA
MAX3374EETA+T Uni
2/0
AQI
MAX3375EEKA+T Uni
1/1
AALI
MAX3375EEBL+T Uni
1/1
ABB
MAX3375EETA+T Uni
1/1
AQJ
MAX3376EEKA+T Uni
0/2
AALG
MAX3376EEBL+T Uni
0/2
AAV
MAX3376EETA+T Uni
0/2
8Mbps*
AQK
MAX3377EEUD+ Bi
4/4
—
MAX3377EEBC+T Bi
4/4
AAX
MAX3377EETD+T Bi
4/4
230kbps
AAG
PART
LEVEL
TRANS-
LATION
Tx/
Rx†
DATA
RATE
TOP
MARK
MAX3378EEUD+ Bi
4/4
—
MAX3378EEBC+T Bi
4/4
AAY
MAX3378EETD+T Bi
4/4
AAH
MAX3379EEUD+ Uni
4/0
—
MAX3379EEBC+T Uni
4/0
AAZ
MAX3379EETD+T Uni
4/0
AAI
MAX3390EEUD+ Uni
3/1
—
MAX3390EEBC+T Uni
3/1
ABA
MAX3390EETD+T Uni
3/1
AAJ
MAX3391EEUD+ Uni
2/2
—
MAX3391EEBC+T Uni
2/2
ABB
MAX3391EETD+T Uni
2/2
AAK
MAX3392EEUD+ Uni
1/3
—
MAX3392EEBC+T Uni
1/3
ABC
MAX3392EETD+T Uni
1/3
AAL
MAX3393EEUD+ Uni
0/4
—
MAX3393EEBC+T Uni
0/4
ABD
MAX3393EETD+T Uni
0/4
8Mbps*
AAM
†
Tx = VL
→
VCC, Rx = VCC
→
VL
*
Higher data rates are possible (see the Timing Characteristics table).
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
22 Maxim Integrated
A
1
2
3
BC
9 UCSP (1.5mm x 1.5mm)
BOTTOM VIEW
VCC
I VCC1
I VCC2
O VL1
O VL2
N.C.
GND
VL
THREE-STATE
A
1
2
3
BC
9 UCSP (1.5mm x 1.5mm)
BOTTOM VIEW
VCC
O VCC1
I VCC2
I VL1
O VL2
N.C.
GND
VL
THREE-STATE
A
1
2
3
BC
9 UCSP (1.5mm x 1.5mm)
BOTTOM VIEW
VCC
O VCC1
O VCC2
I VL1
I VL2
N.C.
GND
VL
THREE-STATE
A
1
2
3
BC
9 UCSP (1.5mm x 1.5mm)
BOTTOM VIEW
VCC
I/O VCC1
I/O VCC2
I/O VL1
I/O VL2
N.C.
GND
VL
THREE-STATE
THREE-STATE
I VL1I VL2
1
2
8
7
O VCC1
VCC
GND
VL
O VCC2
SOT23-8
TOP VIEW
3
4
6
5
MAX3374E
THREE-STATE
O VL1I VL2
1
2
8
7
I VCC1
VCC
GND
VL
O VCC2
SOT23-8
TOP VIEW
3
4
6
5
MAX3375E
THREE-STATE
O VL1O VL2
1
2
8
7
I VCC1
VCC
GND
VL
I VCC2
SOT23-8
TOP VIEW
3
4
6
5
MAX3376E
THREE-STATE
I/O VL1I/O VL2
1
+
+
+
+
2
8
7
I/O VCC1
VCC
GND
VL
I/O VCC2
SOT23-8
TOP VIEW
3
4
6
5
MAX3372E
MAX3373E
THREE-STATE
I/O VL1
I/O VCC1
1
2
8
7
I/O VL2
VL
GND
VCC
*CONNECT EP TO GND
*CONNECT EP TO GND
*CONNECT EP TO GND
*CONNECT EP TO GND
I/O VCC2
TDFN-8 (3mm x 3mm)
TOP VIEW
3
4
6
5
THREE-STATE
I VL1
O VCC1
1
2
8
7
I VL2
VL
GND
VCC
O VCC2
TDFN-8 (3mm x 3mm)
TOP VIEW
3
4
6
5
THREE-STATE
O VL1
I VCC1
1
2
8
7
I VL2
VL
GND
VCC
O VCC2
TDFN-8 (3mm x 3mm)
TOP VIEW
3
4
6
5
THREE-STATE
O VL1
I VCC1
1
2
8
7
O VL2
VL
GND
VCC
I VCC2
TDFN-8 (3mm x 3mm)
TOP VIEW
3
4
6
5
+
+
+
+
*EP
*EP
*EP
*EP
Pin Configurations (continued)
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
23
Maxim Integrated
Pin Configurations (continued)
A
1
2
3
4
BC
12 UCSP (1.5mm x 2.0mm)
BOTTOM VIEW
VCC I/O VCC1
I/O VCC2
I/O VCC3
I/O VL3
I/O VL2
I/O VL1
VL
I/O VCC4
GND
I/O VL4
THREE-STATE
14
13
12
11
10
9
8
1
2
3
4
5
6
7
VCC
O VCC1
O VCC2
O VCC3I VL3
I VL2
I VL1
VL
MAX3379E
O VCC4
N.C.
