BAL99 BAR99 SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODES BAL99 BAR99 ISSUE 2 - JUNE 1995 PIN CONFIGURATIONS 1 1 PARTMARKING DETAILS BAL99 - E2 BAR99 - E3 2 BAL99 2 1 3 3 BAR99 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Continuous Reverse Voltage VR VALUE UNIT 70 V Repetitive Peak Reverse Voltage VRRM 70 V Average Rectified Forward Current ( over any 20mS Period) IF(AV) 100 mA Repetitive Peak Forward Current IFRM 200 mA Power Dissipation at Tamb=25C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 C CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL Forward Voltage MAX. UNIT CONDITIONS. VF 715 855 1.1 1.3 mV mV V V IF=1mA IF=10mA IF=50mA IF=100mA Reverse Current IR 30 2.5 50 A A A VR=25V, Tj=150C VR=70V VR=70V, Tj=150C Diode Capacitance Cd 1.5 pF f=1MHz Forward Recovery Voltage Vfr 1.75 V Switched to IF=10mA, tr=20ns 6 ns Switched from IF=10mA, VR=1V RL=100 , IR=1mA Reverse Recovery Time trr MIN. Spice parameter data is available upon request for this device For switching circuit information refer to BAV99 datasheet.