BLF6G22-180PN; BLF6G22LS-180PN Power LDMOS transistor Rev. 5 -- 12 July 2013 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f (MHz) (V) (W) 2-carrier W-CDMA 2110 to 2170 32 50 [1] VDS PL(AV) D ACPR (dB) (%) (dBc) 17.5 27.5 35[1] Gp Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 32 V and an IDq of 1600 mA: Average output power = 50 W Power gain = 17.5 dB (typ) Efficiency = 27.5 % ACPR = 35 dBc Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2000 MHz to 2200 MHz) Internally matched for ease of use Qualified up to a supply voltage of 32 V BLF6G22(LS)-180PN NXP Semiconductors Power LDMOS transistor Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 MHz to 2200 MHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol BLF6G22-180PN (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 2 1 5 3 3 4 5 4 [1] source 2 sym117 BLF6G22LS-180PN (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 1 2 5 3 3 [1] source 5 4 4 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package BLF6G22-180PN Name Description Version - flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A earless flanged balanced LDMOST ceramic package; 4 leads SOT539B BLF6G22LS-180PN - BLF6G22-180PN_22LS-180PN All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 -- 12 July 2013 (c) NXP B.V. 2013. All rights reserved. 2 of 14 BLF6G22(LS)-180PN NXP Semiconductors Power LDMOS transistor 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 65 V VGS gate-source voltage 0.5 +13 V Tstg storage temperature 65 +150 C Tcase case temperature - 150 C Tj junction temperature - 225 C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Type Typ Unit Rth(j-case) thermal resistance from junction to case Tcase = 80 C; BLF6G22-180PN PL(AV) = 50 W BLF6G22LS-180PN 0.45 K/W 0.38 K/W 6. Characteristics Table 6. Characteristics Tj = 25 C per section; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.5 mA 65 - - V VDS = 10 V; ID = 144 mA 1.575 1.9 2.3 V 1.725 2.1 2.45 V VDS = 28 V - - 3 A VDS = 60 V - - 5 A VGS(th) gate-source threshold voltage VGSq gate-source quiescent voltage VDS = 32 V; ID = 800 mA IDSS drain leakage current VGS = 0 V IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 25 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 300 nA gfs forward transconductance VDS = 10 V; ID = 7.2 A - 10 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 5 A - 0.1 0.165 BLF6G22-180PN_22LS-180PN All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 -- 12 July 2013 (c) NXP B.V. 2013. All rights reserved. 3 of 14 BLF6G22(LS)-180PN NXP Semiconductors Power LDMOS transistor 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1 to 64 PDPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 32 V; IDq = 1600 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Gp power gain PL(AV) = 50 W 16.3 17.5 18.7 dB RLin input return loss PL(AV) = 50 W - 10 dB D drain efficiency PL(AV) = 50 W 25 27.5 - % ACPR adjacent channel power ratio PL(AV) = 50 W - 35 dBc 6.5 33 Unit Table 8. Application information Mode of operation: 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1 to 64 PDPCH; f1 = 2162.5 MHz; f2 = 2167.5 MHz; RF performance at VDS = 32 V; IDq = 1600 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter PARO Conditions Min output peak-to-average ratio PL(AV) = 115 W; at 0.01 % probability on CCDF Typ Max Unit 4.05 4.5 - dB 7.1 Ruggedness in class-AB operation The BLF6G22-180PN and BLF6G22LS-180PN are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1600 mA; PL = 180 W (CW); f = 2170 MHz. 001aah632 20 Gp (dB) 60 D (%) D 18 40 Gp 16 20 14 0 50 100 0 200 150 PL (W) VDS = 32 V; IDq = 1600 mA; f = 2170 MHz. Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical values BLF6G22-180PN_22LS-180PN All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 -- 12 July 2013 (c) NXP B.V. 2013. All rights reserved. 4 of 14 BLF6G22(LS)-180PN NXP Semiconductors Power LDMOS transistor 001aah633 22 50 D (%) Gp (dB) D 20 40 001aah634 -10 IMD (dBc) IMD3 -30 18 30 Gp IMD5 20 16 IMD7 -50 10 14 12 0 Fig 2. 