VDRM IT(AV)M IT(RMS) ITSM VT0 rT = = = = = = 6500 V 1800 A 2820 A 50*103 A 1.2 V 0.43 m Phase Control Thyristor 5STP 18M6500 Doc. No. 5SYA1010-05 Aug. 13 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate Blocking Maximum rated values 1) Parameter Symbol Conditions Max. surge peak forward and VDSM, reverse blocking voltage VRSM Max repetitive peak forward VDRM, and reverse blocking voltage VRRM Max crest working forward and reverse voltages VDWM, VRWM Critical rate of rise of commutating voltage dv/dtcrit 5STP 18M6500 tp = 10 ms, f = 5 Hz Tvj = 5...125 C, Note 1 f = 50 Hz, tp = 10 ms, tp1 = 250 s, Tvj = 5...125 C, Note 1, Note 2 Unit 6500 V 6500 V 4340 V 2000 V/s VAK VDRM,VRRM tp1 VDWM,VRWM tp t Exp. to 4340 V, Tvj = 125 C Characteristic values Parameter Symbol Conditions Forward leakage current IDRM Reverse leakage current IRRM min typ max Unit VDRM, Tvj = 125 C 600 mA VRRM, Tvj = 125 C 600 mA Note 1: Voltage de-rating factor of 0.11% per C is applicable for Tvj below +5 C. Note 2: Recommended minimum ratio of VDRM / VDWM or VRRM / VRWM = 2. See App. Note 5SYA 2051. Mechanical data Maximum rated values 1) Parameter Symbol Conditions min typ max Unit Mounting force FM 63 70 84 kN Acceleration a Device unclamped 50 m/s 2 Acceleration a Device clamped 100 m/s 2 max Unit 1.85 kg 35.5 mm Characteristic values Parameter Symbol Conditions Weight m Housing thickness H Surface creepage distance DS 45 mm Air strike distance Da 21 mm FM = 70 kN, Ta = 25 C min typ 35.1 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5STP 18M6500 On-state Maximum rated values 1) Parameter Symbol Conditions Average on-state current IT(AV)M RMS on-state current IT(RMS) Peak non-repetitive surge current ITSM Limiting load integral I2t Peak non-repetitive surge current ITSM Limiting load integral I2t min typ Half sine wave, Tc = 70 C tp = 10 ms, Tvj = 125 C, sine half wave, VD = VR= 0 V, after surge max Unit 1800 A 2820 A 3 50*10 A 6 A2s 3 A 4.35*10 6 A2s max Unit 1.9 V 1.2 V 0.43 m Tvj = 25 C 125 mA Tvj = 125 C 75 mA Tvj = 25 C 500 mA Tvj = 125 C 250 mA max Unit Cont. f = 50 Hz 250 A/s Cont. f = 1 Hz 1000 A/s 12.5*10 tp = 10 ms, Tvj = 125 C, sine half wave, VR= 0.6*VRRM, after surge 29.5*10 Characteristic values Parameter Symbol Conditions On-state voltage VT Threshold voltage V(T0) Slope resistance rT Holding current IH Latching current IL Switching Maximum rated values min typ IT = 1600 A, Tvj = 125 C IT = 1000 A - 3000 A, Tvj= 125 C 1) Parameter Symbol Conditions min Critical rate of rise of on-state di/dtcrit current Tvj = 125 C, ITRM = 2000 A, VD 0.67*VDRM, IFG = 2 A, tr = 0.5 s Circuit-commutated turn-off time Tvj = 125 C, ITRM = 2000 A, VR = 200 V, diT/dt = -1.5 A/s, VD 0.67VDRM, dvD/dt = 20 V/s tq typ 800 s Characteristic values Parameter Symbol Conditions min Reverse recovery charge Qrr Reverse recovery current IRM Gate turn-on delay time tgd Tvj = 125 C, ITRM = 2000 A, VR = 200 V, diT/dt = -1.5 A/s typ max Unit 2400 3600 As 40 80 A 3 s Tvj = 25 C, VD = 0.4VRM, IFG = 2 A, tr = 0.5 s ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1010-05 Aug. 13 page 2 of 7 5STP 18M6500 Triggering Maximum rated values 1) Parameter Symbol Conditions Peak forward gate voltage min typ max Unit VFGM 12 V Peak forward gate current IFGM 10 A Peak reverse gate voltage VRGM 10 V Average gate power loss PG(AV) see Fig. 7 