THREE-STATEGND
N.C.
I VL4
TSSOP-14
TOP VIEW
A
1
2
3
4
BC
12 UCSP (1.5mm x 2.0mm)
BOTTOM VIEW
VCC O VCC1
O VCC2
O VCC3
I VL3
I VL2
I VL1
VL
O VCC4
GND
I VL4
THREE-STATE
14
13
12
11
10
9
8
1
2
3
4
5
6
7
VCC
I VCC1
O VCC2
O VCC3I VL3
I VL2
O VL1
VL
MAX3390E
O VCC4
N.C.
THREE-STATEGND
N.C.
I VL4
TSSOP-14
TOP VIEW
A
1
2
3
4
BC
12 UCSP (1.5mm x 2.0mm)
BOTTOM VIEW
VCC I VCC1
O VCC2
O VCC3
I VL3
I VL2
O VL1
VL
O VCC4
GND
I VL4
THREE-STATE
14
13
12
11
10
9
8
1
2
3
4
5
6
7
VCC
I/0 VCC1
I/0 VCC2
I/0 VCC3I/O VL3
I/O VL2
I/O VL1
VL
MAX3377E
MAX3378E
I/0 VCC4
N.C.
THREE-STATEGND
N.C.
I/O VL4
TSSOP-14
TOP VIEW
14
13
12
11
10
9
8
1
2
3
4
5
6
7
VCC
I/0 VCC1
I/0 VCC2
N.C.N.C.
I/O VL2
I/O VL1
VL
I/0 VCC3
GND
I/O VL4
I/O VL3
TDFN-14 (3mm x 3mm)
TOP VIEW
THREE-STATE
I/0 VCC4
14
13
12
11
10
9
8
1
2
3
4
5
6
7
VCC
0 VCC1
0 VCC2
N.C.N.C.
I VL2
I VL1
VL
0 VCC3
GND
I VL4
I VL3
TDFN-14 (3mm x 3mm)
TOP VIEW
THREE-STATE
0 VCC4
14
13
12
11
10
9
8
1
2
3
4
5
6
7
VCC
I VCC1
0 VCC2
N.C.N.C.
I VL2
O VL1
VL
0 VCC3
GND
I VL4
I VL3
TDFN-14 (3mm x 3mm)
TOP VIEW
THREE-STATE
0 VCC4
++
++
+
+
*CONNECT EP TO GND
*CONNECT EP TO GND
*CONNECT EP TO GND
*EP
*EP
*EP
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
24 Maxim Integrated
Pin Configurations (continued)
A
1
2
3
4
BC
12 UCSP (1.5mm x 2.0mm)
BOTTOM VIEW
VCC I VCC1
I VCC2
I VCC3
O VL3
O VL2
O VL1
VL
I VCC4
GND
O VL4
THREE-STATE
14
13
12
11
10
9
8
1
2
3
4
5
6
7
VCC
I VCC1
I VCC2
I VCC3O VL3
O VL2
O VL1
VL
MAX3393E
I VCC4
N.C.