100 0 300 200 -70 100 200 300 PL(PEP) (W) VDS = 32 V; IDq = 1600 mA; f1 = 2170 MHz; f2 = 2170.1 MHz. VDS = 32 V; IDq = 1600 mA; f1 = 2170 MHz; f2 = 2170.1 MHz. Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values 001aah635 21 Gp (dB) 20 D 19 35 D (%) 30 25 Fig 3. Two-tone intermodulation distortion as a function of peak envelope load power; typical values 001aah636 -20 ACPR (dBc) -30 20 18 Gp -40 17 15 16 10 15 5 14 0 10 20 30 40 50 0 60 70 PL(AV) (W) -50 -60 VDS = 32 V; IDq = 1600 mA; f1 = 2162.5 MHz; f2 = 2167.5 MHz; carrier spacing 5 MHz. Fig 4. 0 PL(PEP) (W) 2-carrier W-CDMA power gain and drain efficiency as functions of average load power; typical values 0 10 20 30 40 50 60 70 PL(AV) (W) VDS = 32 V; IDq = 1600 mA; f1 = 2162.5 MHz; f2 = 2167.5 MHz; carrier spacing 5 MHz. Fig 5. 2-carrier W-CDMA adjacent channel power ratio as function of average load power; typical values BLF6G22-180PN_22LS-180PN All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 -- 12 July 2013 (c) NXP B.V. 2013. All rights reserved. 5 of 14 BLF6G22(LS)-180PN NXP Semiconductors Power LDMOS transistor 001aah637 21 Gp (dB) 20 D 19 35 D (%) 30 25 18 15 16 10 15 5 14 20 30 40 -30 ACPR 50 0 60 70 PL(AV) (W) -50 -60 VDS = 32 V; IDq = 1600 mA; f1 = 2157.5 MHz; f2 = 2167.5 MHz; carrier spacing 10 MHz. Fig 6. IMD3 -40 17 10 ACPR, IMD3 (dBc) 20 Gp 0 001aah638 -20 2-carrier W-CDMA power gain and drain efficiency as functions of average load power; typical values 0 10 20 30 40 50 60 70 PL(AV) (W) VDS = 32 V; IDq = 1600 mA; f1 = 2157.5 MHz; f2 = 2167.5 MHz; carrier spacing 10 MHz. Fig 7. 2-carrier W-CDMA adjacent channel power ratio and third order intermodulation distortion as functions of average load power; typical values BLF6G22-180PN_22LS-180PN All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 -- 12 July 2013 (c) NXP B.V. 2013. All rights reserved. 6 of 14 BLF6G22(LS)-180PN NXP Semiconductors Power LDMOS transistor 8. Test information C2 C3 C4 C7 C8 C9 C10 C11 R2 input 50 C1 output 50 C12 R1 C13 R3 C14 C5 C15 C16 C6 001aah639 See Table 9 for list of components. Fig 8. Test circuit for operation at 2110 MHz and 2170 MHz BLF6G22-180PN_22LS-180PN All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 -- 12 July 2013 (c) NXP B.V. 2013. All rights reserved. 7 of 14 BLF6G22(LS)-180PN NXP Semiconductors Power LDMOS transistor C9 C8 C7 C2 C10 C11 C3 R2 C4 C1 C13 R1 C12 C6 INPUT R3 OUTPUT C14 C15 C5 C16 TB BLF6G22-180PN TB BLF6G22-180PN 001aah640 Striplines are on a double copper-clad Rogers R04350 Printed-Circuit Board (PCB) with r = 3.5 and thickness = 0.76 mm. See Table 9 for list of components. Fig 9. Component layout for 2110 MHz and 2170 MHz test circuit Table 9. List of components For test circuit, see Figure 8 and Figure 9. Component Description Value C1, C3, C5 ATC multilayer ceramic chip capacitor 10 pF C2, C8, C16 TDK multilayer ceramic chip capacitor 4.7 F C4, C6 TDK multilayer ceramic chip capacitor 220 nF C7, C14 ATC multilayer ceramic chip capacitor 10 pF Remarks [1] [2] C9 electrolytic capacitor 220 F; 63 V C10, C11, C15 Murata ceramic chip capacitor 100 nF C12 ATC multilayer ceramic chip capacitor 15 pF [2] C13 ATC multilayer ceramic chip capacitor 0.3 pF [1] R1 chip resistor 33 R2, R3 chip resistor 5.6 [1] American technical ceramics type 100B or capacitor of same quality. [2] American technical ceramics type 180R or capacitor of same quality. BLF6G22-180PN_22LS-180PN All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 -- 12 July 2013 (c) NXP B.V. 2013. All rights reserved. 