DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct-2000 SCILLC, 2000 Previous Edition 1995 "All Rights Reserved'' This book presents technical data for ON Semiconductor's broad line of rectifiers. Complete specifications are provided in the form of data sheets and accompanying selection guides provide a quick comparison of characteristics to simplify the task of choosing the best device for a circuit. The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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A Preferred type is a device which is recommended as a first choice for future use. These devices are "preferred" by virtue of their performance, price, functionality, or combination of attributes which offer the overall "best" value to the customer. This category contains both advanced and mature devices which will remain available for the foreseeable future. "Preferred devices" are denoted below the device part numbers on the individual data sheets. Device types identified as "current" may not be a first choice for new designs, but will continue to be available because of the popularity and/or standardization or volume usage in current production designs. These products can be acceptable for new designs but the preferred types are considered better alternatives for long term usage. Any device that has not been identified as a "preferred device" is a "current" device. This data book does not contain any "Not Recommended for New Design" devices. POWERTAP, MEGAHERTZ, SCANSWITCH, Surmetic and SWITCHMODE are trademarks of Semiconductor Components Industries, LLC (SCILLC). Thermal Clad is a trademark of the Bergquist Company. All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders. http://onsemi.com 3 Table of Contents Page Chapter 1 -- Master Index . . . . . . . . . . . . . . . . . . . . . . . . . 5 Alphanumeric Listing of All Rectifier Devices Page Chapter 6 -- Tape and Reel/ Packaging Specifications . . . . . . . . . . . . . . . . . . . . . . 519 Chapter 2 -- Product Selector Guide . . . . . . . . . . . . . . 13 Rectifier Selector Guide Arranged by Package and Technology Chapter 7 -- Surface Mount Information . . . . . . . . . . 525 Chapter 3 -- Schottky Data Sheets . . . . . . . . . . . . . . . 27 See the Master Index for Page Numbering Information Chapter 9 -- Package Outline Dimensions . . . . . . . . 537 Chapter 8 -- TO-220 Leadform Information . . . . . . . 531 Chapter 10 -- AR598: Avalanche Capability of Todays Power Semiconductors . . . . . . . . . . . . . . . . . 549 Chapter 4 -- Ultrafast Data Sheets . . . . . . . . . . . . . . . 285 See the Master Index for Page Numbering Information Chapter 11 -- Cross Reference Guide . . . . . . . . . . . . 557 Cross Reference Table for Industry Equivalents Chapter 5 -- Standard and Fast Recovery Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 445 See the Master Index for Page Numbering Information http://onsemi.com 4 CHAPTER 1 Master Index http://onsemi.com 5 ALPHANUMERIC MASTER INDEX Device 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4933 1N4934 1N4935 1N4936 1N4937 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 MBR0520LT1 MBR0520LT3 MBR0530T1 MBR0530T3 MBR0540T1 MBR0540T3 MBR10100 MBR1035 MBR1045 MBR1060 MBR1080 MBR1090 MBR1100 MBR150 MBR1535CT MBR1545CT MBR160 MBR16100CT Function Page 1.0 Amp, 50 Volt Axial Lead Standard Recovery Rectifier . . . . . . . . . . . . . . . . . . . . . . . 447 1.0 Amp, 100 Volt Axial Lead Standard Recovery Rectifier . . . . . . . . . . . . . . . . . . . . . . 447 1.0 Amp, 200 Volt Axial Lead Standard Recovery Rectifier . . . . . . . . . . . . . . . . . . . . . . 447 1.0 Amp, 400 Volt Axial Lead Standard Recovery Rectifier . . . . . . . . . . . . . . . . . . . . . . 447 1.0 Amp, 600 Volt Axial Lead Standard Recovery Rectifier . . . . . . . . . . . . . . . . . . . . . . 447 1.0 Amp, 800 Volt Axial Lead Standard Recovery Rectifier . . . . . . . . . . . . . . . . . . . . . . 447 1.0 Amp, 1000 Volt Axial Lead Standard Recovery Rectifier . . . . . . . . . . . . . . . . . . . . . 447 1.0 Amp, 50 Volt Axial-Lead Fast-Recovery Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . 452 1.0 Amp, 100 Volt Axial-Lead Fast-Recovery Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . 452 1.0 Amp, 200 Volt Axial-Lead Fast-Recovery Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . 452 1.0 Amp, 400 Volt Axial-Lead Fast-Recovery Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . 452 1.0 Amp, 600 Volt Axial-Lead Fast-Recovery Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . 452 3.0 Amp, 50 Volt Axial-Lead Standard Recovery Rectifier . . . . . . . . . . . . . . . . . . . . . . . 449 3.0 Amp, 100 Volt Axial-Lead Standard Recovery Rectifier . . . . . . . . . . . . . . . . . . . . . . 449 3.0 Amp, 200 Volt Axial-Lead Standard Recovery Rectifier . . . . . . . . . . . . . . . . . . . . . . 449 3.0 Amp, 400 Volt Axial-Lead Standard Recovery Rectifier . . . . . . . . . . . . . . . . . . . . . . 449 3.0 Amp, 600 Volt Axial-Lead Standard Recovery Rectifier . . . . . . . . . . . . . . . . . . . . . . 449 3.0 Amp, 800 Volt Axial-Lead Standard Recovery Rectifier . . . . . . . . . . . . . . . . . . . . . . 449 3.0 Amp, 1000 Volt Axial-Lead Standard Recovery Rectifier . . . . . . . . . . . . . . . . . . . . . 449 1 Amp, 20 Volt Axial Lead Schottky Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146 1 Amp, 30 Volt Axial Lead Schottky Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146 1 Amp, 40 Volt Axial Lead Schottky Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146 3 Amp, 20 Volt Axial Lead Schottky Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159 3 Amp, 30 Volt Axial Lead Schottky Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159 3 Amp, 40 Volt Axial Lead Schottky Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159 0.5 Amp, 20 Volt Surface Mount Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . 28 0.5 Amp, 20 Volt Surface Mount Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . 28 0.5 Amp, 30 Volt Surface Mount Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . 31 0.5 Amp, 30 Volt Surface Mount Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . 31 0.5 Amp, 40 Volt Surface Mount Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . 34 0.5 Amp, 40 Volt Surface Mount Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . 34 10 Amp, 100 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 212 10 Amp, 35 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 207 10 Amp, 45 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 207 10 Amp, 60 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 212 10 Amp, 80 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 212 10 Amp, 90 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 212 1 Amp, 100 Volt Axial Lead Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156 1 Amp, 50 Volt Axial Lead Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152 15 Amp, 35 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 15 Amp, 45 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 1 Amp, 60 Volt Axial Lead Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152 16 Amp, 100 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177 http://onsemi.com 6 Device MBR1635 MBR1645 MBR20100CT MBR20200CT MBR2030CTL MBR2045CT MBR2060CT MBR2080CT MBR2090CT MBR2515L MBR2535CT MBR2535CTL MBR2545CT MBR3045PT MBR3045ST MBR3045WT MBR3100 MBR340 MBR350 MBR360 MBR4015LWT MBR4045PT MBR4045WT MBR5025L MBR6045PT MBR6045WT MBR735 MBR745 MBRA130LT3 MBRA140T3 MBRB1045 MBRB1545CT MBRB20100CT MBRB20200CT MBRB2060CT MBRB2515L MBRB2535CTL MBRB2545CT MBRB3030CT MBRB3030CTL MBRB4030 MBRD1035CTL MBRD320 MBRD330 MBRD340 MBRD350 Function Page 16 Amp, 35 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215 16 Amp, 45 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215 20 Amp, 100 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 189 20 Amp, 200 Volt SWITCHMODE Dual Schottky Power Rectifier . . . . . . . . . . . . . . . . . 192 20 Amp, 30 Volt SWITCHMODE Dual Schottky Power Rectifier . . . . . . . . . . . . . . . . . . 180 20 Amp, 45 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184 20 Amp, 60 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 189 20 Amp, 80 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 189 20 Amp, 90 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 189 25 Amp, 15 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 218 25 Amp, 35 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198 25 Amp, 35 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195 25 Amp, 45 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198 30 Amp, 45 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 232 30 Amp, 45 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 201 30 Amp, 45 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 241 3 Amp, 100 Volt Axial Lead Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171 3 Amp, 40 Volt Axial Lead Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165 3 Amp, 50 Volt Axial Lead Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168 3 Amp, 60 Volt Axial Lead Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168 40 Amp, 15 Volt SWITCHMODE Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . 244 40 Amp, 45 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 235 40 Amp, 45 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 248 50 Amp, 25 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 239 60 Amp, 45 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 237 60 Amp, 45 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 7.5 Amp, 35 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 204 7.5 Amp, 45 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 204 1 Amp, 30 Volt Surface Mount Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . 58 1 Amp, 40 Volt Surface Mount Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . 61 10 Amp, 45 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113 15 Amp, 45 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116 20 Amp, 100 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 20 Amp, 200 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122 20 Amp, 60 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118 25 Amp, 15 Volt SWITCHMODE Power Rectifier OR'ing Function Diode . . . . . . . . . . 125 25 Amp, 35 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127 30 Amp, 45 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 30 Amp, 30 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132 30 Amp, 30 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136 40 Amp, 30 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142 10 Amp, 35 Volt SWITCHMODE Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . 108 3 Amp, 20 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97 3 Amp, 30 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97 3 Amp, 40 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97 3 Amp, 50 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97 http://onsemi.com 7 Device MBRD360 MBRD620CT MBRD630CT MBRD640CT MBRD650CT MBRD660CT MBRD835L MBRF20100CT MBRF20200CT MBRF2060CT MBRF2545CT MBRM120ET3 MBRM120LT3 MBRM130LT3 MBRM140T3 MBRP20030CTL MBRP20035L MBRP20045CT MBRP20060CT MBRP30035L MBRP30045CT MBRP30060CT MBRP400100CTL MBRP40030CTL MBRP40045CTL MBRP60035CTL MBRS1100T3 MBRS120T3 MBRS130LT3 MBRS130T3 MBRS140LT3 MBRS140T3 MBRS1540T3 MBRS190T3 MBRS2040LT3 MBRS240LT3 MBRS320T3 MBRS330T3 MBRS340T3 MBRS360T3 MR2502 MR2504 MR2510 MR2520L MR2535L MR2835S Function Page 3 Amp, 60 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97 6 Amp, 20 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101 6 Amp, 30 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101 6 Amp, 40 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101 6 Amp, 50 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101 6 Amp, 60 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101 8 Amp, 35 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 20 Amp, 100 Volt SWITCHMODE Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . 223 20 Amp, 200 Volt SWITCHMODE Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . 226 20 Amp, 60 Volt SWITCHMODE Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . 220 25 Amp, 45 Volt SWITCHMODE Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . 229 1 Amp, 20 Volt Surface Mount Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . 38 1 Amp, 20 Volt Surface Mount Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . 43 1 Amp, 30 Volt Surface Mount Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . 48 1 Amp, 40 Volt Surface Mount Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . 53 200 Amp, 30 Volt POWERTAP II SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . 252 200 Amp, 35 Volt SWITCHMODE Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . 280 200 Amp, 45 Volt POWERTAP II SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . 262 200 Amp, 60 Volt POWERTAP II SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . 270 300 Amp, 35 Volt SWITCHMODE Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . 282 300 Amp, 45 Volt POWERTAP II SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . 265 300 Amp, 60 Volt POWERTAP II SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . 275 400 Amp, 100 Volt POWERTAP II SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . 278 400 Amp, 30 Volt POWERTAP II SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . 255 400 Amp, 45 Volt POWERTAP II SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . 268 600 Amp, 35 Volt POWERTAP II SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . 259 1 Amp, 100 Volt Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 1 Amp, 20 Volt Surface Mount Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . 64 1 Amp, 30 Volt Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67 1 Amp, 30 Volt Surface Mount Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . 70 1 Amp, 40 Volt Surface Mount Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . 76 1 Amp, 40 Volt Surface Mount Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . 73 1.5 Amp, 40 Volt Surface Mount Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . 83 1 Amp, 90 Volt Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 2 Amp, 40 Volt Surface Mount Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . 90 2 Amp, 40 Volt Surface Mount Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . 87 3 Amp, 20 Volt Surface Mount Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . 94 3 Amp, 30 Volt Surface Mount Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . 94 3 Amp, 40 Volt Surface Mount Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . 94 3 Amp, 60 Volt Surface Mount Schottky Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . 94 25 Amp, 200 Volt Medium-Current Silicon Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . 463 25 Amp, 400 Volt Medium-Current Silicon Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . 463 25 Amp, 1000 Volt Medium-Current Silicon Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . 463 Overvoltage Transient Suppressor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 496 Medium Current Overvoltage Transient Suppressor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 501 Overvoltage Transient Suppressor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 506 http://onsemi.com 8 Device MR3025 MR3227 MR4027 MR4045 MR750 MR751 MR752 MR754 MR756 MR760 MR850 MR851 MR852 MR854 MR856 MRA4003T3 MRA4004T3 MRA4005T3 MRA4006T3 MRA4007T3 MRS1504T3 MSR1560 MSR860 MSRD620CT MSRP10040 MUR10120E MUR10150E MUR105 MUR110 MUR1100E MUR115 MUR120 MUR130 MUR140 MUR1510 MUR1515 MUR1520 MUR1540 MUR1560 MUR160 MUR1610CT MUR1615CT MUR1620CT MUR1620CTR MUR1640CT MUR1660CT Function Page 25 Amp, 250 Volt Medium-Current Silicon Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . Automotive Transient Voltage Suppressor (20-27 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . Automotive Transient Voltage Suppressor (20-27 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . Automotive Transient Voltage Suppressor (34-45 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 Volt High Current Lead Mounted Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 Volt High Current Lead Mounted Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 Volt High Current Lead Mounted Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 Volt High Current Lead Mounted Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 Volt High Current Lead Mounted Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000 Volt High Current Lead Mounted Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0 Amp, 50 Volt Axial Lead Fast Recovery Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0 Amp, 100 Volt Axial Lead Fast Recovery Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0 Amp, 200 Volt Axial Lead Fast Recovery Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0 Amp, 400 Volt Axial Lead Fast Recovery Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0 Amp, 600 Volt Axial Lead Fast Recovery Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Amp, 300 Volt Surface Mount Standard Recovery Power Rectifier . . . . . . . . . . . . . . . 1 Amp, 400 Volt Surface Mount Standard Recovery Power Rectifier . . . . . . . . . . . . . . . 1 Amp, 600 Volt Surface Mount Standard Recovery Power Rectifier . . . . . . . . . . . . . . . 1 Amp, 800 Volt Surface Mount Standard Recovery Power Rectifier . . . . . . . . . . . . . . . 1 Amp, 1000 Volt Surface Mount Standard Recovery Power Rectifier . . . . . . . . . . . . . . 1.5 Amp, 400 Volt Surface Mount Standard Recovery Power Rectifier . . . . . . . . . . . . . . 15 Amp, 600 Volt SWITCHMODE Soft Recovery Power Rectifier . . . . . . . . . . . . . . . . . 8 Amp, 600 Volt SWITCHMODE Soft Recovery Power Rectifier . . . . . . . . . . . . . . . . . . 6 Amp, 200 Volt SWITCHMODE Soft Ultrafast Recovery Power Rectifier . . . . . . . . . . 100 Amp, 400 Volt SWITCHMODE Soft Recovery Power Rectifier . . . . . . . . . . . . . . . . 10 Amp, 1200 Volt SCANSWITCH Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Amp, 1500 Volt SCANSWITCH Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Amp, 50 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Amp, 100 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Amp, 1000 Volt Ultrafast "E" Series SWITCHMODE Power Rectifier . . . . . . . . . . . . 1 Amp, 150 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Amp, 200 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Amp, 300 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Amp, 400 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Amp, 100 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . 15 Amp, 150 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . 15 Amp, 200 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . 15 Amp, 400 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . 15 Amp, 600 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . 1 Amp, 500 Volt SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Amp, 100 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . 8 Amp, 150 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . 8 Amp, 200 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . 16 Amp, 200 Volt SWITCHMODE Dual Ultrafast Power Rectifier . . . . . . . . . . . . . . . . . 8 Amp, 400 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . 8 Amp, 600 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . http://onsemi.com 9 470 510 513 516 484 484 484 484 484 484 454 454 454 454 454 456 456 456 456 456 459 440 366 309 438 387 390 324 324 329 324 324 324 324 393 393 393 393 393 324 402 402 402 408 402 402 Device MUR180E MUR2020R MUR2100E MUR220 MUR240 MUR260 MUR3020PT MUR3020WT MUR3040 MUR3040PT MUR3060PT MUR3060WT MUR3080 MUR405 MUR410 MUR4100E MUR415 MUR420 MUR440 MUR460 MUR480E MUR5150E MUR6040 MUR620CT MUR805 MUR810 MUR8100E MUR815 MUR820 MUR840 MUR860 MUR880E MURB1620CT MURB1660CT MURD320 MURD620CT MURF1620CT MURF1660CT MURH840CT MURH860CT MURHB840CT MURHB860CT MURHF860CT MURP20020CT MURP20040CT MURS105T3 Function Page 1 Amp, 800 Volt Ultrafast "E" Series SWITCHMODE Power Rectifier . . . . . . . . . . . . . 20 Amp, 200 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . 2 Amp, 1000 Volt Ultrafast "E" Series SWITCHMODE Power Rectifier . . . . . . . . . . . . 2 Amp, 200 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . 2 Amp, 400 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . 2 Amp, 600 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . 30 Amp, 200 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . 30 Amp, 200 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . 30 Amp, 400 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . 30 Amp, 400 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . 30 Amp, 600 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . 30 Amp, 600 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . 30 Amp, 800 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . 4 Amp, 50 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . 4 Amp, 100 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . 4 Amp, 1000 Volt Ultrafast "E" Series SWITCHMODE Power Rectifier . . . . . . . . . . . . 4 Amp, 150 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . 4 Amp, 200 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . 4 Amp, 400 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . 4 Amp, 600 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . 4 Amp, 800 Volt Ultrafast "E" Series SWITCHMODE Power Rectifier . . . . . . . . . . . . . 5 Amp, 1500 Volt SCANSWITCH Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 Amp, 400 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . 6 Amp, 200 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . 8 Amp, 50 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . 8 Amp, 100 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . 8 Amp, 1000 Volt Ultrafast "E" Series SWITCHMODE Power Rectifier . . . . . . . . . . . . 8 Amp, 150 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . 8 Amp, 200 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . 8 Amp, 400 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . 8 Amp, 600 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . 8 Amp, 800 Volt Ultrafast "E" Series SWITCHMODE Power Rectifier . . . . . . . . . . . . . 16 Amp, 200 Volt Ultrafast SWITCHMODE D2PAK Power Rectifier . . . . . . . . . . . . . . 16 Amp, 600 Volt Ultrafast SWITCHMODE D2PAK Power Rectifier . . . . . . . . . . . . . . 3 Amp, 200 Volt Ultrafast SWITCHMODE DPAK Power Rectifier . . . . . . . . . . . . . . . . 6 Amp, 200 Volt Ultrafast SWITCHMODE DPAK Power Rectifier . . . . . . . . . . . . . . . . 16 Amp, 200 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . 16 Amp, 600 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . 8 Amp, 400 Volt Ultrafast MEGAHERTZ Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . 8 Amp, 600 Volt Ultrafast MEGAHERTZ Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . 8 Amp, 400 Volt Ultrafast MEGAHERTZ D2PAK Power Rectifier . . . . . . . . . . . . . . . . . 8 Amp, 600 Volt Ultrafast MEGAHERTZ D2PAK Power Rectifier . . . . . . . . . . . . . . . . . 8 Amp, 600 Volt Ultrafast SWITCHMODE Power Rectifier . . . . . . . . . . . . . . . . . . . . . . 200 Amp, 200 Volt POWERTAP II Ultrafast SWITCHMODE Power Rectifier . . . . . . . 200 Amp, 400 Volt POWERTAP II Ultrafast SWITCHMODE Power Rectifier . . . . . . . 1 Amp, 50 Volt Surface Mount Ultrafast Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . http://onsemi.com 10 329 399 346 334 338 342 425 431 419 425 425 431 421 350 350 355 350 350 350 350 355 360 423 363 370 370 376 370 370 370 370 376 313 316 303 306 411 416 381 384 319 322 414 436 436 286 Device MURS110T3 MURS115T3 MURS120T3 MURS140T3 MURS160T3 MURS220T3 MURS230T3 MURS240T3 MURS260T3 MURS320T3 MURS340T3 MURS360T3 TRA2525 TRA2532 TRA3225 Function Page 1 Amp, 100 Volt Surface Mount Ultrafast Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . 1 Amp, 150 Volt Surface Mount Ultrafast Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . 1 Amp, 200 Volt Surface Mount Ultrafast Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . 1 Amp, 400 Volt Surface Mount Ultrafast Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . 1 Amp, 600 Volt Surface Mount Ultrafast Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . 2 Amp, 200 Volt Surface Mount Ultrafast Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . 2 Amp, 300 Volt Surface Mount Ultrafast Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . 2 Amp, 400 Volt Surface Mount Ultrafast Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . 2 Amp, 600 Volt Surface Mount Ultrafast Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . 3 Amp, 200 Volt Surface Mount Ultrafast Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . 3 Amp, 400 Volt Surface Mount Ultrafast Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . 3 Amp, 600 Volt Surface Mount Ultrafast Power Rectifier . . . . . . . . . . . . . . . . . . . . . . . . 25 Amp, 250 Volt Medium-Current Silicon Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . Overvoltage Transient Suppressor (24-32 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Amp, 250 Volt Medium-Current Silicon Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . http://onsemi.com 11 286 286 286 286 286 290 293 293 296 299 299 299 470 489 477 http://onsemi.com 12 CHAPTER 2 Selector Guide http://onsemi.com 13 Page Rectifier Numbering System . . . . . . . . . . . . . . . . . . . . . . . 15 Application Specific Rectifiers . . . . . . . . . . . . . . . . . . . . . . 16 Low VF Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 MEGAHERTZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 NEW UltraSoft Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . 16 Energy Rated Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . 16 Automotive Transient Suppressors . . . . . . . . . . . . . . . 16 SCHOTTKY Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Surface Mount Schottky . . . . . . . . . . . . . . . . . . . . . . . . 17 Axial Lead Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 TO-220 Type Schottky . . . . . . . . . . . . . . . . . . . . . . . . . 19 TO-218 Types and TO-247 Schottky . . . . . . . . . . . . . 19 POWERTAP II Schottky . . . . . . . . . . . . . . . . . . . . . . . . 20 POWERTAP III Schottky . . . . . . . . . . . . . . . . . . . . . . . . 20 NEW UltraSoft Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Ultrafast Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Surface Mount Ultrafast . . . . . . . . . . . . . . . . . . . . . . . . . 21 Axial Lead Ultrafast . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 TO-220 Type Ultrafast . . . . . . . . . . . . . . . . . . . . . . . . . 23 TO-218 Types and TO-247 Ultrafast . . . . . . . . . . . . . 24 POWERTAP II Ultrafast . . . . . . . . . . . . . . . . . . . . . . . . . 24 Fast Recovery Rectifiers/General Purpose Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Continuing investment in research and development for discrete products has created a rectifier manufacturing facility that matches the precision and versatility of the most advanced integrated circuits. As a result, ON Semiconductor's silicon rectifiers span all high tech applications with quality levels capable of passing the most stringent environmental tests . . . including those for automotive under-hood applications. Product Highlights: * Surface Mount Devices - A major thrust has been the development and introduction of a broad range of power rectifiers, Schottky and Ultrafast, 1/2 amp to 25 amp, 15 to 600 volts. * Application Specific Rectifiers - - Schottky rectifiers having lower forward voltage drop (0.3 to 0.6 volts) for use in low voltage SMPS outputs and as "OR"ing diodes. - MEGAHERTZ series for high frequency power supplies and power factor correction. - Ultrasoft rectifiers for high speed rectification. - Energy rated rectifiers with guaranteed energy handling capability. - Automotive transient suppressors. * Ultrafast rectifiers having reverse recovery times as low as 25 ns to complement the Schottky devices for higher voltage requirements in high frequency applications. * A wide variety of package options to match virtually any potential requirement. The rectifier selector section that follows has generally been arranged by package and technology. The individual tables have been sorted by voltage and current with the package types for the devices listed shown above each table. The Application Specific Rectifiers are also included in their respective tables. http://onsemi.com 14 RECTIFIER NUMBERING SYSTEM PART NUMBER KEY XXX X PREFIX XX XX IO VR (X10 EXCEPT SCHOTTKY) (TYPE DESIGNATOR) F = FULLY ISOLATED A = SURFACE MT (SMA) S = SURFACE MT (SMB/SMC) D = DPAK B = D2PAK H = MEGAHERTZ M = POWERMITE P = POWERTAP XX PACKAGING DESIGNATOR* R = REVERSE L = LOW VF E = ENERGY SUFFIX (DUAL DESIGNATOR) PREFIX KEY MUR MBR MR MSR SUFFIX KEY CT = CENTER TAP (DUAL) TO-220, POWERTAP, DPAK, D2PAK PT = CENTER TAP (DUAL) TO-218 PACKAGE WT = CENTER TAP (DUAL) TO-247 EXAMPLE: = = = = XX X ULTRA FAST RECTIFIER (SCHOTTKY) BARRIER RECTIFIER STANDARD & FAST RECOVERY ULTRASOFT MUR ULTRAFAST EXAMPLE: MBR SCHOTTKY 30 20 WT 30 AMP 200 V CENTER TAP (DUAL) TO-247 30 45 WT 30 AMP 45 V CENTER TAP (DUAL) TO-247 *For available packaging options consult Sales Office or see Data Sheet. http://onsemi.com 15 Application Specific Rectifiers Table 1. Low VF Schottky Rectifiers ,9.*, 146 %!! %3076 % !)7,+ )2+ # %3076 ): ! !)7,+ %!! 1146 ): )*/)-, ,(U ,& )$ )$ -(U )$ -(U )$ -(U )$ -(U )(0+-) "" )(0+-) """ )(0+-) """ )(0+-) "" )(0+-) "" )(0+-) "" Table 2. MEGAHERTZ Rectifiers ):.181 ,9.*, 146 %!! %3076 % !)7,+ )2+ #,14 %3076 ! !)7,+ %!! 1146 755 )236,*32+ Table 3. UltraSoft Rectifiers (For High Speed Rectification) ,9.*, 146 %!! %3076 ): % %3076 ): 755 ",* #): 146 %!! %3076 ): % !)7,+ 820,66 37,+ %3076 ! %!! 1146 &)9)0 146 %!! %3076 ): % %3076 !" 146 #): B, B, B, B, B, Table 4. Energy Rated Rectifiers ,9.*, Table 5. Automotive Transient Suppressors ,9.*, http://onsemi.com 16 SCHOTTKY Rectifiers Table 6. Surface Mount Schottky Rectifiers " 14,5,6 # ): ): ! # 1 ): ! 1 / / / / / / -% / / - / / -I67 / ' - ' -I67 / ' - / / / - / / / -% -% -% -% - -% %!! %3076 14,5,6 !)7.232+.7.32 -% -% ,9.*, ): % . # %3076 -% - - / / / / - / / / / -% -% -% -% - - - - - - - - - - - - http://onsemi.com 17 )*/)-, CASE 425-04 (SOD-123) Cathode = Band CASE 457-04 (POWERMITE) CASE 403B-01 (SMA) Cathode = Notch or Polarity Band CASE 403-03 403 03 (SMB) C th d = N Cathode Notch t h or Polarity Band CASE 403A-03 (SMC) Cathode = Notch 1 CASE 369A-13 (DPAK) 4 3 "CT" Suffix 4 1 1 4 3 3 Non-"CT" Suffix SCHOTTKY Rectifiers Table 6. Surface Mount Schottky Rectifiers (continued) ,9.*, ): % . # %3076 " 14,5,6 # ): ): ! # 1 ): ! 1 - - - - - - - - - / %!! %3076 14,5,6 !)7.232+.7.32 - / - )*/)-, 1 CASE 418B-03 418B 03 (D2PAK) 4 4 3 S ffi "CT" Suffix 1 4 3 1 3 Non-"CT" Suffix (1)I is total device current capability. O (2)V RRM unless noted (3)V RRM, TJ = 100C unless noted New Product All devices listed are ON Semiconductor preferred devices Table 7. Axial Lead Schottky Rectifiers ): % . # %3076 " 14,5,6 # ): ): ! # 1 ): ! # 1 - +# 0 - +# 0 - - +# 0 - +# 0 - +# 0 - +# 0 - +# 0 - +# 0 - - +# 0 - +# 0 %!! %3076 14,5,6 !)7.232+.7.32 - +# 0 (2)V RRM unless noted (3)V RRM, TJ = 100C unless ,9.*, noted http://onsemi.com 18 )*/)-, CASE 59-04 Plastic Cathode = Polarity Band CASE 267-03 Plastic Cathode = Polarity Band Table 8. TO-220 Thru-Hole Schottky Rectifiers %!! %3076 14,5,6 !)7.232+.7.32 ,9.*, ): % . # %3076 - ): ! # 1 ): ! 1 " # ): 14,5,6 - - - - - - - - - - - - - - - - - - - - - - - - - - RRM (3)V RRM, CASE 221A-09 221A 09 (TO-220AB) 1 (2)V )*/)-, 4 2, 2 4 3 1 2 3 4 CASE 221B-04 221B 04 (TO-220AC) 1 4 3 1 3 CASE 221D-02 FULL PAK 1 1 2 2 3 3 unless noted TJ = 100C unless noted Indicates UL Recognized - File #E69369 Table 9. TO-218 and TO-247 Schottky Rectifiers ): % . # %3076 " 14,5,6 # ): ): ! # 1 ): ! 1 - - %!! %3076 14,5,6 !)7.232+.7.32 - - ,9.*, )*/)-, 4 CASE 340D 02 340D-02 (TO-218AC) 1 1 2, 4 2 3 3 4 CASE 340E-02 (TO-218) 1 4 3 1 3 - - - (2)V RRM unless noted (3)V RRM, TJ = 100C unless - CASE 340K-01 (TO-247) 1 1 noted http://onsemi.com 19 2, 4 3 2 3 Table 10. POWERTAP II Schottky Rectifiers " 14,5,6 # ): ): ! # 1 ): ! 1 - - - - - - - %!! %3076 14,5,6 !)7.232+.7.32 - - ,9.*, ): % . # %3076 )*/)-, CASE 357C-03 POWERTAP 2 1 1 3 3 2 Cathode = Mounting Plate Anode = Terminal (1)I is total device current capability. O (2)V RRM unless noted (3)V RRM, TJ = 100C unless noted Table 11. POWERTAP III Schottky Rectifiers %!! %3076 14,5,6 !)7.232+.7.32 - ,9.*, ): % . # %3076 " 14,5,6 # ): ): ! # ): ! # )*/)-, CASE 357D-01 POWERTAP 1 - 2 (1)I is total device current capability. O (2)V RRM unless noted (3)V RRM, TJ = 100C unless noted New Product NEW UltraSoft Rectifiers Table 12. UltraSoft Rectifiers (For High Speed Rectification) %!! %3076 14,5,6 !)7.232+.7.32 - ,9.*, ): % . # %3076 755 ",* # ): ): ! # ): ! # )*/)-, CASE 369A-13 (DPAK) 1 4 1 3 - - 3 4 CASE 221B-04 Style 1 1 4 3 1 3 - CASE 357D-01 POWERTAP 1 2 (1)I is total device current capability. O (2)V RRM unless noted (3)V RRM, TJ = 150C unless noted New Product http://onsemi.com 20 4 Ultrafast Rectifiers Table 13. Surface Mount Ultrafast Rectifiers ): 755 26 ): % . # %3076 " 14,5,6 # ): ): ! # ): ! )*/)-, -% -% -% -% -% - - - - -% -% -% -% %!! %3076 14,5,6 !)7.232+.7.32 -% ,9.*, )*/)-, SMB Cathode = Polarity Band SMC Cathode = Notch DPAK 1 4 - 1 "CT" Suffix 3 -% -% -% - (1)I is total device current capability. O (2)V RRM unless noted (4)V RRM, TJ = 150C unless noted New Product http://onsemi.com 21 4 3 D2PAK 4 1 4 3 1 3 Non-"CT" S ffi Suffix Table 14. Axial Lead Ultrafast Rectifiers ): 755 26 ): % . # %3076 " 14,5,6 # ): ): ! # ): ! - - - +# 0 - - - +# 0 %!! %3076 14,5,6 !)7.232+.7.32 ,9.*, - - - +# 0 - - - - - - - - +# 0 - - +# 0 - - +# 0 (2)V RRM unless noted (4)VRRM, TJ = 150C unless noted http://onsemi.com 22 )*/)-, CASE 59-04 Plastic Cathode = Polarity Band 267 03 CASE 267-03 Plastic Cathode = Polarity Band Table 15. TO-220 Ultrafast and MEGAHERTZ Rectifiers ): 755 26 ): % . # %3076 " 14,5,6 # ): ): ! # ): ! - - 1 - 3 - - 1 - 3 - - - - - - - - - - - - - - %!! %3076 14,5,6 !)7.232+.7.32 - ,9.*, - - - - - - - - (1)I is total device capability O (2)V RRM unless noted Indicates UL Recognized - File #E69369 New Product (4)VRRM, TJ = 150C unless noted http://onsemi.com 23 )*/)-, CASE 221A-09 (TO-220AB) (TO 220AB) 4 2, 2 4 1 2 3 2, 4 2 MUR1620CTR Only CASE 221B-04 221B 04 (TO-220AC) 4 1 4 3 1 3 CASE 221D-02 Table 16. TO-218 and TO-247 Ultrafast Rectifiers %!! %3076 14,5,6 !)7.232+.7.32 - ,9.*, ): 755 26 ): % . # %3076 " 14,5,6 # ): ): ! # ): ! 1 )*/)-, CASE 340K-01 (TO-247) 1 2 2, 4 3 - - - 1 2 3 CASE 340D-02 (TO-218AC) 2,, 4 3 - 4 1 1 2 3 - - - CASE 340E-02 (TO-218) 4 1 4 3 1 3 (1)I is total device capability O (2)V RRM unless noted (4)VRRM, TJ = 150C unless noted Table 17. POWERTAP II Ultrafast Rectifiers %!! %3076 14,5,6 !)7.232+.7.32 - ,9.*, ): 755 26 ): % . # %3076 " 14,5,6 # ): ): ! # ): ! 1 )*/)-, CASE 357C-03 POWERTAP 2 1 - 1 3 3 2 Cathode = Mounting Plate Anode = Terminal (1)I is total device current O (2)V RRM unless noted capability. (4)V RRM, TJ = 150C unless noted New Product http://onsemi.com 24 Fast Recovery Rectifiers/General-Purpose Rectifiers Table 18. Fast Recovery Rectifiers/General Purpose Rectifiers ): % . # %3076 ): 755 26 " 14,5,6 # ): ): ! # ): ! -% -% -% -% -% %!! %3076 14,5,6 !)7.232+.7.32 -% ,9.*, - - - - - - - - - - - - -% -% -% -% -% -% -% - - - - +# 0 - +# 0 - +# 0 - +# 0 - +# 0 - +# 0 - - - - - (2)V RRM (8)Must (3)V RRM, (9)Overvoltage unless noted TJ = 100C unless noted (7)Package Size: 0.120" max diameter by 0.260" length. be derated for reverse power dissipation. See data sheet. Transient Suppressor: 24-32 volts avalanche voltage. New Product http://onsemi.com 25 )*/)-, CASE 403A-03 SMB CASE 403B-01 SMA Cathode = Notch CASE 59-03(7) Plastic Cathode = Polarity Band CASE 267-03 267 03 Pl i Plastic Cathode = Polarity Band CASE 194-04 Plastic Cathode indicated b di by diode d symbol b l CASE 193-04 193 04 Plastic Cathode = Polarity Band Table 19. Overvoltage Transient Suppressors ): % # %3076 %!! %3076 %! %3076 %! %3076 14,5,6 " 14,5,6 # ): !" 14,5,6 ): ! -% " - " - " - " / - 6C9 " / - 6C9 " / - 6C9 " / ,9.*, )*/)-, CASE 194-04 Plastic Cathode = Diode Symbol CASE 193-04 Plastic Cathode = Polarity Band CASE 460-02 Top Can Cathode = Terminal (1)At (5)Time (2)At (6)Time Ir = 100 mA, 25C Ir = 90 A, Tc = 150C, PW = 80 S (3)At Ir = 80 A, Tc = 85C, PW = 80 S (4)At Ir = 80 A, Tc = 25C, PW = 80 S (7)At Constant = 10 mS, 25C Constant = 80 mS, 25C VRRM, Tj = 25C unless noted http://onsemi.com 26 CASE 193A-02 Button Can N = Anode to Case P = Cathode to Case CHAPTER 3 Schottky Data Sheets http://onsemi.com 27 Preferred Devices 63)$&( 1605 &+155-: 18(3 (&5,),(3 Plastic SOD-123 Package The Schottky Power Rectifier employs the Schottky Barrier principle with a barrier metal that produces optimal forward voltage drop-reverse current tradeoff. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package provides an alternative to the leadless 34 MELF style package. These state-of-the-art devices have the following features: * * * * * Guardring for Stress Protection Very Low Forward Voltage (0.38 V Max @ 0.5 A, 25C) 125C Operating Junction Temperature Epoxy Meets UL94, VO at 1/8 Package Designed for Optimal Automated Board Assembly http://onsemi.com SCHOTTKY BARRIER RECTIFIER 0.5 AMPERES 20 VOLTS Mechanical Characteristics * Reel Options: MBR0520LT1 = 3,000 per 7 reel/8 mm tape. * * * * * * Reel Options: MBR0520LT3 = 10,000 per 13 reel/8 mm tape. Device Marking: B2 Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds SOD-123 CASE 425 STYLE 1 MARKING DIAGRAM B2 B2 = Device Code MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 V Average Rectified Forward Current (Rated VR, TL = 90C) IF(AV) 0.5 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 5.5 A Storage Temperature Range Tstg -65 to +125 TJ -65 to +125 C dv/dt 1000 V/s Operating Junction Temperature Voltage Rate of Change (Rated VR) Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 3 ORDERING INFORMATION Device C 28 Package Shipping MBR0520LT1 SOD-123 3000/Tape & Reel MBR0520LT3 SOD-123 10,000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MBR0520LT1/D MBR0520LT1, MBR0520LT3 THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Resistance -- Junction to Ambient (Note 1.) RJA 206 C/W Thermal Resistance -- Junction to Lead RJL 150 C/W ELECTRICAL CHARACTERISTICS vF Maximum Instantaneous Forward Voltage (Note 2.) (iF = 0.1 Amps) (iF = 0.5 Amps) IR Maximum Instantaneous Reverse Current (Note 2.) (VR = 10 V) (Rated dc Voltage = 20 V) TJ = 25C TJ = 100C 0.300 0.385 0.220 0.330 TJ = 25C TJ = 100C 75 A 250 A 5 mA 8 mA Volts mA -# " ++/+,.++'-SR >"',-'-'(.,(+0+.++'-&), 1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. Q KQ "',-'-'(., (+0+ /(%- /(%-, -# Figure 1. Typical Forward Voltage " ++/+,.++'-SR )"-'E /+ +/+, /(%- /(%-, Figure 2. Typical Reverse Current /+ +/+, /(%- /(%-, Q -# Q /+ +/+, /(%- /(%-, Figure 4. Typical Reverse Current Figure 3. Typical Capacitance http://onsemi.com 29 MBR0520LT1, MBR0520LT3 ) //+ )(0+",,")-"('0-- /+ (+0+.++'-&) ")$ ,*.+ 0/ "/ Q % -&)+-.+ -# ")$ Q Q "/ ,*.+ 0/ Figure 5. Current Derating (Lead) "/ /+ (+0+ .++'- &) Figure 6. Power Dissipation http://onsemi.com 30 Preferred Devices 63)$&( 1605 &+155-: 18(3 (&5,),(3 Plastic SOD-123 Package . . . using the Schottky Barrier principle with a large area metal-to-silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. These state-of-the-art devices have the following features: * * * * * Guardring for Stress Protection Low Forward Voltage 125C Operating Junction Temperature Epoxy Meets UL94, VO at 1/8 Package Designed for Optimal Automated Board Assembly http://onsemi.com SCHOTTKY BARRIER RECTIFIER 0.5 AMPERES 30 VOLTS Mechanical Characteristics * Reel Options: MBR0530T1 = 3,000 per 7 reel/8 mm tape * * * * * * Reel Options: MBR0530T3 = 10,000 per 13 reel/8 mm tape Device Marking: B3 Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds SOD-123 CASE 425 STYLE 1 MARKING DIAGRAM B3 B3 = Device Code MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 30 V Average Rectified Forward Current (Rated VR, TL = 100C) IF(AV) 0.5 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 5.5 A Storage Temperature Range Tstg -65 to +125 C TJ -65 to +125 C dv/dt 1000 V/s Operating Junction Temperature Voltage Rate of Change (Rated VR) Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 ORDERING INFORMATION 31 Device Package Shipping MBR0530T1 SOD-123 3000/Tape & Reel MBR0530T3 SOD-123 10,000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MBR0530T1/D MBR0530T1, MBR0530T3 THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Resistance -- Junction to Ambient (Note 1.) RJA 206 C/W Thermal Resistance -- Junction to Lead RJL 150 C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2.) (iF = 0.1 Amps, TJ = 25C) (iF = 0.5 Amps, TJ = 25C) vF Maximum Instantaneous Reverse Current (Note 2.) (Rated dc Voltage, TC = 25C) (VR = 15 V, TC = 25C) IR Volts 0.375 0.43 A 130 20 -# " ++/+,.++'-SR Q -# K "',-'-'(., /(%- /(%-, /+ +/+, /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current -2)"% )"-' - / E )"-'E >"',-'-'(.,(+0+.++'-&), 1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. /+ +/+, /(%- /(%-, Figure 3. Typical Capacitance http://onsemi.com 32 MBR0530T1, MBR0530T3 ) //+ )(0+",,")-"('0-- /+ (+0+.++'-&) ,*.+ 0/ "E@ "6K -# ,*.+ 0/ "E@ "6K % -&)+-.+ "/ /+ (+0+ .++'- &) Figure 4. Current Derating (Lead) Figure 5. Power Dissipation http://onsemi.com 33 63)$&( 1605 &+155-: 18(3 (&5,),(3 SOD-123 Power Surface Mount Package The Schottky Power Rectifier employs the Schottky Barrier principle with a barrier metal that produces optimal forward voltage drop-reverse current tradeoff. Ideally suited for low voltage, high frequency rectification, or as a free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package provides an alternative to the leadless 34 MELF style package. These state-of-the-art devices have the following features: * * * * Guardring for Stress Protection Very Low Forward Voltage Epoxy Meets UL94, VO at 1/8 Package Designed for Optimal Automated Board Assembly http://onsemi.com SCHOTTKY BARRIER RECTIFIER 0.5 AMPERES 40 VOLTS Mechanical Characteristics: * * * * * * * * Reel Options: 3,000 per 7 inch reel/8 mm tape Reel Options: 10,000 per 13 inch reel/8 mm tape Device Marking: B4 Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C max. for 10 Seconds SOD-123 CASE 425 STYLE 1 MARKING DIAGRAM B4 B4 = Device Code MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 40 V Average Rectified Forward Current (At Rated VR, TC = 115C) IO 0.5 ORDERING INFORMATION Device Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 115C) IFRM 1.0 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 5.5 A Tstg, TC -55 to +150 C TJ -55 to +150 C dv/dt 1000 V/s Storage/Operating Case Temperature Range Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25C) Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 4 Package Shipping MBR0540T1 SOD-123 3000/Tape & Reel MBR0540T3 SOD-123 10,000/Tape & Reel A 34 Publication Order Number: MBR0540T1/D MBR0540T1, MBR0540T3 THERMAL CHARACTERISTICS Rating Thermal Resistance - Junction-to-Lead (Note 1.) Thermal Resistance - Junction-to-Ambient (Note 2.) Symbol Value Unit Rtjl Rtja 118 206 C/W ELECTRICAL CHARACTERISTICS vF Maximum Instantaneous Forward Voltage (Note 3.) TJ = 25C TJ = 100C 0.51 0.62 0.46 0.61 TJ = 25C TJ = 100C 20 10 13,000 5,000 (iF = 0.5 A) (iF = 1 A) IR Maximum Instantaneous Reverse Current (Note 3.) (VR = 40 V) (VR = 20 V) V A ""',-'-'(.,(+0+.++'-&), > "',-'-'(.,(+0+.++'-&), 1. Mounted with minimum recommended pad size, PC Board FR4. 2. 1 inch square pad size (1 X 0.5 inch for each lead) on FR4 board. 3. Pulse Test: Pulse Width 250 s, Duty Cycle 2.0%. -# -# -# -# -# -# -# / &1"&.& "',-'-'(., (+0+ /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage " +&1"&.&+/+,.++'-&), " ++/+,.++'-&), K "',-'-'(., (+0+ /(%- /(%-, -# -# -# -# -# -# /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current http://onsemi.com 35 )( /+ )(0+",,")-"('0--, 98 +* @!O ,*.+ 0/ "E@ "D "E@ "D "E@ "D "E@ "D 98 "E@ "D "E@ "D "E@ "D "E@ "D Figure 6. Forward Power Dissipation )"-'E ,*.+ 0/ Figure 5. Current Derating -# "( /+ (+0+ .++'- &), -% % -&)+-.+ -# +-()+-"' -&)+-.+ " ( /+ (+0+.++'-&), MBR0540T1, MBR0540T3 +I?6 0 0 0 0 0 /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ = TJmax - r(t)(Pf + Pr) where TJ may be calculated from the equation: r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax - r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. http://onsemi.com 36 + - -+',"'--!+&%+,",-''(+&%"3 + - -+',"'--!+&%+,",-''(+&%"3 MBR0540T1, MBR0540T3 +I?AI +I?AGI - -"& H Figure 9. Thermal Response Junction to Lead +I?AI +I?AGI - -"& H Figure 10. Thermal Response Junction to Ambient http://onsemi.com 37 63)$&( 1605 &+155-: 18(3 (&5,),(3 POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop-reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the Powermite has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of the lowest height profiles, < 1.1 mm in the industry. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are ac/dc and dc-dc converters, reverse battery protection, and "Oring" of multiple supply voltages and any other application where performance and size are critical. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS '( -!( Features: * * * * * POWERMITE CASE 457 PLASTIC Low Profile -- Maximum Height of 1.1 mm Small Footprint -- Footprint Area of 8.45 mm2 Low VF Provides Higher Efficiency and Extends Battery Life Supplied in 12 mm Tape and Reel -- 12,000 Units per Reel Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink MARKING DIAGRAM Mechanical Characteristics: * * * * * * BCV Powermite is JEDEC Registered as D0-216AA Case: Molded Epoxy Epoxy Meets UL94, VO at 1/8 Weight: 62 mg (approximately) Device Marking: BCV Lead and Mounting Surface Temperature for Soldering Purposes. 260C Maximum for 10 Seconds BCV = Device Code ORDERING INFORMATION Device MAXIMUM RATINGS Please See the Table on the Following Page Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 4 Package Shipping MBRM120ET3 POWERMITE 12,000/Tape & Reel 38 Publication Order Number: MBRM120ET3/D MBRM120ET3 MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 20 V IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 135C) IFRM 2.0 A Non-Repetitive Peak Surge Current (Non-Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM 50 A Storage Temperature Tstg -65 to 150 C Operating Junction Temperature TJ -65 to 150 C dv/dt 10,000 V/s Rtjl Rtjtab Rtja 35 23 277 C/W Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 130C) Voltage Rate of Change (Rated VR, TJ = 25C) THERMAL CHARACTERISTICS Thermal Resistance - Junction-to-Lead (Anode) (Note 1.) Thermal Resistance - Junction-to-Tab (Cathode) (Note 1.) Thermal Resistance - Junction-to-Ambient (Note 1.) 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 and 10. ELECTRICAL CHARACTERISTICS VF Maximum Instantaneous Forward Voltage (Note 2.), See Figure 2 (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) IR Maximum Instantaneous Reverse Current (Note 2.), See Figure 4 (VR = 20 V) (VR = 10 V) (VR = 5.0 V) 2. Pulse Test: Pulse Width 250 s, Duty Cycle 2%. http://onsemi.com 39 TJ = 25C TJ = 100C 0.455 0.530 0.595 0.360 0.455 0.540 TJ = 25C TJ = 100C 10 1.0 0.5 1600 500 300 V A -# -# -# -# -# -# -# / &1"&.& "',-'-'(., (+0+ /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage " +&1"&.&+/+,.++'-&), -# -# -# -# -# K "',-'-'(., (+0+ /(%- /(%-, "++/+,.++'-&), ""',-'-'(.,(+0+.++'-&), > "',-'-'(.,(+0+.++'-&), MBRM120ET3 -# /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current http://onsemi.com 40 +* @!O 98 )( /+ )(0+",,")-"('0--, ,*.+ 0/ "E@ "D "E@ "D "E@ "D "E@ "D )"-'E "E@ "D "E@ "D "E@ "D Figure 6. Forward Power Dissipation "E@ "D 98 ,*.+ 0/ Figure 5. Current Derating -# "( /+ (+0+ .++'- &), -% % -&)+-.+ -# +-()+-"' -&)+-.+ " ( /+ (+0+.++'-&), MBRM120ET3 +I?6 0 0 0 0 0 /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ = TJmax - r(t)(Pf + Pr) where TJ may be calculated from the equation: r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax - r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. http://onsemi.com 41 + - -+',"'--!+&%+,",-''(+&%"3 MBRM120ET3 +I?AI +I?AGI - -"& H + - -+',"'--!+&%+,",-''(+&%"3 Figure 9. Thermal Response Junction to Lead +I?AI +I?AGI - -"& H Figure 10. Thermal Response Junction to Ambient http://onsemi.com 42 63)$&( 1605 &+155-: 18(3 (&5,),(3 POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop-reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the Powermite has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of the lowest height profiles, < 1.1 mm in the industry. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are ac/dc and dc-dc converters, reverse battery protection, and "Oring" of multiple supply voltages and any other application where performance and size are critical. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS '( -!( Features: * * * * * POWERMITE CASE 457 PLASTIC Low Profile -- Maximum Height of 1.1 mm Small Footprint -- Footprint Area of 8.45 mm2 Low VF Provides Higher Efficiency and Extends Battery Life Supplied in 12 mm Tape and Reel -- 12,000 Units per Reel Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink MARKING DIAGRAM Mechanical Characteristics: * * * * * * Powermite is JEDEC Registered as D0-216AA Case: Molded Epoxy Epoxy Meets UL94, VO at 1/8 Weight: 62 mg (approximately) Device Marking: BCF Lead and Mounting Surface Temperature for Soldering Purposes. 260C Maximum for 10 Seconds ORDERING INFORMATION Package Shipping MBRM120LT3 POWERMITE 12,000/Tape & Reel Please See the Table on the Following Page October, 2000 - Rev. 3 BCF = Device Code Device MAXIMUM RATINGS Semiconductor Components Industries, LLC, 2000 BCF 43 Publication Order Number: MBRM120LT3/D MBRM120LT3 MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 20 V IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 135C) IFRM 2.0 A Non-Repetitive Peak Surge Current (Non-Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM 50 A Storage Temperature Tstg -55 to 150 C Operating Junction Temperature TJ -55 to 125 C dv/dt 10,000 V/s Rtjl Rtjtab Rtja 35 23 277 C/W Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 135C) Voltage Rate of Change (Rated VR, TJ = 25C) THERMAL CHARACTERISTICS Thermal Resistance - Junction-to-Lead (Anode) (Note 1.) Thermal Resistance - Junction-to-Tab (Cathode) (Note 1.) Thermal Resistance - Junction-to-Ambient (Note 1.) 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10. ELECTRICAL CHARACTERISTICS VF Maximum Instantaneous Forward Voltage (Note 2.), See Figure 2 (IF = 0.1 A) (IF = 1.0 A) (IF = 3.0 A) IR Maximum Instantaneous Reverse Current (Note 2.), See Figure 4 (VR = 20 V) (VR = 10 V) 2. Pulse Test: Pulse Width 250 s, Duty Cycle 2%. http://onsemi.com 44 TJ = 25C TJ = 85C 0.34 0.45 0.65 0.26 0.415 0.67 TJ = 25C TJ = 85C 0.40 0.10 25 18 V mA ""',-'-'(.,(+0+.++'-&), > "',-'-'(.,(+0+.++'-&), MBRM120LT3 -# -# -# -# -# -# -# K "',-'-'(., (+0+ /(%- /(%-, / &1"&.& "',-'-'(., (+0+ /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage " +&1"&.&+/+,.++'-&), " ++/+,.++'-&), -# -# -# -# -# -# /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current http://onsemi.com 45 +* @!O 98 )( /+ )(0+",,")-"('0--, ,*.+ 0/ "E@ "D "E@ "D "E@ "D "E@ "D )"-'E ,*.+ 0/ 98 "E@ "D "E@ "D Figure 6. Forward Power Dissipation "E@ "D "E@ "D Figure 5. Current Derating -# "( /+ (+0+ .++'- &), -% % -&)+-.+ -# +-()+-"' -&)+-.+ " ( /+ (+0+.++'-&), MBRM120LT3 +I?6 0 0 0 0 0 /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ = TJmax - r(t)(Pf + Pr) where TJ may be calculated from the equation: r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax - r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. http://onsemi.com 46 + - -+',"'--!+&%+,",-''(+&%"3 MBRM120LT3 +I?AI +I?AGI - -"& H + - -+',"'--!+&%+,",-''(+&%"3 Figure 9. Thermal Response Junction to Lead +I?AI +I?AGI - -"& H Figure 10. Thermal Response Junction to Ambient http://onsemi.com 47 63)$&( 1605 &+155-: 18(3 (&5,),(3 POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop-reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the Powermite has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of the lowest height profiles, < 1.1 mm in the industry. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are ac/dc and dc-dc converters, reverse battery protection, and "Oring" of multiple supply voltages and any other application where performance and size are critical. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 30 VOLTS '( -!( Features: * * * * * POWERMITE CASE 457 PLASTIC Low Profile -- Maximum Height of 1.1 mm Small Footprint -- Footprint Area of 8.45 mm2 Low VF Provides Higher Efficiency and Extends Battery Life Supplied in 12 mm Tape and Reel -- 12,000 Units per Reel Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink MARKING DIAGRAM Mechanical Characteristics: * * * * * * BCG Powermite is JEDEC Registered as D0-216AA Case: Molded Epoxy Epoxy Meets UL94, VO at 1/8 Weight: 62 mg (approximately) Device Marking: BCG Lead and Mounting Surface Temperature for Soldering Purposes. 260C Maximum for 10 Seconds BCG = Device Code ORDERING INFORMATION Device MAXIMUM RATINGS October, 2000 - Rev. 1 Shipping MBRM130LT3 POWERMITE 12,000/Tape & Reel Please See the Table on the Following Page Semiconductor Components Industries, LLC, 2000 Package 48 Publication Order Number: MBRM130LT3/D MBRM130LT3 MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 30 V IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 135C) IFRM 2.0 A Non-Repetitive Peak Surge Current (Non-Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM 50 A Storage Temperature Tstg -55 to 150 C Operating Junction Temperature TJ -55 to 125 C dv/dt 10,000 V/s Rtjl Rtjtab Rtja 35 23 277 C/W Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 135C) Voltage Rate of Change (Rated VR, TJ = 25C) THERMAL CHARACTERISTICS Thermal Resistance - Junction-to-Lead (Anode) (Note 1.) Thermal Resistance - Junction-to-Tab (Cathode) (Note 1.) Thermal Resistance - Junction-to-Ambient (Note 1.) 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10. ELECTRICAL CHARACTERISTICS VF Maximum Instantaneous Forward Voltage (Note 2.), See Figure 2 (IF = 0.1 A) (IF = 1.0 A) (IF = 3.0 A) IR Maximum Instantaneous Reverse Current (Note 2.), See Figure 4 (VR = 30 V) (VR = 20 V) (VR = 10 V) 2. Pulse Test: Pulse Width 250 s, Duty Cycle 2%. http://onsemi.com 49 TJ = 25C TJ = 85C 0.30 0.38 0.52 0.20 0.33 0.50 TJ = 25C TJ = 85C 0.41 0.13 0.05 11 5.3 3.2 V mA ""',-'-'(.,(+0+.++'-&), > "',-'-'(.,(+0+.++'-&), MBRM130LT3 -# -# -# -# -# -# -# -# -# / &1"&.& "',-'-'(., (+0+ /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage " +&1"&.&+/+,.++'-&), " ++/+,.++'-&), -# K "',-'-'(., (+0+ /(%- /(%-, -# -# -# -# -# -# /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current http://onsemi.com 50 +* @!O 98 )( /+ )(0+",,")-"('0--, ,*.+ 0/ "E@ "D "E@ "D "E@ "D "E@ "D )"-'E ,*.+ 0/ 98 "E@ "D "E@ "D Figure 6. Forward Power Dissipation "E@ "D "E@ "D Figure 5. Current Derating -# "( /+ (+0+ .++'- &), -% % -&)+-.+ -# +-()+-"' -&)+-.+ " ( /+ (+0+.++'-&), MBRM130LT3 +I?6 0 0 0 0 0 /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ = TJmax - r(t)(Pf + Pr) where TJ may be calculated from the equation: r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax - r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. http://onsemi.com 51 + - -+',"'--!+&%+,",-''(+&%"3 MBRM130LT3 +I?AI +I?AGI - -"& H + - -+',"'--!+&%+,",-''(+&%"3 Figure 9. Thermal Response Junction to Lead +I?AI +I?AGI - -"& H Figure 10. Thermal Response Junction to Ambient http://onsemi.com 52 63)$&( 1605 &+155-: 18(3 (&5,),(3 POWERMITE Power Surface Mount Package http://onsemi.com The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop-reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the Powermite has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of the lowest height profiles, < 1.1 mm in the industry. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are ac/dc and dc-dc converters, reverse battery protection, and "Oring" of multiple supply voltages and any other application where performance and size are critical. SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 40 VOLTS POWERMITE CASE 457 PLASTIC Features: * * * * * '( -!( Low Profile -- Maximum Height of 1.1 mm Small Footprint -- Footprint Area of 8.45 mm2 Low VF Provides Higher Efficiency and Extends Battery Life Supplied in 12 mm Tape and Reel -- 12,000 Units per Reel Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink MARKING DIAGRAM BCJ Mechanical Characteristics: * * * * * * Powermite is JEDEC Registered as D0-216AA Case: Molded Epoxy Epoxy Meets UL94, VO at 1/8 Weight: 62 mg (approximately) Device Marking: BCJ Lead and Mounting Surface Temperature for Soldering Purposes. 260C Maximum for 10 Seconds BCJ = Device Code ORDERING INFORMATION Device MBRM140T3 Package Shipping POWERMITE 12,000/Tape & Reel MAXIMUM RATINGS Please See the Table on the Following Page This document contains information on a new product. Specifications and information herein are subject to change without notice. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 3 53 Publication Order Number: MBRM140T3/D MBRM140T3 MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 40 V IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 110C) IFRM 2.0 A Non-Repetitive Peak Surge Current (Non-Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM 50 A Storage Temperature Tstg -55 to 150 C Operating Junction Temperature TJ -55 to 125 C dv/dt 10,000 V/s Rtjl Rtjtab Rtja 35 23 277 C/W Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 110C) Voltage Rate of Change (Rated VR, TJ = 25C) THERMAL CHARACTERISTICS Thermal Resistance - Junction-to-Lead (Anode) (Note 1.) Thermal Resistance - Junction-to-Tab (Cathode) (Note 1.) Thermal Resistance - Junction-to-Ambient (Note 1.) 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10. ELECTRICAL CHARACTERISTICS VF Maximum Instantaneous Forward Voltage (Note 2.), See Figure 2 (IF = 0.1 A) (IF = 1.0 A) (IF = 3.0 A) IR Maximum Instantaneous Reverse Current (Note 2.), See Figure 4 (VR = 40 V) (VR = 20 V) 2. Pulse Test: Pulse Width 250 s, Duty Cycle 2%. http://onsemi.com 54 TJ = 25C TJ = 85C 0.36 0.55 0.85 0.30 0.515 0.88 TJ = 25C TJ = 85C 0.5 0.15 25 18 V mA ""',-'-'(.,(+0+.++'-&), > "',-'-'(.,(+0+.++'-&), MBRM140T3 -# -# -# -# -# -# -# / &1"&.& "',-'-'(., (+0+ /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage " +&1"&.&+/+,.++'-&), " ++/+,.++'-&), K "',-'-'(., (+0+ /(%- /(%-, -# -# -# -# -# -# /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current http://onsemi.com 55 +* @!O 98 )( /+ )(0+",,")-"('0--, ,*.+ 0/ "E@ "D "E@ "D "E@ "D "E@ "D )"-'E "E@ "D "E@ "D "E@ "D ,*.+ 0/ 98 "E@ "D Figure 6. Forward Power Dissipation Figure 5. Current Derating -# "( /+ (+0+ .++'- &), -% % -&)+-.+ -# +-()+-"' -&)+-.+ " ( /+ (+0+.++'-&), MBRM140T3 +I?6 0 0 0 0 0 /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ = TJmax - r(t)(Pf + Pr) where TJ may be calculated from the equation: r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax - r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. http://onsemi.com 56 + - -+',"'--!+&%+,",-''(+&%"3 MBRM140T3 +I?AI +I?AGI - -"& H + - -+',"'--!+&%+,",-''(+&%"3 Figure 9. Thermal Response Junction to Lead +I?AI +I?AGI - -"& H Figure 10. Thermal Response Junction to Ambient http://onsemi.com 57 63)$&( 1605 &+155-: 18(3 (&5,),(3 SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. * * * * Compact Package with J-Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Over-Voltage Protection Low Forward Voltage Drop http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 30 VOLTS Mechanical Characteristics: * * * * * * * * Case: Molded Epoxy Epoxy Meets UL94, VO at 1/8 Weight: 70 mg (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Polarity: Cathode Lead Indicated by Either Notch in Plastic Body or Polarity Band Available in 12 mm Tape, 5000 Units per 13 inch Reel, Add "T3" Suffix to Part Number Marking: B1L3 SMA CASE 403A PLASTIC MARKING DIAGRAM B1L3 Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 30 V Average Rectified Forward Current (At Rated VR, TC = 105C) IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 105C) IFRM 2.0 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 25 A Tstg, TC -55 to +150 C TJ -55 to +125 C dv/dt 10,000 V/s Storage/Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25C) Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 3 B1L3 B1L3 = Device Code MAXIMUM RATINGS Rating SMA CASE 403B PLASTIC ORDERING INFORMATION Device MBRA130LT3 58 Package Shipping SMA 5000/Tape & Reel Publication Order Number: MBRA130LT3/D MBRA130LT3 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RJL RJA 35 86 C/W Thermal Resistance -- Junction-to-Lead (Note 1.) Thermal Resistance -- Junction-to-Ambient (Note 1.) ELECTRICAL CHARACTERISTICS VF Maximum Instantaneous Forward Voltage (Note 2 2.)) (IF = 1.0 A) (IF = 2.0 A) see Figure 2 IR Maximum Instantaneous Reverse Current (VR = 30 V) (VR = 15 V) see Figure 4 TJ = 25C TJ = 100C 0.41 0.47 0.35 0.43 TJ = 25C TJ = 100C 1.0 0.4 25 12 Volts mA " "',-'-'(.,(+0+.++'-&), > "',-'-'(.,(+0+.++'-&), 1. Mounted on 2 Square PC Board with 1 Square Total Pad Size, PC Board FR4. 2. Pulse Test: Pulse Width 250 s, Duty Cycle 2.0%. -# -# -# -# -# -# / &1"&.& "',-'-'(., (+0+ /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage " + &1"&.&+/+,.++'-&), " + +/+,.++'-&), -# K "',-'-'(., (+0+ /(%- /(%-, -# -# -# -# -# /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current http://onsemi.com 59 MBRA130LT3 )( /+ )(0+",,")-"('0--, +* @!O 98 ,*.+ 0/ "E@ "D "E@ "D "E@ "D "E@ "D 98 ,*.+ 0/ "E@ "D "E@ "D "E@ "D "E@ "D -% % -&)+-.+ "( /+ (+0+ .++'- &), Figure 5. Current Derating Figure 6. Forward Power Dissipation - -"& H - -"& H Figure 7. Thermal Response )"-'E + - -+',"'--!+&%+,",-''(+&%"3 "( /+ (+0+.++'-&), -# /+ +/+, /(%- /(%-, Figure 8. Capacitance http://onsemi.com 60 63)$&( 1605 &+155-: 18(3 (&5,),(3 SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system. * * * * * Small Compact Surface Mountable Package with J-Bent Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Guardring for Stress Protection http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 40 VOLTS Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 70 mg (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped in 12 mm tape, 5000 units per 13 inch reel Polarity: Cathode Lead Indicated by Either Notch in Plastic Body or Polarity Band Marking: B14 SMA CASE 403A PLASTIC SMA CASE 403B PLASTIC MARKING DIAGRAM B14 B14 B14 = Device Code MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 40 V Average Rectified Forward Current (At Rated VR, TC = 95C) IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 100C) IFRM 2.0 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 30 A Tstg, TC -55 to +150 C TJ -55 to +125 C dv/dt 10,000 V/s Storage/Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25C) Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 3 ORDERING INFORMATION Device MBRA140T3 61 Package Shipping SMA 5000/Tape & Reel Publication Order Number: MBRA140T3/D MBRA140T3 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RJL RJA 35 86 C/W Thermal Resistance -- Junction-to-Lead (Note 1.) Thermal Resistance -- Junction-to-Ambient (Note 1.) ELECTRICAL CHARACTERISTICS VF Maximum Instantaneous Forward Voltage (Note 2 2.)) TJ = 25C TJ = 100C 0.55 0.71 0.505 0.74 TJ = 25C TJ = 100C 0.5 0.1 10 4.0 (IF = 1.0 A) (IF = 2.0 A) see Figure 2 for other Values IR Maximum Instantaneous Reverse Current (VR = 40 V) (VR = 20 V) see Figure 4 for other Values Volts mA " "',-'-'(.,(+0+.++'-&), > "',-'-'(.,(+0+.++'-&), 1. Mounted on 2 Square PC Board with 1 Square Total Pad Size, PC Board FR4. 2. Pulse Test: Pulse Width 250 s, Duty Cycle 2.0%. -# -# -# -# -# -# -# / &1"&.& "',-'-'(., (+0+ /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage -# -# " + &1"&.&+/+,.++'-&), " + +/+,.++'-&), K "',-'-'(., (+0+ /(%- /(%-, -# -# -# /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current http://onsemi.com 62 + - -+',"'--!+&%+,",-''(+&%"3 "( /+ (+0+.++'-&), 98 +* @!O )( /+ )(0+",,")-"('0--, MBRA140T3 ,*.+ 0/ "E@ "D "E@ "D "E@ "D "E@ "D ,*.+ 0/ 98 "E@ "D "E@ "D "E@ "D "E@ "D -% % -&)+-.+ "( /+ (+0+ .++'- &), Figure 5. Current Derating Figure 6. Forward Power Dissipation - -"& H - -"& H Figure 7. Thermal Response )"-'E -# /+ +/+, /(%- /(%-, Figure 8. Capacitance http://onsemi.com 63 Preferred Device 63)$&( 1605 &+155-: 18(3 (&5,),(3 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. * * * * * * Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop (0.55 Volts Max @ 1.0 A, TJ = 25C) Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 20 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 95 mg (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * SMB CASE 403A PLASTIC Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped in 12 mm Tape and Reel, 2500 units per reel Cathode Polarity Band Marking: B12 MARKING DIAGRAM B12 MAXIMUM RATINGS Rating B12 = Device Code Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 V Average Rectified Forward Current (TL = 115C) IF(AV) 1.0 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 40 A Operating Junction Temperature Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 5 ORDERING INFORMATION Device MBRS120T3 TJ C -65 to +125 64 Package Shipping SMB 2500/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MBRS120T3/D MBRS120T3 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RJL 12 C/W Maximum Instantaneous Forward Voltage (Note 1.) (iF = 1.0 A, TJ = 25C) VF 0.6 Volts Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 100C) iR Thermal Resistance -- Junction to Lead (TL = 25C) ELECTRICAL CHARACTERISTICS mA 1.0 10 - - -# " + +/+,.++'-B > "',-'-'(.,(+0+.++'-&), 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. K "',-'-'(., (+0+ /(%- /(%-, /+ +/+, /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current http://onsemi.com 65 MBRS120T3 '(- -2)"% )"-' - / E )"-'E /+ +/+, /(%- /(%-, )/ /+ )(0+",,")-"('0--, " / /+ (+0+.++'-&), Figure 3. Typical Capacitance +- /(%- ))%" +# 0 -# ,*.+ 0/ - , -&)+-.+ )"-' %( ")$ "/ ,*.+ 0/ -# "/ /+ (+0+ .++'- &), Figure 4. Current Derating (Case) Figure 5. Power Dissipation http://onsemi.com 66 Preferred Device &+155-: 18(3 (&5,),(3 Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. * Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, TJ = 25C) * Small Compact Surface Mountable Package with J-Bend Leads * Highly Stable Oxide Passivated Junction * Guardring for Stress Protection http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 30 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 95 mg (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * SMB CASE 403A PLASTIC Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped in 12 mm Tape and Reel, 2500 units per reel Cathode Polarity Band Marking: 1BL3 MARKING DIAGRAM 1BL3 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 30 V Average Rectified Forward Current TL = 120C TL = 110C IF(AV) Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 40 A TJ -65 to +125 C Operating Junction Temperature Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 3 A 1.0 2.0 67 1BL3 = Device Code ORDERING INFORMATION Device Package Shipping MBRS130LT3 SMB 2500/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MBRS130LT3/D MBRS130LT3 THERMAL CHARACTERISTICS Rating Thermal Resistance -- Junction to Lead (TL = 25C) Symbol Value Unit RJL 12 C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1.) (iF = 1.0 A, TJ = 25C) (iF = 2.0 A, TJ = 25C) VF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 100C) IR Volts 0.395 0.445 mA 1.0 10 " + +/+,%$ .++'-B -# -# K "',-'-'(., /(%- /(%-, /+ +/+, /(%- /(%-, Figure 2. Typical Reverse Leakage Current +- /(%- ))%" +# 0 -# ,*.+ 0/ Figure 1. Typical Forward Voltage )/ /+ )(0+",,")-"('0--, " / /+ (+0+.++'-&), > "',-'-'(.,(+0+.++'-&), 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. - , -&)+-.+ -# ,*.+ 0/ ")$ "/ "/ /+ (+0+ .++'- &), Figure 3. Current Derating (Case) Figure 4. Typical Power Dissipation http://onsemi.com 68 MBRS130LT3 '(- -2)"% )"-' - / E )"-'E /+ +/+, /(%- /(%-, Figure 5. Typical Capacitance http://onsemi.com 69 Preferred Device 63)$&( 1605 &+155-: 18(3 (&5,),(3 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. * * * * * * Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop (0.55 Volts Max @ 1.0 A, TJ = 25C) Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 30 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 95 mg (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * SMB CASE 403A PLASTIC Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped in 12 mm Tape and Reel, 2500 units per reel Cathode Polarity Band Marking: B13 MARKING DIAGRAM B13 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 30 V Average Rectified Forward Current (TL = 115C) IF(AV) 1.0 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 40 A Operating Junction Temperature B13 = Device Code ORDERING INFORMATION Device MBRS130T3 TJ Package Shipping SMB 2500/Tape & Reel C -65 to +125 Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 5 70 Publication Order Number: MBRS130T3/D MBRS130T3 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RJL 12 C/W Maximum Instantaneous Forward Voltage (Note 1.) (iF = 1.0 A, TJ = 25C) VF 0.6 Volts Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 100C) iR Thermal Resistance -- Junction to Lead (TL = 25C) ELECTRICAL CHARACTERISTICS mA 1.0 10 - - -# " + +/+,.++'-B > "',-'-'(.,(+0+.++'-&), 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. K "',-'-'(., (+0+ /(%- /(%-, /+ +/+, /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current http://onsemi.com 71 MBRS130T3 '(- -2)"% )"-' - / E )"-'E /+ +/+, /(%- /(%-, )/ /+ )(0+",,")-"('0--, " / /+ (+0+.++'-&), Figure 3. Typical Capacitance +- /(%- ))%" +# 0 -# ,*.+ 0/ - , -&)+-.+ )"-' %( ")$ "/ ,*.+ 0/ -# "/ /+ (+0+ .++'- &), Figure 4. Current Derating (Case) Figure 5. Power Dissipation http://onsemi.com 72 Preferred Device 63)$&( 1605 &+155-: 18(3 (&5,),(3 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. * * * * * * Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop (0.55 Volts Max @ 1.0 A, TJ = 25C) Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 40 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 95 mg (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * SMB CASE 403A PLASTIC Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped in 12 mm Tape and Reel, 2500 units per reel Cathode Polarity Band Marking: B14 MARKING DIAGRAM B14 MAXIMUM RATINGS Rating B14 = Device Code Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 40 V Average Rectified Forward Current (TL = 115C) IF(AV) 1.0 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 40 A MBRS140T3 TJ -65 to +125 C Preferred devices are recommended choices for future use and best overall value. Operating Junction Temperature Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 5 ORDERING INFORMATION 73 Device Package Shipping SMB 2500/Tape & Reel Publication Order Number: MBRS140T3/D MBRS140T3 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RJL 12 C/W Maximum Instantaneous Forward Voltage (Note 1.) (iF = 1.0 A, TJ = 25C) VF 0.6 Volts Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 100C) iR Thermal Resistance -- Junction to Lead (TL = 25C) ELECTRICAL CHARACTERISTICS mA 1.0 10 - - -# " + +/+,.++'-B > "',-'-'(.,(+0+.++'-&), 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. K "',-'-'(., (+0+ /(%- /(%-, /+ +/+, /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current http://onsemi.com 74 MBRS140T3 '(- -2)"% )"-' - / E )"-'E /+ +/+, /(%- /(%-, )/ /+ )(0+",,")-"('0--, " / /+ (+0+.++'-&), Figure 3. Typical Capacitance +- /(%- ))%" +# 0 -# ,*.+ 0/ - , -&)+-.+ )"-' %( ")$ "/ ,*.+ 0/ -# "/ /+ (+0+ .++'- &), Figure 4. Current Derating (Case) Figure 5. Power Dissipation http://onsemi.com 75 63)$&( 1605 &+155-: 18(3 (&5,),(3 SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. * * * * Compact Package with J-Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Over-Voltage Protection Low Forward Voltage Drop http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 40 VOLTS Mechanical Characteristics: * * * * * * * * Case: Molded Epoxy Epoxy Meets UL94, VO at 1/8 Weight: 95 mg (approximately) Cathode Polarity Band Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Available in 12 mm Tape, 2500 Units per 13 Reel, Add "T3" Suffix to Part Number Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Marking: B14L SMB CASE 403A PLASTIC MARKING DIAGRAM B14L MAXIMUM RATINGS Rating B14L = Device Code Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 40 V Average Rectified Forward Current (At Rated VR, TC = 110C) IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 110C) IFRM 2.0 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 40 A Tstg, TC -55 to +150 C TJ -55 to +125 C dv/dt 10,000 V/s Storage/Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25C) Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 76 ORDERING INFORMATION Device Package Shipping MBRS140LT3 SMB 2500/Tape & Reel Publication Order Number: MBRS140LT3/D MBRS140LT3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RJL RJA 24 80 C/W Thermal Resistance -- Junction-to-Lead (Note 1.) Thermal Resistance -- Junction-to-Ambient (Note 2.) ELECTRICAL CHARACTERISTICS vF Maximum Instantaneous Forward Voltage (Note 3 3.)) see Figure 2 (iF = 1.0 A) (iF = 2.0 A) IR Maximum Instantaneous Reverse Current (Note 3 3.)) see Figure 4 (VR = 40 V) (VR = 20 V) 1. Mounted with minimum recommended pad size, PC Board FR4. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 3. Pulse Test: Pulse Width 250 s, Duty Cycle 2.0%. http://onsemi.com 77 TJ = 25C TJ = 125C 0.5 0.6 0.425 0.58 TJ = 25C TJ = 100C 0.4 0.02 10 5.0 Volts mA MBRS140LT3 ""',-'-'(.,(+0+.++'-&), > "',-'-'(.,(+0+.++'-&), -# Q Figure 2. Maximum Forward Voltage "+ &1"&.&+/+,.++'-&), "+ +/+,.++'-&), Figure 1. Typical Forward Voltage -# -# /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 98 +* @!O ,*.+ 0/ "E@ "D "E@ "D "E@ "D "E@ "D )( /+ )(0+",,")-"('0--, "( /+ (+0+.++'-&), -# / &1"&.& "',-'-'(., (+0+ /(%- /(%-, K "',-'-'(., (+0+ /(%- /(%-, ,*.+ 0/ "E@ "D "E@ "D "E@ "D "E@ "D -% % -&)+-.+ "( /+ (+0+ .++'- &), Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 78 98 )"-'E -# + --+',"'--!+&%+,",-''(+&%"3 0 0 0 0 +I?6 0 /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ = TJmax - r(t)(Pf + Pr) where TJ may be calculated from the equation: r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax - r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. -# +-()+-"' -&)+-.+ MBRS140LT3 +I?AI +I?AGI + --+',"'--!+&%+,",-''(+&%"3 I -"& H Figure 9. Thermal Response -- Junction to Lead +I?AI +I?AGI I -"& H Figure 10. Thermal Response -- Junction to Ambient http://onsemi.com 79 Preferred Devices &+155-: 18(3 (&5,),(3 Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. These state-of-the-art devices have the following features: * * * * * * Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction High Blocking Voltage -- 100 Volts 150C Operating Junction Temperature Guardring for Stress Protection http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 90, 100 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 95 mg (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal SMB CASE 403A PLASTIC Leads are Readily Solderable * Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds MARKING DIAGRAM * Shipped in 12 mm Tape and Reel, 2500 units per reel * Cathode Polarity Band * Markings; MBRS190T3: B19 B1x Markings; MBRS1100T3: B1C B1x = Device Code x = 9 or C MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBRS190T3 MBRS1100T3 VRRM VRWM VR Average Rectified Forward Current TL = 120C TL = 100C IF(AV) Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Operating Junction Temperature Voltage Rate of Change Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 5 Value Unit V ORDERING INFORMATION 90 100 Device Package Shipping MBRS1100T3 SMB 2500/Tape & Reel MBRS190T3 SMB 2500/Tape & Reel A 1.0 2.0 50 A Preferred devices are recommended choices for future use and best overall value. TJ -65 to +150 C dv/dt 10 V/ns 80 Publication Order Number: MBRS1100T3/D MBRS1100T3, MBRS190T3 THERMAL CHARACTERISTICS Rating Symbol Value Unit RJL 22 C/W Maximum Instantaneous Forward Voltage (Note 1.) (iF = 1.0 A, TJ = 25C) VF 0.75 Volts Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 100C) IR Thermal Resistance -- Junction to Lead (TL = 25C) ELECTRICAL CHARACTERISTICS mA 0.5 5.0 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. -# $ -# " + +/+,.++'- >"',-'-'(.,(+0+.++'-&), TYPICAL ELECTRICAL CHARACTERISTICS /+ +/+, /(%- /(%-, K "',-'-'(., /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current* ,*.+ 0/ ,*.+ 0/ +- /+ ))%" +#% 0 -# -# "/+ (+0+.++'-&), / )/+ )(0+",,")-"('0--, / *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these curves if VR is sufficient below rated VR. "/ /+ (+0+ .++'- &), -% % -&)+-.+ Figure 3. Power Dissipation Figure 4. Current Derating, Lead http://onsemi.com 81 MBRS1100T3, MBRS190T3 )"-'E TYPICAL ELECTRICAL CHARACTERISTICS '(- -2)"% )"-' '(- - / E /+ +/+, /(%- /(%-, Figure 5. Typical Capacitance http://onsemi.com 82 63)$&( 1605 &+155-: 18(3 (&5,),(3 SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. * * * * Compact Package with J-Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Over-Voltage Protection Low Forward Voltage Drop http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.5 AMPERES 40 VOLTS Mechanical Characteristics: * * * * * * * * Case: Molded Epoxy Epoxy Meets UL94, VO at 1/8 Weight: 95 mg (approximately) Cathode Polarity Band Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Available in 12 mm Tape, 2500 Units per 13 Reel, Add "T3" Suffix to Part Number Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Marking: BGJ SMB CASE 403A PLASTIC MARKING DIAGRAM BGJ MAXIMUM RATINGS Rating BGJ = Device Code Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 40 V Average Rectified Forward Current (At Rated VR, TC = 100C) IO 1.5 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 105C) IFRM 3.0 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 40 A Tstg, TC -55 to +150 C TJ -55 to +125 C dv/dt 10,000 V/s Storage/Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25C) Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 83 ORDERING INFORMATION Device Package Shipping MBRS1540T3 SMB 2500/Tape & Reel Publication Order Number: MBRS1540T3/D MBRS1540T3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance -- Junction-to-Lead (Note 1.) Thermal Resistance -- Junction-to-Ambient (Note 2.) Symbol Value Unit RJL RJA 24 80 C/W ELECTRICAL CHARACTERISTICS vF Maximum Instantaneous Forward Voltage (Note 3 3.)) see Figure 2 (iF = 1.5 A) (iF = 3.0 A) IR Maximum Instantaneous Reverse Current (Note 3 3.)) see Figure 4 (VR = 40 V) (VR = 20 V) 1. Mounted with minimum recommended pad size, PC Board FR4. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 3. Pulse Test: Pulse Width 250 s, Duty Cycle 2.0%. http://onsemi.com 84 TJ = 25C TJ = 125C 0.46 0.54 0.39 0.54 TJ = 25C TJ = 100C 0.8 0.1 5.7 1.6 Volts mA ""',-'-'(.,(+0+.++'-&), > "',-'-'(.,(+0+.++'-&), MBRS1540T3 -# Q Figure 2. Maximum Forward Voltage "+ &1"&.&+/+,.++'-&), "+ +/+,.++'-&), Figure 1. Typical Forward Voltage -# -# /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current +* @!O 98 ,*.+ 0/ "E@ "D "E@ "D "E@ "D "E@ "D )( /+ )(0+",,")-"('0--, "( /+ (+0+.++'-&), -# / &1"&.& "',-'-'(., (+0+ /(%- /(%-, K "',-'-'(., (+0+ /(%- /(%-, 98 ,*.+ 0/ "E@ "D "E@ "D "E@ "D "E@ "D -% % -&)+-.+ "( /+ (+0+ .++'- &), Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 85 )"-'E -# + --+',"'--!+&%+,",-''(+&%"3 -# +-()+-"' -&)+-.+ MBRS1540T3 +I?6 0 0 0 0 0 /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ = TJmax - r(t)(Pf + Pr) where TJ may be calculated from the equation: r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax - r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. +I?AI +I?AGI + --+',"'--!+&%+,",-''(+&%"3 I -"& H Figure 9. Thermal Response -- Junction to Case +I?AI +I?AGI I -"& H Figure 10. Thermal Response -- Junction to Ambient http://onsemi.com 86 63)$&( 1605 &+155-: 18(3 (&5,),(3 SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. * * * * Compact Package with J-Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Over-Voltage Protection Low Forward Voltage Drop http://onsemi.com SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES 40 VOLTS Mechanical Characteristics: * * * * * * * * Case: Molded Epoxy Epoxy Meets UL94, VO at 1/8 Weight: 95 mg (approximately) Cathode Polarity Band Maximum Temperature of 260C/10 Seconds for Soldering Available in 12 mm Tape, 2500 Units per 13 Reel, Add "T3" Suffix to Part Number Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Marking: 2BL4 SMB CASE 403A PLASTIC MARKING DIAGRAM 2BL4 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 40 V Average Rectified Forward Current (At Rated VR, TC = 100C) IO 2.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 105C) IFRM 4.0 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 25 A Tstg, TC -55 to +150 C TJ -55 to +125 C dv/dt 10,000 V/s Storage/Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25C) Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 87 2BL4 = Device Code ORDERING INFORMATION Device Package Shipping MBRS240LT3 SMB 2500/Tape & Reel Publication Order Number: MBRS240LT3/D MBRS240LT3 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RJL RJA 18 78 C/W Thermal Resistance -- Junction-to-Lead (Note 1.) Thermal Resistance -- Junction-to-Ambient (Note 3.) ELECTRICAL CHARACTERISTICS VF Maximum Instantaneous Forward Voltage (Note 2 2.)) TJ = 25C TJ = 125C 0.43 0.54 0.375 0.55 TJ = 25C TJ = 100C 2.0 0.5 60 40 (IF = 2.0 A) (IF = 4.0 A) see Figure 2 IR Maximum Instantaneous Reverse Current (Note 2 2.)) (VR = 40 V) (VR = 20 V) see Figure 4 Volts mA -# Q -# / &1"&.& "',-'-'(., (+0+ /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage "+ &1"&.&+/+,.++'-&), -# K "',-'-'(., (+0+ /(%- /(%-, "+ +/+,.++'-&), ""',-'-'(.,(+0+.++'-&), > "',-'-'(.,(+0+.++'-&), 1. Mounted with minimum recommended pad size, PC Board FR4. 2. Pulse Test: Pulse Width 250 s, Duty Cycle 2.0%. 3. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current http://onsemi.com 88 +* @!O 98 ,*.+ 0/ "E@ "D "E@ "D "E@ "D "E@ "D )( /+ )(0+",,")-"('0--, "( /+ (+0+.++'-&), MBRS240LT3 98 ,*.+ 0/ "E@ "D "E@ "D "E@ "D "E@ "D -% % -&)+-.+ "( /+ (+0+ .++'- &), Figure 5. Current Derating Figure 6. Forward Power Dissipation ,.+ .++'-&), )"-'E -# + --+',"'--!+&%+,",-''(+&%"3 ).%, 0"-! , Figure 7. Capacitance Figure 8. Maximum Non-Repetitive Forward Surge Current /+ +/+, /(%- /(%-, +I?AI +I?AGI I -"& H Figure 9. Thermal Response http://onsemi.com 89 63)$&( 1605 &+155-: 18(3 (&5,),(3 SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. * * * * Compact Package with J-Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Over-Voltage Protection Low Forward Voltage Drop http://onsemi.com SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES 40 VOLTS Mechanical Characteristics: * * * * * * * * Case: Molded Epoxy Epoxy Meets UL94, VO at 1/8 Weight: 95 mg (approximately) Maximum Temperature of 260C / 10 Seconds for Soldering Cathode Polarity Band Available in 12 mm Tape, 2500 Units per 13 inch Reel, Add "T3" Suffix to Part Number Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Marking: BKJL SMB CASE 403A PLASTIC MARKING DIAGRAM BKJL MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 40 V Average Rectified Forward Current (At Rated VR, TC = 103C) IO 2.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 104C) IFRM 4.0 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 70 A Tstg, TC -55 to +150 C TJ -55 to +125 C dv/dt 10,000 V/s Storage/Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25C) Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 90 BKJL = Device Code ORDERING INFORMATION Device Package Shipping MBRS2040LT3 SMB 2500/Tape & Reel Publication Order Number: MBRS2040LT3/D MBRS2040LT3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance -- Junction-to-Lead (Note 1.) Thermal Resistance -- Junction-to-Ambient (Note 2.) Symbol Value Unit RJL RJA 22.5 78 C/W ELECTRICAL CHARACTERISTICS VF Maximum Instantaneous Forward Voltage (Note 3 3.)) see Figure 2 (IF = 2.0 A) (IF = 4.0 A) IR Maximum Instantaneous Reverse Current (Note 3 3.)) see Figure 4 (VR = 40 V) (VR = 20 V) 1. Minimum pad size (0.108 X 0.085 inch) for each lead on FR4 board. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 3. Pulse Test: Pulse Width 250 s, Duty Cycle 2.0%. http://onsemi.com 91 TJ = 25C TJ = 125C 0.43 0.50 0.34 0.45 TJ = 25C TJ = 100C 0.8 0.1 20 6.0 Volts mA ""',-'-'(.,(+0+.++'-&), > "',-'-'(.,(+0+.++'-&), MBRS2040LT3 -# -# -# -# " +&1"&.&+/+,.++'-&), " ++/+,.++'-&), -# Figure 2. Maximum Forward Voltage -# -# -# -# Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current ,*.+ 0/ "E@ "D "E@ "D "E@ "D "E@ "D /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, 98 -# )( /+ )(0+",,")-"('0--, " ( /+ (+0+.++'-&), -# Figure 1. Typical Forward Voltage -# -# / &1"&.& "',-'-'(., (+0+ /(%- /(%-, K "',-'-'(., (+0+ /(%- /(%-, ,*.+ 0/ "E@ "D 98 "E@ "D "E@ "D "E@ "D -% % -&)+-.+ "( /+ (+0+ .++'- &), Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 92 )"-'E -# + - -+',"'--!+&%+,",-''(+&%"3 + - -+',"'--!+&%+,",-''(+&%"3 -# +-()+-"' -&)+-.+ MBRS2040LT3 +I?6 0 0 0 0 0 /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ = TJmax - r(t)(Pf + Pr) where TJ may be calculated from the equation: r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax - r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. +I?AI +I?AGI - -"& H Figure 9. Thermal Response Junction to Lead +I?AI +I?AGI - -"& H Figure 10. Thermal Response Junction to Ambient http://onsemi.com 93 Preferred Devices 63)$&( 1605 &+155-: 18(3 (&5,),(3 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. * * * * * * Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop (0.5 Volts Max @ 3.0 A, TJ = 25C) Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40, 60 VOLTS SMC CASE 403 PLASTIC Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 217 mg (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * MARKING DIAGRAM Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped in 16 mm Tape and Reel, 2500 units per reel Polarity: Notch in Plastic Body Indicates Cathode Lead Marking: B32, B33, B34, B36 YWW B3x B3x x Y W = Device Code = 2, 3, 4 or 6 = Year = Work Week MAXIMUM RATINGS Please See the Table on the Following Page ORDERING INFORMATION Device Package Shipping MBRS320T3 SMC 2500/Tape & Reel MBRS330T3 SMC 2500/Tape & Reel MBRS340T3 SMC 2500/Tape & Reel MBRS360T3 SMC 2500/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 3 94 Publication Order Number: MBRS340T3/D MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 MAXIMUM RATINGS Symbol MBRS320T3 MBRS330T3 MBRS340T3 MBRS360T3 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 20 30 40 60 Volts Average Rectified Forward Current IF(AV) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 80 80 TJ - 65 to +125 - 65 to +125 RJL 11 11 11 11 0.50 0.50 0.525 0.740 2.0 20 2.0 20 2.0 20 0.5 20 Operating Junction Temperature 3.0 @ TL = 100C 4.0 @ TL = 90C Amps 80 80 Amps C - 65 to +125 THERMAL CHARACTERISTICS Thermal Resistance -- Junction to Lead C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1.) (iF = 3.0 A, TJ = 25C) VF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 100C) iR Volts mA 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. http://onsemi.com 95 " + +/+,.++'-B > "',-'-'(.,(+0+.++'-&), MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 - - K "',-'-'(., /(%- /(%-, /+ +/+, /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current )/ /+ )(0+",,")-"('0--, -# "/ ,*.+ 0/ )"-"/ %( ")$ -# "/ /+ (+0+ .++'- &), +- /(%- ))%" +# 0 -# ,*.+ 0/ -2)"% )"-' - / E )"-'E " / /+ (+0+.++'-&), Figure 3. Power Dissipation -# - , -&)+-.+ /+ +/+, /(%- /(%-, Figure 4. Current Derating (Case) Figure 5. Typical Capacitance http://onsemi.com 96 MBRD320, MBRD340 and MBRD360 are Preferred Devices " 18(3 (&5,),(34 http://onsemi.com DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20 TO 60 VOLTS . . . designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. These state-of-the-art devices have the following features: * Extremely Fast Switching * Extremely Low Forward Drop * Platinum Barrier with Avalanche Guardrings 1 3 4 Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 0.4 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * 4 Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 75 units per plastic tube Available in 16 mm Tape and Reel, 2500 units per reel, by adding a "T4'' suffix to the part number Marking: B320, B330, B340, B350, B360 MAXIMUM RATINGS Please See the Table on the Following Page MARKING DIAGRAM 1 B3x0 3 DPAK CASE 369A PLASTIC B3x0 x = Device Code = 2, 3, 4, 5 or 6 ORDERING INFORMATION Device Package Shipping MBRD320 DPAK 75 Units/Rail MBRD320RL DPAK 1800/Tape & Reel MBRD320T4 DPAK 2500/Tape & Reel MBRD330 DPAK 75 Units/Rail MBRD330RL DPAK 1800/Tape & Reel MBRD330T4 DPAK 2500/Tape & Reel MBRD340 DPAK 75 Units/Rail MBRD340RL DPAK 1800/Tape & Reel MBRD340T4 DPAK 2500/Tape & Reel MBRD350 DPAK 75 Units/Rail MBRD350RL DPAK 1800/Tape & Reel MBRD350T4 DPAK 2500/Tape & Reel MBRD360 DPAK 75 Units/Rail MBRD360RL DPAK 1800/Tape & Reel MBRD360T4 DPAK 2500/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 97 Publication Order Number: MBRD320/D MBRD320, MBRD330, MBRD340, MBRD350, MBRD360 MAXIMUM RATINGS MBRD Rating Symbol 320 330 340 350 360 20 30 40 50 60 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR Volts Average Rectified Forward Current (TC = +125C, Rated VR) IF(AV) 3 Amps Peak Repetitive Forward Current, TC = +125C (Rated VR, Square Wave, 20 kHz) IFRM 6 Amps Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 75 Amps Peak Repetitive Reverse Surge Current (2 s, 1 kHz) IRRM 1 Amp Operating Junction Temperature Range TJ -65 to +150 C Storage Temperature Range Tstg -65 to +175 C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s Maximum Thermal Resistance, Junction to Case RJC 6 C/W Maximum Thermal Resistance, Junction to Ambient (Note 1.) RJA 80 C/W THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2.) iF = 3 Amps, TC = +25C iF = 3 Amps, TC = +125C iF = 6 Amps, TC = +25C iF = 6 Amps, TC = +125C VF Maximum Instantaneous Reverse Current (Note 2.) (Rated dc Voltage, TC = +25C) (Rated dc Voltage, TC = +125C) iR Volts 0.6 0.45 0.7 0.625 mA 0.2 20 1. Rating applies when surface mounted on the minimum pad size recommended. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. http://onsemi.com 98 MBRD320, MBRD330, MBRD340, MBRD350, MBRD360 TYPICAL CHARACTERISTICS " + +/+,.++'-B -# -# Figure 2. Typical Reverse Current /+ +/+, /(%- /(%-, *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these curves if VR is sufficient below rated VR. )/ /+ )(0+",,")-"('0--, > "',-'-'(.,(+0+.++'-&), ,"' 0/ -# 98 ")$ "/ ,*.+ 0/ K "',-'-'(., /(%- /(%-, "/ /+ (+0+ .++'- &), Figure 1. Typical Forward Voltage Figure 3. Average Power Dissipation http://onsemi.com 99 +- /(%- ))%" +# 0 -# ,"' 0/ (+ ,*.+ 0/ 98 " / /+ (+0+.++'-&), +# 0 ,.+ &(.'- (' &"' ) ,"3 +(&&' -# 98 ,*.+ 0/ (+ ,"' 0/ /+ / -# -# - , -&)+-.+ - &"'- -&)+-.+ Figure 4. Current Derating, Case Figure 5. Current Derating, Ambient $ )"-'E " / /+ (+0+.++'-&), MBRD320, MBRD330, MBRD340, MBRD350, MBRD360 -# /+ +/+, /(%- /(%-, Figure 6. Typical Capacitance http://onsemi.com 100 MBRD620CT, MBRD640CT and MBRD660CT are Preferred Devices " 18(3 (&5,),(34 http://onsemi.com DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES 20 TO 60 VOLTS . . . in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: * Extremely Fast Switching * Extremely Low Forward Drop * Platinum Barrier with Avalanche Guardrings Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 0.4 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead and Mounting Surface Temperature for Soldering Purposes: * * * 260C Max. for 10 Seconds Shipped 75 units per plastic tube Available in 16 mm Tape and Reel, 2500 units per reel, by adding a "T4'' suffix to the part number Marking: B620T, B630T, B640T, B650T, B660T 4 MARKING DIAGRAM 1 3 B6x0T DPAK CASE 369A PLASTIC B6x0T = Device Code x = 2, 3, 4, 5 or 6 MAXIMUM RATINGS Please See the Table on the Following Page ORDERING INFORMATION Device Package Shipping MBRD620CTT4 DPAK 2500/Tape & Reel MBRD630CTT4 DPAK 2500/Tape & Reel MBRD640CTT4 DPAK 2500/Tape & Reel MBRD650CT DPAK 75 Units/Rail MBRD650CTT4 DPAK 2500/Tape & Reel MBRD660CT DPAK 75 Units/Rail MBRD660CTRL DPAK 1800/Tape & Reel MBRD660CTT4 DPAK 2500/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 101 Publication Order Number: MBRD620CT/D MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT MAXIMUM RATINGS MBRD Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current TC = 130C (Rated VR) VRRM VRWM VR Per Diode Per Device 620CT 630CT 640CT 650CT 660CT 20 30 40 50 60 Unit Volts IF(AV) 3 6 Amps Peak Repetitive Forward Current, TC = 130C (Rated VR, Square Wave, 20 kHz) Per Diode IFRM 6 Amps Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 75 Amps Peak Repetitive Reverse Surge Current (2 s, 1 kHz) IRRM 1 Amp Operating Junction Temperature TJ -65 to +150 C Storage Temperature Tstg -65 to +175 C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s Maximum Thermal Resistance, Junction to Case RJC 6 C/W Maximum Thermal Resistance, Junction to Ambient (Note 1.) RJA 80 C/W THERMAL CHARACTERISTICS PER DIODE ELECTRICAL CHARACTERISTICS PER DIODE Maximum Instantaneous Forward Voltage (Note 2.) iF = 3 Amps, TC = 25C iF = 3 Amps, TC = 125C iF = 6 Amps, TC = 25C iF = 6 Amps, TC = 125C VF Maximum Instantaneous Reverse Current (Note 2.) (Rated dc Voltage, TC = 25C) (Rated dc Voltage, TC = 125C) iR Volts 0.7 0.65 0.9 0.85 mA 0.1 15 1. Rating applies when surface mounted on the minimum pad size recommended. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. http://onsemi.com 102 MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT TYPICAL CHARACTERISTICS " + +/+,.++'-B /+ +/+, /(%- /(%-, Figure 2. Typical Reverse Current,* Per Leg - *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these curves if VR is sufficient below rated VR. )/ /+ )(0+",,")-"('0--, > "',-'-'(.,(+0+.++'-&), -# ,"' 0/ ")$ "/ ,*.+ 0/ 98 -# K "',-'-'(., /(%- /(%-, "/ /+ (+0+ .++'- &), Figure 1. Typical Forward Voltage, Per Leg Figure 3. Average Power Dissipation, Per Leg http://onsemi.com 103 +- /(%- ))%" +# 0 -# ,"' 0/ (+ ,*.+ 0/ 98 " / /+ (+0+.++'-&), +# 0 ,.+ &(.'- (' &"' ) ,"3 +(&&' -# 98 ,*.+ 0/ (+ ,"' 0/ /+ / /+ / - , -&)+-.+ - &"'- -&)+-.+ Figure 4. Current Derating, Case, Per Leg Figure 5. Current Derating, Ambient, Per Leg $ )"-'E " / /+ (+0+.++'-&), MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT -# /+ +/+, /(%- /(%-, Figure 6. Typical Capacitance, Per Leg http://onsemi.com 104 Preferred Device " 18(3 (&5,),(3 DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. This state of the art device has the following features: * * * * * Low Forward Voltage 125C Operating Junction Temperature Epoxy Meets UL94, VO at 1/8 Compact Size Lead Formed for Surface Mount http://onsemi.com SCHOTTKY BARRIER RECTIFIER 8.0 AMPERES 35 VOLTS 1 4 Mechanical Characteristics 3 * Case: Epoxy, Molded * Weight: 0.4 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * 4 Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 75 units per plastic tube Available in 16 mm Tape and Reel, 2500 units per 13 reel, by adding a "T4" suffix to the part number Marking: B835L 1 3 DPAK CASE 369A STYLE 3 MARKING DIAGRAM MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 35 V Average Rectified Forward Current (At Rated VR, TC = 88C) IF(AV) 8.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 80C) IFRM 16 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 75 Repetitive Avalanche Current (Current Decaying Linearly to Zero in 1 s, Frequency Limited by TJmax) IAR Storage Temperature Range Tstg -65 to +150 TJ -65 to +125 C dv/dt 10,000 V/s Operating Junction Temperature Voltage Rate of Change (Rated VR) Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 B835L B835L = Device Code ORDERING INFORMATION Device Package Shipping MBRD835L DPAK 75 Units/Rail MBRD835LT4 DPAK 2500/Tape & Reel A 2.0 A Preferred devices are recommended choices for future use and best overall value. C 105 Publication Order Number: MBRD835L/D MBRD835L THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Resistance -- Junction to Case RJC 6 C/W Thermal Resistance -- Junction to Ambient (Note 1.) RJA 80 C/W Maximum Instantaneous Forward Voltage (Note 2.) (iF = 8 Amps, TC = +25C) (iF = 8 Amps, TC = +125C) VF 0.51 0.41 Volts Maximum Instantaneous Reverse Current (Note 2.) (Rated dc Voltage, TC = +25C) (Rated dc Voltage, TC = +100C) IR 1.4 35 mA ELECTRICAL CHARACTERISTICS 1. Rating applies when surface mounted on the minimum pad size recommended. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. -# K "',-'-'(., /(%- /(%-, ""',-'-'(.,(+0+.++'-&), >"',-'-'(.,(+0+.++'-B TYPICAL CHARACTERISTICS -# Figure 1. Maximum Forward Voltage -# " ++/+,.++'-B " ++/+,.++'-B / "',-'-'(., /(%- /(%-, Figure 2. Typical Forward Voltage -# / +/+, /(%- /(%-, Figure 3. Maximum Reverse Current /+ +/+, /(%- /(%-, Figure 4. Typical Reverse Current http://onsemi.com 106 MBRD835L TYPICAL CHARACTERISTICS )"-'E -# -2)"% &1"&.& /+ +/+, /(%- /(%-, -# +# 0 98 +,",-"/ %( ,*.+ 0/ )"-"/ ")$ %( "/ - , -&)+-.+ "//+ (+0+.++'-&), "//+ (+0+.++'-&), Figure 5. Maximum and Typical Capacitance +,",-"/ %( +,",-"/ %( ,*.+ 0/ +# 0 ,.+ &(.'- (' &"'"'.& +(&&' ) ,"3 )"-"/ ")$ %( "/ - &"'- -&)+-.+ ,.+ &(.'- (' &"'"'.& +(&&' ) ,"3 )"-"/ ")$ %( "/ - &"'- -&)+-.+ Figure 7. Current Derating ) //+ (+0+)(0+",,")-"('0--, "//+ (+0+.++'-&), 98 -# +# 0 ,*.+ 0/ Figure 6. Current Derating, Infinite Heatsink -# 98 -# +,",-"/ %( )"-"/ ")$ %( "/ ,*.+ 0/ 98 Figure 8. Current Derating, Free Air "/ /+ (+0+ .++'- &), Figure 9. Forward Power Dissipation http://onsemi.com 107 " &+155-: 18(3 (&5,),(3 DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes. * Highly Stable Oxide Passivated Junction * Guardring for Stress Protection * Matched Dual Die Construction - * * * * http://onsemi.com SCHOTTKY BARRIER RECTIFIER 10 AMPERES 35 VOLTS May be Paralleled for High Current Output High dv/dt Capability Short Heat Sink Tap Manufactured - Not Sheared Very Low Forward Voltage Drop Epoxy Meets UL94, VO at 1/8" Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 0.4 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal 4 1 3 Leads are Readily Solderable DPAK CASE 369A PLASTIC * Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds * Shipped in 75 units per plastic tube * Available in 16 mm Tape and Reel, 2500 units per Reel, MARKING DIAGRAM Add "T4'' to Suffix part # * Marking: B1035CL B1035CL MAXIMUM RATINGS Please See the Table on the Following Page B1035CL = Device Code ORDERING INFORMATION Device Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 1 108 Package Shipping MBRD1035CTL DPAK 75 Units/Rail MBRD1035CTLT4 DPAK 2500/Tape & Reel Publication Order Number: MBRD1035CTL/D MBRD1035CTL MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 115C) Per Leg Per Package Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 115C) Per Leg Non-Repetitive Peak Surge Current Per Package (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Storage / Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25C) Symbol Value Unit VRRM VRWM VR 35 Volts IO 5.0 10 Amps IFRM 10 Amps IFSM 50 Amps Tstg, Tc -55 to +125 C TJ -55 to +125 C dv/dt 10,000 V/s THERMAL CHARACTERISTICS Thermal Resistance - Junction to Case Per Leg RJC 2.43 C/W Thermal Resistance - Junction to Ambient (Note 1.) Per Leg RJA 68 C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2.) see Figure 2 IF = 5 Amps, TJ = 25C IF = 5 Amps, TJ = 100C IF = 10 Amps, TJ = 25C IF = 10 Amps, TJ = 100C Maximum Instantaneous Reverse Current (Note 2.) see Figure 4 (VR = 35 V, TJ = 25C) (VR = 35 V, TJ = 100C) (VR = 17.5 V, TJ = 25C) (VR = 17.5 V, TJ = 100C) VF Volts Per Leg 0.47 0.41 0.56 0.55 IR mA Per Leg 2.0 30 0.20 5.0 1. Rating applies when using minimum pad size, FR4 PC Board 2. Pulse Test: Pulse Width 250 s, Duty Cycle 2.0%. http://onsemi.com 109 MBRD1035CTL " "',-'-'(.,(+0+.++'-&), " "',-'-'(.,(+0+.++'-&), TYPICAL CHARACTERISTICS -# -# -# -# -# -# -# / "',-'-'(., (+0+ /(%- /(%-, Figure 1. Typical Forward Voltage Per Leg " + &1"&.&+/+,.++'-&), " + +/+,.++'-&), -# /+ +/+, /(%- /(%-, -# -# -# -# Figure 2. Maximum Forward Voltage Per Leg / &1"&.& "',-'-'(., (+0+ /(%- /(%-, Figure 3. Typical Reverse Current Per Leg -# /+ +/+, /(%- /(%-, Figure 4. Maximum Reverse Current Per Leg http://onsemi.com 110 98 ,*.+ 0/ .-2 2% "E@ "D "E@ "D "E@ "D "E@ "D )( /+ )(0+",,")-"('0--, " ( /+ (+0+.++'-&), MBRD1035CTL ;G:F @!O ,*.+ 0/ .-2 2% "E@ "D "E@ "D "E@ "D "E@ "D )"-'E -# Figure 6. Forward Power Dissipation Per Leg -# +-()+-"' -&)+-.+ Figure 5. Current Derating Per Leg "( /+ (+0+ .++'- &), -% % -&)+-.+ 98 +# 0 +# 0 +# 0 +# 0 +# 0 /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 7. Capacitance Per Leg Figure 8. Typical Operating Temperature Derating Per Leg * * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ = TJmax - r(t)(Pf + Pr) where TJ may be calculated from the equation: r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax - r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. http://onsemi.com 111 G I -+',"'--!+&%+,",-''(+&%"3 MBRD1035CTL .-2 2% ,"' % ).%, +I?AI +I?A * GI I -"& H G I-+',"'--!+&%+,",-''(+&%"3 Figure 9. Thermal Response Junction to Case (Per Leg) .-2 2% ,"' % ).%, +I?AI +I?A * GI I -"& H Figure 10. Thermal Response Junction to Ambient (Per Leg) http://onsemi.com 112 Preferred Device " 18(3 (&5,),(3 D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. These state-of-the-art devices have the following features: * * * * * * Guardring for Stress Protection Low Forward Voltage 150C Operating Junction Temperature Epoxy Meets UL94, VO at 1/8 Short Heat Sink Tab Manufactured -- Not Sheared! Similar in Size to the Industry Standard TO-220 Package http://onsemi.com SCHOTTKY BARRIER RECTIFIER 10 AMPERES 45 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 1.7 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 units per plastic tube Available in 24 mm Tape and Reel, 800 units per 13 reel by adding a "T4" suffix to the part number Marking: MBRB1045 D2PAK CASE 418B PLASTIC MARKING DIAGRAM MAXIMUM RATINGS Rating MBRB1045 Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 Volts Average Rectified Forward Current (Rated VR) TC = 135C IF(AV) 10 Amps MBRB1045 = Device Code Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 135C IFRM 20 Amps ORDERING INFORMATION Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM Operating Junction and Storage Temperature Range TJ, Tstg -65 to +150 C dv/dt 10000 V/s Voltage Rate of Change (Rated VR) Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 0 Device 150 Amps 113 Package Shipping MBRB1045 D2PAK 50 Units/Tube MBRB1045T4 D2PAK 800/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MBRB1045/D MBRB1045 THERMAL CHARACTERISTICS Characteristic Thermal Resistance -- Junction to Case (Note 1.) -- Junction to Ambient (Note 1.) Symbol Value Unit RJC RJA 1.0 34 C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2.) (IF = 10 Amps, TJ = 125C) (IF = 20 Amps, TJ = 125C) (IF = 20 Amps, TJ = 25C) VF Maximum Instantaneous Reverse Current (Note 2.) (Rated dc Voltage, TJ = 125C) (Rated dc Voltage, TJ = 25C) IR Volts 0.57 0.72 0.84 mA 15 0.1 1. When mounted using minimum recommended pad size on FR-4 board. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% -# >"',-'-'(.,(+0+.++'-&), >"',-'-'(.,(+0+.++'-&), -# K "',-'-'(., /(%- /(%-, K "',-'-'(., /(%- /(%-, Figure 1. Maximum Forward Voltage Figure 2. Typical Forward Voltage http://onsemi.com 114 MBRB1045 "+ +/+,.++'-B "+ +/+,.++'-B -# /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 3. Maximum Reverse Current Figure 4. Typical Reverse Current )"-'E /+ +/+, /(%- /(%-, Figure 8. Maximum Surge Capability Figure 5. Typical Capacitance +- /(%- ))%" 98 ,*.+ 0/ '.&+ ( 2%, - !O - , -&)+-.+ )/ /+ (+0+)(0+",,")-"('0--, ",& )$!% 0/.++'-&), "/ /+ (+0+.++'-&), 98 ,*.+ 0/ Figure 6. Current Derating, Case, RJC = 1.0 C/W "/ /+ (+0+ .++'- &), Figure 7. Forward Power Dissipation http://onsemi.com 115 Preferred Device " 18(3 (&5,),(3 D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: * * * * * * * http://onsemi.com SCHOTTKY BARRIER RECTIFIER 15 AMPERES 45 VOLTS Center-Tap Configuration Guardring for Stress Protection Low Forward Voltage 150C Operating Junction Temperature Epoxy Meets UL94, VO at 1/8 Short Heat Sink Tab Manufactured -- Not Sheared! Similar in Size to the Industry Standard TO-220 Package Mechanical Characteristics * Case: Epoxy, Molded * Weight: 1.7 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 4 * Lead and Mounting Surface Temperature for Soldering Purposes: * * * 260C Max. for 10 Seconds Shipped 50 units per plastic tube Available in 24 mm Tape and Reel, 800 units per 13 reel by adding a "T4" suffix to the part number Marking: B1545T 1 3 D2PAK CASE 418B STYLE 3 MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR, TC = 105C) Total Device IF(AV) 7.5 15 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 105C) IFRM 15 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM Storage Temperature Range Tstg -65 to +175 C Operating Junction Temperature TJ -65 to +150 C dv/dt 10,000 V/s Voltage Rate of Change (Rated VR) MARKING DIAGRAM B1545T B1545T = Device Code ORDERING INFORMATION 1.0 A Device Package Shipping MBRB1545CT D2PAK 50/Rail MBRB1545CTT4 D2PAK 800/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 3 116 Publication Order Number: MBRB1545CT/D MBRB1545CT THERMAL CHARACTERISTICS (Per Leg) Characteristic Thermal Resistance -- Junction to Case -- Junction to Ambient (Note 1.) Symbol Value Unit RJC RJA 2.0 50 C/W ELECTRICAL CHARACTERISTICS (Per Leg) Maximum Instantaneous Forward Voltage (Note 2.) (iF = 7.5 Amps, TJ = 125C) (iF = 15 Amps, TJ = 125C) (iF = 15 Amps, TJ = 25C) VF Maximum Instantaneous Reverse Current (Note 2.) (Rated dc Voltage, TJ = 125C) (Rated dc Voltage, TJ = 25C) iR Volts 0.57 0.72 0.84 mA 15 0.1 " ++/+,%$ .++'-B > "',-'-'(.,(+0+.++'-&), 1. When mounted using minimum recommended pad size on FR-4 board. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. K "',-'-'(., (+0+ /(%- /(%-, ")$ "/ ")$ "/ ")$ "/ ")$ "/ ,*.+ 0/ Figure 2. Typical Reverse Current, Per Leg "//+ (+0+.++'-&), )//+ (+0+)(0+",,")-"('0--, -# 20 /+ +/+, /(%- /(%-, Figure 1. Typical Forward Voltage, Per Leg 0 "/ /+ (+0+ .++'- &), +- /(%- ))%" +# 0 ,*.+ 0/ Figure 3. Typical Forward Power Dissipation - , -&)+-.+ Figure 4. Current Derating, Case http://onsemi.com 117 Preferred Device " 18(3 (&5,),(3 D2PAK Surface Mount Power Package Employs the use of the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: * Package Designed for Power Surface Mount Applications * Center-Tap Configuration * Guardring for Stress Protection * Low Forward Voltage * 150C Operating Junction Temperature * Epoxy Meets UL94, VO at 1/8 * Short Heat Sink Tab Manufactured -- Not Sheared! * Similar in Size to Industry Standard TO-220 Package http://onsemi.com SCHOTTKY BARRIER RECTIFIER 20 AMPERES 60 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 1.7 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * 4 Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 units per plastic tube Available in 24 mm Tape and Reel, 800 units per 13 reel by adding a "T4" suffix to the part number Marking: B2060T 1 3 D2PAK CASE 418B STYLE 3 MAXIMUM RATINGS (Per Leg) Rating MARKING DIAGRAM Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 60 V Average Rectified Forward Current (Rated VR, TC = 110C) Total Device IF(AV) 10 20 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 100C) IFRM 20 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 0.5 A Storage Temperature Range Tstg -65 to +175 C Operating Junction Temperature TJ -65 to +150 C dv/dt 10,000 V/s Voltage Rate of Change (Rated VR) Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 B2060T B2060T = Device Code ORDERING INFORMATION Device 118 Package Shipping MBRB2060CT D2PAK 50/Rail MBRB2060CTT4 D2PAK 800/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MBRB2060CT/D MBRB2060CT THERMAL CHARACTERISTICS (Per Leg) Characteristic Symbol Value Unit RJC RJA 2.0 50 C/W Thermal Resistance -- Junction to Case -- Junction to Ambient (Note 1.) ELECTRICAL CHARACTERISTICS (Per Leg) Maximum Instantaneous Forward Voltage (Note 2.) (iF = 20 Amps, TJ = 125C) (iF = 20 Amps, TJ = 25C) vF Maximum Instantaneous Reverse Current (Note 2.) (Rated dc Voltage, TJ = 125C) (Rated dc Voltage, TJ = 25C) iR Volts 0.85 0.95 mA 150 0.15 -# " ++/+,.++'-B > "',-'-'(.,(+0+.++'-&), 1. When mounted using minimum recommended pad size on FR-4 board. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. -# -# -# K "',-'-'(., /(%- /(%-, -# +- /(%- ))%" +# 0 ,*.+ 0/ /+ +/+, /(%- /(%-, Figure 2. Typical Reverse Current Per Diode /+ )(0+0--, " //+ (+0+.++'-&), Figure 1. Typical Forward Voltage Per Diode ")$ "/ -# )" ")$ "/ ")$ "/ ,*.+ 0/ - , -&)+-.+ Figure 3. Typical Current Derating, Case, Per Leg /+ .++'- &), Figure 4. Average Power Dissipation and Average Current http://onsemi.com 119 Preferred Device " 18(3 (&5,),(3 D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the use of the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: * * * * * * * * http://onsemi.com SCHOTTKY BARRIER RECTIFIER 20 AMPERES 100 VOLTS Package Designed for Power Surface Mount Applications Center-Tap Configuration Guardring for Stress Protection Low Forward Voltage 150C Operating Junction Temperature Epoxy Meets UL94, VO at 1/8 Short Heat Sink Tab Manufactured -- Not Sheared! Similar in Size to Industry Standard TO-220 Package Mechanical Characteristics * Case: Epoxy, Molded * Weight: 1.7 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * 4 Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 units per plastic tube Available in 24 mm Tape and Reel, 800 units per 13 reel by adding a "T4" suffix to the part number Marking: B20100 1 3 D2PAK CASE 418B STYLE 3 MAXIMUM RATINGS (Per Leg) MARKING DIAGRAM Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current (Rated VR, TC = 110C) Total Device IF(AV) 10 20 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 100C) IFRM 20 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Rating B20100 Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 0.5 A Storage Temperature Range Tstg -65 to +175 C Operating Junction Temperature TJ -65 to +150 C dv/dt 10,000 V/s Voltage Rate of Change (Rated VR) Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 120 B20100 = Device Code ORDERING INFORMATION Device Package Shipping MBRB20100CT D2PAK 50/Rail MBRB20100CTT4 D2PAK 800/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MBRB20100CT/D MBRB20100CT THERMAL CHARACTERISTICS (Per Leg) Characteristic Symbol Value Unit RJC RJA 2.0 50 C/W Thermal Resistance -- Junction to Case -- Junction to Ambient (Note 1.) ELECTRICAL CHARACTERISTICS (Per Leg) Maximum Instantaneous Forward Voltage (Note 2.) (iF = 10 Amp, TC = 125C) (iF = 10 Amp, TC = 25C) (iF = 20 Amp, TC = 125C) (iF = 20 Amp, TC = 25C) vF Maximum Instantaneous Reverse Current (Note 2.) (Rated dc Voltage, TJ = 125C) (Rated dc Voltage, TJ = 25C) iR Volts 0.75 0.85 0.85 0.95 mA 6.0 0.1 -# " ++/+,.++'-B > "',-'-'(.,(+0+.++'-&), 1. When mounted using minimum recommended pad size on FR-4 board. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. -# -# -# K "',-'-'(., /(%- /(%-, -# +- /(%- ))%" +# 0 ,*.+ 0/ /+ +/+, /(%- /(%-, Figure 2. Typical Reverse Current Per Diode /+ )(0+0--, " //+ (+0+.++'-&), Figure 1. Typical Forward Voltage Per Diode ")$ "/ -# )" ")$ "/ ")$ "/ ,*.+ 0/ - , -&)+-.+ /+ .++'- &), Figure 4. Average Power Dissipation and Average Current Figure 3. Typical Current Derating, Case, Per Leg http://onsemi.com 121 Preferred Device " 18(3 (&5,),(3 Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state-of-the-art device is designed for use in high frequency switching power supplies and converters with up to 48 volt outputs. They block up to 200 volts and offer improved Schottky performance at frequencies from 250 kHz to 5.0 MHz. * 200 Volt Blocking Voltage * Low Forward Voltage Drop * Guardring for Stress Protection and High dv/dt Capability http://onsemi.com SCHOTTKY BARRIER RECTIFIER 20 AMPERES 200 VOLTS (10,000 V/s) * Dual Diode Construction -- Terminals 1 and 3 Must be Connected for Parallel Operation at Full Rating Mechanical Characteristics * Case: Epoxy, Molded * Weight: 1.7 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 4 * Lead and Mounting Surface Temperature for Soldering * * * Purposes: 260C Max. for 10 Seconds Shipped 50 units per plastic tube Available in 24 mm Tape and Reel, 800 units per 13 reel by adding a "T4" suffix to the part number Marking: B20200 1 3 D2PAK CASE 418B STYLE 3 MAXIMUM RATINGS (Per Leg) Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 200 V Average Rectified Forward Current (At Rated VR, TC = 134C) Per Device Per Leg IF(AV) Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = +137C) Per Leg IFRM 20 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg -65 to +175 C Operating Junction Temperature TJ -65 to +150 C dv/dt 10,000 V/s Rating Voltage Rate of Change (Rated VR) Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 1 MARKING DIAGRAM B20200 A 10 20 B20200 = Device Code 122 ORDERING INFORMATION Device Package Shipping MBRB20200CT D2PAK 50/Rail MBRB20200CTT4 D2PAK 800/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MBRB20200CT/D MBRB20200CT THERMAL CHARACTERISTICS (Per Leg) Characteristic Thermal Resistance -- Junction to Case Symbol Value Unit RJC 2.0 C/W ELECTRICAL CHARACTERISTICS (Per Leg) Maximum Instantaneous Forward Voltage (Note 1.) (IF = 10 Amps, TC = 25C) (IF = 10 Amps, TC = 125C) (IF = 20 Amps, TC = 25C) (IF = 20 Amps, TC = 125C) VF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 25C) (Rated dc Voltage, TC = 125C) IR Volts 0.9 0.8 1.0 0.9 mA 1.0 50 DYNAMIC CHARACTERISTICS (Per Leg) Capacitance (VR = -5.0 V, TC = 25C, Frequency = 1.0 MHz) CT 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. http://onsemi.com 123 500 pF MBRB20200CT -# -# "+/+,.++'- + ""',-'(.,(+0+.++'-&) -# -# -# -# -# -# K "',-'-'(., /(%- /(%-, ,*.+ 0/ 98 ")$ "/ "/ /+ (+0+ .++'- &), 98 ,*.+ 0/ +- /(%- +# 0 98 ,*.+ 0/ - , -&)+-.+ -# +# 0 +- /(%- )"-'E "/+ (+0+.++'-&), / Figure 4. Current Derating, Case Figure 3. Forward Power Dissipation Figure 2. Typical Reverse Current (Per Leg) "/+ (+0+.++'-&), / )/+ )(0+",,")-"('0--, / -# /+ +/+, .++'- /(%-, Figure 1. Typical Forward Voltage (Per Leg) - &"'- -&)+-.+ /+ +/+, /(%- /(%-, Figure 5. Current Derating, Ambient Figure 6. Typical Capacitance (Per Leg) http://onsemi.com 124 Preferred Device " 18(3 (&5,),(3 ,0* 60&5,10 ,1'( D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. These state-of-the-art devices have the following features: * * * * * * http://onsemi.com SCHOTTKY BARRIER RECTIFIER 25 AMPERES 15 VOLTS Guardring for Stress Protection Low Forward Voltage 100C Operating Junction Temperature Epoxy Meets UL94, VO at 1/8 Short Heat Sink Tab Manufactured -- Not Sheared! Similar in Size to the Industry Standard TO-220 Package Mechanical Characteristics 4 * Case: Epoxy, Molded * Weight: 1.7 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * 1 3 Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 units per plastic tube Available in 24 mm Tape and Reel, 800 units per 13 reel by adding a "T4" suffix to the part number Marking: B2515L D2PAK CASE 418B STYLE 3 MARKING DIAGRAM B2515L MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 15 V Average Rectified Forward Current (Rated VR, TC = 90C) IF(AV) 25 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 100C) IFRM 30 A B2515L = Device Code Device Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 100 C dv/dt 10,000 V/s Voltage Rate of Change (Rated VR) Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 ORDERING INFORMATION 150 A 125 Package Shipping MBRB2515L D2PAK 50/Rail MBRB2515LT4 D2PAK 800/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MBRB2515L/D MBRB2515L THERMAL CHARACTERISTICS Characteristic Thermal Resistance -- Junction to Case -- Junction to Ambient (Note 1.) Symbol Value Unit RJC RJA 1.0 50 C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2.) (iF = 19 Amps, TJ = 70C) (iF = 25 Amps, TJ = 70C) (iF = 25 Amps, TJ = 25C) vF Maximum Instantaneous Reverse Current (Note 2.) (Rated dc Voltage, TJ = 70C) (Rated dc Voltage, TJ = 25C) IR Volts 0.28 0.42 0.45 mA 200 15 "+ +/+,%$ .++'-B -# ,*.+ 0/ " )$ 98 / Figure 2. Typical Reverse Leakage Current " Figure 1. Typical Forward Voltage -# -# /+ +/+, /(%- /(%-, K "',-'-'(., /(%- /(%-, " / /+ (+0+.++'-&), )/ /+ (+0+)(0+",,")-"('0--, > "',-'-'(.,(+0+.++'-&), 1. When mounted using minimum recommended pad size on FR-4 board. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. +- /(%- ))%" +# 0 98 ,*.+ 0/ "/ /+ (+0+ .++'- &), - , -&)+-.+ Figure 3. Typical Forward Power Dissipation Figure 4. Current Derating, Case http://onsemi.com 126 Preferred Device " 18(3 (&5,),(3 D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. These state-of-the-art devices have the following features: * * * * * * * Center-Tap Configuration Guardring for Stress Protection Low Forward Voltage 125C Operating Junction Temperature Epoxy Meets UL94, VO at 1/8 Short Heat Sink Tab Manufactured -- Not Sheared! Similar in Size to the Industry Standard TO-220 Package http://onsemi.com SCHOTTKY BARRIER RECTIFIER 25 AMPERES 35 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 1.7 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * 4 1 3 Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 units per plastic tube Available in 24 mm Tape and Reel, 800 units per 13 reel by adding a "T4" suffix to the part number Marking: B2535L D2PAK CASE 418B STYLE 3 MARKING DIAGRAM B2535L MAXIMUM RATINGS Please See the Table on the Following Page B2535L = Device Code ORDERING INFORMATION Device Package Shipping MBRB2535CTL D2PAK 50/Rail MBRB2535CTLT4 D2PAK 800/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 127 Publication Order Number: MBRB2535CTL/D MBRB2535CTL MAXIMUM RATINGS (Per Leg) Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 35 V Average Rectified Forward Current (Rated VR, TC = 110C) IF(AV) 12.5 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 90C) IFRM 25 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ -65 to +125 C dv/dt 10,000 V/s Symbol Value Unit RJC RJA 2.0 50 C/W Rating Voltage Rate of Change (Rated VR) THERMAL CHARACTERISTICS (Per Leg) Characteristic Thermal Resistance -- Junction to Case -- Junction to Ambient (Note 1.) ELECTRICAL CHARACTERISTICS (Per Leg) Maximum Instantaneous Forward Voltage (Note 2.) (iF = 25 Amps, TJ = 25C) (iF = 12.5 Amps, TJ = 125C) (iF = 12.5 Amps, TJ = 25C) vF Maximum Instantaneous Reverse Current (Note 2.) (Rated dc Voltage, TJ = 125C) (Rated dc Voltage, TJ = 25C) IR Volts 0.55 0.41 0.47 mA 500 10 1. When mounted using minimum recommended pad size on FR-4 board. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. http://onsemi.com 128 " ++/+,%$ .++'-B -# -# -# Figure 1. Typical Forward Voltage, Per Leg Figure 2. Typical Reverse Current, Per Leg ,*.+ 0/ ,"' 0/ +,",-"/ %( /+ +/+, /(%- /(%-, -# K "',-'-'(., /(%- /(%-, -# -# "/ /+ (+0+ .++'- &), "//+ (+0+.++'-&), )//+ (+0+)(0+",,")-"('0--, " "',-'-'(.,(+0+.++'-&) MBRB2535CTL +- /G ))%" +# 0 ,*.+ Figure 3. Typical Forward Power Dissipation - , -&)+-.+ Figure 4. Current Derating, Case http://onsemi.com 129 Preferred Device " 18(3 (&5,),(3 D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: * Center-Tap Configuration * Guardring for Stress Protection * Low Forward Voltage * 150C Operating Junction Temperature * Epoxy Meets UL94, VO at 1/8 * Short Heat Sink Tab Manufactured -- Not Sheared! * Similar in Size to the Industry Standard TO-220 Package http://onsemi.com SCHOTTKY BARRIER RECTIFIER 30 AMPERES 45 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 1.7 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 4 * Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds 1 * Shipped 50 units per plastic tube * Available in 24 mm Tape and Reel, 800 units per 13 reel by adding a * 3 D2PAK CASE 418B STYLE 3 "T4" suffix to the part number Marking: B2545T MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR, TC = 130C) Total Device IF(AV) 15 30 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 130C) IFRM 30 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM Storage Temperature Range Tstg -65 to +175 TJ -65 to +150 C dv/dt 10,000 V/s Operating Junction Temperature Voltage Rate of Change (Rated VR) Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 3 MARKING DIAGRAM B2545T B2545T = Device Code ORDERING INFORMATION Device 1.0 Package Shipping MBRB2545CT D2PAK 50/Rail MBRB2545CTT4 D2PAK 800/Tape & Reel A C 130 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MBRB2545CT/D MBRB2545CT THERMAL CHARACTERISTICS (Per Leg) Symbol Value Unit RJC RJA 1.5 50 C/W Maximum Instantaneous Forward Voltage (Note 2.) (iF = 30 Amps, TJ = 125C) (iF = 30 Amps, TJ = 25C) vF 0.73 0.82 Volts Maximum Instantaneous Reverse Current (Note 2.) (Rated dc Voltage, TJ = 125C) (Rated dc Voltage, TJ = 25C) iR 40 0.2 mA Characteristic Thermal Resistance -- Junction to Case -- Junction to Ambient (Note 1.) ELECTRICAL CHARACTERISTICS (Per Leg) 1. When mounted using minimum recommended pad size on FR-4 board. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. " ++/+,%$ .++'-B -# ")$ +,",-"/ %( "/ )"-"/ %(, ")$ "/ Figure 2. Typical Reverse Current, Per Leg Figure 1. Typical Forward Voltage, Per Leg -# /+ +/+, /(%- /(%-, ,*.+ 0/ -# K "',-'-'(., (+0+ /(%- /(%-, " /+ (+0+ .++'- &), "//+ (+0+.++'-&), )//+ (+0+)(0+",,")-"('0--, > "',-'-'(.,(+0+.++'-&), ,*.+ 0/ +- /(%- ))%" +# 0 - , -&)+-.+ Figure 4. Current Derating, Case Figure 3. Typical Forward Power Dissipation http://onsemi.com 131 Preferred Device " 18(3 (&5,),(3 Using the Schottky Barrier principle with a proprietary barrier metal. These state-of-the-art devices have the following features: * * * * Guardring for Stress Protection Maximum Die Size 150C Operating Junction Temperature Short Heat Sink Tab Manufactured - Not Sheared http://onsemi.com Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.7 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal SCHOTTKY BARRIER RECTIFIER 30 AMPERES 30 VOLTS Leads are Readily Solderable 260C Max. for 10 Seconds Shipped 50 Units per Plastic Tube Available in 24 mm Tape and Reel, 800 Units per 13" Reel by Adding a "T4" Suffix to the Part Number Marking: B3030 * Lead and Mounting Surface Temperature for Soldering Purposes: * * * 4 1 3 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 30 V Average Rectified Forward Current (At Rated VR, TC = 134C) Per Device Per Leg IF(AV) Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = +137C) Per Leg IFRM 30 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) IFSM 200 A Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 2.0 A Storage Temperature Range Tstg -55 to +150 C Operating Junction Temperature TJ -55 to +150 C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s Reverse Energy (Unclamped Inductive Surge) (Inductance = 3 mH, TC = 25C) W 100 mJ D2PAK CASE 418B STYLE 3 A MARKING DIAGRAM 30 15 B3030 B3030 = Device Code ORDERING INFORMATION Device Package Shipping MBRB3030CT D2PAK 50/Rail MBRB3030CTT4 D2PAK 800/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 132 Publication Order Number: MBRB3030CT/D MBRB3030CT THERMAL CHARACTERISTICS (Per Leg) Characteristic Thermal Resistance -- Junction to Case -- Junction to Ambient (Note 1.) Symbol Value Unit RJC RJA 1.0 50 C/W ELECTRICAL CHARACTERISTICS (Per Leg) Maximum Instantaneous Forward Voltage (Note 2.), Per Leg (IF = 15 Amps, TC = +25C) (IF = 15 Amps, TC = +150C) (IF = 30 Amps, TC = +25C) (IF = 30 Amps, TC = +150C) VF Maximum Instantaneous Reverse Current (Note 2.), Per Leg (Rated dc Voltage, TC = +25C) (Reverse Voltage = 10 V, TC = +150C) (Rated dc Voltage, TC = +150C) IR Volts 0.54 0.47 0.67 0.66 mA 0.6 46 145 1. When mounted using minimum recommended pad size on FR-4 board. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. http://onsemi.com 133 MBRB3030CT IIII -# II III III II II II Figure 1. Maximum Forward Voltage, Per Leg Figure 2. Typical Forward Voltage, Per Leg III III III III III -# -# /+ +/+, /(%- / Figure 3. Maximum Reverse Current, Per Leg Figure 4. Typical Reverse Current, Per Leg -# &1"&.& -2)"% /+ +/+, /(%- / Figure 5. Capacitance http://onsemi.com 134 IIII IIII II III III /+ +/+, /(%- / )"-'E -# / "',-'-'(., /(%- / III / "',-'-'(., /(%- /(%-, " + +/+,.++'- " "',-'-'(.,(+0+.++'- " + +/+,.++'- " "',-'-'(.,(+0+.++'- ELECTRICAL CHARACTERISTICS MBRB3030CT +# 0 ,*.+ 0/ ")$ )"-"/ "/ %( +,",-"/ %( " //+ (+0+.++'- " //+ (+0+.++'- TYPICAL CHARACTERISTICS - , -&)+-.+ +# 0 ")$ )"-"/ "/ %( - &"'- -&)+-.+ )//+ (+0+)(0+",,")-"('0 +,",-"/ %( ,*.+ 0/ +,",-"/ %( -# ")$ )"-"/ "/ %( ,*.+ 0/ "/ /+ (+0+ .++'- Figure 8. Current Derating, Free Air Figure 9. Forward Power Dissipation +I-"/-+',"'--!+&% +,",-''(+&%"3 " //+ (+0+.++'- - &"'- -&)+-.+ Figure 7. Current Derating +# 0 ")$ )"-"/ "/ %( Figure 6. Current Derating, Infinite Heatsink ,*.+ 0/ +,",-"/ %( ,"' % ).%, )E@ IE I )E@ -"& .-2 2% IE I )$ )(0+ )E@ >H E:6@ D; 6C :FJ>K6A:CI HFJ6G: EDL:G EJAH: -#% )E@ * +#% 4 * GI IE GIE GI5 L=:G: -#% I=: >C8G:6H: >C ?JC8I>DC I:BE:G6IJG: 67DK: I=: A:69 I:BE:G6IJG: GI CDGB6A>O:9 K6AJ: D; IG6CH>:CI I=:GB6A G:H>HI6C8: 6I I>B: I ;DG :M6BEA: GI GI IE CDGB6A>O:9 K6AJ: D; IG6CH>:CI I=:GB6A G:H>HI6C8: 6I I>B: I IE I -"& BH Figure 10. Thermal Response http://onsemi.com 135 " 18(3 (&5,),(3 . . . using the Schottky Barrier principle with a proprietary barrier metal. These state-of-the-art devices have the following features: http://onsemi.com Features: * Dual Diode Construction -- * * * * * SCHOTTKY BARRIER RECTIFIER 30 AMPERES 30 VOLTS May be Paralleled for Higher Current Output Guardring for Stress Protection Low Forward Voltage Drop 125C Operating Junction Temperature Maximum Die Size Short Heat Sink Tab Manufactured -- Not Sheared! MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 30 V IO 15 30 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 115C) IFRM 30 A D2PAK CASE 418B PLASTIC Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 300 A MARKING DIAGRAM Peak Repetitive Reverse Surge Current (1.0 s, 1.0 kHz) IRRM 2.0 A B3030CTL YWW Storage Temperature Range Tstg -55 to +150 C Operating Junction Temperature Range TJ -55 to +125 C Voltage Rate of Change (Rated VR, TJ = 25C) dv/dt 10,000 V/s Reverse Energy, Unclamped Inductive Surge (TJ = 25C, L = 3.0 mH) EAS 224.5 mJ Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 115C) Per Device 1 October, 2000 - Rev. 1 3 B3030CTL = Device Code Y = Year WW = Work Week ORDERING INFORMATION This document contains information on a new product. Specifications and information herein are subject to change without notice. Semiconductor Components Industries, LLC, 2000 4 136 Device Package Shipping MBRB3030CTL D2PAK 50/Rail MBRB3030CTLT4 D2PAK 800/Tape & Reel Publication Order Number: MBRB3030CTL/D MBRB3030CTL THERMAL CHARACTERISTICS Symbol Value Unit Thermal Resistance, Junction to Ambient (Note 1.) Characteristic RJA 50 C/W Thermal Resistance, Junction to Case RJC 1.0 C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2.) (IF = 15 A, TJ = 25C) (IF = 30 A, TJ = 25C) VF Maximum Instantaneous Reverse Current (Note 2.) (Rated VR, TJ = 25C) (Rated VR, TJ = 125C) IR V 0.44 0.51 mA 2.0 195 1. Mounted using minimum recommended pad size on FR-4 board. 2. Pulse Test: Pulse Width = 250 s, Duty Cycle 2.0%. All device data is "Per Leg" except where noted. -# -# / &1"&.& "',-'-'(., (+0+ /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage "+ &1"&.&+/+,.++'-&), -# -# / "',-'-'(., (+0+ /(%- /(%-, "+ +/+,.++'-&), ""',-'-'(.,(+0+.++'-&), ""',-'-'(.,(+0+.++'-&), /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current http://onsemi.com 137 )( /+ )(0+",,")-"('0--, "( /+ (+0+.++'-&), MBRB3030CTL 98 ,*.+ 0/ "E@ "D "E@ "D "E@ "D "E@ "D +* @!O 98 ,*.+ 0/ "E@ "D "E@ "D "E@ "D -# "( /+ (+0+ .++'- &), Figure 5. Current Derating Figure 6. Forward Power Dissipation -# ")$)$,.+ .++'-&), )"-'E "E@ "D - , -&)+-.+ -# + --+',"'--!+&%+,",-''(+&%"3 /+ +/+, /(%- /(%-, I -"& H:8DC9H Figure 7. Typical Capacitance Figure 8. Typical Unclamped Inductive Surge +I?8I +I?8GI I -"& H:8DC9H Figure 9. Typical Thermal Response http://onsemi.com 138 MBRB3030CTL 1'(.,0* (7(34( 0(3*: +$3$&5(3,45,&4 1) 18(3 (&5,),(34 Prepared by: David Shumate & Larry Walker Motorola Semiconductor Products Sector ABSTRACT applied to devices used in this switching power circuitry. This technology lends itself to lower reverse breakdown voltages. This combination of high voltage spikes and low reverse breakdown voltage devices can lead to reverse energy destruction of power rectifiers in their applications. This phenomena, however, is not limited to just schottky technology. In order to meet the challenges of these situations, power semiconductor manufacturers attempt to characterize their devices with respect to reverse energy robustness. The typical reverse energy specification, if provided at all, is usually given as energy-to-failure (mJ) with a particular inductor specified for the UIS test circuit. Sometimes, the peak reverse test current is also specified. Practically all reverse energy characterizations are performed using the UIS test circuit shown in Figure 10. Typical UIS voltage and current waveforms are shown in Figure 11. In order to provide the designer with a more extensive characterization than the above mentioned one-point approach, a more comprehensive method for characterizing these devices was developed. A designer can use the given information to determine the appropriateness and safe operating area (SOA) of the selected device. Power semiconductor rectifiers are used in a variety of applications where the reverse energy requirements often vary dramatically based on the operating conditions of the application circuit. A characterization method was devised using the Unclamped Inductive Surge (UIS) test technique. By testing at only a few different operating conditions (i.e. different inductor sizes) a safe operating range can be established for a device. A relationship between peak avalanche current and inductor discharge time was established. Using this relationship and circuit parameters, the part applicability can be determined. This technique offers a power supply designer the total operating conditions for a device as opposed to the present single-data-point approach. INTRODUCTION In today's modern power supplies, converters and other switching circuitry, large voltage spikes due to parasitic inductance can propagate throughout the circuit, resulting in catastrophic device failures. Concurrent with this, in an effort to provide low-loss power rectifiers, i.e. devices with lower forward voltage drops, schottky technology is being !" ! ,) ,0"-! !+ "'.-(+ +"' .++'+ 0!%"' "( / +"' /(%- "'.-(+ !+ ,0"-! .- /(%- Figure 10. Simplified UIS Test Circuit http://onsemi.com 139 MBRB3030CTL Suggested Method of Characterization "'.-(+ .++'- Example Application The device used for this example was an MBR3035CT, which is a 30 A (15 A per side) forward current, 35 V reverse breakdown voltage rectifier. All parts were tested to destruction at 25C. The inductors used for the characterization were 10, 3.0, 1.0 and 0.3 mH. The data recorded from the testing were peak reverse current (Ip), peak reverse breakdown voltage (BVR), maximum withstand energy, inductance and inductor discharge time (see Table 1). A plot of the Peak Reverse Current versus Time at device destruction, as shown in Figure 12, was generated. The area under the curve is the region of lower reverse energy or lower stress on the device. This area is known as the safe operating area or SOA. .+/+, /(%- -"& H Figure 11. Typical Voltage and Current UIS Waveforms Utilizing the UIS test circuit in Figure 10, devices are tested to failure using inductors ranging in value from 0.01 to 159 mH. The reverse voltage and current waveforms are acquired to determine the exact energy seen by the device and the inductive current decay time. At least 4 distinct inductors and 5 to 10 devices per inductor are used to generate the characteristic current versus time relationship. This relationship when coupled with the application circuit conditions, defines the SOA of the device uniquely for this application. .", !+-+"3-"(' .+/ , ()+-"' + -"& H Figure 12. Peak Reverse Current versus Time for DUT http://onsemi.com 140 MBRB3030CTL AAAAAAAAAAAAAAAAA AAAA AAA AAAA AAAA AAA AAAA AAAAAAAAAAAAAAAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA AAAA AAA AAAA Table 1. UIS Test Data PART NO. IP (A) BVR (V) ENERGY (mJ) L (mH) TIME (s) 1 46.6 65.2 998.3 1 715 2 41.7 63.4 870.2 1 657 3 46.0 66.0 1038.9 1 697 4 42.7 64.8 904.2 1 659 5 44.9 64.8 997.3 1 693 6 44.1 64.1 865.0 1 687 7 26.5 63.1 1022.6 3 1261 8 26.4 62.8 1024.9 3 1262 9 24.4 62.2 872.0 3 1178 10 27.6 62.9 1091.0 3 1316 11 27.7 63.2 1102.4 3 1314 12 17.9 62.6 1428.6 10 2851 13 18.9 62.1 1547.4 10 3038 14 18.8 60.7 1521.1 10 3092 15 19.0 62.6 1566.2 10 3037 16 74.2 69.1 768.4 0.3 322 17 77.3 69.6 815.4 0.3 333 18 75.2 68.9 791.7 0.3 328 19 77.3 69.6 842.6 0.3 333 20 73.8 69.1 752.4 0.3 321 21 75.6 69.2 823.2 0.3 328 22 74.7 68.6 747.5 0.3 327 23 78.4 70.3 834.0 0.3 335 24 70.5 66.6 678.4 0.3 317 25 78.3 69.4 817.3 0.3 339 The procedure to determine if a rectifier is appropriate, from a reverse energy standpoint, to be used in the application circuit is as follows: a. Obtain "Peak Reverse Current versus Time" curve from data book. b. Determine steady state operating voltage (OV) of circuit. c. Determine parasitic inductance (L) of circuit section of interest. d. Obtain rated breakdown voltage (BVR) of rectifier from data book. e. From the following relationships, V L d i(t) dt I As an example, the values were chosen as L = 200 H, OV = 12 V and BVR = 35 V. Figure 13 illustrates the example. Note the UIS characterization curve, the parasitic inductor current curve and the safe operating region as indicated. "E:6@ V -"& +%-"(',!") . -( "+."- )+,"-", .", !+-+"3-"(' .+/ , ()+-"' + -"& H Figure 13. DUT Peak Reverse and Circuit Parasitic Inductance Current versus Time SUMMARY Traditionally, power rectifier users have been supplied with single-data-point reverse-energy characteristics by the supplier's device data sheet; however, as has been shown here and in previous work, the reverse withstand energy can vary significantly depending on the application. What was done in this work was to create a characterization scheme by which the designer can overlay or map their particular requirements onto the part capability and determine quite accurately if the chosen device is applicable. This characterization technique is very robust due to its statistical approach, and with proper guardbanding (6) can be used to give worst-case device performance for the entire product line. A "typical" characteristic curve is probably the most applicable for designers allowing them to design in their own margins. References 1. Borras, R., Aliosi, P., Shumate, D., 1993, "Avalanche Capability of Today's Power Semiconductors, "Proceedings, European Power Electronic Conference," 1993, Brighton, England (BVR OV) t L 2. Pshaenich, A., 1985, "Characterizing Overvoltage Transient Suppressors," Powerconversion International, June/July a "designer" l versus t curve is plotted alongside the device characteristic plot. f. The point where the two curves intersect is the current level where the devices will start to fail. A peak inductor current below this intersection should be chosen for safe operating. http://onsemi.com 141 Preferred Device " 18(3 (&5,),(3 Using the Schottky Barrier principle with a proprietary barrier metal. These state-of-the-art devices have the following features: * * * * Guardring for Stress Protection Maximum Die Size 150C Operating Junction Temperature Short Heat Sink Tab Manufactured - Not Sheared http://onsemi.com Mechanical Characteristics * Case: Epoxy, Molded * Weight: 1.7 Grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal SCHOTTKY BARRIER RECTIFIER 40 AMPERES 30 VOLTS Leads Readily Solderable * Shipped 50 Units per Plastic Tube * Available in 24 mm Tape and Reel, 800 Units per 13 Reel by Adding a "T4" Suffix to the Part Number * Marking: B4030 4 1 MAXIMUM RATINGS Rating 3 Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 30 V Average Rectified Forward Current (At Rated VR) TC = +115C (Note 1.) IF(AV) 40 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz) TC = +112C IFRM 80 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 300 A Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 2.0 A Storage Temperature Range Tstg -65 to +150 C TJ -65 to +150 C dv/dt 10,000 V/s Operating Junction Temperature Range Voltage Rate of Change (Rated VR) Reverse Energy (Unclamped Inductive Surge) (TC = 25C, L = 3.0 mH) D2PAK CASE 418B STYLE 3 MARKING DIAGRAM B4030 W 600 B4030 = Device Code ORDERING INFORMATION Device Package Shipping MBRB4030 D2PAK 50/Rail MBRB4030T4 D2PAK 800/Tape & Reel mJ Preferred devices are recommended choices for future use and best overall value. 1. Rating applies when pins 1 and 3 are connected. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 1 142 Publication Order Number: MBRB4030/D MBRB4030 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance - Junction to Case RJC 1.0 C/W Thermal Resistance - Junction to Ambient (Note 3.) RJA 50 C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Notes 2. and 4.), per Device (IF = 20 A, TC = + 25C) (IF = 20 A, TC = +150C) (IF = 40 A, TC = + 25C) (IF = 40 A, TC = +150C) VF Maximum Instantaneous Reverse Current (Note 4.), per Device (Rated DC Voltage, TC = + 25C) (Rated DC Voltage, TC = +125C) IR V 0.46 0.34 0.55 0.45 mA 0.35 150 2. Rating applies when pins 1 and 3 are connected. 3. Rating applies when surface mounted on the miniumum pad size recommended. 4. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% http://onsemi.com 143 MBRB4030 ELECTRICAL CHARACTERISTICS " "',-'-'(.,(+0+.++'-B )"',!(+--()"' " "',-'-'(.,(+0+.++'-B )"',!(+--()"' -# / "',-'-'(., /(%- / -# / "',-'-'(., /(%- / Figure 1. Maximum Forward Voltage " + +/+,.++'- -# -# /+ +/+, /(%- / Figure 3. Maximum Reverse Current /+ +/+, /(%- / -# -2)"% Figure 4. Typical Reverse Current )"-'E " + +/+,.++'- Figure 2. Typical Forward Voltage &1"&.& /+ +/+, /(%- / Figure 5. Maximum and Typical Capacitance http://onsemi.com 144 MBRB4030 +,",-"/ %( ")$ )"-"/ "/ %( ,*.+ 0/ " //+ (+0+.++'- )"',!(+--()"' " //+ (+0+.++'- )"',!(+--()"' ELECTRICAL CHARACTERISTICS +# 0 +,",-"/ %( ")$ )"-"/ "/ %( - , -&)+-.+ +# 0 ,*.+ 0/ ")$ )"-"/ "/ %( -# +,",-"/ %( ")$ )"-"/ "/ %( ,*.+ 0/ +,",-"/ %( Figure 7. Current Derating )//+ (+0+)(0+",,")-"('0--, )"',!(+--()"' " //+ (+0+.++'- )"',!(+--()"' - &"'- -&)+-.+ Figure 6. Current Derating, Infinite Heatsink ,.+ &(.'- (' &"'"&.& +(&&' ) ,"3 ,*.+ 0/ - &"'- -&)+-.+ "/ /+ (+0+ .++'- Figure 8. Current Derating, Free Air Figure 9. Forward Power Dissipation +I-"/-+',"'--!+&% +,",-''(+&%"3 ,"' % ).%, IE )E@ I )E@ -"& .-2 2% IE I )$ )(0+ )E@ >H E:6@ D; 6C :FJ>K6A:CI HFJ6G: EDL:G EJAH: -#% )E@ * +#% 4 * GI IE GIE GI5 L=:G: -#% I=: >C8G:6H: >C ?JC8I>DC I:BE:G6IJG: 67DK: I=: A:69 I:BE:G6IJG: GI CDGB6A>O:9 K6AJ: D; IG6CH>:CI I=:GB6A G:H>HI6C8: 6I I>B: I ;DG :M6BEA: GI GI IE CDGB6A>O:9 K6AJ: D; IG6CH>:CI I=:GB6A G:H>HI6C8: 6I I>B: I IE I -"& BH Figure 10. Thermal Response http://onsemi.com 145 1N5817 and 1N5819 are Preferred Devices 9,$. ($' (&5,),(34 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes. http://onsemi.com * Extremely Low VF * Low Stored Charge, Majority Carrier Conduction * Low Power Loss/High Efficiency SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 0.4 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead and Mounting Surface Temperature for Soldering Purposes: * * * * 220C Max. for 10 Seconds, 1/16 from case Shipped in plastic bags, 1000 per bag. Available Tape and Reeled, 5000 per reel, by adding a "RL" suffix to the part number Polarity: Cathode Indicated by Polarity Band Marking: 1N5817, 1N5818, 1N5819 AXIAL LEAD CASE 59-04 PLASTIC MAXIMUM RATINGS Please See the Table on the Following Page MARKING DIAGRAM 1N581x 1N581x = Device Code x = 7, 8 or 9 ORDERING INFORMATION Device Package Shipping 1N5817 Axial Lead 1000 Units/Bag 1N5817RL Axial Lead 5000/Tape & Reel 1N5818 Axial Lead 1000 Units/Bag 1N5818RL Axial Lead 5000/Tape & Reel 1N5819 Axial Lead 1000 Units/Bag 1N5819RL Axial Lead 5000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 4 146 Publication Order Number: 1N5817/D 1N5817, 1N5818, 1N5819 MAXIMUM RATINGS Symbol 1N5817 1N5818 1N5819 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 20 30 40 V Non-Repetitive Peak Reverse Voltage VRSM 24 36 48 V VR(RMS) 14 21 28 V RMS Reverse Voltage Average Rectified Forward Current (Note 5.) (VR(equiv) 0.2 VR(dc), TL = 90C, RJA = 80C/W, P.C. Board Mounting, see Note 8., TA = 55C) IO Ambient Temperature (Rated VR(dc), PF(AV) = 0, RJA = 80C/W) TA Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, half-wave, single phase 60 Hz, TL = 70C) Operating and Storage Junction Temperature Range (Reverse Voltage applied) 1.0 85 A 80 75 C IFSM 25 (for one cycle) A TJ, Tstg -65 to +125 C TJ(pk) 150 C Symbol Max Unit RJA 80 C/W Peak Operating Junction Temperature (Forward Current applied) THERMAL CHARACTERISTICS (Note 5.) Characteristic Thermal Resistance, Junction to Ambient ELECTRICAL CHARACTERISTICS (TL = 25C unless otherwise noted) (Note 5.) Symbol 1N5817 1N5818 1N5819 Unit (iF = 0.1 A) (iF = 1.0 A) (iF = 3.0 A) vF 0.32 0.45 0.75 0.33 0.55 0.875 0.34 0.6 0.9 V Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 6.) (TL = 25C) (TL = 100C) IR 1.0 10 1.0 10 1.0 10 Characteristic Maximum Instantaneous Forward Voltage (Note 6.) 5. Lead Temperature reference is cathode lead 1/32 from case. 6. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. http://onsemi.com 147 mA 1N5817, 1N5818, 1N5819 NOTE 7. -- DETERMINING MAXIMUM RATINGS -+++'-&)+-.+ Reverse power dissipation and the possibility of thermal runaway must be considered when operating this rectifier at reverse voltages above 0.1 VRWM. Proper derating may be accomplished by use of equation (1). +# 0 /+ +/+, /(%- /(%-, (2) -+++'-&)+-.+ (3) Inspection of equations (2) and (3) reveals that TR is the ambient temperature at which thermal runaway occurs or where TJ = 125C, when forward power is zero. The transition from one boundary condition to the other is evident on the curves of Figures 1, 2, and 3 as a difference in the rate of change of the slope in the vicinity of 115C. The data of Figures 1, 2, and 3 is based upon dc conditions. For use in common rectifier circuits, Table 1 indicates suggested factors for an equivalent dc voltage to use for conservative design, that is: /+ +/+, /(%- /(%-, Figure 2. Maximum Reference Temperature 1N5818 -+++'-&)+-.+ Step 1. Find VR(equiv). Read F = 0.65 from Table 1, Step 1. Find VR(equiv) = (1.41)(10)(0.65) = 9.2 V. Step 2. Find TR from Figure 2. Read TR = 109C Step 1. Find @ VR = 9.2 V and RJA = 80C/W. Step 3. Find PF(AV) from Figure 4. **Read PF(AV) = 0.5 W I(FM) = 10 and IF(AV) = 0.5 A. @ I(AV) Step 4. Find TA(max) from equation (3). Step 4. Find TA(max) = 109 - (80) (0.5) = 69C. +# 0 **Values given are for the 1N5818. Power is slightly lower for the 1N5817 because of its lower forward voltage, and higher for the 1N5819. /+ +/+, /(%- /(%-, Figure 3. Maximum Reference Temperature 1N5819 Table 1. Values for Factor F Half Wave Full Wave, Bridge Full Wave, Center Tapped* Load Resistive Capacitive* Resistive Capacitive Resistive Capacitive Sine Wave 0.5 1.3 0.5 0.65 1.0 1.3 Square Wave 0.75 1.5 0.75 0.75 1.5 1.5 *Note that VR(PK) 2.0 Vin(PK). +# 0 (4) The factor F is derived by considering the properties of the various rectifier circuits and the reverse characteristics of Schottky diodes. EXAMPLE: Find TA(max) for 1N5818 operated in a 12-volt dc supply using a bridge circuit with capacitive filter such that IDC = 0.4 A (IF(AV) = 0.5 A), I(FM)/I(AV) = 10, Input Voltage = 10 V(rms), RJA = 80C/W. Circuit Figure 1. Maximum Reference Temperature 1N5817 Substituting equation (2) into equation (1) yields: VR(equiv) = Vin(PK) x F Figures 1, 2, and 3 permit easier use of equation (1) by taking reverse power dissipation and thermal runaway into consideration. The figures solve for a reference temperature as determined by equation (2). TA(max) = TR - RJAPF(AV) (1) TA(max) = TJ(max) - RJAPF(AV) - RJAPR(AV) where TA(max) = Maximum allowable ambient temperature TJ(max) = Maximum allowable junction temperature (125C or the temperature at which thermal runaway occurs, whichever is lowest) PF(AV) = Average forward power dissipation PR(AV) = Average reverse power dissipation RJA = Junction-to-ambient thermal resistance TR = TJ(max) - RJAPR(AV) Use line to center tap voltage for Vin. http://onsemi.com 148 )/ /+ )(0+",,")-"('0--, + #%-!+&%+,",-'#.'-"(' -( % 0 1N5817, 1N5818, 1N5819 (-! %, -( !-,"'$ *.% %' -! &1"&.& -2)"% ,>C: 06K: "& +:H>HI>K: %D69 "/ 6E68>I>K: %D69H 98 ,*.+ 0/ -# "/ /+ (+0+ .++'- &) % % %' -! "'!, Figure 4. Steady-State Thermal Resistance GI-+',"'--!+&%+,",-''(+&%"3 { Figure 5. Forward Power Dissipation 1N5817-19 3#%I 3#% * GI )E@ IE )E@ -"& I .-2 2% IE I )$ )(0+ )E@ >H E:6@ D; 6C :FJ>K6A:CI HFJ6G: EDL:G EJAH: -#% )E@ * +#% 4 * GI IE GIE GI5 L=:G: -#% I=: >C8G:6H: >C ?JC8I>DC I:BE:G6IJG: 67DK: I=: A:69 I:BE:G6IJG: GI CDGB6A>O:9 K6AJ: D; IG6CH>:CI I=:GB6A G:H>HI6C8: 6I I>B: I ;GDB ><JG: >: GI GI IE CDGB6A>O:9 K6AJ: D; IG6CH>:CI I=:GB6A G:H>HI6C8: 6I I>B: I IE I -"& BH @ @ @ Figure 6. Thermal Response Mounting Method 3 Mounting Method 1 NOTE 8. -- MOUNTING DATA P.C. Board with 1-1/2 x 1-1/2 copper surface. P.C. Board with 1-1/2 x 1-1/2 copper surface. Data shown for thermal resistance junction-to-ambient (RJA) for the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie point temperature cannot be measured. % % % TYPICAL VALUES FOR RJA IN STILL AIR Mounting Method Lead Length, L (in) 1/8 1/4 1/2 3/4 RJA 1 52 65 72 85 C/W 2 67 80 87 100 C/W 3 50 Mounting Method 2 % C/W % /-(+ )"' &(.'-"' http://onsemi.com 149 (+ +(.' )%' @ 1N5817, 1N5818, 1N5819 NOTE 9. -- THERMAL CIRCUIT MODEL (For heat conduction through the leads) +, +% +# +#$ - - -# -%$ (Subscripts A and K refer to anode and cathode sides, respectively.) Values for thermal resistance components are: RL = 100C/W/in typically and 120C/W/in maximum RJ = 36C/W typically and 46C/W maximum. TA = Ambient Temperature TC = Case Temperature TL = Lead Temperature TJ = Junction Temperature RS = Thermal Resistance, Heatsink to Ambient RL = Thermal Resistance, Lead to Heatsink RJ = Thermal Resistance, Junction to Case PD = Power Dissipation ",&)$,.+ .++'-&) - N8A: -% ; !O ,JG<: EEA>:9 6I +6I:9 %D69 DC9>I>DCH '.&+ ( 2%, Figure 8. Maximum Non-Repetitive Surge Current " ++/+,.++'-B > "',-'-'(.,(+0+.++'-&) -$ -$ Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heatsink. Terms in the model signify: +,$ ) -% +%$ -# K "',-'-'(., (+0+ /(%- /(%-, ' ' ' /+ +/+, /(%- /(%-, Figure 7. Typical Forward Voltage Figure 9. Typical Reverse Current http://onsemi.com 150 1N5817, 1N5818, 1N5819 NOTE 10. -- HIGH FREQUENCY OPERATION )"-'E Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 10.) Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2.0 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss: it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage. ' ' ' -# ; &!O /+ +/+, /(%- /(%-, Figure 10. Typical Capacitance http://onsemi.com 151 MBR160 is a Preferred Device 9,$. ($' (&5,),(34 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes. * Low Reverse Current * Low Stored Charge, Majority Carrier Conduction * Low Power Loss/High Efficiency * Highly Stable Oxide Passivated Junction http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 50, 60 VOLTS Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 0.4 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead and Mounting Surface Temperature for Soldering Purposes: * * * * 220C Max. for 10 Seconds, 1/16 from case Shipped in plastic bags, 1000 per bag Available Tape and Reeled, 5000 per reel, by adding a "RL'' suffix to the part number Polarity: Cathode Indicated by Polarity Band Marking: B150, B160 AXIAL LEAD CASE 59-04 PLASTIC MAXIMUM RATINGS MARKING DIAGRAM Please See the Table on the Following Page B1x0 B1x0 x = Device Code = 5 or 6 ORDERING INFORMATION Device Package Shipping MBR150 Axial Lead 1000 Units/Bag MBR150RL Axial Lead 5000/Tape & Reel MBR160 Axial Lead 1000 Units/Bag MBR160RL Axial Lead 5000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 152 Publication Order Number: MBR150/D MBR150, MBR160 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Forward Current (Note 1.) (VR(equiv) 0.2 VR(dc), TL = 90C, RJA = 80C/W, P.C. Board Mounting, see Note 3., TA = 55C) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz, TL = 70C) Operating and Storage Junction Temperature Range (Reverse Voltage Applied) Peak Operating Junction Temperature (Forward Current Applied) Symbol MBR150 MBR160 Unit VRRM VRWM VR 50 60 Volts VR(RMS) 35 42 Volts IO 1.0 Amp IFSM 25 (for one cycle) Amps TJ, Tstg 65 to +150 C TJ(pk) 150 C Symbol Max Unit RJA 80 C/W Symbol Max Unit THERMAL CHARACTERISTICS (Notes 3. and 4.) Characteristic Thermal Resistance, Junction to Ambient ELECTRICAL CHARACTERISTICS (TL = 25C unless otherwise noted) (Note 1.) Characteristic Maximum Instantaneous Forward Voltage (Note 2.) (iF = 0.1 A) (iF = 1.0 A) (iF = 3.0 A) vF Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2.) (TL = 25C) (TL = 100C) iR Volt 0.550 0.750 1.000 1. Lead Temperature reference is cathode lead 1/32 from case. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. http://onsemi.com 153 mA 0.5 5.0 MBR150, MBR160 /+ +/+, /(%- /(%-, Figure 2. Typical Reverse Current* *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. )/ /+ (+0+ )(0+",,")-"('0--, > "',-'-'(.,(+0+.++'-&), -# " + +/+,.++'-B -# ,*.+ 0/ 98 ")$ "/ K "',-'-'(., /(%- /(%-, "/ /+ (+0+ .++'- &), Figure 1. Typical Forward Voltage Figure 3. Forward Power Dissipation THERMAL CHARACTERISTICS GI-+',"'--!+&%+,",-' '(+&%"3 3#%I 3#% * GI IE I )E@ -"& .-2 2% IE I )$ )(0+ )E@ >H E:6@ D; 6C :FJ>K6A:CI HFJ6G: EDL:G EJAH: -#% )E@ * +#% 4 * GI IE GIE GI5 L=:G: -#% I=: >C8G:6H: >C ?JC8I>DC I:BE:G6IJG: 67DK: I=: A:69 I:BE:G6IJG: GI CDGB6A>O:9 K6AJ: D; IG6CH>:CI I=:GB6A G:H>HI6C8: 6I I>B: I ;GDB ><JG: >: GI GI IE CDGB6A>O:9 K6AJ: D; IG6CH>:CI I=:GB6A G:H>HI6C8: 6I I>B: I IE )E@ I -"& BH Figure 4. Thermal Response http://onsemi.com 154 @ @ @ @ MBR150, MBR160 (-! %, -( !- ,"'$ *.% %' -! -# ; &!O )"-'E + #% -!+&%+,",-' #.'-"(' -( % 0 &1"&.& -2)"% % % %' -! "'!, /+ +/+, /(%- /(%-, Figure 5. Steady-State Thermal Resistance Figure 6. Typical Capacitance NOTE 3. -- MOUNTING DATA: Mounting Method 1 Data shown for thermal resistance junction-to-ambient (RJA) for the mounting shown is to be used as a typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. Typical Values for RJA in Still Air Lead Length, L (in) Mounting Method 1/8 1/4 1/2 3/4 1 52 65 72 85 C/W 2 67 80 87 100 C/W 3 -- RJA P.C. Board with 1-1/2 x 1-1/2 copper surface. % Mounting Method 2 C/W 50 % % Mounting Method 3 EE EEEEEEE EE EEEEEEE EE EE EEEEEEEE EEEEEEEE % P.C. Board with 1-1/2 x 1-1/2 copper surface. % (+ +(.' )%' /-(+ )"' &(.'-"' NOTE 4. -- THERMAL CIRCUIT MODEL: (For heat conduction through the leads) +, +% +# - +%$ + ) -% - -# -$ +,$ (Subscripts A and K refer to anode and cathode sides, respectively.) Values for thermal resistance components are: RL = 100C/W/in typically and 120C/W/in maximum. RJ = 36C/W typically and 46C/W maximum. -$ NOTE 5. -- HIGH FREQUENCY OPERATION: Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 6.) Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss: it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage. -%$ Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heat sink. Terms in the model signify: TA = Ambient Temperature TC = Case Temperature TL = Lead Temperature TJ = Junction Temperature RS = Thermal Resistance, Heat Sink to Ambient RL = Thermal Resistance, Lead to Heat Sink RJ = Thermal Resistance, Junction to Case PD = Power Dissipation http://onsemi.com 155 Preferred Device 9,$. ($' (&5,),(3 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes. * * * * * * * * http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 100 VOLTS Low Reverse Current Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Guard-Ring for Stress Protection Low Forward Voltage 150C Operating Junction Temperature High Surge Capacity Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 0.4 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead and Mounting Surface Temperature for Soldering Purposes: 220C Max. for 10 Seconds, 1/16 from case AXIAL LEAD CASE 59-04 PLASTIC * Shipped in plastic bags, 1000 per bag * Available Tape and Reeled, 5000 per reel, by adding a "RL'' suffix to the part number * Polarity: Cathode Indicated by Polarity Band * Marking: B1100 MARKING DIAGRAM MAXIMUM RATINGS Rating B1100 Symbol Max Unit VRRM VRWM VR 100 V Average Rectified Forward Current (VR(equiv) 0.2 VR(dc), RJA = 50C/W, P.C. Board Mounting, see Note 1., TA = 120C) IO 1.0 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Operating and Storage Junction Temperature Range Voltage Rate of Change (Rated VR) Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 1 B1100 = Device Code ORDERING INFORMATION Device 50 TJ, Tstg -65 to +150 dv/dt 10 A Package Shipping MBR1100 Axial Lead 1000 Units/Bag MBR1100RL Axial Lead 5000/Tape & Reel C Preferred devices are recommended choices for future use and best overall value. V/ns 156 Publication Order Number: MBR1100/D MBR1100 THERMAL CHARACTERISTICS (See Note 2.) Characteristic Symbol Max Unit RJA See Note 1. C/W Symbol Max Unit Thermal Resistance, Junction to Ambient ELECTRICAL CHARACTERISTICS (TL = 25C unless otherwise noted) Characteristic Maximum Instantaneous Forward Voltage * (iF = 1 A, TL = 25C) (iF = 1 A, TL = 100C) VF Maximum Instantaneous Reverse Current @ Rated dc Voltage * (TL = 25C) (TL = 100C) iR Volt 0.79 0.69 mA 0.5 5.0 -# "+ +/+,.++'- > "',-'-'(.,(+0+.++'-&), * Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. $ -# K "',-'-'(., /(%- /(%-, /+ +/+, /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current 98 ,*.+ 0/ )/ /+ )(0+",,")-"('0--, "/ /+ (+0+.++'-&), The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. ,*.+ 0/ 98 - &"'- -&)+-.+ "/ /+ (+0+ .++'- &), Figure 3. Current Derating (Mounting Method 3 per Note 1.) Figure 4. Power Dissipation http://onsemi.com 157 MBR1100 NOTE 2. -- THERMAL CIRCUIT MODEL: (For heat conduction through the leads) )"-'E +, +% +# - -# ;-,- &!O +%$ + +,$ -$ ) -% - -# -$ -%$ Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heat sink. Terms in the model signify: /+ +/+, /(%- /(%-, Figure 5. Typical Capacitance TA = Ambient Temperature TC = Case Temperature TL = Lead Temperature TJ = Junction Temperature RS = Thermal Resistance, Heat Sink to Ambient RL = Thermal Resistance, Lead to Heat Sink RJ = Thermal Resistance, Junction to Case PD = Power Dissipation NOTE 1. -- MOUNTING DATA: Data shown for thermal resistance junction-to-ambient (RJA) for the mounting shown is to be used as a typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. (Subscripts A and K refer to anode and cathode sides, respectively.) Values for thermal resistance components are: RL = 100C/W/in typically and 120C/W/in maximum. RJ = 36C/W typically and 46C/W maximum. Typical Values for RJA in Still Air Lead Length, L (in) Mounting Method 1/8 1/4 1/2 3/4 1 52 65 72 85 C/W NOTE 3. -- HIGH FREQUENCY OPERATION: 2 67 80 87 100 C/W 3 -- Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 5) Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss: it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage. Mounting Method 1 P.C. Board with 1-1/2 x 1-1/2 copper surface. E EEEEEEEE E EEEEEEEE E E EEEEEEEE EEEEEEEE % % Mounting Method 2 % % RJA C/W 50 Mounting Method 3 P.C. Board with 1-1/2 x 1-1/2 copper surface. % (+ +(.' )%' /-(+ )"' &(.'-"' http://onsemi.com 158 1N5820 and 1N5822 are Preferred Devices 9,$. ($' (&5,),(34 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes. http://onsemi.com * Extremely Low VF * Low Power Loss/High Efficiency * Low Stored Charge, Majority Carrier Conduction SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.1 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * * Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 220C Max. for 10 Seconds, 1/16 from case Shipped in plastic bags, 500 per bag Available Tape and Reeled, 1500 per reel, by adding a "RL'' suffix to the part number Polarity: Cathode indicated by Polarity Band Marking: 1N5820, 1N5821, 1N5822 AXIAL LEAD CASE 267-03 STYLE 1 MAXIMUM RATINGS Please See the Table on the Following Page MARKING DIAGRAM 1N582x 1N582x = Device Code x = 0, 1 or 2 ORDERING INFORMATION Device Package Shipping 1N5820 Axial Lead 500 Units/Bag 1N5820RL Axial Lead 1500/Tape & Reel 1N5821 Axial Lead 500 Units/Bag 1N5821RL Axial Lead 1500/Tape & Reel 1N5822 Axial Lead 500 Units/Bag 1N5822RL Axial Lead 1500/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 3 159 Publication Order Number: 1N5820/D 1N5820, 1N5821, 1N5822 MAXIMUM RATINGS Symbol 1N5820 1N5821 1N5822 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 20 30 40 V Non-Repetitive Peak Reverse Voltage VRSM 24 36 48 V VR(RMS) 14 21 28 V RMS Reverse Voltage Average Rectified Forward Current (Note 1.) VR(equiv) 0.2 VR(dc), TL = 95C (RJA = 28C/W, P.C. Board Mounting, see Note 5.) IO Ambient Temperature Rated VR(dc), PF(AV) = 0 RJA = 28C/W TA Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, half wave, single phase 60 Hz, TL = 75C) Operating and Storage Junction Temperature Range (Reverse Voltage applied) Peak Operating Junction Temperature (Forward Current applied) 3.0 90 85 A 80 C IFSM 80 (for one cycle) A TJ, Tstg 65 to +125 C TJ(pk) 150 C *THERMAL CHARACTERISTICS (Note 5.) Characteristic Thermal Resistance, Junction to Ambient Symbol Max Unit RJA 28 C/W Unit *ELECTRICAL CHARACTERISTICS (TL = 25C unless otherwise noted) (Note 1.) Symbol Characteristic Maximum Instantaneous Forward Voltage (Note 2.) (iF = 1.0 Amp) (iF = 3.0 Amp) (iF = 9.4 Amp) VF Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2.) TL = 25C TL = 100C iR 1N5820 1N5821 1N5822 0.370 0.475 0.850 0.380 0.500 0.900 0.390 0.525 0.950 V mA 2.0 20 1. Lead Temperature reference is cathode lead 1/32 from case. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. *Indicates JEDEC Registered Data for 1N5820-22. http://onsemi.com 160 2.0 20 2.0 20 1N5820, 1N5821, 1N5822 NOTE 3. -- DETERMINING MAXIMUM RATINGS use in common rectifier circuits, Table 1. indicates suggested factors for an equivalent dc voltage to use for conservative design, that is: VR(equiv) = V(FM) F (4) The factor F is derived by considering the properties of the various rectifier circuits and the reverse characteristics of Schottky diodes. Reverse power dissipation and the possibility of thermal runaway must be considered when operating this rectifier at reverse voltages above 0.1 VRWM. Proper derating may be accomplished by use of equation (1). TA(max) = TJ(max) RJAPF(AV) RJAPR(AV)(1) where TA(max) = Maximum allowable ambient temperature TJ(max) = Maximum allowable junction temperature (125C or the temperature at which thermal runaway occurs, whichever is lowest) PF(AV) = Average forward power dissipation PR(AV) = Average reverse power dissipation RJA = Junction-to-ambient thermal resistance EXAMPLE: Find TA(max) for 1N5821 operated in a 12-volt dc supply using a bridge circuit with capacitive filter such that IDC = 2.0 A (IF(AV) = 1.0 A), I(FM)/I(AV) = 10, Input Voltage = 10 V(rms), RJA = 40C/W. Step 1. Find VR(equiv). Read F = 0.65 from Table 1. , Figures 1, 2, and 3 permit easier use of equation (1) by taking reverse power dissipation and thermal runaway into consideration. The figures solve for a reference temperature as determined by equation (2). TR = TJ(max) RJAPR(AV) VR(equiv) = (1.41) (10) (0.65) = 9.2 V. Step 2. Find TR from Figure 2. Read TR = 108C @ VR = 9.2 V and RJA = 40C/W. Step 3. Find PF(AV) from Figure 6. **Read PF(AV) = 0.85 W (2) Substituting equation (2) into equation (1) yields: @ TA(max) = TR RJAPF(AV) (3) I (FM) 10 and I F(AV) 1.0 A. I (AV) Step 4. Find TA(max) from equation (3). TA(max) = 108 (0.85) (40) = 74C. Inspection of equations (2) and (3) reveals that TR is the ambient temperature at which thermal runaway occurs or where TJ = 125C, when forward power is zero. The transition from one boundary condition to the other is evident on the curves of Figures 1, 2, and 3 as a difference in the rate of change of the slope in the vicinity of 115C. The data of Figures 1, 2, and 3 is based upon dc conditions. For **Values given are for the 1N5821. Power is slightly lower for the 1N5820 because of its lower forward voltage, and higher for the 1N5822. Variations will be similar for the MBR-prefix devices, using PF(AV) from Figure 6. Table 1. Values for Factor F Circuit Half Wave Full Wave, Bridge Full Wave, Center Tapped* Load Resistive Capacitive* Resistive Capacitive Resistive Capacitive Sine Wave 0.5 1.3 0.5 0.65 1.0 1.3 Square Wave 0.75 1.5 0.75 0.75 1.5 1.5 *Note that VR(PK) 2.0 Vin(PK). Use line to center tap voltage for Vin. http://onsemi.com 161 1N5820, 1N5821, 1N5822 -+ ++'-&)+-.+ -+ ++'-&)+-.+ +# 0 + #% -!+&%+,",-' #.'-"(' -( % 0 -+ ++'-&)+-.+ +# 0 &1"&.& -2)"% (-! %, -( !- ,"'$ *.% %' -! GI-+',"'--!+&%+,",-' '(+&%"3 /+ +/+, /(%- /(%-, % % %' -! "'!, Figure 3. Maximum Reference Temperature 1N5822 Figure 4. Steady-State Thermal Resistance -=: I:BE:G6IJG: D; I=: A:69 H=DJA9 7: B:6HJG:9 JH>C< 6 I=:GU BD8DJEA: EA68:9 DC I=: A:69 6H 8ADH: 6H EDHH>7A: ID I=: I>: ED>CI -=: I=:GB6A B6HH 8DCC:8I:9 ID I=: I>: ED>CI >H CDGB6AAN A6G<: :CDJ<= HD I=6I >I L>AA CDI H><C>;>86CIAN G:HEDC9 ID =:6I HJG<:H <:C:G6I:9 >C I=: 9>D9: 6H 6 G:HJAI D; EJAH:9 DE:G6I>DC DC8: HI:69N HI6I: 8DC9>I>DCH 6G: 68=>:K:9 .H>C< I=: B:6HJG:9 K6AU J: D; -% I=: ?JC8I>DC I:BE:G6IJG: B6N 7: 9:I:GB>C:9 7N -# -% -#% % %' -! )E@ IE )E@ -"& I .-2 2% IE I )$ )(0+ )E@ >H E:6@ D; 6C :FJ>K6A:CI HFJ6G: EDL:G EJAH: -#% )E@ * +#% 4 * GI IE GIE GI5 L=:G: -#% I=: >C8G:6H: >C ?JC8I>DC I:BE:G6IJG: 67DK: I=: A:69 I:BE:G6IJG: GI CDGB6A>O:9 K6AJ: D; IG6CH>:CI I=:GB6A G:H>HI6C8: 6I I>B: I >: GI IE CDGB6A>O:9 K6AJ: D; IG6CH>:CI I=:GB6A G:H>HI6C8: 6I I>B: I IE :I8 +# 0 Figure 2. Maximum Reference Temperature 1N5821 Figure 1. Maximum Reference Temperature 1N5820 /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, I -"& BH Figure 5. Thermal Response http://onsemi.com 162 @ @ @ @ @ )/ /+ )(0+",,")-"('0--, 1N5820, 1N5821, 1N5822 NOTE 4. - APPROXIMATE THERMAL CIRCUIT MODEL ,"' 0/ " & R+:H>HI>K:R%D69 " / 6E68>I>K: %D69H +, "/ /+ (+0+ .++'- &) Figure 6. Forward Power Dissipation 1N5820-22 - -# Mounting Method 1 P.C. Board where available copper surface is small. NOTE 5. -- MOUNTING DATA Data shown for thermal resistance junction-to-ambient (RJA) for the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR RJA IN STILL AIR -$ -%$ 1/8 1/4 1/2 3/4 RJA 1 50 51 53 55 C/W 2 58 59 61 63 C/W 28 EEEEEEE EE EEEEEEE E E E EEEEEEEE EEEEEEEE % % Mounting Method 3 P.C. Board with 2-1/2 x 2-1/2 copper surface. % Mounting Method 2 Lead Length, L (in) Mounting Method 3 -$ Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heat sink. Terms in the model signify: TA = Ambient Temperature TC = Case Temperature TL = Lead Temperature TJ = Junction Temperature RS = Thermal Resistance, Heat Sink to Ambient RL = Thermal Resistance, Lead to Heat Sink RJ = Thermal Resistance, Junction to Case PD = Total Power Dissipation = PF + PR PF = Forward Power Dissipation PR = Reverse Power Dissipation (Subscripts (A) and (K) refer to anode and cathode sides, respectively.) Values for thermal resistance components are: RL = 42C/W/in typically and 48C/W/in maximum RJ = 10C/W typically and 16C/W maximum The maximum lead temperature may be found as follows: TL = TJ(max) TJL where TJL RJL * PD -# +,$ ,*.+ 0/ +%$ + ) -% +# - 98 +% % % /-(+ ).,! "' -+&"'%, - C/W http://onsemi.com 163 (+ +(.' )%' 1N5820, 1N5821, 1N5822 ",& )$!% 0/.++'-&) -# -% ; !O 2% ,.+ ))%" - +- %( ('"-"(', Figure 8. Maximum Non-Repetitive Surge Current -# '.&+ ( 2%, "+ +/+,.++'-B > "',-'-'(.,(+0+.++'-&) K "',-'-'(., (+0+ /(%- /(%-, ' ' ' Figure 7. Typical Forward Voltage /+ +/+, /(%- /(%-, )"-'E Figure 9. Typical Reverse Current ' NOTE 6. -- HIGH FREQUENCY OPERATION ' -# ; &!O Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 10.) ' /+ +/+, /(%- /(%-, Figure 10. Typical Capacitance http://onsemi.com 164 Preferred Device 9,$. ($' (&5,),(3 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes. * * * * http://onsemi.com SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 40 VOLTS Extremely Low VF Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Low Stored Charge, Majority Carrier Conduction Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.1 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead and Mounting Surface Temperature for Soldering Purposes: * * * * 220C Max. for 10 Seconds, 1/16 from case Shipped in plastic bags, 500 per bag Available Tape and Reeled, 1500 per reel, by adding a "RL'' suffix to the part number Polarity: Cathode indicated by Polarity Band Marking: B340 AXIAL LEAD CASE 267-03 STYLE 1 MAXIMUM RATINGS Rating Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 40 V Average Rectified Forward Current TA = 65C (RJA = 28C/W, P.C. Board Mounting) IO 3.0 B340 A B340 Non-Repetitive Peak Surge Current (Note 1.) (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz, TL = 75C) IFSM Operating and Storage Junction Temperature Range (Reverse Voltage Applied) TJ, Tstg -65 to +150 C TJ(pk) 150 C Peak Operating Junction Temperature (Forward Current Applied) MARKING DIAGRAM 80 = Device Code A ORDERING INFORMATION Device Package Shipping MBR340 Axial Lead 500 Units/Bag MBR340P Axial Lead 500 Units/Bag MBR340PRL Axial Lead 1500/Tape & Reel MBR340RL Axial Lead 1500/Tape & Reel 1. Lead Temperature reference is cathode lead 1/32 from case. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 1 165 Publication Order Number: MBR340/D MBR340 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (see Note 3., Mounting Method 3) Symbol Max Unit RJA 28 C/W Symbol Max Unit ELECTRICAL CHARACTERISTICS (TL = 25C unless otherwise noted) (Note 1.) Characteristic Maximum Instantaneous Forward Voltage (Note 2.) (iF = 1.0 Amp) (iF = 3.0 Amp) (iF = 9.4 Amp) vF Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2.) TL = 25C TL = 100C iR V 0.500 0.600 0.850 mA 0.60 20 1. Lead Temperature reference is cathode lead 1/32 from case. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. "+/+,.++'-B + >"',-'-'(.,(+0+.++'-&), -# /+ +/+, /(%- /(%-, Figure 2. Typical Reverse Current* *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. "/+ (+0+.++'-&), / K "',-'-'(., /(%- /(%-, ,*.+ 0/ Figure 1. Typical Forward Voltage 98 - &"'- -&)+-.+ Figure 3. Current Derating (Mounting Method #3 per Note 3.) http://onsemi.com 166 MBR340 ,*.+ 0/ +,",-"/ %( " )$ )"-"/ %( " / 98 " )$ " / -# -# )"-'E )/+ )(0+",,")-"('0--, / " / /+ (+0+ .++'- &), Figure 4. Power Dissipation /+ +/+, /(%- /(%-, Figure 5. Typical Capacitance NOTE 3. -- MOUNTING DATA Data shown for thermal resistance junction-to-ambient (RJA) for the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR RJA IN STILL AIR Mounting Method Lead Length, L (in) 1/8 1/4 1/2 3/4 RJA 1 50 51 53 55 C/W 2 58 59 61 63 C/W 3 C/W 28 Mounting Method 1 Mounting Method 2 P.C. Board where available copper surface is small. Vector Push-In Terminals T-28 L EEEEEEEEEEEEE EEEEEEEEEEEEE L EEEEEEEEEEE EEEEEEEEEEE L Mounting Method 3 EE EE EE EE EE EE EE P.C. Board with 2-1/2 X 2-1/2 copper surface. L = 1/2'' Board Ground Plane http://onsemi.com 167 L MBR360 is a Preferred Device 9,$. ($' (&5,),(34 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes. * Extremely Low vF * Low Power Loss/High Efficiency * Highly Stable Oxide Passivated Junction * Low Stored Charge, Majority Carrier Conduction http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 50, 60 VOLTS Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.1 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * * Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 220C Max. for 10 Seconds, 1/16 from case Shipped in plastic bags, 500 per bag Available Tape and Reeled, 1500 per reel, by adding a "RL'' suffix to the part number Polarity: Cathode indicated by Polarity Band Marking: B350, B360 AXIAL LEAD CASE 267-03 STYLE 1 MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBR350 MBR360 VRRM VRWM VR Average Rectified Forward Current TA = 65C (RJA = 28C/W, P.C. Board Mounting) Max Unit 50 60 B3x0 IO 3.0 A Non-Repetitive Peak Surge Current (Note 1.) (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz, TL = 75C) IFSM 80 A Operating and Storage Junction Temperature Range (Reverse Voltage Applied) TJ, Tstg Peak Operating Junction Temperature (Forward Current Applied) MARKING DIAGRAM V B3x0 x = Device Code = 5 or 6 ORDERING INFORMATION Device TJ(pk) C -65 to +150 C 150 Package Shipping MBR350 Axial Lead 500 Units/Bag MBR350RL Axial Lead 1500/Tape & Reel MBR360 Axial Lead 500 Units/Bag MBR360RL Axial Lead 1500/Tape & Reel 1. Lead Temperature reference is cathode lead 1/32 from case. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 1 168 Publication Order Number: MBR350/D MBR350, MBR360 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (see Note 3., Mounting Method 3) Symbol Max Unit RJA 28 C/W Symbol Max Unit ELECTRICAL CHARACTERISTICS (TL = 25C unless otherwise noted) (Note 1.) Characteristic Maximum Instantaneous Forward Voltage (Note 2.) (iF = 1.0 Amp) (iF = 3.0 Amp) (iF = 9.4 Amp) vF Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2.) TL = 25C TL = 100C iR V 0.600 0.740 1.080 mA 0.60 20 1. Lead Temperature reference is cathode lead 1/32 from case. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. "+/+,.++'-B + -# -=: 8JGK:H H=DLC 6G: INE>86A ;DG I=: =><=:HI KDAI6<: 9:K>8: >C I=: KDAI6<: <GDJE>C< -NE>86A G:K:GH: 8JGG:CI ;DG ADL:G KDAI6<: H:A:8I>DCH 86C 7: :HI>B6I:9 ;GDB I=:H: H6B: 8JGK:H >; /+ >H HJ;;>8>:CIAN 7:ADL G6I:9 /+ /+ +/+, /(%- /(%-, Figure 2. Typical Reverse Current* "/+ (+0+.++'-&), / >"',-'-'(.,(+0+.++'-&), -# K "',-'-'(., /(%- /(%-, +- /+ +# 0 98 ,*.+ 0/ -# - &"'- -&)+-.+ Figure 3. Current Derating Ambient (Mounting Method #3 per Note 3.) Figure 1. Typical Forward Voltage http://onsemi.com 169 -# )"-'E )/+ )(0+",,")-"('0--, / MBR350, MBR360 ,*.+ 0/ 98 -# " / /+ (+0+ .++'- &), Figure 4. Power Dissipation /+ +/+, /(%- /(%-, Figure 5. Typical Capacitance NOTE 3. -- MOUNTING DATA Data shown for thermal resistance junction-to-ambient (RJA) for the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR RJA IN STILL AIR Mounting Method Lead Length, L (in) 1/8 1/4 1/2 3/4 RJA 1 50 51 53 55 C/W 2 58 59 61 63 C/W 3 C/W 28 Mounting Method 1 Mounting Method 2 P.C. Board where available copper surface is small. Vector Push-In Terminals T-28 L EEEEEEEEEEEEE EEEEEEEEEEEEE L EEEEEEEEEEE EEEEEEEEEEE L Mounting Method 3 EE EE EE EE EE EE EE P.C. Board with 2-1/2 X 2-1/2 copper surface. L = 1/2'' Board Ground Plane http://onsemi.com 170 L Preferred Device 9,$. ($' (&5,),(3 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes. * Low Reverse Current * Low Stored Charge, Majority Carrier Conduction * Low Power Loss/High Efficiency * Highly Stable Oxide Passivated Junction * Guard-Ring for Stress Protection * Low Forward Voltage * 150C Operating Junction Temperature * High Surge Capacity http://onsemi.com SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 100 VOLTS Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.1 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead and Mounting Surface Temperature for Soldering Purposes: 220C Max. for 10 Seconds, 1/16 from case * Shipped in plastic bags, 500 per bag * Available Tape and Reeled, 1500 per reel, by adding a "RL'' suffix to AXIAL LEAD CASE 267-03 STYLE 1 the part number * Polarity: Cathode indicated by Polarity Band * Marking: B3100 MARKING DIAGRAM B3100 MAXIMUM RATINGS Rating Symbol Max Unit VRRM VRWM VR 100 V Average Rectified Forward Current TA = 100C (RJA = 28C/W, P.C. Board Mounting, see Note 2.) IO 3.0 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage B3100 = Device Code ORDERING INFORMATION Device Operating and Storage Junction Temperature Range (Reverse Voltage Applied) Voltage Rate of Change (Rated VR) Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 1 TJ, Tstg 150 Package Shipping MBR3100 Axial Lead 500 Units/Bag MBR3100RL Axial Lead 1500/Tape & Reel A C -65 to +150 Preferred devices are recommended choices for future use and best overall value. dv/dt 10 V/ns 171 Publication Order Number: MBR3100/D MBR3100 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (see Note 2., Mounting Method 3) Symbol Max Unit RJA 28 C/W Symbol Max Unit ELECTRICAL CHARACTERISTICS (TL = 25C unless otherwise noted) Characteristic Maximum Instantaneous Forward Voltage (Note 1.) (iF = 3.0 Amps, TL = 25C) (iF = 3.0 Amps, TL = 100C) vF Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 1.) TL = 25C TL = 100C iR V 0.79 0.69 mA 0.6 20 "+/+,.++'-B + >"',-'-'(.,(+0+.++'-&), 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. -# -# K "',-'-'(., /(%- /(%-, /+ +/+, /(%- /(%-, Figure 2. Typical Reverse Current* Figure 1. Typical Forward Voltage 98 ,*.+ 0/ )/+ )(0+",,")-"('0--, / "/+ (+0+.++'-&), / *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these curves if VR is sufficient below rated VR. ,*.+ 0/ - &"'- -&)+-.+ Figure 3. Current Derating (Mounting Method #3 per Note 2.) " / /+ (+0+ .++'- &), Figure 4. Power Dissipation http://onsemi.com 172 98 MBR3100 )"-'E -# ; &!O /+ +/+, /(%- /(%-, Figure 5. Typical Capacitance NOTE 2. -- MOUNTING DATA Data shown for thermal resistance junction-to-ambient (RJA) for the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR RJA IN STILL AIR Lead Length, L (in) Mounting Method 1/8 1/4 1/2 3/4 RJA 1 50 51 53 55 C/W 2 58 59 61 63 C/W 3 C/W 28 Mounting Method 1 Mounting Method 2 P.C. Board where available copper surface is small. Vector Push-In Terminals T-28 L EEEEEEEEEEEEE EEEEEEEEEEEEE L EEEEEEEEEEE EEEEEEEEEEE L Mounting Method 3 EE EE EE EE EE EE EE P.C. Board with 2-1/2 X 2-1/2 copper surface. L = 1/2'' Board Ground Plane http://onsemi.com 173 L MBR1545CT is a Preferred Device " 18(3 (&5,),(3 . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: * * * * * Center-Tap Configuration Guardring for Stress Protection Low Forward Voltage 150C Operating Junction Temperature Epoxy Meets UL94, VO at 1/8 http://onsemi.com Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * SCHOTTKY BARRIER RECTIFIERS 15 AMPERES 35 and 45 VOLTS Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: B1535, B1545 4 MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Volta MBR1535CT MBR1545CT VRRM VRWM VR Average Rectified Forward Current (Rated VR, TC = 105C) Per Diode Per Device IF(AV) Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 105C) Per Diode IFRM 15 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM Storage Temperature Range Tstg -65 to +175 C Operating Junction Temperature TJ -65 to +150 C dv/dt 1000 V/s Voltage Rate of Change (Rated VR) Value Unit V 1 35 45 2 3 TO-220AB CASE 221A PLASTIC A 7.5 15 MARKING DIAGRAM B15x5 1.0 A B15x5 = Device Code x = 3 or 4 ORDERING INFORMATION Device Package Shipping MBR1535CT TO-220 50 Units/Rail MBR1545CT TO-220 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 174 Publication Order Number: MBR1535CT/D MBR1535CT, MBR1545CT THERMAL CHARACTERISTICS PER DIODE Characteristic Symbol Value Unit Maximum Thermal Resistance, Junction to Case RJC 3.0 C/W Maximum Thermal Resistance, Junction to Ambient RJA 60 C/W ELECTRICAL CHARACTERISTICS PER DIODE Maximum Instantaneous Forward Voltage (Note 1.) (iF = 7.5 Amps, TC = 125C) (iF = 15 Amps, TC = 125C) (iF = 15 Amps, TC = 25C) VF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 125C) (Rated dc Voltage, TC = 25C) iR Volts 0.57 0.72 0.84 mA 15 0.1 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% http://onsemi.com 175 "+/+,.++'-B + -# Figure 7. Typical Reverse Current "/+ (+0+.++'-&), / +# 0 98 ,*.+ 0/ Figure 6. Typical Forward Voltage /+ +/+, /(%- /(%-, +- /(%- ))%" -# > "',-'-'(., (+0+ /(%- /(%-, - , -&)+-.+ +- /(%- ))%" 98 +# 0 +# 0 '( !- ,"'$ ,*.+ 0/ 98 " )$ " / 98 ,*.+ 0/ Figure 9. Current Derating, Ambient +,",-"/ %( - &"'- -&)+-.+ Figure 8. Current Derating, Case )/+ (+0+)(0+",,")-"('0--, / "/+ (+0+.++'-&), / >"',-'-'(.,(+0+.++'-&), MBR1535CT, MBR1545CT "/ /+ (+0+ .++'- &), Figure 10. Power Dissipation http://onsemi.com 176 " 18(3 (&5,),(3 . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: * * * * * * * * 16 Amps Total (8.0 Amps Per Diode Leg) Guard-Ring for Stress Protection Low Forward Voltage 175C Operating Junction Temperature Epoxy Meets UL94, VO at 1/8 Low Power Loss/High Efficiency High Surge Capacity Low Stored Charge Majority Carrier Conduction http://onsemi.com SCHOTTKY BARRIER RECTIFIER 16 AMPERES 100 VOLTS 1 Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal 3 Leads are Readily Solderable 4 * Lead Temperature for Soldering Purposes: * * 260C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: B16100 TO-220AB CASE 221A PLASTIC MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current (Rated VR) TC = 133C IF(AV) 8.0 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 133C IFRM 16 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 0.5 A Operating Junction Temperature TJ 65 to +175 C Storage Temperature Tstg 65 to +175 C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s 1 2 MARKING DIAGRAM YYWW B16100 AKA YY = Year WW = Work Week B16100 = Device Code AKA = Polarity Designator ORDERING INFORMATION Device MBR16100CT Semiconductor Components Industries, LLC, 2000 November, 2000 - Rev. 0 3 177 Package Shipping TO-220 50 Units/Rail Publication Order Number: MBR16100CT/D MBR16100CT THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RJC RJA 2.0 60 C/W Maximum Thermal Resistance - Junction to Case - Junction to Ambient ELECTRICAL CHARACTERISTICS (Per Diode Leg) Maximum Instantaneous Forward Voltage (Note 1.) (iF = 8.0 Amps, TC = 125C) (iF = 8.0 Amps, TC = 25C) (iF = 16 Amps, TC = 125C) (iF = 16 Amps, TC = 25C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 125C) (Rated dc Voltage, TC = 25C) iR Volts 0.6 0.74 0.69 0.84 mA 5.0 0.1 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. 100 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD VOLTAGE (AMPS) 100 10 125C 75C 1 175C TJ = 25C 0.1 10 125C 75C 1 175C TJ = 25C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Per Diode Figure 2. Maximum Forward Voltage Per Diode http://onsemi.com 178 1 MBR16100CT 1400 175C 1200 0.01 C, CAPACITANCE (pF) IR, REVERSE CURRENT (AMPS) 0.1 125C 0.001 0.0001 75C 0.00001 0.000001 1000 800 600 400 200 TJ = 25C 0.0000001 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Per Diode Figure 4. Typical Capacitance Per Diode 14 dc 12 SQUARE WAVE 10 8 6 4 2 0 140 145 150 155 160 165 170 175 180 PD, AVERAGE POWER DISSIPATION (WATTS) IF(AV), AVERAGE FORWARD CURRENT (AMPS) 0 8 SQUARE WAVE 7 6 dc 5 4 3 2 1 0 -1 0 2 4 6 8 10 12 TC, CASE TEMPERATURE (C) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating (Per Diode), Case Figure 6. Average Power Dissipation http://onsemi.com 179 14 Preferred Device " 6$. &+155-: 18(3 (&5,),(3 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low-voltage, high-frequency switching power supplies, free wheeling diodes and polarity protection diodes. * * * * * * * * * Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop (0.4 Max @ 10 A, TC = 150C) 150C Operating Junction Temperature Matched Dual Die Construction (10 A per Leg or 20 A per Package) High Junction Temperature Capability High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection Epoxy Meets UL94, VO at 1/8 http://onsemi.com SCHOTTKY BARRIER RECTIFIER 20 AMPERES 30 VOLTS 4 Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: B2030 1 2 3 TO-220AB CASE 221A PLASTIC MAXIMUM RATINGS MARKING DIAGRAM Please See the Table on the Following Page B2030 B2030 = Device Code ORDERING INFORMATION Device Package Shipping MBR2030CTL TO-220 50 Units/Tube Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 1 180 Publication Order Number: MBR2030CTL/D MBR2030CTL MAXIMUM RATINGS (Per Leg) Rating Symbol Val e Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 30 Volts Average Rectified Forward Current IF(AV) 10 Amps Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 Amps Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 1.0 Amp Operating Junction Temperature TJ 65 to +150 C Storage Temperature Tstg 65 to +175 C Voltage Rate of Change (Rated VR) dv/dt 1000 V/s RJC 2.0 C/W THERMAL CHARACTERISTICS (Per Leg) Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (Per Leg) Maximum Instantaneous Forward Voltage (Note 1.) (iF = 10 Amps, TC = 25C) (iF = 10 Amps, TC = 150C) (iF = 20 Amps, TC = 25C) (iF = 20 Amps, TC = 150C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated DC Voltage, TC = 25C) (Rated DC Voltage, TC = 100C) (Rated DC Voltage, TC = 125C) iR Volts 0.52 0.40 0.58 0.48 mA 5.0 40 75 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. http://onsemi.com 181 "+/+,.++'-B + MBR2030CTL >"',-'-'(.,(+0+.++'-&), -# -# -# -# Figure 2. Typical Reverse Current (Per Leg) "(+0+.++'-&), / K "',-'-'(., /(%- /(%-, +- /(%- ))%" +# 0 98 ,*.+ 0/ 98 98 Figure 3. Current Derating, Case +- /(%- ))%" +# 0 +# 0 ' !-,"'$ ,*.+ 0/ - , -&)+-.+ "/+ (+0+)(0+",,")-"('0--, / Figure 1. Typical Forward Voltage (Per Leg) "/+ (+0+.++'-&), / /+ +/+, /(%- /(%-, - &"'- -&)+-.+ -# ,"' 0/ " )$ " / ,*.+ 0/ 98 Figure 4. Current Derating, Ambient "/ /+ (+0+ .++'- &), Figure 5. Forward Power Dissipation http://onsemi.com 182 MBR2030CTL $ HIGH FREQUENCY OPERATION Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 6.) Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2.0 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss; it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage. -# ; &!O )"-'E /+ +/+, /(%- /(%-, Figure 6. Typical Capacitance / B98 @ / / /98 .- ' H @!O .++'&)%"-. #., &), +(' ' +(' ' Figure 7. Test Circuit for dv/dt and Reverse Surge Current http://onsemi.com 183 Preferred Device " 18(3 (&5,),(3 . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: * * * * Guardring for Stress Protection Low Forward Voltage 150C Operating Junction Temperature Epoxy Meets UL94, VO at 1/8 http://onsemi.com Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: B2045 4 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR, TC = 135C) IF(AV) 20 A Peak Repetitive Forward Current per Diode Leg (Rated VR, Square Wave, 20 kHz, TC = 135C) IFRM 20 Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) See Figure 11 IRRM Storage Temperature Range Tstg -65 to +175 C Operating Junction Temperature TJ -65 to +150 C dv/dt 1000 V/s Voltage Rate of Change (Rated VR) 1 A 150 2 3 TO-220AB CASE 221A PLASTIC A MARKING DIAGRAM 1.0 A B2045 B2045 = Device Code ORDERING INFORMATION Device MBR2045CT Package Shipping TO-220 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 0 184 Publication Order Number: MBR2045CT/D MBR2045CT THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance, Junction to Case Symbol Max Unit RJC 2.0 C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1.) (iF = 10 Amps, TC = 125C) (iF = 20 Amps, TC = 125C) (iF = 20 Amps, TC = 25C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 125C) (Rated dc Voltage, TC = 25C) iR Volts 0.57 0.72 0.84 mA 15 0.1 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. http://onsemi.com 185 MBR2045CT -# Figure 2. Typical Forward Voltage ",& )$!% 0/.++'-&), Figure 1. Maximum Forward Voltage -# K "',-'-'(., /(%- /(%-, K "',-'-'(., /(%- /(%-, "+ +/+,.++'-B >"',-'-'(.,(+0+.++'-&), >"',-'-'(.,(+0+.++'-&), -# /+ +/+, /(%- /(%-, '.&+ ( 2%, - !O Figure 3. Maximum Reverse Current Figure 4. Maximum Surge Capability http://onsemi.com 186 +- /(%- ))%" " " )$ R+,",-"/R%( / " )"-"/R%( )$ " / ,*.+ 0/ 98 98 ,*.+ 0/ " )"-"/R%( )$ " / -# " )$ R+,",-"/R%( / ,*.+ 0/ 98 " )"-"/R%( )$ " / Figure 6. Current Derating, RJA = 16C/W ,"' 0/ +,",-"/ %( " Figure 5. Current Derating, Infinite Heatsink +- /(%- ))%" - &"'- -&)+-.+ - , -&)+-.+ "/ /+ (+0+.++'-&), "/ /+ (+0+.++'-&), GI-+',"'--!+&%+,",-' '(+&%"3 )/ /+ (+0+)(0+",,")-"('0--, "/ /+ (+0+.++'-&), MBR2045CT +- /(%- ))%" +# 0 " " )$ R+,",-"/R%( / ,*.+ 0/ 98 " )"-"/R%( )$ " / "/ /+ (+0+ .++'- &), - &"'- -&)+-.+ Figure 7. Forward Power Dissipation Figure 8. Current Derating, Free Air I )E@ -"& .-2 2% IE I )$ )(0+ )E@ >H E:6@ D; 6C :FJ>K6A:CI HFJ6G: EDL:G EJAH: -#% )E@ * +#% 4 * GI IE GIE GI5 L=:G: -#% I=: >C8G:6H: >C ?JC8I>DC I:BE:G6IJG: 67DK: I=: A:69 I:BE:G6IJG: GI CDGB6A>O:9 K6AJ: D; IG6CH>:CI I=:GB6A G:H>HI6C8: 6I I>B: I >: GI IE CDGB6A>O:9 K6AJ: D; IG6CH>:CI I=:GB6A G:H>HI6C8: 6I I>B: I IE :I8 )E@ IE I -"& BH Figure 9. Thermal Response http://onsemi.com 187 MBR2045CT HIGH FREQUENCY OPERATION Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 10.) Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2.0 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss; it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage. )"-'E &1"&.& -2)"% Figure 10. Capacitance @ / /98 .- /+ +/+, /(%- /(%-, / B98 / ' H @!O .++'&)%"-. #., &), +(' ' +(' ' Figure 11. Test Circuit for dv/dt and Reverse Surge Current http://onsemi.com 188 MBR2060CT and MBR20100CT are Preferred Devices " 18(3 (&5,),(34 . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: * * * * * * * * 20 Amps Total (10 Amps Per Diode Leg) Guard-Ring for Stress Protection Low Forward Voltage 150C Operating Junction Temperature Epoxy Meets UL94, VO at 1/8 Low Power Loss/High Efficiency High Surge Capacity Low Stored Charge Majority Carrier Conduction http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 60-100 VOLTS Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal 4 Leads are Readily Solderable TO-220AB CASE 221A PLASTIC * Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds * Shipped 50 units per plastic tube * Marking: B2060, B2080, B2090, B20100 1 2 3 MARKING DIAGRAM MAXIMUM RATINGS Please See the Table on the Following Page YY WW B20x0 AKA YY WW B20x0 x AKA = Year = Work Week = Device Code = 6, 8, 9 or 10 = Polarity Designator ORDERING INFORMATION Device Package Shipping MBR2060CT TO-220 50 Units/Rail MBR2080CT TO-220 50 Units/Rail MBR2090CT TO-220 50 Units/Rail MBR20100CT TO-220 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 4 189 Publication Order Number: MBR2060CT/D MBR2060CT, MBR2080CT, MBR2090CT, MBR20100CT MAXIMUM RATINGS (Per Diode Leg) MBR Symbol 2060CT 2080CT 2090CT 20100CT Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 60 80 90 100 Volts Average Rectified Forward Current (Rated VR) TC = 133C IF(AV) 10 Amps Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 133C IFRM 20 Amps Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 Amps Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 0.5 Amp Operating Junction Temperature TJ 65 to +150 C Storage Temperature Tstg 65 to +175 C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s RJC RJA 2.0 60 C/W Rating THERMAL CHARACTERISTICS Maximum Thermal Resistance -- Junction to Case -- Junction to Ambient ELECTRICAL CHARACTERISTICS (Per Diode Leg) Maximum Instantaneous Forward Voltage (Note 1.) (iF = 10 Amps, TC = 125C) (iF = 10 Amps, TC = 25C) (iF = 20 Amps, TC = 125C) (iF = 20 Amps, TC = 25C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 125C) (Rated dc Voltage, TC = 25C) iR Volts 0.75 0.85 0.85 0.95 mA 6.0 0.1 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. http://onsemi.com 190 -# "+ +/+,.++'-B -# K "',-'-'(., /(%- /(%-, /+ +/+, /(%- /(%-, Figure 1. Typical Forward Voltage Per Diode Figure 2. Typical Reverse Current Per Diode +- /(%- ))%" +# 0 98 ,*.+ 0/ " / /+ (+0+.++'-&), !-,"'$ +# 0 '( !-,"'$ +# 0 +- /(%- ))%" 98 98 ,*.+ 0/ - &"'- -&)+-.+ Figure 3. Current Derating, Case Figure 4. Current Derating, Ambient ")$ "/ - ")$ "/ ")$ "/ 98 ")$ "/ ,*.+ 0/ /+ .++'- &), Figure 5. Average Power Dissipation and Average Current http://onsemi.com 191 - , -&)+-.+ /+ )(0+0--, "/ /+ (+0+.++'-&), > "',-'-'(.,(+0+.++'-&), MBR2060CT, MBR2080CT, MBR2090CT, MBR20100CT " 18(3 Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state-of-the-art device is designed for use in high frequency switching power supplies and converters with up to 48 volt outputs. They block up to 200 volts and offer improved Schottky performance at frequencies from 250 kHz to 5.0 MHz. * 200 Volt Blocking Voltage * Low Forward Voltage Drop * Guardring for Stress Protection and High dv/dt Capability * (10,000 V/s) Dual Diode Construction -- Terminals 1 and 3 Must be Connected for Parallel Operation at Full Rating http://onsemi.com SCHOTTKY BARRIER RECTIFIER 20 AMPERES 200 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 4 * Lead Temperature for Soldering Purposes: * * 260C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: B20200 MAXIMUM RATINGS (Per Leg) Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 200 V Average Rectified Forward Current (Rated VR, TC = 125C) Per Leg Per Package IF(AV) Peak Repetitive Forward Current per Leg (Rated VR, Square Wave, 20 kHz, TC = 90C) IFRM 20 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg -65 to +175 C Operating Junction Temperature TJ -65 to +150 C dv/dt 10,000 V/s Voltage Rate of Change (Rated VR) 1 A 10 20 MARKING DIAGRAM B20200 B20200 = Device Code ORDERING INFORMATION MBR20200CT October, 2000 - Rev. 2 3 TO-220AB CASE 221A PLASTIC Device Semiconductor Components Industries, LLC, 2000 2 192 Package Shipping TO-220 50 Units/Rail Publication Order Number: MBR20200CT/D MBR20200CT THERMAL CHARACTERISTICS (Per Leg) Characteristic Symbol Value Unit RJC 2.0 C/W Maximum Instantaneous Forward Voltage (Note 1.) (IF = 10 Amps, TC = 25C) (IF = 10 Amps, TC = 125C) (IF = 20 Amps, TC = 25C) (IF = 20 Amps, TC = 125C) VF 0.9 0.8 1.0 0.9 Volts Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 25C) (Rated dc Voltage, TC = 125C) IR 1.0 50 mA CT 500 pF Thermal Resistance -- Junction to Case ELECTRICAL CHARACTERISTICS (Per Leg) DYNAMIC CHARACTERISTICS (Per Leg) Capacitance (VR = -5.0 V, TC = 25C, Frequency = 1.0 MHz) 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. -# -# -# -# -# "+/+,.++'- + ""',-'(.,(+0+.++'-&) -# -# -# K "',-'-'(., /(%- /(%-, /+ +/+, .++'- /(%-, Figure 1. Typical Forward Voltage (Per Leg) Figure 2. Typical Reverse Current (Per Leg) http://onsemi.com 193 -# ,*.+ 0/ 98 ")$ "/ "/+ (+0+.++'-&), / +- /(%- +# 0 98 ,*.+ 0/ - , -&)+-.+ Figure 3. Forward Power Dissipation Figure 4. Current Derating, Case 98 ,*.+ 0/ -# +# 0 +- /(%- "/ /+ (+0+ .++'- &), )"-'E "/+ (+0+.++'-&), / )/+ )(0+",,")-"('0--, / MBR20200CT - &"'- -&)+-.+ /+ +/+, /(%- /(%-, Figure 5. Current Derating, Ambient Figure 6. Typical Capacitance (Per Leg) http://onsemi.com 194 " 18(3 (&5,),(3 . . . employing the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. * Very Low Forward Voltage (0.55 V Maximum @ 25 Amps) * Matched Dual Die Construction (12.5 A per Leg or 25 A per Package) * Guardring for Stress Protection * Highly Stable Oxide Passivated Junction * http://onsemi.com SCHOTTKY BARRIER RECTIFIER 25 AMPERES 35 VOLTS (125C Operating Junction Temperature) Epoxy Meets UL94, VO at 1/8 Mechanical Characteristics * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * 4 Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: B2535L 1 MAXIMUM RATINGS (Per Leg) 2 3 Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 35 V Average Rectified Forward Current (Rated VR, TC = 110C) IF(AV) 12.5 A Peak Repetitive Forward Current, per Leg (Rated VR, Square Wave, 20 kHz, TC = 95C) IFRM 25 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) IFSM 150 A B2535L Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 1.0 A B2535L = Device Code Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ -65 to +125 C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s Controlled Avalanche Energy Waval 20 mJ Rating Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 195 TO-220AB CASE 221A PLASTIC MARKING DIAGRAM ORDERING INFORMATION Device MBR2535CTL Package Shipping TO-220 50 Units/Rail Publication Order Number: MBR2535CTL/D MBR2535CTL THERMAL CHARACTERISTICS Characteristic Thermal Resistance -- Junction to Case Symbol Max Unit RJC 2.0 C/W ELECTRICAL CHARACTERISTICS (Per Leg) Maximum Instantaneous Forward Voltage (Note 1.) (IF = 25 Amps, TJ = 25C) (IF = 12.5 Amps, TJ = 25C) (IF = 12.5 Amps, TJ = 125C) VF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 125C) IR Volts 0.55 0.47 0.41 mA 5.0 500 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. ""',-'(.,(+0+.++'-&) -# -# K "',-'-'(., /(%- /(%-, Figure 1. Typical Forward Voltage, Per Leg http://onsemi.com 196 -# "+/+,.++'-B + -# -# /+ +/+, /(%- /(%-, )/+ (+0+)(0+",,")-"('0--, / MBR2535CTL -# ,*.+ 0/ ,"' 0/ +,",-"/ %( 98 "/+ (+0+.++'-&), / "/+ (+0+.++'-&), / 98 ,*.+ - , -&)+-.+ Figure 3. Forward Power Dissipation, Per Leg +- /G ))%" +# 0 "/ /+ (+0+ .++'- &), Figure 2. Typical Reverse Current, Per Leg +# 0 98 ,*.+ 0/ - &"'- -&)+-.+ Figure 5. Current Derating Ambient, Per Leg Figure 4. Current Derating http://onsemi.com 197 MBR2545CT is a Preferred Device " 18(3 (&5,),(34 . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: * Guardring for Stress Protection * Low Forward Voltage * 150C Operating Junction Temperature http://onsemi.com Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal SCHOTTKY BARRIER RECTIFIERS 25 AMPERES 35 and 45 VOLTS Leads are Readily Solderable * Lead Temperature for Soldering Purposes: * * 260C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: B2535, B2545 4 MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBR2535CT MBR2545CT VRRM VRWM VR Average Rectified Forward Current (Rated VR, TC = 130C) IF(AV) Peak Repetitive Forward Current, per Diode Leg (Rated VR, Square Wave, 20 kHz, TC = 130C) IFRM 30 A Non-Repetitive Peak Surge Current per Diode Leg (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg -65 to +175 C Operating Junction Temperature TJ -65 to +150 C dv/dt 1000 V/s Voltage Rate of Change (Rated VR) Value Unit V 35 45 30 1 A 2 3 TO-220AB CASE 221A PLASTIC MARKING DIAGRAM B25x5 B25x5 = Device Code x = 3 or 4 ORDERING INFORMATION Device Package Shipping MBR2535CT TO-220 50 Units/Rail MBR2545CT TO-220 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 198 Publication Order Number: MBR2535CT/D MBR2535CT, MBR2545CT THERMAL CHARACTERISTICS (Per Diode Leg) Characteristic Maximum Thermal Resistance, Junction to Case Symbol MBR2535CT MBR2545CT Unit RJC 1.5 1.5 C/W 0.73 0.82 0.73 0.82 40 0.2 40 0.2 ELECTRICAL CHARACTERISTICS (Per Diode Leg) Maximum Instantaneous Forward Voltage (Note 1.) (iF = 30 Amps, TC = 125C) (iF = 30 Amps, TC = 25C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 125C) (Rated dc Voltage, TC = 25C) iR Volts mA -# -# "+ +/+,.++'-B > "',-'-'(.,(+0+.++'-&), 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. K "',-'-'(., (+0+ /(%- /(%-, /+ +/+, /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current http://onsemi.com 199 " / /+ (+0+.++'-&), 98 ,*.+ 0/ +- /(%- ))%" +# 0 +- /+ ))%" 98 +# 0 0>I= -( !:6I ,>C@ +# 0 'D !:6I ,>C@ ,*.+ 0/ 98 ,*.+ 0/ - , -&)+-.+ - &"'- -&)+-.+ Figure 3. Current Derating, Case Figure 4. Current Derating, Ambient )/ /+ )(0+",,")-"('0--, "/ /+ (+0+.++'-&), MBR2535CT, MBR2545CT ,*.+ 0/ " +,",-"/R%( )$ " / " )"--"/R%( )$ " 98 / -# " /+ (+0+ .++'- &), Figure 5. Forward Power Dissipation http://onsemi.com 200 Preferred Device " 18(3 (&5,),(3 . . . using the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: * Dual Diode Construction -- Terminals 1 and 3 May Be Connected * * * * for Parallel Operation at Full Rating 45 V Blocking Voltage Low Forward Voltage Drop Guardring for Stress Protection 150C Operating Junction Temperature http://onsemi.com SCHOTTKY BARRIER RECTIFIER 30 AMPERES 45 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 Units Per Plastic Tube Marking: B3045 4 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Current IF(AV) (TC = 130C) Per Device Per Diode 1 A IFRM 30 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Current, per Diode (2.0 s, 1.0 kHz) IRRM 2.0 A Storage Temperature Range Tstg -65 to +175 C Operating Junction Temperature TJ -65 to +150 C Peak Surge Junction Temperature (Forward Current Applied) TJ(pk) 175 C Voltage Rate of Change (Rated VR) dv/dt 3 TO-220AB CASE 221A STYLE 6 30 15 Peak Repetitive Forward Current, per Diode (Square Wave, VR = 45 V, 20 kHz) 2 MARKING DIAGRAM B3045 B3045 = Device Code ORDERING INFORMATION 10,000 V/s Device MBR3045ST Package Shipping TO-220 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 201 Publication Order Number: MBR3045ST/D MBR3045ST THERMAL CHARACTERISTICS (Per Diode) Characteristic Thermal Resistance, Junction to Case Symbol Value Unit RJC 1.5 C/W vF 0.76 0.72 0.60 Volts IR 0.2 40 mA ELECTRICAL CHARACTERISTICS (Per Diode) Instantaneous Forward Voltage (Note 1.) (iF = 30 Amp, TC = 25C) (iF = 30 Amp, TC = 125C) (iF = 20 Amp, TC = 125C) Instantaneous Reverse Current (Note 1.) (VR = 45 Volts, TC = 25C) (VR = 45 Volts, TC = 125C) -# -# "+ +/+,.++'-B > "',-'-'(.,(+0+.++'-&), 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% K "',-'-'(., (+0+ /(%- /(%-, /+ +/+, /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current http://onsemi.com 202 " / /+ (+0+.++'-&), 98 ,*.+ 0/ +- /(%- ))%" +# 0 +- /+ ))%" 98 +# 0 0>I= -( !:6I ,>C@ +# 0 'D !:6I ,>C@ ,*.+ 0/ 98 ,*.+ 0/ - , -&)+-.+ - &"'- -&)+-.+ Figure 3. Current Derating, Case Figure 4. Current Derating, Ambient )/ /+ )(0+",,")-"('0--, "/ /+ (+0+.++'-&), MBR3045ST ,*.+ 0/ " +,",-"/R%( )$ " / " )"--"/R%( )$ " 98 / -# " /+ (+0+ .++'- &), Figure 5. Forward Power Dissipation http://onsemi.com 203 MBR745 is a Preferred Device " 18(3 (&5,),(34 . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: * * * * Guardring for Stress Protection Low Forward Voltage 150C Operating Junction Temperature Epoxy Meets UL94, VO at 1/8 http://onsemi.com Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * SCHOTTKY BARRIER RECTIFIERS 7.5 AMPERES 35 and 45 VOLTS Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: B735, B745 4 MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBR735 MBR745 VRRM VRWM VR Average Rectified Forward Current (Rated VR, TC = 105C) IF(AV) 7.5 A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 105C) IFRM 15 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg -65 to +175 C Operating Junction Temperature TJ -65 to +150 C Voltage Rate of Change (Rated VR) Value Unit V 1 35 45 3 TO-220AC CASE 221B PLASTIC MARKING DIAGRAM B7x5 dv/dt B7x5 x V/s = Device Code = 3 or 4 10,000 ORDERING INFORMATION Device Package Shipping MBR735 TO-220 50 Units/Rail MBR745 TO-220 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 204 Publication Order Number: MBR735/D MBR735, MBR745 THERMAL CHARACTERISTICS Symbol Value Unit Maximum Thermal Resistance, Junction to Case Characteristic RJC 3.0 C/W Maximum Thermal Resistance, Junction to Ambient RJA 60 C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1.) (iF = 7.5 Amps, TC = 125C) (iF = 15 Amps, TC = 125C) (iF = 15 Amps, TC = 25C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 125C) (Rated dc Voltage, TC = 25C) iR Volts 0.57 0.72 0.84 mA 15 0.1 -# "+ +/+,.++'-B > "',-'-'(.,(+0+.++'-&), 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. -# > "',-'-'(., (+0+ /(%- /(%-, /+ +/+, /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current http://onsemi.com 205 " / /+ (+0+.++'-&), 98 ,*.+ 0/ +- /(%- ))%" +# 0 +- /(%- ))%" 98 +# 0 +# 0 'D !:6I ,>C@ ,*.+ 0/ 98 - , -&)+-.+ - &"'- -&)+-.+ Figure 3. Current Derating, Case Figure 4. Current Derating, Ambient )/ /+ (+0+)(0+ ",,")-"('0--, "/ /+ (+0+.++'-&), MBR735, MBR745 98 "/ /+ (+0+ .++'- &), Figure 5. Power Dissipation http://onsemi.com 206 MBR1045 is a Preferred Device " 18(3 (&5,),(34 . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: * * * * Guardring for Stress Protection Low Forward Voltage 150C Operating Junction Temperature Epoxy Meets UL94, VO at 1/8 http://onsemi.com Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 35 to 45 VOLTS Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: B1035, B1045 4 MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBR1035 MBR1045 VRRM VRWM VR Average Rectified Forward Current (Rated VR, TC = 135C) IF(AV) 10 A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 135C) IFRM 20 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) See Figure 12. IRRM 1.0 A Storage Temperature Range Tstg -65 to +175 C Operating Junction Temperature TJ -65 to +150 C Voltage Rate of Change (Rated VR) Value Unit V 1 35 45 3 TO-220AC CASE 221B PLASTIC MARKING DIAGRAM B10x5 dv/dt B10x5 = Device Code x = 3 or 4 V/s 10,000 ORDERING INFORMATION Device Package Shipping MBR1035 TO-220 50 Units/Rail MBR1045 TO-220 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 3 207 Publication Order Number: MBR1035/D MBR1035, MBR1045 THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance, Junction to Case Symbol Value Unit RJC 2.0 C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1.) (iF = 10 Amps, TC = 125C) (iF = 20 Amps, TC = 125C) (iF = 20 Amps, TC = 25C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 125C) (Rated dc Voltage, TC = 25C) iR Volts 0.57 0.72 0.84 mA 15 0.1 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. -# >"',-'-'(.,(+0+.++'-&), >"',-'-'(.,(+0+.++'-&), -# K "',-'-'(., /(%- /(%-, K "',-'-'(., /(%- /(%-, Figure 1. Maximum Forward Voltage Figure 2. Typical Forward Voltage http://onsemi.com 208 Figure 4. Maximum Surge Capability +- /(%- ))%" " " )$ R+,",-"/R%( / " )$ )"-"/R%( " ,*.+ 0/ / 98 +- /(%- ))%" " " )$ R+,",-"/R%( / ,*.+ 0/ 98 " )"-"/R%( )$ " / - , -&)+-.+ - &"'- -&)+-.+ Figure 5. Current Derating, Infinite Heatsink Figure 6. Current Derating, RJA = 16C/W ,"' 0/ +,",-"/ %( 98 ,*.+ 0/ " )"-"/R%( )$ " / -# Figure 3. Maximum Reverse Current '.&+ ( 2%, - !O /+ +/+, /(%- /(%-, "/ /+ (+0+.++'-&), "/ /+ (+0+.++'-&), )/ /+ (+0+)(0+",,")-"('0--, -# "/ /+ (+0+.++'-&), "+ +/+,.++'-B ",& )$!% 0/.++'-&), MBR1035, MBR1045 +- /(%- ))%" +# 0 " " )$ R+,",-"/R%( / ,*.+ 0/ 98 " )"-"/R%( )$ " / "/ /+ (+0+ .++'- &), - &"'- -&)+-.+ Figure 7. Forward Power Dissipation Figure 8. Current Derating, Free Air http://onsemi.com 209 GI-+',"'--!+&%+,",-' '(+&%"3 MBR1035, MBR1045 )E@ -"& I .-2 2% IE I )$ )(0+ )E@ >H E:6@ D; 6C :FJ>K6A:CI HFJ6G: EDL:G EJAH: -#% )E@ * +#% 4 * GI IE GIE GI5 L=:G: -#% I=: >C8G:6H: >C ?JC8I>DC I:BE:G6IJG: 67DK: I=: A:69 I:BE:G6IJG: GI CDGB6A>O:9 K6AJ: D; IG6CH>:CI I=:GB6A G:H>HI6C8: 6I I>B: I >: GI IE CDGB6A>O:9 K6AJ: D; IG6CH>:CI I=:GB6A G:H>HI6C8: 6I I>B: I IE )E@ IE I -"& BH Figure 9. Thermal Response HIGH FREQUENCY OPERATION )"-'E Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 10. ) Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2.0 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss; it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage. &1"&.& -2)"% /+ +/+, /(%- /(%-, Figure 10. Capacitance http://onsemi.com 210 MBR1035, MBR1045 ,!(--$2 !") V />:L %.&"'.& ('-- &-% ,!(--$2 !") ,:: />:L )%-"'.& ++"+ &-% '( %.&"'.& 0"+ .++"' Motorola builds quality and reliability into its Schottky Rectifiers. First is the chip, which has an interface metal between the barrier metal and aluminum-contact metal to eliminate any possible interaction between the two. The indicated guardring prevents dv/dt problems, so snubbers are not mandatory. The guardring also operates like a zener to absorb over-voltage transients. Second is the package. The Schottky chip is bonded to the copper heat sink using a specially formulated solder. This gives the unit the capability of passing 10,000 operating thermal-fatigue cycles having a TJ of 100C. The epoxy molding compound is rated per UL 94, V0 @ 1/8. Wire bonds are 100% tested in assembly as they are made. Third is the electrical testing, which includes 100% dv/dt at 1600 V/s and reverse avalanche as part of device characterization. -!( ,(%+ ")) ())+ %, ())+ (1" ),,"/-"(' .% +- )(12 Figure 11. Schottky Rectifier / B98 @ / / /98 ' .- H @!O .++'&)%"-. #., &), +(' ' +(' ' Figure 12. Test Circuit for dv/dt and Reverse Surge Current http://onsemi.com 211 MBR1060 and MBR10100 are Preferred Devices " 18(3 (&5,),(34 . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: * * * * * * * Guard-Ring for Stress Protection Low Forward Voltage 150C Operating Junction Temperature Epoxy Meets UL94, VO at 1/8 Low Power Loss/High Efficiency High Surge Capacity Low Stored Charge Majority Carrier Conduction http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 60 to 100 VOLTS Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal 4 Leads are Readily Solderable * Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds * Shipped 50 units per plastic tube * Marking: B1060, B1080, B1090, B10100 1 3 TO-220AC CASE 221B PLASTIC MAXIMUM RATINGS Please See the Table on the Following Page MARKING DIAGRAM B10x0 B10x0 = Device Code x = 6, 8, 9 or 10 ORDERING INFORMATION Device Package Shipping MBR1060 TO-220 50 Units/Rail MBR1080 TO-220 50 Units/Rail MBR1090 TO-220 50 Units/Rail MBR10100 TO-220 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 3 212 Publication Order Number: MBR1060/D MBR1060, MBR1080, MBR1090, MBR10100 MAXIMUM RATINGS MBR Rating Symbol 1060 1080 1090 10100 60 80 90 100 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR Volts Average Rectified Forward Current (Rated VR) TC = 133C IF(AV) 10 Amps Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 133C IFRM 20 Amps Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 Amps Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 0.5 Amp Operating Junction Temperature TJ 65 to +150 C Storage Temperature Tstg 65 to +175 C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s RJC RJA 2.0 60 C/W THERMAL CHARACTERISTICS Maximum Thermal Resistance -- Junction to Case -- Junction to Ambient ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1.) (iF = 10 Amps, TC = 125C) (iF = 10 Amps, TC = 25C) (iF = 20 Amps, TC = 125C) (iF = 20 Amps, TC = 25C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 125C) (Rated dc Voltage, TC = 25C) iR Volts 0.7 0.8 0.85 0.95 mA 6.0 0.10 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. http://onsemi.com 213 -# "+ +/+,.++'-B -# ,*.+ 0/ 98 +- /(%- ))%" +# 0 Figure 2. Typical Reverse Current Figure 1. Typical Forward Voltage /+ +/+, /(%- /(%-, K "',-'-'(., /(%- /(%-, " / /+ (+0+.++'-&), !-,"'$ +# 0 '( !-,"'$ +# 0 +- /(%- ))%" 98 98 ,*.+ 0/ - &"'- -&)+-.+ Figure 3. Current Derating, Case Figure 4. Current Derating, Ambient - ")$ "/ ")$ "/ ")$ "/ 98 ")$ "/ ,*.+ 0/ "/ /+ .++'- &), Figure 5. Forward Power Dissipation http://onsemi.com 214 - , -&)+-.+ )/ /+ )(0+",,")-"('0--, "/ /+ (+0+.++'-&), > "',-'-'(.,(+0+.++'-&), MBR1060, MBR1080, MBR1090, MBR10100 MBR1645 is a Preferred Device " 18(3 (&5,),(34 . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: * Guardring for Stress Protection * Low Forward Voltage * 150C Operating Junction Temperature http://onsemi.com Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal SCHOTTKY BARRIER RECTIFIERS 16 AMPERES 35 and 45 VOLTS Leads are Readily Solderable * Lead Temperature for Soldering Purposes: * * 260C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: B1635, B1645 4 MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBR1635 MBR1645 VRRM VRWM VR Average Rectified Forward Current (Rated VR, TC = 125C) IF(AV) 16 A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 125C) IFRM 32 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg -65 to +175 C Operating Junction Temperature TJ -65 to +150 C Voltage Rate of Change (Rated VR) Value Unit V 35 45 1 3 TO-220AC CASE 221B PLASTIC MARKING DIAGRAM B16x5 dv/dt V/s B16x5 = Device Code x = 3 or 4 10,000 ORDERING INFORMATION Device Package Shipping MBR1635 TO-220 50 Units/Rail MBR1645 TO-220 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 215 Publication Order Number: MBR1635/D MBR1635, MBR1645 THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance, Junction to Case Symbol Value Unit RJC 1.5 C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1.) (iF = 16 Amps, TC = 125C) (iF = 16 Amps, TC = 25C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 125C) (Rated dc Voltage, TC = 25C) iR Volts 0.57 0.63 mA 40 0.2 -# -# "+ +/+,.++'-B > "',-'-'(.,(+0+.++'-&), 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. K "',-'-'(., (+0+ /(%- /(%-, /+ +/+, /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current http://onsemi.com 216 98 ,*.+ 0/ +- /(%- ))%" +# 0 " / /+ (+0+.++'-&), +- /+ ))%" 98 +# 0 0>I= -( !:6I ,>C@ +# 0 'D !:6I ,>C@ ,*.+ 0/ 98 ,*.+ 0/ - , -&)+-.+ - &"'- -&)+-.+ Figure 3. Current Derating, Case Figure 4. Current Derating, Ambient )/ /+ )(0+",,")-"('0--, "/ /+ (+0+.++'-&), MBR1635, MBR1645 ,*.+ 0/ " +,",-"/R%( )$ " / " )"--"/R%( )$ " 98 / -# "/ /+ (+0+ .++'- &), Figure 5. Forward Power Dissipation http://onsemi.com 217 " 18(3 (&5,),(3 . . . employing the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, low voltage converters, OR'ing diodes, and polarity protection devices. * Very Low Forward Voltage (0.28 V Maximum @ 19 Amps, 70C) * Guardring for Stress Protection * Highly Stable Oxide Passivated Junction (100C Operating Junction Temperature) http://onsemi.com SCHOTTKY BARRIER RECTIFIER 25 AMPERES 15 VOLTS * Epoxy Meets UL94, VO at 1/8 Mechanical Characteristics 1 * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal 3 4 Leads are Readily Solderable * Lead Temperature for Soldering Purposes: * * 4 260C Max. for 10 Seconds Shipped 50 Units Per Plastic Tube Marking: B2515L MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 15 V Average Rectified Forward Current (Rated VR, TC = 90C) IF(AV) 25 A Peak Repetitive Forward Current, per Leg (Rated VR, Square Wave, 20 kHz, TC = 90C) IFRM 30 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg -65 to +125 C Operating Junction Temperature TJ -65 to +100 C RJC 2.0 C/W Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 1 3 TO-220AC CASE 221B STYLE 1 MARKING DIAGRAM B2515L THERMAL CHARACTERISTICS Thermal Resistance -- Junction to Case 1 218 B2515L = Device Code ORDERING INFORMATION Device Package Shipping MBR2515L TO-220 50 Units/Rail Publication Order Number: MBR2515L/D MBR2515L ELECTRICAL CHARACTERISTICS Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 1.) (iF = 25 Amps, TJ = 25C) (iF = 25 Amps, TJ = 70C) (iF = 19 Amps, TJ = 70C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated DC Voltage, TJ = 25C) (Rated DC Voltage, TJ = 70C) IR Value Unit Volts 0.45 0.42 0.28 mA 15 200 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. http://onsemi.com 219 Preferred Device " &+155-: 18(3 (&5,),(3 The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low-voltage, high-frequency switching power supplies, free wheeling diodes and polarity protection diodes. * * * * * * * * * * Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Matched Dual Die Construction High Junction Temperature Capability High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection Epoxy Meets UL94, VO at 1/8 Electrically Isolated. No Isolation Hardware Required. UL Recognized File #E69369 (Note 1.) http://onsemi.com SCHOTTKY BARRIER RECTIFIER 20 AMPERES 60 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead Temperature for Soldering Purposes: * * 1 260C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: B2060 2 3 ISOLATED TO-220 CASE 221D STYLE 3 MAXIMUM RATINGS MARKING DIAGRAM Please See the Table on the Following Page 1. UL Recognized mounting method is per Figure 4. B2060 B2060 = Device Code ORDERING INFORMATION Device MBRF2060CT Package Shipping TO-220 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 220 Publication Order Number: MBRF2060CT/D MBRF2060CT MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit VRRM VRWM VR 60 Volts IF(AV) 10 20 Amps Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz), TC = 133C IFRM 20 Amps Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 Amps Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR), TC = 133C Total Device Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 0.5 Amp TJ, Tstg - 65 to +150 C Voltage Rate of Change (Rated VR) dv/dt 10000 V/s RMS Isolation Voltage (t = 1.0 second, R.H. 30%, TA = 25C) (Note 2.) Per Figure 3. Per Figure 4. (Note 1.) Per Figure 5. Viso1 Viso2 Viso3 4500 3500 1500 Volts RJC 4.0 C/W TL 260 C Symbol Max Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS (Per Leg) Maximum Thermal Resistance, Junction to Case Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Maximum Instantaneous Forward Voltage (Note 3.) (iF = 10 Amp, TC = 25C) (iF = 10 Amp, TC = 125C) (iF = 20 Amp, TC = 25C) (iF = 20 Amp, TC = 125C) vF Maximum Instantaneous Reverse Current (Note 3.) (Rated DC Voltage, TC = 25C) (Rated DC Voltage, TC = 125C) iR Unit Volts 0.85 0.75 0.95 0.85 mA 0.15 150 -# " ++/+,.++'-B > "',-'-'(.,(+0+.++'-&), 1. UL Recognized mounting method is per Figure 4. 2. Proper strike and creepage distance must be provided. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% -# -# -# K "',-'-'(., /(%- /(%-, -# Figure 1. Typical Forward Voltage Per Diode /+ +/+, /(%- /(%-, Figure 2. Typical Reverse Current Per Diode http://onsemi.com 221 MBRF2060CT TEST CONDITIONS FOR ISOLATION TESTS* %") &(.'- .%%2 ",(%- )$ %") &(.'- .%%2 ",(%- )$ %, !-,"'$ &"' &(.'- .%%2 ",(%- )$ &"' %, %, !-,"'$ !-,"'$ &"' Figure 4. Clip Mounting Position for Isolation Test Number 2 Figure 3. Clip Mounting Position for Isolation Test Number 1 Figure 5. Screw Mounting Position for Isolation Test Number 3 * Measurement made between leads and heatsink with all leads shorted together. MOUNTING INFORMATION** ,+0 %") )%"' 0,!+ !-,"'$ (&)+,,"(' 0,!+ !-,"'$ '.- 6a. Screw-Mounted 6b. Clip-Mounted Figure 6. Typical Mounting Techniques Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. **For more information about mounting power semiconductors see Application Note AN1040. http://onsemi.com 222 Preferred Device " &+155-: 18(3 (&5,),(3 The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low-voltage, high-frequency switching power supplies, free wheeling diodes and polarity protection diodes. * * * * * * * * * * Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Matched Dual Die Construction High Junction Temperature Capability High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection Epoxy Meets UL94, VO at 1/8 Electrically Isolated. No Isolation Hardware Required. UL Recognized File #E69369 (Note 1.) http://onsemi.com SCHOTTKY BARRIER RECTIFIER 20 AMPERES 100 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead Temperature for Soldering Purposes: * * 1 260C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: B20100 2 3 ISOLATED TO-220 CASE 221D STYLE 3 MARKING DIAGRAM MAXIMUM RATINGS Please See the Table on the Following Page 1. UL Recognized mounting method is per Figure 4. B20100 B20100 = Device Code ORDERING INFORMATION Device Package Shipping MBRF20100CT TO-220 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 223 Publication Order Number: MBRF20100CT/D MBRF20100CT MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit VRRM VRWM VR 100 Volts IF(AV) 10 20 Amps Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz), TC = 133C IFRM 20 Amps Non-repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 Amps Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR), TC = 133C Total Device Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 0.5 Amp TJ, Tstg - 65 to +150 C Voltage Rate of Change (Rated VR) dv/dt 10000 V/s RMS Isolation Voltage (t = 1.0 second, R.H. 30%, TA = 25C) (Note 2.) Per Figure 3. Per Figure 4. (Note 1.) Per Figure 5. Viso1 Viso2 Viso3 4500 3500 1500 Volts RJC 3.5 C/W TL 260 C Symbol Max Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS (Per Leg) Maximum Thermal Resistance, Junction to Case Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Maximum Instantaneous Forward Voltage (Note 3.) (iF = 10 Amp, TC = 25C) (iF = 10 Amp, TC = 125C) (iF = 20 Amp, TC = 25C) (iF = 20 Amp, TC = 125C) vF Maximum Instantaneous Reverse Current (Note 3.) (Rated DC Voltage, TC = 25C) (Rated DC Voltage, TC = 125C) iR Unit Volts 0.85 0.75 0.95 0.85 mA 0.15 150 -# " ++/+,.++'-B > "',-'-'(.,(+0+.++'-&), 1. UL Recognized mounting method is per Figure 4. 2. Proper strike and creepage distance must be provided. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% -# -# -# K "',-'-'(., /(%- /(%-, -# Figure 1. Typical Forward Voltage Per Diode /+ +/+, /(%- /(%-, Figure 2. Typical Reverse Current Per Diode http://onsemi.com 224 MBRF20100CT TEST CONDITIONS FOR ISOLATION TESTS* %") &(.'- .%%2 ",(%- )$ %") &(.'- .%%2 ",(%- )$ %, !-,"'$ &"' &(.'- .%%2 ",(%- )$ &"' %, %, !-,"'$ !-,"'$ &"' Figure 4. Clip Mounting Position for Isolation Test Number 2 Figure 3. Clip Mounting Position for Isolation Test Number 1 Figure 5. Screw Mounting Position for Isolation Test Number 3 * Measurement made between leads and heatsink with all leads shorted together. MOUNTING INFORMATION** ,+0 %") )%"' 0,!+ !-,"'$ (&)+,,"(' 0,!+ !-,"'$ '.- 6a. Screw-Mounted 6b. Clip-Mounted Figure 6. Typical Mounting Techniques Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. **For more information about mounting power semiconductors see Application Note AN1040. http://onsemi.com 225 Preferred Device " &+155-: 18(3 (&5,),(3 The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low-voltage, high-frequency switching power supplies, free wheeling diodes and polarity protection diodes. * * * * * * * * * * Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Matched Dual Die Construction High Junction Temperature Capability High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection Epoxy Meets UL94, VO at 1/8 Electrically Isolated. No Isolation Hardware Required. UL Recognized File #E69369 http://onsemi.com SCHOTTKY BARRIER RECTIFIER 20 AMPERES 200 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 1 * Lead Temperature for Soldering Purposes: * * 260C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: B20200 2 3 ISOLATED TO-220 CASE 221D STYLE 3 MARKING DIAGRAM MAXIMUM RATINGS Please See the Table on the Following Page B20200 B20200 = Device Code ORDERING INFORMATION Device Package Shipping MBRF20200CT TO-220 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 226 Publication Order Number: MBRF20200CT/D MBRF20200CT MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit VRRM VRWM VR 200 Volts IF(AV) 10 20 Amps Peak Repetitive Forward Current, Per Leg (Rated VR, Square Wave, 20 kHz) TC = 90C IFRM 20 Amps Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 Amps Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 1.0 Amp TJ, Tstg -65 to +150 C dv/dt 10,000 V/s RJC 3.5 C/W Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 125C Per Leg Per Package Operating Junction Temperature and Storage Temperature Voltage Rate of Change (Rated VR) THERMAL CHARACTERISTICS (Per Leg) Thermal Resistance -- Junction to Case ELECTRICAL CHARACTERISTICS (Per Leg) Rating Maximum Instantaneous Forward Voltage (Note 1.) (iF = 10 Amp, TC = 25C) (iF = 10 Amp, TC = 125C) (iF = 20 Amp, TC = 25C) (iF = 20 Amp, TC = 125C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 25C) (Rated dc Voltage, TC = 125C) iR Volts 0.9 0.8 1.0 0.9 mA 1.0 50 DYNAMIC CHARACTERISTICS (Per Leg) Capacitance (VR = -5.0 V, TC = 25C, Freq. = 1.0 MHz) CT 500 pF 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% "+/+,.++'- + ""',-'(.,(+0+.++'-&) -# -# -# -# -# -# -# -# /+ +/+, .++'- /(%-, Figure 2. Typical Reverse Current (Per Leg) K "',-'-'(., /(%- /(%-, Figure 1. Typical Forward Voltage (Per Leg) http://onsemi.com 227 MBRF20200CT TEST CONDITIONS FOR ISOLATION TESTS* %") &(.'- .%%2 ",(%- )$ %") &(.'- .%%2 ",(%- )$ %, !-,"'$ &"' &(.'- .%%2 ",(%- )$ &"' %, %, !-,"'$ !-,"'$ &"' Figure 4. Clip Mounting Position for Isolation Test Number 2 Figure 3. Clip Mounting Position for Isolation Test Number 1 Figure 5. Screw Mounting Position for Isolation Test Number 3 * Measurement made between leads and heatsink with all leads shorted together. MOUNTING INFORMATION** ,+0 %") )%"' 0,!+ !-,"'$ (&)+,,"(' 0,!+ !-,"'$ '.