PolarTM Power MOSFET IXTA1N120P IXTP1N120P VDSS ID25 RDS(on) = 1200V = 1A 20 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 1200 V VDGR TJ = 25C to 150C, RGS = 1M 1200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 1.0 A IDM TC = 25C, pulse width limited by TJM 1.8 A IA EAS TC = 25C TC = 25C 1 100 A mJ dV/dt IS IDM, VDD VDSS, TJ 150C 10 V/ns PD TC = 25C 63 W -55 ... +150 150 -55 ... +150 C C C TJ TJM Tstg TL 1.6mm (0.062) from case for 10s 300 C TSOLD Plastic body for 10s 260 C Md Mounting torque 1.13 / 10 Nm/lb.in. Weight TO-263 TO-220 2.50 3.00 g g (TO-220) G S (TAB) TO-220 (IXTP) G (TAB) D S G = Gate S = Source D = Drain TAB = Drain Features z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 1200 VGS(th) VDS = VGS, ID = 50A 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) V 4.5 5 A 200 A TJ = 125C VGS = 10V, ID = 0.5 * ID25, Note 1 15.5 20 Applications: z V 50 nA Easy to mount Space savings High power density z z z z High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters DS99870A (04/08) (c) 2008 IXYS CORPORATION, All rights reserved http://store.iiic.cc/ IXTA1N120P IXTP1N120P Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs VDS= 30V, ID = 0.5 * ID25, Note 1 0.55 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz 0.92 S 445 25 5.4 pF pF pF Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 30 (External) 20 28 54 27 ns ns ns ns Qg(on) Qgs Qgd VGS= 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 17.6 3.5 10.6 nC nC nC RthJC RthCS (TO-220) 0.50 2.0 C/W C/W td(on) tr td(off) tf Source-Drain Diode TO-220 (IXTP) Outline Pins: 1 - Gate 2 - Drain Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V 1.0 A ISM Repetitive, pulse width limited by TJM 3.0 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 1.0A, -di/dt = 100A/s, VR = 100V, VGS = 0V 900 ns 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Note 1: Pulse test, t 300s; duty cycle, d 2%. TO-263 (IXTA) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 http://store.iiic.cc/ 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA1N120P IXTP1N120P Fig. 1. Output Characteristics @ 25C Fig. 2. Output Characteristics @ 125C 1.4 1.0 VGS = 10V 7V 1.2 VGS = 10V 6V 0.9 0.8 0.7 6V ID - Amperes ID - Amperes 1.0 0.8 0.6 0.6 0.5 5V 0.4 0.3 0.4 0.2 5V 0.2 0.1 0.0 0.0 0 3 6 9 12 15 18 21 24 27 0 30 5 10 15 VDS - Volts 20 25 Fig. 3. RDS(on) Normalized to ID = 0.5A Value vs. Junction Temperature 35 40 Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs. Drain Current 2.8 2.4 VGS = 10V 2.6 VGS = 10V 2.2 TJ = 125C 2.4 2.2 RDS(on) - Normalized RDS(on) - Normalized 30 VDS - Volts 2.0 I D = 1A 1.8 1.6 I D = 0.5A 1.4 1.2 1.0 2.0 1.8 1.6 1.4 1.2 0.8 TJ = 25C 1.0 0.6 0.4 0.8 -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID - Amperes TJ - Degrees Centigrade Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 1.1 0.8 1.0 0.7 0.9 0.6 ID - Amperes ID - Amperes 0.8 0.7 0.6 0.5 0.5 TJ = 125C 25C - 40C 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0.1 0 0.0 -50 -25 0 25 50 75 100 125 150 3.0 3.5 4.0 4.5 VGS - Volts TC - Degrees Centigrade (c) 2008 IXYS CORPORATION, All rights reserved http://store.iiic.cc/ 5.0 5.5 6.0 IXTA1N120P IXTP1N120P Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 1.6 2.8 1.4 2.4 2.0 1.0 IS - Amperes g f s - Siemens 1.2 TJ = - 40C 25C 125C 0.8 0.6 1.6 TJ = 125C 1.2 TJ = 25C 0.8 0.4 0.4 0.2 0.0 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.3 1.0 0.4 0.5 ID - Amperes 0.7 0.8 0.9 1.0 1.1 1.2 VSD - Volts Fig. 10. Capacitance Fig. 9. Gate Charge 1,000 10 VDS = 600V 9 Capacitance - PicoFarads I D = 500mA 8 I G = 10mA 7 VGS - Volts 0.6 6 5 4 3 Ciss 100 Coss 10 2 Crss f = 1 MHz 1 1 0 0 2 4 6 8 10 12 14 16 0 18 5 10 15 20 25 30 35 40 VDS - Volts QG - NanoCoulombs Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - C / W 10.0 1.0 0.1 0.0 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_1N120P(2A-245) 04-01-08-A http://store.iiic.cc/