1. Product profile
1.1 General description
Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in
a leadless ultra small SOD882 Surface-Mo unte d Device (SMD) plastic package designed
to protect one signa l line fr om the dama ge c ause d by ESD and other transients. The
combination of extremely low capacitance, high ESD maximum rating and ultra small
package makes the device ideal for high-speed data line protection.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
PESD5V0X1BCAL
Extremely low capacitance bidirectional ESD protection diode
Rev. 1 — 1 February 2012 Product data sheet
Bidirectional ESD protection of one line ESD protection up to 15 kV
Extremely low capacitance:
Cd=0.85pF
IEC 61000-4-2; level 4 (ESD)
Low clamping voltage: VCL =17V AEC-Q101 qualified
Ultra low leakage current: IRM =1nA
Computers and peripherals Communication systems
Audio and video equipment Portable electronics
Cellular handsets and accessories SIM card protection
10/100/1000 Mbit/s Ethernet USB, High-Definition Multimedia
Interface (HDMI), FireWire
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per device
VRWM reverse standoff voltage - - 5.5 V
Cddiode capacitance f = 1 MHz; VR= 0 V - 0.85 0.95 pF
PESD5V0X1BCAL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 1 February 20 12 2 of 12
NXP Semiconductors PESD5V0X1BCAL
Extremely low capacitance bidirectional ESD protection diode
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
[1] Device stressed with ten non-repetitive current pulses (8/20 s exponential decay waveform according to
IEC 61000-4-5 and IEC 61643-321).
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode (diode 1)
2 cathode (diode 2)
21
Transparent
top view
sym045
21
Table 3. Ordering information
Type number Package
Name Description Version
PESD5V0X1BCAL - leadless ultra small plastic pa ckage; 2 terminals;
body 1.0 0.6 0.5 mm SOD882
Table 4. Marking codes
Type number Marking code
PESD5V0X1BCAL NN
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per device
IPPM rated peak pulse current tp=8/20s[1] -1.8A
Tjjunction temperature - 150 C
Tamb ambient temperature 55 +150 C
Tstg storage temperature 65 +150 C
PESD5V0X1BCAL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 1 February 20 12 3 of 12
NXP Semiconductors PESD5V0X1BCAL
Extremely low capacitance bidirectional ESD protection diode
[1] Device stressed with ten non-repetitive ESD pulses.
Table 6. ESD maximum ratings
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
Per device
VESD electrostatic discharge voltage IEC 61000-4-2
(air discharge) [1] -15kV
IEC 61000-4-2
(contact discharge) [1] -15kV
machine model - 400 V
MIL-STD-883
(human body model) -10kV
Table 7. ESD standards compliance
Standard Conditions
Per device
IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3B (human body model) > 8 kV
Fig 1. 8/20 s pulse waveform according to
IEC 61000-4-5 Fig 2. ESD pulse wavefo rm according to
IEC 61000-4-2
t (μs)
0403010 20
001aaa630
40
80
120
IPP
(%)
0
et
100 % IPP; 8 μs
50 % IPP; 20 μs
001aaa631
I
PP
100 %
90 %
t
30 ns 60 ns
10 %
t
r
= 0.7 ns to 1 ns
PESD5V0X1BCAL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 1 February 20 12 4 of 12
NXP Semiconductors PESD5V0X1BCAL
Extremely low capacitance bidirectional ESD protection diode
6. Characteristics
[1] Device stressed with 8/20 s exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321.
[2] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp= 100 ns; square pulse;
ANS/IESD STM5-1-2008.
