AQY410EHJ - PANASONIC - Datasheet.Company

–1– ASCTB128E 201404-T

TYPES

*Indicate the peak AC and DC values.

Note: For space reasons, the initial letters of the part number “AQY”, the surface mount terminal shape indicator “A” and the packing style indicator “X” or “Z” are not marked

on the device. (Ex. the label for product number AQY412EHAX is 412EH.)

RATING

1. Absolute maximum ratings (Ambient temperature: 25°C 77°F)

Normally closed type

with reinforced insulation GE 1 Form B

(AQY41❍EH)

Type I/O isolation

voltage

Output rating*

Package

Part No.

Packing quantity

Through hole

terminal Surface-mount terminal

Load

voltage

Load

current Tube packing style

Tape and reel packing style

Tube Tape and reel

Picked from the

1/2-pin side

Picked from the

3/4-pin side

AC/DC

dual use

Reinforced

5,000 V

60 V 550 mA

DIP4-pin

AQY412EH AQY412EHA AQY412EHAX AQY412EHAZ 1 tube contains:

100 pcs.

1 batch contains:

1,000 pcs.

1,000 pcs.350 V 130 mA AQY410EH AQY410EHA AQY410EHAX AQY410EHAZ

400 V 120 mA AQY414EH AQY414EHA AQY414EHAX AQY414EHAZ

Item Symbol AQY412EH(A) AQY410EH(A) AQY414EH(A) Remarks

Input

LED forward current IF50 mA

LED reverse voltage VR5 V

Peak forward current IFP 1 A f = 100 Hz, Duty factor = 0.1%

Power dissipation Pin 75 mW

Output

Load voltage (peak AC) VL60 V 350 V 400 V

Continuous load current IL0.55 A 0.13 A 0.12 A Peak AC, DC

Peak load current Ipeak 1.5 A 0.4 A 0.3 A 100 ms (1 shot), VL= DC

Power dissipation Pout 500 mW

Total power dissipation PT550 mW

I/O isolation voltage Viso 5,000 V AC

Temperature

limits

Operating Topr –40°C to +85°C –40°F to +185°FNon-condensing at low temperatures

Storage Tstg –40°C to +100°C –40°F to +212°F

(AQY412EH)

(AQY410EH, 414EH)

VDE

mm inch

FEATURES

1. 1 Form B output type

2. Low on-resistance

This has been realized thanks to the

built-in MOSFET processed by our

proprietary method, DSD (Double-

diffused and Selective Doping) method.

3. Reinforced insulation of 5,000 V

More than 0.4 mm internal insulation

distance between inputs and outputs.

Conforms to EN41003, EN60950

(reinforced insulation).

4. Controls low-level analog signals

PhotoMOS feature extremely low closed-

circuit offset voltage to enable control of

low-level analog signals without

distortion.

5. High sensitivity and low on-

resistance

Can control max. 0.55 A load current with

5 mA input current.

Low on-resistance of typ.1Ω

(AQY412EH).

6. Low-level off-state leakage current

TYPICAL APPLICATIONS

• Power supply

• Measuring equipment

• Security equipment

• Modem

• Telephone equipment

• Electricity, plant equipment

• Sensing equipment

3.2

6.4

4.78

2.9

6.4

4.78

.126

.252

.188

.114

.252

.188

RoHS compliant

;;

;

;;

;

;;

;

Source electrode

N–

N+

N+N+

P+N+N+

P+

Gate electrode

Passivation membrane

Cross section of the normally-closed type of

power MOS

Intermediate

insulating

membrane

Gate

oxidation

membrane

Drain

electrode

GE 1 Form B (AQY41❍EH)

–2– ASCTB128E 201404-T

2. Electrical characteristics (Ambient temperature: 25°C 77°F)

*Operate/Reverse time

RECOMMENDED OPERATING CONDITIONS

Please obey the following conditions to ensure proper device operation and resetting.

■ These products are not designed for automotive use.

If you are considering to use these products for automotive applications, please contact your local Panasonic Corporation

technical representative.

REFERENCE DATA

Item Symbol AQY412EH(A) AQY410EH(A) AQY414EH(A) Condition

Input

LED operate (OFF) current Typical IFoff

1.4 mA IL=Max.

Maximum 3.0 mA

LED reverse (ON) current Minimum IFon

0.4 mA IL=Max.

Typical 1.3 mA

LED dropout

voltage

Typical VF

1.25 (1.14 V at IF = 5 mA) IF = 50 mA

Maximum 1.5 V

Output

On resistance Typical Ron

1Ω18Ω26ΩIF = 0 mA

IL = Max.

Within 1 s on time

Maximum 2.5Ω25Ω35Ω

Off state leakage current Maximum ILeak 10μAIF = 5 mA

VL = Max.

Transfer

characteristics

Operate (OFF) time* Typical Toff

3.0 ms 1.0 ms 0.8 ms IF = 0 mA ➝ 5 mA

IL = Max.