W Characteristic values Parameter Symbol Conditions Gate-trigger voltage VGT Gate-trigger current min typ max Unit Tvj = 25 C 2.6 V IGT Tvj = 25 C 400 mA Gate non-trigger voltage VGD VD = 0.4*VDRM, Tvjmax = 125 C 0.3 V Gate non-trigger current IGD VD = 0.4*VDRM, Tvjmax = 125 C 10 mA Thermal Maximum rated values 1) Parameter Symbol Conditions min Operating junction temperature range Tvj Storage temperature range Tstg -40 Symbol Conditions min typ max Unit 125 C 140 C max Unit Characteristic values Parameter Thermal resistance junction to case, Thermal resistance case to heatsink, typ Rth(j-c) Double-side cooled Fm = 63... 84 kN 9 K/kW Rth(j-c)A Anode-side cooled Fm = 63... 84 kN 18 K/kW Rth(j-c)C Cathode-side cooled Fm = 63... 84 kN 18 K/kW Rth(c-h) Double-side cooled Fm = 63... 84 kN 1.5 K/kW Rth(c-h) Single-side cooled Fm = 63... 84 kN 3 K/kW Analytical function for transient thermal impedance: n Zth(j - c)(t) = R i (1- e- t/ i ) i 1 i 1 2 3 4 Ri(K/kW) 6.280 1.070 1.090 0.520 i(s) 0.8956 0.1606 0.0256 0.0093 Fig. 1 Transient thermal impedance (junction-tocase) vs. time ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1010-05 Aug. 13 page 3 of 7 5STP 18M6500 Max. on-state characteristic model: VT125 ATvj BTvj IT CTvj ln( IT 1) DTvj IT A125 -3 871.4*10 Valid for IT = 400 - 6000 A B125 C125 D125 -6 -3 -3 93.0*10 -20.8*10 25.66*10 Fig. 2 On-state voltage characteristics Fig. 3 On-state voltage characteristics, Tvj_start = 125 C, 10 ms sine half wave Fig. 4 On-state power dissipation vs. mean on-state current, turn-on losses excluded Fig. 5 Max. permissible case temperature vs. mean on-state current, switching losses ignored ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1010-05 Aug. 13 page 4 of 7 5STP 18M6500 IG (t) 100 % 90 % IGM IGM IGon diG/dt tr tp(IGM) 2..5 A 1.5 IGT 2 A/s 1 s 5...20 s diG/dt IGon 10 % tr t tp (IGM) tp (IGon) Fig. 6 Recommended gate current waveform Fig. 7 Max. peak gate power loss Fig. 8 Reverse recovery charge vs. decay rate of on-state current Fig. 9 Peak reverse recovery current vs. decay rate of on-state current ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1010-05 Aug. 13 page 5 of 7 5STP 18M6500 Turn-on and Turn-off losses Fig. 10 Turn-on energy, half sinusoidal waves Fig. 11 Turn-on energy, rectangular waves Fig. 12 Turn-off energy, half sinusoidal waves Fig. 13 Turn-off energy, rectangular waves IT(t) Total power loss for repetitive waveforms: IT(t), V(t) PTOT PT Won f Woff f -diT/dt where t Qrr V(t) -IRRM -V0 T 1 PT IT VT (IT ) dt T0 -dv/dtcom -VRRM Fig. 14 Current and voltage waveforms at turn-off Fig. 15 Relationships for power loss ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1010-05 Aug. 13 page 6 of 7 5STP 18M6500 Fig. 16 Device Outline Drawing Related documents: 5SYA 2020 5SYA 2049 5SYA 2051 5SYA 2034 5SYA 2036 5SZK 9104 5SZK 9105 Design of RC-Snubber for Phase Control Applications Voltage definitions for phase control thyristors and diodes Voltage ratings of high power semiconductors Gate-Drive Recommendations for PCT's Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please contact factory Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on request, please contact factory Please refer to http://www.abb.com/semiconductors for current version of documents. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1010-05 Aug. 13