Table 8. Characteristics
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per device
VRWM reverse standoff
voltage --5.5V
IRM reverse leakage current VRWM =5.5V - <1 10 nA
VBR breakdown voltage IR=10mA 8.1 9.8 12.3 V
Cddiode capacitance f = 1 MHz; VR= 0 V - 0.85 0.95 pF
VCL clamping voltage IPPM =1.8A [1] --17V
rdyn dynamic resistance IR=10A [2] -0.5-
f=1MHz; T
amb =25C
Fig 3. Diode capacitance as a function of reverse
voltage; typical values Fig 4. V-I ch aracteristics for a bidirectional
ESD pr otection diode
VR (V)
054231
006aac886
0.7
0.8
0.6
0.9
1.0
Cd
(pF)
0.5
006aab325
V
CL
V
BR
V
RWM
V
CL
V
BR
V
RWM
I
RM
I
RM
I
R
I
R
I
PP
I
PP
+
I
PPM
I
PPM
PESD5V0X1BCAL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 1 February 20 12 5 of 12
NXP Semiconductors PESD5V0X1BCAL
Extremely low capacitance bidirectional ESD protection diode
Fig 5. ESD clamping test setu p and waveforms
50 Ω
Rd
Cs
DUT
(DEVICE
UNDER
TEST)
GND
GND
450 Ω
RG 223/U
50 Ω coax
ESD TESTER
IEC 61000-4-2 network
Cs = 150 pF; Rd = 330 Ω
4 GHz DIGITAL
OSCILLOSCOPE
10x
ATTENUATOR
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
unclamped –8 kV ESD pulse waveform
(IEC 61000-4-2 network)
GND
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
006aac887
GND
clamped –8 kV ESD pulse waveform
(IEC 61000-4-2 network)
vertical scale = 20 V/div
horizontal scale = 10 ns/div
vertical scale = 20 V/div
horizontal scale = 10 ns/div
vertical scale = 2 kV/div
horizontal scale = 10 ns/div
vertical scale = 2 kV/div
horizontal scale = 10 ns/div
PESD5V0X1BCAL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 1 February 20 12 6 of 12
NXP Semiconductors PESD5V0X1BCAL
Extremely low capacitance bidirectional ESD protection diode
7. Application information
PESD5V0X1BCAL is designed for the protection of one bidirectional data or signal line
from surge pulses and ESD damage. The device is suitable on lines where the signal
polarities are both, positive and negative with respect to ground.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as clos e to the input terminal or connector as possible.
2. Minimize the path length between the device and the protected line.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Fig 6. Application di ag ram
006aac986
PESD5V0X1BCAL
GND
line to be protected
PESD5V0X1BCAL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 1 February 20 12 7 of 12
NXP Semiconductors PESD5V0X1BCAL
Extremely low capacitance bidirectional ESD protection diode
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
Generic drawing for SOD882 package. This product has no cathode marking.
Fig 7. Package outline PESD5V0X1BCAL (SOD882)
03-04-17Dimensions in mm
0.55
0.47
0.65
0.62
0.55
0.50
0.46
cathode marking on top side (if applicable)
1.02
0.95
0.30
0.22
0.30
0.22
2
1
Table 9. Packing methods
The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
10000
PESD5V0X1BCAL SOD882 2 mm pitch, 8 mm tape and reel -315
PESD5V0X1BCAL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 1 February 20 12 8 of 12
NXP Semiconductors PESD5V0X1BCAL
Extremely low capacitance bidirectional ESD protection diode
11. Soldering
Reflow soldering is the only recommended soldering method.
Fig 8. Reflow soldering footprint PESD5V0X1BCAL (SOD882)
solder lands
solder resist
occupied area
solder paste
sod882_fr
0.9
0.3
(2×)
R0.05 (8×)
0.6
(2×) 0.7
(2×)
0.4
(2×)
1.3
0.5
(2×)
0.8
(2×)
0.7
Dimensions in mm
PESD5V0X1BCAL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 1 February 20 12 9 of 12
NXP Semiconductors PESD5V0X1BCAL
Extremely low capacitance bidirectional ESD protection diode
12. Revision history
Table 10. Revision history
Document ID Release da te Data sheet status Change notice Supersedes
PESD5V0X1BCAL v.1 20120201 Product data sheet - -
PESD5V0X1BCAL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 1 February 20 12 10 of 12
NXP Semiconductors PESD5V0X1BCAL
Extremely low capacitance bidirectional ESD protection diode
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status o f device( s) described in this d ocument may have change d since this document w as publish ed and may di ffe r in case of multiple devices. The latest produ ct statu s
information is available on the Internet at URL http://www.nxp.com.
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Draft — The document is a draft version only. The content is still under
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
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Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product develop ment.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
PESD5V0X1BCAL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 1 February 20 12 11 of 12
NXP Semiconductors PESD5V0X1BCAL
Extremely low capacitance bidirectional ESD protection diode
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data — The Quick reference dat a is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors PESD5V0X1BCAL
Extremely low capacitance bidirectional ESD protection diode
© NXP B.V. 2012. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 1 February 2012
Document identifier: PESD5V0X1BCAL
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
7 Application information. . . . . . . . . . . . . . . . . . . 6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 6
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
10 Packing information . . . . . . . . . . . . . . . . . . . . . 7
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14 Contact information. . . . . . . . . . . . . . . . . . . . . 11
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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