ee , Soe Create a cer. SE. eas nS SSsss = CYPRESS SEMICONDUCTOR Reprogrammable 2K x 8 PROM _ ap wey Features Windowed for reprogrammability CMOS for optimum speed/power High speed 20 ns (commercial) 25 ns (military) Low power 660 mW (commercial and military) Low standby power 220 mW (commercial and military) EPROM technology 100% program- mable Slim 300-mil or standard 600-mil packaging available 5V +10% Vcc, commercial and military TTL-compatible /O CY7C291A CY7C292A/CY7C293A Direct replacement for bipolar PROMs @ Capable of withstanding >2001V stat- ic discharge Functional Description The CY7C291A, CY7C292A, and CY7C293A are high-performance 2K- word by 8-bit CMOS PROMS. They are functionally identical, but are packaged in 300-mil (7C291A, 7C293A) and 600-mil wide plastic and hermetic DIP packages (7C292A). The CY7C293A has an auto- matic power down feature which reduces the power consumption by over 70% when deselected. The 300-mil ceramic package may be equipped with an erasure window; when exposed to UV light the PROM is erased and can then be reprogrammed. The memory cells utilize proven EPROM floating-gate technology and byte-wide in- telligent programming algorithms. The CY7C291A, CY7C292A, and CY7C293A are plug-in replacements for bipolar devices and offer the advantages of lower power, reprogrammability, superior performance and programming yield. The EPROM cell requires only 12.5V for the supervoltage and low current require- ments allow for gang programming. The EPROM cells allow for each memory loca- tion to be tested 100%, as each location is written into, erased, and repeatedly exer- cised prior to encapsulation. Each PROM is also tested for AC performance to guar- antee that after customer programming the product will meet DC and AC specifi- cation limits. A read is accomplished by placing an ac- tive LOW signal on CS, and active HIGH signals on CS2 and CS3. The contents of the memory location addressed by the ad- dress line (Ag Ajo) will become avail- able on the output lines (Og O7). Logic Block Diagram PROGRAM- MABLE ARRAY ROW ADDRESS Pin Configurations DIP Top View LCC/PLCC (Opage Only) Top View Oo Window available on 7C291A and 7C293A only. C291A-1 Selection Guide 7C291A~25 7C291A35 7C291A50 7C292A25 7C292A35 7C292A50 7C293A ~25 70293A35 7C293A50 7C291A20 7C291AL25 7C291AL35 7C291AL50 7C292A20 7C29ZAL25 7C292AL35 7C292AL50 7C293A20 7C293AL25 7C293AL35 7C293AL50 Maximum Access Time (ns) 20 25 35 50 Maximum Operating Standard Commercial 120 90 90 90 Current (mA Military 120 90 90 L Commercial 60 60 60 Standby Current (mA) Commercial 40 30 30 30 7293A Only Military 40 40 40 3-166= CY7C291A 7 CY7C292A/CY7C293A SEMICONDUCTOR Maximum Ratings (Above which the useful life may be impaired. For user guidelines, Static Discharge Voltage ................-...004. >2001V not tested.) (per MIL-STD-883, Method 3015) Storage Temperature ...............5. ~ 65C to +150C Latch-Up Current ....... 