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BSS138L — N-Channel Logic Level Enhancement Mode Field Effect Transistor

BSS138L Rev. 1.0.1 1

October 2014

BSS138L

N-Channel Logic Level Enhancement Mode Field Effect

Transistor

Features

• High Density Cell Design for Low RDS(ON)

• Rugged and Reliable

• Compact Industry Standard SOT-23 Surface Mount

Package

• Very Low Capacitance

• Fast Switching Speed

Ordering Information

Part Number Marking Package Packing Method

BSS138L SL SOT-23 3L Tape and Reel

SOT-23

Description

This N-channel enhancement mode field effect transistor

is produced using high cell density, trench MOSFET

technology. This product minimizes on-state resistance

while providing rugged, reliable, and fast switching per-

formance. This product is particularly suited for low-volt-

age, low-current applications such as small servo motor

control, power MOSFET gate drivers, logic level transla-

tor, high speed line drivers, power management/power

supply and switching applications.

BSS138L — N-Channel Logic Level Enhancement Mode Field Effect Transistor

BSS138L Rev. 1.0.1 2

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Thermal Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference

is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is

determined by the user's board design.

Scale 1: 1 on letter size paper

ESD Rating(2)

Note:

2. ESD values are in typical, no over-voltage rating is implied, ESD CDM zap voltage is 2000 V maximum.

Symbol Parameter Value Unit

VDSS Drain-Source Voltage 50 V

VGSS Gate-Source Voltage ±20 V

IDMaximum Drain Current Continuous 0.20 A

Pulsed 0.80

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering Purposes, 1/16 inch from Case

for 10 Seconds 300 °C

Symbol Parameter Value Unit

Maximum Power Dissipation(1) 0.35 W

Derate Above 25°C2.8mW/°C

RθJA Thermal Resistance, Junction-to-Ambient(1) 380 °C/W

Symbol Parameter Value Unit

HBM Human Body Model per ANSI/ESDA/JEDEC JS-001-2012 50 V

CDM Charged Device Model per JEDEC C101C >2000

a) 380°C/W when mounted on a minimum pad.

BSS138L — N-Channel Logic Level Enhancement Mode Field Effect Transistor

BSS138L Rev. 1.0.1 3

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.

Symbol Parameter Conditions Min. Typ. Max. Unit

Off Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 50.0 65.4 V

ΔBVDSS

ΔTJ

Breakdown Voltage

Temperature Coefficient ID = 250 μA, Referenced to 25°C58mV/°C

IDSS Zero Gate Voltage Drain Current

VDS = 50 V, VGS = 0 V 0.263 500 nA

VDS = 50 V, VGS = 0 V,

TJ = 125°C0.109 5 μA

VDS = 30 V, VGS = 0 V 0.062 100 nA

IGSSF Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V 0.058 100 nA

IGSSR Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V -0.06 -100

On Characteristics(3)

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 0.80 1.25 1.50 V

ΔVGS(th)

ΔTJ

Gate Threshold Voltage

Temperature Coefficient ID = 1 mA, Referenced to 25°C -2.42 mV/°C

RDS(ON)

Static Drain-Source

On-Resistance

VGS = 5 V, ID = 0.20 A 2.78 3.50 Ω

VGS = 2.75 V, ID = 0.20 A 3.78 10

ID(ON) On-State Drain Current VGS = 10 V, VDS = 5 V 0.20 0.67 A

gFS Forward Transconductance VDS = 10 V, ID = 0.22 A 0.12 0.35 S

Dynamic Characteristics

Ciss Input Capacitance

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

12.2 50 pF

Coss Output Capacitance 3.04 25 pF

Crss Reverse Transfer Capacitance 1.43 5 pF

RGGate Resistance VGS = 15 V, VGS = 1.0 MHz 26.6 Ω

Switching Characteristics(3)

