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MOC301XM, MOC302XM — 6-Pin DIP Random-Phase Triac Driver Output Optoco upler (250/400 Volt Peak)

MOC301XM, MOC302XM Rev. 1.5

July 2015

MOC3010M, MOC3011M, MOC3012M,

MOC3020M, MOC3021M, MOC3022M, MOC3023M

6-Pin DIP Random-Phase Triac Driver Output Optocoupler

(250/400 Volt Peak)

Features

• Excellent IFT Stability—IR Em it ting Diode Has Low

Degradation

• Peak Blocking V o ltage

– 250 V, MOC301XM

– 400 V, MOC302XM

• Safety and Regulatory Approvals

– UL1577, 4,170 VACRMS for 1 Minute

– DIN EN/IEC60747-5-5

Applications

• Industrial Controls

• Solenoid/Valve Controls

•Traffic Lights

• Static AC Power Switch

• Vending Machines

• Incandescent Lamp Dimmers

• Solid State Relay

• Motor Control

• Lamp Ballasts

Description

The MOC301XM and MOC302XM series are optically

isolated triac driver devices. These devices contain a

GaAs infrared emitting diode an d a light a ctivate d silicon

bilateral switch, which functions like a triac. They are

designed for interfacin g between electronic controls and

power triacs to control resistive and inductive loads for

115 VAC operations.

Schematic Package Outlines

Figure 1. Schematic Figure 2. Package Outlines

MAIN TERM.

NC*

N/C

*DO NOT CONNECT

(TRIAC SUBSTRATE)

ANODE

CATHODE

6MAIN TERM.

MOC301XM, MOC302XM Rev. 1.5 2

MOC301XM, MOC302XM — 6-Pin DIP Random-Phase Triac Driver Output Optoco upler (250/400 Volt Peak)

Safety and Insulation Ratings

As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only withi n the safety limit

data. Compliance with the safety ratings shall be ensured by means of protective circuits.

Parameter Characteristics

Installation Classifications per DIN VDE

0110/1.89 Table 1, For Rated Mains Voltage < 150 VRMS I–IV

< 300 VRMS I–IV

Climatic Classification 40/85/21

Pollution Degree (DIN VDE 0110/1.89) 2

Comparative Tracking Index 175

Symbol Parameter Value Unit

VPR

Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR,

Type and Sample Test wi th tm = 10 s, Partial Discharge < 5 pC 1275 Vpeak

Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR,

100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak

VIORM Maximum Working Insulation Voltage 850 Vpeak

VIOTM Highest Allowable Over-Voltage 6000 Vpeak

External Creepage ≥ 7mm

External Clearance ≥ 7mm

External Clearance (for Option TV, 0.4" Lead Spacing) ≥ 10 mm

DTI Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm

RIO Insulation Resistance at TS, VIO = 500 V > 109Ω

MOC301XM, MOC302XM Rev. 1.5 3

MOC301XM, MOC302XM — 6-Pin DIP Random-Phase Triac Driver Output Optoco upler (250/400 Volt Peak)

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exp osure to stresses above the reco mmended op erating conditions may affe ct device reliabil ity.

The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified.

Symbol Parameters Device Value Unit

TOTAL DEVICE

TSTG Storage Temperature All -40 to +150 °C

TOPR Operating Temperature All -40 to +85 °C

TJJunction Temperature Range All -40 to +100 °C

TSOL Lead Solder Temperature All 260 for

10 seconds °C

PDTotal Device Power Dissipation at 25°C Ambient All 330 mW

Derate Above 25°C 4.4 mW/°C

EMITTER

IFContinuous Forward Current All 60 mA

VRReverse Voltage All 3 V

PDTotal Power Dissipation at 25°C Ambient All 100 mW

Derate Above 25°C 1.33 mW/°C

DETECTOR

VDRM Off-State Output Terminal Voltage

MOC3010M

MOC3011M

MOC3012M 250

MOC3020M

MOC3021M

MOC3022M

MOC3023M

400

ITSM Peak Repetitive Surge Current

(PW = 100 μs, 120 pps) All 1 A

PDTotal Power Dissipation at 25°C Ambient All 300 mW

Derate Above 25°C 4 mW/°C

MOC301XM, MOC302XM Rev. 1.5 4

MOC301XM, MOC302XM — 6-Pin DIP Random-Phase Triac Driver Output Optoco upler (250/400 Volt Peak)

Electrical Characteristics

TA = 25°C unless otherwise specified.

