HEXFET® Power MOSFET
IRF6100PbF
Parameter Max. Units
VDS Drain- Source Voltage -20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V ±5.1
ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V ±3.5 A
IDM Pulsed Drain Current ±35
PD @TA = 25°C Power Dissipation2.2
PD @TA = 70°C Power Dissipation1.4
Linear Derating Factor 17 mW/°C
VGS Gate-to-Source Voltage ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Absolute Maximum Ratings
W
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True chip-scale packaging is available from International
Rectifier. Through the use of advanced processing tech-
niques, and a unique packaging concept, extremely low
on-resistance and the highest power densities in the
industry have been made available for battery and load
management applications. These benefits, combined with
the ruggedized device design , that International Rectifier
is well known for, provides the designer with an ex-
tremely efficient and reliable device.
The FlipFET™ package, is one-third the footprint of a
comparable SOT-23 package and has a profile of less
than .8mm. Combined with the low thermal resistance of
the die level device, this makes the FlipFET™ the best
device for application where printed circuit board space is
at a premium and in extremely thin application environ-
ments such as battery packs, cell phones and PCMCIA
cards.
Description
lUltra Low RDS(on) per Footprint Area
lLow Thermal Resistance
l P-Channel MOSFET
lOne-third Footprint of SOT-23
lSuper Low Profile (<.8mm)
lAvailable Tested on Tape & Reel
lLead-Free
FlipFET ISOMETRIC
Symbol Parameter Typ. Max. Units
RθJA Junction-to-Ambient56.5 °C/W
RθJ-PCB Junction-to-PCB mounted 35 –––
Thermal Resistance
05/17/06
VDSS RDS(on) max ID
-20V 0.065Ω@VGS = -4.5V -5.1A
0.095Ω@VGS = -2.5V -4.1A
S
D
G
PD - 96012B
IRF6100PbF
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– -0.010 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.065 VGS = -4.5V, ID = -5.1A
––– 0.095 VGS = -2.5V, ID = -4.1A
VGS(th) Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 9.8 ––– ––– S VDS = -10V, ID = -5.1A
––– ––– -1.0 µA VDS = -20V, VGS = 0V
––– ––– -25 VDS = -16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -12V
QgTotal Gate Charge ––– 14 21 ID = -5.1A
Qgs Gate-to-Source Charge ––– 1.9 2.9 nC VDS = -16V
Qgd Gate-to-Drain ("Miller") Charge ––– 5.0 7.5 VGS = -5.0V
td(on) Turn-On Delay Time ––– 12 ––– VDD = -10V
trRise Time ––– 12 ––– ID = -1.0A
td(off) Turn-Off Delay Time ––– 50 ––– RG = 5.8Ω
tfFall Time ––– 50 ––– VGS = -4.5V
Ciss Input Capacitance ––– 1230 ––– VGS = 0V
Coss Output Capacitance ––– 250 ––– pF VDS = -15V
Crss Reverse Transfer Capacitance ––– 180 ––– ƒ = 1.0MHz, See Fig. 5
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.2A, VGS = 0V
trr Reverse Recovery Time ––– 48 72 ns TJ = 25°C, IF = -2.2A
Qrr Reverse RecoveryCharge ––– 34 51 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
-33
-2.2
A
When mounted on 1 inch square 2oz copper on FR-4.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
Ω
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
ns
S
D
G
IRF6100PbF
www.irf.com 3
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-4.5V
-5.1A
Fig 4. Normalized On-Resistance
Vs. Temperature
0.01
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-7.00V
-5.00V
-4.50V
-2.50V
-1.80V
-1.50V
-1.20V
-1.00V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.00V
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-7.00V
-5.00V
-4.50V
-2.50V
-1.80V
-1.50V
-1.20V
-1.00V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.00V
1
10
100
1.0 1.5 2.0 2.5 3.0
V = -15V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
IRF6100PbF
4www.irf.com
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
0 4 8 12 16 20 24
0
2
4
6
8
10
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D-5.1A
V =-16V
DS
0.1
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
400
800
1200
1600
2000
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
0.1
1
10
100
0.0 0.4 0.8 1.2 1.6 2.0 2.4
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
IRF6100PbF
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
5.0
6.0
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
VDS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
IRF6100PbF
6www.irf.com
Fig 13. Typical On-Resistance Vs. Drain
Current
Fig 12. Typical On-Resistance Vs. Gate
Voltage
Fig 14b. Gate Charge Test Circuit
Fig 14a. Basic Gate Charge Waveform
QG
QGS QGD
VG
Charge
D.U.T. VDS
ID
IG
-3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
1.0 2.0 3.0 4.0 5.0 6.0 7.0
-VGS, Gate -to -Source Voltage (V)
0.03
0.04
0.05
0.06
0.07
0.08
RDS(on), Drain-to -Source On Resistance (Ω)
ID = -5.1A
0 10203040
-ID , Drain Current (A)
0.04
0.08
0.12
0.16
RDS (on) , Drain-to-Source On Resistance (Ω)
VGS = -2.5V
VGS = -4.5V
IRF6100PbF
www.irf.com 7
Fig 15. Threshold Voltage Vs. Temperature Fig 16. Maximum Power Dissipation
Vs. Time
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
-VGS(th) Gate threshold Voltage (V)
ID = -250µA
0.001 0.010 0.100 1.000 10.000
Pulsewidth (sec)
0
4
8
12
16
20
Power Dissipation (W)
FlipFET Part Marking Information
IRF6100PbF
8www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/06
FlipFET Outline Dimension and Tape and Reel
(Refer to application note AN-1011 for details about board mounting the 0.8mm ball pitch Flip FET)
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