July 2017
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This is information on a product in full production.
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STPSC8065
650 V power Schottky silicon carbide diode
Datasheet - production data
Features
No or negligible reverse recovery
Switching behavior independent of
temperature
Dedicated to PFC applications
High forward surge capability
Operating Tj from -40 °C to 175 °C
ECOPACK®2 compliant component
Description
The SiC diode is an ultra high performance
power Schottky diode. It is manufactured using a
silicon carbide substrate. The wide band gap
material allows the design of a Schottky diode
structure with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in PFC applications, this
ST SiC diode will boost performance in hard
switching conditions. Its high forward surge
capability ensures good robustness during
transient phases.
Table 1: Device summary
Symbol
Value
IF(AV)
VRRM
Tj (max.)
VF (typ.)
Characteristics
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1 Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
650
V
IF(RMS)
Forward rms current
22
A
IF(AV)
Average forward current
TC = 150 °C(1), DC current
8
A
IFRM
Repetitive peak forward
current
Tc = 150 °C, Tj = 175 °C, δ = 0.1
36
A
IFSM
Surge non repetitive forward
current
tp = 10 ms sinusoidal, Tc = 25 °C
46
A
tp = 10 ms sinusoidal, Tc = 125 °C
38
tp = 10 µs square, Tc = 25 °C
200
Tstg
Storage temperature range
-65 to +175
°C
Tj
Operating junction temperature(2)
-40 to +175
°C
Notes:
(1)Value based on Rth(j-c) max.
(2)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Table 3: Thermal parameters
Symbol
Parameter
Value
Unit
Typ.
Max.
Rth(j-c)
Junction to case
1.1
1.65
°C/W
Table 4: Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
-
2
105
µA
Tj = 150 °C
-
20
750
VF(2)
Forward voltage drop
Tj = 25 °C
IF = 8 A
-
1.30
1.45
V
Tj = 150 °C
-
1.45
1.65
Tj = 175 °C
-
1.50
Notes:
(1)Pulse test: tp = 5 ms, δ < 2%
(2)Pulse test: tp = 500 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.95 x IF(AV) + 0.087 x IF2(RMS)
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Characteristics
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Table 5: Dynamic electrical characteristics
Symbol
Parameter
Test conditions
Typ.
Unit
QCj(1)
Total capacitive charge
VR = 400 V
28
nC
Cj
Total capacitance
VR = 0 V, Tc = 25 °C, F = 1 MHz
540
pF
VR = 400 V, Tc = 25 °C, F = 1 MHz
45
Notes:
(1)Most accurate value for the capacitive charge:  󰇛󰇜


Characteristics
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1.1 Characteristics (curves)
Figure 1: Forward voltage drop versus forward
current (typical values)
Figure 2: Reverse leakage current versus reverse
voltage applied (typical values)
Figure 3: Peak forward current versus case
temperature
Figure 4: Junction capacitance versus reverse
voltage applied (typical values)
Figure 5: Relative variation of thermal impedance
junction to case versus pulse duration
Figure 6: Non-repetitive peak surge forward
current versus pulse duration
(sinusoidal waveform)
0
2
4
6
8
10
12
14
16
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Ta=150 °C
Ta=175 °C
Ta=25 °C
Pulse test : tp=500µs
Ta=100 °C
VF(V)
IF(A)
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0 50 100 150 200 250 300 350 400 450 500 550 600 650
Tj=25 °C
Tj=150 °C
Tj=175 °C
VR(V)
IR(µA)
0
20
40
60
80
0 25 50 75 100 125 150 175
T
δ=tp/T tp
δ= 1
δ= 0.5
δ= 0.1
δ= 0.3
δ= 0.7
IM(A)
TC(°C)
0
100
200
300
400
500
600
0.1 1.0 10.0 100.0 1000.0
F=1 MHz
VOSC=30 mVRMS
Tj=25 °C
VR(V)
Cj(pF)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Single pulse
tp(s)
Zth(j-c)/Rth(j-c)
1.E+01
1.E+02
1.E+03
1.E-05 1.E-04 1.E-03 1.E-02
Ta=25 °C
Ta=125 °C
tp(s)
IFSM(A)
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Characteristics
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Figure 7: Total capacitive charges versus reverse voltage applied (typical values)
Package information
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DocID030730 Rev 2
2 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.55 N·m
Maximum torque value: 0.7 N·m
2.1 TO-220AC package information
Figure 8: TO-220AC package outline
STPSC8065
Package information
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Table 6: TO-220AC package mechanical data
Ref.
Dimensions
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
H2
10.00
10.40
0.393
0.409
L2
16.40 typ.
0.645 typ.
L4
13.00
14.00
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
2.6 typ.
0.102 typ.
ØI
3.75
3.85
0.147
0.151
Ordering information
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3 Ordering information
Table 7: Ordering information
Order code
Marking
Package
Weight
Base qty.
Delivery mode
STPSC8065D
PSC8065D
TO-220AC
1.86 g
50
Tube
4 Revision history
Table 8: Document revision history
Date
Revision
Changes
13-Jun-2017
1
First issue.
18-Jul-2017
2
Updated Table 4: "Static electrical characteristics"
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