8 of 14 BLF6G22(LS)-180PN NXP Semiconductors Power LDMOS transistor 9. Package outline Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A mm 4.7 4.2 inches b c D D1 e E E1 11.81 0.18 31.55 31.52 9.50 13.72 11.56 0.10 30.94 30.96 9.30 9.53 9.27 F H H1 L 1.75 17.12 25.53 3.48 1.50 16.10 25.27 2.97 p Q q 3.30 3.05 2.26 2.01 35.56 U1 U2 w1 41.28 10.29 0.25 41.02 10.03 w2 w3 0.51 0.25 0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089 0.185 0.465 0.007 1.242 1.241 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079 0.165 0.455 0.004 1.218 1.219 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 10-02-02 12-05-02 SOT539A Fig 10. Package outline SOT539A BLF6G22-180PN_22LS-180PN All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 -- 12 July 2013 (c) NXP B.V. 2013. All rights reserved. 9 of 14 BLF6G22(LS)-180PN NXP Semiconductors Power LDMOS transistor Earless flanged balanced ceramic package; 4 leads SOT539B D A F 5 D1 D U1 H1 w2 1 c D 2 E1 U2 H E L 3 4 w3 b Q e 0 5 10 mm scale Dimensions Unit(1) w2 w3 0.25 0.25 max 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.089 1.275 0.405 0.54 inches nom 0.01 min 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.079 1.265 0.395 0.01 mm max nom min A b E E1 4.7 11.81 0.18 31.55 31.52 c D D1 9.5 9.53 e 4.2 11.56 0.10 30.94 30.96 9.3 9.27 F H H1 L Q U1 U2 1.75 17.12 25.53 3.48 2.26 32.39 10.29 1.50 16.10 25.27 2.97 2.01 32.13 10.03 13.72 Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version References IEC JEDEC JEITA sot539b_po European projection Issue date 12-05-02 13-05-24 SOT539B Fig 11. Package outline SOT539B BLF6G22-180PN_22LS-180PN All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 -- 12 July 2013 (c) NXP B.V. 2013. All rights reserved. 10 of 14 BLF6G22(LS)-180PN NXP Semiconductors Power LDMOS transistor 10. Abbreviations Table 10. Abbreviations Acronym Description 3GPP 3rd Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel IMD InterModulation Distortion LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor PAR Peak-to-Average power Ratio PDPCH transmission Power of the Dedicated Physical CHannel RF Radio Frequency VSWR Voltage Standing-Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 11. Revision history Document ID Release date BLF6G22-180PN_22LS-180PN V.5 20130712 Product data sheet Modifications: BLF6G22-180PN_22LS-180PN_4 Modifications: BLF6G22-180PN_22LS-180PN_3 * * Data sheet status Change notice Supersedes - BLF6G22-180PN_22LS-180PN_4 The package outline Figure 11 is updated. Translation disclaimer added to the legal text. 20100304 Product data sheet - BLF6G22-180PN_22LS-180PN_3 * The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. * * Legal texts have been adapted to the new company name where appropriate. The status of this document has been changed to "Product data sheet". 20091211 Objective data sheet - BLF6G22-180PN_2 BLF6G22-180PN_2 20080423 Product data sheet - BLF6G22-180PN_1 BLF6G22-180PN_1 20080221 Preliminary data sheet - BLF6G22-180PN_22LS-180PN All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 -- 12 July 2013 - (c) NXP B.V. 2013. All rights reserved. 11 of 14 BLF6G22(LS)-180PN NXP Semiconductors Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft -- The document is a draft version only. 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Customer is responsible for doing all necessary testing for the customer's applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). NXP does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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All rights reserved. 12 of 14 BLF6G22(LS)-180PN NXP Semiconductors Power LDMOS transistor Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications. Non-automotive qualified products -- Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any Translations -- A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF6G22-180PN_22LS-180PN All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 -- 12 July 2013 (c) NXP B.V. 2013. All rights reserved. 13 of 14 NXP Semiconductors BLF6G22(LS)-180PN Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Ruggedness in class-AB operation . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2013. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 12 July 2013 Document identifier: BLF6G22-180PN_22LS-180PN