6. cece cece >200 mA Ambient Temperature with 0 ing R: Power Applied ..........0.c0cceeeees ~ 55C to +125C perating Range Supply Voltage to Ground Potential....... 0.5V to +7.0V Ambient DC Voltage Applied to Outputs Range Temperature Vee i} in High Z State ......... 0... cee eee eee 0.5V to +7.0V Commercial 0C to + 70C 5V +10% DC Input Voltage .............. cee eee 3.0V to +7.0V Industrial!!} 40C to + 85C 5V +10% o DC Program Voltage ........00.. 000 cceese ceases 13.0V Afiitary@ Ss to 4 SC 3V 210% = UV Exposure .... 0... e cece ete eee eas 7258 Wsec/cm2 rd a Electrical Characteristics Over the Operating Rangel: 4] 7C291A20 | 7C291A25 | 7C291AL25 7C292A20 | 7C292A-25 | 7C292AL25 7C293A20 | 7C293A25 | 7C293AL25 Parameter Description Test Conditions Min. | Max. | Min. | Max. | Min. | Max. | Unit Vou Output HIGH Voltage Vcc = Min., low = 4.0mA | 2.4 2.4 2.4 Vv VoL Output LOW Voltage Vcc = Min., 0.4 0.4 0.4 Vv Tot = 16.0mA Vin Input HIGH Voltage Guaranteed Input Logical] 2.0 | Vcc | 2.0 | Vec | 2.0 | Vcc Vv HIGH Voltage for All Inputs VIL Input LOW Voltage Guaranteed Input Logical 0.8 0.8 0.8 Vv LOW Voltage for All Inputs lix Input Load Current GND < Vin < Vec - 10] +10 | 10 |} +10 | ~10 | +10 | pA Veo Input Diode Clamp Voltage Note 4 loz Output Leakage Current GND < Vour < Vco -10] +10 | 10 7 +10 | 10 | +10 | pA Output Disabled Tos Output Short Circuit Vcc = Max., Vout = GND 20 | -90 | ~20 | ~90 | 20 | -90 | mA Current! Icc Vcc Operating Supply Voc = Max, Com! 120 90 60 mA =OmA Current Iout = 0 Mi 120 Isp Standby Supply Current Voc = Max., Com! 40 30 30 mA TC I =V (7C293A Only) CS) 1H Mi 40 Vpp Programming Supply Voltage 12 13 12 13 12 13 Vv Ipp Programming Supply Current 50 50 50 mA Vinp Input HIGH Programming 3.0 3.0 3.0 Voltage ViLp Input LOW Programming 0.4 0.4 0.4 v Voltage Notes: 1. Contact a Cypress representative for industrial temperature range 4. See the Introduction to CMOS PROMs section of the Cypress Data specifications. Book for general information on testing. 2. Ty is the instant on case temperature. 5. For test purposes, not more than one output at a time should be 3. See the last page of this specification for Group A subgroup testing in- shorted. Short circuit test duration should not exceed 30 seconds. formation. 3-167asz CYPRESS Sees SEMICONDUCTOR CY7C291A CY7C292A/CY7C293A Electrical Characteristics Over the Operating Rangel}. 4] (continued) 7C291AL35, 50 | 7C291A35, 50 7C292AL35, 50 | 7C292A35, 50 7C293AL35, 50 | 7C293A35, 50 Parameter Description Test Conditions Min. Max. Min. Max. Unit Vou Output HIGH Voltage Vcc = Min., Ion = 4.0mA 2.4 2.4 Vv VoL Output LOW Voltage Vcc = Min., lol = 16.0 mA 0.4 0.4 Vv Vin Input HIGH Voltage Guaranteed Input Logical 2.0 2.0 Vv HIGH Voltage for All Inputs VIL Input LOW Voltage Guaranteed Input Logical 0.8 0.8 v LOW Voltage for All Inputs Ix Input Load Current GND < Vin < Vcc ~ 10 +10 - 10 +10 pA Vcep Input Diode Clamp Voltage Note 4 loz Output Leakage Current GND < Vour < Vcc 10 +10 - 10 +10 pA Output Disabled Ios Output Short Circuit Current] = [| Vec = Max., Vour = GND | 20 -90 } -20 | -90 mA Icc Vcc Operating Supply Current Vcc = Max., | Commercial 60 90 mA Vin = 2.0V Iour=0 mA_ | Military 90 Isp Standby Supply Current Vcc = Max, | Commercial 30 30 mA 7C293A Oni CS, = ( nly) CS. =Vin [Military 40 Vpp Programming Supply Voltage 12 13 12 13 Vv Ipp Programming Supply Current 50 50 mA Vinp Input HIGH Programming Voltage 3.0 3.0 Vv VILP Input LOW Programming Voltage 0.4 0.4 Vv Capacitancel4} Parameter Description Test Conditions Max. Unit Cin Input Capacitance Ta = 25C, f = 1 MHz, 10 pF Cout Output Capacitance Voc = 5.0V - 10 pF 3-168CY7C291A a CY7C292A/CY7C293A SEMICONDUCTOR AC Test Loads and Waveforms(1 R1 250Q R1 250Q 5V _w SV OUTPUT i OUTPUT i ALL INPUT PULSES 0 pF R2 F R2 30 P I 1672 5p I 1672 INCLUDING + a INCLUDING ial JIG AND ~ ~ JIG AND ~ 7 SCOPE SCOPE cagta-4 C2915 (a) Normal Load (b) High Z Load = Equivalent to: THEVENIN EQUIVALENT 100Q a OUTPUT ows0 2.0V C291A~6 , le tpp teu cc fT SUPPLY 50% 50% CURRENT | A Ag Ato | ADDRESS CS&p - CSg cs, re tan tuzcs > tacs Og - O7 c291A-7 Switching Characteristics Over the Operating Rangel? 4] TC291A25 TC291A35 7C291A50 7C292A~25 7C292A35 7C292A-50 71C293A25 7C293A35 7C293A50 7C291A20 | 7C291AL25 | 7C291AL35 | 7C291AL50 7C292A~20 | 7C292AL25 | 7C292AL~35 | 7C292AL50 7C293A-20 | 7C293AL25 | 7C293AL-35 | 7C293AL-50 Parameter Description Min. | Max. | Min. | Max. | Min. | Max. | Min. | Max. | Unit taa Address to Output Valid 20 25 35 50 ns tyzcs1 Chip Select Inactive to High Z 15 15 20 20 ns tacsi Chip Select Active to Output Valid 15 15 20 20 ns tyzcs2 Chip Select Inactive to High Z 22 27 35 45 ns (7293A CS; Only)I6 tacs2 Chip Select Active to Output Valid 22 27 35 45 ns (7293A CS; Only)l4 tpu Chip Select Active to Power-Up] 0 0 0 0 ns (7C293A CS; Only) tpp Chip Select_Inactive to Power-Down 22 27 35 45 ns (7C293A CS, Only) Notes: __ 6. tyzcs2 and tacs2 refer to 7C293A CS; only. 3-169F CYPRESS 8 SEMICONDUCTOR CY7C291A CY7C292A/CY7C293A Erasure Characteristics Wavelengths of light less than 4000 Angstroms begin to erase these PROMs. For this reason, an opaque label should be placed over the window if the PROM is exposed to sunlight or fluorescent light- ing for extended periods of time. The recommended dose of ultraviolet light for erasure is a wave- length of 2537 Angstroms for a minimum dose (UV intensity x ex- posure time) of 25 Wsec/cm2. For an ultraviolet lamp with a 12 mW/cm2 power rating, the exposure time would be approximately 35 minutes. These PROMS need to be within 1 inch of the lamp during erasure. Permanent damage may result if the PROM is exposed to high-in- tensity UV light for an extended period of time. 7258 Wsec/cm? is the recommended maximum dosage. Programming Information Programming support is available from Cypress as well as from a number of third-party software vendors. For detailed program- ming information, including a listing of software packages, please see the PROM Programming Information located at the end of this section. Programming