Individual Component Characteristic s

Transfer Characteristics

Isolation Characteristics

Notes:

1. Test voltage must be applied within dv/dt rating.

2. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating

IF lies between max IFT (30 mA for MOC3020M, 15 mA for MOC3010M and MOC3021M, 10 mA for MOC3011M and

MOC3022M, 5 mA for MOC3012M and MOC3023M) and absolute maximum IF (60 mA).

3. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and

pins 4, 5 and 6 are common.

Symbol Parameters Test Conditions Device Min. Typ. Max. Unit

EMITTER

VFInput Forward Voltage IF = 10 mA All 1.15 1.50 V

IRReverse Leakage Current VR = 3 V, TA = 25°C All 0.01 100 μA

DETECTOR

IDRM Peak Blocking Current,

Either Direction Rated VDRM, IF = 0(1) All 10 100 nA

VTM Peak On-State Voltage,

Either Direction ITM = 100 mA peak, IF = 0 All 1.8 3.0 V

Symbol DC Characteristics Test Conditions Device Min. Typ. Max. Unit

IFT LED T rigger Current Voltage = 3 V(2)

MOC3020M 30

MOC3010M 15

MOC3021M

MOC3011M 10

MOC3022M

MOC3012M 5

MOC3023M

IHHolding Current, Eith er

Direction All 100 μA

Symbol Parameter Test Conditions Device Min. Typ. Max. Unit

VISO Isolation Voltage(3) t = 1 Minute All 4170 VACRMS

MOC301XM, MOC302XM Rev. 1.5 5

MOC301XM, MOC302XM — 6-Pin DIP Random-Phase Triac Driver Output Optoco upler (250/400 Volt Peak)

Typical Performance Curves

AMBIENT TEMPERATURE - TA (oC)

-40 -20 0 20 40 60 80 100

TRIGGER CURRENT (NORMALIZED)

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

- LED FORWARD CURRENT (mA)

1 10 100

- FORWARD VOLTAGE (V)

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

= -55

= 25

= 100

VTM - ON-STATE VOLTAGE (V)

-3 -2 -1 0 1 2 3

- ON-STATE CURRENT (mA)

-800

-600

-400

-200

200

400

600

800

- AMBIENT TEMPERATURE (

-40 -20 0 20 40 60 80 100

DRM

- LEAKAGE CURRENT (nA)

0.1

100

1000

10000

NORMALIZED TO TA = 25°C

Figure 3. LED Forward Voltage vs. Forward Current

Figure 5. Trigger Current vs. Ambient Temperature

in -

LED TRIGGER WIDTH (μs)

1 2 5 10 20 50 100

TRIGGER CURRENT (NORMALIZED)

NORMALIZED TO:

PWin ≥ 100 μs

Figure 6. LED Current Required to Trigger vs. LED Pulse Width

Figure 8. Leakage Current, I

DRM

vs. Temperature

Figure 4. On-State Characteristics

25 30 40 6050 70 80 90 100

STATIC dv/dt (V/μs)

STATIC dv/dt

CIRCUIT IN FIGURE 9

Figure 7. dv/dt vs. Temperature

MOC301XM, MOC302XM Rev. 1.5 6

MOC301XM, MOC302XM — 6-Pin DIP Random-Phase Triac Driver Output Optoco upler (250/400 Volt Peak)

Note:

This optoisolator should not be used to drive a load directly. It is intended to be a trigger device only.

