AUTOMOTIVE GRADE AUIRLR120N Features Advanced Planar Technology Logic Level Gate Drive Low On-Resistance Dynamic dV/dT Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET(R) Power MOSFET VDSS AUIRLR120N D-Pak 0.185 10A ID D G S D-Pak AUIRLR120N G Gate D Drain Standard Pack Form Quantity Tube 75 Tape and Reel Left 3000 Package Type max. RDS(on) Description Specifically designed for Automotive applications, this cellular design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Base part number 100V S Source Orderable Part Number AUIRLR120N AUIRLR120NTRL Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. ID @ TC = 25C Continuous Drain Current, VGS @ 10V 10 ID @ TC = 100C Continuous Drain Current, VGS @ 10V 7.0 IDM PD @TC = 25C Pulsed Drain Current Maximum Power Dissipation 35 48 VGS EAS IAR EAR dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Symbol RJC RJA RJA Parameter Junction-to-Case Junction-to-Ambient ( PCB Mount) Junction-to-Ambient Units A W 0.32 16 85 6.0 4.8 5.0 -55 to + 175 W/C V mJ A mJ V/ns C 300 Typ. Max. Units --- --- --- 3.1 50 110 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-12-11 AUIRLR120N Static @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 100 --- --- --- --- 1.0 3.1 --- --- --- --- Typ. --- 0.12 --- --- --- --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.185 VGS = 10V, ID = 6.0A 0.225 VGS = 5.0V, ID = 6.0A 0.265 VGS = 4.0V, ID = 5.0A 2.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 6.0A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V,VGS = 0V,TJ =150C 100 VGS = 16V nA -100 VGS = - 16V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time --- --- --- --- --- --- --- --- --- --- 4.0 35 23 22 20 4.6 10 --- --- --- --- LD Internal Drain Inductance --- 4.5 --- LS Internal Source Inductance --- 7.5 --- --- --- --- 440 97 50 --- --- --- Min. Typ. Max. Units --- --- 10 --- --- 35 --- --- --- --- 110 410 1.3 160 620 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time ID = 6.0A nC VDS = 80V VGS = 5.0V, See Fig. 6 &13 VDD = 50V ID = 6.0A ns RG = 11VGS = 5.0V RD = 8.2,See Fig. 10 Between lead, 6mm (0.25in.) nH from package and center of die contact VGS = 0V pF VDS = 25V = 1.0MHz, See Fig.5 Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = 6.0A, VGS = 0V ns TJ = 25C ,IF = 6.0A nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Starting TJ = 25C, L = 4.7mH, RG = 25, IAS = 6.0A (See fig. 12) ISD 6.0A, di/dt 340A/s, VDD V(BR)DSS, TJ 175C. Pulse width 300s; duty cycle 2%. R is measured at TJ approximately 90C. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 2 2015-12-11 AUIRLR120N 100 100 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V ID , Drain-to-Source Current (A) ID , Drain-to-Source Current (A) 10 1 2.5V 20s PULSE WIDTH T J = 25C 0.1 0.1 1 10 10 2.5V 1 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25C TJ = 175C 1 VDS = 50V 20s PULSE WIDTH 4 6 8 A 100 I D = 10A 2.5 2.0 1.5 1.0 0.5 VGS = 10V 0.0 10 VGS , Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 10 Fig. 2 Typical Output Characteristics 100 0.1 1 VDS , Drain-to-Source Voltage (V) Fig. 1 Typical Output Characteristics 10 20s PULSE WIDTH T J = 175C 0.1 0.1 A 100 VDS , Drain-to-Source Voltage (V) 2 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP TOP A -60 -40 -20 0 20 40 60 A 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig. 4 Normalized On-Resistance Vs. Temperature 2015-12-11 AUIRLR120N 15 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd V GS , Gate-to-Source Voltage (V) C, Capacitance (pF) 800 Ciss 600 400 Coss 200 Crss 0 1 10 100 A I D = 6.0A V DS = 80V V DS = 50V V DS = 20V 12 9 6 3 FOR TEST CIRCUIT SEE FIGURE 13 0 0 VDS , Drain-to-Source Voltage (V) 10 15 20 25 A Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 10s TJ = 175C 10 I D , Drain Current (A) ISD , Reverse Drain Current (A) 5 TJ = 25C 1 VGS = 0V 0.1 0.4 4 0.6 0.8 1.0 1.2 A 1.4 10 100s 1ms 1 10ms TC = 25C TJ = 175C Single Pulse 0.1 1 10 A 100 1000 VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 2015-12-11 AUIRLR120N 10 ID, Drain Current (Amps) 8 6 Fig 10a. Switching Time Test Circuit 4 2 A 0 25 50 75 100 125 150 175 TC , Case Temperature (C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms Thermal Response (Z thJC) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.01 0.00001 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x ZthJC + TC 0.0001 0.001 0.01 0.1 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2015-12-11 AUIRLR120N DRIVER L VDS D.U.T RG + V - DD IAS 20V 0.01 tp Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) 200 15V TOP BOTTOM 160 ID 2.4A 4.2A 6.0A 120 80 40 0 25 50 75 100 125 150 A 175 Starting TJ , Junction Temperature (C) V(BR)DSS tp Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 13a. Gate Charge Waveform 6 Fig 13b. Gate Charge Test Circuit 2015-12-11 AUIRLR120N Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs 7 2015-12-11 AUIRLR120N D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches)) D-Pak (TO-252AA) Part Marking Information Part Number AULR120N YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2015-12-11 AUIRLR120N D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-12-11 AUIRLR120N Qualification Information Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D-Pak MSL1 Class M2 (+/- 150V) AEC-Q101-002 Class H1A (+/- 500V) AEC-Q101-001 Class C5 (+/- 2000V) AEC-Q101-005 Yes Highest passing voltage. Revision History Date 12/11/2015 Comments Updated datasheet with corporate template Corrected ordering table on page 1. Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's products and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer's technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies' products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 10 2015-12-11