- 6a. Screw-Mounted 6b. Clip-Mounted Figure 6. Typical Mounting Techniques Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. **For more information about mounting power semiconductors see Application Note AN1040. http://onsemi.com 228 Preferred Device " &+155-: 18(3 (&5,),(3 The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low-voltage, high-frequency switching power supplies, free wheeling diodes and polarity protection diodes. * * * * * * * * * * Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Matched Dual Die Construction High Junction Temperature Capability High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection Epoxy Meets UL94, VO at 1/8 Electrically Isolated. No Isolation Hardware Required. UL Recognized File #E69369 (Note 1.) http://onsemi.com SCHOTTKY BARRIER RECTIFIER 25 AMPERES 45 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead Temperature for Soldering Purposes: * * 1 260C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: B2545 2 3 ISOLATED TO-220 CASE 221D STYLE 3 MARKING DIAGRAM MAXIMUM RATINGS Please See the Table on the Following Page 1. UL Recognized mounting method is per Figure 4. B2545 B2545 = Device Code ORDERING INFORMATION Device MBRF2545CT Package Shipping TO-220 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 229 Publication Order Number: MBRF2545CT/D MBRF2545CT MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit VRRM VRWM VR 45 Volts IF(AV) 12.5 25 Amps Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR), TC = 125C Total Device Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz), TC = 125C IFRM Non-repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM Amps 25 Amps 150 Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 1.0 Amp TJ, Tstg - 65 to +150 C Voltage Rate of Change (Rated VR) dv/dt 10000 V/s RMS Isolation Voltage (t = 1.0 second, R.H. 30%, TA = 25C) (Note 2.) Per Figure 3. Per Figure 4. (Note 1.) Per Figure 5. Viso1 Viso2 Viso3 4500 3500 1500 Volts RJC 3.5 C/W TL 260 C Symbol Max Operating Junction and Storage Temperature THERMAL CHARACTERISTICS (Per Leg) Maximum Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Maximum Instantaneous Forward Voltage (Note 3.) (iF = 12.5 Amps, TC = 25C) (iF = 12.5 Amps, TC = 125C) vF Maximum Instantaneous Reverse Current (Note 3.) (Rated DC Voltage, TC = 25C) (Rated DC Voltage, TC = 125C) iR Unit Volts 0.7 0.62 mA 0.2 40 -# " ++/+,.++'-B > "',-'-'(.,(+0+.++'-&), 1. UL Recognized mounting method is per Figure 4. 2. Proper strike and creepage distance must be provided. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% K "',-'-'(., /(%- /(%-, -# /+ +/+, /(%- /(%-, Figure 2. Typical Reverse Current, Per Leg Figure 1. Typical Forward Voltage, Per Leg http://onsemi.com 230 MBRF2545CT TEST CONDITIONS FOR ISOLATION TESTS* %") &(.'- .%%2 ",(%- )$ %") &(.'- .%%2 ",(%- )$ %, !-,"'$ &"' &(.'- .%%2 ",(%- )$ &"' %, %, !-,"'$ !-,"'$ &"' Figure 4. Clip Mounting Position for Isolation Test Number 2 Figure 3. Clip Mounting Position for Isolation Test Number 1 Figure 5. Screw Mounting Position for Isolation Test Number 3 * Measurement made between leads and heatsink with all leads shorted together. MOUNTING INFORMATION** ,+0 %") )%"' 0,!+ !-,"'$ (&)+,,"(' 0,!+ !-,"'$ '.- 6a. Screw-Mounted 6b. Clip-Mounted Figure 6. Typical Mounting Techniques Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. **For more information about mounting power semiconductors see Application Note AN1040. http://onsemi.com 231 Preferred Device " 18(3 (&5,),(3 . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: * Dual Diode Construction -- Terminals 1 and 3 may be Connected for * * * Parallel Operation at Full Rating Guardring for Stress Protection Low Forward Voltage 150C Operating Junction Temperature Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 4.3 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * http://onsemi.com SCHOTTKY BARRIER RECTIFIER 30 AMPERES 45 VOLTS Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 30 units per plastic tube Marking: B3045 4 MAXIMUM RATINGS Rating Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR, TC = 105C) Per Device Per Diode IF(AV) Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz) Per Diode IFRM Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 200 A Peak Repetitive Reverse Current (2.0 s, 1.0 kHz) Per Diode See Figure 6. IRRM 2.0 A Storage Temperature Range Tstg -65 to +175 C Operating Junction Temperature TJ -65 to +150 C Peak Surge Junction Temperature (Forward Current Applied) TJ(pk) 175 C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s 1 2 3 A 30 15 30 SOT-93 CASE 340D PLASTIC A MARKING DIAGRAM B3045 B3045 = Device Code ORDERING INFORMATION Device MBR3045PT Package Shipping SOT-93 30 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 1 232 Publication Order Number: MBR3045PT/D MBR3045PT THERMAL CHARACTERISTICS PER DIODE Symbol Max Unit Thermal Resistance, Junction to Case Rating RJC 1.4 C/W Thermal Resistance, Junction to Ambient RJA 40 C/W ELECTRICAL CHARACTERISTICS PER DIODE Instantaneous Forward Voltage (Note 1.) (iF = 20 Amps, TC = 125C) (iF = 30 Amps, TC = 125C) (iF = 30 Amps, TC = 25C) vF Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 125C) (Rated dc Voltage, TC = 25C) iR Volts 0.60 0.72 0.76 mA 100 1.0 -# "+ +/+,.++'-B > "',-'-'(.,(+0+.++'-&), 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. -# K "',-'-'(., (+0+ /(%- /(%-, /+ +/+, /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current http://onsemi.com 233 " " )$ R+,",-"/R%( / ,*.+ 0/ 98 " )"-"/R%( )$ " / - , -&)+-.+ )/ /+ (+0+)(0+",,")-"('0--, "/ /+ (+0+.++'-&), MBR3045PT " )"-"/R%( )$ " ,"' 0/ +,",-"/ %( / ,*.+ 0/ 98 -# Figure 3. Current Derating (Per Leg) "/ /+ (+0+ .++'- &), Figure 4. Forward Power Dissipation (Per Leg) / B98 @ / )"-'E / /98 .- ' H @!O .++'&)%"-. #., &), /+ +/+, /(%- /(%-, Figure 5. Capacitance +(' ' +(' ' Figure 6. Test Circuit for Repetitive Reverse Current http://onsemi.com 234 " 18(3 (&5,),(3 The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com * Dual Diode Construction -- Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating * 45 Volt Blocking Voltage * Low Forward Voltage Drop * Guardring for Stress Protection and High dv/dt Capability * SCHOTTKY BARRIER RECTIFIER 40 AMPERES 45 VOLTS (> 10 V/ns) 150C Operating Junction Temperature Mechanical Characteristics * Case: Epoxy, Molded * Weight: 4.3 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal 1 2,4 3 Leads are Readily Solderable 4 * Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds * Shipped 30 Units Per Plastic Tube * Marking: B4045 1 MAXIMUM RATINGS Rating Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR, TC = 125C) Per Diode Per Device IF(AV) Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz @ TC = 90C) Per Diode IFRM 40 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 400 A Peak Repetitive Reverse Current (2.0 s, 1.0 kHz) IRRM 2.0 A Storage Temperature Range Tstg -65 to +175 C Operating Junction Temperature TJ -65 to +150 C Peak Surge Junction Temperature (Forward Current Applied) TJ(pk) 175 C Voltage Rate of Change dv/dt 10,000 V/s 2 3 SOT-93 CASE 340D STYLE 2 A 20 40 MARKING DIAGRAM B4045 B4045 = Device Code ORDERING INFORMATION Device MBR4045PT Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 4 235 Package Shipping SOT-93 30 Units/Rail Publication Order Number: MBR4045PT/D MBR4045PT THERMAL CHARACTERISTICS Rating Thermal Resistance -- Junction to Case Symbol Max Unit RJC 1.4 C/W ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1.) @ IF = 20 Amps, TC = 25C @ IF = 20 Amps, TC = 125C @ IF = 40 Amps, TC = 25C @ IF = 40 Amps, TC = 125C VF Instantaneous Reverse Current (Note 1.) @ Rated DC Voltage, TC = 25C @ Rated DC Voltage, TC = 100C IR Volts 0.70 0.60 0.80 0.75 mA 1.0 50 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% " ++/+,.++'-B > "',-'-'(.,(+0+.++'-&), TYPICAL ELECTRICAL CHARACTERISTICS - - - K "',-'-'(., (+0+ /(%- B/ - - - )"-'E /+ +/+, /(%- /(%-, Figure 2. Typical Reverse Current " //+ (+0+.++'-&), Figure 1. Typical Forward Voltage /+ +/+, /(%- /(%-, ,*.+ 0/ /+ / Figure 3. Typical Capacitance Per Leg - , -&)+-.+ Figure 4. Current Derating Per Leg http://onsemi.com 236 " 18(3 (&5,),(3 The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com * Dual Diode Construction -- Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating SCHOTTKY BARRIER RECTIFIER 60 AMPERES 45 VOLTS * 45 Volt Blocking Voltage * Low Forward Voltage Drop * Guardring for Stress Protection and High dv/dt Capability * (> 10 V/ns) 150C Operating Junction Temperature Mechanical Characteristics 1 * Case: Epoxy, Molded * Weight: 4.3 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal 2,4 3 Leads are Readily Solderable 4 * Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds * Shipped 30 Units Per Plastic Tube * Marking: B6045 1 MAXIMUM RATINGS Rating Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR, TC = 125C) Per Diode Per Device IF(AV) Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz @ TC = 90C) Per Diode IFRM 60 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 500 A Peak Repetitive Reverse Current (2.0 s, 1.0 kHz) IRRM 2.0 A Storage Temperature Range Tstg -65 to +175 C Operating Junction Temperature TJ -65 to +150 C Peak Surge Junction Temperature (Forward Current Applied) TJ(pk) 175 C Voltage Rate of Change dv/dt 10,000 V/s 2 3 SOT-93 CASE 340D STYLE 2 A 30 60 MARKING DIAGRAM B6045 B6045 = Device Code ORDERING INFORMATION Device MBR6045PT Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 4 237 Package Shipping SOT-93 30 Units/Rail Publication Order Number: MBR6045PT/D MBR6045PT THERMAL CHARACTERISTICS Rating Thermal Resistance -- Junction to Case Symbol Max Unit RJC 1.0 C/W ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1.) @ IF = 30 Amps, TC = 25C @ IF = 30 Amps, TC = 125C @ IF = 60 Amps, TC = 25C VF Instantaneous Reverse Current (Note 1.) @ Rated DC Voltage, TC = 25C @ Rated DC Voltage, TC = 100C IR Volts 0.62 0.55 0.75 mA 1.0 50 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% TYPICAL ELECTRICAL CHARACTERISTICS " ++/+,.++'-B - - - /+ +/+, /(%- /(%-, > "',-'-'(.,(+0+.++'-&), Figure 1. Typical Reverse Current - K "',-'-'(., (+0+ /(%- B/ Figure 2. Typical Forward Voltage http://onsemi.com 238 Preferred Device " 18(3 (&5,),(3 The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com * Very Low Forward Voltage Drop (Max 0.58 V @ 100C) * Guardring for Stress Protection and High dv/dt Capability * * (> 10 V/ns) 150C Operating Junction Temperature Specially Designed for SWITCHMODE Power Supplies with Operating Frequency up to 300 kHz Mechanical Characteristics SCHOTTKY BARRIER RECTIFIER LOW VF 50 AMPERES 25 VOLTS * Case: Epoxy, Molded * Weight: 4.3 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal 3 1, 4 Leads are Readily Solderable * Lead Temperature for Soldering Purposes: 4 260C Max. for 10 Seconds * Shipped 30 Units Per Plastic Tube * Marking: B5025L MAXIMUM RATINGS Rating 1 Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 25 V Average Rectified Forward Current TC = 125C IF(AV) Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz @ TC = 90C) Per Diode IFRM 150 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 300 A Peak Repetitive Reverse Current (2.0 s, 1.0 kHz) IRRM 2.0 A Storage Temperature Range Tstg -65 to +175 C Operating Junction Temperature TJ -65 to +150 C Peak Surge Junction Temperature (Forward Current Applied) TJ(pk) 175 C Voltage Rate of Change dv/dt 10,000 V/s 3 TO-218 CASE 340E STYLE 1 A 50 MARKING DIAGRAM B5025L B5025L = Device Code ORDERING INFORMATION Device MBR5025L Package Shipping TO-218 30 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 3 239 Publication Order Number: MBR5025L/D MBR5025L THERMAL CHARACTERISTICS Rating Thermal Resistance -- Junction to Case Symbol Max Unit RJC 0.75 C/W ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1.) @ IF = 50 Amps, TC = 25C @ IF = 50 Amps, TC = 125C @ IF = 30 Amps, TC = 25C VF Instantaneous Reverse Current (Note 1.) @ Rated DC Voltage, TC = 25C @ Rated DC Voltage, TC = 100C IR Volts 0.62 0.58 0.54 mA 0.5 60 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% TYPICAL ELECTRICAL CHARACTERISTICS " ++/+,.++'-B > "',-'-'(.,(+0+.++'-&), -# -# K "',-'-'(., (+0+ /(%- /(%-, Figure 2. Typical Reverse Current " //+ (+0+.++'-&), " //+ (+0+.++'-&), Figure 1. Typical Forward Voltage /+ +/+, /(%- /(%-, - , -&)+-.+ Figure 3. Current Derating, Case - &"'- -&)+-.+ Figure 4. Current Derating, Ambient http://onsemi.com 240 " Preferred Device " 18(3 (&5,),(3 . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: * Dual Diode Construction -- Terminals 1 and 3 may be Connected for * * * * Parallel Operation at Full Rating Guardring for Stress Protection Low Forward Voltage 150C Operating Junction Temperature Popular TO-247 Package http://onsemi.com SCHOTTKY BARRIER RECTIFIER 30 AMPERES 45 VOLTS Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 4.3 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 30 units per plastic tube Marking: B3045 MAXIMUM RATINGS Rating Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR, TC = 105C) Per Device Per Diode IF(AV) Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz) Per Diode IFRM 30 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 200 A Peak Repetitive Reverse Current (2.0 s, 1.0 kHz) Per Diode See Figure 6. IRRM 2.0 A Storage Temperature Range Tstg -65 to +175 C Operating Junction Temperature TJ -65 to +150 C Peak Surge Junction Temperature (Forward Current Applied) TJ(pk) 175 C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s 1 2 3 TO-247 CASE 340L PLASTIC A 30 15 MARKING DIAGRAM B3045 B3045 = Device Code ORDERING INFORMATION Device MBR3045WT Package Shipping TO-247 30 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 1 241 Publication Order Number: MBR3045WT/D MBR3045WT THERMAL CHARACTERISTICS (Per Diode) Rating Thermal Resistance -- Junction to Case -- Junction to Ambient Symbol Max Unit RJC RJA 1.4 40 C/W ELECTRICAL CHARACTERISTICS (Per Diode) Instantaneous Forward Voltage (Note 1.) (iF = 20 Amps, TC = 125C) (iF = 30 Amps, TC = 125C) (iF = 30 Amps, TC = 25C) vF Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 125C) (Rated dc Voltage, TC = 25C) iR Volts 0.6 0.72 0.76 mA 100 1.0 -# "+ +/+,.++'-B > "',-'-'(.,(+0+.++'-&), 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. -# K "',-'-'(., (+0+ /(%- /(%-, /+ +/+, /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current http://onsemi.com 242 " " )$ R+,",-"/R%( / ,*.+ 0/ 98 " )"-"/R%( )$ " / - , -&)+-.+ )/ /+ (+0+)(0+",,")-"('0--, "/ /+ (+0+.++'-&), MBR3045WT " )"-"/R%( )$ " ,"' 0/ +,",-"/ %( / ,*.+ 0/ 98 -# Figure 3. Current Derating (Per Leg) "/ /+ (+0+ .++'- &), Figure 4. Forward Power Dissipation (Per Leg) / B98 @ / )"-'E / /98 .- ' H @!O .++'&)%"-. #., &), /+ +/+, /(%- /(%-, Figure 5. Capacitance +(' ' +(' ' Figure 6. Test Circuit for Repetitive Reverse Current http://onsemi.com 243 " " &+155-: 18(3 (&5,),(3 TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. * * * * * Highly Stable Oxide Passivated Junction Guardring for Over-Voltage Protection Low Forward Voltage Drop Monolithic Dual Die Construction. May Be Paralleled for High Current Output. Full Electrical Isolation without Additional Hardware http://onsemi.com SCHOTTKY BARRIER RECTIFIER 40 AMPERES 15 VOLTS Mechanical Characteristics: * * * * * * * Case: Molded Epoxy Epoxy Meets UL94, VO at 1/8 Weight: 4.3 grams (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped in 30 Units Per Plastic Tube Marking: B4015L 1 2 TO-247 CASE 340L STYLE 2 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol Value Unit VRRM VRWM VR 15 V Average Rectified Forward Current (At Rated VR, TC = 95C) Per Leg Per Package IO Peak Repetitive Forward Current, (At Rated VR, Square Wave, Per Leg 20 kHz, TC = 95C) IFRM 40 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Per Package IFSM 120 A Storage/Operating Case Temperature Tstg, TC -55 to +100 C TJ -55 to +100 C dv/dt 10,000 V/s Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25C) Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 4 3 MARKING DIAGRAM A B4015L 20 40 B4015L = Device Code 244 ORDERING INFORMATION Device Package Shipping MBR4015LWT TO-247 30 Units/Rail Publication Order Number: MBR4015LWT/D MBR4015LWT THERMAL CHARACTERISTICS Rating Thermal Resistance -- Junction-to-Case -- Junction-to-Ambient Symbol Value Unit Per Leg Per Leg RJC RJA 0.57 55 C/W Per Leg VF ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1.), See Figure 2. TJ = 25C TJ = 100C 0.42 0.50 0.36 0.48 TJ = 25C TJ = 100C 5.0 2.7 530 370 (IF = 20 A) (IF = 40 A) Maximum Instantaneous Reverse Current (Note 1.), See Figure 4. IR Per Leg (VR = 15 V) (VR = 7.5 V) V mA ""',-'-'(.,(+0+.++'-&), ""',-'-'(.,(+0+.++'-&), 1. Pulse Test: Pulse Width 250 s, Duty Cycle 2%. -# -# -# -# Figure 1. Typical Forward Voltage Per Leg Figure 2. Maximum Forward Voltage Per Leg " +&1"&.&+/+,.++'-&), " ++/+,.++'-&), -# / &1"&.& "',-'-'(., (+0+ /(%- /(%-, -# -# -# / "',-'-'(., (+0+ /(%- /(%-, -# /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 3. Typical Reverse Current Per Leg Figure 4. Maximum Reverse Current Per Leg http://onsemi.com 245 )( /+ )(0+",,")-"('0--, +* @!O 98 ,*.+ 0/ "E@ "D "E@ "D "E@ "D "E@ "D )"-'E "E@ "D ,*.+ 0/ 98 "E@ "D "E@ "D Figure 5. Current Derating Per Leg Figure 6. Forward Power Dissipation Per Leg -# "E@ "D "( /+ (+0+ .++'- &), -% % -&)+-.+ -# +-()+-"' -&)+-.+ " ( /+ (+0+.++'-&), MBR4015LWT +I?6 0 0 0 0 /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 7. Capacitance Per Leg Figure 8. Typical Operating Temperature Derating Per Leg* * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ = TJmax - r(t)(Pf + Pr) where TJ may be calculated from the equation: r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax - r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. http://onsemi.com 246 + - -+',"'--!+&%+,",-''(+&%"3 MBR4015LWT +I?AI +I?AGI - -"& H + - -+',"'--!+&%+,",-''(+&%"3 Figure 9. Thermal Response Junction to Lead (Per Leg) +I?AI +I?AGI - -"& H Figure 10. Thermal Response Junction to Ambient (Per Leg) http://onsemi.com 247 " " 18(3 (&5,),(3 The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com * Dual Diode Construction -- Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating SCHOTTKY BARRIER RECTIFIER 40 AMPERES 45 VOLTS * 45 Volt Blocking Voltage * Low Forward Voltage Drop * Guardring for Stress Protection and High dv/dt Capability * (> 10 V/ns) 150C Operating Junction Temperature Mechanical Characteristics * Case: Epoxy, Molded * Weight: 4.3 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds * Shipped 30 Units Per Plastic Tube * Marking: B4045 1 2 MAXIMUM RATINGS Rating 3 Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V TO-247AC CASE 340L STYLE 2 Average Rectified Forward Current (Rated VR, TC = 125C) Per Diode Per Device IF(AV) A MARKING DIAGRAM Peak Repetitive Forward Current, (Rated VR, Square Wave, Per Diode 20 kHz, TC = 90C) IFRM Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 400 A Peak Repetitive Reverse Current (2.0 s, 1.0 kHz) IRRM 2.0 A Storage Temperature Range Tstg -65 to +175 C Operating Junction Temperature TJ -65 to +150 C Peak Surge Junction Temperature (Forward Current Applied) TJ(pk) 175 C Voltage Rate of Change dv/dt 10,000 V/s 20 40 40 A B4045 B4045 = Device Code ORDERING INFORMATION Device MBR4045WT Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 4 248 Package Shipping TO-247 30 Units/Rail Publication Order Number: MBR4045WT/D MBR4045WT THERMAL CHARACTERISTICS (Per Diode) Rating Thermal Resistance -- Junction to Case Symbol Max Unit RJC 1.4 C/W ELECTRICAL CHARACTERISTICS (Per Diode) Instantaneous Forward Voltage (Note 1.) @ IF = 20 Amps, TC = 25C @ IF = 20 Amps, TC = 125C @ IF = 40 Amps, TC = 25C @ IF = 40 Amps, TC = 125C VF Instantaneous Reverse Current (Note 1.) @ Rated DC Voltage, TC = 25C @ Rated DC Voltage, TC = 100C IR Volts 0.70 0.60 0.80 0.75 mA 1.0 50 1. Pulse Test: Pulse Width = 300 s, Duty Cycle < 2.0% TYPICAL ELECTRICAL CHARACTERISTICS " ++/+,.++'-B > "',-'-'(.,(+0+.++'-&), - - - - - - K "',-'-'(., (+0+ /(%- B/ )"-'E /+ +/+, /(%- /(%-, Figure 2. Typical Reverse Current " //+ (+0+.++'-&), Figure 1. Typical Forward Voltage /+ +/+, /(%- /(%-, ,*.+ 0/ /+ / Figure 3. Typical Capacitance Per Leg - , -&)+-.+ Figure 4. Current Derating Per Leg http://onsemi.com 249 " " 18(3 (&5,),(3 The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com * Dual Diode Construction -- Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating SCHOTTKY BARRIER RECTIFIER 60 AMPERES 45 VOLTS * 45 Volt Blocking Voltage * Low Forward Voltage Drop * Guardring for Stress Protection and High dv/dt Capability * (> 10 V/ns) 150C Operating Junction Temperature Mechanical Characteristics * Case: Epoxy, Molded * Weight: 4.3 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds * Shipped 30 Units Per Plastic Tube * Marking: B6045 1 2 MAXIMUM RATINGS Rating Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR, TC = 125C) Per Diode Per Device IF(AV) Peak Repetitive Forward Current, (Rated VR, Square Wave, Per Diode 20 kHz, TC = 90C) IFRM Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 500 A Peak Repetitive Reverse Current (2.0 s, 1.0 kHz) IRRM 2.0 A Storage Temperature Range Tstg -65 to +175 C Operating Junction Temperature TJ -65 to +150 C Peak Surge Junction Temperature (Forward Current Applied) TJ(pk) 175 C Voltage Rate of Change dv/dt 10,000 V/s Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 4 3 TO-247AC CASE 340L STYLE 2 MARKING DIAGRAM A 30 60 60 A B6045 B6045 = Device Code ORDERING INFORMATION Device 250 MBR6045WT Package Shipping TO-247 30 Units/Rail Publication Order Number: MBR6045WT/D MBR6045WT THERMAL CHARACTERISTICS (Per Diode) Rating Thermal Resistance -- Junction to Case Symbol Max Unit RJC 1.0 C/W ELECTRICAL CHARACTERISTICS (Per Diode) Instantaneous Forward Voltage (Note 1.) @ IF = 30 Amps, TC = 25C @ IF = 30 Amps, TC = 125C @ IF = 60 Amps, TC = 25C VF Instantaneous Reverse Current (Note 1.) @ Rated DC Voltage, TC = 25C @ Rated DC Voltage, TC = 100C IR Volts 0.62 0.55 0.75 mA 1.0 50 1. Pulse Test: Pulse Width = 300 s, Duty Cycle < 2.0% " ++/+,.++'-B - - > "',-'-'(.,(+0+.++'-&), TYPICAL ELECTRICAL CHARACTERISTICS - /+ +/+, /(%- /(%-, Figure 1. Typical Reverse Current - K "',-'-'(., (+0+ /(%- B/ Figure 2. Typical Forward Voltage http://onsemi.com 251 Preferred Device " " 18(3 (&5,),(3 The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com * Dual Diode Construction -- * * * * * * May Be Paralleled for Higher Current Output Guardring for Stress Protection Low Forward Voltage Drop 150C Operating Junction Temperature Recyclable Epoxy Guaranteed Reverse Avalanche Energy Capability Improved Mechanical Ratings LOW VF SCHOTTKY BARRIER RECTIFIER 200 AMPERES 30 VOLTS Mechanical Characteristics * * * * * * * Case: Epoxy, Molded with metal heatsink base Weight: 80 grams (approximately) Finish: All External Surfaces Corrosion Resistant Top Terminal Torque: 25-40 lb-in max Base Plate Torques: See procedure given in the Package Outline Section Shipped 25 units per foam Marking: B20030L MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 30 V Average Rectified Forward Current (At Rated VR, TC = 125C) Per Leg Per Device IF(AV) Peak Repetitive Forward Current, (At Rated VR, Square Wave, 20 kHz, TC = 100C) IFRM Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 2.0 A Storage Temperature Range Tstg -55 to +150 C TJ -55 to +150 C dv/dt 10,000 V/s Operating Junction Temperature Voltage Rate of Change (Rated VR) Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 3 POWERTAP II CASE 357C PLASTIC MARKING DIAGRAM A 100 200 YYWW 200 B20030L A 1500 B20030L = Device Code YY = Year WW = Work Week A ORDERING INFORMATION 252 Device Package Shipping MBRP20030CTL POWERTAP II 25 Units/Tray Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MBRP20030CTL/D MBRP20030CTL THERMAL CHARACTERISTICS Rating Thermal Resistance -- Junction to Case Symbol Value Unit RJC 0.45 C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1.) (IF = 200 Amps, TC = +125C) (IF = 200 Amps, TC = +25C) VF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = +25C) IR Volts 0.52 0.60 5.0 mA 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. MAXIMUM MECHANICAL RATINGS POWERTAP MECHANICAL DATA APPLIES OVER OPERATING TEMPERATURE Terminal Penetration: 0.235 max Terminal Torque: 25-40 in-lb max Mounting Torque -- Outside Holes: 30-40 in-lb max Mounting Torque -- Center Hole: 8-10 in-lb max Seating Plane Flatness 1 mil per in. (between mounting holes) 2 Vertical Pull 250 lbs. max 2 in. Lever Pull 50 lbs. max Note: While the POWERTAP is capable of sustaining these vertical and levered tensions, the intimate contact Note: between POWERTAP and heat sink may be lost. This could lead to thermal runaway. The use of very Note: flexible leads is recommended for the anode connections. Use of thermal grease is highly recommended. http://onsemi.com 253 MBRP20030CTL MOUNTING PROCEDURE The POWERTAP package requires special mounting considerations because of the long longitudinal axis of the copper heat sink. It is important to follow the proper tightening sequence to avoid warping the heat sink, which can reduce thermal contact between the POWERTAP and heat sink. STEP 1: Locate the POWERTAP on the heat sink and start mounting bolts into the threads by hand (2 or 3 turns). 2-3 TURNS 2-3 TURNS POWER TAP HEAT SINK 2-3 TURNS STEP 2: Finger tighten the center bolt. The bolt may catch on the threads of the heat sink so it is important to make sure the face of the bolt or washer is in contact with the surface of the POWERTAP. STEP 3: Tighten each of the end bolts between 5 to 10 in-lb. STEP 4: Tighten the center bolt between 8 to 10 in-lb. FINGER-TIGHT TAP HEAT SINK FINGER-TIGHT 5-10 IN-LB POWER TAP HEAT SINK 8-10 IN-LB 5-10 IN-LB 5-10 IN-LB POWER TAP HEAT SINK 8-10 IN-LB 30-40 IN-LB 30-40 IN-LB POWER TAP HEAT SINK http://onsemi.com 254 2-3 TURNS POWER 5-10 IN-LB STEP 5: Finally, tighten the end bolts between 30 to 40 in-lb. 2-3 TURNS Preferred Device " " 18(3 (&5,),(3 The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com * Dual Diode Construction - * * * * * May Be Paralleled for Higher Current Output Guardring for Stress Protection Low Forward Voltage Drop 150C Operating Junction Temperature Recyclable Epoxy Improved Mechanical Ratings LOW VF SCHOTTKY BARRIER RECTIFIER 400 AMPERES 30 VOLTS Mechanical Characteristics * * * * * * * Case: Epoxy, Molded with metal heatsink base Weight: 80 grams (approximately) Finish: All External Surfaces Corrosion Resistant Top Terminal Torque: 25-40 lb-in max Base Plate Torques: See procedure given in the Package Outline Section Shipped 25 units per foam Marking: B40030L MAXIMUM RATINGS Rating Symbol Value Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR Average Rectified Forward Current (At Rated VR, TC = 100C) Per Leg Per Device IF(AV) Peak Repetitive Forward Current, (At Rated VR, Square Wave, 20 kHz, TC = 100C) IFRM Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM Storage Temperature Range Tstg -55 to +150 C Operating Junction Temperature TJ -55 to +150 C dv/dt 10,000 V/s Voltage Rate of Change (Rated VR) Unit POWERTAP II CASE 357C PLASTIC V 30 A 200 400 MARKING DIAGRAM A YYWW B40030L 200 1500 B40030L = Device Code YY = Year WW = Work Week A A ORDERING INFORMATION 2.0 Device Package MBRP40030CTL POWERTAP II Shipping 25 Units/Tray Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 255 Publication Order Number: MBRP40030CTL/D MBRP40030CTL THERMAL CHARACTERISTICS Characteristic Thermal Resistance - Junction to Case (Note 1.) Symbol Value Unit RJC 0.4 C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2.) (iF = 200 Amps, TC = +25C) (iF = 200 Amps, TC = +100C) VF Maximum Instantaneous Reverse Current (Note 2.) (Rated dc Voltage, TC = +25C) (Rated dc Voltage, TC = +100C) IR Volts 0.5 0.41 mA 20 1000 -# -# -# K "',-'-'(., (+0+ /(%- /(%-, " "',-'-'(.,(+0+.++'-&), > "',-'-'(.,(+0+.++'-&), 1. Rating applies when surface mounted on the minimum pad size recommended. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. Figure 1. Typical Instantaneous Forward Voltage -# -# -# / &1"&.& "',-'-'(., (+0+ /(%- /(%-, Figure 2. Maximum Instantaneous Forward Voltage http://onsemi.com 256 " + &1"&.&+/+,.++'-&), " + +/+,.++'-&), MBRP40030CTL -# -# -# /+ +/+, /(%- /(%-, -# -# Figure 3. Typical Reverse Current -# /+ +/+, /(%- /(%-, Figure 4. Maximum Reverse Current )"-'E /+ +/+, /(%- /(%-, Figure 5. Typical Capacitance http://onsemi.com 257 MBRP40030CTL MAXIMUM MECHANICAL RATINGS POWERTAP MECHANICAL DATA APPLIES OVER OPERATING TEMPERATURE Terminal Penetration: 0.235 max Terminal Torque: 25-40 in-lb max Mounting Torque - Outside Holes: 30-40 in-lb max Mounting Torque - Center Hole: 8-10 in-lb max Seating Plane Flatness 1 mil per in. (between mounting holes) Vertical Pull 250 lbs. max 2 in. Lever Pull 50 lbs. max Note: While the POWERTAP is capable of sustaining these vertical and levered tensions, the intimate contact Note: between POWERTAP and heat sink may be lost. This could lead to thermal runaway. The use of very Note: flexible leads is recommended for the anode connections. Use of thermal grease is highly recommended. MOUNTING PROCEDURE The POWERTAP package requires special mounting considerations because of the long longitudinal axis of the copper heat sink. It is important to follow the proper tightening sequence to avoid warping the heat sink, which can reduce thermal contact between the POWERTAP and heat sink. STEP 1: Locate the POWERTAP on the heat sink and start mounting bolts into the threads by hand (2 or 3 turns). 2-3 TURNS 2-3 TURNS POWER TAP HEAT SINK 2-3 TURNS STEP 2: Finger tighten the center bolt. The bolt may catch on the threads of the heat sink so it is important to make sure the face of the bolt or washer is in contact with the surface of the POWERTAP. STEP 3: Tighten each of the end bolts between 5 to 10 in-lb. STEP 4: Tighten the center bolt between 8 to 10 in-lb. FINGER-TIGHT TAP HEAT SINK FINGER-TIGHT 5-10 IN-LB POWER TAP HEAT SINK 8-10 IN-LB 5-10 IN-LB 5-10 IN-LB POWER TAP HEAT SINK 8-10 IN-LB 30-40 IN-LB 30-40 IN-LB POWER TAP HEAT SINK http://onsemi.com 258 2-3 TURNS POWER 5-10 IN-LB STEP 5: Finally, tighten the end bolts between 30 to 40 in-lb. 2-3 TURNS Preferred Device " " 18(3 (&5,),(3 The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com * Dual Diode Construction -- * * * * * * May Be Paralleled for Higher Current Output Guardring for Stress Protection Low Forward Voltage Drop 150C Operating Junction Temperature Recyclable Epoxy Guaranteed Reverse Avalanche Energy Capability Improved Mechanical Ratings LOW VF SCHOTTKY BARRIER RECTIFIER 600 AMPERES 35 VOLTS Mechanical Characteristics * * * * * * * Case: Epoxy, Molded with metal heatsink base Weight: 80 grams (approximately) Finish: All External Surfaces Corrosion Resistant Top Terminal Torque: 25-40 lb-in max Base Plate Torques: See procedure given in the Package Outline Section Shipped 25 units per foam Marking: B60035L MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 35 V Average Rectified Forward Current (At Rated VR, TC = 100C) Per Leg Per Device IF(AV) Peak Repetitive Forward Current, (At Rated VR, Square Wave, 20 kHz, TC = 100C) IFRM Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 4000 A Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 2.0 A Storage Temperature Range Tstg -55 to +150 C Operating Junction Temperature TJ -55 to +150 C dv/dt 10,000 V/s Voltage Rate of Change (Rated VR) Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 4 POWERTAP II CASE 357C PLASTIC MARKING DIAGRAM A 300 600 YYWW 300 B60035L A B60035L = Device Code YY = Year WW = Work Week ORDERING INFORMATION 259 Device Package Shipping MBRP60035CTL POWERTAP II 25 Units/Tray Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MBRP60035CTL/D MBRP60035CTL THERMAL CHARACTERISTICS Rating Thermal Resistance -- Junction to Case Symbol Value Unit RJC 0.4 C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1.) (iF = 300 Amps, TC = +25C) (iF = 300 Amps, TC = +100C) VF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = +25C) (Rated dc Voltage, TC = +100C) IR Volts 0.57 0.50 mA 10 250 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. MAXIMUM MECHANICAL RATINGS POWERTAP MECHANICAL DATA APPLIES OVER OPERATING TEMPERATURE Terminal Penetration: 0.235 max Terminal Torque: 25-40 in-lb max Mounting Torque -- Outside Holes: 30-40 in-lb max Mounting Torque -- Center Hole: 8-10 in-lb max Seating Plane Flatness 1 mil per in. (between mounting holes) 2 Vertical Pull 250 lbs. max 2 in. Lever Pull 50 lbs. max Note: While the POWERTAP is capable of sustaining these vertical and levered tensions, the intimate contact Note: between POWERTAP and heat sink may be lost. This could lead to thermal runaway. The use of very Note: flexible leads is recommended for the anode connections. Use of thermal grease is highly recommended. http://onsemi.com 260 MBRP60035CTL MOUNTING PROCEDURE The POWERTAP package requires special mounting considerations because of the long longitudinal axis of the copper heat sink. It is important to follow the proper tightening sequence to avoid warping the heat sink, which can reduce thermal contact between the POWERTAP and heat sink. STEP 1: Locate the POWERTAP on the heat sink and start mounting bolts into the threads by hand (2 or 3 turns). 2-3 TURNS 2-3 TURNS POWER TAP HEAT SINK 2-3 TURNS STEP 2: Finger tighten the center bolt. The bolt may catch on the threads of the heat sink so it is important to make sure the face of the bolt or washer is in contact with the surface of the POWERTAP. STEP 3: Tighten each of the end bolts between 5 to 10 in-lb. STEP 4: Tighten the center bolt between 8 to 10 in-lb. FINGER-TIGHT TAP HEAT SINK FINGER-TIGHT 5-10 IN-LB POWER TAP HEAT SINK 8-10 IN-LB 5-10 IN-LB 5-10 IN-LB POWER TAP HEAT SINK 8-10 IN-LB 30-40 IN-LB 30-40 IN-LB POWER TAP HEAT SINK http://onsemi.com 261 2-3 TURNS POWER 5-10 IN-LB STEP 5: Finally, tighten the end bolts between 30 to 40 in-lb. 2-3 TURNS Preferred Device " " 18(3 (&5,),(3 . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: * Dual Diode Construction -- * * * * http://onsemi.com May Be Paralleled for Higher Current Output Guardring for Stress Protection Low Forward Voltage 175C Operating Junction Temperature Guaranteed Reverse Avalanche SCHOTTKY BARRIER RECTIFIER 200 AMPERES 45 VOLTS Mechanical Characteristics: * * * * * * * Case: Epoxy, Molded with metal heatsink base Weight: 80 grams (approximately) Finish: All External Surfaces Corrosion Resistant Top Terminal Torque: 25-40 lb-in max Base Plate Torques: See procedure given in the Package Outline Section Shipped 25 units per foam Marking: B20045T MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR, TC = 140C) Per Leg Per Device IF(AV) Peak Repetitive Forward Current, (Rated VR, Square Wave, Per Leg 20 kHz, TC = 140C) IFRM Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Peak Repetitive Reverse Current (2.0 s, 1.0 kHz) Per Leg IRRM Storage Temperature Range Tstg -55 to +150 C Operating Junction Temperature TJ -55 to +150 C dv/dt 10,000 V/s Voltage Rate of Change (Rated VR) A POWERTAP II CASE 357C PLASTIC A MARKING DIAGRAM 100 200 200 1500 YYWW A B20045T B20045T = Device Code YY = Year WW = Work Week A 2.0 ORDERING INFORMATION Device Package Shipping MBRP20045CT POWERTAP II 25 Units/Tray Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 3 262 Publication Order Number: MBRP20045CT/D MBRP20045CT THERMAL CHARACTERISTICS (Per Leg) Rating Thermal Resistance, Junction to Case Symbol Value Unit RJC 0.6 C/W ELECTRICAL CHARACTERISTICS (Per Leg) Instantaneous Forward Voltage (Note 1.) (iF = 200 Amps, TJ = 25C) (iF = 200 Amps, TJ = 125C) vF Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 125C) (Rated dc Voltage, TJ = 25C) iR Volts 0.89 0.78 mA 50 0.5 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. MAXIMUM MECHANICAL RATINGS POWERTAP MECHANICAL DATA APPLIES OVER OPERATING TEMPERATURE Terminal Penetration: 0.235 max Terminal Torque: 25-40 in-lb max Mounting Torque -- Outside Holes: 30-40 in-lb max Mounting Torque -- Center Hole: 8-10 in-lb max Seating Plane Flatness 1 mil per in. (between mounting holes) 2 Vertical Pull 250 lbs. max 2 in. Lever Pull 50 lbs. max Note: While the POWERTAP is capable of sustaining these vertical and levered tensions, the intimate contact Note: between POWERTAP and heat sink may be lost. This could lead to thermal runaway. The use of very Note: flexible leads is recommended for the anode connections. Use of thermal grease is highly recommended. http://onsemi.com 263 MBRP20045CT MOUNTING PROCEDURE The POWERTAP package requires special mounting considerations because of the long longitudinal axis of the copper heat sink. It is important to follow the proper tightening sequence to avoid warping the heat sink, which can reduce thermal contact between the POWERTAP and heat sink. STEP 1: Locate the POWERTAP on the heat sink and start mounting bolts into the threads by hand (2 or 3 turns). 2-3 TURNS 2-3 TURNS POWER TAP HEAT SINK 2-3 TURNS STEP 2: Finger tighten the center bolt. The bolt may catch on the threads of the heat sink so it is important to make sure the face of the bolt or washer is in contact with the surface of the POWERTAP. STEP 3: Tighten each of the end bolts between 5 to 10 in-lb. STEP 4: Tighten the center bolt between 8 to 10 in-lb. FINGER-TIGHT TAP HEAT SINK FINGER-TIGHT 5-10 IN-LB POWER TAP HEAT SINK 8-10 IN-LB 5-10 IN-LB 5-10 IN-LB POWER TAP HEAT SINK 8-10 IN-LB 30-40 IN-LB 30-40 IN-LB POWER TAP HEAT SINK http://onsemi.com 264 2-3 TURNS POWER 5-10 IN-LB STEP 5: Finally, tighten the end bolts between 30 to 40 in-lb. 2-3 TURNS Preferred Device " " 18(3 (&5,),(3 . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: * Dual Diode Construction -- May Be Paralleled for Higher Current Output * Guardring for Stress Protection * Low Forward Voltage * 175C Operating Junction Temperature * Guaranteed Reverse Avalanche Mechanical Characteristics: * * * * * * * Case: Epoxy, Molded with metal heatsink base Weight: 80 grams (approximately) Finish: All External Surfaces Corrosion Resistant Top Terminal Torque: 25-40 lb-in max Base Plate Torques: See procedure given in the Package Outline Section Shipped 25 units per foam Marking: B30045T http://onsemi.com SCHOTTKY BARRIER RECTIFIER 300 AMPERES 45 VOLTS MAXIMUM RATINGS Rating Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR Average Rectified Forward Current (Rated VR, TC = 140C) Per Leg Per Device IF(AV) Peak Repetitive Forward Current, (Rated VR, Square Wave, Per Leg 20 kHz, TC = 140C) IFRM Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Per Leg IFSM Peak Repetitive Reverse Current (2.0 s, 1.0 kHz) Per Leg IRRM Storage Temperature Range Tstg -55 to +150 C Operating Junction Temperature TJ -55 to +150 C dv/dt 10,000 V/s Voltage Rate of Change (Rated VR) V A POWERTAP II CASE 357C PLASTIC A MARKING DIAGRAM 45 150 300 300 2500 YYWW A B30045T B30045T = Device Code YY = Year WW = Work Week A 2.0 ORDERING INFORMATION Device Package Shipping MBRP30045CT POWERTAP II 25 Units/Tray Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 3 265 Publication Order Number: MBRP30045CT/D MBRP30045CT THERMAL CHARACTERISTICS (Per Leg) Rating Thermal Resistance, Junction to Case Symbol Value Unit RJC 0.45 C/W ELECTRICAL CHARACTERISTICS (Per Leg) Instantaneous Forward Voltage (Note 1.) (iF = 150 Amps, TJ = 25C) (iF = 300 Amps, TJ = 25C) vF Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 125C) (Rated dc Voltage, TJ = 25C) iR Volts 0.70 0.82 mA 75 0.8 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. MAXIMUM MECHANICAL RATINGS POWERTAP MECHANICAL DATA APPLIES OVER OPERATING TEMPERATURE Terminal Penetration: 0.235 max Terminal Torque: 25-40 in-lb max Mounting Torque -- Outside Holes: 30-40 in-lb max Mounting Torque -- Center Hole: 8-10 in-lb max Seating Plane Flatness 1 mil per in. (between mounting holes) 2 Vertical Pull 250 lbs. max 2 in. Lever Pull 50 lbs. max Note: While the POWERTAP is capable of sustaining these vertical and levered tensions, the intimate contact Note: between POWERTAP and heat sink may be lost. This could lead to thermal runaway. The use of very Note: flexible leads is recommended for the anode connections. Use of thermal grease is highly recommended. http://onsemi.com 266 MBRP30045CT MOUNTING PROCEDURE The POWERTAP package requires special mounting considerations because of the long longitudinal axis of the copper heat sink. It is important to follow the proper tightening sequence to avoid warping the heat sink, which can reduce thermal contact between the POWERTAP and heat sink. STEP 1: Locate the POWERTAP on the heat sink and start mounting bolts into the threads by hand (2 or 3 turns). 2-3 TURNS 2-3 TURNS POWER TAP HEAT SINK 2-3 TURNS STEP 2: Finger tighten the center bolt. The bolt may catch on the threads of the heat sink so it is important to make sure the face of the bolt or washer is in contact with the surface of the POWERTAP. STEP 3: Tighten each of the end bolts between 5 to 10 in-lb. STEP 4: Tighten the center bolt between 8 to 10 in-lb. FINGER-TIGHT TAP HEAT SINK FINGER-TIGHT 5-10 IN-LB POWER TAP HEAT SINK 8-10 IN-LB 5-10 IN-LB 5-10 IN-LB POWER TAP HEAT SINK 8-10 IN-LB 30-40 IN-LB 30-40 IN-LB POWER TAP HEAT SINK http://onsemi.com 267 2-3 TURNS POWER 5-10 IN-LB STEP 5: Finally, tighten the end bolts between 30 to 40 in-lb. 2-3 TURNS " " 18(3 (&5,),(3 . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: Features: * Dual Diode Construction -- * * * * * * http://onsemi.com May be Paralleled for Higher Current Output Guardring for Stress Protection Low Forward Voltage Drop 150C Operating Junction Temperature Recyclable Epoxy Guaranteed Reverse Avalanche Energy Capability Improved Mechanical Ratings SCHOTTKY BARRIER RECTIFIER 400 AMPERES 45 VOLTS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (At Rated VR, TC = 100C) Per Leg Per Device IF(AV) Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 100C) IFRM 400 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 2500 A POWERTAP II CASE 357C PLASTIC Peak Repetitive Reverse Current (2.0 s, 1.0 kHz) IRRM 2.0 A MARKING DIAGRAM Tstg, TC -55 to +150 C Storage and Operating Case Temperature Range Operating Junction Temperature Voltage Rate of Change (Rated VR) A 200 400 YYWW TJ -55 to +150 C dv/dt 1000 V/s B40045L B40045L = Device Code YY = Year WW = Work Week ORDERING INFORMATION Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 1 268 Device Package Shipping MBRP40045CTL POWERTAP II 25 Units/Tray Publication Order Number: MBRP40045CTL/D MBRP40045CTL THERMAL CHARACTERISTICS Rating Thermal Resistance -- Junction-to-Case Symbol Value Unit RJC 0.45 C/W Per Leg ELECTRICAL CHARACTERISTICS Rating Symbol Maximum Instantaneous Forward Voltage (Note 1.) Value VF Per Leg TC = 25C TC = 125C 0.57 0.73 0.52 0.68 TC = 25C TC = 125C 10 400 (IF = 200 A) (IF = 400 A) Maximum Instantaneous Reverse Current (Note 1.) IR Per Leg Unit (Rated DC Voltage) V mA 1. Pulse Test: Pulse Width = 380 s, Duty Cycle 2%. "++/+,.++'-&), ""',-'-'(.,(+0+.++'-&), -# -# / "',-'-'(., (+0+ /(%- /(%-, /+ +/+, /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current http://onsemi.com 269 Preferred Device " " 18(3 (&5,),(3 . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: * Dual Diode Construction -- * * * http://onsemi.com May Be Paralleled for Higher Current Output Guardring for Stress Protection Low Forward Voltage 175C Operating Junction Temperature SCHOTTKY BARRIER RECTIFIER 200 AMPERES 60 VOLTS Mechanical Characteristics: * * * * * * * Case: Epoxy, Molded with metal heatsink base Weight: 80 grams (approximately) Finish: All External Surfaces Corrosion Resistant Top Terminal Torque: 25-40 lb-in max Base Plate Torques: See procedure given in the Package Outline Section Shipped 25 units per foam Marking: B20060T MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 60 V Average Rectified Forward Current (Rated VR, TC = 140C) Per Leg Per Device IF(AV) Peak Repetitive Forward Current, (Rated VR, Square Wave, Per Leg 20 kHz, TC = 140C) IFRM Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Peak Repetitive Reverse Current (2.0 s, 1.0 kHz) Per Leg IRRM Storage Temperature Range Tstg -55 to +150 C Operating Junction Temperature TJ -55 to +150 C dv/dt 10,000 V/s Voltage Rate of Change (Rated VR) POWERTAP II CASE 357C PLASTIC A 100 200 A MARKING DIAGRAM 200 1500 A YYWW B20060T B20060T = Device Code YY = Year WW = Work Week A 2.0 ORDERING INFORMATION Device Package Shipping MBRP20060CT POWERTAP II 25 Units/Tray Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 0 270 Publication Order Number: MBRP20060CT/D MBRP20060CT THERMAL CHARACTERISTICS (Per Leg) Rating Thermal Resistance, Junction to Case Symbol Value Unit RJC 0.6 C/W ELECTRICAL CHARACTERISTICS (Per Leg) Instantaneous Forward Voltage (Note 1.) (iF = 200 Amps, TJ = 25C) (iF = 200 Amps, TJ = 100C) vF Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 125C) (Rated dc Voltage, TJ = 25C) iR Volts 0.91 0.80 mA 50 0.5 -# / "',-'-'(., (+0+ /(%- /(%-, " "',-'-'(.,(+0+.++'-&), " "',-'-'(.,(+0+.++'-&), 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. -# / &1"&.& "',-'-'(., (+0+ /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage http://onsemi.com 271 MBRP20060CT " + &1"&.&+/+,.++'-&), " + +/+,.++'-&), -# /+ +/+, /(%- /(%-, " ( /+ (+0+.++'-&), 98 +* @!O ,*.+ 0/ "E@ "D "E@ "D "E@ "D "E@ "D - , -&)+-.+ /+ +/+, /(%- /(%-, Figure 4. Maximum Reverse Current ) ( /+ )(0+",,")-"('0--, Figure 3. Typical Reverse Current 98 ,*.+ 0/ "E@ "D "E@ "D "E@ "D "E@ "D -# Figure 5. Current Derating (PER LEG) "( /+ (+0+ .++'- &), Figure 6. Forward Power Dissipation (PER LEG) http://onsemi.com 272 MBRP20060CT )"-'E -# /+ +/+, /(%- /(%-, +- -+',"'--!+&%+,",-''(+&%"3 Figure 7. Capacitance +I?8I +I?8GI - -"& H Figure 8. Thermal Response / /98 @ / H @!O / B98 .- ' .++'&)%"-. #., Q &), +(' ' +(' ' Figure 9. Test Circuit for Repetitive Reverse Current http://onsemi.com 273 MBRP20060CT MAXIMUM MECHANICAL RATINGS POWERTAP MECHANICAL DATA APPLIES OVER OPERATING TEMPERATURE Terminal Penetration: 0.235 max Terminal Torque: 25-40 in-lb max Mounting Torque -- Outside Holes: 30-40 in-lb max Mounting Torque -- Center Hole: 8-10 in-lb max Seating Plane Flatness 1 mil per in. (between mounting holes) 2 Vertical Pull 250 lbs. max 2 in. Lever Pull 50 lbs. max Note: While the POWERTAP is capable of sustaining these vertical and levered tensions, the intimate contact Note: between POWERTAP and heat sink may be lost. This could lead to thermal runaway. The use of very Note: flexible leads is recommended for the anode connections. Use of thermal grease is highly recommended. MOUNTING PROCEDURE The POWERTAP package requires special mounting considerations because of the long longitudinal axis of the copper heat sink. It is important to follow the proper tightening sequence to avoid warping the heat sink, which can reduce thermal contact between the POWERTAP and heat sink. STEP 1: Locate the POWERTAP on the heat sink and start mounting bolts into the threads by hand (2 or 3 turns). 2-3 TURNS 2-3 TURNS POWER TAP HEAT SINK 2-3 TURNS STEP 2: Finger tighten the center bolt. The bolt may catch on the threads of the heat sink so it is important to make sure the face of the bolt or washer is in contact with the surface of the POWERTAP. STEP 3: Tighten each of the end bolts between 5 to 10 in-lb. STEP 4: Tighten the center bolt between 8 to 10 in-lb. FINGER-TIGHT TAP HEAT SINK FINGER-TIGHT 5-10 IN-LB POWER TAP HEAT SINK 8-10 IN-LB 5-10 IN-LB 5-10 IN-LB POWER TAP HEAT SINK 8-10 IN-LB 30-40 IN-LB 30-40 IN-LB POWER TAP HEAT SINK http://onsemi.com 274 2-3 TURNS POWER 5-10 IN-LB STEP 5: Finally, tighten the end bolts between 30 to 40 in-lb. 2-3 TURNS Preferred Device " " 18(3 (&5,),(3 . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: * Dual Diode Construction -- May Be Paralleled for Higher Current Output * Guardring for Stress Protection * Low Forward Voltage * 175C Operating Junction Temperature Mechanical Characteristics: * * * * * * * Case: Epoxy, Molded with metal heatsink base Weight: 80 grams (approximately) Finish: All External Surfaces Corrosion Resistant Top Terminal Torque: 25-40 lb-in max Base Plate Torques: See procedure given in the Package Outline Section Shipped 25 units per foam Marking: B30060T http://onsemi.com SCHOTTKY BARRIER RECTIFIER 300 AMPERES 60 VOLTS MAXIMUM RATINGS Rating Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 60 V Average Rectified Forward Current (Rated VR, TC = 140C) Per Leg Per Device IF(AV) Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 140C) Per Leg IFRM Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Per Leg IFSM Peak Repetitive Reverse Current (2.0 s, 1.0 kHz) Per Leg IRRM Storage Temperature Range Tstg -55 to +150 TJ -55 to +150 C dv/dt 10,000 V/s Operating Junction Temperature Voltage Rate of Change (Rated VR) POWERTAP II CASE 357C PLASTIC A 150 300 A MARKING DIAGRAM 300 2500 A YYWW B30060T B30060T = Device Code YY = Year WW = Work Week A 2.0 C ORDERING INFORMATION Device Package Shipping MBRP30060CT POWERTAP II 25 Units/Tray Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 1 275 Publication Order Number: MBRP30060CT/D MBRP30060CT THERMAL CHARACTERISTICS (Per Leg) Rating Thermal Resistance, Junction to Case Symbol Value Unit RJC 0.45 C/W ELECTRICAL CHARACTERISTICS (Per Leg) Instantaneous Forward Voltage (Note 1.) (iF = 150 Amps, TJ = 25C) (iF = 300 Amps, TJ = 25C) vF Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 125C) (Rated dc Voltage, TJ = 25C) iR Volts 0.79 0.89 mA 75 0.8 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. MAXIMUM MECHANICAL RATINGS POWERTAP MECHANICAL DATA APPLIES OVER OPERATING TEMPERATURE Terminal Penetration: 0.235 max Terminal Torque: 25-40 in-lb max Mounting Torque -- Outside Holes: 30-40 in-lb max Mounting Torque -- Center Hole: 8-10 in-lb max Seating Plane Flatness 1 mil per in. (between mounting holes) 2 Vertical Pull 250 lbs. max 2 in. Lever Pull 50 lbs. max Note: While the POWERTAP is capable of sustaining these vertical and levered tensions, the intimate contact Note: between POWERTAP and heat sink may be lost. This could lead to thermal runaway. The use of very Note: flexible leads is recommended for the anode connections. Use of thermal grease is highly recommended. http://onsemi.com 276 MBRP30060CT MOUNTING PROCEDURE The POWERTAP package requires special mounting considerations because of the long longitudinal axis of the copper heat sink. It is important to follow the proper tightening sequence to avoid warping the heat sink, which can reduce thermal contact between the POWERTAP and heat sink. STEP 1: Locate the POWERTAP on the heat sink and start mounting bolts into the threads by hand (2 or 3 turns). 2-3 TURNS 2-3 TURNS POWER TAP HEAT SINK 2-3 TURNS STEP 2: Finger tighten the center bolt. The bolt may catch on the threads of the heat sink so it is important to make sure the face of the bolt or washer is in contact with the surface of the POWERTAP. STEP 3: Tighten each of the end bolts between 5 to 10 in-lb. STEP 4: Tighten the center bolt between 8 to 10 in-lb. FINGER-TIGHT TAP HEAT SINK FINGER-TIGHT 5-10 IN-LB POWER TAP HEAT SINK 8-10 IN-LB 5-10 IN-LB 5-10 IN-LB POWER TAP HEAT SINK 8-10 IN-LB 30-40 IN-LB 30-40 IN-LB POWER TAP HEAT SINK http://onsemi.com 277 2-3 TURNS POWER 5-10 IN-LB STEP 5: Finally, tighten the end bolts between 30 to 40 in-lb. 2-3 TURNS " " 18(3 (&5,),(3 . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: Features: * Dual Diode Construction -- * * * * * * http://onsemi.com May be Paralleled for Higher Current Output Guardring for Stress Protection Low Forward Voltage Drop 150C Operating Junction Temperature Recyclable Epoxy Guaranteed Reverse Avalanche Energy Capability Improved Mechanical Ratings SCHOTTKY BARRIER RECTIFIER 400 AMPERES 100 VOLTS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current (At Rated VR, TC = 100C) Per Leg Per Device IF(AV) Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 100C) IFRM 400 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 2500 A POWERTAP II CASE 357C PLASTIC Peak Repetitive Reverse Current (2.0 s, 1.0 kHz) IRRM 2.0 A MARKING DIAGRAM Tstg, TC -55 to +150 C Storage and Operating Case Temperature Range Operating Junction Temperature Voltage Rate of Change (Rated VR) A 200 400 YYWW TJ -55 to +150 C dv/dt 1000 V/s B400100L B400100L = Device Code YY = Year WW = Work Week ORDERING INFORMATION Device Package MBRP400100CTL POWERTAP II Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 1 278 Shipping 25 Units/Tray Publication Order Number: MBRP400100CTL/D MBRP400100CTL THERMAL CHARACTERISTICS Rating Thermal Resistance -- Junction-to-Case Symbol Value Unit RJC 0.45 C/W Per Leg ELECTRICAL CHARACTERISTICS Rating Symbol Maximum Instantaneous Forward Voltage (Note 1.) Value VF Per Leg TC = 25C TC = 125C 0.83 0.97 0.69 0.82 TC = 25C TC = 125C 6.0 80 (IF = 200 A) (IF = 400 A) Maximum Instantaneous Reverse Current (Note 1.) IR Per Leg Unit (Rated DC Voltage) V mA 1. Pulse Test: Pulse Width = 380 s, Duty Cycle 2%. -# "++/+,.++'-&), ""',-'-'(.,(+0+.++'-&), -# / "',-'-'(., (+0+ /(%- /(%-, /+ +/+, /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current http://onsemi.com 279 " &+155-: 18(3 (&5,),(3 POWERTAP III Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes. * * * * Very Low Forward Voltage Drop Highly Stable Oxide Passivated Junction Guardring for Stress Protection High dv/dt Capability http://onsemi.com SCHOTTKY BARRIER RECTIFIER 200 AMPERES 35 VOLTS Mechanical Characteristics: * * * * * * * * Dual Die Construction Case: Epoxy, Molded with Plated Copper Heatsink Base Weight: 40 grams (approximately) Finish: All External Surfaces Corrosion Resistant Base Plate Torques: See procedure given in the Package Outline Section Top Terminal Torque: 25-40 lb-in max. Shipped 50 units per foam Marking: MBRP20035L POWERTAP III CASE 357D PLASTIC MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 35 V Average Rectified Forward Current (At Rated VR, TC = 100C) IO 200 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 100C) IFRM 400 A Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM 2000 A Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 2.0 A Storage/Operating Case Temperature Range Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25C) Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 1 MARKING DIAGRAM MBRP20035L MBRP20035L = Device Code ORDERING INFORMATION Device C Tstg, TC 55 to +150 TJ 55 to +150 C dv/dt 10,000 V/s 280 MBRP20035L Package Shipping POWERTAP III 50 Units/Foam Publication Order Number: MBRP20035L/D MBRP20035L THERMAL CHARACTERISTICS Characteristic Thermal Resistance -- Junction-to-Case Symbol Value Unit RJC 0.45 C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage g (Note ( 1.)) (IF = 200 A) VF Maximum Instantaneous Reverse Current (VR = 35 V) IR 1. Pulse Test: Pulse Width 380 s, Duty Cycle 2%. http://onsemi.com 281 TJ = 25C TJ = 100C 0.57 0.5 TJ = 25C TJ = 100C 10 250 Volts mA " &+155-: 18(3 (&5,),(3 POWERTAP III Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes. * * * * Very Low Forward Voltage Drop Highly Stable Oxide Passivated Junction Guardring for Stress Protection High dv/dt Capability http://onsemi.com SCHOTTKY BARRIER RECTIFIER 300 AMPERES 35 VOLTS Mechanical Characteristics: * * * * * * * * Dual Die Construction Case: Epoxy, Molded with Plated Copper Heatsink Base Weight: 40 grams (approximately) Finish: All External Surfaces Corrosion Resistant Base Plate Torques: See procedure given in the Package Outline Section Top Terminal Torque: 25-40 lb-in max. Shipped 50 units per foam Marking: MBRP30035L POWERTAP III CASE 357D PLASTIC MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 35 V Average Rectified Forward Current (At Rated VR, TC = 100C) IO 300 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 100C) IFRM 600 A Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM 3000 A Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 2.0 A Storage/Operating Case Temperature Range Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25C) Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 MARKING DIAGRAM MBRP30035L MBRP30035L = Device Code ORDERING INFORMATION Device C Tstg, TC 55 to +150 TJ 55 to +150 C dv/dt 10,000 V/s 282 MBRP30035L Package Shipping POWERTAP III 50 Units/Foam Publication Order Number: MBRP30035L/D MBRP30035L THERMAL CHARACTERISTICS Characteristic Thermal Resistance -- Junction-to-Case Symbol Value Unit RJC 0.4 C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage g (Note ( 1.)) (IF = 300 A) VF Maximum Instantaneous Reverse Current (VR = 35 V) IR 1. Pulse Test: Pulse Width 380 s, Duty Cycle 2%. http://onsemi.com 283 TJ = 25C TJ = 100C 0.57 0.5 TJ = 25C TJ = 100C 10 250 Volts mA http://onsemi.com 284 CHAPTER 4 Ultrafast Data Sheets http://onsemi.com 285 (3,(4 Preferred Devices 63)$&( 1605 .53$)$45 18(3 (&5,),(34 MURS105T3, MURS110T3, MURS115T3, MURS120T3, MURS140T3, MURS160T3 http://onsemi.com Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. * * * * Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling High Temperature Glass Passivated Junction Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 1.0 A, TJ = 150C) ULTRAFAST RECTIFIERS 1.0 AMPERE 50-600 VOLTS Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 95 mg (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped in 12 mm Tape and Reel, 2500 units per reel Polarity: Polarity Band Indicates Cathode Lead Marking: U1A, U1B, U1C, U1D, U1G, U1J MAXIMUM RATINGS SMB CASE 403A MARKING DIAGRAM U1x U1x= Device Code x = Specific Device Code = A, B, C, D, G or J Please See the Table on the Following Page ORDERING INFORMATION See detailed ordering and shipping information in the table on page 287 of this data sheet. DEVICE MARKING INFORMATION See general marking information in the device marking table on page 287 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 5 286 Publication Order Number: MURS120T3/D MURS120T3 Series MAXIMUM RATINGS MURS Symbol 105T3 110T3 115T3 Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 150 Average Rectified Forward Current IF(AV) 1.0 @ TL = 155C 2.0 @ TL = 145C 1.0 @ TL = 150C 2.0 @ TL = 125C Amps Non-Repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 40 35 Amps Rating Operating Junction Temperature 120T3 140T3 160T3 Unit 200 400 600 Volts TJ 65 to +175 C RJL 13 C/W THERMAL CHARACTERISTICS Thermal Resistance, Junction to Lead (TL = 25C) ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1.) (iF = 1.0 A, TJ = 25C) (iF = 1.0 A, TJ = 150C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 150C) iR Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/s) (iF = 0.5 A, iR = 1.0 A, IR to 0.25 A) trr Maximum Forward Recovery Time (iF = 1.0 A, di/dt = 100 A/s, Rec. to 1.0 V) tfr Volts 0.875 0.71 1.25 1.05 2.0 50 5.0 150 35 25 75 50 25 50 A ns 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping U1A SMB 2500 Units/Tape & Reel MURS110T3 U1B SMB 2500 Units/Tape & Reel MURS115T3 U1C SMB 2500 Units/Tape & Reel MURS120T3 U1D SMB 2500 Units/Tape & Reel MURS140T3 U1G SMB 2500 Units/Tape & Reel MURS160T3 U1J SMB 2500 Units/Tape & Reel MURS105T3 http://onsemi.com 287 ns MURS120T3 Series MURS105T3, MURS110T3, MURS115T3, MURS120T3 "++/+,.++'- > "',-'-'(.,(+0+.++'-&), - -# -# -# /+ +/+, /(%- /(%-, Figure 2. Typical Reverse Current* -=: 8JGK:H H=DLC 6G: INE>86A ;DG I=: =><=:HI KDAI6<: 9:K>8: >C I=: KDAI6<: <GDJE>C< -NE>86A G:K:GH: 8JGG:CI ;DG ADL:G KDAI6<: H:A:8I>DCH 86C 7: :HI>B6I:9 ;GDB I=:H: H6B: 8JGK:H >; 6EEA>:9 /+ >H HJ;;>8>:CIAN 7:ADL G6I:9 /+ '(- -2)"% )"-' / E )"-'E K "',-'-'(., /(%- /(%-, /+ +/+, /(%- /(%-, Figure 1. Typical Forward Voltage +- /(%- ))%" +# 0 -# 98 ,*.+ 0/ )/ /+ )(0+",,")-"('0--, "/ /+ (+0+.++'-&), Figure 3. Typical Capacitance -# " )"-'R%( )$ " / 98 ,*.+ 0/ - , -&)+-.+ "/ /+ (+0+ .++'- &), Figure 4. Current Derating, Case Figure 5. Power Dissipation http://onsemi.com 288 MURS120T3 Series MURS140T3, MURS160T3 >"',-'-'(.,(+0+.++'-&), "++/+,.++'- - -# -# -# /+ +/+, /(%- /(%-, Figure 7. Typical Reverse Current* -=: 8JGK:H H=DLC 6G: INE>86A ;DG I=: =><=:HI KDAI6<: 9:K>8: >C I=: KDAI6<: <GDJE>C< -NE>86A G:K:GH: 8JGG:CI ;DG ADL:G KDAI6<: H:A:8I>DCH 86C 7: :HI>B6I:9 ;GDB I=:H: H6B: 8JGK:H >; 6EEA>:9 /+ >H HJ;;>8>:CIAN 7:ADL G6I:9 /+ '(- -2)"% )"-' / E )"-'E K "',-'-'(., /(%- /(%-, /+ +/+, /(%- /(%-, Figure 6. Typical Forward Voltage +- /(%- ))%" +# 0 -# 98 ,*.+ 0/ )/ /+ )(0+",,")-"('0--, "/ /+ (+0+.++'-&), Figure 8. Typical Capacitance )"-' %( " )$ " ,*.+ 0/ / 98 -# - , -&)+-.+ "/ /+ (+0+ .++'- &), Figure 9. Current Derating, Case Figure 10. Power Dissipation http://onsemi.com 289 Preferred Device 63)$&( 1605 .53$)$45 18(3 (&5,),(34 Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. http://onsemi.com * * * * Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling High Temperature Glass Passivated Junction Low Forward Voltage Drop (0.77 Volts Max @ 2.0 A, TJ = 150C) ULTRAFAST RECTIFIERS 2 AMPERES 200 VOLTS Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 95 mg (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal MARKING DIAGRAM Leads are Readily Solderable * Lead and Mounting Surface Temperature for Soldering Purposes: * * * 260C Max. for 10 Seconds Shipped in 12 mm Tape and Reel, 2500 units per reel Polarity: Polarity Band Indicates Cathode Lead Marking: U2D U2D SMB CASE 403A U2D = Specific Device Code MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 200 V Average Rectified Forward Current IF(AV) 2.0 @ TL = 145C A Non-Repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 40 A Operating Junction Temperature Range TJ -65 to +175 C Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 1 290 ORDERING INFORMATION Device Package Shipping MURS220T3 SMB 2500/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MURS220T3/D MURS220T3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Lead (TL = 25C) Symbol Value Unit RJL 13 C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 1.) (iF = 2.0 A, TJ = 25C) (iF = 2.0 A, TJ = 150C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 150C) iR Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/s) (iF = 0.5 A, iR = 1.0 A, IR to 0.25 A) trr Maximum Forward Recovery Time (iF = 1.0 A, di/dt = 100 A/s, Rec. to 1.0 V) tfr Volts 0.95 0.77 A 2.0 50 ns 35 25 25 ns 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. " "',-'-'(.,(+0+.++'-&), " "',-'-'(.,(+0+.++'-&), - - - - / "',-'-'(., /(%- /(%-, / "',-'-'(., /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage http://onsemi.com 291 -# -# "++/+,.++'- "++/+,.++'- MURS220T3 -# -# -# -# /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 3. Typical Reverse Current* Figure 4. Maximum Reverse Current -=: 8JGK:H H=DLC 6G: INE>86A ;DG I=: =><=:HI KDAI6<: 9:K>8: >C I=: KDAI6<: <GDJE>C< -NE>86A G:K:GH: 8JGG:CI ;DG ADL:G KDAI6<: H:A:8I>DCH 86C 7: :HI>B6I:9 ;GDB I=:H: H6B: 8JGK:H >; 6EEA>:9 /+ >H HJ;;>8>:CIAN 7:ADL G6I:9 /+ "/ /+ (+0+.++'-&), '(- -2)"% )"-' / E +- /(%- ))%" +#% 0 -# 98 ,*.+ 0/ /+ +/+, /(%- /(%-, - , -&)+-.+ Figure 5. Typical Capacitance Figure 6. Current Derating, Case )/ /+ )(0+",,")-"('0--, )"-'E -# 98 ,*.+ 0/ "/ /+ (+0+ .++'- &), Figure 7. Power Dissipation http://onsemi.com 292 Preferred Device 63)$&( 1605 .53$)$45 18(3 (&5,),(34 Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. http://onsemi.com * * * * Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling High Temperature Glass Passivated Junction Low Forward Voltage Drop (0.95 Volts Max @ 2.0 A, TJ = 150C) ULTRAFAST RECTIFIERS 2 AMPERES 300-400 VOLTS Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 95 mg (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped in 12 mm Tape and Reel, 2500 units per reel Polarity: Polarity Band Indicates Cathode Lead Marking: U2F, U2G MARKING DIAGRAM U2x SMB CASE 403A x = F (230T3) G (240T3) MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MURS230T3 MURS240T3 VRRM VRWM VR Average Rectified Forward Current IF(AV) Value Unit 300 400 1.0 @ TL = 150C 2.0 @ TL = 125C A Non-Repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 35 A Operating Junction Temperature Range TJ -65 to +175 C Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 3 ORDERING INFORMATION V 293 Device Package Shipping MURS230T3 SMB 2500/Tape & Reel MURS240T3 SMB 2500/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MURS230T3/D MURS230T3, MURS240T3 THERMAL CHARACTERISTICS Rating Symbol Value Unit RJL 13 C/W Thermal Resistance, Junction to Lead (TL = 25C) ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1.) (iF = 2.0 A, TJ = 25C) (iF = 2.0 A, TJ = 150C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 150C) iR Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/s) (iF = 0.5 A, iR = 1.0 A, IR to 0.25 A) trr Maximum Forward Recovery Time (iF = 1.0 A, di/dt = 100 A/s, Rec. to 1.0 V) tfr Volts 1.15 0.95 A 5.0 150 ns 65 50 50 ns 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. A) " "',-'-'(.,(+0+.++'- " "',-'-'(.,(+0+.++'-&), - - K "',-'-'(., /(%- /(%-, K "',-'-'(., /(%- /(%-, Figure 2. Maximum Forward Voltage Figure 1. Typical Forward Voltage http://onsemi.com 294 -# -# -# -# "++/+,.++'- A) A) "++/+,.++'- MURS230T3, MURS240T3 -# -# /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 3. Typical Reverse Current* Figure 4. Maximum Reverse Current* -=: 8JGK:H H=DLC 6G: INE>86A ;DG I=: =><=:HI KDAI6<: 9:K>8: >C I=: KDAI6<: <GDJE>C< -NE>86A G:K:GH: 8JGG:CI ;DG ADL:G KDAI6<: H:A:8I>DCH 86C 7: :HI>B6I:9 ;GDB I=:H: H6B: 8JGK:H >; 6EEA>:9 /+ >H HJ;;>8>:CIAN 7:ADL G6I:9 /+ '(- -2)"% )"-' / E )"-'E )"-'E Figure 6. Maximum Capacitance 98 ,*.+ 0/ Figure 5. Typical Capacitance +- /(%- ))%" +#% 0 -# /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, )/ /+ )(0+",,")-"('0--, "/ /+ (+0+.++'-&), '(- &1"&.& )"-' / E -# ,*.+ 0/ 98 - , -&)+-.+ "/ /+ (+0+ .++'- &), Figure 8. Power Dissipation Figure 7. Current Derating, Case http://onsemi.com 295 Preferred Device 63)$&( 1605 .53$)$45 18(3 (&5,),(34 Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. http://onsemi.com * * * * Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling High Temperature Glass Passivated Junction Low Forward Voltage Drop (1.20 Volts Max @ 2.0 A, TJ = 150C) ULTRAFAST RECTIFIERS 2 AMPERES 600 VOLTS Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 95 mg (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal MARKING DIAGRAM Leads are Readily Solderable * Lead and Mounting Surface Temperature for Soldering Purposes: * * * 260C Max. for 10 Seconds Shipped in 12 mm Tape and Reel, 2500 units per reel Polarity: Polarity Band Indicates Cathode Lead Marking: U2J U2J = Specific Device Code MAXIMUM RATINGS Rating ORDERING INFORMATION Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 600 Volts Average Rectified Forward Current IF(AV) 2.0 @ TL = 125C Amps 35 Amps 65 to +175 C Non-Repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM Operating Junction Temperature TJ Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 1 U2J SMB CASE 403A 296 Device Package Shipping MURS260T3 SMB 2500/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MURS260T3/D MURS260T3 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RJL 13 C/W Symbol Value Unit Thermal Resistance, Junction to Lead (TL = 25C) ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 1.) (iF = 2.0 A, TJ = 25C) (iF = 2.0 A, TJ = 150C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 150C) iR Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/s) (iF = 0.5 A, iR = 1.0 A, IR to 0.25 A) trr Maximum Forward Recovery Time (iF = 1.0 A, di/dt = 100 A/s, Rec. to 1.0 V) tfr Volts 1.45 1.20 A 5.0 150 ns 75 50 50 ns 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. - - - - " "',-'-'(.,(+0+.++'- " "',-'-'(.,(+0+.++'-&), / "',-'-'(., /(%- /(%-, / "',-'-'(., /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage http://onsemi.com 297 MURS260T3 -# "++/+,.++'- "++/+,.++'- -# -# -# -# -# /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 3. Typical Reverse Current* Figure 4. Maximum Reverse Current '(- -2)"% )"-' / E +- /(%- ))%" +#% 0 -# 98 ,*.+ 0/ /+ +/+, /(%- /(%-, - , -&)+-.+ Figure 5. Typical Capacitance Figure 6. Current Derating, Case )/ /+ )(0+",,")-"('0--, )"-'E "/ /+ (+0+.++'-&), -=: 8JGK:H H=DLC 6G: INE>86A ;DG I=: =><=:HI KDAI6<: 9:K>8: >C I=: KDAI6<: <GDJE>C< -NE>86A G:K:GH: 8JGG:CI ;DG ADL:G KDAI6<: H:A:8I>DCH 86C 7: :HI>B6I:9 ;GDB I=:H: H6B: 8JGK:H >; 6EEA>:9 /+ >H HJ;;>8>:CIAN 7:ADL G6I:9 /+ ,*.+ 0/ 98 -# "/ /+ (+0+ .++'- &), Figure 7. Power Dissipation http://onsemi.com 298 Preferred Devices 63)$&( 1605 .53$)$45 18(3 (&5,),(34 . . . employing state-of-the-art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes, in surface mount applications where compact size and weight are critical to the system. * * * * http://onsemi.com ULTRAFAST RECTIFIERS 3.0 AMPERES 200-600 VOLTS Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 3.0 A, TJ = 150C) Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 217 mg (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped in 16 mm Tape and Reel, 2500 units per reel Polarity: Notch in Plastic Body Indicates Cathode Lead Marking: U3D, U3G, U3J SMC CASE 403 PLASTIC MARKING DIAGRAM U3x MAXIMUM RATINGS Please See the Table on the Following Page U3x = Device Code x = D, G , or J ORDERING INFORMATION Device Package Shipping MURS320T3 SMC 2500/Tape & Reel MURS340T3 SMC 2500/Tape & Reel MURS360T3 SMC 2500/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 3 299 Publication Order Number: MURS320T3/D MURS320T3, MURS340T3, MURS360T3 MAXIMUM RATINGS Symbol MURS320T3 MURS340T3 MURS360T3 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 200 400 600 Volts Average Rectified Forward Current IF(AV) 3.0 @ TL = 140C 4.0 @ TL = 130C 3.0 @ TL = 130C 4.0 @ TL = 115C 3.0 @ TL = 130C 4.0 @ TL = 115C Amps Non-Repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 75 Amps TJ 65 to +175 C RJL 11 C/W Operating Junction Temperature THERMAL CHARACTERISTICS Thermal Resistance, Junction to Lead ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1.) (iF = 3.0 A, TJ = 25C) (iF = 4.0 A, TJ = 25C) (iF = 3.0 A, TJ = 150C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 150C) iR Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/s) (iF = 0.5 A, iR = 1.0 A, IREC to 0.25 A) trr Maximum Forward Recovery Time (iF = 1.0 A, di/dt = 100 A/s, Recovery to 1.0 V) tfr Volts 0.875 0.89 0.71 1.25 1.28 1.05 1.25 1.28 1.05 5.0 15 10 250 10 250 35 25 75 50 75 50 25 50 50 A ns 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. http://onsemi.com 300 ns MURS320T3, MURS340T3, MURS360T3 MURS320T3 "++/+,.++'- -# -# -# /+ +/+, /(%- /(%-, Figure 2. Typical Reverse Current* -=: 8JGK:H H=DLC 6G: INE>86A ;DG I=: =><=:HI KDAI6<: 9:K>8: >C I=: KDAI6<: <GDJE>C< -NE>86A G:K:GH: 8JGG:CI ;DG ADL:G KDAI6<: H:A:8I>DCH 86C 7: :HI>B6I:9 ;GDB I=:H: H6B: 8JGK:H >; /+ >H HJ;;>8>:CIAN 7:ADL G6I:9 /+ )/ /+ )(0+",,")-"('0--, > "',-'-'(.,(+0+.++'-&), -# " )"-"/R%( )$ " / 98 ,*.+ 0/ K "',-'-'(., /(%- /(%-, "/ /+ (+0+ .++'- &), Figure 1. Typical Forward Voltage +- /(%- ))%" +#% 0 -# -2)"% )"-' - / E )"-'E "/ /+ (+0+.++'-&), Figure 3. Power Dissipation 98 ,*.+ 0/ - , -&)+-.+ /+ +/+, /(%- /(%-, Figure 4. Current Derating, Case Figure 5. Typical Capacitance http://onsemi.com 301 MURS320T3, MURS340T3, MURS360T3 MURS340T3, MURS360T3 "++/+,.++'- -# -# -# /+ +/+, /(%- /(%-, Figure 7. Typical Reverse Current* -=: 8JGK:H H=DLC 6G: INE>86A ;DG I=: =><=:HI KDAI6<: 9:K>8: >C I=: KDAI6<: <GDJE>C< -NE>86A G:K:GH: 8JGG:CI ;DG ADL:G KDAI6<: H:A:8I>DCH 86C 7: :HI>B6I:9 ;GDB I=:H: H6B: 8JGK:H >; /+ >H HJ;;>8>:CIAN 7:ADL G6I:9 /+ )/ /+ )(0+",,")-"('0--, > "',-'-'(.,(+0+.++'-&), -# ,*.+ 0/ 98 )"-"/ %(, " " )$ / K "',-'-'(., /(%- /(%-, "/ /+ (+0+ .++'- &), Figure 6. Typical Forward Voltage )"-'E "/ /+ (+0+.++'-&), Figure 8. Power Dissipation 98 ,*.+ 0/ -2)"% )"-' - / E - , -&)+-.+ /+ +/+, /(%- /(%-, Figure 9. Current Derating, Case Figure 10. Typical Capacitance http://onsemi.com 302 Preferred Device " 18(3 (&5,),(3 DPAK Surface Mount Package . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: http://onsemi.com ULTRAFAST RECTIFIER 3.0 AMPERES 200 VOLTS * Ultrafast 35 Nanosecond Recovery Time * Low Forward Voltage Drop * Low Leakage Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 0.4 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * 1 4 3 Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 75 units per plastic tube Available in 16 mm Tape and Reel, 2500 units per reel, by adding a "T4'' suffix to the part number Marking: U320 4 1 3 DPAK CASE 369A PLASTIC MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 200 V Average Rectified Forward Current (Rated VR, TC = 158C) IF(AV) 3.0 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 158C) IFRM 6.0 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, 60 Hz) IFSM 75 A TJ, Tstg -65 to +175 C Operating Junction and Storage Temperature Range MARKING DIAGRAM U320 U320 = Device Code ORDERING INFORMATION Device Package Shipping MURD320 DPAK 75 Units/Rail MURD320T4 DPAK 2500/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 303 Publication Order Number: MURD320/D MURD320 THERMAL CHARACTERISTICS Rating Symbol Value Unit RJC RJA 6 80 C/W Thermal Resistance, Junction to Case Junction to Ambient (Note 1.) ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage Drop (Note 2.) (iF = 3 Amps, TJ = 25C) (iF = 3 Amps, TJ = 125C) vF Maximum Instantaneous Reverse Current (Note 2.) (TJ = 25C, Rated dc Voltage) (TJ = 125C, Rated dc Voltage) iR Maximum Reverse Recovery Time (IF = 1 Amp, di/dt = 50 Amps/s, VR = 30 V, TJ = 25C) (IF = 0.5 Amp, iR = 1 Amp, IREC = 0.25 A, VR = 30 V, TJ = 25C) trr Volts 0.95 0.75 A 5 500 ns 35 25 1. Rating applies when surface mounted on the minimum pad sizes recommended. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. "++/+,.++'- -# /+ +/+, /(%- /(%-, Figure 2. Typical Reverse Current* -=: 8JGK:H H=DLC 6G: INE>86A ;DG I=: =><=:HI KDAI6<: 9:K>8: >C I=: KDAI6<: <GDJE>C< -NE>86A G:K:GH: 8JGG:CI ;DG ADL:G KDAI6<: H:A:8I>DCH 86C 7: :HI>B6I:9 ;GDB I=:H: 8JGK:H >; /+ >H HJ;;>8>:CIAN 7:ADL G6I:9 /+ -# K "',-'-'(., /(%- /(%-, )/ /+ )(0+",,")-"('0--, > "',-'-'(.,(+0+.++'-&), ,"' 0/ ,*.+ 0/ 98 ")$ "/ -# "/ /+ (+0+ .++'- &), Figure 1. Typical Forward Voltage Figure 3. Average Power Dissipation http://onsemi.com 304 "/ /+ (+0+.++'-&), +- /(%- ))%" +# 0 ,"' 0/ (+ ,*.+ 0/ 98 -# +- /(%- ))%" +# 0 ,.+ &(.'- (' &"' ) ,"3 +(&&' 98 -# ,"' 0/ (+ ,*.+ 0/ - , -&)+-.+ - &"'- -&)+-.+ Figure 4. Current Derating, Case Figure 5. Current Derating, Ambient )"-'E "/ /+ (+0+.++'-&), MURD320 -# /+ +/+, /(%- /(%-, Figure 6. Typical Capacitance http://onsemi.com 305 Preferred Device " 18(3 (&5,),(3 DPAK Surface Mount Package . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: http://onsemi.com ULTRAFAST RECTIFIER 6.0 AMPERES 200 VOLTS * Ultrafast 35 Nanosecond Recovery Time * Low Forward Voltage Drop * Low Leakage Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 0.4 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 75 units per plastic tube Available in 16 mm Tape and Reel, 2500 units per reel, by adding a "T4'' suffix to the part number Marking: U620T 4 1 3 DPAK CASE 369A PLASTIC MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 200 V Average Rectified Forward Current (Rated VR, TC = 140C) Per Diode Per Device IF(AV) Peak Repetitive Forward Current (Rated VR, Square Wave, Per Diode 20 kHz, TC = 145C) IF 6.0 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, 60 Hz) IFSM 50 A Operating Junction and Storage Temperature Range MARKING DIAGRAM A U620T 3.0 6.0 U620T = Device Code ORDERING INFORMATION TJ, Tstg C -65 to +175 Device Package Shipping MURD620CT DPAK 75 Units/Rail MURD620CTT4 DPAK 2500/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 3 306 Publication Order Number: MURD620CT/D MURD620CT THERMAL CHARACTERISTICS (Per Diode) Rating Symbol Value Unit RJC RJA 9 80 C/W Thermal Resistance, Junction to Case Junction to Ambient (Note 1.) ELECTRICAL CHARACTERISTICS (Per Diode) Maximum Instantaneous Forward Voltage Drop (Note 2.) (iF = 3 Amps, TC = 25C) (iF = 3 Amps, TC = 125C) (iF = 6 Amps, TC = 25C) (iF = 6 Amps, TC = 125C) vF Maximum Instantaneous Reverse Current (Note 2.) (TJ = 25C, Rated dc Voltage) (TJ = 125C, Rated dc Voltage) iR Maximum Reverse Recovery Time (IF = 1 Amp, di/dt = 50 Amps/s, VR = 30 V, TJ = 25C) (IF = 0.5 Amp, iR = 1 Amp, IREC = 0.25 A, VR = 30 V, TJ = 25C) trr Volts 1 0.96 1.2 1.13 A 5 250 ns 35 25 1. Rating applies when surface mounted on the minimum pad sizes recommended. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. "++/+,.++'-B /+ +/+, /(%- /(%-, Figure 2. Typical Leakage Current* (Per Leg) -=: 8JGK:H H=DLC 6G: INE>86A ;DG I=: =><=:HI KDAI6<: 9:K>8: >C I=: KDAI6<: <GDJE>C< -NE>86A G:K:GH: 8JGG:CI ;DG ADL:G KDAI6<: H:A:8I>DCH 86C 7: :HI>B6I:9 ;GDB I=:H: 8JGK:H >; /+ >H HJ;;>8>:CIAN 7:ADL G6I:9 /+ -# K "',-'-'(., /(%- /(%-, )/ /+ )(0+",,")-"('0--, > "',-'-'(.,(+0+.++'-&), -# ,"' 0/ ")$ "/ 98 ,*.+ 0/ -# "/ /+ (+0+ .++'- &), Figure 1. Typical Forward Voltage (Per Leg) Figure 3. Average Power Dissipation (Per Leg) http://onsemi.com 307 +- /(%- ))%" +# 0 -# 98 ,"' 0/ (+ ,*.+ 0/ "/ /+ (+0+.++'-&), +- /(%- ))%" +# 0 ,.+ &(.'- (' &"' ) ,"3 +(&&' 98 ,"' 0/ (+ ,*.+ 0/ -# - , -&)+-.+ - &"'- -&)+-.+ Figure 4. Current Derating, Case (Per Leg) Figure 5. Current Derating, Ambient (Per Leg) )"-'E "/ /+ (+0+.++'-&), MURD620CT -# /+ +/+, /(%- /(%-, Figure 6. Typical Capacitance (Per Leg) http://onsemi.com 308 " 1)5 .53$)$45 (&17(3: 18(3 (&5,),(3 Plastic DPAK Package http://onsemi.com State of the art geometry features epitaxial construction with glass passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes. * Soft Ultrafast Recovery (35 ns typ.) * Highly Stable Oxide Passivated Junction * Matched Dual Die Construction -- May Be Paralleled for High SOFT ULTRAFAST RECTIFIER 6.0 AMPERES 200 VOLTS Current Output * Short Heat Sink Tab Manufactured -- Not Sheared * Epoxy Meets UL94, VO at 1/8 Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 0.4 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * 2 1 Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped in 75 units per plastic tube Available in 16 mm Tape and Reel, 2500 units per Reel, Add "T4'' to Suffix part number Marking: S620T 3 DPAK CASE 369A PLASTIC MARKING DIAGRAM S620T MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol Value Unit VRRM VRWM VR 200 V Average Rectified Forward Current (At Rated VR, TC = 137C) Per Leg Per Package IO Peak Repetitive Forward Current (At Rated VR, Square Wave, Per Leg 20 kHz, TC = 138C) IFRM Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Per Package IFSM 50 A Tstg, TC -55 to +175 C TJ -55 to +175 C Storage/Operating Case Temperature Range Operating Junction Temperature Range Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 S620T = Device Code A 3.0 6.0 ORDERING INFORMATION 6.0 A 309 Device Package Shipping MSRD620CT DPAK 75 Units/Rail MSRD620CTT4 DPAK 2500/Tape & Reel Publication Order Number: MSRD620CT/D MSRD620CT THERMAL CHARACTERISTICS Rating Thermal Resistance - Junction to Case - Junction to Ambient Symbol Value Unit RJC RJA 9.0 80 C/W Per Leg Per Leg ELECTRICAL CHARACTERISTICS Rating Symbol Maximum Instantaneous Forward Voltage (Note 1.), see Figure 2. Value VF Per Leg TJ = 25C TJ = 150C 1.15 1.35 1.05 1.30 TJ = 25C TJ = 150C 5.0 2.0 200 100 (IF = 3.0 A) (IF = 6.0 A) Maximum Instantaneous Reverse Current, see Figure 4. IR Per Leg (VR = 200 V) (VR = 100 V) Maximum Reverse Recovery Time (Note 2.) (VR = 30 V, IF = 1.0 A, di/dt = 50 A/s) (VR = 30 V, IF = 3.0 A, di/dt = 50 A/s) Per Leg Maximum Peak Reverse Recovery Current (VR = 30 V, IF = 1.0 A, di/dt = 50 A/s) (VR = 30 V, IF = 3.0 A, di/dt = 50 A/s) Per Leg Unit V A trr ns 45 55 IRM A 2.0 3.0 ""',-'-'(.,(+0+.++'-&), ""',-'-'(.,(+0+.++'-&), 1. Pulse Test: Pulse Width 250 s, Duty Cycle 2%. 2. trr measured projecting from 25% of IRM to ground. -# -# / &1"&.& "',-'-'(., (+0+ /(%- /(%-, Figure 1. Typical Forward Voltage, Per Leg Figure 2. Maximum Forward Voltage, Per Leg "+ &1"&.&+/+,.++'-&), -# "+ +/+,.++'-&), / "',-'-'(., (+0+ /(%- /(%-, -# /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 3. Typical Reverse Current, Per Leg Figure 4. Maximum Reverse Current, Per Leg http://onsemi.com 310 +- /(%- ))%" +*.'2 @!O +# 0 -# 98 ,*.+ 0/ "/ /+ (+0+.++'-&), "/ /+ (+0+.++'-&), MSRD620CT ,"' 0/ +- /(%- ))%" +*.'2 @!O +# 0 -# ,*.+ 0/ 98 ,"' 0/ - , -&)+-.+ - &"'- -&)+-.+ Figure 5. Current Derating, Case (Per Leg) Figure 6. Current Derating, Ambient (Per Leg) )"-'E -# /+ +/+, /(%- /(%-, +I-"/-+',"'--!+&%+,",-''(+&%"3 Figure 7. Typical Capacitance (Per Leg) I -"& H Figure 8. Transient Thermal Response (RJA) http://onsemi.com 311 MSRD620CT +I-"/-+',"'--!+&% +,",-' '(+&%"3 I -"& H Figure 9. Transient Thermal Response (RJC) http://onsemi.com 312 Preferred Device " 18(3 (&5,),(3 D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: * * * * * * * * http://onsemi.com ULTRAFAST RECTIFIER 16 AMPERES 200 VOLTS Package Designed for Power Surface Mount Applications Ultrafast 35 Nanosecond Recovery Times 175C Operating Junction Temperature Epoxy Meets UL94, VO @ 1/8 High Temperature Glass Passivated Junction Low Leakage Specified @ 150C Case Temperature Short Heat Sink Tab Manufactured -- Not Sheared! Similar in Size to Industrial Standard TO-220 Package Mechanical Characteristics * Case: Epoxy, Molded * Weight: 1.7 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * 4 Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 units per plastic tube Available in 24 mm Tape and Reel, 800 units per reel by adding a "T4" suffix to the part number Marking: U1620T 1 3 D2PAK CASE 418B STYLE 3 MARKING DIAGRAM MAXIMUM RATINGS (Per Leg) Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 200 V Average Rectified Forward Current (Rated VR, TC = 150C) Total Device IF(AV) 8.0 16 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 150C) IFM 16 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A Rating Operating Junction and Storage Temperature Range U1620T U1620T = Device Code ORDERING INFORMATION Device TJ, Tstg C -65 to +175 Package Shipping MURB1620CT D2PAK 50 Units/Rail MURB1620CTT4 D2PAK 800/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 313 Publication Order Number: MURB1620CT/D MURB1620CT THERMAL CHARACTERISTICS (Per Leg) Symbol Value Unit Maximum Thermal Resistance, Junction to Case RJC 3 C/W Maximum Thermal Resistance, Junction to Ambient (Note 1.) RJA 50 C/W TL 260 C Symbol Max Rating Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Maximum Instantaneous Forward Voltage (Note 2.) (iF = 8 Amp, TC = 150C) (iF = 8 Amp, TC = 25C) vF Maximum Instantaneous Reverse Current (Note 2.) (Rated dc Voltage, TC = 150C) (Rated dc Voltage, TC = 25C) iR Maximum Reverse Recovery Time (IF = 1 Amp, di/dt = 50 Amp/s) (IF = 0.5 Amp, iR = 1 Amp, IREC = 0.25 Amp) trr Unit Volts 0.895 0.975 A 250 5 ns 35 25 1. See Chapter 7 for mounting conditions 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% $ $ " ++/+,.++'-SR > "',-'-'(.,(+0+.++'-&), -# -# K "',-'-'(., /(%- / +- /+ ))%" +# 0 ,*.+ 0/ - , -&)+-.+ /+ +/+, /(%- / Figure 2. Typical Reverse Current, Per Leg* )//+ )(0+",,")-"('0--, " //+ )(0+",,")-"('0--, Figure 1. Typical Forward Voltage, Per Leg -# ,*.+ 0/ Figure 3. Current Derating Case, Per Leg "/ /+ (+0+ .++'- &), Figure 4. Power Dissipation, Per Leg http://onsemi.com 314 3#I GI +# 8JGK:H 6EEAN ;DG EDL:G EJAH: IG6>C H=DLC G:69 I>B: 6I - I I JIN N8A: I IT-#E@ - )E@ 3#I ,"' % ).%, )E@ I -"& BH Figure 5. Thermal Response $ )"-'E GI-+',"'--!+&%+,",-''(+&%"3 MURB1620CT -# /+ +/+, /(%- / Figure 6. Typical Capacitance, Per Leg http://onsemi.com 315 $ Preferred Device " 18(3 (&5,),(3 D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: * * * * * * * * * http://onsemi.com ULTRAFAST RECTIFIER 16 AMPERES 600 VOLTS Package Designed for Power Surface Mount Applications Ultrafast 60 Nanosecond Recovery Times 175C Operating Junction Temperature Epoxy Meets UL94, VO @ 1/8 High Temperature Glass Passivated Junction High Voltage Capability to 600 V Low Leakage Specified @ 150C Case Temperature Short Heat Sink Tab Manufactured - Not Sheared! Similar in Size to Industrial Standard TO-220 Package Mechanical Characteristics * Case: Epoxy, Molded * Weight: 1.7 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * 4 Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 units per plastic tube Available in 24 mm Tape and Reel, 800 units per reel by adding a "T4" suffix to the part number Marking: U1660T 1 3 D2PAK CASE 418B STYLE 3 MARKING DIAGRAM MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 600 V Average Rectified Forward Current (Rated VR, TC = 150C) Total Device IF(AV) 8.0 16 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 150C) IFM 16 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A Operating Junction and Storage Temperature Range U1660T U1660T = Device Code ORDERING INFORMATION TJ, Tstg Device C -65 to +175 Package Shipping MURB1660CT D2PAK 50 Units/Rail MURB1660CTT4 D2PAK 800/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 316 Publication Order Number: MURB1660CT/D MURB1660CT THERMAL CHARACTERISTICS (Per Leg) Symbol Value Unit Maximum Thermal Resistance, Junction to Case RJC 2 C/W Maximum Thermal Resistance, Junction to Ambient (Note 1.) RJA 50 C/W TL 260 C Symbol Max Rating Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Maximum Instantaneous Forward Voltage (Note 2.) (iF = 8 Amp, TC = 150C) (iF = 8 Amp, TC = 25C) vF Maximum Instantaneous Reverse Current (Note 2.) (Rated dc Voltage, TC = 150C) (Rated dc Voltage, TC = 25C) iR Maximum Reverse Recovery Time (IF = 1 Amp, di/dt = 50 Amp/s) (IF = 0.5 Amp, iR = 1 Amp, IREC = 0.25 Amp) trr Unit Volts 1.20 1.50 A 500 10 ns 60 50 1. See Chapter 7 for mounting conditions 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% $ $ " ++/+,.++'-SR > "',-'-'(.,(+0+.++'-&), -# -# K "',-'-'(., /(%- / )//+ )(0+",,")-"('0--, " //+ )(0+",,")-"('0--, ,*.+ 0/ Figure 2. Typical Reverse Current, Per Leg +- /+ ))%" +# 0 /+ +/+, /(%- / Figure 1. Typical Forward Voltage, Per Leg - , -&)+-.+ ,*.+ 0/ -# Figure 3. Current Derating, Case, Per Leg "/ /+ (+0+ .++'- &), Figure 4. Power Dissipation, Per Leg http://onsemi.com 317 3#I GI +# 8JGK:H 6EEAN ;DG EDL:G EJAH: IG6>C H=DLC G:69 I>B: 6I - I I JIN N8A: I IT-#E@ - )E@ 3#I ,"' % ).%, )E@ I -"& BH Figure 5. Thermal Response $ )"-'E GI-+',"'--!+&%+,",-''(+&%"3 MURB1660CT -# /+ +/+, /(%- / Figure 6. Typical Capacitance, Per Leg http://onsemi.com 318 $ Preferred Device # 18(3 (&5,),(3 D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: * * * * * * * * * http://onsemi.com ULTRAFAST RECTIFIER 8.0 AMPERES 400 VOLTS Package Designed for Power Surface Mount Applications Ultrafast 28 Nanosecond Recovery Times 175C Operating Junction Temperature Epoxy Meets UL94, VO @ 1/8 High Temperature Glass Passivated Junction High Voltage Capability Low Leakage Specified @ 150C Case Temperature Short Heat Sink Tab Manufactured - Not Sheared! Similar in Size to Industrial Standard TO-220 Package Mechanical Characteristics * Case: Epoxy, Molded * Weight: 1.7 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * 4 Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 units per plastic tube Available in 24 mm Tape and Reel, 800 units per reel by adding a "T4" suffix to the part number Marking: UH840 1 3 D2PAK CASE 418B STYLE 3 MARKING DIAGRAM MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 400 V Average Rectified Forward Current (Rated VR, TC = 120C) Total Device IF(AV) 4.0 8.0 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 120C) IFM 8.0 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A UH840 UH840 = Device Code ORDERING INFORMATION Controlled Avalanche Energy WAVAL 20 mJ Operating Junction and Storage Temperature Range TJ, Tstg -65 to +175 C Device Package Shipping MURHB840CT D2PAK 50 Units/Rail MURHB840CTT4 D2PAK 800/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 319 Publication Order Number: MURHB840CT/D MURHB840CT THERMAL CHARACTERISTICS (Per Leg) Symbol Value Unit Maximum Thermal Resistance, Junction to Case RJC 3.0 C/W Maximum Thermal Resistance, Junction to Ambient (Note 1.) RJA 50 C/W Symbol Max Unit Maximum Instantaneous Forward Voltage (Note 2.) (iF = 4.0 Amps, TC = 150C) (iF = 4.0 Amps, TC = 25C) vF 1.9 Volts Maximum Instantaneous Reverse Current (Note 2.) (Rated dc Voltage, TC = 150C) (Rated dc Voltage, TC = 25C) iR 500 10 A Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amps/s) trr 28 ns Rating ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic 2.2 "++/+,.++'-SR -# -# K "',-'-'(., /(%- /(%-, /+ +/+, /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current, Per Leg +- /+ ))%" +# 0 )"-'E " /+ )(0+",,")-"('0--, > "',-'-'(.,(+0+.++'-&) 1. See Chapter 7 for mounting conditions 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% ,*.+ 0/ - , -&)+-.+ Figure 3. Current Derating, Case /+ +/+, /(%- /(%-, Figure 4. Typical Capacitance, Per Leg http://onsemi.com 320 )/ /+ )(0+",,")-"('0--, MURHB840CT -# ,*.+ 0/ "/ /+ (+0+ .++'- &), Figure 5. Forward Power Dissipation, Per Leg http://onsemi.com 321 Preferred Device # 18(3 (&5,),(3 D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: * * * * * * * * * http://onsemi.com ULTRAFAST RECTIFIER 8.0 AMPERES 600 VOLTS Package Designed for Power Surface Mount Applications Ultrafast 35 Nanosecond Recovery Times 175C Operating Junction Temperature Epoxy Meets UL94, VO @ 1/8 High Temperature Glass Passivated Junction High Voltage Capability to 600 Volts Low Leakage Specified @ 150C Case Temperature Short Heat Sink Tab Manufactured -- Not Sheared! Similar in Size to Industry Standard TO-220 Package Mechanical Characteristics * Case: Epoxy, Molded * Weight: 1.7 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * 4 Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 units per plastic tube Available in 24 mm Tape and Reel, 800 units per reel by adding a "T4" suffix to the part number Marking: UH860 1 3 D2PAK CASE 418B STYLE 3 MARKING DIAGRAM MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 600 V Average Rectified Forward Current (Rated VR, TC = 120C) Total Device IF(AV) 4.0 8.0 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 120C) IFM 8.0 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A Operating Junction and Storage Temperature Range UH860 UH860 = Device Code ORDERING INFORMATION TJ, Tstg C -65 to +175 Device Package Shipping MURHB860CT D2PAK 50 Units/Rail MURHB860CTT4 D2PAK 800/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 1 322 Publication Order Number: MURHB860CT/D MURHB860CT THERMAL CHARACTERISTICS (Per Leg) Symbol Value Unit Maximum Thermal Resistance, Junction to Case RJC 3.0 C/W Maximum Thermal Resistance, Junction to Ambient RJA 50 C/W Symbol Max Unit Maximum Instantaneous Forward Voltage (Note 1.) (iF = 4.0 Amps, TC = 150C) (iF = 4.0 Amps, TC = 25C) vF 2.5 2.8 Volts Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 150C) (Rated dc Voltage, TC = 25C) iR 500 10 A Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amps/s) trr 35 ns Rating ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% http://onsemi.com 323 (3,(4 Preferred Devices " 18(3 (&5,),(34 MUR105, MUR110, MUR115, MUR120, MUR130, MUR140, MUR160 http://onsemi.com . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: * * * * * * Ultrafast 25, 50 and 75 Nanosecond Recovery Times 175C Operating Junction Temperature Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction Reverse Voltage to 600 Volts ULTRAFAST RECTIFIERS 1.0 AMPERE 50-600 VOLTS Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 0.4 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead and Mounting Surface Temperature for Soldering Purposes: * * * * 220C Max. for 10 Seconds, 1/16 from case Shipped in plastic bags, 1000 per bag Available Tape and Reeled, 5000 per reel, by adding a "RL'' suffix to the part number Polarity: Cathode Indicated by Polarity Band Marking: MUR105, MUR110, MUR115, MUR120, MUR130, MUR140, MUR160 MAXIMUM RATINGS AXIAL LEAD CASE 59-04 PLASTIC MARKING DIAGRAM MUR1xx MUR1 = Device Code xx = Specific Device Code Please See the Table on the Following Page ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 325 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 5 324 Publication Order Number: MUR120/D MUR120 Series MAXIMUM RATINGS MUR Symbol 105 110 115 120 130 140 160 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 150 200 300 400 600 Volts Average Rectified Forward Current (Square Wave Mounting Method #3 Per Note 2.) IF(AV) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM 35 Amps TJ, Tstg 65 to +175 C RJA See Note 2. C/W Rating Operating Junction Temperature and Storage Temperature 1.0 @ TA = 130C 1.0 @ TA = 120C Amps THERMAL CHARACTERISTICS Maximum Thermal Resistance, Junction to Ambient ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1.) (iF = 1.0 Amp, TJ = 150C) (iF = 1.0 Amp, TJ = 25C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 150C) (Rated dc Voltage, TJ = 25C) iR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amp/s) (IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 A) trr Maximum Forward Recovery Time (IF = 1.0 A, di/dt = 100 A/s, IREC to 1.0 V) tfr Volts 0.710 0.875 1.05 1.25 50 2.0 150 5.0 35 25 75 50 25 50 A ns 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. ORDERING INFORMATION Device Marking Package MUR105 MUR105 Axial Lead 1000 Units/Bag MUR105RL MUR105 Axial Lead 5000 Units/Tape & Reel MUR110 MUR110 Axial Lead 1000 Units/Bag MUR110RL MUR110 Axial Lead 5000 Units/Tape & Reel MUR115 MUR115 Axial Lead 1000 Units/Bag MUR115RL MUR115 Axial Lead 5000 Units/Tape & Reel MUR120 MUR120 Axial Lead 1000 Units/Bag MUR120RL MUR120 Axial Lead 5000 Units/Tape & Reel MUR130 MUR130 Axial Lead 1000 Units/Bag MUR130RL MUR130 Axial Lead 5000 Units/Tape & Reel MUR140 MUR140 Axial Lead 1000 Units/Bag MUR140RL MUR140 Axial Lead 5000 Units/Tape & Reel MUR160 MUR160 Axial Lead 1000 Units/Bag MUR160RL MUR160 Axial Lead 5000 Units/Tape & Reel http://onsemi.com 325 Shipping ns MUR120 Series MUR105, MUR110, MUR115, MUR120 -# "++/+,.++'- -# /+ +/+, /(%- /(%-, Figure 2. Typical Reverse Current* -=: 8JGK:H H=DLC 6G: INE>86A ;DG I=: =><=:HI KDAI6<: 9:K>8: >C I=: KDAI6<: <GDJE>C< -NE>86A G:K:GH: 8JGG:CI ;DG ADL:G KDAI6<: H:A:8I>DCH 86C 7: :HI>B6I:9 ;GDB I=:H: H6B: 8JGK:H >; /+ >H HJ;;>8>:CIAN 7:ADL G6I:9 /+ "/ /+ (+0+.++'-&), > "',-'-'(.,(+0+.++'-&), +- /+ +# 0 98 ,*.+ 0/ K "',-'-'(., /(%- /(%-, - &"'- -&)+-.+ Figure 1. Typical Forward Voltage -# " )"-"/R%( )$ " / -# 98 )"-'E )/ /+ )(0+",,")-"('0--, Figure 3. Current Derating (Mounting Method #3 Per Note 1) ,*.+ 0/ "/ /+ (+0+ .++'- &), /+ +/+, /(%- /(%-, Figure 4. Power Dissipation Figure 5. Typical Capacitance http://onsemi.com 326 MUR120 Series MUR130, MUR140, MUR160 "++/+,.++'- -# -# /+ +/+, /(%- /(%-, Figure 7. Typical Reverse Current* -=: 8JGK:H H=DLC 6G: INE>86A ;DG I=: =><=:HI KDAI6<: 9:K>8: >C I=: KDAI6<: <GDJE>C< -NE>86A G:K:GH: 8JGG:CI ;DG ADL:G KDAI6<: H:A:8I>DCH 86C 7: :HI>B6I:9 ;GDB I=:H: H6B: 8JGK:H >; /+ >H HJ;;>8>:CIAN 7:ADL G6I:9 /+ "/ /+ (+0+.++'-&), > "',-'-'(.,(+0+.++'-&), +- /+ +# 0 98 K "',-'-'(., /(%- /(%-, ,*.+ 0/ - &"'- -&)+-.+ Figure 6. Typical Forward Voltage -# -# )"-"/ %( " " )"-'E )/ /+ )(0+",,")-"('0--, Figure 8. Current Derating (Mounting Method #3 Per Note 1) )$ 98 / ,*.+ 0/ "/ /+ (+0+ .++'- &), /+ +/+, /(%- /(%-, Figure 9. Power Dissipation Figure 10. Typical Capacitance http://onsemi.com 327 MUR120 Series NOTE 2. -- AMBIENT MOUNTING DATA Data shown for thermal resistance junction to ambient (RJA) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR RJA IN STILL AIR Mounting Method 1 2 RJA Lead Length, L 1/4 1/2 1/8 52 65 72 67 80 87 Units C/W C/W 50 C/W 3 MOUNTING METHOD 1 EEEEEEEEEEE EEEEEEEEEEE L L MOUNTING METHOD 2 EEEEEEEEEEEE EEEEEEEEEEEE L L Vector Pin Mounting EE EE EE EE EE EE EE MOUNTING METHOD 3 L = 3/8 Board Ground Plane P.C. Board with 1-1/2 X 1-1/2 Copper Surface http://onsemi.com 328 MUR1100E is a Preferred Device " 18(3 (&5,),(34 Ultrafast "E" Series with High Reverse Energy Capability http://onsemi.com . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: ULTRAFAST RECTIFIERS 1.0 AMPERES 800-1000 VOLTS * 10 mjoules Avalanche Energy Guaranteed * Excellent Protection Against Voltage Transients in Switching * * * * * * Inductive Load Circuits Ultrafast 75 Nanosecond Recovery Time 175C Operating Junction Temperature Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction Reverse Voltage to 1000 Volts Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 0.4 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead and Mounting Surface Temperature for Soldering Purposes: * * * * AXIAL LEAD CASE 059-04 PLASTIC 220C Max. for 10 Seconds, 1/16 from case Shipped in plastic bags, 1000 per bag Available Tape and Reeled, 5000 per reel, by adding a "RL'' suffix to the part number Polarity: Cathode Indicated by Polarity Band Marking: MUR180E, MUR1100E MARKING DIAGRAM MUR1x0E MUR1x0E = Device Code x = 8 or 10 MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MUR180E MUR1100E VRRM VRWM VR Average Rectified Forward Current (Note 1.) (Square Wave Mounting Method #3 Per Note 3.) IF(AV) Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM Operating Junction Temperature and Storage Temperature Range TJ, Tstg Value Unit V ORDERING INFORMATION 800 1000 Device 1.0 @ TA = 95C A 35 A October, 2000 - Rev. 0 Shipping MUR180E Axial Lead 1000 Units/Bag MUR180ERL Axial Lead 5000/Tape & Reel MUR1100E Axial Lead 1000 Units/Bag MUR1100ERL Axial Lead 5000/Tape & Reel C -65 to +175 Preferred devices are recommended choices for future use and best overall value. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. Semiconductor Components Industries, LLC, 2000 Package 329 Publication Order Number: MUR180E/D MUR180E, MUR1100E THERMAL CHARACTERISTICS Rating Symbol Value Unit RJA See Note 3. C/W Maximum Thermal Resistance, Junction to Ambient ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2.) (iF = 1.0 Amp, TJ = 150C) (iF = 1.0 Amp, TJ = 25C) vF Volts Maximum Instantaneous Reverse Current (Note 2.) (Rated dc Voltage, TJ = 100C) (Rated dc Voltage, TJ = 25C) iR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amp/s) (IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp) trr Maximum Forward Recovery Time (IF = 1.0 Amp, di/dt = 100 Amp/s, Recovery to 1.0 V) tfr 75 ns WAVAL 10 mJ 1.50 1.75 A 600 10 ns 100 75 Controlled Avalanche Energy (See Test Circuit in Figure 6) 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. http://onsemi.com 330 MUR180E, MUR1100E ELECTRICAL CHARACTERISTICS "++/+,.++'- -# /+ +/+, /(%- /(%-, Figure 2. Typical Reverse Current* -=: 8JGK:H H=DLC 6G: INE>86A ;DG I=: =><=:HI KDAI6<: 9:K>8: >C I=: <GDJE>C< -NE>86A G:K:GH: 8JGG:CI ;DG ADL:G KDAI6<: H:A:8I>DCH 86C 7: :HI>B6I:9 ;GDB I=:H: H6B: 8JGK:H >; /+ >H HJ;;>8>:CIAN 7:ADL G6I:9 /+ "/ /+ (+0+.++'-&), > "',-'-'(.,(+0+.++'-&), -# +- /+ +# 0 98 ,*.+ 0/ K "',-'-'(., /(%- /(%-, - &"'- -&)+-.+ Figure 1. Typical Forward Voltage " )"-"/R%( )$ " / -# )"-'E )/ /+ )(0+",,")-"('0--, Figure 3. Current Derating (Mounting Method #3 Per Note 1) 98 -# ,*.+ 0/ "/ /+ (+0+ .++'- &), /+ +/+, /(%- /(%-, Figure 4. Power Dissipation Figure 5. Typical Capacitance http://onsemi.com 331 MUR180E, MUR1100E / "% B! ("% /.- / " &+.+2 ,0"-! , " "% .- / I I Figure 6. Test Circuit BV 2 DUT W 1 LI LPK AVAL 2 BV -V DUT DD I Figure 7. Current-Voltage Waveforms The unclamped inductive switching circuit shown in Figure 6 was used to demonstrate the controlled avalanche capability of the new "E'' series Ultrafast rectifiers. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite EQUATION (1): I CH1 CH2 component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). The oscilloscope picture in Figure 8, shows the information obtained for the MUR8100E (similar die construction as the MUR1100E Series) in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 volts, and using Equation (2) the energy absorbed by the MUR8100E is approximately 20 mjoules. Although it is not recommended to design for this condition, the new "E'' series provides added protection against those unforeseen transient viruses that can produce unexplained random failures in unfriendly environments. 500V 50mV A 20s 953 V VERT !''% "% &), "/ !''% /. /(%-, "/ EQUATION (2): 2 W 1 LI LPK AVAL 2 1 CH1 ACQUISITIONS SAVEREF SOURCE CH2 217:33 HRS STACK REF REF Figure 8. Current-Voltage Waveforms http://onsemi.com 332 -"& , H "/ MUR180E, MUR1100E NOTE 3. -- AMBIENT MOUNTING DATA Data shown for thermal resistance junction to ambient (RJA) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR RJA IN STILL AIR Mounting Method 1 2 RJA Lead Length, L 1/4 1/2 1/8 52 65 72 67 80 87 Units C/W C/W 50 C/W 3 MOUNTING METHOD 1 L L EEEEEEEEEEE EEEEEEEEEEE MOUNTING METHOD 2 EEEEEEEEEEEE EEEEEEEEEEEE L L Vector Pin Mounting EE EE EE EE EE EE EE EE MOUNTING METHOD 3 L = 3/8 Board Ground Plane P.C. Board with 1-1/2 X 1-1/2 Copper Surface http://onsemi.com 333 Preferred Device " 18(3 (&5,),(3 . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: * * * * * http://onsemi.com Ultrafast 25 Nanosecond Recovery Times 175C Operating Junction Temperature Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction ULTRAFAST RECTIFIER 2 AMPERES 200 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 0.4 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead and Mounting Surface Temperature for Soldering Purposes: * * * * 220C Max. for 10 Seconds, 1/16 from case Shipped in plastic bags, 1000 per bag Available Tape and Reeled, 5000 per reel, by adding a "RL'' suffix to the part number Polarity: Cathode Indicated by Polarity Band Marking: MUR220 AXIAL LEAD CASE 059-04 PLASTIC MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 200 -- Volts Average Rectified Forward Current (Note 1.) (Square Wave Mounting Method #3 Per Note 3.) IF(AV) 2.0 @ TA = 90C Amps Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM 35 Amps TJ, Tstg -65 to +175 Operating Junction Temperature and Storage Temperature Range MARKING DIAGRAM MUR220 MUR220 = Device Code ORDERING INFORMATION C 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. Device Package Shipping MUR220 Axial Lead 1000 Units/Bag MUR220RL Axial Lead 5000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 334 Publication Order Number: MUR220/D MUR220 THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance, Junction to Ambient Symbol Value Unit RJA See Note 3. C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2.) (IF = 2.0 Amp, TJ = 150C) (IF = 2.0 Amp, TJ = 25C) vF Maximum Instantaneous Reverse Current (Note 2.) (Rated dc Voltage, TJ = 150C) (Rated dc Voltage, TJ = 25C) iR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amp/s) (IF = 0.5 Amp, IR = 1.0 Amp, IREC = 0.25 A) trr Maximum Forward Recovery Time (IF = 1.0 A, di/dt = 100 A/s, IREC to 1.0 V) tfr Volts 0.75 0.95 A 50 2.0 ns 35 25 25 ns 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. " "',-'-'(.,(+0+.++'-&), " "',-'-'(.,(+0+.++'-&), / / / "',-'-'(., /(%- /(%-, / "',-'-'(., /(%- /(%-, Figure 1. Maximum Forward Voltage Figure 2. Typical Forward Voltage http://onsemi.com 335 MUR220 "+ "++/+,.++'- /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 3. Maximum Reverse Current Figure 4. Typical Reverse Current 98 ,*.+ 0/ )/ /+ )(0+",,")-"('0--, "/ /+ (+0+.++'-&), ,*.+ 0/ 98 "/ /+ (+0+ .++'- &), Figure 5. Current Derating Figure 6. Power Dissipation -# /+ +/+, /(%- /(%-, Figure 7. Typical Capacitance http://onsemi.com 336 - &"'- -&)+-.+ )"-'E "++/+,.++'- "+ MUR220 NOTE 3. - AMBIENT MOUNTING DATA Data shown for thermal resistance junction to ambient (RJA) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR RJA IN STILL AIR Mounting Method 1 2 RJA Lead Length, L 1/8 1/4 1/2 52 65 72 67 80 87 Units C/W C/W 50 C/W 3 MOUNTING METHOD 1 EEEEEEEEEEE EEEEEEEEEEE L L MOUNTING METHOD 2 EEEEEEEEEEEE EEEEEEEEEEEE L L Vector Pin Mounting EE EE EE EE EE EE EE MOUNTING METHOD 3 L = 3/8 Board Ground Plane P.C. Board with 1-1/2 X 1-1/2 Copper Surface http://onsemi.com 337 Preferred Device " 18(3 (&5,),(3 . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: * * * * * http://onsemi.com Ultrafast Recovery Times 175C Operating Junction Temperature Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction ULTRAFAST RECTIFIER 2 AMPERES 400 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 0.4 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead and Mounting Surface Temperature for Soldering Purposes: * * * * 220C Max. for 10 Seconds, 1/16 from case Shipped in plastic bags, 1000 per bag Available Tape and Reeled, 5000 per reel, by adding a "RL'' suffix to the part number Polarity: Cathode Indicated by Polarity Band Marking: MUR240 AXIAL LEAD CASE 059-04 PLASTIC MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 400 - V Average Rectified Forward Current (Note 1.) (Square Wave Mounting Method #3 Per Note 3.) IF(AV) 2.0 @ TA = 85C A Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM 35 A Operating Junction Temperature and Storage Temperature Range MARKING DIAGRAM MUR240 MUR240 = Device Code ORDERING INFORMATION TJ, Tstg C -65 to +175 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. Device Package Shipping MUR240 Axial Lead 1000 Units/Bag MUR240RL Axial Lead 5000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 1 338 Publication Order Number: MUR240/D MUR240 THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance, Junction to Ambient Symbol Value Unit RJA See Note 3. C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2.) (IF = 2.0 Amp, TJ = 150C) (IF = 2.0 Amp, TJ = 25C) VF Maximum Instantaneous Reverse Current (Note 2.) (Rated dc Voltage, TJ = 150C) (Rated dc Voltage, TJ = 25C) IR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amp/s) trr Maximum Forward Recovery Time (IF = 1.0 A, di/dt = 100 A/s) trr Volts 0.95 1.15 A 150 5.0 ns 65 50 ns 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. 10 I , INSTANTANEOUS FORWARD CURRENT (AMPS) F IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 VF @ 175C 100C 25C 1.0 VF @ 175C 100C 25C 1.0 0.1 0.1 0.5 0.7 0.9 1.1 1.3 1.5 1.7 0.3 0.5 0.7 0.9 1.1 1.3 VF, INSTANTANEOUS VOLTAGE (VOLTS) VF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 1. Maximum Forward Current Figure 2. Typical Forward Current http://onsemi.com 339 1.5 MUR240 100 IR, REVERSE CURRENT ( A) IR, REVERSE CURRENT ( A) 1000 IR @ 175C 100 100C 10 25C 1.0 0.1 10 100C 1.0 0.1 25C 0.01 0.001 0 100 200 300 400 0 100 300 200 400 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Maximum Reverse Current Figure 4. Typical Reverse Current 5.0 4.0 3.0 2.0 98 SQUARE WAVE 1.0 0 0 100 50 150 200 TA, AMBIENT TEMPERATURE (C) PF(AV), AVERAGE POWER DISSIPATION (WATTS) IF(AV), AVERAGE FORWARD CURRENT (AMPS) IR @ 175C 2.5 SQUARE WAVE dc 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.5 2.0 3.0 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Power Dissipation 35 30 TJ = 25C 30 C, CAPACITANCE (pF) C, CAPACITANCE (pF) 25 20 15 10 5.0 TJ = 25C 25 20 15 10 5.0 0 0 0 10 20 30 40 0 50 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 7. Typical Capacitance Figure 8. Maximum Capacitance http://onsemi.com 340 50 MUR240 NOTE 3. - AMBIENT MOUNTING DATA Data shown for thermal resistance junction to ambient (RJA) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR RJA IN STILL AIR Mounting Method 1 2 RJA Lead Length, L 1/4 1/2 1/8 52 65 72 67 80 87 Units C/W C/W 50 C/W 3 MOUNTING METHOD 1 L L EEEEEEEEEEE MOUNTING METHOD 2 EEEEEEEEEEEE EEEEEEEEEEEE L L Vector Pin Mounting EE EE EE EE EE EE EE MOUNTING METHOD 3 L = 3/8 Board Ground Plane P.C. Board with 1-1/2 X 1-1/2 Copper Surface http://onsemi.com 341 Preferred Device " 18(3 (&5,),(3 . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: * * * * * http://onsemi.com Ultrafast 50 Nanosecond Recovery Times 175C Operating Junction Temperature Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction ULTRAFAST RECTIFIER 2 AMPERES 600 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 0.4 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead and Mounting Surface Temperature for Soldering Purposes: * * * * 220C Max. for 10 Seconds, 1/16 from case Shipped in plastic bags, 1000 per bag Available Tape and Reeled, 5000 per reel, by adding a "RL'' suffix to the part number Polarity: Cathode Indicated by Polarity Band Marking: MUR260 AXIAL LEAD CASE 059-04 PLASTIC MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 600 - Volts Average Rectified Forward Current (Note 1.) (Square Wave Mounting Method #3 Per Note 3.) IF(AV) 2.0 @ TA = 60C Amps Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM 35 Amps Operating Junction Temperature and Storage Temperature Range MARKING DIAGRAM MUR260 MUR260 = Device Code ORDERING INFORMATION TJ, Tstg C -65 to +175 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. Device Package Shipping MUR260 Axial Lead 1000 Units/Bag MUR260RL Axial Lead 5000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 1 342 Publication Order Number: MUR260/D MUR260 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RJA See Note 3. C/W Maximum Thermal Resistance, Junction to Ambient ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2.) (IF = 2.0 Amp, TJ = 150C) (IF = 2.0 Amp, TJ = 25C) vF Maximum Instantaneous Reverse Current (Note 2.) (Rated dc Voltage, TJ = 150C) (Rated dc Voltage, TJ = 25C) iR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amp/s) (IF = 0.5 Amp, IR = 1.0 Amp, IREC = 0.25 A) trr Maximum Forward Recovery Time (IF = 1.0 A, di/dt = 100 A/s, IREC to 1.0 V) tfr Volts 1.15 1.35 A 150 5.0 ns 75 50 50 ns 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. > "',-'-'(.,(+0+.++'-&), " "',-'-'(.,(+0+.++'-&), / / / "',-'-'(., /(%- /(%-, / "',-'-'(., /(%- /(%-, Figure 1. Maximum Forward Voltage Figure 2. Typical Forward Voltage http://onsemi.com 343 MUR260 -# "+ "++/+,.++'- "++/+,.++'- 98 ,*.+ 0/ )/ /+ )(0+",,")-"('0--, ,*.+ 0/ "/ /+ (+0+ .++'- &), Figure 5. Current Derating Figure 6. Power Dissipation -# 98 - &"'- -&)+-.+ )"-'E "/ /+ (+0+.++'-&), Figure 4. Typical Reverse Current /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 3. Maximum Reverse Current /+ +/+, /(%- /(%-, Figure 7. Typical Capacitance http://onsemi.com 344 MUR260 NOTE 3. -- AMBIENT MOUNTING DATA Data shown for thermal resistance junction to ambient (RJA) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR RJA IN STILL AIR Mounting Method 1 2 RJA Lead Length, L 1/8 1/4 1/2 52 65 72 67 80 87 Units C/W C/W 50 C/W 3 MOUNTING METHOD 1 EEEEEEEEEEE EEEEEEEEEEE L L MOUNTING METHOD 2 EEEEEEEEEEEE EEEEEEEEEEEE L L Vector Pin Mounting EE EE EE EE EE EE EE MOUNTING METHOD 3 L = 3/8 Board Ground Plane P.C. Board with 1-1/2 X 1-1/2 Copper Surface http://onsemi.com 345 Preferred Device " 18(3 (&5,),(3 Ultrafast "E" Series with High Reverse Energy Capability http://onsemi.com . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: ULTRAFAST RECTIFIER 2 AMPERES 1000 VOLTS * 20 mjoules Avalanche Energy Guaranteed * Excellent Protection Against Voltage Transients in Switching * * * * * Inductive Load Circuits Ultrafast 75 Nanosecond Recovery Time 175C Operating Junction Temperature Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction Mechanical Characteristics * Case: Epoxy, Molded * Weight: 0.4 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * * Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 220C Max. for 10 Seconds, 1/16 from case Shipped in plastic bags, 1000 per bag Available Tape and Reeled, 5000 per reel, by adding a "RL'' suffix to the part number Polarity: Cathode Indicated by Polarity Band Marking: MUR2100E AXIAL LEAD CASE 059-04 PLASTIC MARKING DIAGRAM MUR2100E MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 1000 Volts Average Rectified Forward Current (Note 1.) (Square Wave Mounting Method #3 Per Note 3.) IF(AV) 2.0 @ TA = 35C Amps Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM 35 Amps Operating Junction Temperature and Storage Temperature Range TJ, Tstg October, 2000 - Rev. 1 ORDERING INFORMATION Device Package Shipping MUR2100E Axial Lead 1000 Units/Bag MUR2100ERL Axial Lead 5000/Tape & Reel C -65 to +175 Preferred devices are recommended choices for future use and best overall value. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. Semiconductor Components Industries, LLC, 2000 MUR2100E = Device Code 346 Publication Order Number: MUR2100E/D MUR2100E THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance, Junction to Ambient Symbol Value Unit RJA See Note 3. C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2.) (IF = 2.0 Amp, TJ = 150C) (IF = 2.0 Amp, TJ = 25C) vF Volts Maximum Instantaneous Reverse Current (Note 2.) (Rated dc Voltage, TJ = 100C) (Rated dc Voltage, TJ = 25C) iR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amp/s) (IF = 0.5 Amp, IR = 1.0 Amp, IREC = 0.25 A) trr Maximum Forward Recovery Time (IF = 1.0 A, di/dt = 100 A/s, IREC to 1.0 V) tfr 75 ns WAVAL 10 mJ 1.75 2.20 A 600 10 ns 100 75 Controlled Avalanche Energy (See Test Circuit in Figure 6) 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. " "',-'-'(.,(+0+.++'-&), " "',-'-'(.,(+0+.++'-&), / / / "',-'-'(., /(%- /(%-, / "',-'-'(., /(%- /(%-, Figure 1. Maximum Forward Voltage Figure 2. Typical Forward Voltage http://onsemi.com 347 MUR2100E /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 4. Typical Reverse Current 98 ,*.+ 0/ Figure 3. Maximum Reverse Current )/ /+ )(0+",,")-"('0--, "/ /+ (+0+.++'-&), "+ "++/+,.++'- "+ 98 "/ /+ (+0+ .++'- &), Figure 5. Current Derating Figure 6. Power Dissipation -# /+ +/+, /(%- /(%-, Figure 7. Typical Capacitance http://onsemi.com 348 ,*.+ 0/ - &"'- -&)+-.+ )"-'E "++/+,.++'- MUR2100E NOTE 3. -- AMBIENT MOUNTING DATA Data shown for thermal resistance junction to ambient (RJA) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR RJA IN STILL AIR Mounting Method 1 2 RJA Lead Length, L 1/4 1/2 1/8 52 65 72 67 80 87 Units C/W C/W 50 C/W 3 MOUNTING METHOD 1 L L EEEEEEEEEEE MOUNTING METHOD 2 EEEEEEEEEEEE EEEEEEEEEEEE L L Vector Pin Mounting EE EE EE EE EE EE EE MOUNTING METHOD 3 L = 3/8 Board Ground Plane P.C. Board with 1-1/2 X 1-1/2 Copper Surface http://onsemi.com 349 MUR420 and MUR460 are Preferred Devices 8,5&+/1'( 18(3 (&5,),(34 . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: * * * * * * Ultrafast 25, 50 and 75 Nanosecond Recovery Times 175C Operating Junction Temperature Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction Reverse Voltage to 600 Volts http://onsemi.com ULTRAFAST RECTIFIERS 4.0 AMPERES 50-600 VOLTS Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.1 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal AXIAL LEAD CASE 267-03 STYLE 1 Leads are Readily Solderable * Lead and Mounting Surface Temperature for Soldering Purposes: * * * * 220C Max. for 10 Seconds, 1/16 from case Shipped in plastic bags, 5,000 per bag Available Tape and Reeled, 1500 per reel, by adding a "RL'' suffix to the part number Polarity: Cathode indicated by Polarity Band Marking: MUR405, MUR410, MUR415, MUR420, MUR440, MUR460 MARKING DIAGRAM MUR4xx MUR4xx = Device Code xx = 05, 10, 15, 20, 40, 60 ORDERING INFORMATION Device MAXIMUM RATINGS Please See the Table on the Following Page Package Shipping MUR405 Axial Lead 5000 Units/Bag MUR405RL Axial Lead 1500/Tape & Reel MUR410 Axial Lead 5000 Units/Bag MUR410RL Axial Lead 1500/Tape & Reel MUR415 Axial Lead 5000 Units/Bag MUR415RL Axial Lead 1500/Tape & Reel MUR420 Axial Lead 5000 Units/Bag MUR420RL Axial Lead 1500/Tape & Reel MUR440 Axial Lead 5000 Units/Bag MUR440RL Axial Lead 1500/Tape & Reel MUR460 Axial Lead 5000 Units/Bag MUR460RL Axial Lead 1500/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 4 350 Publication Order Number: MUR420/D MUR405, MUR410, MUR415, MUR420, MUR440, MUR460 MAXIMUM RATINGS MUR Symbol 405 410 415 420 440 460 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 150 200 400 600 Volts Average Rectified Forward Current (Square Wave) (Mounting Method #3 Per Note 2.) IF(AV) 4.0 @ TA = 80C 4.0 @ TA = 40C Amps Nonrepetitive Peak Surge Current (Surge applied at rated load conditions, half wave, single phase, 60 Hz) IFSM 125 70 Amps Rating Operating Junction Temperature & Storage Temperature TJ, Tstg 65 to +175 C RJA See Note 2. C/W THERMAL CHARACTERISTICS Maximum Thermal Resistance, Junction to Ambient ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1.) (iF = 3.0 Amps, TJ = 150C) (iF = 3.0 Amps, TJ = 25C) (iF = 4.0 Amps, TJ = 25C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 150C) (Rated dc Voltage, TJ = 25C) iR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amp/s) (IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp) trr Maximum Forward Recovery Time (IF = 1.0 A, di/dt = 100 A/s, Recovery to 1.0 V) tfr 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. http://onsemi.com 351 Volts 0.710 0.875 0.890 1.05 1.25 1.28 150 5.0 250 10 35 25 75 50 25 50 A ns ns MUR405, MUR410, MUR415, MUR420, MUR440, MUR460 MUR405, MUR410, MUR415, MUR420 "++/+,.++'- Figure 2. Typical Reverse Current -# +6I:9 /+ +# 0 98 ,*.+ 0/ K "',-'-'(., /(%- /(%-, - &"'- -&)+-.+ Figure 1. Typical Forward Voltage Figure 3. Current Derating (Mounting Method #3 Per Note 1) 6E68>I>K: ")$ "/ %D69 -# )"-'E 98 ,*.+0/ /+ +/+, /(%- /(%-, )/ /+ )(0+",,")-"('0--, -# "/ /+ (+0+.++'-&), > "',-'-'(.,(+0+.++'-&), /+ +/+, /(%- /(%-, "/ /+ (+0+ .++'- &), Figure 4. Power Dissipation Figure 5. Typical Capacitance http://onsemi.com 352 MUR405, MUR410, MUR415, MUR420, MUR440, MUR460 MUR440, MUR460 "++/+,.++'- -# /+ +/+, /(%- /(%-, Figure 7. Typical Reverse Current 98 ,*.+ 0/ Figure 8. Current Derating (Mounting Method #3 Per Note 1) 98 6E68>I>K: ")$ "/ %D69 K "',-'-'(., /(%- /(%-, ,*.+0/ +6I:9 /+ +# 0 Figure 6. Typical Forward Voltage - &"'- -&)+-.+ )"-'E )/ /+ )(0+",,")-"('0--, "/ /+ (+0+.++'-&), > "',-'-'(.,(+0+.++'-&), -# -# "/ /+ (+0+ .++'- &), Figure 9. Power Dissipation /+ +/+, /(%- /(%-, Figure 10. Typical Capacitance http://onsemi.com 353 MUR405, MUR410, MUR415, MUR420, MUR440, MUR460 NOTE 2. -- AMBIENT MOUNTING DATA Data shown for thermal resistance junction-to-ambient (RJA) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR RJA IN STILL AIR Mounting Method 1 2 RJA Lead Length, L (IN) 1/8 1/4 1/2 3/4 55 50 51 53 63 58 59 61 Units C/W C/W 28 C/W 3 MOUNTING METHOD 1 P.C. Board Where Available Copper Surface area is small. EEEEEEEEEEE EEEEEEEEEEE L L MOUNTING METHOD 2 Vector Push-In Terminals T-28 L L EEEEEEEEEEEE MOUNTING METHOD 3 P.C. Board with 1-1/2 x 1-1/2 Copper Surface EE EE EE EE EE EE EE EE L = 1/2 Board Ground Plane http://onsemi.com 354 " 18(3 (&5,),(34 Ultrafast "E'' Series with High Reverse Energy Capability http://onsemi.com . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: ULTRAFAST RECTIFIER 4.0 AMPERES 800-1000 VOLTS * 20 mJ Avalanche Energy Guaranteed * Excellent Protection Against Voltage Transients in Switching * * * * * * Inductive Load Circuits Ultrafast 75 Nanosecond Recovery Time 175C Operating Junction Temperature Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction Reverse Voltage to 1000 Volts Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.1 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead and Mounting Surface Temperature for Soldering Purposes: 220C Max. for 10 Seconds, 1/16 from case * Shipped in plastic bags, 5,000 per bag * Available Tape and Reeled, 1500 per reel, by adding a "RL'' suffix to * * AXIAL LEAD CASE 267-03 STYLE 1 the part number Polarity: Cathode indicated by Polarity Band Marking: MUR480E, MUR4100E MARKING DIAGRAM MAXIMUM RATINGS MUR4x0E Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MUR480E MUR4100E VRRM VRWM VR Average Rectified Forward Current (Square Wave) (Mounting Method #3 Per Note 2.) IF(AV) Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Operating Junction and Storage Temperature Range Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 0 Value Unit V MUR4x0E = Device Code x = 8 or 10 4.0 @ TA = 35C A ORDERING INFORMATION 70 A 800 1000 Device TJ, Tstg C -65 to +175 355 Package Shipping MUR480E Axial Lead 5000 Units/Bag MUR480ERL Axial Lead 1500/Tape & Reel MUR4100E Axial Lead 5000 Units/Bag MUR4100ERL Axial Lead 1500/Tape & Reel Publication Order Number: MUR480E/D MUR480E, MUR4100E THERMAL CHARACTERISTICS Rating Maximum Thermal Resistance, Junction to Case Symbol Value Unit RJC See Note 2. C/W Symbol Max Unit ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 1.) (iF = 3.0 Amps, TJ = 150C) (iF = 3.0 Amps, TJ = 25C) (iF = 4.0 Amps, TJ = 25C) vF Volts Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 100C) (Rated dc Voltage, TJ = 25C) iR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amp/s) (IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp) trr Maximum Forward Recovery Time (IF = 1.0 Amp, di/dt = 100 Amp/s, Recovery to 1.0 V) tfr 75 ns WAVAL 20 mJ 1.53 1.75 1.85 A 900 25 ns 100 75 Controlled Avalanche Energy (See Test Circuit in Figure 6. ) 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. http://onsemi.com 356 MUR480E, MUR4100E MUR480E, MUR4100E -# "++/+,.++'- -=: 8JGK:H H=DLC 6G: INE>86A ;DG I=: =><=:HI KDAI6<: 9:K>8: >C I=: KDAI6<: <GDJE>C< -NE>86A G:K:GH: 8JGG:CI ;DG ADL:G KDAI6<: H:A:8I>DCH 86C 7: :HI>B6I:9 ;GDB I=:H: H6B: 8JGK:H >; /+ >H HJ;;>8>:CIAN 7:ADL G6I:9 /+ /+ +/+, /(%- /(%-, Figure 2. Typical Reverse Current* 6E68>I>K: ")$ "/ %D69 98 ,*.+0/ ,*.+ 0/ -# 98 Figure 3. Current Derating (Mounting Method #3 Per Note 1) K "',-'-'(., /(%- /(%-, -# +6I:9 /+ +# 0 Figure 1. Typical Forward Voltage - &"'- -&)+-.+ )"-'E )/ /+ )(0+",,")-"('0--, -# "/ /+ (+0+.++'-&), > "',-'-'(.,(+0+.++'-&), "/ /+ (+0+ .++'- &), Figure 4. Power Dissipation /+ +/+, /(%- /(%-, Figure 5. Typical Capacitance http://onsemi.com 357 MUR480E, MUR4100E / "% ! ("% /./ " &+.+2 ,0"-! .- , " "% / I Figure 6. Test Circuit BV 2 DUT W 1 LI LPK AVAL 2 BV -V DUT DD I I Figure 7. Current-Voltage Waveforms The unclamped inductive switching circuit shown in Figure 6. was used to demonstrate the controlled avalanche capability of the new "E'' series Ultrafast rectifiers. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite EQUATION (1): I CH1 CH2 component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). The oscilloscope picture in Figure 8. , shows the information obtained for the MUR8100E (similar die construction as the MUR4100E Series) in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 volts, and using Equation (2) the energy absorbed by the MUR8100E is approximately 20 mjoules. Although it is not recommended to design for this condition, the new "E'' series provides added protection against those unforeseen transient viruses that can produce unexplained random failures in unfriendly environments. 500V 50mV A 20s 953 V VERT !''% "% &), "/ !''% /. /(%-, "/ EQUATION (2): 2 W 1 LI LPK AVAL 2 -"& , H "/ 1 CH1 ACQUISITIONS SAVEREF SOURCE CH2 217:33 HRS STACK REF REF Figure 8. Current-Voltage Waveforms http://onsemi.com 358 MUR480E, MUR4100E NOTE 2. - AMBIENT MOUNTING DATA Data shown for thermal resistance junction-to-ambient (RJA) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR RJA IN STILL AIR Mounting Method 1 2 RJA Lead Length, L (IN) 1/8 1/4 1/2 3/4 50 51 53 55 58 59 61 63 Units C/W C/W 28 C/W 3 MOUNTING METHOD 1 P.C. Board Where Available Copper Surface area is small. EEEEEEEEEEE EEEEEEEEEEE L L MOUNTING METHOD 2 Vector Push-In Terminals T-28 EEEEEEEEEEEE EEEEEEEEEEEE L L MOUNTING METHOD 3 P.C. Board with 1-1/2 x 1-1/2 Copper Surface EE EE EE EE EE EE EE EE L = 1/2 Board Ground Plane http://onsemi.com 359 Preferred Device " 18(3 (&5,),(3 For Use As A Damper Diode In High and Very High Resolution Monitors http://onsemi.com The MUR5150E is a state-of-the-art Ultrafast Power Rectifier specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performance of the MUR5150E is fully realized when paired with the appropriate 1500 V SCANSWITCH Bipolar Power Transistor. * * * * * SCANSWITCH RECTIFIER 5.0 AMPERES 1500 VOLTS 1500 V Blocking Voltage 20 mjoules Avalanche Energy Guaranteed Peak Transient Overshoot Voltage Specified, 17 Volts (typical) Forward Recovery Time Specified, 175 ns (typical) Epoxy Meets UL94, VO at 1/8 Mechanical Characteristics 4 * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: U5150E 1 3 TO-220AC CASE 221B STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 1500 V Average Rectified Forward Current (Rated VR, TC = 100C) IF(AV) 5.0 A Peak Repetitive Forward Current (Rated VR, Square Wave, Per Leg 20 kHz, TC = 100C) IFRM 10 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A MARKING DIAGRAM U5150E U5150E = Device Code Operating Junction and Storage Temperature Range TJ, Tstg -65 to +125 C Controlled Avalanche Energy WAVAL 20 mJ ORDERING INFORMATION Device Package Shipping MUR5150E TO-220 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 360 Publication Order Number: MUR5150E/D MUR5150E THERMAL CHARACTERISTICS Characteristic Thermal Resistance -- Junction to Case Symbol Value Unit RJC 2.0 C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 1.) (iF = 2.0 Amps, TJ = 25C) (iF = 5.0 Amps, TJ = 25C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 125C) (Rated dc Voltage, TJ = 25C) iR Maximum Reverse Recovery Time (IF = 1.0 Amps, di/dt = 50 Amps/s) Maximum Forward Recovery Time (IF = 6.5 Amps, di/dt = 12 Amps/s) Peak Transient Overshoot Voltage Typ Max Unit Volts 1.7 2.0 2.0 2.4 100 10 500 50 trr 130 175 tfr 175 225 ns VRFM 17 20 Volts A ns 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% TYPICAL ELECTRICAL CHARACTERISTICS " + +/+,%$ .++'-SR > "',-'-'(.,(+0+.++'-&), -# -# K "',-'-'(., /(%- /(%-, -# ,*.+ 0/ 98 $ $ $ $ /+ +/+, /(%- /(%-, Figure 2. Typical Reverse Leakage Current "/+ (+0+.++'-&), / )/+ )(0+",,")-"('0--, / Figure 1. Typical Forward Voltage $ "/ / (+0+ .++'- &), +- /+ ))%" +# 0 ,*.+ 0/ Figure 3. Forward Power Dissipation - , -&)+-.+ Figure 4. Current Derating Case http://onsemi.com 361 98 MUR5150E TYPICAL ELECTRICAL CHARACTERISTICS -2)"% )"-' / E @!O ; &!O - )"-'E /+ +/+, /(%- /(%-, Figure 5. Typical Capacitance - ++ +/+,+(/+2-"&CH /+ / 9> 9I H H H H " (+0+ .++'- &), ,-(+ +(/+2 !+ +/+, +(/+2 -"& Figure 6. Typical Reverse Switching Characteristics http://onsemi.com 362 * ++ ,-(++(/+2!+ C Preferred Device " 18(3 (&5,),(3 . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: http://onsemi.com * Ultrafast 35 Nanosecond Recovery Time * 175C Operating Junction Temperature * Popular TO-220 Package ULTRAFAST RECTIFIER 6.0 AMPERES 200 VOLTS Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead Temperature for Soldering Purposes: * * 260C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: U620 4 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 200 V Average Rectified Forward Voltage (Rated VR, TC = 130C) Per Diode Total Device IF(AV) Peak Repetitive Forward Current per Diode Leg (Rated VR, Square Wave, 20 kHz, TC = 130C) IFRM 6.0 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 75 A Operating Junction and Storage Temperature Range A 3.0 6.0 1 2 3 TO-220AB CASE 221A PLASTIC MARKING DIAGRAM TJ, Tstg C -65 to +175 U620 U620 = Device Code ORDERING INFORMATION Device Package Shipping MUR620CT TO-220 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 363 Publication Order Number: MUR620CT/D MUR620CT THERMAL CHARACTERISTICS (Per Diode Leg) Rating Thermal Resistance, Junction to Case Symbol Typical Maximum Unit RJC 5.0-6.0 7.0 C/W 0.80 0.94 0.895 0.975 2.0-10 0.01-3.0 250 5.0 20-30 35 ELECTRICAL CHARACTERISTICS (Per Diode Leg) Instantaneous Forward Voltage (Note 1.) (iF = 3.0 Amps, TC = 150C) (iF = 3.0 Amps, TC = 25C) vF Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 150C) (Rated dc Voltage, TC = 25C) iR Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amps/s) trr Volts A ns " ++/+,.++'-SR > "',-'-'(.,(+0+.++'-&), 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. -# -# K "',-'-'(., (+0+ /(%- /(%-, /+ +/+, /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current http://onsemi.com 364 "/ /+ (+0+.++'-&), +6I:9 /+ EEA>:9 ,*.+ 0/ - , -&)+-.+ 98 ,*.+ 0/ 98 ,*.+ 0/ +# 0 ;G:: 6>G CD =:6I H>C@ Figure 4. Total Device Current Derating, Ambient ,*.+ 0/ - &"'- -&)+-.+ +# 0 L>I= 6 INE>86A -( =:6I H>C@ Figure 3. Total Device Current Derating, Case )//+ )(0+",,")-"('0--, " //+ (+0+.++'-&), MUR620CT "/ /+ (+0+ .++'- &), Figure 5. Power Dissipation http://onsemi.com 365 " 1)5 (&17(3: 18(3 (&5,),(3 Plastic TO-220 Package Designed for use as free wheeling diodes in variable speed motor control applications and switching power supplies. These state-of-the-art devices have the following features: http://onsemi.com * Soft Recovery with Guaranteed Low Reverse Recovery Charge * * * * * * SOFT RECOVERY POWER RECTIFIER 8.0 AMPERES 600 VOLTS (QRR) and Peak Reverse Recovery Current (IRRM) 150C Operating Junction Temperature Popular TO-220 Package Epoxy meets UL94, VO @ 1/8 Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction Mechanical Characteristics: * Case: Molded Epoxy * Weight: 1.9 Grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal 4 Leads Readily Solderable * Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds * Shipped in 50 Units per Plastic Tube * Marking: MSR860 1 3 MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 600 V IO 8.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 125C) IFRM 16 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A Tstg, TC -65 to +150 C TJ -65 to +150 C Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 125C) Storage/Operating Case Temperature Range Operating Junction Temperature Range MARKING DIAGRAM MSR860 MSR860 = Device Code Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 ORDERING INFORMATION Device THERMAL CHARACTERISTICS Thermal Resistance - Junction-to-Case Thermal Resistance - Junction-to-Ambient TO-220AC CASE 221B STYLE 1 RJC RJA 1.6 72.8 C/W 366 MSR860 Package Shipping TO-220 50 Units/Rail Publication Order Number: MSR860/D MSR860 ELECTRICAL CHARACTERISTICS Characteristic Symbol Maximum a u Instantaneous s a a eous Forward o a d Voltage o age (Note ( o e 1.)) (IF = 8.0 A) Typical VF Maximum a u Instantaneous s a a eous Reverse e e se Current Cu e (VR = 600 V) Typical IR Maximum a u Reverse e e se Recovery eco e y Time e ((Note o e 2.)) (VR = 400 V, IF = 8.0 A, di/dt = 200 A/s) Typical trr Value Unit TJ = 25C TJ = 150C 1.7 1.4 1.3 1.1 TJ = 25C TJ = 150C 10 2.0 1000 80 TJ = 25C TJ = 125C 120 95 190 125 V A nss Typical Recovery Softness Factor (VR = 400 V, IF = 8.0 A, di/dt = 200 A/s) s = tb/ta 2.5 3.0 Maximum Peak Reverse Recovery Current (VR = 400 V, IF = 8.0 A, di/dt = 200 A/s) IRRM 5.8 8.3 A Maximum Reverse Recovery Charge (VR = 400 V, IF = 8.0 A, di/dt = 200 A/s) QRR 350 700 nC 1. Pulse Test: Pulse Width 380 s, Duty Cycle 2% 2. TRR measured projecting from 25% of IRRM to zero current TYPICAL ELECTRICAL CHARACTERISTICS "+ +/+,.++'- -# -# /+ +/+, /(%- /(%-, Figure 2. Typical Reverse Current "/ /+ (+0+.++'-&), ""',-'-'(.,(+0+.++'-&), 98 ,*.+ 0/ +- /+ ))%" / (+0+ /(%- +() /(%-, - , -&)+-.+ Figure 1. Typical Forward Voltage Figure 3. Current Derating, Case http://onsemi.com 367 MSR860 98 ,*.+ 0/ +- /+ ))%" - &"'- -&)+-.+ )/ /+ )(0+",,")-"('0--, "/ /+ (+0+.++'-&), TYPICAL ELECTRICAL CHARACTERISTICS ,*.+ 0/ -# "/ /+ (+0+ .++'- &), Figure 4. Current Derating, Ambient I GG +/+,+(/+2-"&CH I GG +/+,+(/+2-"&CH Figure 5. Power Dissipation -# /+ / " " -# /+ / 9" 9I , -# /+ / 9" 9I , "++&)$+/+,+(/+2.++'-&), " Figure 7. Typical Reverse Recovery Time 9" 9I , Figure 6. Typical Reverse Recovery Time " ++& )$+/+,+(/+2.++'-&), 98 " -# /+ / 9" 9I , Figure 9. Typical Peak Reverse Recovery Current Figure 8. Typical Peak Reverse Recovery Current http://onsemi.com 368 MSR860 TYPICAL ELECTRICAL CHARACTERISTICS * ++ +/+,+(/+2!+ C * ++ +/+,+(/+2!+ C " -# /+ / " -# /+ / 9" 9I , Figure 11. Typical Reverse Recovery Charge Figure 10. Typical Reverse Recovery Charge " ( ,0"-!"' (%(,,,# ( ,0"-!"' (%(,,,# 9" 9I , -# /+ / 9A 9I , " -# /+ / 9" 9I , Figure 13. Typical Switching Off Losses Figure 12. Typical Switching Off Losses GI-+',"'--!+&%+,)(', '(+&%"3 )E@ I ,"' % ).%, I .-2 2% I I I -"& BH Figure 14. Thermal Response http://onsemi.com 369 3#I GI +# +# 0 &1 .+/, ))%2 (+ )(0+ ).%, -+"' ,!(0' + -"& - I -#E@ - )E@ 3#I Preferred Devices " 18(3 (&5,),(34 . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: * * * * * * * * http://onsemi.com Ultrafast 25, 50 and 75 Nanosecond Recovery Time 175C Operating Junction Temperature Popular TO-220 Package Epoxy Meets UL94, VO @ 1/8 Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction Reverse Voltage to 600 Volts ULTRAFAST RECTIFIERS 8.0 AMPERES 50-600 VOLTS Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead Temperature for Soldering Purposes: * * 4 MARKING DIAGRAM 260C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: U805, U810, U815, U820, U840, U860 U8xx MAXIMUM RATINGS 1 Please See the Table on the Following Page 3 CASE 221B TO-220AC PLASTIC U8xx = Device Code xx = 05, 10, 15, = 20, 40 or 60 ORDERING INFORMATION Device Package Shipping MUR805 TO-220 50 Units/Rail MUR810 TO-220 50 Units/Rail MUR815 TO-220 50 Units/Rail MUR820 TO-220 50 Units/Rail MUR840 TO-220 50 Units/Rail MUR860 TO-220 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 4 370 Publication Order Number: MUR820/D MUR805, MUR810, MUR815, MUR820, MUR840, MUR860 MAXIMUM RATINGS MUR Symbol 805 810 815 820 840 860 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 150 200 400 600 Volts Average Rectified Forward Current Total Device, (Rated VR), TC = 150C IF(AV) 8.0 Amps Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz), TC = 150C IFM 16 Amps Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 100 Amps TJ, Tstg -65 to +175 C Rating Operating Junction Temperature and Storage Temperature Range THERMAL CHARACTERISTICS Maximum Thermal Resistance, Junction to Case RJC 3.0 C/W 2.0 ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1.) (iF = 8.0 Amps, TC = 150C) (iF = 8.0 Amps, TC = 25C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 150C) (Rated dc Voltage, TJ = 25C) iR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amps/s) (IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp) trr Volts 0.895 0.975 1.00 1.30 1.20 1.50 A 250 5.0 500 10 35 25 60 50 ns 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. http://onsemi.com 371 MUR805, MUR810, MUR815, MUR820, MUR840, MUR860 MUR805, MUR810, MUR815, MUR820 "++/+,.++'- Figure 2. Typical Reverse Current* -=: 8JGK:H H=DLC 6G: INE>86A ;DG I=: =><=:HI KDAI6<: 9:K>8: >C I=: <GDJE>C< -NE>86A G:K:GH: 8JGG:CI ;DG ADL:G KDAI6<: H:A:8I>DCH 86C 7: :HI>B6I:9 ;GDB I=:H: H6B: 8JGK:H >; /+ >H HJ;;>8>:CIAN 7:ADL G6I:9 /+ -# +- /+ ))%" 98 ,*.+ 0/ K "',-'-'(., /(%- /(%-, +# 0 +# 0 '( !- ,"'$ 98 ,*.+ 0/ 98 ,*.+ 0/ Figure 3. Current Derating, Case )/ /+ )(0+",,")-"('0--, - , -&)+-.+ Figure 1. Typical Forward Voltage "/ /+ (+0+.++'-&), /+ +/+, /(%- /(%-, "/ /+ (+0+.++'-&), > "',-'-'(.,(+0+.++'-&), -# -# ,*.+ 0/ 98 - &"'- -&)+-.+ "/ /+ (+0+ .++'- &), Figure 4. Current Derating, Ambient Figure 5. Power Dissipation http://onsemi.com 372 MUR805, MUR810, MUR815, MUR820, MUR840, MUR860 MUR840 "++/+,.++'- -# Figure 7. Typical Reverse Current* -=: 8JGK:H H=DLC 6G: INE>86A ;DG I=: =><=:HI KDAI6<: 9:K>8: >C I=: <GDJE>C< -NE>86A G:K:GH: 8JGG:CI ;DG ADL:G KDAI6<: H:A:8I>DCH 86C 7: :HI>B6I:9 ;GDB I=:H: H6B: 8JGK:H >; /+ >H HJ;;>8>:CIAN 7:ADL G6I:9 /+ "/ /+ (+0+.++'-&), ,*.+ 0/ 98 ,*.+ 0/ 98 ,*.+ 0/ Figure 8. Current Derating, Case 98 +- /+ ))%" Figure 6. Typical Forward Voltage - , -&)+-.+ +# 0 +# 0 '( !- ,"'$ K "',-'-'(., /(%- /(%-, /+ +/+, /(%- /(%-, "/ /+ (+0+.++'-&), )/ /+ )(0+",,")-"('0--, > "',-'-'(.,(+0+.++'-&), -# -# ,*.+ 0/ 98 - &"'- -&)+-.+ "/ /+ (+0+ .++'- &), Figure 9. Current Derating, Ambient Figure 10. Power Dissipation http://onsemi.com 373 MUR805, MUR810, MUR815, MUR820, MUR840, MUR860 MUR860 "++/+,.++'- -# /+ +/+, /(%- /(%-, Figure 12. Typical Reverse Current* -=: 8JGK:H H=DLC 6G: INE>86A ;DG I=: =><=:HI KDAI6<: 9:K>8: >C I=: <GDJE>C< -NE>86A G:K:GH: 8JGG:CI ;DG ADL:G KDAI6<: H:A:8I>DCH 86C 7: :HI>B6I:9 ;GDB I=:H: H6B: 8JGK:H >; /+ >H HJ;;>8>:CIAN 7:ADL G6I:9 /+ +# 0 +# 0 '( !- ,"'$ ,*.+ 0/ 98 ,*.+ 0/ 98 ,*.+ 0/ Figure 13. Current Derating, Case +- /+ ))%" Figure 11. Typical Forward Voltage 98 - , -&)+-.+ K "',-'-'(., /(%- /(%-, "/ /+ (+0+.++'-&), "/ /+ (+0+.++'-&), )/ /+ )(0+",,")-"('0--, > "',-'-'(.,(+0+.++'-&), -# ,*.+ 0/ 98 -# - &"'- -&)+-.+ "/ /+ (+0+ .++'- &), Figure 14. Current Derating, Ambient Figure 15. Power Dissipation http://onsemi.com 374 I ,"' % ).%, 3#I GI +# +# 0 &1 .+/, ))%2 (+ )(0+ ).%, -+"' ,!(0' + -"& - - )E@ I .-2 2% I I -#E@ - )E@ 3#I I -"& BH Figure 16. Thermal Response )"-'E GI-+',"'--!+&%+,",-''(+&%"3 MUR805, MUR810, MUR815, MUR820, MUR840, MUR860 &.+ &.+ &.+ -# /+ +/+, /(%- /(%-, Figure 17. Typical Capacitance http://onsemi.com 375 MUR8100E is a Preferred Device " 18(3 (&5,),(34 Ultrafast "E'' Series with High Reverse Energy Capability . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: * 20 mjoules Avalanche Energy Guaranteed * Excellent Protection Against Voltage Transients in Switching * * * * * * * * http://onsemi.com ULTRAFAST RECTIFIERS 8.0 AMPERES 800-1000 VOLTS Inductive Load Circuits Ultrafast 75 Nanosecond Recovery Time 175C Operating Junction Temperature Popular TO-220 Package Epoxy Meets UL94, VO @ 1/8 Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction Reverse Voltage to 1000 Volts 4 Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * 1 3 Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: U880E, U8100E TO-220AC CASE 221B PLASTIC MARKING DIAGRAM MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MUR880E MUR8100E VRRM VRWM VR Average Rectified Forward Current (Rated VR, TC = 150C) Total Device IF(AV) 8.0 A U8x0E = Device Code x = 8 or 10 Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 150C) IFM 16 A ORDERING INFORMATION Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Operating Junction and Storage Temperature Range Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 1 TJ, Tstg Value Unit U8x0E V 800 1000 100 A C -65 to +175 376 Device Package Shipping MUR8100E TO-220 50 Units/Rail MUR880E TO-220 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MUR8100E/D MUR8100E, MUR880E THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance, Junction to Case Symbol Value Unit RJC 2.0 C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 1.) (iF = 8.0 Amps, TC = 150C) (iF = 8.0 Amps, TC = 25C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 100C) (Rated dc Voltage, TC = 25C) iR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amps/s) (IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp) trr MUR880E MUR8100E Unit Volts 1.5 1.8 A 500 25 ns 100 75 Controlled Avalanche Energy (See Test Circuit in Figure 6. ) WAVAL 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. http://onsemi.com 377 20 mJ MUR8100E, MUR880E "+ +/+,.++'- -# -# /+ +/+, /(%- /(%-, Figure 2. Typical Reverse Current* "/ /+ (+0+.++'-&), " / /+ (+0+.++'-&), +# 0 +# 0 'D !:6I ,>C@ 98 ,*.+ 0/ 98 ,*.+ 0/ 98 ,*.+ 0/ Figure 3. Current Derating, Case Figure 1. Typical Forward Voltage +- /+ ))%" - , -&)+-.+ K "',-'-'(., /(%- /(%-, )/ /+ )(0+",,")-"('0--, >"',-'-'(.,(+0+.++'-&), -=: 8JGK:H H=DLC 6G: INE>86A ;DG I=: =><=:HI KDAI6<: 9:K>8: >C I=: KDAI6<: <GDJE>C< -NE>86A G:K:GH: 8JGG:CI ;DG ADL:G KDAI6<: H:A:8I>DCH 86C 7: :HI>B6I:9 ;GDB I=:H: H6B: 8JGK:H >; /+ >H HJ;;>8>:CIAN 7:ADL G6I:9 /+ -# ,*.+ 0/ 98 - &"'- -&)+-.+ "/ /+ (+0+ .++'- &), Figure 4. Current Derating, Ambient Figure 5. Power Dissipation http://onsemi.com 378 MUR8100E, MUR880E / "% ! ("% /./ " &+.+2 ,0"-! .- , " "% / I Figure 6. Test Circuit BV 2 DUT W 1 LI LPK AVAL 2 BV -V DUT DD I I Figure 7. Current-Voltage Waveforms breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). The oscilloscope picture in Figure 8. , shows the MUR8100E in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 volts, and using Equation (2) the energy absorbed by the MUR8100E is approximately 20 mjoules. Although it is not recommended to design for this condition, the new "E'' series provides added protection against those unforeseen transient viruses that can produce unexplained random failures in unfriendly environments. The unclamped inductive switching circuit shown in Figure 6. was used to demonstrate the controlled avalanche capability of the new "E'' series Ultrafast rectifiers. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in EQUATION (1): I 500V 50mV CH1 CH2 A 20s 953 V VERT !''% "% &), "/ !''% /. /(%-, "/ EQUATION (2): 2 W 1 LI LPK AVAL 2 -"& , H "/ 1 CH1 ACQUISITIONS SAVEREF SOURCE CH2 217:33 HRS STACK REF REF Figure 8. Current-Voltage Waveforms http://onsemi.com 379 )E@ I I .-2 2% I I ,"' % ).%, Figure 9. Thermal Response -# /+ +/+, /(%- /(%-, Figure 10. Typical Capacitance http://onsemi.com 380 3#I GI +# +# 0 &1 .+/, ))%2 (+ )(0+ ).%, -+"' ,!(0' + -"& - I -#E@ - )E@ 3#I I -"& BH )"-'E GI-+',"'--!+&%+,",-' '(+&%"3 MUR8100E, MUR880E Preferred Device # 18(3 (&5,),(3 . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: * * * * * * * * http://onsemi.com Ultrafast 28 Nanosecond Recovery Time 175C Operating Junction Temperature Popular TO-220 Package Epoxy Meets UL94, VO @ 1/8 High Temperature Glass Passivated Junction High Voltage Capability to 400 Volts Low Leakage Specified @ 150C Case Temperature Current Derating @ Both Case and Ambient Temperatures ULTRAFAST RECTIFIER 8.0 AMPERES 400 VOLTS Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * 4 Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: UH840 MAXIMUM RATINGS Rating 1 Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 400 V Average Rectified Forward Current (Rated VR, TC = 120C) Per Leg Total Device IF(AV) 2 3 TO-220AB CASE 221A PLASTIC A 4.0 8.0 MARKING DIAGRAM Peak Repetitive Forward Current per Diode Leg (Rated VR, Square Wave, 20 kHz, TC = 120C) IFM 16 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A Controlled Avalanche Energy WAVAL 20 mJ Operating Junction and Storage Temperature Range TJ, Tstg -65 to +175 C UH840 UH840 = Device Code ORDERING INFORMATION Device MURH840CT Package Shipping TO-220 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 381 Publication Order Number: MURH840CT/D MURH840CT THERMAL CHARACTERISTICS (Per Diode Leg) Rating Maximum Thermal Resistance, Junction to Case Symbol Value Unit RJC 3.0 C/W ELECTRICAL CHARACTERISTICS (Per Diode Leg) Maximum Instantaneous Forward Voltage (Note 1.) (iF = 4.0 Amps, TC = 150C) (iF = 4.0 Amps, TC = 25C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 150C) (Rated dc Voltage, TC = 25C) iR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amps/s) trr Volts 1.9 2.2 A 500 10 28 ns 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. "++/+,.++'-SR -# /+ +/+, /(%- /(%-, Figure 2. Typical Reverse Current, Per Leg " / /+ (+0+.++'-&), > "',-'-'(.,(+0+.++'-&) -# ,*.+ 0/ K "',-'-'(., /(%- /(%-, Figure 1. Typical Forward Voltage - &"'- -&)+-.+ Figure 3. Forward Current Derating, Ambient, Per Leg http://onsemi.com 382 +- /+ ))%" )"-'E ,*.+ 0/ - , -&)+-.+ Figure 4. Current Derating, Case, Per Leg )/ /+ )(0+",,")-"('0--, " /+ )(0+",,")-"('0--, MURH840CT /+ +/+, /(%- /(%-, Figure 5. Typical Capacitance, Per Leg ,*.+ 0/ "/ /+ (+0+ .++'- &), Figure 6. Forward Power Dissipation, Per Leg http://onsemi.com 383 Preferred Device # 18(3 (&5,),(3 . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: * * * * * * * * http://onsemi.com Ultrafast 35 Nanosecond Recovery Times 175C Operating Junction Temperature Popular TO-220 Package Epoxy Meets UL94, VO @ 1/8 High Temperature Glass Passivated Junction High Voltage Capability to 600 Volts Low Leakage Specified @ 150C Case Temperature Current Derating @ Both Case and Ambient Temperatures ULTRAFAST RECTIFIER 8.0 AMPERES 600 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * 4 Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: UH860 MAXIMUM RATINGS (Per Leg) Rating 1 Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 600 V Average Rectified Forward Current (Rated VR, TC = 120C) Total Device IF(AV) 3 TO-220AB CASE 221A PLASTIC A MARKING DIAGRAM 4.0 8.0 Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 120C) IFM 16 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A TJ, Tstg -65 to +175 C Operating Junction and Storage Temperature Range 2 UH860 UH860 = Device Code ORDERING INFORMATION Device MURH860CT Package Shipping TO-220 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 384 Publication Order Number: MURH860CT/D MURH860CT THERMAL CHARACTERISTICS (Per Leg) Rating Maximum Thermal Resistance, Junction to Case Symbol Value Unit RJC 3.0 C/W ELECTRICAL CHARACTERISTICS (Per Leg) Maximum Instantaneous Forward Voltage (Note 1.) (iF = 4.0 Amps, TC = 150C) (iF = 4.0 Amps, TC = 25C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 150C) (Rated dc Voltage, TC = 25C) iR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amps/s) trr Volts 2.5 2.8 A 500 10 35 ns -# " + +/+,%$ .++'- > "',-'-'(.,(+0+.++'-&), 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% K "',-'-'(., /(%- /(%-, Figure 1. Typical Forward Voltage, Per Leg /+ +/+, /(%- /(%-, Figure 2. Typical Reverse Leakage Current, Per Leg -# ,*.+ 0/ "/ /+ (+0+ .++'- &), " / /+ (+0+.++'-&), )//+ )(0+",,")-"('0--, +- /(%- ))%" +# 0 ,*.+ - , -&)+-.+ Figure 4. Typical Current Derating, Case, Per Leg Figure 3. Typical Forward Dissipation, Per Leg http://onsemi.com 385 -GG+/+,+(/+2-"&CH -GG *GG /G / 9> 9I H "/ /+ (+0+ .++'- &), )"-'E Figure 5. Typical Recovery Characteristics /+ +/+, /(%- /(%-, Figure 6. Typical Capacitance, Per Leg http://onsemi.com 386 *GG +(/+,-(+!+ C MURH860CT Preferred Device " 18(3 (&5,),(3 For High and Very High Resolution Monitors This state-of-the-art power rectifier is specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. * * * * http://onsemi.com SCANSWITCH RECTIFIER 10 AMPERES 1200 VOLTS 1200 Volt Blocking Voltage 20 mJ Avalanche Energy (Guaranteed) 12 Volt (Typical) Peak Transient Overshoot Voltage 135 ns (Typical) Forward Recovery Time Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead Temperature for Soldering Purposes: 4 260C Max. for 10 Seconds * Shipped 50 units per plastic tube * Marking: U10120E MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 1200 V Average Rectified Forward Current (Rated VR, TC = 125C) IF(AV) 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, Per Leg 20 kHz, TC = 125C) IFRM 20 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A TJ -65 to +125 C WAVAL 20 mJ Operating Junction Temperature Range Controlled Avalanche Energy 1 3 TO-220AC CASE 221B STYLE 1 MARKING DIAGRAM U10120E U10120E = Device Code ORDERING INFORMATION Device MUR10120E Package Shipping TO-220 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 387 Publication Order Number: MUR10120E/D MUR10120E THERMAL CHARACTERISTICS Rating Thermal Resistance -- Junction to Case Symbol Value Unit RJC 2.0 C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Typ Max 1.7 1.9 2.0 2.2 25 750 100 1000 Unit Maximum Instantaneous Forward Voltage (Note 1.) (iF = 6.5 Amps, TJ = 125C) (iF = 6.5 Amps, TJ = 25C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 125C) iR Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 Amps/s) trr 150 175 ns Maximum Forward Recovery Time IF = 6.5 Amps, di/dt = 12 Amps/s (As Measured on a Deflection Circuit) tfr 135 175 ns VRFM 12 14 Volts Peak Transient Overshoot Voltage Volts A 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. "+ +/+,.++'- /+ +/+, /(%- /(%-, Figure 2. Typical Reverse Current "/ /+ )(0+",,")-"('0--, >"',-'-'(.,(+0+.++'-&), +- /+ ))%" 98 ,*.+ 0/ K "',-'-'(., /(%- /(%-, - , -&)+-.+ Figure 1. Typical Forward Voltage Figure 3. Current Derating, Case http://onsemi.com 388 +# 0 )/ /+ )(0+",,")-"('0--, -# ,*.+ 0/ 98 - &"'- -&)+-.+ "/ /+ (+0+ .++'- &), Figure 4. Current Derating, Ambient Figure 5. Power Dissipation -# -2)"% )"-' - / E )"-'E " / /+ (+0+.++'-&), MUR10120E /+ +/+, /(%- /(%-, Figure 6. Typical Capacitance http://onsemi.com 389 Preferred Device " 18(3 (&5,),(3 For Use As A Damper Diode In High and Very High Resolution Monitors http://onsemi.com The MUR10150E is a state-of-the-art Power Rectifier specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. * * * * * SCANSWITCH RECTIFIER 10 AMPERES 1500 VOLTS 1500 V Blocking Voltage 20 mJ Avalanche Energy Guaranteed Peak Transient Overshoot Voltage Specified, 14 Volts (typical) Forward Recovery Time Specified, 135 ns (typical) Epoxy Meets UL94, VO at 1/8 Mechanical Characteristics * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: U10150E 4 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 1500 V Average Rectified Forward Current (Rated VR, TC = 125C) IF(AV) 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, Per Leg 20 kHz, TC = 125C) IFRM 20 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A 1 3 TO-220AC CASE 221B STYLE 1 MARKING DIAGRAM U10150E Operating Junction and Storage Temperature Range TJ, Tstg -65 to +125 C Controlled Avalanche Energy WAVAL 20 mJ U10150E = Device Code ORDERING INFORMATION Device MUR10150E Package Shipping TO-220 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 390 Publication Order Number: MUR10150E/D MUR10150E THERMAL CHARACTERISTICS Rating Thermal Resistance -- Junction to Case Symbol Value Unit RJC 2.0 C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Typ Max Unit 1.7 1.9 2.2 2.4 750 25 1000 100 Maximum Instantaneous Forward Voltage (Note 1.) (iF = 6.5 Amps, TJ = 125C) (iF = 6.5 Amps, TJ = 25C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 125C) (Rated dc Voltage, TJ = 25C) iR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amps/s) trr 150 175 ns Maximum Forward Recovery Time (IF = 6.5 Amps, di/dt = 12 Amps/s) tfr 135 175 ns VRFM 14 16 Volts Peak Transient Overshoot Voltage Volts A 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% "+/+,.