algorithms can be obtained from any Cy- press representative. Table 1, Mode Selection - Pin Functionl] Read or Output Disable A1o Ao CS; CS CS, O7 - Oo Mode Other Aao Ao PGM VFY Vpp D7 - Do Read Ajo Ao Vin Vin Vit O07 Oo Output Disablel] Ayo Ag x x Vin High Z Output Disable Aigo Ag x VIL x High Z Output Disable Ajo Ao VIL x x High Z Program Aio Ao ViLp Vine Vpp D7 - Do Program Verify A1o Ao VInp ViLp Vpp O7 Oo Program Inhibit Ayo Ag Vinp VInp Vpp High Z Intelligent Program Ajo Ao ViLp Vine Vpp D7 - Do Blank Check Zeros Ao ~ Ag Vine VILP Vpp Zeros Notes: 7. X= dont care but not to exceed Voc +5%. DIP Top View a7: 24D Veo Aso 2370 Ag 453 221] Ag wf 7084 21 ao As Y 5 702934 Vep A206 VFY Ai7 PGM Aas Dy Doo De 2 G10 Ds DO Da GND [J 12 D3 c291A-8 8. The power-down mode for the CY7C293<A is activated by deselecting CS). LCC/PLCC.(Opage Only) Top View Lo ro 8 a P2zS 4 3 2,1, 282726 ~ 25 7Ceg1A 24 23 C291A-9 Figure 1. Programming Pinouts 3~170S== CY7C291A CY7C292A/CY7C293A =) CYPRESS # SEMICONDUCTOR Typical DC and AC Characteristics NORMALIZED SUPPLY CURRENT vs. SUPPLY VOLTAGE NORMALIZED SUPPLY CURRENT vs. AMBIENT TEMPERATURE NORMALIZED ACCESS TIME ys. SUPPLY VOLTAGE 1.6 1.2 1.2 ud A = - Q 14 = rm 3 WA gis 2 1.0 f a a wi P- N12 N 8 we z a 1.0 = og w S < a = a 1.0 = wo 5 x N o z A g 0.9 z ec 08 y Ta = 25C = . N28 - L f = fax 5 Ta = 25C 0.6 | 0.8 0.4 | 4.0 4.5 5.0 55 60 55 25 125 4.0 45 5.0 5.5 6.0 SUPPLY VOLTAGE (V) AMBIENT TEMPERATURE (C) SUPPLY VOLTAGE (V) C291A-10 NORMALIZED ACCESS TIME OUTPUT SOURCE CURRENT TYPICAL ACCESS TIME CHANGE vs. TEMPERATURE vs. VOLTAGE vs. OUTPUT LOADING 16 < w E 2 5 @ 14 Gi o = oC us 5 3 12 6 a < oc N 1.0 a a z a a Fe 0.8 5 Voc = 4.5V is) & Ta = 25C 2 5 0.6 Oo 0 ~ 55 25 125 0 1.0 2.0 3.0 4.0 0 200 400 600 800 1000 AMBIENT TEMPERATURE (C) OUTPUT VOLTAGE (V) CAPACITANCE (pF) OUTPUT SINK CURRENT vs. OUTPUT VOLTAGE Icc vs. CYCLE PERIOD < 175 1.02 5 150 1.00 W125 Q Voc = 5.5V 2 0:98 Ta = 25C z 100 a 0.96 x N z 75 =z 0.94 2 Voc = 5.0V 2 2 50 Ta = 25C Q 0.92 a 2 2 25 0.90 0.88 0 0.0 1.0 2.0 3.0 OUTPUT VOLTAGE (Vv) 4.0 25 CYCLE PERIOD (ns) 50 75 100 C2g1A~-11 3-171a. CY7C291A = ee CY7C292A/CY7C293A 2 SEMICONDUCTOR Ordering Information"! Speed | Icc Package Operating (ns) | (mA) Ordering Code Name Package Type Range 20 120 | CY7C291A20JC J64 28-Lead Plastic Leaded Chip Carrier Commercial CY7C291A20PC P13 | 24-Lead (300-Mil) Molded DIP CY7C291A20SC $13 | 24-Lead Molded SOIC CY7C291A20WC W14 = | 24-Lead (300-Mil) Windowed CerDIP 25 60 | CY7C291AL~253C J64 | 28-Lead Plastic Leaded Chip Carrier Commercial CY7C291AL25PC P13 | 24-Lead (300-Mil) Molded DIP CY7C291AL25WC | W14 | 24-Lead (300-Mil) Windowed CerDIP 90 | CY7C291A25JC J64 | 28-Lead Plastic Leaded Chip Carrier CY7C291A25PC P13 | 24-Lead (300-Mil) Molded DIP CY7C291A~25SC $13 | 24-Lead Molded SOIC CY7C291A25WC W14 = | 24-Lead (300-Mil) Windowed CerDIP 120 | CY7C291A25DMB | D14 | 24-Lead (300-Mil) CerDIP Military CY7C291A-25LMB L64 | 28-Square Leadless Chip Carrier CY7C291A25QMB | Q64_ | 28-Pin Windowed Leadless Chip Carrier CY7C291A25TMB T73 | 24-Lead Windowed Cerpack CY7C291A25WMB | W14_ | 24-Lead (300-Mil) Windowed CerDIP 30 120 | CY7C291A30DMB | Di4_ | 24-Lead (300-Mil) CerDIP Military CY7C291A~-30LMB L64 | 28-Square Leadless Chip Carrier CY7C291430QMB | Q64__| 28-Pin Windowed Leadless Chip Carrier CY7C291A30TMB T73 | 24-Lead Windowed Cerpack CY7C291A-30WMB | W14 | 24-Lead (300-Mil) Windowed CerDIP 35 60 | CY7C291AL35JC J64 | 28-Lead Plastic Leaded Chip Carrier Commercial CY7C291AL35PC P13 | 24-Lead (300-Mil) Molded DIP CY7C291AL35WC | W14 | 24-Lead (300-Mil) Windowed CerDIP 90 | CY7C291A-35SC $13 | 24-Lead Molded SOIC Commercial CY7C291A35PC P13 | 24-Lead (300-Mil) Molded DIP CY7C291A~35WC W14 = | 24-Lead (300-Mil) Windowed CerDIP 120 | CY7C291A-35DMB | D14__ | 24-Lead (300-Mil) CerDIP Military CY7C291A-35LMB L64 =| 28-Square Leadless Chip Carrier CY7C291A-35QMB | Q64 _ | 28-Pin Windowed Leadless Chip Carrier CY7C291A~35TMB 173 | 24-Lead Windowed Cerpack CY7C291A-35WMB | W14_ | 24-Lead (300-Mil) Windowed CerDIP 50 60 | CY7C291AL503C J64 | 28-Lead Plastic Leaded Chip Carrier Commercial CY7C291AL50PC P13 | 24-Lead (300-Mil) Molded DIP CY7C291ALSOWC | W14 | 24-Lead (300-Mil) Windowed CerDIP 90 | CY7C291A-50SC $13 | 24-Lead Molded SOIC Commercial CY7C291A50PC P13 | 24-Lead (300-Mil) Molded DIP CY7C291A-50WC W14 = | 24-Lead (300-Mil) Windowed CerDIP 90 | CY7C291ASODMB | D14 | 24-Lead (300-Mil) CerDIP Military CY7C291AS0LMB L64 | 28-Square Leadless Chip Carrier CY7C291A50QMB Q64 | 28-Pin Windowed Leadless Chip Carrier CY7C291A~50TMB T73 | 24-Lead Windowed Cerpack CY7C291A~SOWMB | W14__| 24-Lead (300-Mil) Windowed CerDIP Note: 9. Most of these products are available in industrial temperature range. Contact a Cypress representative for specifications and product avail- ability. 3-172CY7C291A os Z CY7C292A/CY7C293A = = SEMCONDUCT OR Ordering Information!! (continued) Speed | Icc Package Operating (ns) | (mA) Ordering Code Name Package Type Range 20 120 | CY7C292A20DC D12 | 24-Lead (600-Mil) CerDIP Commercial CY7C292A20PC P11 =| 24-Lead (600-Mil) Molded DIP 25 120 | CY7C292A25DC D12 | 24-Lead (600-Mil) CerDIP Commercial CY7C292A25PC Pll =| 24-Lead (600-Mil) Molded DIP CY7C292A25DMB | D12_ } 24-Lead (600-Mil) CerDIP Military 30 120 | CY7C292A-30DMB |- D12_ | 24-Lead (600-Mil) CerDIP Military 35 60 | CY7C292AL35PC P11 | 24-Lead (600-Mil) Molded DIP Commercial 90 | CY7C292A~35DC D12_ | 24-Lead (600-Mil) CerDIP Commercial CY7C292A35PC Pil | 24-Lead (600-Mil) Molded DIP 120 | CY7C292A35DMB | D12_ | 24-Lead (600-Mil) CerDIP Military 50 60 | CY7C292ALS0PC P11 =| 24-Lead (600-Mil) Molded DIP Commercial 90 | CY7C292AS50DC D12 | 24-Lead (600-Mil) CerDIP Commercial CY7C292AS0PC Pll = | 24-Lead (600-Mil) Molded DIP 120 | CY7C292ASODMB | D12_ | 24-Lead (600-Mil) CerDIP Military Speed | Icc Package Operating (ns) | (mA) Ordering Code Name Package Type Range 20 120 | CY7C293A20PC P13 | 24-Lead (300-Mil) Molded DIP Commercial CY7C293A20WC W14 = | 24-Lead (300-Mil) Windowed CerDIP 25 120 | CY7C293A25PC P13 | 24-Lead (300-Mil) Molded DIP Commercial CY7C293A 25WC W14 =| 24-Lead (300-Mil) Windowed CerDIP CY7C293A25DMB | Di4_ | 24-Lead (300-Mil) CerDIP Military CY7C293A25LMB L64 =| 28-Square Leadless Chip Carrier CY7C293A25QMB | Q64_ | 28-Pin Windowed Leadless Chip Carrier CY7C293A25WMB |] W14_ | 24-Lead (300-Mil) Windowed CerDIP 30 120 | CY7C293A30DMB | D14_ | 24-Lead (300-Mil) CerDIP Military CY7C293A-30LMB L64 =| 28-Square Leadless Chip Carrier CY7C293A-30QMB | Q64 _ | 28-Pin Windowed Leadless Chip Carrier CY7C293A~30WMB | W14_ | 24-Lead (300-Mil) Windowed CerDIP 35 60 | CY7C293AL35PC P13 | 24-Lead (300-Mil) Molded DIP Commercial CY7C293AL35WC | W14_ | 24-Lead (300-Mil) Windowed CerDIP 90 | CY7C293A-35PC P13 =| 24-Lead (300-Mil) Molded DIP Commercial CY7C293A35WC W114 | 24-Lead (300-Mil) Windowed CerDIP 90 | CY7C293A35DMB | D14_ | 24-Lead (300-Mil) CerDIP Military CY7C293A35LMB L64 =| 28-Square Leadless Chip Carrier CY7C293A35QMB | Q64_ | 28-Pin Windowed Leadless Chip Carrier CY7C293A35WMB | W14_ | 24-Lead (300-Mil) Windowed CerDIP 50 60 | CY7C293AL50PC P13 | 24-Lead (300-Mil) Molded DIP Commercial CY7C293AL50WC | Wi14 | 24-Lead (300-Mil) Windowed CerDIP 90 | CY7C293A50PC P13 | 24-Lead (300-Mil) Molded DIP Commercial CY7C293AS0WC W114 = | 24-Lead (300-Mil) Windowed CerDIP 90 | CY7C293A-SODMB | D14_ | 24-Lead (300-Mil) CerDIP Military CY7C293A50LMB L64 =| 28-Square Leadless Chip Carrier CY7C293A50QMB | Q64_ | 28-Pin Windowed Leadless Chip Carrier CY7C293ASOWMB | W14_ | 24-Lead (300-Mil) Windowed CerDIP 3-173CY7C291A = gC ppess CY7C292A/CY7C293A SEMICONDUCTOR MILITARY SPECIFICATIONS SMD Cross Reference Group A Subgroup Testing SMD Cypress wo. Number Suffix Number DC Characteristics 5962-87650 OIKX | CY7@29150TMB Parameter Subgroups 5962-87650 OILX | CY7C29150WMB Vou 1, 2,3 5962-87650 013X | CY7C291-50QMB VoL 1, 2,3 5962-87650 03KX | CY7020135TMB Vin 1, 2,3 5962-87650 03LX_| CY7C29135WMB Vib 12,3 5962-87650 033X | CY7C201-35QMB Tx 12,3 5962-88680 OILX | CY7C293A50WMB lor 123 5962-88680 O1KX | CY7C293A50TMB Toc 123 5962-88680 013x | CY7C293A500MB Teal 123 5962-88680 02LX | CY7C293A35WMB 5962-88680 02KX_ | CY7C293A35TMB Switching Characteristics 5962-88680 023X | CY7C293A35QMB 5962-88680 03LX | CY7C293A30WMB Parameter Subgroups 5962-88680 03KX | CY7C293A -30TMB TAA 7, 8,9, 10, 11 5962-88680 033X | CY7C293A300MB tacsi! 7, 8, 9, 10, 11 596288680 04LX__ | CY7C293A25WMB tacsz1] 7, 8, 9, 10, 11 5962-88680 04KX | CY7C293A25TMB Notes 596288680 043K | CY7C293A250MB 10. 71C293A only. 5962-88734 O2Ix | CY7C292A45DMB 11. 7C291A and 7C292A only. 5962-88734 02KX | CY7C291A45KMB Document #: 38-00075-G 5962-88734 02LX | CY7C291A45DMB 5962-88734 023X | CY7C291A45LMB 5962-88734 035X | CY7C292A 35DMB 5962-88734 03KX | CY7C291A35KMB 596288734 03LX_ | CY7C291A35DMB 5962-88734 033X | CY7C291A35LMB 5962-88734 040x | CY7C292A25DMB 5962-88734 04KX | CY7C291A25KMB 5962-88734 04LX__| CY7C291A25DMB 5962-88734 043X__| CY7C291A25LMB 3-174