Maximum 10.0 ms 3.0 ms

Reverse (ON) time* Typical Ton

0.2 ms 0.3 ms 0.2 ms IF = 5 mA ➝ 0 mA

IL = Max.

Maximum 1.0 ms

I/O capacitance Typical Ciso

0.8 pF f =1MHz

VB = 0 V

Maximum 1.5 pF

Initial I/O isolation resistance Minimum Riso 1,000MΩ500 V DC

Item Symbol Recommended value Unit

Input LED current IF5 to 10 mA

Toff

Input

Output 10%

90%

Ton

1-(1). Load current vs. ambient temperature

characteristics

Allowable ambient temperature: –40°C to +85°C

–40°F to +185°F

1-(2). Load current vs. ambient temperature

characteristics

Allowable ambient temperature: –40°C to +85°C

–40°F to +185°F

2. On resistance vs. ambient temperature

characteristics

Measured portion: between terminals 3 and 4;

LED current: 0 mA; Load voltage: Max.(DC);

Continuous load current: Max. (DC)

200

150

100

0204060–20

80 85

100–40

AQY410EH

AQY414EH

Ambient temperature, °C

Load current, mA

200

300

400

500

600

700

100

Ambient temperature, °C

0204060

8085

100-40 -20

AQY412EH

On resistance, Ω

-40 -20

0204060

8085

Ambient temperature, °C

AQY410EH

AQY414EH

AQY412EH

GE 1 Form B (AQY41❍EH)

–3– ASCTB128E 201404-T

3. Operate (OFF) time vs. ambient temperature

characteristics

LED current: 5 mA; Load voltage: Max. (DC);

Continuous load current: Max. (DC)

4. Reverse (ON) time vs. ambient temperature

characteristics

LED current: 5 mA; Load voltage: Max. (DC);

Continuous load current: Max. (DC)

5. LED operate (OFF) current vs. ambient

temperature characteristics

Sample: All types;

Load voltage: Max. (DC);

Continuous load current: Max. (DC)

Operate (OFF) time, ms

-40 -20

0204060

80 85

Ambient temperature, °C

AQY410EH

AQY414EH

AQY412EH

Reverse (ON) time, ms

0.2

0.4

0.6

-40 -20

0.8

0204060

80 85

Ambient temperature, °C

AQY410EH

AQY414EH

AQY412EH(A)

Ambient temperature, °C

LED operate (OFF) current, mA

–40 –20

0204060

80 85

6. LED reverse (ON) current vs. ambient

temperature characteristics

Sample: All types;

Load voltage: Max. (DC);

Continuous load current: Max. (DC)

7. LED dropout voltage vs. ambient

temperature characteristics

LED current: 5 to 50 mA

8-(1). Current vs. voltage characteristics of out-

put at MOS portion

Measured portion: between terminals 3 and 4;

Ambient temperature: 25°C 77°F

Ambient temperature, °C

LED reverse (ON) current, mA

–40 –20

0204060

80 85

Ambient temperature, °C

LED dropout voltage, V

0–40 –20 20 40 60

80 85

1.5

1.4

1.3

1.2

1.1

1.0

50mA

30mA

20mA

10mA

5mA

140

120

100

–3 –2 –1–2.5 –1.5 –0.5

1.5 2.5123

–20

–40

–60

–80

–100

–120

–140

AQY410EH

AQY414EH

0.5

Voltage, V

Current, mA

8-(2). Current vs. voltage characteristics of out-

put at MOS portion

Measured portion: between terminals 3 and 4;

Ambient temperature: 25°C 77°F

9. Off state leakage current vs. load voltage

characteristics

Measured portion: between terminals 3 and 4;

Ambient temperature: 25°C 77°F

10. Operate (OFF) time vs. LED forward

current characteristics

Measured portion: between terminals 3 and 4;

Load voltage: Max. (DC); Continuous load current:

Max. (DC); Ambient temperature: 25°C 77°F

0.2

0.4

0.6

-0.2

-0.4

-0.6

-1 -0.5

0.5

Voltage, V

AQY412EH

Current, A

Off state leakage current, A

2006040 80 100

Load voltage, V

10–3

10–6

10–9

10–12

AQY410EH

AQY412EH

AQY414EH

Operate (OFF) time, ms

100 2030405060

LED forward current, mA

AQY410EH,AQY414EH

AQY412EH

11. Reverse (ON) time vs. LED forward current

characteristics

Measured portion: between terminals 3 and 4;

Load voltage: Max. (DC); Continuous load current:

Max. (DC); Ambient temperature: 25°C 77°F

12. Output capacitance vs. applied voltage

characteristics

Measured portion: between terminals 3 and 4;

Frequency: 1 MHz; Ambient temperature: 25°C 77°F

Reverse (ON) time, ms

LED forward current, mA

10 20 30 40 50 601002030405060

0.5

0.4

0.3

0.2

0.1

AQY410EH

AQY412EH,AQY414EH

Output capacitance, pF

500

400

300

200

100

Applied voltage, V

10 20 30 40 60

AQY410EH,AQY414EH

AQY412EH