++'- + -# $ $ /+ +/+, /(%- /(%-, K "',-'-'(., /(%- /(%-, Figure 1. Typical Forward Voltage )/+ (+0+)(0+",,")-"('0--, / > "',-'-'(.,(+0+.++'-&), -# Figure 2. Typical Reverse Current -# ,*.+ 0/ ,"' 0/ +,",-"/ %( 98 "/ /+ (+0+ .++'- &), Figure 3. Forward Power Dissipation http://onsemi.com 391 "/+ (+0+.++'-&), / MUR10150E +- /+ ))%" +# 0 98 ,*.+ 0/ - , -&)+-.+ Figure 4. Current Derating Case -2)"% )"-' / E )"-'E /+ +/+, /(%- /(%-, Figure 5. Typical Capacitance *,-(++(/+2!+ C GG -+/+,+(/+2-"&CH GG /+ / 9> 9I H H " (+0+ .++'- &), $ /+ / 9> 9I H H " (+0+ .++'- &), Figure 6. Typical Reverse Recovery Time Figure 7. Typical Stored Recovery Charge http://onsemi.com 392 Preferred Devices " 18(3 (&5,),(34 http://onsemi.com . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: * * * * * * * ULTRAFAST RECTIFIERS 15 AMPERES 100-600 VOLTS Ultrafast 35 and 60 Nanosecond Recovery Time 175C Operating Junction Temperature Popular TO-220 Package High Voltage Capability to 600 Volts Low Forward Drop Low Leakage Specified @ 150C Case Temperature Current Derating Specified @ Both Case and Ambient Temperatures Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 4 * Lead Temperature for Soldering Purposes: 260C Max. for * * MARKING DIAGRAM 10 Seconds Shipped 50 units per plastic tube Marking: U1510, U1515, U1520, U1540, U1560 U15xx MAXIMUM RATINGS 1 Please See the Table on the Following Page 3 TO-220AC CASE 221B PLASTIC U15xx = Device Code xx = 10, 15, 20, = 40 or 60 ORDERING INFORMATION Device Package Shipping MUR1510 TO-220 50 Units/Rail MUR1515 TO-220 50 Units/Rail MUR1520 TO-220 50 Units/Rail MUR1540 TO-220 50 Units/Rail MUR1560 TO-220 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 393 Publication Order Number: MUR1520/D MUR1510, MUR1515, MUR1520, MUR1540, MUR1560 MAXIMUM RATINGS MUR Symbol 1510 1515 1520 1540 1560 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 150 200 400 600 Volts Average Rectified Forward Current (Rated VR) IF(AV) 15 @ TC = 150C 15 @ TC = 145C Amps Peak Rectified Forward Current (Rated VR, Square Wave, 20 kHz) IFRM 30 @ TC = 150C 30 @ TC = 145C Amps Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 200 150 Amps Rating Operating Junction Temperature and Storage Temperature Range TJ, Tstg -65 to +175 C RJC 1.5 C/W THERMAL CHARACTERISTICS Maximum Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1.) (iF = 15 Amps, TC = 150C) (iF = 15 Amps, TC = 25C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 150C) (Rated dc Voltage, TC = 25C) iR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amps/s) trr Volts 0.85 1.05 1.12 1.25 1.20 1.50 500 10 500 10 1000 10 A 35 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. http://onsemi.com 394 60 ns MUR1510, MUR1515, MUR1520, MUR1540, MUR1560 MUR1510, MUR1515, MUR1520 -# "++/+,.++'- /+ +/+, /(%- /(%-, Figure 2. Typical Reverse Current +# 0 H (7I6>C:9 GDB ,B6AA -( !:6I ,>C@ ,FJ6G: 06K: 98 ,FJ6G: 06K: +# 0 H (7I6>C:9 >C G:: >G 'D !:6I ,>C@ ,FJ6G: 06K: +6I:9 /DAI6<: EEA>:9 Figure 3. Current Derating, Case 98 Figure 1. Typical Forward Voltage 98 - , -&)+-.+ K "',-'-'(., /(%- /(%-, )/ /+ )(0+",,")-"('0--, "/ /+ (+0+.++'-&), -# "/ /+ (+0+.++'-&), > "',-'-'(.,(+0+.++'-&), " +:H>HI>K: %D69 )$ "/ " 6E68>I>K: %D69 )$ "/ 98 ,FJ6G: 06K: -# - &"'- -&)+-.+ "/ /+ (+0+ .++'- &), Figure 4. Current Derating, Ambient Figure 5. Power Dissipation http://onsemi.com 395 MUR1510, MUR1515, MUR1520, MUR1540, MUR1560 MUR1540 "++/+,.++'- -# /+ +/+, /(%- /(%-, Figure 7. Typical Reverse Current "/ /+ (+0+.++'-&), 98 +# 0 H (7I6>C:9 GDB ,B6AA -( !:6I ,>C@ ,FJ6G: 06K: 98 ,FJ6G: 06K: +# 0 H (7I6>C:9 >C G:: >G 'D !:6I ,>C@ ,FJ6G: 06K: +6I:9 /DAI6<: EEA>:9 +:H>HI>K: %D69 ")$ "/ 98 " 6E68>I>K: %D69 )$ "/ Figure 8. Current Derating, Case 98 Figure 6. Typical Forward Voltage - , -&)+-.+ K "',-'-'(., /(%- /(%-, )/ /+ )(0+",,")-"('0--, > "',-'-'(.,(+0+.++'-&), "/ /+ (+0+.++'-&), -# ,FJ6G: 06K: -# - &"'- -&)+-.+ "/ /+ (+0+ .++'- &), Figure 9. Current Derating, Ambient Figure 10. Power Dissipation http://onsemi.com 396 MUR1510, MUR1515, MUR1520, MUR1540, MUR1560 MUR1560 "++/+,.++'- -# /+ +/+, /(%- /(%-, Figure 12. Typical Reverse Current "/ /+ (+0+.++'-&), "/ /+ (+0+.++'-&), 98 ,FJ6G: 06K: +6I:9 /DAI6<: EEA>:9 Figure 13. Current Derating, Case 98 +# 0 H (7I6>C:9 GDB ,B6AA -( !:6I ,>C@ ,FJ6G: 06K: 98 ,FJ6G: 06K: +# 0 H (7I6>C:9 >C G:: >G 'D !:6I ,>C@ Figure 11. Typical Forward Voltage - , -&)+-.+ K "',-'-'(., /(%- /(%-, )/ /+ )(0+",,")-"('0--, > "',-'-'(.,(+0+.++'-&), -# " 6E68>I>K: %D69 )$ "/ 98 ,FJ6G: 06K: " +:H>HI>K: "C9J8I>K: %D69 )$ "/ -# - &"'- -&)+-.+ "/ /+ (+0+ .++'- &), Figure 14. Current Derating, Ambient Figure 15. Power Dissipation http://onsemi.com 397 I ,"' % ).%, 3#I GI +# +# 0 &1 .+/, ))%2 (+ )(0+ ).%, -+"' ,!(0' + -"& - - -#E@ - )E@ 3#I )E@ I .-2 2% I I I -"& BH Figure 16. Thermal Response )"-'E GI-+',"'--!+&%+,",-''(+&%"3 MUR1510, MUR1515, MUR1520, MUR1540, MUR1560 -# /+ +/+, /(%- /(%-, Figure 17. Typical Capacitance http://onsemi.com 398 Preferred Device " 18(3 (&5,),(3 .53$)$45 . . . designed for use in negative switching power supplies, inverters and as free wheeling diode. Also, used in conjunction with a standard cathode dual Ultrafast Rectifier, makes a single phase full-wave bridge. These state-of-the-art devices have the following features: * * * * * * * Reverse Polarity Rectifier Ultrafast 95 Nanosecond Reverse Recovery Times Exhibits Soft Recovery Characteristics High Temperature Glass Passivated Junction Low Leakage Specified @ 150C Case Temperature Current Derating @ Case Temperature Epoxy Meets UL94, VO @ 1/8 http://onsemi.com ULTRAFAST RECTIFIER 20 AMPERES 200 VOLTS 1 4 3 Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * 4 Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: U2020R 1 3 TO-220AC CASE 221B PLASTIC MAXIMUM RATINGS (Per Leg) Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 200 Volts Average Rectified Forward Voltage, (Rated VR), TC = 125C IF(AV) 20 Amps Peak Repetitive Forward Current (Rated VR), TC = 125C IFRM 40 Amps Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 250 Amps TJ, Tstg -65 to +175 C Rating Operating Junction Temperature and Storage Temperature Range MARKING DIAGRAM 4 U2020R 1 3 ORDERING INFORMATION Device MUR2020R Package Shipping TO-220AC 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 399 Publication Order Number: MUR2020R/D MUR2020R THERMAL CHARACTERISTICS (Per Leg) Characteristic Symbol Value Unit RJC 2.0 C/W Thermal Resistance - Junction to Case ELECTRICAL CHARACTERISTICS (Per Leg) Maximum Instantaneous Forward Voltage (Note 1.) (IF = 20 Amps, TC = 25C) (IF = 20 Amps, TC = 150C) VF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 25C) (Rated dc Voltage, TC = 150C) IR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amps/s) (IF = 1.0 Amp, di/dt = 100 Amps/s) trr Volts 1.1 1.0 A mA 50 1 ns 95 75 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. PF(AV), AVERAGE POWER DISSIPATION (WATTS) IF(AV), AVERAGE FORWARD 40 dc 30 TJ = 175C 20 Square Wave 10 0 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 0 100 50 150 TJ = 175C Square Wave 15 dc 10 5 0 0 200 5 10 15 20 TC, CASE TEMPERATURE (C) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 7. Current Derating Figure 8. Power Dissipation 25 1000.00 IR, REVERSE CURRENT (A) 100 VF @ 175C 10 Ir @ 175C Ir @ 100C 100.00 VF @ 25C VF @ 100C 1 0.1 0.3 20 Ir @ 25C 10.00 1.00 0.5 0.7 0.9 1.1 1.3 1.5 0 50 100 150 VF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 9. Maximum Forward Voltage Figure 10. Maximum Reverse Current http://onsemi.com 400 200 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) MUR2020R 1000.000 IR, REVERSE CURRENT (A) 100 VF @ 175C 10 VF @ 25C 1 VF @ 100C 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.000 Ir @ 25C 0.100 0.010 0.001 0 50 100 150 VF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 11. Typical Forward Voltage Figure 12. Typical Reverse Current 200 10000 C, CAPACITANCE (pF) C, CAPACITANCE (pF) Ir @ 100C 10.00 1.5 10000 TJ = 25C 1000 100 0.1 Rjc(t), TRANSIENT THERMAL RESISTANCE (C/W) Ir @ 175C 100.000 1 10 1000 TJ = 25C 100 0.1 100 1 10 100 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 14. Maximum Capacitance Figure 15. Typical Capacitance 10 1 D = 0.5 0.1 0.1 0.05 ZJC(t) = r(t) RJC P(pk) 0.1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT T1 TJ(pk) - TC = P(pk) ZJC(t) t1 t2 0.01 DUTY CYCLE, D = t1/t2 Single Pulse 0.001 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 t, TIME (s) Figure 13. Thermal Response http://onsemi.com 401 0.1 1 10 100 " 18(3 (&5,),(34 http://onsemi.com . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: * * * * * * * * ULTRAFAST RECTIFIERS 8.0 AMPERES 100-600 VOLTS Ultrafast 35 and 60 Nanosecond Recovery Times 175C Operating Junction Temperature Popular TO-220 Package Epoxy Meets UL94, VO @ 1/8 High Temperature Glass Passivated Junction High Voltage Capability to 600 Volts Low Leakage Specified @ 150C Case Temperature Current Derating @ Both Case and Ambient Temperatures Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal 4 MARKING DIAGRAM Leads are Readily Solderable * Lead Temperature for Soldering Purposes: * * U16xx 260C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: U1610, U1615, U1620, U1640, U1660 1 2 3 TO-220AB CASE 221A PLASTIC MAXIMUM RATINGS Please See the Table on the Following Page U16xx = Device Code xx = 10, 15, 20, 40 or 60 ORDERING INFORMATION Device Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 3 402 Package Shipping MUR1610CT TO-220 50 Units/Rail MUR1615CT TO-220 50 Units/Rail MUR1620CT TO-220 50 Units/Rail MUR1640CT TO-220 50 Units/Rail MUR1660CT TO-220 50 Units/Rail Publication Order Number: MUR1620CT/D MUR1610CT, MUR1615CT, MUR1620CT, MUR1640CT, MUR1660CT MAXIMUM RATINGS MUR16 Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Total Device, (Rated VR), TC = 150C Per Leg Total Device Symbol 10CT 15CT 20CT 40CT 60CT Unit VRRM VRWM VR 100 150 200 400 600 Volts IF(AV) 8.0 16 Amps Peak Rectified Forward Current Per Diode Leg (Rated VR, Square Wave, 20 kHz), TC = 150C IFM 16 Amps Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 100 Amps Operating Junction Temperature and Storage Temperature TJ, Tstg 65 to +175 C THERMAL CHARACTERISTICS (Per Diode Leg) Maximum Thermal Resistance, Junction to Case RJC 3.0 C/W 2.0 ELECTRICAL CHARACTERISTICS (Per Diode Leg) Maximum Instantaneous Forward Voltage (Note 1.) (iF = 8.0 Amps, TC = 150C) (iF = 8.0 Amps, TC = 25C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 150C) (Rated dc Voltage, TC = 25C) iR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amps/s) (IF = 0.5 Amp, IR = 1.0 Amp, IREC = 0.25 Amp) trr Volts 0.895 0.975 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% http://onsemi.com 403 1.00 1.30 1.20 1.50 A 250 5.0 500 10 35 25 60 50 ns MUR1610CT, MUR1615CT, MUR1620CT, MUR1640CT, MUR1660CT MUR1610CT, MUR1615CT, MUR1620CT "++/+,.++'- -# -# /+ +/+, /(%- /(%-, Figure 2. Typical Reverse Current, Per Leg* -=: 8JGK:H H=DLC 6G: INE>86A ;DG I=: =><=:HI KDAI6<: 9:K>8: >C I=: KDAI6<: <GDJE>C< -NE>86A G:K:GH: 8JGG:CI ;DG ADL:G KDAI6<: H:A:8I>DCH 86C 7: :HI>B6I:9 ;GDB I=:H: H6B: 8JGK:H >; /+ >H HJ;;>8>:CIAN 7:ADL G6I:9 /+ "/ /+ )(0+",,")-"('0--, > "',-'-'(.,(+0+.++'-&), +- /+ ))%" 98 K "',-'-'(., /(%- /(%-, ,*.+ 0/ - , -&)+-.+ Figure 1. Typical Forward Voltage, Per Leg +# 0 +# 0 '( !-,"'$ 98 ,*.+ 0/ 98 ,*.+ 0/ )/ /+ )(0+",,")-"('0--, "/ /+ (+0+.++'-&), Figure 3. Current Derating, Case, Per Leg -# ,*.+ 0/ 98 - &"'- -&)+-.+ "/ /+ (+0+ .++'- &), Figure 4. Current Derating, Ambient, Per Leg Figure 5. Power Dissipation, Per Leg http://onsemi.com 404 MUR1610CT, MUR1615CT, MUR1620CT, MUR1640CT, MUR1660CT MUR1640CT -# -# /+ +/+, /(%- /(%-, Figure 7. Typical Reverse Current, Per Leg* -=: 8JGK:H H=DLC 6G: INE>86A ;DG I=: =><=:HI KDAI6<: 9:K>8: >C I=: KDAI6<: <GDJE>C< -NE>86A G:K:GH: 8JGG:CI ;DG ADL:G KDAI6<: H:A:8I>DCH 86C 7: :HI>B6I:9 ;GDB I=:H: 8JGK:H >; /+ >H HJ;;>8>:CIAN 7:ADL G6I:9 /+ "/ /+ )(0+",,")-"('0--, > "',-'-'(.,(+0+.++'-&), "++/+,.++'- +- /+ ))%" 98 K "',-'-'(., /(%- /(%-, ,*.+ 0/ - , -&)+-.+ Figure 6. Typical Forward Voltage, Per Leg +# 0 +# 0 '( !- ,"'$ 98 ,*.+ 0/ 98 ,*.+ 0/ )/ /+ )(0+",,")-"('0--, "/ /+ (+0+.++'-&), Figure 8. Current Derating, Case, Per Leg -# ,*.+ 0/ 98 - &"'- -&)+-.+ "/ /+ (+0+ .++'- &), Figure 9. Current Derating, Ambient, Per Leg Figure 10. Power Dissipation, Per Leg http://onsemi.com 405 MUR1610CT, MUR1615CT, MUR1620CT, MUR1640CT, MUR1660CT MUR1660CT "++/+,.++'- -# -# /+ +/+, /(%- /(%-, Figure 12. Typical Reverse Current, Per Leg* -=: 8JGK:H H=DLC 6G: INE>86A ;DG I=: =><=:HI KDAI6<: 9:K>8: >C I=: KDAI6<: <GDJE>C< -NE>86A G:K:GH: 8JGG:CI ;DG ADL:G KDAI6<: H:A:8I>DCH 86C 7: :HI>B6I:9 ;GDB I=:H: H6B: 8JGK:H >; /+ >H HJ;;>8>:CIAN 7:ADL G6I:9 /+ "/ /+ )(0+",,")-"('0--, > "',-'-'(.,(+0+.++'-&), +- /+ ))%" 98 K "',-'-'(., /(%- /(%-, ,*.+ 0/ - , -&)+-.+ Figure 11. Typical Forward Voltage, Per Leg +# 0 +# 0 '( !- ,"'$ 98 ,*.+ 0/ 98 ,*.+ 0/ )/ /+ )(0+",,")-"('0--, "/ /+ (+0+.++'-&), Figure 13. Current Derating, Case, Per Leg ,*.+ 0/ -# 98 - &"'- -&)+-.+ "/ /+ (+0+ .++'- &), Figure 14. Current Derating, Ambient, Per Leg Figure 15. Power Dissipation, Per Leg http://onsemi.com 406 I 3#I GI +# )E@ ,"' % ).%, .+/, ))%2 (+ )(0+ ).%, -+"' ,!(0' + -"& - - I -#E@ - )E@ 3#I .-2 2% I I I -"& BH Figure 16. Thermal Response )"-'E GI-+',"'--!+&%+,",-''(+&%"3 MUR1610CT, MUR1615CT, MUR1620CT, MUR1640CT, MUR1660CT &.+ - -!+. &.+ - -!+. - -# /+ +/+, /(%- /(%-, Figure 17. Typical Capacitance, Per Leg http://onsemi.com 407 Preferred Device " 6$. .53$)$45 18(3 (&5,),(3 . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full-wave bridge. These state-of-the-art devices have the following features: * * * * * * * * http://onsemi.com Common Anode Dual Rectifier (8.0 A per Leg or 16 A per Package) Ultrafast 35 Nanosecond Reverse Recovery Times Exhibits Soft Recovery Characteristics High Temperature Glass Passivated Junction Low Leakage Specified @ 150C Case Temperature Current Derating @ Both Case and Ambient Temperatures Epoxy Meets UL94, VO @ 1/8 Complement to MUR1620CT Common Cathode Device ULTRAFAST RECTIFIER 16 AMPERES 200 VOLTS Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal 4 Leads are Readily Solderable * Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds * Shipped 50 units per plastic tube * Marking: U1620R 1 MAXIMUM RATINGS (Per Leg) Rating 2 3 Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 200 V TO-220AB CASE 221A STYLE 7 Average Rectified Forward Voltage (Rated VR, TC = 160C) Per Leg Per Total Device IF(AV) A MARKING DIAGRAM Peak Repetitive Surge Current (Rated VR, Square Wave, Per Diode 20 kHz, TC = 140C) IFM Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Operating Junction and Storage Temperature Range 8.0 16 16 A U1620R 100 A U1620R = Device Code TJ, Tstg C -65 to +175 ORDERING INFORMATION Device MUR1620CTR Package Shipping TO-220 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 408 Publication Order Number: MUR1620CTR/D MUR1620CTR THERMAL CHARACTERISTICS (Per Leg) Rating Thermal Resistance -- Junction to Case Symbol Value Unit RJC 2.0 C/W ELECTRICAL CHARACTERISTICS (Per Leg) Maximum Instantaneous Forward Voltage (Note 1.) (iF = 8.0 Amps, TC = 25C) (iF = 8.0 Amps, TC = 150C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 25C) (Rated dc Voltage, TC = 150C) iR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amps/s) (IF = 0.5 Amp, di/dt = 100 Amps/s) trr Volts 1.2 1.1 A 5.0 500 ns 85 35 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. -# -=: 8JGK:H H=DLC 6G: INE>86A ;DG I=: =><=:HI KDAI6<: 9:K>8: >C I=: KDAI6<: <GDJE>C< -NE>86A G:K:GH: 8JGG:CI ;DG ADL:G KDAI6<: H:A:8I>DCH 86C 7: :HI>B6I:9 ;GDB I=:H: H6B: 8JGK:H >; /+ >H HJ;;>8>:CIAN 7:ADL G6I:9 /+ Figure 2. Typical Reverse Current* (Per Leg) /+ +/+, /(%- /(%-, "/ /+ (+0+.++'-&), > "',-'-'(.,(+0+.++'-&), -# "++/+,.++'- +- /+ ))%" +# 0 98 ,*.+ 0/ K "',-'-'(., /(%- /(%-, - , -&)+-.+ Figure 1. Typical Forward Voltage (Per Leg) Figure 3. Current Derating, Case (Per Leg) http://onsemi.com 409 +# 0 98 ,*.+ 0/ )/ /+ )(0+",,")-"('0--, -# ,*.+ 0/ 98 - &"'- -&)+-.+ "/ /+ (+0+ .++'- &), Figure 4. Current Derating, Ambient (Per Leg) Figure 5. Power Dissipation (Per Leg) I ,"' % ).%, 3#I GI +# )E@ .+/, ))%2 (+ )(0+ ).%, -+"' ,!(0' + -"& - - I -#E@ - )E@ 3#I .-2 2% I I I -"& BH Figure 6. Thermal Response )"-'E GI-+',"'--!+&%+,",-''(+&%"3 "/ /+ (+0+.++'-&), MUR1620CTR /+ +/+, /(%- /(%-, Figure 7. Typical Capacitance (Per Leg) http://onsemi.com 410 Preferred Device " 18(3 (&5,),(3 Designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: * * * * * * * * http://onsemi.com Ultrafast 35 Nanosecond Recovery Times 150C Operating Junction Temperature Epoxy Meets UL94, VO @ 1/8 High Temperature Glass Passivated Junction Low Leakage Specified @ 150C Case Temperature Current Derating @ Both Case and Ambient Temperatures Electrically Isolated. No Isolation Hardware Required. UL Recognized File #E69369 (Note 1.) ULTRAFAST RECTIFIER 16 AMPERES 200 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds * Shipped 50 units per plastic tube * Marking: U1620 1 MAXIMUM RATINGS Please See the Table on the Following Page 2 3 ISOLATED TO-220 CASE 221D STYLE 3 1. UL Recognized mounting method is per Figure 4. MARKING DIAGRAM U1620 U1620 = Device Code ORDERING INFORMATION Device MURF1620CT Package Shipping TO-220 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 411 Publication Order Number: MURF1620CT/D MURF1620CT MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit VRRM VRWM VR 200 Volts IF(AV) 8 16 Amps Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz), TC = 150C IFM 16 Amps Non-repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 100 Amps TJ, Tstg - 65 to +150 C Viso1 Viso2 Viso3 4500 3500 1500 Volts RJC 4.2 C/W TL 260 C Symbol Value Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Total Device, (Rated VR), TC = 150C Total Device Operating Junction and Storage Temperature RMS Isolation Voltage (t = 1 second, R.H. 30%, TA = 25C) (Note 3.) Per Figure 3. Per Figure 4. (Note 2.) Per Figure 5. THERMAL CHARACTERISTICS (Per Leg) Maximum Thermal Resistance, Junction to Case Lead Temperature for Soldering Purposes: 1/8 from the Case for 5 seconds ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Maximum Instantaneous Forward Voltage (Note 4.) (iF = 8.0 Amp, TC = 150C) (iF = 8.0 Amp, TC = 25C) vF Maximum Instantaneous Reverse Current (Note 4.) (Rated dc Voltage, TC = 150C) (Rated dc Voltage, TC = 25C) iR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amp/s) (IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp) trr Unit Volts 0.895 0.975 A 250 5.0 ns 35 25 2. UL Recognized mounting method is per Figure 4. 3. Proper strike and creepage distance must be provided. 4. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. $ $ " ++/+,.++'-SR > "',-'-'(.,(+0+.++'-&), -# K "',-'-'(., /(%- /(%-, -# Figure 1. Typical Forward Voltage, Per Leg /+ +/+, /(%- /(%-, Figure 2. Typical Reverse Current, Per Leg* http://onsemi.com 412 MURF1620CT TEST CONDITIONS FOR ISOLATION TESTS* %") &(.'- .%%2 ",(%- )$ %") &(.'- .%%2 ",(%- )$ %, !-,"'$ &"' &(.'- .%%2 ",(%- )$ &"' %, %, !-,"'$ !-,"'$ &"' Figure 3. Clip Mounting Position for Isolation Test Number 1 Figure 4. Clip Mounting Position for Isolation Test Number 2 Figure 5. Screw Mounting Position for Isolation Test Number 3 * Measurement made between leads and heatsink with all leads shorted together. MOUNTING INFORMATION** ,+0 %") )%"' 0,!+ !-,"'$ (&)+,,"(' 0,!+ !-,"'$ '.- 6a. Screw-Mounted 6b. Clip-Mounted Figure 6. Typical Mounting Techniques Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. **For more information about mounting power semiconductors see Application Note AN1040. http://onsemi.com 413 Preferred Device " 18(3 (&5,),(3 . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: * * * * * * * http://onsemi.com Ultrafast 35 Nanosecond Recovery Times 175C Operating Junction Temperature Electrically Isolated. No Isolation Hardware Required. Epoxy Meets UL94, VO @ 1/8 High Temperature Glass Passivated Junction High Voltage Capability to 600 Volts Low Leakage Specified @ 150C Case Temperature ULTRAFAST RECTIFIER 8.0 AMPERES 600 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds * Shipped 50 units per plastic tube * Marking: UH860 MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 600 V Average Rectified Forward Current (Rated VR, TC = 120C) Total Device IF(AV) 4.0 8.0 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 120C) IFM 16 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A Operating Junction and Storage Temperature Range 1 2 3 ISOLATED TO-220 CASE 221D STYLE 4 MARKING DIAGRAM UH860 TJ, Tstg C -65 to +150 UH860 = Device Code ORDERING INFORMATION Device MURHF860CT Package Shipping TO-220 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 1 414 Publication Order Number: MURHF860CT/D MURHF860CT THERMAL CHARACTERISTICS (Per Leg) Characteristic Maximum Thermal Resistance, Junction to Case Symbol Value Unit RJC 4.1 C/W ELECTRICAL CHARACTERISTICS (Per Leg) Maximum Instantaneous Forward Voltage (Note 1.) (iF = 4.0 Amps, TC = 150C) (iF = 4.0 Amps, TC = 25C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 150C) (Rated dc Voltage, TC = 25C) iR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amps/s) trr Volts 2.5 2.8 A 500 10 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% http://onsemi.com 415 35 ns Preferred Device " 18(3 (&5,),(3 Designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: * * * * * * * * http://onsemi.com Ultrafast 60 Nanosecond Recovery Times 150C Operating Junction Temperature Epoxy Meets UL94, VO @ 1/8 High Temperature Glass Passivated Junction Low Leakage Specified @ 150C Case Temperature Current Derating @ Both Case and Ambient Temperatures Electrically Isolated. No Isolation Hardware Required. UL Recognized File #E69369 (Note 1.) ULTRAFAST RECTIFIER 16 AMPERES 600 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds * Shipped 50 units per plastic tube * Marking: U1660 1 MAXIMUM RATINGS Please See the Table on the Following Page 2 3 ISOLATED TO-220 CASE 221D STYLE 3 1. UL Recognized mounting method is per Figure 4. MARKING DIAGRAM U1660 U1660 = Device Code ORDERING INFORMATION Device MURF1660CT Package Shipping TO-220 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 416 Publication Order Number: MURF1660CT/D MURF1660CT MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit VRRM VRWM VR 600 Volts IF(AV) 8 16 Amps Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz), TC = 150C IFM 16 Amps Non-repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 100 Amps TJ, Tstg - 65 to +150 C Viso1 Viso2 Viso3 4500 3500 1500 Volts RJC 3.0 C/W TL 260 C Symbol Value Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Total Device, (Rated VR), TC = 150C Per Diode Per Device Operating Junction and Storage Temperature RMS Isolation Voltage (t = 1 second, R.H. 30%, TA = 25C) (Note 3.) Per Figure 3. Per Figure 4. (Note 2.) Per Figure 5. THERMAL CHARACTERISTICS (Per Leg) Maximum Thermal Resistance, Junction to Case Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Maximum Instantaneous Forward Voltage (Note 4.) (iF = 8.0 Amp, TC = 150C) (iF = 8.0 Amp, TC = 25C) vF Maximum Instantaneous Reverse Current (Note 4.) (Rated dc Voltage, TC = 150C) (Rated dc Voltage, TC = 25C) iR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amp/s) (IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp) trr Unit Volts 1.20 1.50 A 500 10 ns 60 50 > "',-'-'(.,(+0+.++'-&), 2. UL Recognized mounting method is per Figure 4. 3. Proper strike and creepage distance must be provided. 4. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. $ -# $ K "',-'-'(., /(%- / " ++/+,.++'-SR -# Figure 1. Typical Forward Voltage, Per Leg /+ +/+, /(%- / Figure 2. Typical Reverse Current, Per Leg* http://onsemi.com 417 MURF1660CT TEST CONDITIONS FOR ISOLATION TESTS* %") &(.'- .%%2 ",(%- )$ %") &(.'- .%%2 ",(%- )$ %, !-,"'$ &"' &(.'- .%%2 ",(%- )$ &"' %, %, !-,"'$ !-,"'$ &"' Figure 3. Clip Mounting Position for Isolation Test Number 1 Figure 4. Clip Mounting Position for Isolation Test Number 2 Figure 5. Screw Mounting Position for Isolation Test Number 3 * Measurement made between leads and heatsink with all leads shorted together. MOUNTING INFORMATION** ,+0 %") )%"' 0,!+ !-,"'$ (&)+,,"(' 0,!+ !-,"'$ '.- 6a. Screw-Mounted 6b. Clip-Mounted Figure 6. Typical Mounting Techniques Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. **For more information about mounting power semiconductors see Application Note AN1040. http://onsemi.com 418 Preferred Device " 18(3 (&5,),(3 . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: * * * * * http://onsemi.com Ultrafast 100 Nanosecond Recovery Time 175C Operating Junction Temperature High Voltage Capability to 400 Volts Low Forward Voltage Drop High Temperature Glass Passivated Junction ULTRAFAST RECTIFIER 30 AMPERES 400 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 4.3 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead Temperature for Soldering Purposes: * * 4 260C Max. for 10 Seconds Shipped 30 Units Per Plastic Tube Marking: U3040 MAXIMUM RATINGS Rating Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 400 V Average Rectified Forward Current TC = 70C IF(AV) 30 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 150C) IFRM 30 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 300 A TJ, Tstg -65 to +175 C Operating Junction and Storage Temperature Range 1 3 TO-218 CASE 340E STYLE 1 MARKING DIAGRAM U3040 U3040 = Device Code ORDERING INFORMATION Device MUR3040 Package Shipping TO-218 30 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 4 419 Publication Order Number: MUR3040/D MUR3040 THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction to Case Symbol Max Unit RJC 1.0 C/W ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1.) @ IF = 30 Amps, TC = 100C @ IF = 30 Amps, TC = 25C VF Instantaneous Reverse Current (Note 1.) @ Rated dc Voltage, TC = 100C @ Rated dc Voltage, TC = 25C IR Reverse Recovery Time IF = 1.0 Amp, dI/dt = 15 Amp/s tRR Volts 1.4 1.5 6.0 35 mA A 100 ns 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% TYPICAL ELECTRICAL CHARACTERISTICS " ++/+,.++'-&), > (+0+.++'-&), / "',-'-'(., (+0+ /(%- B/ -# Figure 1. Typical Forward Voltage > (+0+.++'-&), > (+0+.++'-&), Figure 2. Typical Reverse Current 98 /+ +/+, /(%- /(%-, - , -&)+-.+ 98 "' + "+ 0"-! '( !-,"'$ Figure 3. Current Derating, Case - &"'- -&)+-.+ Figure 4. Current Derating, Ambient http://onsemi.com 420 Preferred Device " 18(3 (&5,),(3 . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: * * * * * http://onsemi.com Ultrafast 75 ns (Typ) Soft Recovery Time 175C Operating Junction Temperature High Voltage Capability to 800 Volts Low Forward Voltage Drop High Temperature Glass Passivated Junction ULTRAFAST RECTIFIER 30 AMPERES 800 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 4.3 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead Temperature for Soldering Purposes: * * 4 260C Max. for 10 Seconds Shipped 30 Units Per Plastic Tube Marking: U3080 MAXIMUM RATINGS Rating Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 800 V Average Rectified Forward Current (Rated VR, TC = 70C) IF(AV) 30 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 150C) IFRM 30 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 300 A TJ, Tstg -65 to +175 C Operating Junction and Storage Temperature Range 1 3 TO-218 CASE 340E STYLE 1 MARKING DIAGRAM U3080 U3080 = Device Code ORDERING INFORMATION Device MUR3080 Package Shipping TO-218 30 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 3 421 Publication Order Number: MUR3080/D MUR3080 THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction to Case Symbol Max Unit RJC 1.0 C/W ELECTRICAL CHARACTERISTICS (Typical Data) Instantaneous Forward Voltage (Note 1.) @ IF = 30 Amps, TC = 25C @ IF = 30 Amps, TC = 100C VF Instantaneous Reverse Current (Note 1.) @ Rated DC Voltage, TC = 25C @ Rated DC Voltage, TC = 100C IR Reverse Recovery Time IF = 1.0 Amp, VR = 30 V, dI/dt = 50 A/s tRR Volts 1.9 1.8 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. http://onsemi.com 422 100 5.0 A mA 110 ns Preferred Device " 18(3 (&5,),(3 . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: * * * * * http://onsemi.com Ultrafast 100 Nanosecond Recovery Time 175C Operating Junction Temperature High Voltage Capability to 400 Volts Low Forward Voltage Drop High Temperature Glass Passivated Junction ULTRAFAST RECTIFIER 60 AMPERES 400 VOLTS Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 4.3 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead Temperature for Soldering Purposes: * * 4 260C Max. for 10 Seconds Shipped 30 Units Per Plastic Tube Marking: U6040 MAXIMUM RATINGS Rating Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 400 V Average Rectified Forward Current TC = 70C IF(AV) 60 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 150C) IFRM 60 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 600 A TJ, Tstg -65 to +175 C Operating Junction and Storage Temperature Range 1 3 TO-218 CASE 340E STYLE 1 MARKING DIAGRAM U6040 U6040 = Device Code ORDERING INFORMATION Device MUR6040 Package Shipping TO-218 30 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 4 423 Publication Order Number: MUR6040/D MUR6040 THERMAL CHARACTERISTICS Rating Symbol Max Unit RJC 0.8 C/W Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1.) @ IF = 60 Amps, TC = 100C @ IF = 60 Amps, TC = 25C VF Instantaneous Reverse Current (Note 1.) @ Rated dc Voltage, TC = 100C @ Rated dc Voltage, TC = 25C IR Reverse Recovery Time IF = 1.0 Amp, dI/dt = 15 Amp/s tRR Volts 1.4 1.5 10 60 mA A 100 ns 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% TYPICAL ELECTRICAL CHARACTERISTICS -# " ++/+,.++'-&), > (+0+.++'-&), / "',-'-'(., (+0+ /(%- B/ Figure 1. Typical Forward Voltage > (+0+.++'-&), > (+0+.++'-&), 98 Figure 2. Typical Reverse Current /+ +/+, /(%- /(%-, - , -&)+-.+ 98 "' + "+ 0"-! '( !-,"'$ Figure 3. Current Derating, Case - &"'- -&)+-.+ Figure 4. Current Derating, Ambient http://onsemi.com 424 " 18(3 (&5,),(34 . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: * * * * * * * * http://onsemi.com ULTRAFAST RECTIFIERS 30 AMPERES 200-600 VOLTS Ultrafast 35 and 60 Nanosecond Recovery Time 175C Operating Junction Temperature High Voltage Capability to 600 Volts Low Forward Drop Low Leakage Specified @ 150C Case Temperature Current Derating Specified @ Both Case and Ambient Temperatures Epoxy Meets UL94, VO @ 1/8 High Temperature Glass Passivated Junction Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 4.3 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and 4 Terminal Leads are Readily Solderable * Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds * Shipped 30 units per plastic tube * Marking: U3020, U3040, U3060 1 2 3 TO-218AC CASE 340D STYLE 2 MAXIMUM RATINGS Please See the Table on the Following Page MARKING DIAGRAM U30x0 U30x0 = Device Code x = 2, 4 or 6 ORDERING INFORMATION Device Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 5 425 Package Shipping MUR3020PT SOT-93 30 Units/Rail MUR3040PT SOT-93 30 Units/Rail MUR3060PT SOT-93 30 Units/Rail Publication Order Number: MUR3020PT/D MUR3020PT, MUR3040PT, MUR3060PT MAXIMUM RATINGS (Per Leg) Rating Symbol MUR3020PT MUR3040PT MUR3060PT Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 200 400 600 Volts Average Rectified Forward Current (Rated VR) Per Leg Per Device IF(AV) Peak Rectified Forward Current, Per Leg (Rated VR, Square Wave, 20 kHz, TC = 150C) IFRM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Per Leg IFSM Operating Junction and Storage Temperature Amps 15 @ TC = 150C 30 @ TC = 150C 15 @ TC = 30 145C 30 @ TC = 150C 30 @ TC =145C 200 150 Amps Amps TJ, Tstg - 65 to +175 C RJC RJA 1.5 40 C/W THERMAL CHARACTERISTICS (Per Diode Leg) Maximum Thermal Resistance -- Junction to Case -- Junction to Ambient ELECTRICAL CHARACTERISTICS (Per Diode Leg) Maximum Instantaneous Forward Voltage (Note 1.) (IF = 15 Amp, TC = 150C) (IF = 15 Amp, TC = 25C) VF Maximum Instantaneous Reverse Current (Note 1.) (Rated DC Voltage, TJ = 150C) (Rated DC Voltage, TJ = 25C) iR Maximum Reverse Recovery Time (iF = 1.0 Amp, di/dt = 50 Amps/s) trr Volts 0.85 1.05 1.12 1.25 1.2 1.5 A 500 10 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. http://onsemi.com 426 35 1000 10 60 ns MUR3020PT, MUR3040PT, MUR3060PT MUR3020PT -# "+ +/+,.++'- /+ +/+, /(%- /(%-, K "',-'-'(., /(%- /(%-, 98 ,*.+ 0/ +- /(%- ))%" Figure 1. Typical Forward Voltage (Per Leg) 98 ,*.+ 0/ +# 0 , (-"' .,"' ,&%% "'' !- ,"'$ 98 ,*.+ 0/ +# 0 , (-"' "' + "+ 0"-! '( !- ,"'$ - &"'- -&)+-.+ - , -&)+-.+ Figure 3. Current Derating, Case (Per Leg) ) / /+ )(0+",,")-"('0--, " / /+ (+0+.++'-&), Figure 2. Typical Reverse Current (Per Leg) " / /+ (+0+.++'-&), > "',-'-'(.,(+0+.++'-&), -# " +,",-"/ %( )$ "/ " )"-"/ %( )$ "/ ,*.+ 0/ -# 98 Figure 4. Current Derating, Ambient (Per Leg) "/ /+ (+0+ .++'- &), Figure 5. Power Dissipation (Per Leg) http://onsemi.com 427 MUR3020PT, MUR3040PT, MUR3060PT MUR3040PT -# -# K "',-'-'(., /(%- /(%-, 98 ,*.+ 0/ +# 0 , (-"' .,"' ,&%% "'' !- ,"'$ 98 ,*.+ 0/ +# 0 , (-"' "' + "+ 0"-! '( !- ,"'$ - &"'- -&)+-.+ ) / /+ )(0+",,")-"('0--, " / /+ (+0+.++'-&), 98 ,*.+ 0/ +- /(%- ))%" - , -&)+-.+ Figure 8. Current Derating, Case (Per Leg) Figure 6. Typical Forward Voltage (Per Leg) Figure 7. Typical Reverse Current (Per Leg) /+ +/+, /(%- /(%-, " / /+ (+0+.++'-&), > "',-'-'(.,(+0+.++'-&), "+ +/+,.++'- " +,",-"/ "'.-"/ %( )$ "/ " )"-"/ %( )$ "/ 98 ,*.+ 0/ -# "/ /+ (+0+ .++'- &), Figure 9. Current Derating, Ambient (Per Leg) Figure 10. Power Dissipation (Per Leg) http://onsemi.com 428 MUR3020PT, MUR3040PT, MUR3060PT MUR3060PT "+ +/+,.++'- -# -# Figure 12. Typical Reverse Current (Per Leg) K "',-'-'(., /(%- /(%-, 98 ,*.+ 0/ +- /(%- ))%" Figure 11. Typical Forward Voltage (Per Leg) 98 +# 0 , (-"' +(& ,&%% -( !- ,"'$ ,*.+ 0/ 98 ,*.+ 0/ +# 0 , (-"' "' + "+ 0"-! '( !- ,"'$ - &"'- -&)+-.+ - , -&)+-.+ Figure 13. Current Derating, Case (Per Leg) ) / /+ )(0+",,")-"('0--, " / /+ (+0+.++'-&), /+ +/+, /(%- /(%-, " / /+ (+0+.++'-&), > "',-'-'(.,(+0+.++'-&), " )"-"/ %( )$ "/ 98 ,*.+ 0/ +,",-"/ "'.-"/ %( ")$ " / -# Figure 14. Current Derating, Ambient (Per Leg) "/ /+ (+0+ .++'- &), Figure 15. Power Dissipation (Per Leg) http://onsemi.com 429 )E@ I ,"' % ).%, I .-2 2% I I I -"& BH 3#I GI +# +# 0 &1 .+/, ))%2 (+ )(0+ ).%, -+"' ,!(0' + -"& - - -#E@ - )E@ 3#I Figure 16. Thermal Response $ )"-'E GI-+',"'--!+&%+,",-''(+&%"3 MUR3020PT, MUR3040PT, MUR3060PT -# /+ +/+, /(%- /(%-, Figure 17. Typical Capacitance (Per Leg) http://onsemi.com 430 $ " " Preferred Devices " 18(3 (&5,),(34 . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: * * * * * * * * * http://onsemi.com Ultrafast 35 and 60 Nanosecond Recovery Time 175C Operating Junction Temperature Popular TO-247 Package High Voltage Capability to 600 Volts Low Forward Drop Low Leakage Specified @ 150C Case Temperature Current Derating Specified @ Both Case and Ambient Temperatures Epoxy Meets UL94, VO @ 1/8 High Temperature Glass Passivated Junction ULTRAFAST RECTIFIERS 30 AMPERES 200-600 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 4.3 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead Temperature for Soldering Purposes: * * 1 2 260C Max. for 10 Seconds Shipped 30 units per plastic tube Marking: U3020, U3060 3 TO-247 PSI CASE 340L PLASTIC MAXIMUM RATINGS MARKING DIAGRAM Please See the Table on the Following Page U30x0 U30x0 = Device Code x = 2 or 6 ORDERING INFORMATION Device Package Shipping MUR3020WT TO-247 30 Units/Rail MUR3060WT TO-247 30 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 3 431 Publication Order Number: MUR3020WT/D MUR3020WT, MUR3060WT MAXIMUM RATINGS (Per Leg) Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current @ 145C Symbol MUR3020WT MUR3060WT Unit VRRM VRWM VR 200 600 Volts IF(AV) 15 30 Amps Peak Repetitive Surge Current (Rated VR, Square Wave, 20 kHz, TC = 145C) IFM 30 Amps Nonrepetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM Total Device Operating Junction and Storage Temperature 200 150 Amps TJ, Tstg - 65 to +175 C RJC RJA 1.5 40 C/W THERMAL CHARACTERISTICS (Per Leg) Maximum Thermal Resistance -- Junction to Case -- Junction to Ambient ELECTRICAL CHARACTERISTICS (Per Leg) Maximum Instantaneous Forward Voltage (Note 1.) (IF = 15 Amp, TC = 150C) (IF = 15 Amp, TC = 25C) VF Maximum Instantaneous Reverse Current (Note 1.) (Rated DC Voltage, TJ = 150C) (Rated DC Voltage, TJ = 25C) iR Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 Amps/s) trr 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. http://onsemi.com 432 Volts 0.85 1.05 1.4 1.7 500 10 1000 10 35 60 A ns MUR3020WT, MUR3060WT MUR3020WT -# -# /+ +/+, /(%- /(%-, -=: 8JGK:H H=DLC 6G: INE>86A ;DG I=: =><=:HI KDAI6<: 9:K>8: >C I=: KDAI6<: <GDJE>C< -NE>86A G:K:GH: 8JGG:CI ;DG ADL:G KDAI6<: H:A:8I>DCH 86C 7: :HI>B6I:9 ;GDB I=:H: H6B: 8JGK:H >; /+ >H HJ;;>8>:CIAN 7:ADL G6I:9 /+ Figure 2. Typical Reverse Current (Per Leg)* K "',-'-'(., /(%- /(%-, " / /+ (+0+.++'-&), > "',-'-'(.,(+0+.++'-&), "+ +/+,.++'- 98 ,*.+ 0/ +- /(%- ))%" Figure 1. Typical Forward Voltage (Per Leg) - , -&)+-.+ 98 ,*.+ 0/ ) / /+ )(0+",,")-"('0--, " / /+ (+0+.++'-&), Figure 3. Current Derating, Case (Per Leg) " +,",-"/ %( )$ "/ +# 0 , (-"' .,"' ,&%% "'' !- ,"'$ 98 ,*.+ 0/ +# 0 , (-"' "' + "+ 0"-! '( !- ,"'$ - &"'- -&)+-.+ " )"-"/ %( )$ "/ ,*.+ 0/ -# 98 Figure 4. Current Derating, Ambient (Per Leg) "/ /+ (+0+ .++'- &), Figure 5. Power Dissipation (Per Leg) http://onsemi.com 433 MUR3020WT, MUR3060WT MUR3060WT "+ +/+,.++'- -# -# /+ +/+, /(%- /(%-, -=: 8JGK:H H=DLC 6G: INE>86A ;DG I=: =><=:HI KDAI6<: 9:K>8: >C I=: KDAI6<: <GDJE>C< -NE>86A G:K:GH: 8JGG:CI ;DG ADL:G KDAI6<: H:A:8I>DCH 86C 7: :HI>B6I:9 ;GDB I=:H: H6B: 8JGK:H >; /+ >H HJ;;>8>:CIAN 7:ADL G6I:9 /+ Figure 7. Typical Reverse Current (Per Leg)* K "',-'-'(., /(%- /(%-, " / /+ (+0+.++'-&), > "',-'-'(.,(+0+.++'-&), 98 ,*.+ 0/ +- /(%- ))%" Figure 6. Typical Forward Voltage (Per Leg) - , -&)+-.+ 98 +# 0 , (-"' +(& ,&%% -( !- ,"'$ ,*.+ 0/ 98 ,*.+ 0/ +# 0 , (-"' "' + "+ 0"-! '( !- ,"'$ - &"'- -&)+-.+ ) / /+ )(0+",,")-"('0--, " / /+ (+0+.++'-&), Figure 8. Current Derating, Case (Per Leg) " )"-"/ %( )$ "/ 98 ,*.+ 0/ +,",-"/ "'.-"/ %( ")$ " / -# Figure 9. Current Derating, Ambient (Per Leg) "/ /+ (+0+ .++'- &), Figure 10. Power Dissipation (Per Leg) http://onsemi.com 434 )E@ I ,"' % ).%, I .-2 2% I I I -"& BH 3#I GI +# +# 0 &1 .+/, ))%2 (+ )(0+ ).%, -+"' ,!(0' + -"& - - -#E@ - )E@ 3#I Figure 11. Thermal Response $ )"-'E GI-+',"'--!+&%+,",-''(+&%"3 MUR3020WT, MUR3060WT -# /+ +/+, /(%- /(%-, Figure 12. Typical Capacitance (Per Leg) http://onsemi.com 435 $ Preferred Devices " .53$)$45 " 18(3 (&5,),(34 http://onsemi.com . . . designed for use in switching power supplies, inverters, and as free wheeling diodes. These state-of-the-art devices have the following features: * Dual Diode Construction * Low Leakage Current * Low Forward Voltage * 175C Operating Junction Temperature * Labor Saving POWERTAP Package ULTRAFAST RECTIFIERS 200 AMPERES 200-400 VOLTS Mechanical Characteristics: * * * * * * * Case: Epoxy, Molded with metal heatsink base Weight: 80 grams (approximately) Finish: All External Surfaces Corrosion Resistant Top Terminal Torque: 25-40 lb-in max Base Plate Torques: See procedure given in the Package Outline Section Shipped 25 units per foam Marking: UP20020, UP20040 MAXIMUM RATINGS PLASTIC CASE 357C POWERTAP II Please See the Table on the Following Page MARKING DIAGRAM YYWW UP200x0 UP200x0 x YY WW = Device Code = 2 or 4 = Year = Work Week ORDERING INFORMATION Device Package Shipping MURP20020CT POWERTAP II 25 Units/Tray MURP20040CT POWERTAP II 25 Units/Tray Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 3 436 Publication Order Number: MURP20020CT/D MURP20020CT, MURP20040CT MAXIMUM RATINGS Rating Symbol MURP20020CT MURP20040CT Unit VRRM VRWM VR 200 400 Volts IF(AV) 200 (TC = 130C) 100 (TC = 130C) 200 (TC = 100C) 100 (TC = 100C) Amps Peak Repetitive Forward Current, Per Leg (Rated VR, Square Wave, 20 kHz), TC = 95C IFRM 200 200 Amps Nonrepetitive Peak Surge Current Per Leg (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 800 800 Amps Operating Junction Temperature TJ 55 to +175 55 to +175 C Storage Temperature Tstg 55 to +150 55 to +150 C 0.45 0.45 C/W 1.00 1.10 0.95 1.30 1.75 1.15 1000 150 500 50 50 75 Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) Per Device Per Leg THERMAL CHARACTERISTICS (Per Leg) Symbol Rating Thermal Resistance, Junction to Case RJC Max Unit ELECTRICAL CHARACTERISTICS (Per Leg) Instantaneous Forward Voltage (Note 1.) (iF = 100 Amps, TC = +25C) (iF = 200 Amps, TC = 25C) (iF = 100 Amps, TC = 125C) vF Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 125C) (Rated dc Voltage, TC = 25C) iR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amps/s) trr 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. http://onsemi.com 437 Volts A ns " 1)5 (&17(3: 18(3 (&5,),(3 POWERTAP III Package State of the art geometry features epitaxial construction with glass passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes. * Soft Recovery Rectifier * Low IRRM Losses * Highly Stable Glass Passivated Junction http://onsemi.com SOFT RECOVERY RECTIFIER 100 AMPERES 400 VOLTS Mechanical Characteristics: * * * * * * * Dual Die Construction Case: Epoxy, Molded with Plated Copper Heatsink Base Weight: 40 Grams (approximately) Finish: All External Surfaces Corrosion Resistant Top Terminal Torque: 25 - 40 lb-in max. Shipped 50 Units per Foam Marking: MSRP10040 MAXIMUM RATINGS Rating Symbol Max Unit VRRM VRWM VR 400 V IO 100 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = TBDC) IFRM 200 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 100C) Storage/Operating Case Temperature Range Operating Junction Temperature Range Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 1 POWERTAP III CASE 357D PLASTIC MARKING DIAGRAM MSRP10040 800 A MSRP10040 = Device Code Tstg, TC -55 to +150 C TJ -55 to +150 C ORDERING INFORMATION Device MSRP10040 438 Package Shipping POWERTAP III 50 Units/Tray Publication Order Number: MSRP10040/D MSRP10040 THERMAL CHARACTERISTICS Rating Thermal Resistance -- Junction-to-Case Symbol Value Unit RJC 0.5 C/W ELECTRICAL CHARACTERISTICS VF Typical Instantaneous Forward Voltage (Note 1.) (IF = 100 A) (IF = 200 A) IR Typical Instantaneous Reverse Current (VR = 400 V) (VR = 200 V) TJ = 25C TJ = 100C 1.75 2.00 1.25 1.50 TJ = 25C TJ = 100C 100 50 500 250 Volts A Typical Reverse Recovery Time (Note 2.) (VR = 30 V, IF = 10 A, di/dt = 200 A/s) trr 75 ns Typical Peak Reverse Recovery Current (VR = 30 V, IF = 10 A, di/dt = 200 A/s) Irm 7.0 Amps 1. Pulse Test: Pulse Width 250 s, Duty Cycle 2%. 2. trr measured projecting from 25% of IRM to zero. http://onsemi.com 439 " 1)5 (&17(3: 18(3 (&5,),(3 Designed for boost converter or hard-switched converter applications, especially for Power Factor Correction application. It could also be used as a free wheeling diode in variable speed motor control applications and switching mode power supplies. These state-of-the-art devices have the following features: http://onsemi.com SOFT RECOVERY POWER RECTIFIER 15 AMPERES 600 VOLTS * Soft Recovery with Low Reverse Recovery Charge (QRR) and Peak * * * * * * Reverse Recovery Current (IRRM) 150C Operating Junction Temperature Popular TO-220 Package Epoxy meets UL94, VO @ 1/8 Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction 1 4 3 Mechanical Characteristics: * Case: Molded Epoxy * Weight: 1.9 Grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * MARKING DIAGRAM 4 TO-220 CASE 221B PLASTIC Leads Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped in 50 Units per Plastic Tube Marking: MSR1560 4 MSR1560 1 3 1 3 MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 600 V Average Rectified Forward Current (At Rated VR, TC = 125C) IO 15 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz,TC = 125C) IFRM 30 A Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM 100 A Tstg, TC -65 to +150 C TJ -65 to +150 C Symbol Value Unit RJC 1.6 C/W RJA 72.8 Storage/Operating Case Temperature Operating Junction Temperature ORDERING INFORMATION Device MSR1560 Package Shipping TO-220 50 Units/Rail THERMAL CHARACTERISTICS Parameter Thermal Resistance - Junction-to-Case Thermal Resistance - Junction-to-Ambient Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 440 Publication Order Number: MSR1560/D MSR1560 ELECTRICAL CHARACTERISTICS Maximum a u Instantaneous s a a eous Forward o a d Voltage o age (Note ( o e 1.)) (I ( F = 15 5 A)) VF TJ = 150C 1.8 1.5 1.4 1.2 TJ = 25C TJ = 150C 15 0.4 5000 100 TJ = 25C TJ = 100C 45 35 65 54 s = tb/ta .67 .74 IRRM 2.3 3.2 A QRR 31 78 nC Typical Maximum a u Instantaneous s a a eous Reverse e e se Current Cu e (V ( R = 600 V)) IR Typical Maximum a u Reverse e e se Recovery eco e y Time e ((Note o e 2.)) ((VR = 30 V,, IF = 1 A,, d di/dt /d = 100 00 A/s) /s) trr Typical Typical Recovery Softness Factor (VR = 30 V, IF = 1 A, di/dt = 100 A/s) Typical Peak Reverse Recovery Current (VR = 30 V, IF = 1 A, di/dt = 100 A/s) Typical Reverse Recovery Charge (VR = 30 V, IF = 1 A, di/dt = 100 A/s) 1. Pulse Test: Pulse Width 380 s, Duty Cycle 2% 2. TRR measured projecting from 25% of IRRM to zero current nss VF @ 175C IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) VF @ 175C VF @ 25C 10 VF @ 100C 1 0.1 0.3 A 100 100 zl V TJ = 25C 0.7 1.1 1.5 1.9 2.3 VF, INTANTANEOUS VOLTAGE (VOLTS) VF @ 25C 10 VF @ 100C 1 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 VF, INSTANTANEOUS FORWARD CURRENT (AMPS) 2.7 Figure 1. Maximum Forward Voltage Figure 2. Typical Forward Voltage http://onsemi.com 441 MSR1560 1000 IR, REVERSE CURRENT (A) IR, REVERSE CURRENT (A) 10000 VF @ 175C 1000 100 VF @ 100C 10 VF @ 25C 1 0.1 0 100 200 300 400 500 Ir @ 100C 1 0.1 Ir @ 25C 0.01 0 100 200 300 400 500 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Maximum Reverse Current Figure 4. Typical Reverse Current 600 30 dc PF(AV), AVERAGE POWER DISSIPATION (WATTS) IF(AV), AVERAGE FORWARD Ir @ 175C 10 0.001 600 25 TJ = 175C 20 TJ = 175C 20 15 Square Wave 10 Square Wave dc 10 5 0 0 50 100 0 200 150 0 10 20 TC, CASE TEMPERATURE (C) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Power Dissipation 350 400 TJ = 25C TJ = 25C 300 C, CAPACITANCE (pF) 350 C, CAPACITANCE (pF) 100 300 250 200 150 100 250 200 150 100 50 50 0 0 10 20 30 40 50 0 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 7. Maximum Capacitance Figure 8. Typical Capacitance http://onsemi.com 442 50 MSR1560 60 80 50 trr Time (nsec) Time (nsec) 60 Trr vs. di/dt @ 25C 40 30 ta vs. di/dt @ 25C 40 ta tb 20 20 tb vs. di/dt @ 25C 100 175 0 25 250 75 125 dI/dt (A/S) TEMPERATURE (C) Figure 9. Typical Trr vs. di/dt Figure 10. Typical Trr vs. Temperature 3 175 50 40 IF = 1 A TJ = 25C 2 IF = 1 A 30 TJ = 25C 20 1 0 25 75 125 175 225 25 100 175 dI/dt (A/S) dIF/dt (A/S)) Figure 11. Typical Peak Reverse Recovery Current Figure 12. Typical Reverse Recovery Charge EOFF, SWITCHING OFF LOSSES (J) IRRM, PEAK RECOVERY CURRENT (AMPS) 0 25 QRR, REVERSE RECOVERY CHARGE (nC) 10 65 55 IF = 1 A VR = 30 V 45 35 25 25 100 175 dIF/dt (A/S) Figure 13. Typical Switching Off Losses http://onsemi.com 443 250 250 MSR1560 R(t), TRANSIENT THERMAL RESISTANCE 10 ID = 0.5 1 0.1 0.05 0.01 Single Pulse 0.1 0.0001 0.001 0.01 0.1 t, Time (S) Figure 14. Transient Thermal Response http://onsemi.com 444 1 10 CHAPTER 5 Standard and Fast Recovery Data Sheets http://onsemi.com 445 http://onsemi.com 446 1N4004 and 1N4007 are Preferred Devices 9,$. ($' 5$0'$3' (&17(3: (&5,),(34 http://onsemi.com This data sheet provides information on subminiature size, axial lead mounted rectifiers for general-purpose low-power applications. LEAD MOUNTED RECTIFIERS 50-1000 VOLTS DIFFUSED JUNCTION Mechanical Characteristics * Case: Epoxy, Molded * Weight: 0.4 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * * * Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 220C Max. for 10 Seconds, 1/16 from case Shipped in plastic bags, 1000 per bag. Available Tape and Reeled, 5000 per reel, by adding a "RL" suffix to the part number Available in Fan-Fold Packaging, 3000 per box, by adding a "FF" suffix to the part number Polarity: Cathode Indicated by Polarity Band Marking: 1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007 CASE 59 AXIAL LEAD PLASTIC MARKING DIAGRAM AL 1N 400x YYWW AL = Assembly Location 1N400x = Device Number x = 1, 2, 3, 4, 5, 6 or 7 YY = Year WW = Work Week MAXIMUM RATINGS Rating Symbol 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Unit *Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 Volts *Non-Repetitive Peak Reverse Voltage (halfwave, single phase, 60 Hz) VRSM 60 120 240 480 720 1000 1200 Volts VR(RMS) 35 70 140 280 420 560 700 Volts *RMS Reverse Voltage *Average Rectified Forward Current (single phase, resistive load, 60 Hz, TA = 75C) IO 1.0 Amp *Non-Repetitive Peak Surge Current (surge applied at rated load conditions) IFSM 30 (for 1 cycle) Amp Operating and Storage Junction Temperature Range TJ Tstg -65 to +175 C *Indicates JEDEC Registered Data ORDERING INFORMATION See detailed ordering and shipping information on page 448 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 6 447 Publication Order Number: 1N4001/D 1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007 ELECTRICAL CHARACTERISTICS* Rating Maximum Instantaneous Forward Voltage Drop (iF = 1.0 Amp, TJ = 25C) Maximum Full-Cycle Average Forward Voltage Drop (IO = 1.0 Amp, TL = 75C, 1 inch leads) Maximum Reverse Current (rated dc voltage) (TJ = 25C) (TJ = 100C) Typ Max Unit vF 0.93 1.1 Volts VF(AV) - 0.8 Volts 0.05 1.0 10 50 - 30 A IR Maximum Full-Cycle Average Reverse Current (IO = 1.0 Amp, TL = 75C, 1 inch leads) IR(AV) *Indicates JEDEC Registered Data ORDERING & SHIPPING INFORMATION Device Symbol Package Shipping 1N4001 Axial Lead 1000 Units/Bag 1N4001FF Axial Lead 3000 Units/Box 1N4001RL Axial Lead 5000/Tape & Reel 1N4002 Axial Lead 1000 Units/Bag 1N4002FF Axial Lead 3000 Units/Box 1N4002RL Axial Lead 5000/Tape & Reel 1N4003 Axial Lead 1000 Units/Bag 1N4003FF Axial Lead 3000 Units/Box 1N4003RL Axial Lead 5000/Tape & Reel 1N4004 Axial Lead 1000 Units/Bag 1N4004FF Axial Lead 3000 Units/Box 1N4004RL Axial Lead 5000/Tape & Reel 1N4005 Axial Lead 1000 Units/Bag 1N4005FF Axial Lead 3000 Units/Box 1N4005RL Axial Lead 5000/Tape & Reel 1N4006 Axial Lead 1000 Units/Bag 1N4006FF Axial Lead 3000 Units/Box 1N4006RL Axial Lead 5000/Tape & Reel 1N4007 Axial Lead 1000 Units/Bag 1N4007FF Axial Lead 3000 Units/Box 1N4007RL Axial Lead 5000/Tape & Reel http://onsemi.com 448 A 5+36 1N5404 and 1N5406 are Preferred Devices 9,$.($' 5$0'$3' (&17(3: (&5,),(34 Lead mounted standard recovery rectifiers are designed for use in power supplies and other applications having need of a device with the following features: * * * * * * http://onsemi.com High Current to Small Size High Surge Current Capability Low Forward Voltage Drop Void-Free Economical Plastic Package Available in Volume Quantities Plastic Meets UL 94V-0 for Flammability STANDARD RECOVERY RECTIFIERS 50-1000 VOLTS 3.0 AMPERES Mechanical Characteristics * Case: Epoxy, Molded * Weight: 1.1 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * AXIAL LEAD CASE 267-05 STYLE 1 Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 220C Max. for 10 Seconds, 1/16 from case Polarity: Cathode Indicated by Polarity Band Marking: 1N5400, 1N5401, 1N5402, 1N5404, 1N5406, 1N5407, 1N5408 MARKING DIAGRAM AL 1N 540x YYWW AL = Assembly Location 1N540x = Device Number x = 0, 1, 2, 4, 6, 7 or 8 YY = Year WW = Work Week MAXIMUM RATINGS Please See the Table on the Following Page ORDERING INFORMATION Device Package Shipping 1N5400 Axial Lead 500 Units/Box 1N5400RL Axial Lead 1200/Tape & Reel 1N5401 Axial Lead 500 Units/Box 1N5401RL Axial Lead 1200/Tape & Reel 1N5402 Axial Lead 500 Units/Box 1N5402RL Axial Lead 1200/Tape & Reel 1N5404 Axial Lead 500 Units/Box 1N5404RL Axial Lead 1200/Tape & Reel 1N5406 Axial Lead 500 Units/Box 1N5406RL Axial Lead 1200/Tape & Reel 1N5407 Axial Lead 500 Units/Box 1N5407RL Axial Lead 1200/Tape & Reel 1N5408 Axial Lead 500 Units/Box 1N5408RL Axial Lead 1200/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 4 449 Publication Order Number: 1N5400/D 1N5400 thru 1N5408 MAXIMUM RATINGS Symbol 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 50 100 200 400 600 800 1000 Volts Non-repetitive Peak Reverse Voltage VRSM 100 200 300 525 800 1000 1200 Volts Average Rectified Forward Current (Single Phase Resistive Load, 1/2 Leads, TL = 105C) IO 3.0 Amp Non-repetitive Peak Surge Current (Surge Applied at Rated Load Conditions) IFSM 200 (one cycle) Amp Operating and Storage Junction Temperature Range TJ Tstg - 65 to +170 - 65 to +175 C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (PC Board Mount, 1/2 Leads) Symbol Typ Unit RJA 53 C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Forward Voltage (IF = 3.0 Amp, TA = 25C) vF - - 1.0 Volts Reverse Current (Rated dc Voltage) TA = 25C TA = 150C IR - - - - 10 100 A Ratings at 25C ambient temperature unless otherwise specified. 60 Hz resistive or inductive loads. For capacitive load, derate current by 20%. NOTE 1 -- AMBIENT MOUNTING DATA Data shown for thermal resistance junction-to-ambient (RJA) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR RJA IN STILL AIR Mounting Method 1 2 Lead Length, L (IN) 1/8 1/4 1/2 3/4 55 51 53 50 63 59 61 58 C/W C/W 3 28 C/W MOUNTING METHOD 1 P.C. Board Where Available Copper Surface area is small MOUNTING METHOD 3 P.C. Board with 1-1/2" x 1-1/2" Copper Surface EEEEEEEEE E EEEEEEEEE E E E E EEEEEEEE EEEEEEEE L L RJA L = 1/2" MOUNTING METHOD 2 Vector Push-In Terminals T-28 Board Ground Plane L L http://onsemi.com 450 1N5400 thru 1N5408 200 400 TJ = 25C )"-'E 100 70 iF, INSTANTANEOUS FORWARD CURRENT (AMPS) Surge Applied at Rated Load Conditions f = 60Hz 300 TYPICAL 50 30 200 1 CYCLE 100 90 80 70 60 20 50 40 2.0 3.0 1.0 5.0 7.0 10 20 30 50 70 100 10 NUMBER OF CYCLES 7.0 Figure 2. Maximum Nonrepetitive Surge Current 5.0 8.0 3.0 L = 1/32" 7.0 2.0 6.0 1/4" 5.0 1.0 4.0 0.7 Resistive Load Both Leads to Heat Sink with Lengths as Shown 1/2" 3.0 0.5 2.0 0.3 0.2 0.4 1.0 0.8 1.2 2.0 1.6 2.8 2.4 0 3.2 40 60 80 100 120 140 160 180 vF, INSTANTANEOUS VOLTAGE (VOLTS) TL, LEAD TEMPERATURE (C) Figure 1. Forward Voltage Figure 3. Current Derating Various Lead Lengths 4.0 RJA = 28C/W I(PK) 3.5 I(AV) = Capacitive Loads 3.0 5.0 10 20 2.5 2.0 1.5 1.0 RJA = 50C/W I(PK) 0.5 Note for Resistive Load 0 40 60 80 I(AV) 100 = 120 140 160 180 TA, AMBIENT TEMPERATURE (C) Figure 4. Current Derating PC Board Mounting http://onsemi.com 451 1N4935 and 1N4937 are Preferred Devices 9,$.($' $45(&17(3: (&5,),(34 Axial-lead, fast-recovery rectifiers are designed for special applications such as dc power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference and free wheeling diodes. A complete line of fast recovery rectifiers having typical recovery time of 150 nanoseconds providing high efficiency at frequencies to 250 kHz. http://onsemi.com FAST RECOVERY RECTIFIERS 1.0 AMPERE 50-600 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 0.4 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * * Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 220C Max. for 10 Seconds, 1/16 from case Shipped in plastic bags, 1000 per bag. Available Tape and Reeled, 5000 per reel, by adding a "RL" suffix to the part number Polarity: Cathode Indicated by Polarity Band Marking: 1N4933, 1N4934, 1N4935, 1N4936, 1N4937 CASE 59 AXIAL LEAD PLASTIC MARKING DIAGRAM AL 1N 493x YYWW AL = Assembly Location 1N493x = Device Number x = 3, 4, 5, 6 or 7 YY = Year WW = Work Week MAXIMUM RATINGS Please See the Table on the Following Page ORDERING INFORMATION Device Package Shipping 1N4933 Axial Lead 1000 Units/Bag 1N4933RL Axial Lead 5000/Tape & Reel 1N4934 Axial Lead 1000 Units/Bag 1N4934RL Axial Lead 5000/Tape & Reel 1N4935 Axial Lead 1000 Units/Bag 1N4935RL Axial Lead 5000/Tape & Reel 1N4936 Axial Lead 1000 Units/Bag 1N4936RL Axial Lead 5000/Tape & Reel 1N4937 Axial Lead 1000 Units/Bag 1N4937RL Axial Lead 5000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 4 452 Publication Order Number: 1N4933/D 1N4933, 1N4934, 1N4935, 1N4936, 1N4937 MAXIMUM RATINGS (Note 1.) Rating *Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage *Non-Repetitive Peak Reverse Voltage RMS Reverse Voltage *Average Rectified Forward Current (Single phase, resistive load, TA = 75C) (Note 2.) Symbol 1N4933 1N4934 1N4935 1N4936 1N4937 Unit VRRM VRWM VR 50 100 200 400 600 Volts VRSM VR(RMS) 75 35 150 70 250 140 450 280 650 420 Volts IO 1.0 Amp *Non-Repetitive Peak Surge Current (Surge applied at rated load conditions) IFSM 30 Amps Operating Junction Temperature Range Storage Temperature Range TJ Tstg - 65 to +150 - 65 to +150 C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (Typical Printed Circuit Board Mounting) Symbol Max Unit RJC 65 C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Instantaneous Forward Voltage (IF = 3.14 Amp, TJ = 125C) vF - 1.0 1.2 Volts Forward Voltage (IF = 1.0 Amp, TA = 25C) VF - 1.0 1.1 Volts IR - - 1.0 50 5.0 100 A Symbol Min Typ Max Unit - - 150 175 200 300 - 1.0 2.0 *Reverse Current (Rated dc Voltage) TA = 25C TA = 100C *REVERSE RECOVERY CHARACTERISTICS Characteristic Reverse Recovery Time (IF = 1.0 Amp to VR = 30 Vdc) (IFM = 15 Amp, di/dt = 10 A/s) trr Reverse Recovery Current (IF = 1.0 Amp to VR = 30 Vdc) IRM(REC) 1. Ratings at 25C ambient temperature unless otherwise specified. 2. Derate by 20% for capacitive loads. *Indicates JEDEC Registered Data for 1N4933 Series. http://onsemi.com 453 ns Amp MR852 and MR856 are Preferred Devices 9,$. ($' $45 (&17(3: (&5,),(34 Axial lead mounted fast recovery power rectifiers are designed for special applications such as dc power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference and free wheeling diodes. A complete line of fast recovery rectifiers having typical recovery time of 100 nanoseconds providing high efficiency at frequencies to 250 kHz. http://onsemi.com FAST RECOVERY POWER RECTIFIERS 3.0 AMPERES 50-600 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 1.1 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * * Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 220C Max. for 10 Seconds, 1/16 from case Shipped in plastic bags, 500 per box Available Tape and Reeled, 1200 per reel, by adding a "RL" suffix to the part number Polarity: Cathode Indicated by Polarity Band Marking: MR850, MR851, MR852, MR854, MR856 AXIAL LEAD CASE 267-05 STYLE 1 MARKING DIAGRAM AL MR 85x YYWW MAXIMUM RATINGS AL MR85x x YY WW Please See the Table on the Following Page = Assembly Location = Device Number = 0, 1, 2, 4 or 6 = Year = Work Week ORDERING INFORMATION Device Package Shipping MR850 Axial Lead 500 Units/Box MR850RL Axial Lead 1200/Tape & Reel MR851 Axial Lead 500 Units/Box MR851RL Axial Lead 1200/Tape & Reel MR852 Axial Lead 500 Units/Box MR852RL Axial Lead 1200/Tape & Reel MR854 Axial Lead 500 Units/Box MR854RL Axial Lead 1200/Tape & Reel MR856 Axial Lead 500 Units/Box MR856RL Axial Lead 1200/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 3 454 Publication Order Number: MR850/D MR850, MR851, MR852, MR854, MR856 MAXIMUM RATINGS Symbol MR850 MR851 MR852 MR854 MR856 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 50 100 200 400 600 Volts Non-Repetitive Peak Reverse Voltage VRSM 75 150 250 450 650 Volts VR(RMS) 35 70 140 280 420 Volts RMS Reverse Voltage Average Rectified Forward Current (Single phase resistive load, TA = 80C) IO 3.0 Amp Non-Repetitive Peak Surge Current (surge applied at rated load conditions) IFSM 100 (one cycle) Amp Operating and Storage Junction Temperature Range TJ, Tstg - 65 to +125 - 65 to +150 C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (Recommended Printed Circuit Board Mounting) Symbol Max Unit RJA 28 C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Forward Voltage (IF = 3.0 Amp, TJ = 25C) VF - 1.04 1.25 Volts Reverse Current (rated dc voltage) TJ = 25C MR850 MR851 MR852 TJ = 80C MR854 MR856 IR - - - - - - 2.0 - 60 - - 100 10 150 150 200 250 300 A Symbol Min Typ Max Unit - - 100 150 200 300 - - 2.0 REVERSE RECOVERY CHARACTERISTICS Characteristic Reverse Recovery Time (IF = 1.0 Amp to VR = 30 Vdc) (IF = 15 Amp, di/dt = 10 A/s) trr Reverse Recovery Current (IF = 1.0 Amp to VR = 30 Vdc) IRM(REC) http://onsemi.com 455 ns Amp (3,(4 63)$&( 1605 5$0'$3' (&17(3: 18(3 (&5,),(3 SMA Power Surface Mount Package Features construction with glass passivation. Ideally suited for surface mounted Automotive application. * Compact Package with J-Bend Leads Ideal for Automated Handling * Stable, High Temperature, Glass Passivated Junction Mechanical Characteristics * Case: Molded Epoxy Epoxy meets UL94, VO at 1/8 http://onsemi.com STANDARD RECOVERY RECTIFIERS 1.0 AMPERES 300-1000 VOLTS * Weight: 70 mg (Approximately) * Finish: All External Surfaces are Corrosion Resistant and Terminal Leads are Readily Solderable * Lead and Mounting Surface Temperature for Soldering Purposes: * * * 260C Max. for 10 seconds in Solder Bath Polarity: Notch and/or Band in Plastic Body Indicates Cathode Lead Available in 12 mm Tape, 5000 Units per 13 inch Reel, Add "T3" Suffix to Part Number Marking: MRA4003T3 -- R13 Marking: MRA4004T3 -- R14 Marking: MRA4005T3 -- R15 Marking: MRA4006T3 -- R16 Marking: MRA4007T3 -- R17 CASE 403B SMA PLASTIC MARKING DIAGRAM R1x LL ## MAXIMUM RATINGS R1x x LL ## Please See the Table on the Following Page = Device Code = 3, 4, 5, 6 or 7 = Location Code = Date Code ORDERING INFORMATION Device Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 1 456 Package Shipping MRA4003T3 SMA 5000/Tape & Reel MRA4004T3 SMA 5000/Tape & Reel MRA4005T3 SMA 5000/Tape & Reel MRA4006T3 SMA 5000/Tape & Reel MRA4007T3 SMA 5000/Tape & Reel Publication Order Number: MRA4003T3/D MRA4003T3 Series MAXIMUM RATINGS Value Rating Symbol MRA4003T3 MRA4004T3 MRA4005T3 MRA4006T3 MRA4007T3 Unit VRRM VRWM VR 300 400 600 800 1000 Volts Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Avg. Rectified Forward Current (At Rated VR, TL = 150C) IO 1 Amp Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TL = 150C) IFRM 2 Amps Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM 30 Amps Tstg, TC -55 to 150 C TJ -55 to 175 C Storage/Operating Case Temperature Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RJL RJA 16.2 88.3 C/W Thermal Resistance, Junction to Lead (Note 1.) Thermal Resistance, Junction to Ambient (Note 2.) ELECTRICAL CHARACTERISTICS Value Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 3.) (IF = 1 A) (IF = 2 A) VF Maximum Instantaneous Reverse Current (at rated DC voltage) IR TJ = 25C TJ = 100C 1.1 1.18 1.04 1.12 10 50 Unit Volts A 100E-6 10 TJ = 150C 1.0 -40C 0.1 100C 25C IR , REVERSE CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 1. Minimum Pad Size 2. 1 inch Pad Size 3. Pulse Test: Pulse Width 250 s, Duty Cycle 2%. TJ = 150C 10E-6 1.0E-6 100C 100E-9 0.01 25C 10E-9 1.0E-9 0.4 0.6 0.8 1.0 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0 Figure 1. Typical Forward Voltage 50 100 150 200 250 300 350 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Typical Reverse Current http://onsemi.com 457 400 1.6 )( /+ )(0+",,")-"('0--, IO, AVERAGE FORWARD CURRENT (AMPS) MRA4003T3 Series dc 1.4 Square Wave 1.2 1.0 Ipk/IO = 0.8 5 10 0.6 20 0.4 Freq = 20 kHz 0.2 0 0 20 40 60 100 120 80 TL, LEAD TEMPERATURE (C) 140 1.8 dc 1.6 1.4 Square Wave 1.2 Ipk/IO = 1.0 5 0.8 10 0.6 20 0.4 0.2 0 0 160 Figure 3. Current Derating per Leg 0.5 1.0 1.5 IO, AVERAGE FORWARD CURRENT (AMPS) 2.0 Figure 4. Forward Power Dissipation per Leg C, CAPACITANCE (pF) 100 TJ = 25C 10 1 0 20 40 60 80 100 120 140 160 VR, REVERSE VOLTAGE (VOLTS) 180 200 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 5. Capacitance 1.0 RJL (Min Pad Board) RJA (1 inch Pad Board) 0.1 RJL(t) = RJL * r(t) 0.01 0.001 10E-6 100E-6 1E-3 10E-3 100E-3 1E+0 t, TIME (s) Figure 6. Thermal Response http://onsemi.com 458 10E+0 100E+0 1E+3 10E+3 63)$&( 1605 5$0'$3' (&17(3: 18(3 (&5,),(3 SMB Power Surface Mount Package Features mesa epitaxial construction with glass passivation. Ideally suited for high frequency switching power supplies; free wheeling diodes and polarity protection diodes. * Compact Package with J-Bend Leads Ideal for Automated Handling * Stable, High Temperature, Glass Passivated Junction Mechanical Characteristics: * * * * * * * * Case: Molded Epoxy Epoxy Meets UL94, VO at 1/8 Weight: 95 mg (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Maximum Temperature of 260C / 10 Seconds for Soldering Available in 12 mm Tape, 2500 Units per 13 inch Reel, Add "T3" Suffix to Part Number Polarity: Notch and/or band in Plastic Body Indicates Cathode Lead Marking: RGG http://onsemi.com STANDARD RECOVERY RECTIFIER 1.5 AMPERES 400 VOLTS SMB CASE 403A PLASTIC MARKING DIAGRAM MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 400 V Average Rectified Forward Current (At Rated VR, TI = 118C) IO 1.5 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TI = 118C) IFRM 3.0 A Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM 50 A Storage/Operating Case Temperature Range Operating Junction Temperature Range Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 2 YWW RGG LL Y WW RGG LL = Year = Work Week = Device Code = Location Code ORDERING INFORMATION Tstg, TC -55 to 150 C TJ -55 to 150 C 459 Device MRS1504T3 Package SMB Shipping 2500/Tape & Reel Publication Order Number: MRS1504T3/D MRS1504T3 THERMAL CHARACTERISTICS Rating Thermal Resistance - Junction-to-Lead (Note 2.) Thermal Resistance - Junction-to-Ambient (on 1 sq. Cu. PCB pattern) Symbol Value Unit Rtjl Rtja 18 79 C/W ELECTRICAL CHARACTERISTICS VF Maximum Instantaneous Forward Voltage (Note 1.), see Figure 2 (IF = 1.5 A) (IF = 2.25 A) IR Maximum Instantaneous Reverse Current, see Figure 4 (VR = 400 V) (VR = 200 V) TJ = 25C TJ = 100C 1.04 1.10 0.96 1.02 TJ = 25C TJ = 100C 1.0 0.5 340 180 V A ""',-'-'(.,(+0+.++'-&), ""',-'-'(.,(+0+.++'-&), 1. Pulse Test: Pulse Width 250 s, Duty Cycle 2.0%. 2. Minimum pad size -# -# -# -# -# -# -# / "',-'-'(., (+0+ /(%- /(%-, / &1"&.& "',-'-'(., (+0+ /(%- /(%-, Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage -# -# -# " +&1"&.&+/+,.++'-&), " ++/+,.++'-&), -# -# -# /+ +/+, /(%- /(%-, /+ +/+, /(%- /(%-, Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current http://onsemi.com 460 )( /+ )(0+",,")-"('0--, +* @!O 98 ,*.+ 0/ "E@ "D "E@ "D "E@ "D "E@ "D 98 ,*.+ 0/ "E@ "D "E@ "D "E@ "D "E@ "D -% % -&)+-.+ "( /+ (+0+ .++'- &), Figure 5. Current Derating Figure 6. Forward Power Dissipation -# )"-'E " ( /+ (+0+.++'-&), MRS1504T3 /+ +/+, /(%- /(%-, Figure 7. Capacitance http://onsemi.com 461 + - -+',"'--!+&%+,",-''(+&%"3 MRS1504T3 +I?AI +I?AGI - -"& H + - -+',"'--!+&%+,",-''(+&%"3 Figure 8. Thermal Response Junction to Lead +I?AI +I?AGI - -"& H Figure 9. Thermal Response Junction to Ambient http://onsemi.com 462 MR2504 and MR2510 are Preferred Devices (',6/633(05 ,.,&10 (&5,),(34 . . . compact, highly efficient silicon rectifiers for medium-current applications requiring: * High Current Surge -- 400 Amperes @ TJ = 175C * Peak Performance @ Elevated Temperature -- 25 Amperes @ * * TC = 150C Low Cost Compact, Molded Package -- For Optimum Efficiency in a Small Case Configuration Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.8 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminals are http://onsemi.com MEDIUM-CURRENT SILICON RECTIFIERS 25 AMPERES 200-1000 VOLTS DIFFUSED JUNCTION Readily Solderable * Lead Temperature for Soldering Purposes: requires a custom * * MICRODE BUTTON CASE 193 temperature soldering profile Polarity: Cathode Polarity Band Shipped 5000 units per box MARKING DIAGRAM MAXIMUM RATINGS Please See the Table on the Following Page MR25xx LYYWW MR25xx = Device Code xx = 02, 04 or 10 L = Location Code YY = Year WW = Work Week ORDERING INFORMATION Device Package Shipping MR2502 Microde Button 5000 Units/Box MR2504 Microde Button 5000 Units/Box MR2510 Microde Button 5000 Units/Box Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 3 463 Publication Order Number: MR2500/D MR2502, MR2504, MR2510 MAXIMUM RATINGS Symbol MR2502 MR2504 MR2510 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Characteristic VRRM VRWM VR 200 400 1000 Volts Non-Repetitive Peak Reverse Voltage (Halfwave, single phase, 60 Hz peak) VRSM 240 480 1200 Volts Average Rectified Forward Current (Single phase, resistive load, 60 Hz, TC = 150C) IO 25 Amps Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM 400 (for 1 cycle) Amps Operating and Storage Junction Temperature Range TJ, Tstg 65 to +175 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RJC 1.0 C/W Symbol Max Unit Maximum Instantaneous Forward Voltage (iF = 78.5 Amps, TC = 25C) vF 1.18 Volts Maximum Reverse Current (rated dc voltage) TC = 25C TC = 100C IR Thermal Resistance, Junction to Case (Single Side Cooled) ELECTRICAL CHARACTERISTICS Characteristics and Conditions A 100 500 http://onsemi.com 464 MR2502, MR2504, MR2510 ",& )$!%0/.++'-&) -2)"% -# &1"&.& /++& &2 ))%" -0' ! 2% ( ,.+ -! -# '(- ", -# )+"(+ -( ,.+ ; !O 2% -# '.&+ ( 2%, Figure 2. Non-Repetitive Surge Current (""'-B/ >"',-'-'(.,(+0+.++'-&) -2)"% +' Figure 1. Forward Voltage Figure 3. Forward Voltage Temperature Coefficient " & R,>C:R06K:R+:H>HI>K:R%D69 " / 6E68>I>K: %D69H > "',-'-'(., (+0+ .++'- &) K "',-'-'(., (+0+ /(%- /(%-, 98 )/ /+ )(0+",,")-"('0--, " / /+ (+0+.++'-&) ,"' 0/ )"-"/ %(, " & " / 98 ,*.+ 0/ ,"' 0/ +,",-"/ %( - , -&)+-.+ "/ /+ (+0+ .++'- &) Figure 4. Current Derating Figure 5. Forward Power Dissipation http://onsemi.com 465 GI-+',"'--!+&%+,",-' '(+&%"3 MR2502, MR2504, MR2510 +#I +# * GI '(- I -"& BH Figure 6. Thermal Response )E@ )E@ IE .-2 2% IE I )$ )(0+ )E@ >H E:6@ D; 6C :FJ>K6A:CI HFJ6G: EDL:G EJAH: -"& I )"-'E I GG +/+,+(/+2-"&H I ;G (+0++(/+2-"&H ;G / Figure 7. Capacitance /+ +/+, /(%- /(%-, ;G / I;G ; %% /", %% /", 1)- &+ -# where TJC is the increase in junction temperature above the case temperature, it may be determined by: TJC = PpkRJC [D + (1 D)r(t1 + tp) + r(tp) r(t1)] where r(t) = normalized value of transient thermal resistance at time, t, from Figure 6, i.e.: r (t1 + tp) = normalized value of transient thermal resistance at time t1 + tp. -# To determine maximum junction temperature of the diode in a given situation, the following procedure is recommended: The temperature of the case should be measured using a thermocouple placed on the case at the temperature reference point (see the outline drawing on page 1). The thermal mass connected to the case is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of T C , the junction temperature may be determined by: TJ = TC + TJC -# " "+ "+ IGG " " (+0+ .++'- &) "+ " +-"( ( +/+, -( (+0+ .++'- Figure 8. Forward Recovery Time Figure 9. Reverse Recovery Time http://onsemi.com 466 MR2502, MR2504, MR2510 -# ""'2-(+ .++'- "').- 0/(+& ; +*.'2 @!O Figure 10. Rectification Waveform Efficiency RECTIFICATION EFFICIENCY NOTE +, +% /( Figure 11. Single-Phase Half-Wave Rectifier Circuit The rectification efficiency factor shown in Figure 10 was calculated using the formula: P (dc) P (rms) V2o(dc) RL V2o(rms) .100% RL For a square wave input of amplitude Vm, the efficiency factor becomes: V 2m 2R L (square) V 2m .100% 50% RL (1) V 2o (dc) .100% 2 ( ac) V o V 2o (dc) (A full wave circuit has twice these efficiencies) As the frequency of the input signal is increased, the reverse recovery time of the diode (Figure 9) becomes significant, resulting in an increasing ac voltage component across RL which is opposite in polarity to the forward current, thereby reducing the value of the efficiency factor , as shown on Figure 10. It should be emphasized that Figure 10 shows waveform efficiency only; it does not provide a measure of diode losses. Data was obtained by measuring the ac component of VO with a true rms ac voltmeter and the dc component with a dc voltmeter. The data was used in Equation 1 to obtain points for Figure 10. For a sine wave input Vm sin (t) to the diode, assume lossless, the maximum theoretical efficiency factor becomes: V2m 2R L (sine) V2m .100% 4 .100% 40.6% 2 4R L (3) (2) http://onsemi.com 467 MR2502, MR2504, MR2510 ASSEMBLY AND SOLDERING INFORMATION Exceeding these recommended maximums can result in electrical degradation of the device. There are two basic areas of consideration for successful implementation of button rectifiers: 1. Mounting and Handling 2. Soldering each should be carefully examined before attempting a finished assembly or mounting operation. SOLDERING The button rectifier is basically a semiconductor chip bonded between two nickel-plated copper heat sinks with an encapsulating material of thermal-setting silicone. The exposed metal areas are also tin plated to enhance solderability. In the soldering process it is important that the temperature not exceed 250C if device damage is to be avoided. Various solder alloys can be used for this operation but two types are recommended for best results: 1. 95% Sn, 5% Sb; melting point 237C 2. 96.5% tin, 3.5% silver; melting point 221C 3. 