td(on) Turn-On Delay

VDD = 30 V, ID = 0.29 A,

VGS = 10 V

2.2 5 ns

trTurn-On Rise Time 1.8 18 ns

td(off) Turn-Off Delay 5.3 36 ns

tfTurn-Off Fall Time 5.1 14 ns

QgTotal Gate Charge

VDS = 25 V, ID = 0.22 A,

VGS = 10 V, IG = 0.1 mA

0.549 2.4 nC

Qgs Gate-Source Charge 0.075 nC

Qgd Gate-Drain Charge 0.117 nC

Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current 0.22 A

VSD

Drain-Source Diode

Forward Voltage VGS = 0 V, IS = 115 mA 0.93 1.4 V

BSS138L — N-Channel Logic Level Enhancement Mode Field Effect Transistor

BSS138L Rev. 1.0.1 4

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate Vol tage

and Drain Current

Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with

Gate-to-Source Voltage

Figure 5. Transfer Characteristics F igure 6. Body Diode Forward Voltage Variation with

Source Current and Temperature

ID, DRAIN CURRENT (A)

0.0

0.2

0.4

0.6

0.8

1.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

VDS, DRAIN-SOURCE VOLT AGE (V)

=10V 6.0

4.5

3.5

3.0

2.5

2.0

RDS(ON), NORMALIZED

DRAIN-SOUCE ON-RESISTA NCE

1.0

1.4

1.8

2.2

2.6

3.0

0 0.2 0.4 0.6 0.8 1

ID, DRAIN CURRENT (A)

VGS=2.5V

6.0

4.5

3.5

3.0

RDS(ON), NORMALIZED

DRAIN-SOUCE ON-RESISTANCE

0.5

0.7

0.9

1.1

1.3

1.5

1.7

1.9

2.1

-75 -50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERA TURE (oC)

ID= 0.22A

VGS = 10V

RDS(ON), ON-RESISTANCE (OHM)

1.5

2.5

3.5

4.5

5.5

6.5

7.5

12345678910

VGS, GATE TO SOURCE VOLTAGE (V)

ID= 0.11 A

TJ= 125oC

TJ= 25oC

ID, DRAIN CURRENT (A)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0 1 2 3 4 5 6 7

VGS, GATE TO SOURCE VOLTAGE (V)

25oC

-55oC

TJ= 125oC

VDS = 10 V

IS, REVERSE DRAIN CURRENT (A)

0.001

0.01

0.1

0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOL TAGE (V)

TJ= 125oC25oC-55oC

VGS = 0V

BSS138L — N-Channel Logic Level Enhancement Mode Field Effect Transistor

BSS138L Rev. 1.0.1 5

Typical Performance Characteristics (Continued)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics

Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation

Figure 11. Transient Thermal Response Curve.

VGS, GATE-SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

0 0.2 0.4 0.6

VDS= 2 5 V

= 30V

= 8V

CAPACITANCE (pF)

0.01 0.1 1 10 100

VDS, DRAIN TO SOURCE VOLTAGE (V)

Ciss

Crss

Coss

f = 1MHz

VGS = 0V

ID, DRAIN CURRENT (A)

0.002

0.02

0.2

0.01 0.1 1 10 100

VDS, DRAIN-SOURCE VOLT AGE (V)

10s

100ms

RDS(ON) LIMIT

SINGLE PULSE

RJA = 380oC/W

TA= 25oC

10ms

1ms

100 s

200

0.1

100

0.0001 0.001 0.01 0.1 1 10 100 1000

SINGLE PULSE

RJA = 380oC/W

TA= 25oC

PEAK TRANSIENT POWER (W)

t1 (s)

Normalized Thermal Impedance ZoJA

0.01

0.1

0.0001 0.001 0.01 0.1 1 10 100 1000

t, Rectangular Pulse Duration

TRANSIENT THERMAL IMPEDANCE

Single Pulse

0.01

0.02

0.05

0.1

0.2

0.5

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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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