THREE-STATEGND
N.C.
O VL4
TSSOP-14
TOP VIEW
A
1
2
3
4
BC
12 UCSP (1.5mm x 2.0mm)
BOTTOM VIEW
VCC I VCC1
I VCC2
I VCC3
O VL3
O VL2
O VL1
VL
O VCC4
GND
I VL4
THREE-STATE
14
13
12
11
10
9
8
1
2
3
4
5
6
7
VCC
I VCC1
I VCC2
I VCC3O VL3
O VL2
O VL1
VL
MAX3392E
O VCC4
N.C.
THREE-STATEGND
N.C.
I VL4
TSSOP-14
TOP VIEW
14
13
12
11
10
9
8
1
2
3
4
5
6
7
VCC
I VCC1
I VCC2
O VCC3I VL3
O VL2
O VL1
VL
MAX3391E
O VCC4
N.C.
THREE-STATEGND
N.C.
I VL4
TSSOP-14
TOP VIEW
A
1
2
3
4
BC
12 UCSP (1.5mm x 2.0mm)
BOTTOM VIEW
VCC I VCC1
I VCC2
O VCC3
I VL3
O VL2
O VL1
VL
O VCC4
GND
I VL4
THREE-STATE
14
13
12
11
10
9
8
1
2
3
4
5
6
7
VCC
I VCC1
I VCC2
N.C.N.C.
O VL2
O VL1
VL
0 VCC3
GND
I VL4
I VL3
TDFN-14 (3mm x 3mm)
TOP VIEW
THREE-STATE
0 VCC4
14
13
12
11
10
9
8
1
2
3
4
5
6
7
VCC
I VCC1
I VCC2
N.C.N.C.
O VL2
O VL1
VL
I VCC3
GND
I VL4
O VL3
TDFN-14 (3mm x 3mm)
TOP VIEW
THREE-STATE
0 VCC4
14
13
12
11
10
9
8
1
2
3
4
5
6
7
VCC
I VCC1
I VCC2
N.C.N.C.
O VL2
O VL1
VL
I VCC3
GND
O VL4
O VL3
TDFN-14 (3mm x 3mm)
TOP VIEW
THREE-STATE
I VCC4
++
++
+
+
*CONNECT EP TO GND
*CONNECT EP TO GND
*CONNECT EP TO GND
*EP
*EP
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
25
Maxim Integrated
Chip Information
PROCESS: BiCMOS
Package Information
For the latest package outline information and land patterns (foot-
prints), go to www.maximintegrated.com/packages. Note that a
“+”, “#”, or “-” in the package code indicates RoHS status only.
Package drawings may show a different suffix character, but the
drawing pertains to the package regardless of RoHS status.
PACKAGE
TYPE
PACKAGE
CODE OUTLINE NO. LAND
PATTERN NO.
8 SOT23 K8SN+1 21-0078 90-0176
9 UCSP B9+2 21-0093
Refer to
Application
Note 1891
12 UCSP B12+1 21-0104
Refer to
Application
Note 1891
8 TDFN T833+2 21-0137 90-0059
14 TDFN T1433+2 21-0137 90-0063
14 TSSOP U14+1 21-0066 90-0113
Maxim Integrated cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim Integrated product. No circuit patent
licenses are implied. Maxim Integrated reserves the right to change the circuitry and specifications without notice at any time. The parametric values (min and
max limits) shown in the Electrical Characteristics table are guaranteed. Other parametric values quoted in this data sheet are provided for guidance.
26
________________________________Maxim Integrated 160 Rio Robles, San Jose, CA 95134 USA 1-408-601-1000
© 2013 Maxim Integrated Products, Inc. Maxim Integrated and the Maxim Integrated logo are trademarks of Maxim Integrated Products, Inc.
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
Revision History
REVISION
NUMBER
REVISION
DATE DESCRIPTION PAGES
CHANGED
0 1/02 Initial Release —
1 12/06 Addition of 12-bump ECSP packaging –
2 11/07 Addition of lead-free options 1, 20–31
3 1/13 Updated packaging information; updated Absolute Maximum Ratings 1, 2, 9, 20–23