63% tin, 37% lead; melting point 183C Solder is available as preforms or paste. The paste contains both the metal and flux and can be dispensed rapidly. The solder preform requires the application of a flux to assure good wetting of the solder. The type of flux used depends upon the degree of cleaning to be accomplished and is a function of the metals involved. These fluxes range from a mild rosin to a strong acid; e.g., Nickel plating oxides are best removed by an acid base flux while an activated rosin flux may be sufficient for tin plated parts. Since the button is relatively light-weight, there is a tendency for it to float when the solder becomes liquid. To prevent bad joints and misalignment it is suggested that a weighting or spring loaded fixture be employed. It is also important that severe thermal shock (either heating or cooling) be avoided as it may lead to damage of the die or encapsulant of the part. Button holding fixtures for use during soldering may be of various materials. Stainless steel has a longer use life while black anodized aluminum is less expensive and will limit heat reflection and enhance absorption. The assembly volume will influence the choice of materials. Fixture dimension tolerances for locating the button must allow for expansion during soldering as well as allowing for button clearance. MOUNTING AND HANDLING The button rectifier lends itself to a multitude of assembly arrangements but one key consideration must always be included: One Side of the Connections to the Button Must Be Flexible! This stress relief to the button should also be chosen for maximum contact area to afford the best heat transfer -- but not at the expense of flexibility. For an annealed copper terminal a thickness of 0.015 is suggested. ,IG6>C +:A>:; -:GB>C6A ;DG JIIDC +:8I>;>:G DEE:G -:GB>C6A JIIDC 6H: !:6I ,>C@ &6I:G>6A The base heat sink may be of various materials whose shape and size are a function of the individual application and the heat transfer requirements. Common Materials Advantages and Disadvantages Steel Copper Aluminum Low Cost; relatively low heat conductivity High Cost; high heat conductivity Medium Cost; medium heat conductivity Relatively expensive to plate and not all platers can process aluminum. Handling of the button during assembly must be relatively gentle to minimize sharp impact shocks and avoid nicking of the plastic. Improperly designed automatic handling equipment is the worst source of unnecessary shocks. Techniques for vacuum handling and spring loading should be investigated. The mechanical stress limits for the button diode are as follows: Compression 32 lbs. 142.3 Newton Tension 32 lbs. 142.3 Newton Torsion 6-inch lbs. 0.68 Newton-meters Shear 55 lbs. 244.7 Newton HEATING TECHNIQUES The following four heating methods have their advantages and disadvantages depending on volume of buttons to be soldered. 1. Belt Furnaces readily handle large or small volumes and are adaptable to establishment of "on-line'' assembly since a variable belt speed sets the run rate. Individual furnace zone controls make excellent temperature control possible. 2. Flame Soldering involves the directing of natural gas flame jets at the base of a heatsink as the heatsink is indexed to various loading-heating-cooling-unloading positions. This is the most economical labor method of soldering large volumes. Flame soldering offers good temperature control but requires sophisticated temperature monitoring systems such as infrared. MECHANICAL STRESS (&)+,,"(' -(+,"(' -',"(' ,!+ http://onsemi.com 468 MR2502, MR2504, MR2510 ASSEMBLY AND SOLDERING INFORMATION (continued) 1. Peeling or plating separation is generally seen when a button is broken away for solder inspection. If heatsink or terminal base metal is present the plating is poor and must be corrected. 2. Thin plating allows the solder to penetrate through to the base metal and can give a poor connection. A suggested minimum plating thickness is 300 microinches. 3. Contaminated soldering surfaces may out-gas and cause non-wetting resulting in voids in the solder connection. The exact cause is not always readily apparent and can be because of: (a) improper plating (b) mishandling of parts (c) improper and/or excessive storage time 3. Ovens are good for batch soldering and are production limited. There are handling problems because of slow cooling. Response time is load dependent, being a function of the watt rating of the oven and the mass of parts. Large ovens may not give an acceptable temperature gradient. Capital cost is low compared to belt furnaces and flame soldering. 4. Hot Plates are good for soldering small quantities of prototype devices. Temperature control is fair with overshoot common because of the exposed heating surface. Solder flow and positioning can be corrected during soldering since the assembly is exposed. Investment cost is very low. Regardless of the heating method used, a soldering profile giving the time-temperature relationship of the particular method must be determined to assure proper soldering. Profiling must be performed on a scheduled basis to minimize poor soldering. The time-temperature relationship will change depending on the heating method used. SOLDER PROCESS MONITORING Continuous monitoring of the soldering process must be established to minimize potential problems. All parts used in the soldering operation should be sampled on a lot by lot basis by assembly of a controlled sample. Evaluate the control sample by break-apart tests to view the solder connections, by physical strength tests and by dimensional characteristics for part mating. A shear test is a suggested way of testing the solder bond strength. SOLDER PROCESS EVALUATION Characteristics to look for when setting up the soldering process: I Overtemperature is indicated by any one or all three of the following observations. 1. Remelting of the solder inside the button rectifier shows the temperature has exceeded 285C and is noted by "islands'' of shiny solder and solder dewetting when a unit is broken apart. 2. Cracked die inside the button may be observed by a moving reverse oscilloscope trace when pressure is applied to the unit. 3. Cracked plastic may be caused by thermal shock as well as overtemperature so cooling rate should also be checked. II Cold soldering gives a grainy appearance and solder build-up without a smooth continuous solder fillet. The temperature must be adjusted until the proper solder fillet is obtained within the maximum temperature limits. III Incomplete solder fillets result from insufficient solder or parts not making proper contact. IVTilted buttons can cause a void in the solder between the heatsink and button rectifier which will result in poor heat transfer during operation. An eight degree tilt is a suggested maximum value. V Plating problems require a knowledge of plating operations for complete understanding of observed deficiencies. POST SOLDERING OPERATION CONSIDERATIONS After soldering, the completed assembly must be unloaded, washed and inspected. Unloading must be done carefully to avoid unnecessary stress. Assembly fixtures should be cooled to room temperature so solder profiles are not affected. Washing is mandatory if an acid flux is used because of its ionic and corrosive nature. Wash the assemblies in agitated hot water and detergent for three to five minutes. After washing; rinse, blow off excessive water and bake 30 minutes at 150C to remove trapped moisture. Inspection should be both electrical and physical. Any rejects can be reworked as required. SUMMARY The Button Rectifier is an excellent building block for specialized applications. The prime example of its use is the output bridge of the automative alternator where millions are used each year. Although the material presented here is not all inclusive, primary considerations for use are presented. For further information, contact the nearest ON Semiconductor Sales Office or franchised distributor. http://onsemi.com 469 (',6/633(05 ,.,&10 (&5,),(34 250 Volts, 25 Amperes Compact, highly efficient silicon rectifiers for medium-current applications requiring: * High Current Surge -- 400 Amperes @ TJ = 175C * Peak Performance @ Elevated Temperature -- 25 Amperes * Low Cost * Compact, Molded Package for Optimum Efficiency in a Small Case Configuration http://onsemi.com MICRODE BUTTON CASE 193 Mechanical Characteristics * Finish: All External Surfaces are Corrosion Resistant, and Contact * * * * Areas are Readily Solderable Polarity: Indicated by Cathode Band Weight: 1.8 Grams (Approximately) Maximum Temperature for Soldering Purposes: 260C Marking: 2525 or MR3025 MARKING DIAGRAM 2525 LYYWW 2525 L YY WW MAXIMUM RATINGS Rating DC Blocking Voltage Non-Repetitive Peak Reverse Voltage (Halfwave, Single Phase, 60 Hz) Average Forward Current (Single Phase, Resistive Load, TC = 150C) Non-Repetitive Peak Surge Current (Halfwave, Single Phase, 60 Hz) Symbol Value Unit VR 250 Volts VRSM 310 Volts IO 25 Amps = Device Code = Location Code = Year = Work Week MARKING DIAGRAM MR3025 YYWWL IFSM 400 Amps Operating Junction Temperature Range TJ -65 to +175 C Storage Temperature Range Tstg -65 to +175 C MR3025 = Device Code L = Location Code YY = Year WW = Work Week ORDERING INFORMATION Device Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 1 470 Package Shipping TRA2525 Microde Button 5000 Units/Box MR3025 Microde Button 5000 Units/Box Publication Order Number: TRA2525/D TRA2525 MR3025 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Value Unit RJC 1.0 C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit Instantaneous Forward Voltage (Note 1.) (IF = 100 Amps, TC = 25C) VF -- 1.18 Volts Reverse Current(1) (VR = 250 V, TC = 25C) (VR = 250 V, TC = 100C) IR -- -- 10 250 2* 2* Forward Voltage Temperature Coefficient @ IF = 10 mA VFTC 1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2%. *Typical http://onsemi.com 471 A mV/C IFSM, PEAK HALF WAVE CURRENT (A) TRA2525 MR3025 1400 1350 PW = 300 s TJ = 25C 1300 1200 1150 1100 TJ = 25C 1 Cycle TJ = 175C 100 1 1050 10 100 NUMBER OF CYCLES Maximum 1000 Figure 2. Non-Repetitive Surge Current 950 0 900 Typical 850 COEFFICIENT (mV/ C) V F, INSTANTANEOUS FORWARD VOLTAGE (mV) 1250 VRRM may be applied between each cycle of surge. The TJ noted is TJ prior to surge F = 60 Hz 1000 800 750 700 -0.5 Typical Range -1.0 -1.5 650 -2.0 600 1 10 100 200 0.1 IF, INSTANTANEOUS FORWARD CURRENT (A) DC 40 IFM/IFAV = 20 10 0 140 150 160 170 180 PF(AV), AVERAGE POWER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) 50 130 100 200 Figure 3. VF Temperature Coefficient 60 120 10 IF, INSTANTANEOUS FORWARD CURRENT (A) Figure 1. Forward Voltage 30 1 50 IFM/IFAV = 40 DC 30 20 10 0 0 TC, CASE TEMPERATURE (C) 10 20 30 40 IF, AVERAGE FORWARD CURRENT (A) Figure 4. Current Derating Figure 5. Forward Power Dissipation http://onsemi.com 472 50 r(t), TRANSIENT THERMAL RESISTANCE TRA2525 MR3025 100 RJC(t) = RJC * r(t) Note 1 10-1 10-2 1 0.1 10 100 300 10 100 t, TIME (ms) Figure 6. Thermal Response NOTE 1 Ppk Ppk DUTY CYCLE, D = tp/t1 PEAK POWER, Ppk is peak of an equivalent square power pulse tp 1000 C, CAPACITANCE (pF) t1 To determine maximum junction temperature of the diode in a given situation, the following procedure is recommended. The temperature of the case should be measured using a thermocouple placed on the case at the temperature reference point (see the outline drawing on page 1). The thermal mass connected to the case is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulse operation once steady state conditions are achieved. TJ = 25C 100 Using the measured value of TC, the junction temperature may be determined by: TJ = TC + TJC 10 Where TJC is the increase in junction temperature above the case temperature, it may be determined by: 0.1 1 VR, REVERSE VOLTAGE (V) TJC = Ppk RJC [D + (1 - D) r(t1 + tp) + r(tp) - r(t1)] where: r(t) = normalized value of transient thermal resistance at time, t, from Figure 6, i.e.: Figure 7. Typical Capacitance 1 TRR , REVERSE RECOVERY TIME (s) TFR , FORWARD RECOVERY TIME (s) r(t1 + tp) = normalized value of transient thermal resistance at time t1 + tp. TJ = 25C VF TFR VFR VFR = 1.0 V VFR = 2.0 V 0.1 1 100 IF 0.25 IR IR TRR IF = 1 A 10 IF = 10 A 1 0.1 10 TJ = 25C 0 IF, FORWARD CURRENT (A) 1 IR/IF, RATIO OF REVERSE TO FORWARD CURRENT Figure 8. Forward Recovery Time Figure 9. Reverse Recovery Time http://onsemi.com 473 10 , EFFICIENCY FACTOR (%) TRA2525 MR3025 square wave input 50 sine wave input TJ = 25C 10 5 10 1 100 f, FREQUENCY (kHz) Figure 10. Rectification Waveform Efficiency RECTIFICATION EFFICIENCY NOTE RS RL VO Figure 11. Single Phase Half-Wave Rectifier Circuit The rectification efficiency factor shown in Figure 10 was calculated using the formula: P (dc) P (rms) V2o(dc) RL V2o(rms) .100% RL For a square wave input of amplitude Vm, the efficiency factor becomes: V 2m 2R L (square) V 2m .100% 50% RL (1) V 2o (dc) .100% 2 ( ac) V o V 2o (dc) (a full wave circuit has twice these efficiencies) As the frequency of the input signal is increased, the reverse recovery time of the diode (Figure 9) becomes significant, resulting in an increase ac voltage component across RL which is opposite in polarity to the forward current, thereby reducing the value of the efficiency factor , as shown on Figure 10. It should be emphasized that Figure 10 shows waveform efficiency only; it does not provide a measure of diode losses. Data was obtained by measuring the ac component of VO with a true rms ac voltmeter and the dc component with a dc voltmeter. The data was used in Equation 1 to obtain points for Figure 10. For a sine wave input Vm sin(wt) to the diode, assume lossless, the maximum theoretical efficiency factor becomes: V2m 2R L (sine) V2m .100% 4 .100% 40.6% 2 4R L (3) (2) http://onsemi.com 474 TRA2525 MR3025 MECHANICAL STRESS Assembly and Soldering Information There are two basic areas of consideration for successful implementation of button rectifiers: 1. Mounting and Handling 2. Soldering Each should be carefully examined before attempting a finished assembly or mounting operation. COMPRESSION TORSION Mounting and Handling The button rectifier lends itself to a multitude of assembly arrangements, but one key consideration must always be included: One Side of the Connections to the Button Must be Flexible! This stress relief to the button should also be chosen for maximum contact area to afford the best heat transfer -- but not at the expense of flexibility. For an annealed copper terminal a thickness of 0.015 is suggested. TENSION SHEAR Exceeding these recommended maximums can result in electrical degradation of the device. Strain Relief Terminal for Button Rectifier Soldering Copper Terminal The button rectifier is basically a semiconductor chip bonded between two nickel-plated copper heat sinks with an encapsulating material of epoxy compound. The exposed metal areas are also tin plated to enhance solderability. In the soldering process it is important that the temperature not exceed 260C if device damage is to be avoided. Various solder alloys can be used for this operation but two types are recommended for best results: 1. 95% Sn, 5% Sb; melting point 237C 2. 96.5% tin, 3.5% silver; melting point 221C 3. 63% tin, 37% lead; melting point 183C Solder is available as preforms or paste. The paste contains both the metal and flux and can be dispensed rapidly. The solder preform requires the application of a flux to assure good wetting of the solder. The type of flux used depends upon the degree of cleaning to be accomplished and is a function of the metal involved. These fluxes range from a mild rosin to a strong acid; e.g., Nickel plating oxides are best removed by an acid base flux while an activated rosin flux may be sufficient for tin plated parts. Since the button is relatively lightweight, there is a tendency for it to float when the solder becomes liquid. To prevent bad joints and misalignment, it is suggested that a weighting or spring loaded fixture be employed. It is also important that severe thermal shock (either heating or cooling) be avoided as it may lead to damage of the die or encapsulant of the part. Button Base (Heat Sink Material) The base heat sink may be of various materials whose shape and size are a function of the individual application and the heat transfer requirements. Common Materials Steel Copper Aluminum Advantages and Disadvantages Low Cost: relatively low heat conductivity High Cost: high heat conductivity Medium Cost: medium heat conductivity. Relatively expensive to plate and not all platers can process aluminum. Handling of the button during assembly must be relatively gentle to minimize sharp impact shocks and avoid nicking of the plastic. Improperly designed automatic handling equipment is the worst source of unnecessary shocks. Techniques for vacuum handling and spring loading should be investigated. The mechanical stress limits for the button diode are as follows: Compression Tension Torsion Shear 32 lbs. 32 lbs. 6-inch lbs. 55 lbs. 142.3 Newton 142.3 Newton 0.68 Newtons-meters 244.7 Newton http://onsemi.com 475 TRA2525 MR3025 control but requires sophisticated temperature monitoring systems such as infrared. 3. Ovens are good for batch soldering and are production limited. There are handling problems because of slow cooling. Response time is load dependent, being a function of the watt rating of the oven and the mass of parts. Large ovens may not give an acceptable temperature gradient. Capital cost is low compared to belt furnaces and flame soldering. 4. Hot Plates are good for soldering small quantities of prototype devices. Temperature control is fair with overshoot common because of the exposed heating surface. Solder flow and positioning can be corrected during soldering since the assembly is exposed. Investment cost is very low. Button holding fixtures for use during soldering may be of various materials. Stainless steel has a longer use life while black anodized aluminum is less expensive and will limit heat reflection and enhance absorption. The assembly volume will influence the choice of materials. Fixture dimension tolerances for locating the button must allow for expansion during soldering as well as allowing for button clearance. Heating Techniques The following four heating methods have their advantages and disadvantages depending on volume of buttons to be soldered. 1. Belt furnaces readily handle large or small volumes and are adaptable to establishment of "on-line'' assembly since a variable belt speed sets the run rate. Individual furnace zone controls make excellent temperature control possible. 2. Flame Soldering involves the directing of natural gas flame jets at the base of a heatsink as the heatsink is indexed to various loading-heating- cooling-unloading positions. This is the most economical labor method of soldering large volumes. Flame soldering offers good temperature Regardless of the heating method used, a soldering profile giving the time-temperature relationship of the particular method must be determined to assure proper soldering. Profiling must be performed on a scheduled basis to minimize poor soldering. The time-temperature relationship will change depending on the heating method used. http://onsemi.com 476 (',6/633(05 ,.,&10 (&5,),(3 250 Volts, 32 Amperes Compact, highly efficient silicon rectifiers for medium-current applications requiring: * High Current Surge - 500 Amperes @ TJ = 175C * Peak Performance @ Elevated Temperature - 32 Amperes * Low Cost * Compact, Molded Package for Optimum Efficiency in a Small Case Configuration http://onsemi.com MICRODE BUTTON CASE 193 Mechanical Characteristics * Finish: All External Surfaces are Corrosion Resistant, and Contact * * * * Areas are Readily Solderable Polarity: Indicated by Cathode Band Weight: 1.8 Grams (Approximately) Maximum Temperature for Soldering Purposes: 260C Marking: 3225 MARKING DIAGRAM 3225 LYYWW 3225 L YY WW MAXIMUM RATINGS Rating DC Blocking Voltage Non-Repetitive Peak Reverse Voltage (Halfwave, Single Phase, 60 Hz) Average Forward Current (Single Phase, Resistive Load, TC = 150C) Non-Repetitive Peak Surge Current (Halfwave, Single Phase, 60 Hz) Symbol Value Unit VR 250 Volts VRSM 310 Volts ORDERING INFORMATION IO 32 Amps 500 Amps Operating Junction Temperature Range TJ -65 to +175 C Storage Temperature Range Tstg -65 to +175 C October, 2000 - Rev. 1 Device TRA3225 IFSM Semiconductor Components Industries, LLC, 2000 = Device Code = Location Code = Year = Work Week 477 Package Shipping Microde Button 5000 Units/Box Publication Order Number: TRA3225/D TRA3225 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Value Unit RJC 0.8 C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit Instantaneous Forward Voltage (Note 1.) (IF = 100 Amps, TC = 25C) VF - 1.15 Volts Reverse Current (Note 1.) (VR = 250 V, TC = 25C) (VR = 250 V, TC = 100C) IR - - 20 250 2* 2* Forward Voltage Temperature Coefficient (IF = 10 mA) VFTC 1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2%. *Typical http://onsemi.com 478 A mV/C TRA3225 IFSM, PEAK HALF WAVE CURRENT (A) 1400 VRRM may be applied between each cycle of surge. The TJ noted is TJ prior to surge F = 60 Hz 1000 PW = 300 s TJ = 25C 1200 Maximum 1100 Typical TJ = 175C 1 Cycle 100 1 100 Figure 2. Non-Repetitive Surge Current 0 900 800 700 -0.5 Typical Range -1.0 -1.5 -2.0 600 1 100 10 0.1 1000 IF, INSTANTANEOUS FORWARD CURRENT (A) 60 DC 50 IFM/IFAV = 30 20 10 0 130 140 150 160 170 180 P F(AV), AVERAGE POWER DISSIPATION (W) 70 120 10 100 200 Figure 3. VF Temperature Coefficient 80 40 1 IF, INSTANTANEOUS FORWARD CURRENT (A) Figure 1. Forward Voltage IF(AV), AVERAGE FORWARD CURRENT (A) 10 NUMBER OF CYCLES 1000 COEFFICIENT (mV/ C) V F, INSTANTANEOUS FORWARD VOLTAGE (mV) 1300 TJ = 25C 50 IFM/IFAV = 40 DC 30 20 10 0 0 TC, CASE TEMPERATURE (C) 10 20 30 40 IF, AVERAGE FORWARD CURRENT (A) Figure 4. Current Derating Figure 5. Forward Power Dissipation http://onsemi.com 479 50 r(t), TRANSIENT THERMAL RESISTANCE TRA3225 100 RJC(t) = RJC * r(t) Note 1 10-1 10-2 1 0.1 10 1000 100 t, TIME (ms) Figure 6. Thermal Response NOTE 1 Ppk Ppk DUTY CYCLE, D = tp/t1 PEAK POWER, Ppk is peak of an equivalent square power pulse tp 1000 C, CAPACITANCE (pF) t1 To determine maximum junction temperature of the diode in a given situation, the following procedure is recommended. The temperature of the case should be measured using a thermocouple placed on the case at the temperature reference point (see the outline drawing on page 1). The thermal mass connected to the case is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulse operation once steady state conditions are achieved. TJ = 25C 100 Using the measured value of TC, the junction temperature may be determined by: TJ = TC + TJC Where TJC is the increase in junction temperature above the case temperature, it may be determined by: 10 0.1 TJC = Ppk RJC [D + (1 - D) r(t1 + tp) + r(tp) - r(t1)] where: r(t) = normalized value of transient thermal resistance at time, t, from Figure 6, i.e.: 1 10 100 VR, REVERSE VOLTAGE (V) Figure 7. Typical Capacitance 1 TRR , REVERSE RECOVERY TIME (s) TFR , FORWARD RECOVERY TIME (s) r(t1 + tp) = normalized value of transient thermal resistance at time t1 + tp. TJ = 25C VF TFR VFR VFR = 1.0 V VFR = 2.0 V 0.1 1 100 IF 0.25 IR IR TRR IF = 1 A 10 IF = 10 A 1 0.1 10 TJ = 25C 0 IF, FORWARD CURRENT (A) 1 IR/IF, RATIO OF REVERSE TO FORWARD CURRENT Figure 8. Forward Recovery Time Figure 9. Reverse Recovery Time http://onsemi.com 480 10 , EFFICIENCY FACTOR (%) TRA3225 square wave input 50 sine wave input TJ = 25C 10 5 10 1 100 f, FREQUENCY (kHz) Figure 10. Rectification Waveform Efficiency RECTIFICATION EFFICIENCY NOTE RS RL VO Figure 11. Single Phase Half-Wave Rectifier Circuit The rectification efficiency factor shown in Figure 10 was calculated using the formula: P (dc) P (rms) V2o(dc) RL V2o(rms) .100% RL As the frequency of the input signal is increased, the reverse recovery time of the diode (Figure 9) becomes significant, resulting in an increase ac voltage component across RL which is opposite in polarity to the forward current, thereby reducing the value of the efficiency factor , as shown on Figure 10. It should be emphasized that Figure 10 shows waveform efficiency only; it does not provide a measure of diode losses. Data was obtained by measuring the ac component of VO with a true rms ac voltmeter and the dc component with a dc voltmeter. The data was used in Equation 1 to obtain points for Figure 10. (1) V 2o (dc) .100% V 2o (ac) V 2o (dc) For a sine wave input Vm sin(wt) to the diode, assume lossless, the maximum theoretical efficiency factor becomes: V2m 2R L (sine) V2m .100% 4 .100% 40.6% 2 4R L (2) For a square wave input of amplitude Vm, the efficiency factor becomes: V 2m 2R L (square) V 2m .100% 50% RL (3) (a full wave circuit has twice these efficiencies) http://onsemi.com 481 TRA3225 MECHANICAL STRESS Assembly and Soldering Information There are two basic areas of consideration for successful implementation of button rectifiers: 1. Mounting and Handling 2. Soldering Each should be carefully examined before attempting a finished assembly or mounting operation. COMPRESSION TORSION Mounting and Handling The button rectifier lends itself to a multitude of assembly arrangements, but one key consideration must always be included: One Side of the Connections to the Button Must be Flexible! This stress relief to the button should also be chosen for maximum contact area to afford the best heat transfer - but not at the expense of flexibility. For an annealed copper terminal a thickness of 0.015 is suggested. TENSION SHEAR Exceeding these recommended maximums can result in electrical degradation of the device. Strain Relief Terminal for Button Rectifier Soldering Copper Terminal The button rectifier is basically a semiconductor chip bonded between two nickel-plated copper heat sinks with an encapsulating material of epoxy compound. The exposed metal areas are also tin plated to enhance solderability. In the soldering process it is important that the temperature not exceed 260C if device damage is to be avoided. Various solder alloys can be used for this operation but two types are recommended for best results: 1. 95% Sn, 5% Sb; melting point 237C 2. 96.5% tin, 3.5% silver; melting point 221C 3. 63% tin, 37% lead; melting point 183C Solder is available as preforms or paste. The paste contains both the metal and flux and can be dispensed rapidly. The solder preform requires the application of a flux to assure good wetting of the solder. The type of flux used depends upon the degree of cleaning to be accomplished and is a function of the metal involved. These fluxes range from a mild rosin to a strong acid; e.g., Nickel plating oxides are best removed by an acid base flux while an activated rosin flux may be sufficient for tin plated parts. Since the button is relatively lightweight, there is a tendency for it to float when the solder becomes liquid. To prevent bad joints and misalignment, it is suggested that a weighting or spring loaded fixture be employed. It is also important that severe thermal shock (either heating or cooling) be avoided as it may lead to damage of the die or encapsulant of the part. Button Base (Heat Sink Material) The base heat sink may be of various materials whose shape and size are a function of the individual application and the heat transfer requirements. Common Materials Steel Copper Aluminum Advantages and Disadvantages Low Cost: relatively low heat conductivity High Cost: high heat conductivity Medium Cost: medium heat conductivity. Relatively expensive to plate and not all platers can process aluminum. Handling of the button during assembly must be relatively gentle to minimize sharp impact shocks and avoid nicking of the plastic. Improperly designed automatic handling equipment is the worst source of unnecessary shocks. Techniques for vacuum handling and spring loading should be investigated. The mechanical stress limits for the button diode are as follows: Compression Tension Torsion Shear 32 lbs. 32 lbs. 6-inch lbs. 55 lbs. 142.3 Newton 142.3 Newton 0.68 Newtons-meters 244.7 Newton http://onsemi.com 482 TRA3225 control but requires sophisticated temperature monitoring systems such as infrared. 3. Ovens are good for batch soldering and are production limited. There are handling problems because of slow cooling. Response time is load dependent, being a function of the watt rating of the oven and the mass of parts. Large ovens may not give an acceptable temperature gradient. Capital cost is low compared to belt furnaces and flame soldering. 4. Hot Plates are good for soldering small quantities of prototype devices. Temperature control is fair with overshoot common because of the exposed heating surface. Solder flow and positioning can be corrected during soldering since the assembly is exposed. Investment cost is very low. Button holding fixtures for use during soldering may be of various materials. Stainless steel has a longer use life while black anodized aluminum is less expensive and will limit heat reflection and enhance absorption. The assembly volume will influence the choice of materials. Fixture dimension tolerances for locating the button must allow for expansion during soldering as well as allowing for button clearance. Heating Techniques The following four heating methods have their advantages and disadvantages depending on volume of buttons to be soldered. 1. Belt furnaces readily handle large or small volumes and are adaptable to establishment of "on-line'' assembly since a variable belt speed sets the run rate. Individual furnace zone controls make excellent temperature control possible. 2. Flame Soldering involves the directing of natural gas flame jets at the base of a heatsink as the heatsink is indexed to various loading-heating- cooling-unloading positions. This is the most economical labor method of soldering large volumes. Flame soldering offers good temperature Regardless of the heating method used, a soldering profile giving the time-temperature relationship of the particular method must be determined to assure proper soldering. Profiling must be performed on a scheduled basis to minimize poor soldering. The time-temperature relationship will change depending on the heating method used. http://onsemi.com 483 MR754 and MR760 are Preferred Devices ,*+ 633(05 ($' 1605(' (&5,),(34 * Current Capacity Comparable to Chassis Mounted Rectifiers * Very High Surge Capacity * Insulated Case http://onsemi.com Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 2.5 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Lead HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50 - 1000 VOLTS DIFFUSED JUNCTION is Readily Solderable * Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds * Polarity: Cathode Polarity Band * Shipped 1000 units per plastic bag. Available Tape and Reeled, MARKING DIAGRAM 800 units per reel by adding a "RL'' suffix to the part number MAXIMUM RATINGS MR7xx LYYWW Please See the Table on the Following Page AXIAL LEAD BUTTON CASE 194 STYLE 1 MR7xx = Device Code xx = 50, 51, 52, 54, = 56 or 60 L = Location Code YY = Year WW = Work Week ORDERING INFORMATION Device Package Shipping MR750 Axial Lead 1000 Units/Bag MR750RL Axial Lead 800/Tape & Reel MR751 Axial Lead 1000 Units/Bag MR751RL Axial Lead 800/Tape & Reel MR752 Axial Lead 1000 Units/Bag MR752RL Axial Lead 800/Tape & Reel MR754 Axial Lead 1000 Units/Bag MR754RL Axial Lead 800/Tape & Reel MR756 Axial Lead 1000 Units/Bag MR756RL Axial Lead 800/Tape & Reel MR760 Axial Lead 1000 Units/Bag MR760RL Axial Lead 800/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 4 484 Publication Order Number: MR750/D MR750 SERIES MAXIMUM RATINGS Symbol MR750 MR751 MR752 MR754 MR756 MR760 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Characteristic VRRM VRWM VR 50 100 200 400 600 1000 Volts Non-Repetitive Peak Reverse Voltage (Halfwave, single phase, 60 Hz peak) VRSM 60 120 240 480 720 1200 Volts VR(RMS) 35 70 140 280 420 700 Volts RMS Reverse Voltage Average Rectified Forward Current (Single phase, resistive load, 60 Hz) See Figures 5 and 6 IO Non-Repetitive Peak Surge Current (Surge applied at rated load conditions) Operating and Storage Junction Temperature Range 22 (TL = 60C, 1/8 Lead Lengths) 6.0 (TA = 60C, P.C. Board mounting) IFSM Amps 400 (for 1 cycle) TJ, Tstg Amps C 65 to +175 ELECTRICAL CHARACTERISTICS Characteristic and Conditions Symbol Max Unit Maximum Instantaneous Forward Voltage Drop (iF = 100 Amps, TJ = 25C) vF 1.25 Volts Maximum Forward Voltage Drop (IF = 6.0 Amps, TA = 25C, 3/8 leads) VF 0.90 Volts Maximum Reverse Current (Rated dc Voltage) IR 25 1.0 A mA TJ = 25C TJ = 100C http://onsemi.com 485 MR750 SERIES ",& )$!%0/.++'-&) -# &1"&.& /++& &2 ))%" -0' ! 2% ( ,.+ -! -# '(- ", -# )+"(+ -( ,.+ -# '.&+ ( 2%, - !O Figure 2. Maximum Surge Capability (""'-B/ >"',-'-'(.,(+0+.++'-&) -2)"% -2)"% +' > "',-'-'(., (+0+ .++'- &) K "',-'-'(., (+0+ /(%- /(%-, Figure 3. Forward Voltage Temperature Coefficient Figure 1. Forward Voltage + #%I #.'-"(' -( %-+',"' -!+&%+,",-' 0 % % !- ,"'$ DI= A:69H ID =:6I H>C@ L>I= A:C<I=H 6H H=DLC /6G>6I>DCH >C +#%I 7:ADL H:8DC9H 6G: >C9:E:C9:CI D; A:69 8DCC:8I>DCH D; >C8= DG <G:6I:G 6C9 K6GN DCAN 67DJI ;GDB I=: K6AJ:H H=DLC /6AU J:H ;DG I>B:H <G:6I:G I=6C H:8DC9H B6N 7: D7I6>C:9 7N 9G6L>C< 6 8JGK: L>I= I=: :C9 ED>CI 6I H:8DC9H I6@:C ;GDB ><JG: DG 86A8JA6I:9 ;GDB I=: CDI:H JH>C< I=: <>K:C 8JGK:H 6H 6 <J>9: >I=:G INE>86A DG B6M>BJB K6AJ:H B6N 7: JH:9 DG +#%I K6AJ:H 6I EJAH: L>9I=H A:HH I=6C H:8DC9 I=: 67DK: 8JGK: 86C 7: :MIG6EDA6I:9 9DLC ID H 6I 6 8DCI>CJ>C< HADE: I -"& ,(', Figure 4. Typical Transient Thermal Resistance http://onsemi.com 486 +,",-"/ "'.-"/ %(, % (-! %, -( !,"'$ 0"-! %' -!, , ,!(0' "/ /+ (+0+.++'-&), "/ /+ (+0+.++'-&), MR750 SERIES +# 0 , '(- +,",-"/ "'.-"/ %(, )"-' %(, "E@ "6K< "E@ "6K< "E@ "6K< +# 0 ; !O , '(- ")$ "/ -% % -&)+-.+ - &"'- -&)+-.+ Figure 5. Maximum Current Ratings Figure 6. Maximum Current Ratings NOTES THERMAL CIRCUIT MODEL )/ )(0+",,")-"('0--, )"-' %(, "E@ "6K< "6K< "6K< (For Heat Conduction Through The Leads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igure 7. Power Dissipation + #% -!+&%+,",-' #.'-"(' -( % 0 ,"' % % -( !- ,"'$ "'," '""'- !- %(0 -!+(. ! (-!+ % (-! %, -( !,"'$ *.% %' -! % % %' -! "'!, EE EE EE EE EE EE EE EE Board Ground Plane Recommended mounting for half wave circuit Figure 8. Steady State Thermal Resistance http://onsemi.com 487 MR750 SERIES I GG +/+,+(/+2-"&H +%-"/""'2 -# -# .++'- "').- 0/(+& -# " " IGG +)-"-"(' +*.'2 @!O I ;G (+0++(/+2-"&H )"-'E -# ; I;G ;G / ;G / /( V 2m 2R L (square) V 2m .100% 50% RL (1) V 2o (dc) .100% V 2o (ac) V 2o (dc) For a sine wave input Vm sin (wt) to the diode, assumed lossless, the maximum theoretical efficiency factor becomes: V2m 2R L (sine) V2m .100% 4 .100% 40.6% 2 4R L (3) (A full wave circuit has twice these efficiencies) As the frequency of the input signal is increased, the reverse recovery time of the diode (Figure 10) becomes significant, resulting in an increasing ac voltage component across RL which is opposite in polarity to the forward current, thereby reducing the value of the efficiency factor , as shown on Figure 9. It should be emphasized that Figure 9 shows waveform efficiency only; it does not provide a measure of diode losses. Data was obtained by measuring the ac component of Vo with a true rms ac voltmeter and the dc component with a dc voltmeter. The data was used in Equation 1 to obtain points for Figure 9. The rectification efficiency factor shown in Figure 9 was calculated using the formula: RL Figure 12. Forward Recovery Time Figure 13. Single-Phase Half-Wave Rectifier Circuit P (rms) For a square wave input of amplitude Vm, the efficiency factor becomes: +% " (+0+ ).%, .++'- &) +, V2o(rms) .100% ;G Figure 11. Junction Capacitance P (dc) -# /+ +/+, /(%- /(%-, V2o(dc) RL Figure 10. Reverse Recovery Time "+ " +-"( ( +/+, -( (+0+ .++'- Figure 9. Rectification Efficiency "+ (2) http://onsemi.com 488 7(371.5$*( 3$04,(05 6223(4413 24 V-32 V Designed for applications requiring a diode with reverse avalanche characteristics for use as reverse power transient suppressor. Developed to suppress transients in automotive system, this device operates in the forward mode as standard rectifier or reverse mode as power zener diode and will protect expensive modules such as ignition, injection, antiblocking system . . . from overvoltage conditions. * High Power Capability * Economical http://onsemi.com MICRODE BUTTON CASE 193 Mechanical Characteristics * Finish: All External Surfaces are Corrosion Resistant, and Contact * * * * MARKING DIAGRAM Areas are Readily Solderable Polarity: Indicated by Cathode Band Weight: 1.8 Grams (Approximately) Maximum Temperature for Soldering Purposes: 260C Marking: 2532 2532 LYYWW 2532 L YY WW MAXIMUM RATINGS Rating Symbol Value Unit DC Blocking Voltage VR 23 Volts Average Forward Current (Single Phase, Resistive Load, TC = 150C) IO 32 Amps ORDERING INFORMATION Peak Repetitive Reverse Surge Current (Time Constant = 10 ms, TC = 25C) IRSM 80 Amps Non-Repetitive Peak Surge Current (Halfwave, Single Phase, 60 Hz) IFSM 500 Amps Operating Junction Temperature Range TJ -65 to +175 C Storage Temperature Range Tstg -65 to +150 C Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 1 = Device Code = Location Code = Year = Work Week Device TRA2532 489 Package Shipping Microde Button 5000 Units/Box Publication Order Number: TRA2532/D TRA2532 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Value Unit RJC 0.8 C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit Instantaneous Forward Voltage (Note 1.) (iF = 100 Amps, TC = 25C) vF - 1.18 Volts Reverse Current(1) (VR = 23 Vdc, TC = 25C) IR - 10 A Breakdown Voltage(1) (IZ = 100 mA, TC = 25C) V(BR) 24 32 Volts Breakdown Voltage (IZ = 80 Amps, TC = 25C, PW = 80 s) V(BR) - 40 Volts V(BR)TC 0.096* 0.096* %/C VFTC 2* 2* mV/C Breakdown Voltage Temperature Coefficient Forward Voltage Temperature Coefficient @ IF = 10 mA 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. *Typical http://onsemi.com 490 10 104 VR = 20 V C t , CAPACITANCE (nF) 103 102 101 100 1 25 V F , INSTANTANEOUS FORWARD VOLTAGE (mV) TJ = 25C 50 75 100 125 150 175 10 100 VR, REVERSE VOLTAGE (V) Figure 1. Normalized Reverse Current Figure 2. Typical Reverse Capacitance 1150 PW = 300 s TC = 25C 1050 1000 Maximum 950 Typical 900 850 800 750 1 10 80 60 40 20 0 100 0 IF, AVERAGE FORWARD CURRENT (A) 25 50 75 100 125 150 175 200 TC, CASE TEMPERATURE (C) Figure 3. Forward Voltage Figure 4. Maximum Current Rating 1000 1000 WRSM, PEAK REVERSE ENERGY (J) IRSM, PEAK REVERSE CURRENT (A) 1 TJ, JUNCTION TEMPERATURE (C) 1200 1100 0.1 IF, AVERAGE FORWARD CURRENT (A) IR, REVERSE CURRENT (NORMALIZED) TRA2532 TC = 25C 100 10 1 10 100 1000 TC = 25C 100 10 1 1 t, TIME CONSTANT (mS) 10 100 t, TIME CONSTANT (mS) Figure 5. Maximum Peak Reverse Current Figure 6. Maximum Reverse Energy http://onsemi.com 491 1000 TRA2532 PRSM, PEAK REVERSE POWER (W) PRSM, PEAK REVERSE POWER (W) 10000 TC = 25C 1000 100 10 100 Time Constant = 10 ms Time Constant = 100 ms 25 1000 50 100 75 125 t, TIME CONSTANT (mS) TC, CASE TEMPERATURE (C) Figure 7. Maximum Peak Reverse Power Figure 8. Reverse Power Derating 100 150 1.20 1.18 VZ (IRSM)/VZ (100 mA) r(t), TRANSIENT THERMAL RESISTANCE 1 2800 2600 2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 10-1 RJC(t) = RJC * r(t) PW = 80 s, TC = 25C 1.16 1.14 1.12 1.10 1.08 1.06 1.04 1.02 1.00 10-2 0.1 1 10 100 300 10 20 30 40 50 60 70 80 90 100 110 120 t, TIME (mS) IRSM, PEAK REVERSE CURRENT (A) Figure 9. Thermal Response Figure 10. Typical Clamping Factor http://onsemi.com 492 TRA2532 2 Ohms 0 - 150 V 50 mF dl/dt Limitation 100 H TRA2532 Figure 11. Load Dump Test Circuit 100 dl/dt < 1 A/s 80 (%) 60 40 20 0 0 0.1 t (50%) t (37%) 0.2 0.3 t (10%) 0.5 0.4 t (37%) = Time Constant t (50%) = 0.7 t (37%) t (10%) = 2.3 t (37%) t, TIME (s) Figure 12. Load Dump Pulse Current http://onsemi.com 493 TRA2532 MECHANICAL STRESS Assembly and Soldering Information There are two basic areas of consideration for successful implementation of button rectifiers: 1. Mounting and Handling 2. Soldering Each should be carefully examined before attempting a finished assembly or mounting operation. COMPRESSION TORSION Mounting and Handling The button rectifier lends itself to a multitude of assembly arrangements, but one key consideration must always be included: One Side of the Connections to the Button Must be Flexible! This stress relief to the button should also be chosen for maximum contact area to afford the best heat transfer - but not at the expense of flexibility. For an annealed copper terminal a thickness of 0.015 is suggested. TENSION SHEAR Exceeding these recommended maximums can result in electrical degradation of the device. Strain Relief Terminal for Button Rectifier Soldering The button rectifier is basically a semiconductor chip bonded between two nickel-plated copper heat sinks with an encapsulating material of epoxy compound. The exposed metal areas are also tin plated to enhance solderability. In the soldering process it is important that the temperature not exceed 260C if device damage is to be avoided. Various solder alloys can be used for this operation but two types are recommended for best results: 1. 95% Sn, 5% Sb; melting point 237C 2. 96.5% tin, 3.5% silver; melting point 221C 3. 63% tin, 37% lead; melting point 183C Solder is available as preforms or paste. The paste contains both the metal and flux and can be dispensed rapidly. The solder preform requires the application of a flux to assure good wetting of the solder. The type of flux used depends upon the degree of cleaning to be accomplished and is a function of the metal involved. These fluxes range from a mild rosin to a strong acid; e.g., Nickel plating oxides are best removed by an acid base flux while an activated rosin flux may be sufficient for tin plated parts. Since the button is relatively lightweight, there is a tendency for it to float when the solder becomes liquid. To prevent bad joints and misalignment, it is suggested that a weighting or spring loaded fixture be employed. It is also important that severe thermal shock (either heating or cooling) be avoided as it may lead to damage of the die or encapsulant of the part. Copper Terminal Button Base (Heat Sink Material) The base heat sink may be of various materials whose shape and size are a function of the individual application and the heat transfer requirements. Common Materials Steel Copper Aluminum Advantages and Disadvantages Low Cost: relatively low heat conductivity High Cost: high heat conductivity Medium Cost: medium heat conductivity. Relatively expensive to plate and not all platers can process aluminum. Handling of the button during assembly must be relatively gentle to minimize sharp impact shocks and avoid nicking of the plastic. Improperly designed automatic handling equipment is the worst source of unnecessary shocks. Techniques for vacuum handling and spring loading should be investigated. The mechanical stress limits for the button diode are as follows: Compression Tension Torsion Shear 32 lbs. 32 lbs. 6-inch lbs. 55 lbs. 142.3 Newton 142.3 Newton 0.68 Newtons-meters 244.7 Newton http://onsemi.com 494 TRA2532 control but requires sophisticated temperature monitoring systems such as infrared. 3. Ovens are good for batch soldering and are production limited. There are handling problems because of slow cooling. Response time is load dependent, being a function of the watt rating of the oven and the mass of parts. Large ovens may not give an acceptable temperature gradient. Capital cost is low compared to belt furnaces and flame soldering. 4. Hot Plates are good for soldering small quantities of prototype devices. Temperature control is fair with overshoot common because of the exposed heating surface. Solder flow and positioning can be corrected during soldering since the assembly is exposed. Investment cost is very low. Button holding fixtures for use during soldering may be of various materials. Stainless steel has a longer use life while black anodized aluminum is less expensive and will limit heat reflection and enhance absorption. The assembly volume will influence the choice of materials. Fixture dimension tolerances for locating the button must allow for expansion during soldering as well as allowing for button clearance. Heating Techniques The following four heating methods have their advantages and disadvantages depending on volume of buttons to be soldered. 1. Belt furnaces readily handle large or small volumes and are adaptable to establishment of "on-line'' assembly since a variable belt speed sets the run rate. Individual furnace zone controls make excellent temperature control possible. 2. Flame Soldering involves the directing of natural gas flame jets at the base of a heatsink as the heatsink is indexed to various loading-heating- cooling-unloading positions. This is the most economical labor method of soldering large volumes. Flame soldering offers good temperature Regardless of the heating method used, a soldering profile giving the time-temperature relationship of the particular method must be determined to assure proper soldering. Profiling must be performed on a scheduled basis to minimize poor soldering. The time-temperature relationship will change depending on the heating method used. http://onsemi.com 495 7(371.5$*( 3$04,(05 6223(4413 Designed for applications requiring a low voltage rectifier with reverse avalanche characteristics for use as reverse power transient suppressors. Developed to suppress transients in the automotive system, these devices operate in the forward mode as standard rectifiers or reverse mode as power avalanche rectifier and will protect electronic equipment from overvoltage conditions. * High Power Capability * Economical * Increased Capacity by Parallel Operation http://onsemi.com OVERVOLTAGE TRANSIENT SUPPRESSOR 24 - 32 VOLTS Mechanical Characteristics * Case: Epoxy, Molded * Weight: 2.5 Grams (Approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Maximum Lead Temperature for Soldering Purposes: * * 350C 3/8 from Case for 10 Seconds at 5 lbs. Tension Polarity: Indicated by Diode Symbol or Cathode Band Marking: MR2520L AXIAL LEAD BUTTON CASE 194 STYLE 1 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Symbol Value Unit VRRM VRWM VR 23 Volts Repetitive Peak Reverse Surge Current (Time Constant = 10 ms, Duty Cycle 1%, TC = 25C) IRSM 58 Amps Peak Reverse Power (Time Constant = 10 ms, Duty Cycle 1%, TC = 25C) PRSM 2500 Watts IO 6.0 Amps DC Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Single Phase, Resistive Load, 60 Hz, TC = 125C) (See Figure 4) Non-Repetitive Peak Surge Current Surge Supplied at Rated Load Conditions Halfwave, Single Phase Operating and Storage Junction Temperature Range MR2520L LYYWW IFSM 400 Amps TJ, Tstg -65 to +175 C MR2520L = Device Code L = Location Code YY = Year WW = Work Week ORDERING INFORMATION Device Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 0 496 Package Shipping MR2520L Axial Lead Button 1000/Box MR2520LRL Axial Lead Button 800/Reel Publication Order Number: MR2520L/D MR2520L THERMAL CHARACTERISTICS Lead Length Characteristic Thermal Resistance, Junction to Lead, Both Leads to Heat Sink with Equal Length Symbol Max Unit 6.25 mm 10 mm 15 mm RJL 7.5 10 15 C/W - RJC 1.0 C/W Thermal Resistance Junction to Case *Typical ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Instantaneous Forward Voltage (Note 1.) (IF = 100 Amps, TC = 25C) VF - 1.25 Volts Instantaneous Forward Voltage (Note 1.) (IF = 100 Amps, TC = 25C) VF - 0.90 Volts Reverse Current (VR = 20 Vdc, TC = 25C) IR - 10 nAdc Reverse Current (VR = 20 Vdc, TC = 25C) IR - 300 nAdc Breakdown Voltage (Note 1.) (IR = 100 mAdc, TC = 25C) V(BR) 24 32 Volts Breakdown Voltage (Note 1.) (IR = 90 Amp, TC = 150C, PW = 80 s) V(BR) - 40 Volts Dynamic Resistance (IR = 100 mA, TJ = 25C, f = 1.0 kHz) RZ - 5.0 Dynamic Resistance (IR = 40 mA, TJ = 25C) RZ - 0.15 Breakdown Voltage Temperature Coefficient V(BR)TC - 0.09* %/C VFTC - -2* mV/C Forward Voltage Temperature Coefficient @ IF = 10 mA 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. *Typical http://onsemi.com 497 IR, REVERSE CURRENT (NORMALIZED) IF, INSTANTANEOUS FORWARD CURRENT (A) MR2520L 1000 100 10 TJ = 150C 100C 25C 1.0 500 600 700 800 900 1000 VR = 20 V 103 102 101 100 1100 25 50 100 125 150 Figure 1. Forward Voltage Figure 2. Normalized Reverse Current IF(avg), AVERAGE FORWARD CURRENT (A) TJ, JUNCTION TEMPERATURE (C) 3500 3000 2500 2000 1500 1000 0 5 10 15 20 25 175 25 Both leads to heatsink with equal length IF(peak)/IF(avg) = 20 15 10 mm L = 6.25 mm 10 15 mm 5 0 20 40 60 VR, REVERSE VOLTAGE (V) 80 100 120 140 160 180 TL, LEAD TEMPERATURE (C) Figure 3. Typical Capacitance Figure 4. Maximum Current Ratings 40 100 R JL, THERMAL RESISTANCE JUNCTION TO LEAD ( C/W) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Maximum 10-1 10-2 75 VF, INSTANTANEOUS FORWARD VOLTAGE (mV) 4000 C, CAPACITANCE (pF) 104 L = 6.25 mm, both leads to heatsink (equal length) Typical 35 Single to heatsink 30 25 Maximum 20 Typical 15 10 5 Both leads to heatsink (equal length) 0 10-3 10-2 10-1 100 101 102 0 t, TIME (S) 5 10 15 20 LEAD LENGTH (mm) Figure 5. Thermal Response Figure 6. Steady State Thermal Resistance http://onsemi.com 498 25 100 10000 PRSM, PEAK REVERSE POWER (W) IRSM, PEAK REVERSE CURRENT (A) MR2520L TJ = 25C 10 1 10 100 1000 100 1000 1 10 100 1000 t, TIME CONSTANT (mS) t, TIME CONSTANT (mS) Figure 7. Maximum Peak Reverse Current Figure 8. Maximum Peak Reverse Power PEAK REVERSE POWER (W) 1000 W RSM, PEAK REVERSE ENERGY (J) TJ = 25C TJ = 25C 100 10 1 1 10 100 2800 2600 2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 1000 Time Constant = 10 mS Time Constant = 100 mS 25 50 75 100 125 t, TIME CONSTANT (mS) TL, LEAD TEMPERATURE (C) Figure 9. Maximum Reverse Energy Figure 10. Reverse Power Derating 150 100 1.20 PW = 80 S, TL = 25C 1.16 f, FREQUENCY (HERTZ) V Z(Irsm) /V Z(100 mA) 1.18 1.14 1.12 1.10 1.08 1.06 1.04 1.02 1.00 1-5 mm (Both leads to heat sink) 10-1 1-20 mm (Both leads to heat sink) 10-2 10-3 10 20 30 40 50 60 70 80 90 100 110 120 1 IRSM, REPETITIVE PEAK REVERSE SURGE CURRENT (A) Figure 11. Typical Clamping Factor 10 100 TIME CONSTANT (ms) Figure 12. Maximum Load Dump Frequency http://onsemi.com 499 1000 MR2520L 2 Ohms 0 - 150 V 50 mF dl/dt Limitation 100 H MR2532L Figure 13. Load Dump Test Circuit 100 dl/dt < 1 A/s 80 (%) 60 40 20 0 0 0.1 t (50%) t (37%) 0.2 0.3 t (10%) 0.5 0.4 t (37%) = Time Constant t (50%) = 0.7 t (37%) t (10%) = 2.3 t (37%) t, TIME (S) Figure 14. Load Dump Pulse Current http://onsemi.com 500 7(371.5$*( 3$04,(05 6223(44134 Medium Current Designed for applications requiring a low voltage rectifier with reverse avalanche characteristics for use as reverse power transient suppressors. Developed to suppress transients in the automotive system, these devices operate in the forward mode as standard rectifiers or reverse mode as power avalanche rectifier and will protect electronic equipment from overvoltage conditions. * Avalanche Voltage 24 to 32 Volts * High Power Capability * Economical * Increased Capacity by Parallel Operation http://onsemi.com Mechanical Characteristics * Case: Epoxy, Molded * Weight: 2.5 Grams (Approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal AXIAL LEAD BUTTON CASE 194 STYLE 1 Leads are Readily Solderable * Maximum Lead Temperature for Soldering Purposes: * * MARKING DIAGRAM 350C 3/8 from Case for 10 Seconds at 5 lbs. Tension Polarity: Indicated by Diode Symbol or Cathode Band Marking: MR2535L MR2535L LYYWW MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Symbol Value Unit VRRM VRWM VR 20 Volts Repetitive Peak Reverse Surge Current (Time Constant = 10 ms, Duty Cycle 1%, TC = 25C) (See Note 1) IRSM 62 Amps Average Rectified Forward Current (Single Phase, Resistive Load, 60 Hz, TC = 125C) (See Figure 4) IO 6.0 Amps IFSM 600 Amps DC Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Non-Repetitive Peak Surge Current Surge Supplied at Rated Load Conditions Halfwave, Single Phase Operating and Storage Junction Temperature Range Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 4 MR2535L = Device Code L = Location Code YY = Year WW = Work Week ORDERING INFORMATION TJ, Tstg Device C -65 to +175 501 Package Shipping MR2535L Axial Lead Button 1000/Box MR2535LRL Axial Lead Button 800/Reel Publication Order Number: MR2535L/D MR2535L THERMAL CHARACTERISTICS Lead Length Characteristic Thermal Resistance, Junction to Lead @ Both Leads to Heat Sink, Equal Length Thermal Resistance Junction to Case 1/4 3/8 1/2 Symbol Max Unit RJL 7.5 10 13 C/W RJC 0.8* C/W ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Symbol Min Max Unit Instantaneous Forward Voltage (Note 1.) (iF = 100 Amps, TC = 25C) Characteristic vF - 1.1 Volts Reverse Current (VR = 20 Vdc, TC = 25C) IR - 200 nAdc Breakdown Voltage (Note 1.) (IR = 100 mAdc, TC = 25C) V(BR) 24 32 Volts Breakdown Voltage (Note 1.) (IR = 90 Amp, TC = 150C, PW = 80 s) V(BR) - 40 Volts V(BR)TC - 0.096* %/C VFTC - 2* mV/C Breakdown Voltage Temperature Coefficient Forward Voltage Temperature Coefficient @ IF = 10 mA 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. http://onsemi.com 502 IF, INSTANTANEOUS FORWARD CURRENT (A) MR2535L 1000 IR, REVERSE CURRENT (nA) 1000 75C 100 TJ = 125C 25C 10 1 10 1 0.1 0.01 600 700 800 900 1000 25 50 100 125 150 Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current versus Junction Temperature IF(avg), AVERAGE FORWARD CURRENT (A) TJ, JUNCTION TEMPERATURE (C) TJ = 25C 3500 3000 2500 2000 1500 1000 0 5 10 15 20 25 25 Both leads to heatsink with equal length IF(peak)/IF(avg) = 20 15 10 mm L = 6.25 mm 10 15 mm 5 0 20 40 60 VR, DC BLOCKING VOLTAGE (V) 80 100 120 140 160 180 TL, LEAD TEMPERATURE (C) Figure 3. Typical Capacitance Figure 4. Maximum Current Ratings 45 R JL, THERMAL RESISTANCE JUNCTION TO LEAD ( C/W) 1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 75 VF, INSTANTANEOUS FORWARD VOLTAGE (mV) 4000 C, CAPACITANCE (pF) VR = 20 V 100 0.1 L = 6.25 mm, both leads to heatsink (equal length) 0.01 40 Maximum 35 Typical 30 Single to heatsink 25 Maximum 20 Typical 15 10 5 Both leads to heatsink (equal length) 0 0.001 0.01 0.1 1 10 100 0 t, TIME (S) 5 10 15 20 LEAD LENGTH (mm) Figure 5. Thermal Response Figure 6. Steady State Thermal Resistance http://onsemi.com 503 25 100 10000 PRSM, PEAK REVERSE POWER (W) IRSM, PEAK REVERSE CURRENT (A) MR2535L TJ = 25C 10 1 10 100 1000 100 1000 1 10 100 1000 t, TIME CONSTANT (mS) t, TIME CONSTANT (mS) Figure 7. Maximum Peak Reverse Current Figure 8. Maximum Peak Reverse Power 2400 PEAK REVERSE POWER (W) 1000 TJ = 25C 100 10 2000 Time Constant = 10 mS 1600 1200 1 800 Time Constant = 100 mS 400 0 1 10 100 1000 25 50 75 100 125 t, TIME CONSTANT (mS) TL, LEAD TEMPERATURE (C) Figure 9. Maximum Reverse Energy Figure 10. Reverse Power Derating 1.20 1.18 V Z(Irsm) /V Z(100 mA) W RSM, PEAK REVERSE ENERGY (J) TJ = 25C PW = 80 S, TL = 25C 1.16 1.14 1.12 1.10 1.08 1.06 1.04 1.02 1.00 10 20 30 40 50 60 70 80 90 100 110 120 IRSM, REPETITIVE PEAK REVERSE SURGE CURRENT (A) Figure 11. Typical Clamping Factor http://onsemi.com 504 150 MR2535L 2 Ohms 0 - 150 V 50 mF dl/dt Limitation 100 H MR2535L Figure 12. Load Dump Test Circuit 100 dl/dt < 1 A/s 80 (%) 60 40 20 0 0 0.1 t (50%) t (37%) 0.2 0.3 t (10%) 0.5 0.4 t (37%) = Time Constant t (50%) = 0.7 t (37%) t (10%) = 2.3 t (37%) t, TIME (S) Figure 13. Load Dump Pulse Current http://onsemi.com 505 7(371.5$*( 3$04,(05 6223(4413 ...designed for applications requiring a diode with reverse avalanche characteristics for use as reverse power transient suppressor. Developed to suppress transients in the automotive system, this device operates in reverse mode as power zener diode and will protect expensive modules such as ignition, injection and autoblocking systems from overvoltage conditions. http://onsemi.com * High Power Capability * Economical Cathode Mechanical Characteristics * * * * * Finish: All External Surfaces are Corrosion Resistant Polarity: Cathode to Terminal Weight: 1.78 Grams (Approximately) Maximum Temperature for Soldering Purposes: 260C for 10 s using a Belt Furnace Marking: MR2835S TOP CAN CASE 460 MARKING DIAGRAM ## MR2835S YYWW MAXIMUM RATINGS Rating Symbol Value Unit VR 23 Volts Peak Repetitive Reverse Surge Current (Time Constant = 10 ms, TC = 25C) IRSM 62 Amps Non-Repetitive Peak Surge Current (Halfwave, Single Phase, 50 Hz) IFSM 400 Amps Storage Temperature Range Tstg -40 to +150 C Operating Junction Temperature Range TJ -40 to +150 C DC Blocking Voltage ## = Lot Number MR2835S = Specific Device Code YY = Year WW = Work Week ORDERING INFORMATION Device MR2835S Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 3 506 Package Shipping Top Can 500/Tape & Reel Publication Order Number: MR2835S/D MR2835S THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RJC 1.0 C/W Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Instantaneous Forward Voltage (IF = 100 A) (Note 1.) VF - 1.1 Volts Reverse Current (VR = 20 V) (Note 1.) IR - 5.0 A Breakdown Voltage (IZ = 100 mA) (Note 1.) V(BR) 24 32 Volts Breakdown Voltage (IZ = 80 A, TC = 85C, PW = 80 s) V(BR) - 40 Volts V(BR)TC - 0.09 %/C VFTC - -2.0* mV/C Breakdown Voltage Temperature Coefficient Forward Voltage Temperature Coefficient (IF = 10 mA) 1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2%. *Typical 9> 9I %"&"--"(' (!&, / ! B &+, Figure 1. Load Dump Test Circuit MOUNTING AND HANDLING The mechanical stress limits for the Top Can diode are as follows: 33.7 lbs 33.7 lbs 6.3 inch lbs 56.2 lbs Compression: Tension: Torsion: Shear: 150 newtons 150 newtons 0.7 newton meters 250 newtons MECHANICAL STRESS COMPRESSION TORSION SHEAR TENSION http://onsemi.com 507 MR2835S 9> 9I < &) H "+,& )$+/+,.++'- I -"& (',-'I I I I I I I ->B: H:8DC9 -"& (',-'- B, Figure 2. Load Dump Pulse Current Figure 3. Maximum Peak Reverse Current - "+ +/+,.++'- 0 +,& )$+/+,'+ "# -# -# -# -"& (',-'- B, /+ +/+, /(%- / Figure 4. Maximum Reverse Energie Figure 5. Typical Reverse Current )+,& )$+/+,)(0+0 -# -# " "',-'-'(.,(+0+.++'- - -# - / "',-'-'(., (+0+ /(%- B/ -"& (',-'- B, Figure 6. Typical Forward Voltage Figure 7. Maximum Peak Reverse Power http://onsemi.com 508 -"& (',-'- BH - C )$+/+,)(0+0 MR2835S -# -"& (',-'- BH , -&)+-.+ /+ / Figure 8. Reverse Power Derating Figure 9. Typical Reverse Capacitance Reel of 500 Units IIIIIIIII IIIIIIIII IIIIIIIII IIIIIIIII IIIIIIIII IIIIIIIII IIIIIIIII IIIIIIIII IIIIIIIII LOKREEL CARRIER TAPE CARDBOARD COVER TAPE A BAR CODE LABEL (stuck on the opposite side of the carrier holes) ## MR2835S YYWW ## MR2835S YYWW ## MR2835S YYWW T # & & & 11 "&',"(', B>AA>B:I:G BAR CODE LABEL Figure 10. Reel Packing of MR2835S - Top Can http://onsemi.com 509 W1 N W3 W2 651/15,7( 3$04,(05 !1.5$*( 6223(4413 20 V - 27 V Designed for Automotive Applications (Alternator) requiring Reverse Avalanche Capability for use as Transient Voltage Suppressor. Developed to suppress transients in automotive systems, this device operates in the forward mode as Standard Rectifier or in Reverse as Transient Voltage Suppressor for Centralized Protection. For further information referring to Mounting or Operating Conditions, contact your nearest ON Semiconductor Sales Representative. http://onsemi.com N SUFFIX (Anode to Cup) P SUFFIX (Cathode to Cup) CASE 193A Mechanical Characteristics * Finish: 100% Tin Plated All External Surfaces are Corrosion Resistant * Weight: 2.5 Grams (Approximately) Packaging/Labeling * Two Sealed Bags into a Cardboard Box * Device Number Labeled on the Bag MARKING DIAGRAM Marking * The Devices are Laser Marked on the Epoxy Surface MAXIMUM RATING Rating Symbol Value Unit DC Blocking Voltage VR 18 Volts Average Forward Current (Single Phase, Resistive Load, TC = 185C) IO 32 Amps IRSM IRSM 90 40 Non-Repetitive Peak Surge Current (Halfwave, Single Phase, 50 Hz) IFSM 400 Amps Storage Temperature Range Tstg -40 to +200 C Maximum Operating Junction Temperature TJ 200 C Peak Repetitive Reverse Surge Current (Time Constant = 10 ms, TC = 25C) (Time Constant = 80 ms, TC = 25C) Semiconductor Components Industries, LLC, 2000 September, 2000 - Rev. 0 NL = Location Code 3N or 3P = Device Code and Polarity YY = Year WW = Work Week ### = Assembly Lot Number Amps ORDERING INFORMATION 510 Device Package Shipping MR3227N Button Can 5000 Units/Box MR3227P Button Can 5000 Units/Box Publication Order Number: MR3227/D MR3227 THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction to Case Symbol Value Unit RJC 0.5 C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit Instantaneous Forward Voltage (Note 1.) (IF = 100 Amps, TC = 25C) vF - 1.18 Volts Reverse Current (Note 1.) (VR = 16 Vdc, TC = 25C) IR - 1.0 A Breakdown Voltage (Note 1.) (IR = 100 mA, TC = 25C) V(BR) 20 27 Volts Breakdown Voltage (IR = 80 Amps, TC = 25C, PW = 80 s) (IR = 80 Amps, TC = 85C, PW = 80 s) V(BR) - - 35 37 Breakdown Voltage Temperature Coefficient Forward Voltage Temperature Coefficient (IF = 10 mA) Volts V(BR)TC 0.095* %/C VFTC -2* mV/C 1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2%. IF, INSTANTANEOUS FORWARD CURRENT (A) *Typical IR, REVERSE CURRENT ( A) 1000 1000 100 TJ = 200C 10 150C 1 100C 0.1 25C 0.01 0.001 0 5 10 15 20 VR, REVERSE VOLTAGE (V) 100 TJ = 200C 10 150C 1 500 25C 800 900 1000 VF, INSTANTANEOUS FORWARD VOLTAGE (mV) Figure 1. Typical Reverse Current Figure 2. Typical Forward Voltage 1000 10000 PRSM, PEAK REVERSE POWER (W) IRSM, PEAK REVERSE CURRENT (A) 100C 700 600 TC = 25C 100 10 1 10 100 1000 TC = 25C 1000 100 1 10 100 t, TIME CONSTANT (mS) t, TIME CONSTANT (mS) Figure 3. Maximum Peak Reverse Current Figure 4. Maximum Peak Reverse Power http://onsemi.com 511 1000 W RSM, PEAK REVERSE ENERGY (J) 1000 TC = 25C 100 10 1 1 10 100 1000 IF(avg), AVERAGE FORWARD CURRENT (A) MR3227 60 50 40 30 20 10 0 100 120 140 160 180 200 t, TIME CONSTANT (mS) TC, CASE TEMPERATURE (C) Figure 5. Maximum Reverse Energy Figure 6. Maximum Current Rating 8000 6000 5000 2 Ohms di/dt Limitation 100 H 4000 3000 0 - 150 V x mF MR3227 2000 1000 Figure 8. Load Dump Test Circuit 0 0 5 10 15 20 VR, REVERSE VOLTAGE (V) Figure 7. Typical Capacitance 100 di/dt < 1 A/s 80 60 (%) C, CAPACITANCE (pF) 7000 40 20 0 0 0.1 t (50%) t (37%) 0.2 0.3 t (10%) 0.4 0.5 t (37%) = Time Constant t (50%) = 0.7 t (37%) t (10%) = 2.3 t (37%) t, TIME (S) Figure 9. Load Dump Pulse Current http://onsemi.com 512 220 651/15,7( 3$04,(05 !1.5$*( 6223(4413 20 V - 27 V Designed for Automotive Applications (Alternator) requiring Reverse Avalanche Capability for use as Transient Voltage Suppressor. Developed to suppress transients in automotive systems, this device operates in the forward mode as Standard Rectifier or in Reverse as Transient Voltage Suppressor for Centralized Protection. For further information referring to Mounting or Operating Conditions, contact your nearest ON Semiconductor Sales Representative. http://onsemi.com N SUFFIX (Anode to Cup) P SUFFIX (Cathode to Cup) CASE 193A Mechanical Characteristics * Finish: 100% Tin Plated All External Surfaces are Corrosion Resistant * Weight: 2.6 Grams (Approximately) Packaging/Labeling * Two Sealed Bags into a Cardboard Box * Device Number Labeled on the Bag MARKING DIAGRAM Marking * The Devices are Laser Marked on the Epoxy Surface MAXIMUM RATING Rating Symbol Value Unit DC Blocking Voltage VR 18 Volts Average Forward Current (Single Phase, Resistive Load, TC = 185C) IO 40 Amps IRSM IRSM 110 50 Non-Repetitive Peak Surge Current (Halfwave, Single Phase, 50 Hz) IFSM 500 Amps Storage Temperature Range Tstg -40 to +200 C Maximum Operating Junction Temperature TJ 200 C Peak Repetitive Reverse Surge Current (Time Constant = 10 ms, TC = 25C) (Time Constant = 80 ms, TC = 25C) Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 1 NL = Location Code 1N or 1P = Device Code and Polarity YY = Year WW = Work Week ### = Assembly Lot Number Amps ORDERING INFORMATION 513 Device Package Shipping MR4027N Button Can 5000 Units/Box MR4027P Button Can 5000 Units/Box Publication Order Number: MR4027/D MR4027 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RJC 0.4 C/W Thermal Resistance Junction to Case ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit Instantaneous Forward Voltage (Note 1.) (IF = 100 Amps, TC = 25C) vF - 1.1 Volts Reverse Current (Note 1.) (VR = 16 Vdc, TC = 25C) IR - 1.0 A Breakdown Voltage (Note 1.) (IR = 100 mA, TC = 25C) V(BR) 20 27 Volts Breakdown Voltage (IR = 80 Amps, TC = 25C, PW = 80 s) (IR = 80 Amps, TC = 85C, PW = 80 s) V(BR) - - 35 37 Breakdown Voltage Temperature Coefficient Forward Voltage Temperature Coefficient (IF = 10 mA) Volts V(BR)TC 0.095* %/C VFTC -2* mV/C 1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2%. IR, REVERSE CURRENT ( A) 1000 IF, INSTANTANEOUS FORWARD CURRENT (A) *Typical 1000 TJ = 200C 100 150C 10 100C 1 0.1 25C 0.01 0.001 0 5 10 15 20 VR, REVERSE VOLTAGE (V) 100 TJ = 200C 10 150C 1 500 25C 800 900 1000 VF, INSTANTANEOUS FORWARD VOLTAGE (mV) Figure 1. Typical Reverse Current Figure 2. Typical Forward Voltage 1000 10000 PRSM, PEAK REVERSE POWER (W) IRSM, PEAK REVERSE CURRENT (A) 100C 700 600 TC = 25C 100 10 1 10 100 1000 TC = 25C 1000 100 1 10 100 t, TIME CONSTANT (mS) t, TIME CONSTANT (mS) Figure 3. Maximum Peak Reverse Current Figure 4. Maximum Peak Reverse Power http://onsemi.com 514 1000 W RSM, PEAK REVERSE ENERGY (J) 1000 TC = 25C 100 10 1 1 10 100 1000 IF(avg), AVERAGE FORWARD CURRENT (A) MR4027 60 50 40 30 20 10 0 100 120 140 160 180 200 t, TIME CONSTANT (mS) TC, CASE TEMPERATURE (C) Figure 5. Maximum Reverse Energy Figure 6. Maximum Current Rating 10000 8000 2 Ohms di/dt Limitation 100 H 7000 6000 0 - 150 V x mF MR4027N MR4027P 5000 Figure 8. Load Dump Test Circuit 4000 0 5 10 15 20 VR, REVERSE VOLTAGE (V) Figure 7. Typical Capacitance 100 di/dt < 1 A/s 80 60 (%) C, CAPACITANCE (pF) 9000 40 20 0 0 0.1 t (50%) t (37%) 0.2 0.3 t (10%) 0.4 0.5 t (37%) = Time Constant t (50%) = 0.7 t (37%) t (10%) = 2.3 t (37%) t, TIME (S) Figure 9. Load Dump Pulse Current http://onsemi.com 515 220 651/15,7( 3$04,(05 !1.5$*( 6223(4413 34 V - 45 V Designed for Automotive Applications (Alternator) requiring Reverse Avalanche Capability for use as Transient Voltage Suppressor. Developed to suppress transients in automotive systems, this device operates in the forward mode as Standard Rectifier or in Reverse as Transient Voltage Suppressor for Centralized Protection. For further information referring to Mounting or Operating Conditions, contact your nearest ON Semiconductor Sales Representative. http://onsemi.com N SUFFIX (Anode to Cup) P SUFFIX (Cathode to Cup) CASE 193A Mechanical Characteristics * Finish: 100% Tin Plated All External Surfaces are Corrosion Resistant * Weight: 2.6 Grams (Approximately) Packaging/Labeling MARKING DIAGRAM * Two Sealed Bags into a Cardboard Box * Device Number Labeled on the Bag Marking * The Devices are Laser Marked on the Epoxy Surface MAXIMUM RATING Rating Symbol Value Unit DC Blocking Voltage VR 30 Volts Average Forward Current (Single Phase, Resistive Load, TC = 185C) IO 40 Amps IRSM IRSM 55 25 Non-Repetitive Peak Surge Current (Halfwave, Single Phase, 50 Hz) IFSM 500 Amps Storage Temperature Range Tstg -40 to +200 C Maximum Operating Junction Temperature TJ 200 C Peak Repetitive Reverse Surge Current (Time Constant = 10 ms, TC = 25C) (Time Constant = 80 ms, TC = 25C) Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 1 NL = Location Code 2N or 2P = Device Code and Polarity YY = Year WW = Work Week ### = Assembly Lot Number Amps ORDERING INFORMATION 516 Device Package Shipping MR4045N Button Can 5000 Units/Box MR4045P Button Can 5000 Units/Box Publication Order Number: MR4045/D MR4045 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RJC 0.4 C/W Thermal Resistance Junction to Case ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit Instantaneous Forward Voltage (Note 1.) (IF = 100 Amps, TC = 25C) vF - 1.1 Volts Reverse Current (Note 1.) (VR = 28 Vdc, TC = 25C) IR - 1.0 A Breakdown Voltage (Note 1.) (IR = 100 mA, TC = 25C) V(BR) 34 45 Volts Breakdown Voltage (IR = 80 Amps, TC = 25C, PW = 80 s) (IR = 80 Amps, TC = 85C, PW = 80 s) V(BR) - - 53 55 Breakdown Voltage Temperature Coefficient Forward Voltage Temperature Coefficient (IF = 10 mA) Volts V(BR)TC 0.095* %/C VFTC -2* mV/C 1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2%. IR, REVERSE CURRENT ( A) 1000 1000 TJ = 200C 100 150C 10 100C 1 0.1 25C 0.01 0.001 0 10 20 30 100 TJ = 200C 10 150C 100C 1 500 600 700 25C 800 900 1000 1100 VR, REVERSE VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (mV) Figure 1. Typical Reverse Current Figure 2. Typical Forward Voltage 100 10000 PRSM, PEAK REVERSE POWER (W) IRSM, PEAK REVERSE CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) *Typical TC = 25C 10 1 10 100 1000 TC = 25C 1000 100 1 10 100 t, TIME CONSTANT (mS) t, TIME CONSTANT (mS) Figure 3. Maximum Peak Reverse Current Figure 4. Maximum Peak Reverse Power http://onsemi.com 517 1000 W RSM, PEAK REVERSE ENERGY (J) 1000 TC = 25C 100 10 1 1 10 100 1000 IF(avg), AVERAGE FORWARD CURRENT (A) MR4045 60 50 40 30 20 10 0 100 120 140 160 180 200 t, TIME CONSTANT (mS) TC, CASE TEMPERATURE (C) Figure 5. Maximum Reverse Energy Figure 6. Maximum Current Rating 10000 2 Ohms di/dt Limitation 100 H 8000 7000 0 - 150 V x mF MR4045N MR4045P 6000 Figure 8. Load Dump Test Circuit 5000 4000 0 5 10 15 20 VR, REVERSE VOLTAGE (V) Figure 7. Typical Capacitance 100 di/dt < 1 A/s 80 60 (%) C, CAPACITANCE (pF) 9000 40 20 0 0 0.1 t (50%) t (37%) 0.2 0.3 t (10%) 0.4 0.5 t (37%) = Time Constant t (50%) = 0.7 t (37%) t (10%) = 2.3 t (37%) t, TIME (S) Figure 9. Load Dump Pulse Current http://onsemi.com 518 220 CHAPTER 6 Tape & Reel/Packaging Specifications http://onsemi.com 519 Tape and Reel Specifications and Packaging Specifications Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the shipping container for various products and requires a minimum of handling. The antistatic/conductive tape provides a secure cavity for the product when sealed with the "peel-back" cover tape. * * * * * * * * Two Reel Sizes Available (7 and 13) Used for Automatic Pick and Place Feed Systems Minimizes Product Handling EIA 481, -1, -2 SOD-123 in 8 mm Tape SMB in 12 mm Tape DPAK, SMC in 16 mm Tape D2PAK in 24 mm Tape Use the standard device title and add the required suffix as listed in the option table on the following page. Note that the individual reels have a finite number of devices depending on the type of product contained in the tape. Also note the minimum lot size is one full reel for each line item, and orders are required to be in increments of the single reel quantity. SOD-123 8 mm SMB SMC 12 mm 16 mm DPAK D2PAK 16 mm 24 mm DIRECTION OF FEED EMBOSSED TAPE AND REEL ORDERING INFORMATION Package Tape Width (mm) Pitch mm (inch) Reel Size mm (inch) Devices Per Reel and Minimum Order Quantity Device Suffix DPAK 16 8.0 0.1 (.315 .004) 330 (13) 2,500 T4 D2PAK 24 16.0 0.1 (.630 .004) 330 (13) 800 T4 SMB 12 8.0 0.1 (.315 .004) 330 (13) 2,500 T3 SMC 16 8.0 0.1 (.315 .004) 330 (13) 2,500 T3 SOD-123 8 8 4.0 0.1 (.157 .004) 178 330 (7) (13) 3,000 10,000 T1 T3 http://onsemi.com 520 EMBOSSED TAPE AND REEL DATA FOR DISCRETES CARRIER TAPE SPECIFICATIONS ) $ ) I -DE DK:G -6E: $ )>I8=:H JBJA6I>K: -DA:G6C8: DC -6E: BB 0 ,:: 'DI: ) DG &68=>C: +:;:G:C8: (CAN "C8AJ9>C< G6;I 6C9 +"" DC8:CIG>8 GDJC9 DG DBEDC:CIH BB M BB 6C9 %6G<:G :CI:G %>C:H D; 6K>IN B7DHHB:CI .H:G >G:8I>DC D; ::9 -DE DK:G -6E: -=>8@C:HH I BB &6M 6G D9: %67:A + &>C -6E: 6C9 DBEDC:CIH ,=6AA )6HH GDJC9 +69>JH P+ 0>I=DJI 6B6<: B7DHH:9 6GG>:G :C9>C< +69>JH BB &6M>BJB DBEDC:CI +DI6I>DC B7DHHB:CI BB &6M -NE>86A DBEDC:CI 6K>IN :CI:G %>C: -6E: BB &6M -NE>86A DBEDC:CI :CI:G %>C: BB 6B7:G -DE />:L AADL67A: 6B7:G -D : BB BB 'DC688JBJA6I>K: (K:G BB DIMENSIONS #)4, ".;, ): ! .2 # ): & ): RBB RBB R&>C QQ RBB QQ QQ RBB QQ RBBR&6M QQ RBB QQ QQ RBB QQ RBB RBB RBB RBB RBB QQ RBB QQ Q Q Q QQ RBB QQ RBBR&6M RBB RBB QQ RBB QQ RBBR&6M RBB RBB RBB QQ RBB QQ RBBR&6M RBB RBBR&>C RBB QQ RBB QQ Metric dimensions govern -- English are in parentheses for reference only. NOTE 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within .05 mm min. to .50 mm max., NOTE 1: the component cannot rotate more than 10 within the determined cavity. NOTE 2: If B1 exceeds 4.2 mm (.165) for 8 mm embossed tape, the tape may not feed through all tape feeders. NOTE 3: Pitch information is contained in the Embossed Tape and Reel Ordering Information on pg. 6-3. http://onsemi.com 521 EMBOSSED TAPE AND REEL DATA FOR DISCRETES - &6M (JIH>9: >B:CH>DC &:6HJG:9 6I 9<: BB &>C BB BB BB &>C BB &>C JAA +69>JH "CH>9: >B:CH>DC &:6HJG:9 ':6G !J7 Size A Max 8 mm 330 mm (12.992) 8.4 mm + 1.5 mm, -0.0 (.33 + .059, -0.00) 14.4 mm (.56) 12 mm 330 mm (12.992) 12.4 mm + 2.0 mm, -0.0 (.49 + .079, -0.00) 18.4 mm (.72) 16 mm 360 mm (14.173) 16.4 mm + 2.0 mm, -0.0 (.646 + .078, -0.00) 22.4 mm (.882) 24 mm 360 mm (14.173) 24.4 mm + 2.0 mm, -0.0 (.961 + .070, -0.00) 30.4 mm (1.197) G T Max Reel Dimensions Metric Dimensions Govern -- English are in parentheses for reference only http://onsemi.com 522 LEAD TAPE PACKAGING STANDARDS FOR AXIAL-LEAD COMPONENTS Product Category Case Type Device Title Suffix MPQ Quantity Per Reel (Item 3.3.7) Component Spacing A Dimension Tape Spacing B Dimension Reel Dimension C Reel Dimension D (Max) Max Off Alignment E Case 17-02 Surmetic 40 & 600 Watt TVS RL 4000 0.2 +/- 0.015 2.062 +/- 0.059 3 14 0.047 Case 41A-02 1500 Watt TVS RL4 1500 0.4 +/- 0.02 2.062 +/- 0.059 3 14 0.047 Case 51-02 DO-7 Glass (For Reference only) RL 3000 0.2 +/- 0.02 2.062 +/- 0.059 3 14 0.047 Case 59-03 DO-41 Glass & DO-41 Surmetic 30 RL 6000 0.2 +/- 0.015 2.062 +/- 0.059 3 14 0.047 RL 5000 0.2 +/- 0.02 2.062 +/- 0.059 3 14 0.047 RL 800 0.4 +/- 0.02 1.875 +/- 0.059 3 14 0.047 Rectifier Case 59-04 500 Watt TVS Rectifier Case 194-04 110 Amp TVS (Automotive) Rectifier Case 267-02 Rectifier RL 1500 0.4 +/- 0.02 2.062 +/- 0.059 3 14 0.047 Case 299-02 DO-35 Glass RL 5000 0.2 +/- 0.02 2.062 +/- 0.059 3 14 0.047 Table 1. Packaging Details (all dimensions in inches) (K:G6AAR% "I:BR Kraft Paper Reel B Roll Pad Container -6E: AJ: "I:B 6I=D9: A "I:B &6M (;; A><CB:CI "I:B DI= ,>9:H -6E: 0=>I: "I:B CD9: Figure 1. Reel Packing D1 D2 "I:B "I:B Figure 2. Component Spacing Optional Design 1.188 3.5 Dia. Item 3.4 Figure 3. Reel Dimensions http://onsemi.com 523 http://onsemi.com 524 CHAPTER 7 Surface Mount Information http://onsemi.com 525 INFORMATION FOR USING SURFACE MOUNT PACKAGES RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. POWER DISSIPATION FOR A SURFACE MOUNT DEVICE PD = +# -!