Figure 9. Static dv/dt Test Circuit

Figure 10. Resistive Load

Figure 11. Inductive Load with Sensitive Gate Triac (IGT ≤ 15 mA)

Vdc

400 V (MOC302X)

250 V (MOC301X)

R = 10 kΩ

CTEST

X100

SCOPE

PROBE

PULSE

INPUT MERCURY

WETTED

RELAY

RTEST

DUT

252 V (MOC302X)

158 V (MOC301X)

0 VOLTS

APPLIED VOLTAGE

WAVEFORM

Vmax =

dv/dt = 0.63 Vmax = 252

RC RC

400 V (MOC302X)

= 250 V (MOC301X)

(MOC302X)

= 158

RC (MOC301X)

1. The mercury wetted relay provides a high speed

repeated pulse to the D.U.T.

2. 100x scope probes are used, to allow high speeds and

voltages.

3. The worst-case condition for static dv/dt is established

by triggering the DUT with a normal LED input current,

then removing the current. The variable RTEST allows

the dv/dt to be gradually increased until the DUT

continues to trigger in response to the applied voltage

pulse, even after the LED current has been removed.

The dv/dt is then decreased until the DUT stops

triggering. τRC is measured at this point and recorded.

VCC

Rin 1

120 V

60 Hz

180 Ω

MOC3010M

MOC3011M

MOC3012M

VCC

Rin 1

0.1 μF

180 Ω

2.4 kΩ

120 V

60 Hz

MOC3010M

MOC3011M

MOC3012M

MOC301XM, MOC302XM Rev. 1.5 7

MOC301XM, MOC302XM — 6-Pin DIP Random-Phase Triac Driver Output Optoco upler (250/400 Volt Peak)

Figure 12. Inductive Load with sensitive Gate Triac (IGT ≤ 15 mA)

Figure 13. Typical Application Circuit

Rin

VCC

0.2 μF

180 Ω

1.2 kΩ

120 V

60 Hz

MOC3010M

MOC3011M

MOC3012M

VCC

Rin 1

0.05 μF

0.01 μF

LOAD

360 Ω

470 Ω

240

VAC

HOT

GROUND

MOC3020M

MOC3021M

MOC3022M

MOC3023M

In this circuit the “hot” side of the line is switched and the load connected to the cold or ground side.

The 39 Ω resistor and 0.01 μF capacitor are for snubbing of the triac, and the 470 Ω resistor and 0.05 μF

capacitor are for snubbing the coupler. These components may or may not be necessary depending upon

the particular and load used.

MOC301XM, MOC302XM Rev. 1.5 8

MOC301XM, MOC302XM — 6-Pin DIP Random-Phase Triac Driver Output Optoco upler (250/400 Volt Peak)

Reflow Profile

Figure 14. Reflow Profile

300

280

260

240

220

200

180

160

140

120

100

°C

Time (s)

0 60 180120 270

260°C

>245°C = 42 s

Time Above

183°C = 90 s

360

1.822°C/s Ramp-up Rate

33 s

MOC301XM, MOC302XM Rev. 1.5 9

MOC301XM, MOC302XM — 6-Pin DIP Random-Phase Triac Driver Output Optoco upler (250/400 Volt Peak)

Ordering Information(4)

Note:

4. The product orderable part number system listed in this table also applies to the MOC3011M, MOC3012M,

MOC3020M, MOC3021M, MOC3022M, and MOC3023M product families.

Marking Information

Figure 15. Top Mark

Part Number Package Packing Method

MOC3010M DIP 6-Pin Tube (50 Units)

MOC3010SM SMT 6-Pin (Lead Bend) Tube (50 Units)

MOC3010SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units)

MOC3010VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units)

MOC3010SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units)

MOC3010SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units)

MOC3010TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units)

MOC3010

43 5

V X YY

Top Mark Definitions

1 Fairchild Logo

2 Device Number

3DIN EN/IEC60747-5-5 Option (only appears on component

ordered with this option)

4 One-Digit Year Code, e.g., ‘5’

5 Two-Digit Work Week, Ranging from ‘01’ to ‘53’

6 Assembly Package Code

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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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