+&%+,",-'#.'-"(' -(&"'- 0 The power dissipation for a surface mount device is a function of the drain/collector pad size. These can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows: - 06IIH 06IIH 06IIH TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device. For example, for a SOT-223 device, PD is calculated as follows. &DJCI:9 DC I=: )$ ;DDIEG>CI + ,*.+ "'!, Figure 1. Thermal Resistance versus Drain Pad Area for the SOT-223 Package (Typical) +# -!+&%+,",-'#.'-"(' -(&"'- 0 PD = 150C - 25C 156C/W D6G9 &6I:G>6A + DO DEE:G = 800 milliwatts 06IIH The 156C/W for the SOT-223 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 800 milliwatts. There are other alternatives to achieving higher power dissipation from the surface mount packages. One is to increase the area of the drain/collector pad. By increasing the area of the drain/collector pad, the power dissipation can be increased. Although the power dissipation can almost be doubled with this method, area is taken up on the printed circuit board which can defeat the purpose of using surface mount technology. For example, a graph of RJA versus drain pad area is shown in Figures 1, 2 and 3. D6G9 &6I:G>6A + DO DEE:G - 06IIH 06IIH + ,*.+ "'!, Figure 2. Thermal Resistance versus Drain Pad Area for the DPAK Package (Typical) +# -!+&%+,",-'#.'-"(' -(&"'- 0 Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. D6G9 &6I:G>6A + DO DEE:G - 06IIH 06IIH 06IIH + ,*.+ "'!, Figure 3. Thermal Resistance versus Drain Pad Area for the D2PAK Package (Typical) http://onsemi.com 526 SOLDER STENCIL GUIDELINES pattern of the opening in the stencil for the drain pad is not critical as long as it allows approximately 50% of the pad to be covered with paste. Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. Solder stencils are used to screen the optimum amount. These stencils are typically 0.008 inches thick and may be made of brass or stainless steel. For packages such as the SC-59, SC-70/SOT-323, SOD-123, SOT-23, SOT-143, SOT-223, SO-8, SO-14, SO-16, and SMB/SMC diode packages, the stencil opening should be the same as the pad size or a 1:1 registration. This is not the case with the DPAK and D2PAK packages. If a 1:1 opening is used to screen solder onto the drain pad, misalignment and/or "tombstoning" may occur due to an excess of solder. For these two packages, the opening in the stencil for the paste should be approximately 50% of the tab area. The opening for the leads is still a 1:1 registration. Figure 4 shows a typical stencil for the DPAK and D2PAK packages. The CC CC CC CC CCC CCC CC CCC CCC CC CCC CCC CCC CCC ,(%+ ),- ()'"' , ,-'"% Figure 4. Typical Stencil for DPAK and D2PAK Packages SOLDERING PRECAUTIONS * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used since the use of forced cooling will increase the temperature gradient and will result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10C. * The soldering temperature and time should not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. * Due to shadowing and the inability to set the wave height to incorporate other surface mount components, the D2PAK is not recommended for wave soldering. http://onsemi.com 527 TYPICAL SOLDER HEATING PROFILE actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177-189C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. Taken together, these control settings make up a heating "profile" for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 5 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems, but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The line on the graph shows the ,-) )+!3(' P+&) ,-) ,-) /'!-"' P,($ 3(', P+&) ,-) !-"' 3(', P,($ ,-) /'- ,"+ .+/ (+ !" ! &,, ,,&%", ,(%+ ", %"*." (+ -( ,(', )'"' (' &,, ( ,,&%2 ,"+ .+/ (+ %(0 &,, ,,&%", -&1 -"& -( &"'.-, -(-% Figure 5. Typical Solder Heating Profile http://onsemi.com 528 ,-) ((%"' -( )$ ,(%+ #("'- ,-) !-"' 3(', P,)"$ Footprints for Soldering inches mm inches mm SOT-223 SMB inches mm inches SMC DPAK mm EEEE EEEE EEEE EEEE EEEE inches EEEE EEEE EEEE EEEE EEEE mm D2PAK SOD-123 http://onsemi.com 529 BB >C8=:H Footprints for Soldering >C8=:H BB inches mm SMA POWERMITE http://onsemi.com 530 CHAPTER 8 TO-220 Leadform Information http://onsemi.com 531 Leadform Options -- TO-220 (Case 221A) * Leadform options require assignment of a special part number before ordering. * Contact your local ON Semiconductor representative for special part number and pricing. * 10,000 piece minimum quantity orders are required. * Leadform orders are non-cancellable after processing. * Leadforms apply to both ON Semiconductor Case 221A-04 and 221A-06 except as noted. ! " ! &"' + &"' + -2) &1 -2) &(.'-"' ,.+ ! ! , U &>C &>C U &>C &>C .'+," ( % % .'+," ( % % % (--(& ( !-,"'$ &(.'-"' ,.+ http://onsemi.com 532 TO-220 Leadform Options (continued) ! ! , U &>C &>C U &>C &>C + R &(.'-"' ,.+ R -2) ! R R + -2) -2) ! , U &>C U &>C &"' .'+," ( % R R + + &1 &(.'-"' ,.+ &(.'-"' ,.+ + + + + + http://onsemi.com 533 TO-220 Leadform Options (continued) ! ! " &(.'-"' ,.+ + + + R R &"' % % R + ! ! ! $ , U &>C U &>C + R R %(+& %, http://onsemi.com 534 + TO-220 Leadform Options (continued) ! % ! $ R .'+," ( % &(.'-"' ,.+ ! + + ! & %, R http://onsemi.com 535 TO-220 Leadform Options (continued) ! ! , + U U %:69 'DI -G>BB:9 &>C + R + + + http://onsemi.com 536 + CHAPTER 9 Package Outline Dimensions http://onsemi.com 537 http://onsemi.com 538 Package Outline Dimensions GLASS/PLASTIC DO-41 CASE 59-03 ISSUE M B '(-, %% +.%, ' '(-, ,,("- 0"-! # ( (.-%"' ,!%% ))%2 )(%+"-2 '(- 2 -!( ' % "&-+ '(- ('-+(%% 0"-!"' "&',"(' D K F A #!" 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' , , ,-2% )"' &- &- - PACKAGE OUTLINE DIMENSIONS (continued) AXIAL LEAD CASE 267-03 ISSUE G K D A B K ,-2% )"' -!( )(%+"-2 ' '( ,-2% '(-, "&',"('"' ' -(%+'"' )+ '," 2& ('-+(%%"' "&',"(' "'! " ' #!" ' '( )(%+"-2 AXIAL LEAD CASE 267-05 ISSUE G K D A B K ,-2% )"' -!( )(%+"-2 ' '( ,-2% '( )(%+"-2 http://onsemi.com 543 '(-, "&',"('"' ' -(%+'"' )+ '," 2& ('-+(%%"' "&',"(' "'! " ' #!" ' PACKAGE OUTLINE DIMENSIONS (continued) TO-218 THREE LEAD TO-218 CASE 340D-02 ISSUE B C Q B U S '(-, "&',"('"' ' -(%+'"' )+ '," 2& ('-+(%%"' "&',"(' &"%%"&-+ E A L K D " $ % J H #!" ' + + + " ' + + V G ,-2% )"' , (%%-(+ &"--+ (%%-(+ ,-2% )"' '( -!( '( -!( TO-218 TWO LEAD TO-218 CASE 340E-02 ISSUE A B '(-, "&',"('"' ' -(%+'"' )+ '," 2& ('-+(%%"' "&',"(' &"%%"&-+ C Q E U A S L K D V G " $ % J H #!" ' + + + ,-2% )"' -!( '( -!( http://onsemi.com 544 " ' + + PACKAGE OUTLINE DIMENSIONS (continued) TO-247 CASE 340L-02 ISSUE D '(-, TS "&',"('"' ' -(%+'"' )+ '," 2& TS ('-+(%%"' "&',"(' &"%%"&-+ -T- C -B- E U L N A -Q- - & P -Y- K W & $ & J F 2 PL #!" ' , , " ' , , H G D 3 PL & 2 * ,-2% )"' - +"' ,(.+ +"' , ,-2% )"' ,-2% )"' '( -!( , '( -!(, , , (%%-(+ &"--+ (%%-(+ ,-2% )"' - (%%-(+ &"--+ (%%-(+ POWERTAP II CASE 357C-03 ISSUE E -A- W R G & - & & N -B- Q H 2 PL F -T- C E U '(-, "&',"('"' ' -(%+'"' )+ '," 2& ('-+(%%"' "&',"(' "'! -+&"'% )'-+-"(' &1"&.& & - & "# & ! $ % & V http://onsemi.com 545 " ' .' , #!" ' .' , PACKAGE OUTLINE DIMENSIONS (continued) POWERTAP III CASE 357D-01 ISSUE A A Q '(-, "&',"('"' ' -(%+'"' )+ '," 2& ('-+(%%"' "&',"(' "'! -+&"'% )'-+-"(' &1"&.& B D N R L 2 PL RADIUS F H ! C " ' .' #!" ' .' E DPAK CASE 369A-13 ISSUE AA -T- C B V '(-, "&',"('"' ' -(%+'"' )+ '," 2& ('-+(%%"' "&',"(' "'! "# E R Z A S U K F J L H D G ,-2% )"' 2 PL , (%%-(+ &"--+ (%%-(+ & ,-2% )"' - +"' ,(.+ +"' ! " $ % ( " ' , , #!" ' , , ,-2% )"' '( -!( '( -!( ,-2% )"' -!( '( - '( http://onsemi.com 546 ,-2% )"' - '( -!( '( ,-2% )"' &- &- - &- PACKAGE OUTLINE DIMENSIONS (continued) SMC CASE 403-03 ISSUE B S A D '(-, "&',"('"' ' -(%+'"' )+ '," 2& ('-+(%%"' "&',"(' "'! "&',"(' ,!%% &,.+ 0"-!"' "&',"(' ) B C K P J #!" ' + H SMB D0-214AA CASE 403A-03 ISSUE D S A '(-, "&',"('"' ' -(%+'"' )+ '," 2& ('-+(%%"' "&',"(' "'! "&',"(' ,!%% &,.+ 0"-!"' "&',"(' ) D B C K " ' + " P J H http://onsemi.com 547 " ' + " #!" ' + PACKAGE OUTLINE DIMENSIONS (continued) SMB CASE 403B-01 ISSUE O S A '(-, "&',"('"' ' -(%+'"' )+ '," 2& ('-+(%%"' "&',"(' "'! D " B " ' #!" ' C H J K D2PAK CASE 418B-03 ISSUE D C E V -B- '(-, "&',"('"' ' -(%+'"' )+ '," 2& ('-+(%%"' "&',"(' "'! A S -T- "# " % K J G D 3 PL H & ,-2% )"' - & , (%%-(+ &"--+ (%%-(+ ,-2% )"' - +"' ,(.+ +"' ,-2% )"' http://onsemi.com 548 '( -!( '( -!( " ' , #!" ' , CHAPTER 10 AR598: Avalanche Capability of Today's Power Semiconductors http://onsemi.com 549 http://onsemi.com 550 7$.$0&+( $2$%,.,5: 1) 1'$:4 18(3 (/,&10'6&5134 http://onsemi.com R Borras, P Aloisi, D Shumate* ON Semiconductor, France, USA* Paper published at the EPE Conference '93, Brighton 9/93. ARTICLE REPRINT Abstract. Power semiconductors are used to switch high currents in fractions of a second and therefore belong inherently to a world of voltage spikes. To avoid unnecessary breakdown voltage guardbands, new generations of semiconductors are now avalanche rugged and characterized in avalanche energy. This characterization is often far from application conditions and thus quite useless to the designer. It is easy to verify that an energy rating is not the best approach to a ruggedness quantification because of avalanche energy fluctuations with test conditions. A physical and thermal analysis of the failure mechanisms leads to a new characterization method generating easy-to-use data for safe designs. The short-term avalanche capability will be discussed with an insight of the different technologies developed to meet these new ruggedness requirements. Keywords. Avalanche, breakdown, unclamped inductive switching energy, safe operating areas. INTRODUCTION One obvious trend for new power electronic designs is to work at very high switching frequencies in order to reduce the volume and weight of all the capacitive and inductive elements. The consequence is that most applications today require switching very high currents in fractions of a microsecond and therefore generate L x dI/dt voltage spikes due to parasitic inductance. Unfortunately these undesirable voltage levels sometimes reach the breakdown voltage of power semiconductors that are not intended to be used in avalanche. The necessity for avalanche rugged power semiconductors has clearly been perceived by many semiconductor manufacturers who have come up with avalanche-energy rated devices. This paper will show the limits of an energy-based characterization model. It will concentrate on three different devices: Ultra Fast recovery Rectifiers, Schottky Barrier Rectifiers and MOSFETs. It will study their main failure mechanisms and show the technological improvements that guarantee an enhanced ruggedness. This will lead to a new characterization that will help the designer choose correctly between overall cost and reliability. The energy is first stored in inductor L by turning on transistor Q for a period of time proportional to the peak current desired in the inductor. When Q is turned off, the inductor reverses its voltage and avalanches the Device Under Test until all its energy is transferred. The DUT can be a rectifier or a MOSFET (the gate should always be shorted to the source). VCC November, 2000 - Rev.1 BVR VCC L t IR IR Q VR DUT IC t Figure 1. Standard UIS Characterization Circuit. The standard characterization method consists in increasing the peak current in the inductor until the device fails. The energy that the device can sustain without failing becomes a figure of merit of the ruggedness to avalanche: Waval = 1/2 L Ipeak2 BV(DUT) / (BV(DUT) - VCC) LIMITS OF AN AVALANCHE ENERGY CHARACTERIZATION Practically all the characterizations are based on the following Unclamped Inductive Switching (UIS) test circuit (Fig 1). Semiconductor Components Industries, LLC, 2000 VR [1] The main limit of this method is that the energy level that causes a failure in the DUT is not a constant but a function of L and VCC. This results of the fact that the avalanche duration is function of the current decay slope (BV(DUT)-VCC)/L: 551 Publication Order Number: AR598/D AR598 Table 1. Peak Current and Energy Causing Failures in a 1 A, 1000 V Ultra Fast Recovery Rectifier. Inductor Value: Peak Current: Energy: 10 mH 1.7 A 14 mJ 50 mH 0.9 A 20 mJ many different parameters. If he knows the value of the parasitic inductance in his circuit he will be able to determine its maximum peak current. For instance, let us assume that the designer uses the 15 A, 60 V MOSFET characterized in Figure 2. This device sustains 500 mJ with an inductor of 75 mH according to equation [1]. Its typical breakdown voltage is 80 V. If the supply voltage VDD is 12 V and the parasitic inductance L is 250 H, then the avalanche duration and maximum peak current are related by 100 mH 0.8 A 32 mJ Table 1 indicates that the failure is not caused by an energy (i.e. it is not independent of the avalanche duration) but rather by a current level that has to be derated versus time: the devices can sustain a low current for a long period of time (high energy) but at high avalanche currents they will fail after a few microseconds (low energy). Therefore, unless the designer has a parasitic inductance of value L in his circuit, the standard characterization data will be useless, or worse, it might lead to an overestimate of the ruggedness of his application: because parasitic inductances are often an order of magnitude less than the test circuit inductance, the expected energy capability leads to excessive current levels. The UIS test circuit is very easy to implement: the only important point is that the transistor has to have a breakdown voltage higher than the DUT. For low breakdown voltage devices, a MOSFET might be preferred to the bipolar transistor. The advantages of using a MOSFET are multiple: it is a more rugged device, it is much easier to drive and its switching characteristics can be controlled by adding a resistor in series with the gate. It is mandatory to limit this switching speed to avoid having an avalanche energy measurement dependent on the gate drive (i.e. gate resistor and gate to source voltage values). Anyhow, it is possible to generate very useful information with this UIS test circuit by varying the inductor value. It is also very important to present the data independently of the values of VCC and L. One solution can be to plot the maximum peak current versus the avalanche duration (Fig 2): [2] Ipeak = t (BVDSS - VDD) / L This relationship can be added to Figure 2 (see Fig 3): Ipeak (A) 100 10 EQUATION 2 1 10 100 1000 t (s) 10,000 Figure 3. Figure 2 + equation [2]. Thus the maximum peak current that can flow through the parasitic inductance L is approximately 28 A instead of 58 A that would have resulted of using equation [1]. UNDERSTANDING THE FAILURE MECHANISMS Physical Approach The following microscope photographs show the failure locations for an Ultra Fast Recovery Rectifier (UFR), a Schottky Barrier Rectifier (SBR) and a MOSFET: Ipeak (A) 100 10 1 10 100 1000 t (s) 10,000 Figure 2. Maximum Peak Current versus Avalanche Duration for a 15 A, 60 V MOSFET in an UIS Test Circuit. The advantage of this new graph is that the designer can easily calculate the safety margin of his application and he will not be mislead by an energy value that depends on too Figure 4. 4 A, 1000 V UFR Avalanche Failure. http://onsemi.com 552 AR598 fail in the corners or on the sides whereas SBRs have randomly located failures. Thermal Approach Transient thermal response graphs generated by a standard VDS method show the junction temperature evolution for forward and avalanche constant current conduction in a MOSFET. These graphs (Fig 7) prove that the silicon efficiency during avalanche and forward currents are similar. TJ (C) 300 600 W FORWARD 200 Figure 5. 25 A, 35 V SBR Avalanche Failure. 800 W 400 W 200 W 100 0 10 100 1000 t (s) 10,000 Figure 7. 15 A, 60 V MOSFET Transient Thermal Response for 800 W, 400 W, 200 W Avalanche and 600 W Forward Conduction. Figure 7 can be used to generate a transient thermal resistance graph by plotting the temperature divided by the power: the four graphs should then normally match. Some slight differences show that the transient thermal resistance increases with the current level: i.e. the 800 W curve (10 A constant avalanche current) has a higher transient thermal resistance than the 200 W (2.5 A). Therefore the thermal efficiency in a MOSFET is not perfectly homogeneous versus the avalanche current. A similar analysis on an UFR or an SBR shows poor thermal efficiency in avalanche. This can be shown by comparing the temperature rise after 1 ms for forward and avalanche conduction pulses of same power (400 W): Figure 6. 20 A, 500 V MOSFET Avalanche Failure. These photographs show that the failure is generally a punchthrough. The melt-through hole dimensions depend on the current level and avalanche duration. A close look at the electrical characteristics of failed rectifiers on a curve tracer show three levels of degradation: low stressed diodes have a normal forward characteristic but show an unusual leakage current before entering breakdown as if they had a high-value resistor in parallel: this resistance can be explained by a small punchthrough. For medium degradation levels, the value of this pseudo-resistance decreases and becomes visible in the forward characteristic of the diode. Finally, when the punchthrough reaches considerable dimensions, the device looks very similar to a low value resistor. The failure does not always appear in the same region of the die. For instance, high voltage UFRs have their punch-through always located in a corner, MOSFETs often MOSFET Tdirect=160C Tavalanche=180C ratio=0.9 UFR Tdirect=120C Tavalanche=175C ratio=0.7 SBR Tdirect=100C Tavalanche=150C ratio=0.7 Electrical Approach Considering the transient thermal responses of a device, it is possible to simulate the instantaneous junction temperature for any sort of power pulse. http://onsemi.com 553 AR598 a device at a constant current and presenting the maximum current capability versus time: Conducting this simulation on the data generated by the UIS test it is possible to show that all the parts fail when they reach a "critical temperature" (Fig 8): VR TJ (C) 300 BVR IR 6 mH II U 200 t L VR I DUT IR L 130 H 1 mH 13 mH 75 mH t Figure 9. Constant Current Characterization Circuit. 100 0 10 100 1000 Different test circuits similar to Figure 9 have been proposed by Gauen (1) and Pshaenich (2). Some unexpected failures in MOSFETs suggest that the DUT should always be referenced to ground. Unlike UFRs and SBRs, MOSFETs react differently whether they are tied to ground or floating around a fluctuating voltage. Many floating transistors fail at very low stress levels probably due to capacitive coupled currents that turn-on the internal parasitic transistor. The test circuit shown in Figure 9 sets a constant avalanche current through the device until it fails, this duration can then be plotted for different current levels. This generates a graph similar to the UIS method, except that the current is constant instead of decreasing linearly. This leads to the definition of a "Safe Avalanching Area" (Fig 10) that will guarantee a short-term reliability if the device is used within this clearly defined area. t (s) 10,000 Figure 8. 15A, 60V MOSFET Failure Points and Critical Temperature for different Inductor Values. At these critical temperatures the intrinsic carrier concentration, ni, reaches levels close to those of the doping concentrations: ni is proportional to T3/2 e - Eg / 2kT [3] where T is the absolute temperature, Eg the energy bandgap and k is Boltzmann's constant. At 200C, ni exceeds 2 1014 cm-3 which corresponds to a 1000 V material epitaxy concentration level. This means that when the junction temperature reaches 300C, the rectifier looks more like a resistor than a diode. A local thermal runaway then generates a hot spot and a punchthrough as can be seen in Figures 4, 5 and 6. This failure analysis has shown that the failure mechanism is essentially thermal: the devices are heated by the BVR x IR power dissipation. Unfortunately, this power does not remain constant because the UIS circuit generates a linear current decay and also the breakdown voltage varies with the current level and with the junction temperature. In order to have a complete characterization of the device it is interesting to see how it reacts to a constant avalanche current and different ambient temperatures. IR (A) RECTANGULAR CURRENT PULSE TA = 25C 0.9 0.7 0.5 SAFE AVALANCHING AREA 0.3 0.1 NEW CHARACTERIZATION METHOD PROPOSAL During the prototype phase, it is easier for the designer to measure the avalanche current and duration than the circuit's parasitic inductance. Therefore, the characterization should be based on easy to measure parameters. The failure analysis proves that the main cause of degradation is the inability to handle an excessive power (avalanche current IR multiplied by breakdown voltage BVR). A proper characterization should present the maximum power capability versus time. As the avalanche voltage varies only slightly with the current level, the proposed method is based on avalanching 100 1000 10,000 t (s) 100,000 Figure 10. 1 A, 30 V SBR Save Avalanching Area. This graph gives the maximum avalanche duration for any value of avalanche current. The Safe Avalanching Area is generated by taking a safety margin from the failure points. Another approach would be to dynamically measure the temperature as in Figure 7 and generate an area defined by a maximum allowable junction temperature. http://onsemi.com 554 AR598 As the failure mechanism is related to a peak junction temperature, it is necessary to give Safe Avalanching Areas for different ambient temperatures (Fig 11): Relation [5] is a consequence of heat propagation laws which explain that the temperature in a semiconductor rises proportionally to t 0.5 (for a constant current pulse and as long as the temperature remains within the silicon die). This can be seen in any transient thermal resistance graph. A standard thermal calculation shows that: IR (A) 20 25C 15 or TJ = TA + PD RthJA(t), [6] PD = (TJ-TA) / RthJA(t) where: TJ, TA are the junction and ambient temperatures, PD is the power dissipation, RthJA(t) is the transient thermal resistance. Given a constant power pulse and for values of t less than 1 ms, [6] is equivalent to: 60C 10 100C 5 IR BVR = (TJ-TA) / ( k t 0.5 ) t (s) 0 0 500 1000 1500 so 2000 [7] IR = k t -0.5 Figure 11. 25 A, 35 V SBR Safe Avalanching Areas for different ambient temperatures. This relation is similar to [5]. For avalanche durations of less than 500 s the heat propagates within the silicon only. For longer durations the heat reaches the solder and the package so the propagation characteristics are modified. The devices heat faster or slower and therefore the IR=f(t) slope changes. Empirical data shows that A in relation [4] remains within -0.5 to -0.6. Relation [7] can also be expressed by: When the data in Figures 10 and 11 is plotted on log/log axes instead of lin/log or lin/lin, an interesting feature appears (Fig 12): IR (A) 100 IR2 t = k 25C 60C 100C 9A2 500 s = Ipeak2 100s t (s) 1 1000 This gives a conservative value of 20 A instead of a real value of 28 A whereas the 1/2 L I2 method generates a catastrophic 58 A value. 10,000 Figure 12. Figure 12 on log/log axes. Figure 12 shows a linear relationship between current and time on a log/log plot. This means that: so log(IR) = A log(t) + B, IR = k TA TECHNOLOGY TRADEOFFS Ultra Fast Recovery Rectifiers [4] The UFR devices are based on a Mesa technology (Fig 13) with a Phosphorus doped (n-type) substrate. The heavily doped N+ substrate is followed by a lighter N- epitaxial layer. The P+ is diffused into the epitaxy to form the P-N junction. The passivation follows the perimeter of the die. where k is a constant function of the die size, the breakdown voltage and other parameters. Constant A can be extracted from Figure 12 and similar figures for UFRs and MOSFETs: IR = k T -0.55 [7bis] This rule of thumb works out much better than the, unfortunately too common, 1/2 L I2 law. For example, when applied to the example following Figure 2 (which is UIS and not Constant Current generated) to determine the maximum peak current in a 250 H inductor and by choosing for instance the 9 A, 500 s point, relation [7bis] can be written: 10 100 (k:constant) [5] http://onsemi.com 555 AR598 PASSIVATION DOPING PROFILE EEEE P+ P+ P+ N- EPITAXY ELECTRIC FIELD BARRIER EEE N- EPITAXY GUARD RING P+ SiO2 N- N+ SUBSTRATE N+ SUBSTRATE N+ x Figure 13. UFR Technology, Profile and Electric Field. Figure 14. SBR Technology with P-N Guard Rings MOSFETs The epitaxy characteristics determine the major electrical parameters of the device. A designed experiment was conducted varying the epitaxy thickness and resistivity. The output responses were the forward voltage, the breakdown voltage, the leakage current and the avalanche capability. A wide range of epitaxy materials was chosen to determine the general trends for all the effects. Although the results were predictable for the static parameters, the avalanche capability results were not. A key issue is the electric field extension. If it terminates before the substrate the avalanche capability increases by increasing the epitaxy resistivity. If the field extends into the N+ region (reach-through) the avalanche capability is considerably reduced. The avalanche capability is proportional to the die size and not to the perimeter. This confirms that the avalanche current is vertical and not only a surface or passivation related phenomenon. The failures always occur in the corners where the electric field is most critical. These failures are essentially function of the thermal characteristics of the device when conducting avalanche currents. Therefore the avalanche capability decreases when the ambient temperature increases and the failures can normally be predicted by Safe Avalanching Areas such as Figure 12. Some unexpected defects though can radically degrade the avalanche capability. Defects in the epi such as pipes cause premature failures but can often be screened by a leakage current test that eliminates soft breakdown devices. Defects in the passivation can generate parasitic oscillations during breakdown. MOSFETs can also be compared to UFRs as long as the internal parasitic bipolar transistor (due to the P-tub) does not turn-on. The latest MOSFET generations reduce the P- resistance to avoid biasing this NPN. While analyzing different constant current test circuits, it appeared that devices used in a floating configuration can have very poor avalanche capabilities. Due to their cellular technology, MOSFETs conduct very efficiently avalanche currents. They can sustain avalanche power levels close to those of forward conduction ratings. CONCLUSION The necessity of characterizing the avalanche capability of power semiconductors has been explained. An analysis of the standard UIS test circuit has shown the limits of a characterization based on energy ratings. Throughout a discussion of the main failure mechanisms, a new thermal approach has been proposed to help designers set safety levels in their designs. This paper sets new standards for characterizing avalanche ruggedness. Acknowledgements The authors would like to thank Jean-Michel REYNES, design engineer at ON Semiconductor Toulouse, for his help in understanding the failure mechanisms. References 1. Gauen, K., 1987, "Specifying Power MOSFET Avalanche Stress Capability", Power Technics Magazine, January 2. Pshaenich, A., 1985, "Characterizing Overvoltage Transient Suppressors", Powerconversion International, June/July Schottky Rectifiers Due to P-N junction guard rings, SBR devices are very similar to UFRs when conducting avalanche currents. These rectifiers have very low breakdown voltages and therefore very thin epitaxy layers. This probably explains that the avalanche-related failures occur anywhere on the die surface: the thin N- region is relatively more heterogeneous with respect to avalanche capability and thermal dissipation than a thick UFR epitaxy. 3. Cherniak, S., "A Review of Transients and The Means of Suppression", ON Semiconductor Application Note AN843 4. Wilhardt, J., "Transient Power Capability of Zener Diodes", ON Semiconductor Application Note AN784 http://onsemi.com 556 CHAPTER 11 Index and Cross Reference http://onsemi.com 557 Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON Semiconductor part number differs from the industry part number, the ON Semiconductor device is a form, fit and function replacement for the industry type number - however, subtle differences in characteristics and/or specifications may exist. The part numbers listed in this Cross Reference are in computer sort. AAAAAA AAAAA AAAAAA AAAAAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAAAAAAA AAAAAA AAAAAAAA Industry Part Number 10BF10 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ030 10BQ040 10BQ060 10BQ100 10CTF10 10CTF20 10CTF30 10CTF40 10DL1 10DL2 10MQ040N 10TQ030 10TQ035 10TQ040 10TQ045 11DQ03 11DQ04 11DQ05 11DQ06 11DQ09 11DQ10 12CTQ030 12CTQ035 12CTQ035S 12CTQ040 12CTQ040S 12CTQ045 12CTQ045S 12CWQ03FN 12TQ035 12TQ035S 12TQ040 12TQ040S 12TQ045 12TQ045S 15CTQ035 15CTQ035S 15CTQ040 15CTQ040S 15CTQ045 15CTQ045S 180NQ035 181NQ035 ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MURS110T3 MURS120T3 MURS140T3 MURS160T3 MURS160T3 MBRS120T3 MBRS130T3 MBRS140T3 MBRS1100T3 MBRS1100T3 MUR840 MUR840 MUR840 MUR840 1N4934 1N4935 MBRA140T3 MBR1035 MBR1035 MBR1045 MBR1045 1N5818 1N5819 MBR150 MBR160 MBR1100 MBR1100 MBR1535CT MBR1535CT MBRB1545CT MBR1545CT MBRB1545CT MBR1545CT MBRB1545CT MBRD1035CTL MBR1635 MBRB1545CT MBR1645 MBRB1545CT MBR1645 MBRB1545CT MBR1535CT MBRB1545CT MBR1545CT MBRB1545CT MBR1545CT MBRB1545CT MBRP20035L MBRP20035L Industry Part Number Page 286 286 286 286 286 64 70 73 80 80 370 370 370 370 452 452 61 207 207 207 207 146 146 152 152 156 156 174 174 116 174 116 174 116 108 215 116 215 116 215 116 174 116 174 116 174 116 280 280 182NQ030 182NQ030R 1N2069,A 1N2070,A 1N2071,A 1N3611 1N3611GP 1N3612 1N3612GP 1N3613 1N3613GP 1N3614 1N3614GP 1N3957 1N3957GP 1N4001 1N4001GP 1N4002 1N4002GP 1N4003 1N4003GP 1N4004 1N4004GP 1N4005 1N4005GP 1N4006 1N4006GP 1N4007 1N4007GP 1N4245 1N4245GP 1N4246 1N4246GP 1N4247 1N4247GP 1N4248 1N4248GP 1N4249 1N4249GP 1N4383GP 1N4384GP 1N4385GP 1N4585GP 1N4586GP 1N4934 1N4934GP 1N4935 1N4935GP 1N4936 http://onsemi.com 558 ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MBRP20035L MBRP20035L 1N4003 1N4004 1N4005 1N4003 1N4003 1N4004 1N4004 1N4005 1N4005 1N4006 1N4006 1N4007 1N4007 1N4001 1N4001 1N4002 1N4002 1N4003 1N4003 1N4004 1N4004 1N4005 1N4005 1N4006 1N4006 1N4007 1N4007 1N4003 1N4003 1N4004 1N4004 1N4005 1N4005 1N4006 1N4006 1N4007 1N4007 1N4003RL 1N4004RL 1N4005RL 1N4006RL 1N4007RL 1N4934 1N4934 1N4935 1N4935 1N4936 Page 280 280 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 452 452 452 452 452 AAAAAA AAAAA AAAAAA AAAAAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAAAA AAAAA AAAAAA AAAAAAAA AA Industry Part Number 1N4936GP 1N4937 1N4937GP 1N4942 1N4942GP 1N4943 1N4944 1N4944GP 1N4945 1N4946 1N4946GP 1N5185 1N5185GP 1N5186 1N5186GP 1N5187 1N5187GP 1N5188 1N5188GP 1N5189 1N5189GP 1N5190 1N5190GP 1N5391 1N5391GP 1N5391S 1N5392 1N5392GP 1N5392S 1N5393 1N5393GP 1N5393S 1N5394 1N5394GP 1N5395 1N5395GP 1N5395S 1N5396 1N5396GP 1N5397 1N5397GP 1N5397S 1N5398 1N5398GP 1N5398S 1N5399 1N5399GP 1N5399S 1N5401 1N5402 1N5403 1N5404 1N5405 1N5406 1N5415 1N5416 ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement 1N4936 1N4937 1N4937 1N4935 1N4935 1N4936 1N4936 1N4936 1N4937 1N4937 1N4937 MR852 MR852 MR852 MR852 MR852 MR852 MR856 MR856 MR856 MR856 MR856 MR856 1N4001RL 1N4001RL 1N4001RL 1N4002RL 1N4002RL 1N4002RL 1N4003RL 1N4003RL 1N4003RL 1N4004RL 1N4004RL 1N4004RL 1N4004RL 1N4004RL 1N4005RL 1N4005RL 1N4005RL 1N4005RL 1N4005RL 1N4006RL 1N4006RL 1N4006RL 1N4007RL 1N4007RL 1N4007RL 1N5401 1N5402 1N5404 1N5404 1N5406 1N5406 MR852 MR852 Industry Part Number Page 452 452 452 452 452 452 452 452 452 452 452 454 454 454 454 454 454 454 454 454 454 454 454 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 449 449 449 449 449 449 454 454 1N5417 1N5418 1N5419 1N5420 1N5614 1N5615 1N5615GP 1N5616 1N5617 1N5617GP 1N5618 1N5619 1N5619GP 1N5620 1N5802 1N5803 1N5804 1N5805 1N5806 1N5807 1N5808 1N5809 1N5810 1N5811 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 200CNQ020 200CNQ030 200CNQ035 200CNQ040 200CNQ045 201CNQ020 201CNQ030 201CNQ035 201CNQ040 201CNQ045 208CMQ060 208CNQ060 20CTQ030 20CTQ035 20CTQ040 20CTQ045 21DQ03 21DQ04 220CNQ030 25CTQ035 25CTQ035S 25CTQ040 25CTQ040S 25CTQ045 25CTQ045S 28CPQ030 http://onsemi.com 559 ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MR852 MR856 MR856 MR856 1N4003 1N4935 1N4935 1N4004 1N4936 1N4936 1N4005 1N4937 1N4937 1N4006 MUR420 MUR420 MUR420 MUR420 MUR420 MUR420 MUR420 MUR420 MUR420 MUR420 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 MBRP20030CTL MBRP20030CTL MBRP20030CTL MBRP20045CT MBRP20045CT MBRP20030CTL MBRP20030CTL MBRP20030CTL MBRP20045CT MBRP20045CT MBRP20060CT MBRP20060CT MBR2030CTL MBR2030CTL MBR2045CT MBR2045CT 1N5821 1N5822 MBRP20030CTL MBR2535CTL MBRB2535CTL MBR2545CT MBRB2545CT MBR2545CT MBRB2545CT MBR3045PT Page 454 454 454 454 447 452 452 447 452 452 447 452 452 447 350 350 350 350 350 350 350 350 350 350 146 146 146 159 159 159 252 252 252 262 262 252 252 252 262 262 270 270 180 180 184 184 159 159 252 195 127 198 130 198 130 232 AAAAAA AAAAA AAAAAA AAAAAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAAAA AAAAA AAAAAA AAAAAAAA AA Industry Part Number 28CPQ040 301CNQ040 301CNQ045 301CNQ050 30BF20 30BF40 30BF60 30BQ015 30BQ040 30BQ060 30CPQ035 30CPQ040 30CPQ045 30CPQ050 30CTQ030 30CTQ035 30CTQ035S 30CTQ040 30CTQ040S 30CTQ045 30CTQ045S 30CTQ050 30CTQ050S 30DL1 30DL2 30WQ03FN 30WQ04FN 30WQ06FN 31DQ03 31DQ04 31DQ05 31DQ06 31DQ09 31DQ10 32CTQ030 32CTQ030S 400CNQ040 400CNQ045 400DMQ045 401CMQ045 401CNQ040 401CNQ045 403CMQ100 403CNQ100 40CPQ035 40CPQ040 40CPQ045 40D1 40D2 40D4 40D6 40D8 40L15CQ 40L40CW 40L45CW 42CTQ030S ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MBR3045PT MBRP30045CT MBRP30045CT MBRP30060CT MURS320T3 MURS340T3 MURS360T3 MBRS320T3 MBRS340T3 MBRS360T3 MBR3045WT MBR3045WT MBR3045WT MBR3045WT MBR2545CT MBR2535CTL MBRB2535CTL MBR2545CT MBRB2545CT MBR2545CT MBRB2545CT MBR2545CT MBRB2545CT MR852 MR852 MBRD330T4 MBRD350T4 MBRD360T4 1N5821 1N5822 MBR350 MBR360 MBR3100 MBR3100 MBR2535CTL MBRB3030CT MBRP40045CTL MBRP40045CTL MBRP40045CTL MBRP40045CTL MBRP40045CTL MBRP40045CTL MBRP400100CTL MBRP400100CTL MBR4045WT MBR4045WT MBR4045WT MR754 MR754 MR754 MR760 MR760 MBR4015LWT MBR4045WT MBR4045WT MBRB4030 Industry Part Number Page 232 265 265 275 299 299 299 94 94 94 241 241 241 241 198 195 127 198 130 198 130 198 130 454 454 97 97 97 159 159 168 168 171 171 195 132 268 268 268 268 268 268 278 278 248 248 248 484 484 484 484 484 244 248 248 142 50WQ03FN 50WQ04FN 50WQ06FN 6A05 6A1 6A10 6A2 6A4 6A6 6A8 6CWQ03FN 6CWQ04FN 6CWQ06FN 6TQ035 6TQ040 6TQ045 72CPQ030 8TQ080 8TQ100 A114A A114B A114C A114D A114E A114F A114M A115A A115B A115C A115D A115E A115F A115M A14A A14C A14D A14E A14F A14M A14N A14P AR25A AR25B AR25D AR25G AR25J AR25K AR25M ARS25A ARS25B ARS25D ARS25G ARS25J ARS25K ARS25M B0520LW http://onsemi.com 560 ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MBRD630CTT4 MBRD650CTT4 MBRD660CTT4 MR754 MR754 MR760 MR754 MR754 MR760 MR760 MBRD630CTT4 MBRD650CTT4 MBRD660CTT4 MBR735 MBR745 MBR745 MBR7030WT MBR1090 MBR10100 1N4934 1N4935 1N4936 1N4936 1N4937 1N4933 1N4937 MR852 MR852 MR856 MR856 MR856 MR852 MR856 1N4002 1N4004 1N4004 1N4005 1N4001 1N4005 1N4006 1N4007 MR2504 MR2504 MR2504 MR2504 MR2510 MR2510 MR2510 MR2504 MR2504 MR2504 MR2504 MR2510 MR2510 MR2510 MBR0520LT1,T3 Page 101 101 101 484 484 484 484 484 484 484 101 101 101 204 204 204 NA 212 212 452 452 452 452 452 452 452 454 454 454 454 454 454 454 447 447 447 447 447 447 447 447 463 463 463 463 463 463 463 463 463 463 463 463 463 463 28 AAAAAA AAAAA AAAAAA AAAAAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAAAA AAAAA AAAAAA AAAAAAAA AA Industry Part Number B0520W B0530W B0540W B1100B B1100LB B120 B120B B130 B130B B140 B140B B150 B150B B160 B160B B170B B180B B190B B220A B230A B240 B240A B250 B250A B260 B260A B320 B320A B330 B330A B340 B340A B340B B350 B350A B350B B360 B360A B360B B520C B530C B540C B550C B560C BA157 BA158 BY229-200 BY229-400 BY229-600 BYP21-100 BYP21-150 BYP21-200 BYP21-50 BYP22-100 BYP22-150 BYP22-200 ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MBR0520LT1,T3 MBR0530T1,T3 MBR0540T1,T3 MBRS1100T3 MBRS1100T3 MBRA130LT3 MBRS120T3 MBRA130LT3 MBRS130LT3 MBRA140T3 MBRS140LT3 MBRA140T3 MBRS140T3 MBRA140T3 MBRS1100T3 MBRS1100T3 MBRS1100T3 MBRS1100T3 MBRA130LT3 MBRA130LT3 MBRS240LT3 MBRA130LT3 MBRS240LT3 MBRA140T3 MBRS1100T3 MBRA140T3 MBRS320T3 MBRA130LT3 MBRS330T3 MBRA130LT3 MBRS340T3 MBRA140T3 MBRS240LT3 MBRS360T3 MBRA140T3 MBRS240LT3 MBRS360T3 MBRA140T3 MBRS1100T3 MBRS320T3 MBRS330T3 MBRS340T3 MBRS360T3 MBRS360T3 1N4936RL 1N4937RL MUR820 MUR840 MUR860 MUR820 MUR820 MUR820 MUR820 MUR3020PT MUR3020PT MUR3020PT Industry Part Number Page 28 31 34 80 80 58 64 58 67 61 76 61 73 61 80 80 80 80 58 58 87 58 87 61 80 61 94 58 94 58 94 61 87 94 61 87 94 61 80 94 94 94 94 94 452 452 370 370 370 370 370 370 370 425 425 425 BYP22-50 BY251GP BY252GP BY253GP BY254GP BYQ28-100 BYQ28-150 BYQ28-200 BYQ28-50 BYR29-600 BYS92-40 BYS92-45 BYS92-50 BYS93-40 BYS93-45 BYS93-50 BYS95-40 BYS95-45 BYS95-50 BYS97-40 BYS97-45 BYS97-50 BYS98-40 BYS98-45 BYS98-50 BYT08P-1000 BYT08P-400 BYT12P-1000 BYT28-300 BYT28-400 BYT28-500 BYT6P-400 BYT79-300 BYT79-400 BYT79-500 BYV18-35 BYV18-45 BYV19-35 BYV19-45 BYV26A BYV26B BYV26C BYV27-100 BYV27-150 BYV27-50 BYV28-100 BYV28-150 BYV28-50 BYV29-300 BYV29-400 BYV29-500 BYV32-100 BYV32-150 BYV32-200 BYV32-50 BYV33-35 http://onsemi.com 561 ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MUR3020PT 1N5402RL 1N5404RL 1N5406RL 1N5407RL MUR1620CT MUR1620CT MUR1620CT MUR1620CT MUR860 MBRP20045CT MBRP20045CT MBRP20060CT MBRP30045CT MBRP30045CT MBRP30060CT MBRP20045CT MBRP20045CT MBRP20060CT MBRP20045CT MBRP20045CT MBRP20060CT MBRP20045CT MBRP20045CT MBR1545CT MUR8100E MUR840 MUR10120E MUR1660CT MUR1660CT MUR1660CT MUR1640CT MUR1560 MUR1560 MUR1560 MBR1545CT MBR1545CT MBR1045 MBR1045 MUR120 MUR140 MUR160 MUR120 MUR120 MUR120 MUR420 MUR420 MBR2045CT MUR1560 MUR1560 MUR1560 MUR1620CT MUR1620CT MUR1620CT MUR1620CT MBR2045CT Page 425 449 449 449 449 402 402 402 402 370 262 262 270 265 265 275 262 262 270 262 262 270 262 262 174 376 370 387 402 402 402 402 393 393 393 174 174 207 207 324 324 324 324 324 324 350 350 184 393 393 393 402 402 402 402 184 AAAAAA AAAAA AAAAAA AAAAAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAAAA AAAAA AAAAAA AAAAAAAA AA Industry Part Number BYV33-40 BYV33-45 BYV39-35 BYV39-40 BYV39-45 BYV43-35 BYV43-40 BYV43-45 BYVB32-100 BYVB32-150 BYVB32-200 BYVB32-50 BYW29-100 BYW29-150 BYW29-200 BYW29-50 BYW4200B BYW51-200 BYW51F-200 BYW80-100 BYW80-150 BYW80-200 BYW80-50 BYW81P-200 BYW98-200 BYW99W-200 CPT12035 CPT12045 CPT12050 CPT20035 CPT20045 CPT20050 CPT20120 CPT20125 CPT30035 CPT30045 CPT30050 EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G EGP10J EGP10K EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G EGP20J EGP20K EGP30A EGP30B EGP30C ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MBR2045CT MBR2045CT MBR1645 MBR1645 MBR1645 MBR2545CT MBR2545CT MBR2545CT MURB1620CT MURB1620CT MURB1620CT MURB1620CT MUR820 MUR820 MUR820 MUR820 MURD620CT MUR1620CT MURF1620CT MUR820 MUR820 MUR820 MUR820 MUR1520 MUR420 MUR3020WT MBRP20045CT MBRP20045CT MBRP20060CT MBRP20045CT MBRP20045CT MBRP20060CT MBRP20030CTL MBRP20030CTL MBRP30045CT MBRP30045CT MBRP30060CT MUR120 MUR120 MUR120 MUR120 MUR160 MUR160 MUR160 MUR180E MUR420 MUR420 MUR420 MUR420 MUR460 MUR460 MUR460 MUR480E MUR420 MUR420 MUR420 Industry Part Number Page 184 184 215 215 215 198 198 198 313 313 313 313 370 370 370 370 306 402 411 370 370 370 370 393 350 431 262 262 270 262 262 270 252 252 265 265 275 324 324 324 324 324 324 324 329 350 350 350 350 350 350 350 355 350 350 350 EGP30D EGP30F EGP30G EGP30J EGP30K EGP50A EGP50B EGP50C EGP50D ERA81 ERB35 ERB44 ERB91 ERC24 ERC38 ERC62 ERC80 ERC90 ERC91 ES1A ES1B ES1C ES1D ES1G ES2A ES2AA ES2B ES2BA ES2C ES2CA ES2D ES2DA ES2F ES2G ES3A ES3AB ES3B ES3BB ES3C ES3CB ES3D ES3DB ES3F ES3G ESAB33 ESAB82 ESAB92 ESAC33 ESAC82 ESAC92 ESAC93 ESAD33 FE16A FE16B FE16C FE16D http://onsemi.com 562 ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MUR420 MUR460 MUR460 MUR460 MUR480E MUR420 MUR420 MUR420 MUR420 1N5819 MUR120 1N4935 MUR120 1N4936 MUR140 MBR1045 MBR745 MUR820 MUR420 MRA4003T3 MRA4003T3 MRA4003T3 MRA4003T3 MRA4004T3 MURS105T3 MRA4003T3 MURS110T3 MRA4003T3 MURS115T3 MRA4003T3 MURS120T3 MRA4003T3 MURS140T3 MURS140T3 MURS320T3 MURS105T3 MURS320T3 MURS110T3 MURS320T3 MURS115T3 MURS320T3 MURS120T3 MURS340T3 MURS340T3 MUR820 MBR745 MUR820 MUR820 MBR1045 MUR1520 MUR3020PT MUR3040PT MUR1620CT MUR1620CT MUR1620CT MUR1620CT Page 350 350 350 350 355 350 350 350 350 146 324 452 324 452 324 207 204 370 350 456 456 456 456 456 286 456 286 456 286 456 286 456 286 286 299 286 299 286 299 286 299 286 299 299 370 204 370 370 207 393 425 425 402 402 402 402 AAAAAA AAAAA AAAAAA AAAAAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAAAA AAAAA AAAAAA AAAAAAAA AA Industry Part Number FE16F FE16G FE1A FE1B FE1C FE1D FE2A FE2B FE2C FE2D FE3A FE3B FE3C FE3D FE5A FE5B FE5C FE5D FE6A FE6B FE6C FE6D FE8A FE8B FE8C FE8D FE8F FE8G FEP16AT FEP16BT FEP16CT FEP16DT FEP16FT FEP16GT FEP16HT FEP16JT FEP30AP FEP30BP FEP30CP FEP30DP FEP30FP FEP30GP FEP30HP FEP30JP FEP6AT FEP6BT FEP6CT FEP6DT FEPB16AT FEPB16BT FEPB16CT FEPB16DT FES16AT FES16BT FES16CT FES16DT ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MUR1660CT MUR1660CT MUR120 MUR120 MUR120 MUR120 MUR420 MUR420 MUR420 MUR420 MUR420 MUR420 MUR420 MUR420 MUR420 MUR420 MUR420 MUR420 MUR420 MUR420 MUR420 MUR420 MUR420 MUR820 MUR820 MUR820 MUR840 MUR840 MUR1620CT MUR1620CT MUR1620CT MUR1620CT MUR1640CT MUR1640CT MUR1660CT MUR1660CT MUR3020WT MUR3020WT MUR3020WT MUR3020WT MUR3060WT MUR3060WT MUR3060WT MUR3060WT MUR620CT MUR620CT MUR620CT MUR620CT MURB1620CT MURB1620CT MURB1620CT MURB1620CT MUR1520 MUR1520 MUR1520 MUR1520 Industry Part Number Page 402 402 324 324 324 324 350 350 350 350 350 350 350 350 350 350 350 350 350 350 350 350 350 370 370 370 370 370 402 402 402 402 402 402 402 402 431 431 431 431 431 431 431 431 363 363 363 363 313 313 313 313 393 393 393 393 FES16FT FES16GT FES16HT FES16JT FES8AT FES8BT FES8CT FES8DT FES8FT FES8GT FES8HT FES8JT FESB16AT FESB16BT FESB16CT FESB16DT FM120 FM130 FM140 FM5817 FM5818 FM5819 FR061 FR061L FR062 FR062L FR063 FR063L FR064 FR065 FR065L FR065L FR101 FR102 FR103 FR104 FR105 FR251 FR252 FR253 FR254 FR255 FR301 FR302 FR303 FR304 FR305 FRM3205CC FRM3210CC FRM3215CC FRM3220CC FRP1605CC FRP1610CC FRP1615CC FRP1620CC FRP805 http://onsemi.com 563 ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MUR1540 MUR1540 MUR1560 MUR1560 MUR820 MUR820 MUR820 MUR820 MUR840 MUR840 MUR860 MUR860 MURB1620CT MURB1620CT MURB1620CT MURB1620CT MBRA130LT3 MBRA130LT3 MBRA140T3 MBRA130LT3 MBRA130LT3 MBRA140T3 1N4933 1N4933 1N4934 1N4934 1N4935 1N4935 1N4936 1N4937 1N4936 1N4937 1N4933 1N4934 1N4935 1N4936 1N4937 MR852 MR852 MR852 MR856 MR856 MR852 MR852 MR852 MR856 MR856 MUR3020PT MUR3020PT MUR3020PT MUR3020PT MUR1620CT MUR1620CT MUR1620CT MUR1620CT MUR820 Page 393 393 393 393 370 370 370 370 370 370 370 370 313 313 313 313 58 58 61 58 58 61 452 452 452 452 452 452 452 452 452 452 452 452 452 452 452 454 454 454 454 454 454 454 454 454 454 425 425 425 425 402 402 402 402 370 AAAAAA AAAAA AAAAAA AAAAAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAAAA AAAAA AAAAAA AAAAAAAA AA Industry Part Number FRP810 FRP815 FRP820 FST1240 FST1245 FST1540 FST1545 FST20035 FST20040 FST20045 FST20050 FST2040 FST2045 FST2050 FST30035 FST30040 FST30045 FST30050 FST3040 FST3045 FST6035 FST6040 FST6045 FST6050 GER4001 GER4002 GER4003 GER4004 GER4005 GER4006 GER4007 GI1001 GI1002 GI1003 GI1004 GI1101 GI1102 GI1103 GI1104 GI1301 GI1302 GI1303 GI1304 GI1401 GI1402 GI1403 GI1404 GI2401 GI2402 GI2403 GI2404 GI2500 GI2501 GI2502 GI2504 GI2506 ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MUR820 MUR820 MUR820 MBR1545CT MBR1545CT MBR1545CT MBR1545CT MBRP20045CT MBRP20045CT MBRP20045CT MBRP20060CT MBR2045CT MBR2045CT MBR2060CT MBRP30045CT MBRP30045CT MBRP30045CT MBRP30060CT MBR2545CT MBR2545CT MBRP20045CT MBRP20045CT MBRP20045CT MBRP20060CT 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 MUR120 MUR120 MUR120 MUR120 MUR420 MUR420 MUR420 MUR420 MUR420 MUR420 MUR420 MUR420 MUR820 MUR820 MUR820 MUR820 MUR1620CT MUR1620CT MUR1620CT MUR1620CT MR2504 MR2504 MR2504 MR2504 MR2510 Industry Part Number Page 370 370 370 174 174 174 174 262 262 262 270 184 184 189 265 265 265 275 198 198 262 262 262 270 447 447 447 447 447 447 447 324 324 324 324 350 350 350 350 350 350 350 350 370 370 370 370 402 402 402 402 463 463 463 463 463 GI2508 GI2510 GI500 GI501 GI502 GI504 GI506 GI508 GI510 GI750 GI751 GI752 GI754 GI756 GI758 GI810 GI811 GI812 GI814 GI816 GI850 GI851 GI852 GI854 GI856 GIB2401 GIB2402 GIB2403 GIB2404 GP08A GP08B GP08D GP08G GP08J GP10A GP10B GP10D GP10G GP10J GP10K GP10M GP15A GP15B GP15D GP15G GP15J GP15K GP15M GP30A GP30B GP30D GP30G GP30J GP30K GP30M GP80A http://onsemi.com 564 ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MR2510 MR2510 1N5400RL 1N5401RL 1N5402RL 1N5404RL 1N5406RL 1N5407RL 1N5408RL MR754 MR754 MR754 MR754 MR760 MR760 1N4933RL 1N4934RL 1N4935RL 1N4936RL 1N4937RL MR852 MR852 MR852 MR856 MR856 MURB1620CT MURB1620CT MURB1620CT MURB1620CT 1N4001RL 1N4002RL 1N4003RL 1N4004RL 1N4005RL 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4001RL 1N4002RL 1N4003RL 1N4004RL 1N4005RL 1N4006RL 1N4007RL 1N5400RL 1N5401RL 1N5402RL 1N5404RL 1N5406RL 1N5407RL 1N5408RL MUR820 Page 463 463 449 449 449 449 449 449 449 484 484 484 484 484 484 452 452 452 452 452 454 454 454 454 454 313 313 313 313 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 449 449 449 449 449 449 449 370 AAAAAA AAAAA AAAAAA AAAAAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAAAA AAAAA AAAAAA AAAAAAAA AA Industry Part Number GP80B GP80D GP80G GP80J HER101 HER102 HER103 HER104 HER105 HER151 HER152 HER153 HER154 HER155 HER301 HER302 HER303 HER801 HER802 HER803 HER804 HER805 HFA15TB60 HFA16TA60C HFA200MD40C HFA200MD40D HFA30PA60C LT2A01 LT2A02 LT2A03 LT2A04 LT2A05 LT2A06 LT2A07 M100A M100B M100D M100G M100J M100K M100M MBR0520L MBR0540 MBR10100 MBR1030 MBR1030CT MBR1035 MBR1035CT MBR1040 MBR1040CT MBR1045 MBR1045CT MBR1050 MBR1050 MBR1050 MBR1060 ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MUR820 MUR820 MUR840 MUR860 MUR120 MUR120 MUR120 MUR140 MUR140 MUR120 MUR120 MUR120 MUR140 MUR140 MUR420 MUR420 MUR420 MUR820 MUR820 MUR820 MUR840 MUR840 MUR1560 MUR1660CT MURP20040CT MURP20040CT MUR3060WT 1N5400RL 1N5401RL 1N5402RL 1N5404RL 1N5406RL 1N5407RL 1N5408RL 1N4001RL 1N4002RL 1N4003RL 1N4004RL 1N4005RL 1N4006RL 1N4007RL MBR0520LT1,T3 MBR0540T1,T3 MBR10100 MBR1035 MBR1535CT MBR1035 MBR1535CT MBR1045 MBR1545CT MBR1045 MBR1545CT MBR1060 MBR1060 MBR1060 MBR1060 Page Industry Part Number 370 370 370 370 324 324 324 324 324 324 324 324 324 324 350 350 350 370 370 370 370 370 393 402 436 436 431 449 449 449 449 449 449 449 447 447 447 447 447 447 447 28 34 212 207 174 207 174 207 174 207 174 212 212 212 212 MBR1070 MBR1080 MBR1090 MBR1100 MBR12035CT MBR12045CT MBR12050CT MBR12060CT MBR150 MBR1535CT MBR1540CT MBR1545CT MBR1550CT MBR1560CT MBR160 MBR1630 MBR1635 MBR1640 MBR1645 MBR1650 MBR170 MBR180 MBR190 MBR20015CTL MBR20020CTL MBR20025CTL MBR20030CTL MBR20035CT MBR20045CT MBR20050CT MBR20060CT MBR20100CT MBR2015CTL MBR20200CT MBR2030CTL MBR2035CT MBR2040CT MBR2045CT MBR2050CT MBR2060CT MBR2070CT MBR2080CT MBR2090CT MBR2535CT MBR2535CTL MBR2545CT MBR2550CT MBR30035CT MBR30045CT MBR30050CT MBR30060CT MBR3035CT MBR3035PT MBR3035WT MBR3040PT MBR3045CT http://onsemi.com 565 ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MBR1100 MBR1100 MBR1100 MBR1100 MBRP20045CT MBRP20045CT MBRP20060CT MBRP20060CT MBR160 MBR1535CT MBR1545CT MBR1545CT MBR1545CT MBR2060CT MBR160 MBR1635 MBR1635 MBR1645 MBR1645 MBR1645 MBR1100 MBR1100 MBR1100 MBRP20030CTL MBRP20030CTL MBRP20030CTL MBRP20030CTL MBRP20045CT MBRP20045CT MBRP20060CT MBRP20060CT MBR20100CT MBR2030CTL MBR20200CT MBR2030CTL MBR2045CT MBR2045CT MBR2045CT MBR2060CT MBR2060CT MBR2080CT MBR2080CT MBR2090CT MBR2545CT MBR2535CTL MBR2545CT MBR2545CT MBRP30045CT MBRP30045CT MBRP30060CT MBRP30060CT MBR2535CTL MBR3045PT MBR3045WT MBR3045PT MBR2545CT Page 156 156 156 156 262 262 270 270 152 174 174 174 174 189 152 215 215 215 215 215 156 156 156 252 252 252 252 262 262 270 270 189 180 192 180 184 184 184 189 189 189 189 189 198 195 198 198 265 265 275 275 195 232 241 232 198 AAAAAA AAAAA AAAAAA AAAAAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAAAA AAAAA AAAAAA AAAAAAAA AA Industry Part Number MBR3045PT MBR3045WT MBR3050PT MBR3100 MBR320 MBR330 MBR340 MBR350 MBR360 MBR370 MBR380 MBR390 MBR4030PT MBR4035PT MBR4045PT MBR4045WT MBR4050PT MBR5025L MBR60035CTL MBR6030PT MBR6035PT MBR6040PT MBR6045PT MBR6045WT MBR730 MBR735 MBR740 MBR745 MBR750 MBRA130LT3 MBRA140T3 MBRB1035 MBRB1045 MBRB1050 MBRB1530CT MBRB1535CT MBRB1540CT MBRB1545CT MBRB1550CT MBRB1635 MBRB1645 MBRB1650 MBRB20100CT MBRB2035CT MBRB2045CT MBRB2050CT MBRB2060CT MBRB2080CT MBRB2090CT MBRB2515L MBRB2535CTL MBRB2545CT MBRB3035CT MBRB3045CT MBRD320 MBRD330 ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MBR3045PT MBR3045WT MBR3045PT MBR3100 MBR340 MBR340 MBR340 MBR360 MBR360 MBR3100 MBR3100 MBR3100 MBR4045PT MBR4045PT MBR4045PT MBR4045WT MBR4045PT MBR5025L MBRP60035CTL MBR6045PT MBR6045PT MBR6045PT MBR6045PT MBR6045WT MBR735 MBR735 MBR745 MBR745 MBR745 MBRA130LT3 MBRA140T3 MBRB1545CT MBRB1545CT MBRB1545CT MBRB1545CT MBRB1545CT MBRB1545CT MBRB1545CT MBRB1545CT MBRB1545CT MBRB1545CT MBRB1545CT MBRB20100CT MBRB2535CTL MBRB2545CT MBRB2545CT MBRB2060CT MBRB20100CT MBRB20100CT MBRB2515L MBRB2535CTL MBRB2545CT MBRB3030CT MBRB2545CT MBRD340 MBRD340 Page Industry Part Number 232 241 232 171 165 165 165 168 168 171 171 171 235 235 235 248 235 239 259 237 237 237 237 250 204 204 204 204 204 58 61 116 116 116 116 116 116 116 116 116 116 116 120 127 130 130 118 120 120 125 127 130 132 130 97 97 MBRD340 MBRD350 MBRD360 MBRD620CT MBRD630CT MBRD640CT MBRD650CT MBRD660CT MBRF20100CT MBRF2035CT MBRF2045CT MBRF2050CT MBRF2060CT MBRF2090CT MBRF2535CT MBRF2545CT MBRF2550CT MBRM120LT3 MBRM130LT3 MBRM140T3 MBRS1100T3 MBRS130LT3 MBRS140T3 MBRS320 MBRS340 MBRS340T3 MR2500 MR2501 MR2502 MR2504 MR2506 MR2508 MR2510 MR2535L MR750 MR751 MR752 MR754 MR756 MR758 MR760 MR850 MR851 MR852 MR854 MR856 MUR10005CT MUR10010CT MUR10015CT MUR10020CT MUR10120E MUR10150E MUR105 MUR110 MUR1100E MUR115 http://onsemi.com 566 ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MBRD340 MBRD360 MBRD360 MBRD640CT MBRD640CT MBRD640CT MBRD660CT MBRD660CT MBRF20100CT MBRF2545CT MBRF2545CT MBRF2545CT MBRF20100CT MBRF20100CT MBRF2545CT MBRF2545CT MBRF2545CT MBRM120LT3 MBRM130LT3 MBRM140T3 MBRS1100T3 MBRS130LT3 MBRS140T3 MBRS320T3 MBRS340T3 MBRS340T3 MR2504 MR2504 MR2504 MR2504 MR2510 MR2510 MR2510 MR2535L MR754 MR754 MR754 MR754 MR760 MR760 MR760 MR852 MR852 MR852 MR856 MR856 MURP20020CT MURP20020CT MURP20020CT MURP20020CT MUR10120E MUR10150E MUR120 MUR120 MUR1100E MUR120 Page 97 97 97 101 101 101 101 101 223 229 229 229 223 223 229 229 229 43 48 53 80 67 73 94 94 94 463 463 463 463 463 463 463 501 484 484 484 484 484 484 484 454 454 454 454 454 436 436 436 436 387 390 324 324 329 324 AAAAAA AAAAA AAAAAA AAAAAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAAAA AAAAA AAAAAA AAAAAAAA AA Industry Part Number MUR120 MUR130 MUR140 MUR150 MUR1505 MUR1510 MUR1515 MUR1520 MUR1530 MUR1540 MUR1550 MUR1560 MUR160 MUR1605CT MUR1605CTR MUR1610CT MUR1610CTR MUR1615CT MUR1615CTR MUR1620CT MUR1620CTR MUR1630CT MUR1640CT MUR1650CT MUR1660CT MUR170E MUR180E MUR190E MUR20005CT MUR20010CT MUR20015CT MUR20020CT MUR20030CT MUR20040CT MUR3005PT MUR3010PT MUR3015PT MUR3020PT MUR3020WT MUR3030PT MUR3040 MUR3040PT MUR3050PT MUR3060PT MUR3060WT MUR405 MUR410 MUR4100E MUR415 MUR420 MUR440 MUR450 MUR460 MUR470E MUR480E MUR490E ON Semiconductor Nearest Replacement MUR120 MUR140 MUR160 MUR160 MUR1520 MUR1520 MUR1520 MUR1520 MUR1540 MUR1540 MUR1560 MUR1560 MUR160 MUR1620CT MUR1620CTR MUR1620CT MUR1620CTR MUR1620CT MUR1620CTR MUR1620CT MUR1620CTR MUR1640CT MUR1640CT MUR1660CT MUR1660CT MUR1100E MUR1100E MUR1100E MURP20020CT MURP20020CT MURP20020CT MURP20020CT MURP20040CT MURP20040CT MUR3020PT MUR3020PT MUR3020PT MUR3020PT MUR3020WT MUR3040PT MUR3040 MUR3040PT MUR3060PT MUR3060PT MUR3060WT MUR420 MUR420 MUR4100E MUR420 MUR420 MUR460 MUR460 MUR460 MUR4100E MUR4100E MUR4100E ON Semiconductor Similar Replacement Industry Part Number Page 324 324 324 324 393 393 393 393 393 393 393 393 324 402 408 402 408 402 408 402 408 402 402 402 402 329 329 329 436 436 436 436 436 436 425 425 425 425 431 425 419 425 425 425 431 350 350 355 350 350 350 350 350 355 355 355 MUR5150E MUR6020 MUR6030 MUR6040 MUR605CT MUR610CT MUR615CT MUR620CT MUR805 MUR810 MUR8100E MUR815 MUR820 MUR830 MUR840 MUR850 MUR860 MUR870E MUR880E MUR890E MURB1610CT MURB1620CT MURD305 MURD310 MURD315 MURD320 MURD605CT MURD610CT MURD615CT MURD620CT MURH840CT MURH860CT MURHB840CT MURS120T3 MURS140 MURS160 MURS160T3 MURS320T3 MURS360T3 P300A P300B P300D P300G P300J P300K P300M P600A P600B P600D P600G P600J P600K PR1001 PR1002 PR1003 PR1004 http://onsemi.com 567 ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MUR5150E MUR6040 MUR6040 MUR6040 MUR620CT MUR620CT MUR620CT MUR620CT MUR820 MUR820 MUR8100E MUR820 MUR820 MUR840 MUR840 MUR860 MUR860 MUR8100E MUR8100E MUR8100E MURB1620CT MURB1620CT MURD320 MURD320 MURD320 MURD320 MURD620CT MURD620CT MURD620CT MURD620CT MURH840CT MURH860CT MURHB840CT MURS120T3 MURS140T3 MURS160T3 MURS160T3 MURS320T3 MURS360T3 1N5400RL 1N5401RL 1N5402RL 1N5404RL 1N5406RL 1N5407RL 1N5408RL MR754 MR754 MR754 MR754 MR760 MR760 1N4933RL 1N4934RL 1N4935RL 1N4936RL Page 360 423 423 423 363 363 363 363 370 370 376 370 370 370 370 370 370 376 376 376 313 313 303 303 303 303 306 306 306 306 381 384 319 286 286 286 286 299 299 449 449 449 449 449 449 449 484 484 484 484 484 484 452 452 452 452 AAAAAA AAAAA AAAAAA AAAAAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAAAA AAAAA AAAAAA AAAAAAAA AA Industry Part Number PR1005 PR1501 PR1501S PR1502 PR1502S PR1503 PR1503S PR1504 PR1504S PR1505 PR1505S PR2001 PR2002 PR2003 PR2004 PR2005 PR3001 PR3002 PR3003 PR3004 PR3005 R710XPT R711X R711XPT R712X R714XPT RA2505 RA251 RA2510 RA252 RA253 RA254 RA255 RA256 RA258 RB2D RB2G RG1A RG1B RG1D RG1G RG1J RG2A RG2B RG2J RG3A RG3B RG3D RG3G RG3J RG4A RG4B RG4D RG4G RG4J RGM30A ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement 1N4937RL 1N4933RL 1N4933RL 1N4934RL 1N4934RL 1N4935RL 1N4935RL 1N4936RL 1N4936RL 1N4937RL 1N4937RL MR852 MR852 MR852 MR854 MR856 MR852 MR852 MR852 MR854 MR856 MUR3020WT MUR3020WT MUR3020WT MUR3020WT MUR3020WT MR2504 MR2504 MR2510 MR2504 MR2504 MR2504 MR2510 MR2510 MR2510 MR852 MR856 1N4933 1N4934 1N4935 1N4936 1N4937 MR852 MR852 MR856 MR852 MR852 MR852 MR856 MR856 MR852 MR852 MR852 MR856 MR856 MUR3020PT Industry Part Number Page 452 452 452 452 452 452 452 452 452 452 452 454 454 454 454 454 454 454 454 454 454 431 431 431 431 431 463 463 463 463 463 463 463 463 463 454 454 452 452 452 452 452 454 454 454 454 454 454 454 454 454 454 454 454 454 425 RGM30B RGM30D RGM30G RGP10A RGP10B RGP10D RGP10G RGP10J RGP15A RGP15B RGP15D RGP15G RGP15J RGP20A RGP20B RGP20D RGP20G RGP20J RGP25A RGP25B RGP25D RGP25G RGP25J RGP30A RGP30B RGP30D RGP30G RGP30J RGP80A RGP80B RGP80D RGP80G RGP80J RL061 RL062 RL063 RL064 RL065 RL066 RL067 RL251 RL252 RL253 RL254 RL255 RL256 RL257 RP300A RP300B RP300D RP300G RP300J RS1A RS1AB RS1B RS1BB http://onsemi.com 568 ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MUR3020PT MUR3020PT MUR3040PT 1N4933 1N4934 1N4935 1N4936 1N4937 MR852 MR852 MR852 MR856 MR856 MR852 MR852 MR852 MR856 MR856 MR852 MR852 MR852 MR856 MR856 MR852 MR852 MR852 MR856 MR856 MUR820 MUR820 MUR820 MUR840 MUR860 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N5400 1N5401 1N5402 1N5404 1N5406 1N5406 1N5406 MR852 MR852 MR852 MR856 MR856 MRA4003T3 MURS120T3 MRA4003T3 MURS120T3 Page 425 425 425 452 452 452 452 452 454 454 454 454 454 454 454 454 454 454 454 454 454 454 454 454 454 454 454 454 370 370 370 370 370 447 447 447 447 447 447 447 449 449 449 449 449 449 449 454 454 454 454 454 456 286 456 286 AAAAAA AAAAA AAAAAA AAAAAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAAAA AAAAA AAAAAA AAAAAAAA AA Industry Part Number RS1D RS1DB RS1G RS1GB RS1J RS1JB RS1K RS1M RS2A RS2B RS2BA RS2D RS2DA RS2G RS2GA RS2J RS2JA RS2KA RS2MA RS3A RS3AB RS3B RS3BB RS3D RS3DB RS3G RS3GB RS3J RS3JB RUD810 RUD815 RUD820 RUR810 RUR815 RUR820 RURD1610 RURD1615 RURD1620 S1A S1AB S1B S1BB S1D S1DB S1G S1GB S1J S1JB S1K S1M S210 S2A S2AA S2B S2BA S2D ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MRA4003T3 MURS120T3 MRA4004T3 MURS160T3 MRA4005T3 MURS160T3 MRA4006T3 MRA4007T3 MURS120T3 MURS120T3 MRA4003T3 MURS120T3 MRA4003T3 MURS160T3 MRA4004T3 MURS160T3 MRA4005T3 MRA4006T3 MRA4007T3 MURS320T3 MURS120T3 MURS320T3 MURS120T3 MURS320T3 MURS120T3 MURS360T3 MURS160T3 MURS360T3 MURS160T3 MUR1620CT MUR1620CT MUR1620CT MUR820 MUR820 MUR820 MUR3020PT MUR3020PT MUR3020PT MRA4003T3 MRS1504T3 MRA4003T3 MRS1504T3 MRA4003T3 MRS1504T3 MRA4004T3 MRS1504T3 MRA4005T3 MURS160T3 MRA4006T3 MRA4007T3 MBRS1100T3 MRS1504T3 MRA4003T3 MRS1504T3 MRA4003T3 MRS1504T3 Industry Part Number Page 456 286 456 286 456 286 456 456 286 286 456 286 456 286 456 286 456 456 456 299 286 299 286 299 286 299 286 299 286 402 402 402 370 370 370 425 425 425 456 459 456 459 456 459 456 459 456 286 456 456 80 459 456 459 456 459 S2DA S2G S2GA S2J S2JA S2KA S2MA S3A S3AB S3B S3BB S3D S3DB S3G S3GB S3J S3JB S3K S3M S5AC S5BC S5CC S5GC S5JC SB1020 SB1035 SB1040 SB1045 SB1100 SB120 SB130 SB140 SB150 SB160 SB1620 SB1630 SB1640 SB1645 SB170 SB180 SB190 SB3100 SB320 SB330 SB340 SB350 SB360 SB370 SB380 SB390 SB5100 SBG1025L SBG1030CT SBG1035CT SBG1040CT SBG1045CT http://onsemi.com 569 ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MRA4003T3 MRS1504T3 MRA4004T3 MURS160T3 MRA4005T3 MRA4006T3 MRA4007T3 MURS320T3 MURS120T3 MURS320T3 MURS120T3 MURS320T3 MURS120T3 MURS360T3 MURS160T3 MURS360T3 MURS160T3 MRA4006T3 MRA4007T3 MURS320T3 MURS320T3 MURS320T3 MURS360T3 MURS360T3 MBR1045 MBR1045 MBR1045 MBR1045 MBR1100 1N5817 1N5818 1N5819 MBR150 MBR160 MBR1545CT MBR1545CT MBR1545CT MBR1545CT MBR1100 MBR1100 MBR1100 MBR3100 1N5820 1N5821 1N5822 MBR350RL MBR360 MBR3100 MBR3100 MBR3100 MBR3100 MBRB1545CT MBRB1545CT MBRB1545CT MBRB1545CT MBRB1545CT Page 456 459 456 286 456 456 456 299 286 299 286 299 286 299 286 299 286 456 456 299 299 299 299 299 207 207 207 207 156 146 146 146 152 152 174 174 174 174 156 156 156 171 159 159 159 168 168 171 171 171 171 116 116 116 116 116 AAAAAA AAAAA AAAAAA AAAAAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAAAA AAAAA AAAAAA AAAAAAAA AA Industry Part Number SBG1630CT SBG1635CT SBG1640CT SBG1645CT SBG3030CT SBG3040CT SBG3050CT SBL1030 SBL1030CT SBL1035 SBL1035CT SBL1040 SBL1040CT SBL1045 SBL1045CT SBL1050 SBL1050CT SBL1060 SBL1630 SBL1630CT SBL1635 SBL1635CT SBL1640 SBL1640CT SBL1645 SBL1645CT SBL1650 SBL1650CT SBL1660CT SBL2030CT SBL2035CT SBL2040CT SBL2045CT SBL2050CT SBL2060CT SBL25L20CT SBL25L25CT SBL25L30CT SBL3030CT SBL3030PT SBL3035PT SBL3040CT SBL3040PT SBL3045CT SBL3045PT SBL3050CT SBL3050PT SBL6030PT SBL6040PT SBL6050PT SBL8100 SBL830 SBL835 SBL840 SBL845 SBL850 ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MBRB1545CT MBRB1545CT MBRB1545CT MBRB1545CT MBRB3030CT MBRB2545CT MBRB2545CT MBR1035 MBR1535CT MBR1035 MBR1535CT MBR1045 MBR1545CT MBR1045 MBR1545CT MBR1060 MBR1545CT MBR1060 MBR1635 MBR1535CT MBR1635 MBR1535CT MBR1645 MBR1545CT MBR1645 MBR1545CT MBR1645 MBR1545CT MBR2060CT MBR2030CTL MBR2045CT MBR2045CT MBR2045CT MBR2060CT MBR2060CT MBR2535CTL MBR2535CTL MBR2535CTL MBR2535CTL MBR3045PT MBR3045PT MBR2545CT MBR3045PT MBR2545CT MBR3045PT MBR2545CT MBR3045PT MBR6045PT MBR6045PT MBR6045PT MBR10100 MBR1035 MBR1035 MBR1045 MBR1045 MBR1060 Industry Part Number Page 116 116 116 116 132 130 130 207 174 207 174 207 174 207 174 212 174 212 215 174 215 174 215 174 215 174 215 174 189 180 184 184 184 189 189 195 195 195 195 232 232 198 232 198 232 198 232 237 237 237 212 207 207 207 207 212 SBL860 SBL870 SBL880 SBL890 SBLB1030CT SBLB1040CT SBLB1630CT SBLB1640CT SBLB2030CT SBLB2040CT SBLB25L20CT SBLB25L25CT SBLB25L30CT SBLF2030CT SBLF2040CT SBLF25L20CT SBLF25L25CT SBLF25L30CT SBP1020T SBP1030T SBP1035T SBP1040T SBP1045T SBP1620T SBP1630T SBP1635T SBP1640T SBP1645T SBR1040 SBR1045 SBR1050 SBR1640 SBR1645 SBS1020T SBS1030T SBS1035T SBS1040T SBS1045T SBS1620T SBS1630T SBS1635T SBS1640T SBS1645T SBS520T SBS530T SBS535T SBS540T SBS545T SBS820T SBS830T SBS835T SBS840T SBS845T SBS850T SBS860T SBYV28-100 http://onsemi.com 570 ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MBR1060 MBR1090 MBR1090 MBR1090 MBRB1545CT MBRB1545CT MBRB1545CT MBRB1545CT MBRB2535CTL MBRB2535CTL MBRB2535CTL MBRB2535CTL MBRB2535CTL MBRF2545CT MBRF2545CT MBRF2545CT MBRF2545CT MBRF2545CT MBR1545CT MBR1545CT MBR1545CT MBR1545CT MBR1545CT MBR1545CT MBR1545CT MBR1545CT MBR1545CT MBR1545CT MBR1045 MBR1045 MBR1060 MBR1645 MBR1645 MBR1045 MBR1045 MBR1045 MBR1045 MBR1045 MBR1645 MBR1645 MBR1645 MBR1645 MBR1645 MBR745 MBR745 MBR745 MBR745 MBR745 MBR745 MBR745 MBR745 MBR745 MBR745 MBR1060 MBR1060 MUR420 Page 212 212 212 212 116 116 116 116 127 127 127 127 127 229 229 229 229 229 174 174 174 174 174 174 174 174 174 174 207 207 212 215 215 207 207 207 207 207 215 215 215 215 215 204 204 204 204 204 204 204 204 204 204 212 212 350 AAAAAA AAAAA AAAAAA AAAAAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAAAA AAAAA AAAAAA AAAAAAAA AA Industry Part Number SBYV28-150 SBYV28-200 SBYV28-50 SD241P SES5001 SES5002 SES5003 SES5301 SES5302 SES5303 SES5401 SES5401C SES5402 SES5402C SES5403 SES5403C SES5404 SES5404C SES5501 SES5502 SES5503 SES5504 SF10AG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG SF30AG SF30BG SF30CG SF30DG SF30FG SF30GG SF30HG SF30JG SL12 SL13 SL42 SL43 SL44 SMBYT01-400 SMBYT03-400 SMBYW01-200 SMBYW02-200 SMBYW04-200 SR1002 SR1003 SR1004 SR1005 SR1006 SR102 SR103 SR104 ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MUR420 MUR420 MUR420 MBR3045WT MUR120 MUR120 MUR120 MUR420 MUR420 MUR420 MUR820 MUR1620CT MUR820 MUR1620CT MUR820 MUR1620CT MUR820 MUR1620CT MUR1520 MUR1520 MUR1520 MUR1520 MUR120 MUR120 MUR120 MUR120 MUR160 MUR160 MUR160 MUR160 MUR420 MUR420 MUR420 MUR420 MUR460 MUR460 MUR460 MUR460 MBRA130LT3 MBRA130LT3 MBRS320T3 MBRS330T3 MBRS340T3 MURS140T3 MURS340T3 MURS120T3 MURS120T3 MURS320T3 MBR1045 MBR1045 MBR1045 MBR1060 MBR1060 MBR160 MBR160 MBR160 Industry Part Number Page 350 350 350 241 324 324 324 350 350 350 370 402 370 402 370 402 370 402 393 393 393 393 324 324 324 324 324 324 324 324 350 350 350 350 350 350 350 350 58 58 94 94 94 286 299 286 286 299 207 207 207 212 212 152 152 152 SR105 SR106 SR1602 SR1603 SR1604 SR302 SR303 SR304 SR305 SR306 SR802 SR803 SR804 SRP100A SRP100B SRP100D SRP100G SRP100J SRP300A SRP300B SRP300D SRP300G SRP300J SS12 SS13 SS14 SS210 SS24 SS25 SS26 SS28 SS29 SS32 SS33 SS34 SS35 SS36 STPR120A STPR120CT STPR1520D STPR1620CG STPR620CT STPR820D STPS0540Z STPS1045D STPS10L25D STPS10L60D STPS130A STPS130U STPS140A STPS140U STPS140Z STPS1545CG STPS1545CT STPS1545D STPS15L25D http://onsemi.com 571 ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MBR160 MBR160 MBR1545CT MBR1545CT MBR1545CT MBR340 MBR340 MBR340 MBR360 MBR360 MBR745 MBR745 MBR745 1N4933 1N4934 1N4935 1N4936 1N4937 MR852 MR852 MR852 MR856 MR856 MBRA130LT3 MBRA130LT3 MBRA140T3 MBRS1100T3 MBRS240LT3 MBRS1100T3 MBRS1100T3 MBRS1100T3 MBRS1100T3 MBRS320T3 MBRS330T3 MBRS340T3 MBRS360T3 MBRS360T3 MRA4003T3 MUR1620CT MUR1520 MURB1620CT MUR620CT MUR820 MBR0540T1,T3 MBR1045 MBR1035 MBR1060 MBRA130LT3 MBRS130LT3 MBRA140T3 MBRS140T3 MBR0540T1,T3 MBRB1545CT MBR1545CT MBR1645 MBR1635 Page 152 152 174 174 174 165 165 165 168 168 204 204 204 452 452 452 452 452 454 454 454 454 454 58 58 61 80 87 80 80 80 80 94 94 94 94 94 456 402 393 313 363 370 34 207 207 212 58 67 61 73 34 116 174 215 215 AAAAAA AAAAA AAAAAA AAAAAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAAAA AAAAA AAAAAA AAAAAAAA AA Industry Part Number STPS160U STPS16L40CT STPS1H100U STPS1L30A STPS1L30U STPS1L40A STPS1L40U STPS2045CF STPS2045CG STPS2045CT STPS2060CT STPS20H100CF STPS20H100CG STPS20H100CT STPS20L25CT STPS20L40CF STPS20L40CT STPS20L60CT STPS2H100U STPS2L30A STPS3045CG STPS3045CP STPS3045CT STPS3045CW STPS3045G STPS30L30CG STPS30L30CT STPS30L40CG STPS30L40CT STPS30L40CW STPS340S STPS340U STPS360B STPS3L25S STPS3L60S STPS4045CP STPS4045CW STPS40L15CW STPS40L40CW STPS40L45CW STPS5L25B STPS6045CP STPS6045CW STPS60L30CW STPS60L40CW STPS60L45CW STPS640CB STPS660CB STPS745D STPS8H100D STPS8L30B STTA106U STTA206S TG26 TG284 TG286 ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MBRS1100T3 MBR1545CT MBRS1100T3 MBRA130LT3 MBRS130LT3 MBRA140T3 MBRS140LT3 MBRF2545CT MBRB2060CT MBR2045CT MBR2060CT MBRF20100CT MBRB20100CT MBR20100CT MBR2030CTL MBRF2545CT MBR2045CT MBR2060CT MBRS1100T3 MBRA130LT3 MBRB2545CT MBR3045PT MBR2545CT MBR3045WT MBRB2545CT MBRB3030CTL MBR2535CTL MBRB2545CT MBR2545CT MBR3045WT MBRS340T3 MBRS240LT3 MBRD360T4 MBRS330T3 MBRS360T3 MBR4045PT MBR4045WT MBR4015LWT MBR4045WT MBR4045WT MBRD630CTT4 MBR6045PT MBR6045WT MBR6045WT MBR6045WT MBR6045WT MBRD640CTT4 MBRD660CTT4 MBR745 MBR10100 MBRD835L MURS160T3 MURS360T3 MUR460 MUR1640CT MUR1660CT Industry Part Number Page 80 174 80 58 67 61 76 229 118 184 189 223 120 189 180 229 184 189 80 58 130 232 198 241 130 136 195 130 198 241 94 87 97 94 94 235 248 244 248 248 101 237 250 250 250 250 101 101 204 212 105 286 299 350 402 402 TG288 TG4 TG6 TG84 TG86 UES1001 UES1002 UES1003 UES1101 UES1102 UES1103 UES1104 UES1105 UES1106 UES1301 UES1302 UES1303 UES1304 UES1401 UES1402 UES1403 UES1404 UES1420 UES1501 UES1502 UES1503 UES1504 UES2401 UES2402 UES2403 UES2404 UES2601 UES2602 UES2603 UES2604 UES2605 UES2606 UF1001 UF1002 UF1003 UF1004 UF1005 UF1006 UF1007 UF1501S UF1502S UF1503S UF1504S UF1505S UF1506S UF1507S UF3001 UF3002 UF3003 UF3004 UF3005 http://onsemi.com 572 ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MUR1660CT MUR140 MUR160 MUR840 MUR860 MUR120 MUR120 MUR120 MUR120 MUR120 MUR120 MUR120 MUR140 MUR140 MUR420 MUR420 MUR420 MUR420 MUR820 MUR820 MUR820 MUR820 MUR860 MUR1520 MUR1520 MUR1520 MUR1520 MUR1620CT MUR1620CT MUR1620CT MUR1620CT MUR3020PT MUR3020PT MUR3020PT MUR3020PT MUR3040PT MUR3040PT MUR120 MUR120 MUR120 MUR160 MUR160 MUR180E MUR1100E MUR120 MUR120 MUR120 MUR160 MUR160 MUR180E MUR1100E MUR420 MUR420 MUR420 MUR460 MUR460 Page 402 324 324 370 370 324 324 324 324 324 324 324 324 324 350 350 350 350 370 370 370 370 370 393 393 393 393 402 402 402 402 425 425 425 425 425 425 324 324 324 324 324 329 329 324 324 324 324 324 329 329 350 350 350 350 350 AAAAAA AAAAA AAAAAA AAAAAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAAAA AAAAA AAAAAA AAAAAAAA AA Industry Part Number UF3006 UF3007 UF4001 UF4002 UF4003 UF4004 UF4005 UF4006 UF4007 UF5400 UF5401 UF5402 UF5403 UF5404 UF5405 UF5406 UF5407 UF5408 UG1001 UG1002 UG1003 UG1004 UG1005 UG18ACT UG18BCT UG18CCT UG18DCT UG1A UG1B UG1C UG1D UG3001 UG3002 UG3003 UG3004 UG3005 UG30APT UG30BPT UG30CPT UG30DPT UG4A UG4B UG4C UG4D UG8AT UG8BT UG8CT UG8DT UPS120 UPS120E UPS140 UPS5817 UPS5819 US1A US1B US1D ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MUR480E MUR4100E MUR120 MUR120 MUR120 MUR160 MUR160 MUR180E MUR1100E MUR420 MUR420 MUR420 MUR460 MUR460 MUR460 MUR460 MUR480E MUR4100E MUR120 MUR120 MUR120 MUR160 MUR160 MUR1620CT MUR1620CT MUR1620CT MUR1620CT MUR120 MUR120 MUR120 MUR120 MUR420 MUR420 MUR420 MUR460 MUR460 MUR3020WT MUR3020WT MUR3020WT MUR3020WT MUR420 MUR420 MUR420 MUR420 MUR820 MUR820 MUR820 MUR820 MBRM120LT3 MBRM120ET3 MBRM140T3 MBRM120LT3 MBRM140T3 MRA4003T3 MRA4003T3 MRA4003T3 Industry Part Number Page 355 355 324 324 324 324 324 329 329 350 350 350 350 350 350 350 355 355 324 324 324 324 324 402 402 402 402 324 324 324 324 350 350 350 350 350 431 431 431 431 350 350 350 350 370 370 370 370 43 38 53 43 53 456 456 456 US1G US1J US1K US1M USD1120 USD1130 USD1140 USD620 USD620C USD635 USD635C USD640 USD640C USD645 USD645C USD720 USD720C USD735 USD735C USD740 USD740C USD745 USD745C USD820 USD835 USD840 USD845 USD920 USD935 USD940 USD945 UT234 UT235 UT236 UT237 UT238 UT242 UT244 UT245 UT247 UT249 UT251 UT252 UT254 UT255 UT257 UT258 UT347 UT361 UT362 UT363 UT364 UTR01 UTR02 UTR10 UTR11 http://onsemi.com 573 ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MRA4004T3 MRA4005T3 MRA4006T3 MRA4007T3 MBR160 MBR160 MBR160 MBR745 MBR1545CT MBR745 MBR1545CT MBR745 MBR1545CT MBR745 MBR1545CT MBR1045 MBR1545CT MBR1045 MBR1545CT MBR1045 MBR1545CT MBR1045 MBR1545CT MBR1645 MBR1645 MBR1645 MBR1645 MBR1645 MBR1645 MBR1645 MBR1645 1N4003 1N4004 1N4002 1N4005 1N4005 1N4003 1N4004 1N4005 1N4005 1N4002 1N4002 1N4003 1N4004 1N4005 1N4005 1N4006 1N4007 1N4006 1N4006 1N4007 1N4007 1N4933 1N4933 1N4934 1N4934 Page 456 456 456 456 152 152 152 204 174 204 174 204 174 204 174 207 174 207 174 207 174 207 174 215 215 215 215 215 215 215 215 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 447 452 452 452 452 AAAAAA AAAAA AAAAAA AAAAAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAA AAAAAA AAAAAA AA AAAAAA AAAAA AAAAAA AAA AAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAAAA AAAAA AAAAAA AAAAAAAA AA Industry Part Number UTR12 UTR20 UTR21 UTR22 UTR2305 UTR2310 UTR2320 UTR2340 UTR2350 UTR2360 UTR30 UTR31 UTR32 UTR3305 UTR3310 UTR3320 UTR3340 UTR3350 UTR3360 UTR40 UTR41 UTR42 UTR4305 UTR4310 UTR4320 UTR4340 UTR4350 UTR4360 UTR50 UTR51 UTR52 UTR60 UTR61 UTR62 UTX105 UTX110 UTX120 UTX125 UTX205 UTX210 UTX215 UTX220 UTX225 UTX3105 UTX3110 UTX3115 UTX3120 UTX4105 UTX4110 UTX4115 UTX4120 V322 V324 V326 ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement 1N4934 1N4935 1N4935 1N4935 MR852 MR852 MR852 MR856 MR856 MR856 1N4936 1N4936 1N4936 MR852 MR852 MR852 MR856 MR856 MR856 1N4936 1N4936 1N4936 MR852 MR852 MR852 MR852 MR856 MR856 1N4937 1N4937 1N4937 1N4937 1N4937 1N4937 1N4933 1N4934 1N4935 1N4935 1N4933 1N4934 1N4935 1N4935 1N4935 MR852 MR852 MR852 MR852 MR852 MR852 MR852 MR852 1N5402 1N5404 1N5406 Industry Part Number Page 452 452 452 452 454 454 454 454 454 454 452 452 452 454 454 454 454 454 454 452 452 452 454 454 454 454 454 454 452 452 452 452 452 452 452 452 452 452 452 452 452 452 452 454 454 454 454 454 454 454 454 449 449 449 V330X V331X V332X V334X V336X V342 V344 V346 V350X V351X V352X V354X V356X VHE1401 VHE1402 VHE1403 VHE1404 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 VHE610 VHE615 VHE620 VSK1020 VSK1035 VSK1045 VSK12 VSK120 VSK13 VSK130 VSK14 VSK140 VSK2004 VSK2020 VSK2035 VSK2045 VSK2420 VSK2435 VSK2445 VSK320 VSK330 VSK340 VSK62 VSK63 VSK64 VSK920 VSK935 VSK945 http://onsemi.com 574 ON Semiconductor Nearest Replacement ON Semiconductor Similar Replacement MR852 MR852 MR852 MR856 MR856 1N5402 1N5404 1N5406 MR852 MR852 MR852 MR856 MR856 MUR820 MUR820 MUR820 MUR820 MUR120 MUR120 MUR120 MUR120 MUR1620CT MUR1620CT MUR1620CT MUR1620CT MUR420 MUR420 MUR420 MUR420 MBR1045 MBR1045 MBR1045 MBR1545CT 1N5817 MBR1545CT 1N5818 MBR1545CT 1N5819 MBRP20060CT MBR2045CT MBR2045CT MBR2045CT MBR2545CT MBR2545CT MBR2545CT MBR340 MBR340 MBR340 MBR745 MBR745 MBR745 MBR1545CT MBR1545CT MBR1545CT Page 454 454 454 454 454 449 449 449 454 454 454 454 454 370 370 370 370 324 324 324 324 402 402 402 402 350 350 350 350 207 207 207 174 146 174 146 174 146 270 184 184 184 198 198 198 165 165 165 204 204 204 174 174 174 ON SEMICONDUCTOR MAJOR WORLDWIDE SALES OFFICES UNITED STATES ALABAMA Huntsville . . . . . . . . . . . . . . . . . . 256-774-1000 CALIFORNIA Irvine . . . . . . . . . . . . . . . . . . . . . . 949-623-6800 San Jose . . . . . . . . . . . . . . . . . . 408-749-0510 COLORADO Littleton . . . . . . . . . . . . . . . . . . . . 303-256-5884 FLORIDA Tampa . . . . . . . . . . . . . . . . . . . . . 813-286-6181 GEORGIA Atlanta . . . . . . . . . . . . . . . . . . . . 770-338-3810 ILLINOIS Chicago . . . . . . . . . . . . . . . . . . . 847-413-2500 MASSACHUSETTS Boston . . . . . . . . . . . . . . . . . . . . 781-229-5880 MICHIGAN Livonia . . . . . . . . . . . . . . . . . . . . 734-953-6704 MINNESOTA Plymouth . . . . . . . . . . . . . . . . . . 612-249-2360 NORTH 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TYPE DEFINITIONS DATA SHEET CLASSIFICATIONS A Data Sheet is the fundamental publication for each individual product/device, or series of products/devices, containing detailed parametric information and any other key information needed in using, designing-in or purchasing of the product(s)/device(s) it describes. Below are the three classifications of Data Sheet: Product Preview; Advance Information; and Fully Released Technical Data PRODUCT PREVIEW A Product Preview is a summary document for a product/device under consideration or in the early stages of development. The Product Preview exists only until an "Advance Information" document is published that replaces it. The Product Preview is often used as the first section or chapter in a corresponding reference manual. The Product Preview displays the following disclaimer at the bottom of the first page: "This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice." ADVANCE INFORMATION The Advance Information document is for a device that is NOT fully qualified, but is in the final stages of the release process, and for which production is eminent. 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